232 results about "Film plane" patented technology

A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.

An imaging element having a photoelectric conversion film which has a laminated structure comprising a p-type semiconductor layer and an n-type semiconductor layer between a pair of electrodes, wherein at least one of the p-type semiconductor and the n-type semiconductor contains an organic compound with controlled orientation; a photoelectric conversion film having at least one organic dye compound, wherein the organic dye compound forms a J aggregate, or the angle between the spectral absorption transition dipolar moment of the organic dye compound and the photoelectric conversion film plane is 40° or less, a photoelectric conversion element and an imaging element; and a method of applying an electric field thereto, and an imaging element which comprises a photoelectric conversion film (a photosensitive layer) having a bulk heterojunction layer as an intermediate layer, or a photoelectric conversion film having two or more repeating structure units of a pn junction layer comprising a p-type semiconductor layer and an n-type semiconductor layer between a pair of electrodes.

Provided are a CCP (current confined path)-CPP (current-perpendicular-to-plane) type giant magneto-resistance (GMR) element having a giant magneto-resistance ratio in a low resistance region (a region of not more than 1 ohm per square micrometer) and a magnetic sensor using this GMR element. The CCP-CPP type GMR element A has a laminated structure of an anti-ferromagnetic layer, a magnetization pinned layer, an intermediate layer and a magnetization free layer, and is formed to have a construction in which a current flows perpendicularly to a film plane. By using an ultrathin magnesium oxide layer having micropores that is preferentially oriented in the (001) direction as the intermediate layer, the magneto-resistance ratio is enhanced, because a current flowing from the magnetization free layer to the magnetization pinned layer (or in the opposite direction) is confined by the metal in the micropores.

A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

A retardation film of the present invention comprises a stretched film of a polymer film containing a norbornene-based resin, wherein the stretched film satisfies the following equation (1) and the equation (2); 100 nm≦(nx−ny)·d≦350 nm . . . (1),0.1≦(nx−nz)/(nx−ny)≦0.9 . . . (2), where the refractive indices in the slow axis direction, the fast axis direction and the thickness direction of the film are nx, ny and nz, respectively, d(nm) is thickness of the film, and the slow axis direction is a direction that the refractive index in film plane is maximum. The retardation film is hard to cause a shift or an unevenness of a retardation value due to a stress.

There are provided a viewing angle controlling system which can be used in a display device for which peep-prevention and viewing-angle-control are required, and makes it possible to control the viewing angle of a display, and an image display device using the same.

The viewing angle controlling system includes: a first polarizer and a second polarizer which are each in the form of a film comprising an absorption dichroic material. The first polarizer has an absorption axis in its film plane, and the second polarizer has an absorption axis in the range of angle from 0 to 45° to the normal line of its film plane.

The invention relates to a process as described in claim of preparing a reflective film comprising a layer of a polymerized mesogenic material with helically twisted structure, wherein the helix axis is perpendicular to the film plane, and containing regions with varying helical pitch, to a reflective film obtainable by such a process, to the use of such a reflective film as reflective broadband or notch polarizer or as a multicolored film or image in liquid crystal displays, as color filter, in effect pigments, for decorative or security applications, and to a liquid crystal display comprising a liquid crystal cell and a reflective polarizer as described in the foregoing and the following, and optionally further comprising one or more compensaters or polarizers.

A magnetic device comprises first through third ferromagnetic layers, first and second intermediate layers and a couple of electrodes. The first ferromagnetic layer includes magnetic layers and one or more nonmagnetic layers which are alternately stacked, at least one layer of the magnetic layers has magnetization substantially fixed to a first direction, and two or more layers of the magnetic layers are ferromagnetically coupled via the nonmagnetic layers while having easy axes of magnetization parallel to a film plane. The second ferromagnetic layer has magnetization substantially fixed to a second direction. The third ferromagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The third ferromagnetic layer has a variable direction of magnetization. The first and second intermediate layers are provided between the ferromagnetic layers. The electrodes are configured to provide write current between the first and second ferromagnetic layers to cause spin-polarized electrons to act on the third ferromagnetic layer so that the direction of magnetization of the third ferromagnetic layer is determined depending on a direction of the current. The ferromagnetic coupling has a strength such that a parallel magnetic alignment of the magnetic layers is maintained when the write current.

To provide an optical film which exhibits excellent retardation values both in the film plane and along the direction perpendicular to the film plane and shows little change in retardation values depending on environmental factors such as humidity, a liquid crystal display showing little change in viewing angle characteristics due to an environmental (humidity) change, and a polarizing plate to be used in the liquid crystal display, the cellulose acylate contains a cellulose acylate which is a mixed fatty acid ester of a cellulose and satisfies formulae specified in the specification, and a polarizing plate and a liquid crystal display using this cellulose acylate film.

A lens-fitted film unit is provided with a thermally expandable axial distance adjusting member which has a thermal expansion coefficient greater than plastic lens elements of a taking lens held by an axially movable lens holder and disposed between the lens holder and a stationary shutter cover and which expands or contracts in accordance with a change in ambient temperature to change an axial distance between the lens holder and a film plane so as thereby to shift a focal point of the taking lens in an axial direction to compensate a variation of the focal length of the taking lens due to a change in refractive power of the plastic lens element which is caused by axial expansion or axial contraction of the plastic lens element due to the change in ambient temperature.

A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or α-Fe₂O₃) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

There are provided a magnetoresistive device having excellent magnetic properties and a magnetic memory apparatus including this magnetoresistive device and which has excellent read and write characteristics.

A magnetoresistive device has an arrangement including a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) being opposed to each other through an intermediate layer 6 to obtain variations in magnetoresistance by an electric current flowing in the direction perpendicular to the film plane. This magnetoresistive device 1 has the pair of ferromagnetic layers 5, 7 composed of the magnetization fixed layer 5 made of a crystalline ferromagnetic layer provided under the intermediate layer 6 and the magnetization free layer 7 being made of an amorphous ferromagnetic layer being provided above the intermediate layer 6, and the magnetic memory apparatus is composed of this magnetoresistive device 1 and a bit line and a word line sandwiching the magnetoresistive device 1 in the thickness direction.

Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain Fe_aCo_bNi_cB_d (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0<c≦35, 10≦d≦30. a+b+C+d=100).

A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.