The invention discloses an STT-MRAM storage unit. The STT-MRAM storage unit comprises a transistor and an MTJ unit, wherein the transistor is arranged on a substrate, and a drain electrode of the transistor is in drain contact with the MTJ unit through a metal wire; the MTJ unit comprises an inner electrode, and a seed layer, a ferromagnetism pinning layer, a non-magnetic barrier layer, a ferromagnetism free layer and an outer electrode which are wrapped on the periphery of the inner electrode; the metal wire is connected with the inner electrode; the seed layer, the ferromagnetism pinning layer, the non-magnetic barrier layer, the ferromagnetism free layer and the outer electrode are not parallel to a plane where the substrate is respectively; and the seed layer, the ferromagnetism pinning layer, the non-magnetic barrier layer, the ferromagnetism free layer and the outer electrode are arranged at intervals with the metal wire. Through the setting form of the MTJ unit in the STT-MRAM storage unit, the thermal stability factor delta is weakened into linear change along with the square change relation of the original plane structure dimensions, so that the thermal stability factor delta can be compensated by using height, and MTJ miniaturization is facilitated. According to the STT-MRAM storage unit, the space can be effectively utilized, high heat stability is guaranteed, the storage density is improved, various storage modes are provided, and the STT-MRAM storage unit has application prospect for storage devices below 20 nm technology nodes.