2096results about How to "Improve driving ability" patented technology

A semiconductor device has an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the main surface of the semiconductor substrate, which second region is different from the first region. An internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is different from an internal stress generated in the channel formation region of the p channel conductivity type field effect transistor. The internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is a tensile stress, while the internal stress generated in the channel formation region of the p channel conductivity type field effect transistor is a compressive stress.

In a shift register circuit, a defective operation while an output signal is not outputted and a drive capability lowering while the output signal is outputted are prevented. A unit shift register comprises a first transistor for supplying a clock signal inputted to a first clock terminal to an output terminal, and the first transistor is driven by a drive circuit. A second transistor is connected between the gate of the first transistor and the output terminal and has a gate connected to the first clock terminal. The second transistor connects the gate of the first transistor to the output terminal based on the clock signal when the gate of the first transistor is at L (Low) level.

It is an object of the present invention to control the plane orientation of crystal grains obtained by using a laser beam, into a direction that can be substantially regarded as one direction in an irradiation region of the laser beam. After forming a cap film over a semiconductor film, the semiconductor film is crystallized by using a CW laser or a pulse laser having a repetition rate of greater than or equal to 10 MHz. The obtained semiconductor film has a plurality of crystal grains having a width of greater than or equal to 0.01 μm and a length of greater than or equal to 1 μm. In a surface of the obtained semiconductor film, a ratio of an orientation {211} is greater than or equal to 0.4 within the range of an angle fluctuation of ±10°.

A field effect transistor can include a vertical channel protruding from a substrate including a source / drain region junction between the vertical channel and the substrate, and an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source / drain region junction. The transistor can also include a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and a gate electrode extending on the side wall toward the substrate to beyond the source / drain region junction. Related methods are also disclosed.

A method of manufacturing a semiconductor device having an n-type FET and p-type FET, each formed over a semiconductor substrate, calls for (a) forming, over the n-type FET and p-type FET, a first insulating film, for generating a tensile stress in the channel formation region of the n-type FET, to cover gate electrodes of the FETs, while covering, with an insulating film, a semiconductor region between the gate electrode of the p-type FET and an element isolation region of the semiconductor substrate; (b) selectively removing the first insulating film from the upper surface of the p-type FET by etching; (c) forming, over the n-type and p-type FETs, a second insulating film, for generating a compressive stress in the channel formation region of the p-type FET, to cover gate electrodes of the FETs; and (d) selectively removing the second insulating film from the upper surface of the n-type FET.

A high-speed shift register circuit is provided. The shift register circuit includes a first transistor supplying a clock signal to a first output terminal, a second transistor discharging the first output terminal, a third transistor supplying the above clock signal to a second output terminal, and a fourth transistor discharging the second output terminal. The gates of the first and third transistors are both connected to a first node, and the gates of the second and fourth transistors are both connected to a second node. The first node is charged by a fifth transistor which is connected between the first node and a first input terminal and which has a gate connected to a second input end.

In a shift register circuit, a reduction of a driving capability caused by an increased operating rate is prevented. A shift register circuit includes a first transistor between an output terminal and a clock terminal, a second transistor between the output terminal and a first power-supply terminal, and a third transistor between the gate of the first transistor and a second power-supply terminal. The shift register circuit further includes a fourth transistor that charges the gate node of the third transistor on the basis of a signal inputted to a first input terminal, and a capacitive element that boosts the gate node of the third transistor that has been charged.

The invention relates to a drive circuit applied to a power switch tube MOSFET, in particular to a drive circuit of a silicon carbide MOSFET, and belongs to the technical field of drive circuits. The drive circuit aims to solve the problem that when an MOSFET in an existing drive circuit is turned off, the reliability is poor. The drive circuit comprises a PWM control circuit, a drive pulse amplifying circuit, a drive resistor Rg, a first diode D1, a resistor R1, a PNP triode Qoff, a second diode D2 and a capacitor C. According to the drive circuit, the PNP triode Qoff, the resistor R1 and the capacitor C form an MOSFET turn-off circuit; when the MOSFET is turned off quickly, a gate pole positive voltage spike caused by Miller currents is effectively suppressed; meanwhile, a gate pole negative voltage spike can also be suppressed through the second diode D2 and the capacitor C, it is guaranteed that the MOSFET is turned off safely and reliably, and the performance advantages of the silicon carbide MOSFET can be given to full play.

The invention provides a narrow bezel touch control display panel, a display device and a manufacturing method of the display panel. The touch control display panel comprises a substrate, substrate through holes, a TFT circuit layer, receiving and emitting circuit layers of an INCELL capacitance touch sensing circuit, an OLED device layer, a back side circuit layer, a polarizer and a cover plate. The periphery of a display Active Area of a display screen is connected with the TFT circuit layer on the top face of the substrate through the substrate through holes VIA, the TFT circuit layer on the top face of the substrate of the display panel and a protective layer of an OLED device are packaged through a cofferdam filling adhesive, it is ensured that the width is minimum, and the narrow bezel effect is achieved. The invention further provides the manufacturing method of the display panel and the display device provided with the display panel.

The invention discloses a low dropout regulator, which comprises an error amplifier, a buffer circuit, a P-channel metal oxide semiconductor (PMOS) regulation transistor, an N-channel metal oxide semiconductor (NMOS) push-pull tube, a voltage division feedback circuit, a compensation circuit and an output circuit, wherein the gate of the PMOS regulation transistor is connected with the output end of the buffer circuit, the source of the PMOS regulation transistor is connected with power voltage, and the drain of the PMOS regulation transistor is used as the output end of the low dropout regulator; the gate of the NMOS push-pull tube is connected with the output end of the error amplifier, the drain of the NMOS push-pull tube is connected with the drain of the PMOS regulation transistor, and the source of the NMOS push-pull tube is grounded; and the error amplifier, the compensation circuit, the buffer circuit, the PMOS regulation transistor, the voltage division feedback circuit and an output circuit form a main control loop, and the error amplifier, the compensation circuit, the NMOS push-pull tube, the voltage division feedback circuit and the output circuit form an auxiliary control loop. According to the low dropout regulator, the transient response of the regulator can be quickened, and the accuracy of output voltage can be improved.

The invention belongs to the field of robots, and relates to a multi-sensor information collection analyzing system, a robot device which performs real-time monitor and adjuvant treatment for autism children by using the system and a control technology of the robot device. In the multi-sensor information collection analyzing system, a plurality of sensors, collectors and information output equipment transmit communication information by adopting a controller area network (CAN) fieldbus, and the distribution type information fusion technology ensures that mounting and clipping of the equipmentto be more convenient and efficient. By adopting the multi-information fusion technology, the ways for the robot to collect interactive object emotions are increased, and the affinity and interactivesuccessful rate of human-machine interaction are improved.

A semiconductor device according to this invention includes: a first insulating layer (11); a first body section (13) including an island-shaped semiconductor formed on the first insulating layer; a second body section (14) including an island-shaped semiconductor formed on the first insulating layer; a ridge-shaped connecting section (15) formed on the first insulating layer to interconnect the first body section and the second body section; a channel region (15a) formed by at least a part of the connecting section in lengthwise direction of the connecting section; a gate electrode (18) formed to cover a periphery of the channel region, with a second insulating layer intervening therebetween; a source region formed to extend over the first body section and a portion of the connecting section between the first body section and the channel region; and a drain region formed to extend over the second body section and a portion of the connecting section between the second body section and the channel region, wherein a semiconductor forming the channel region has a lattice strain.

The invention discloses a wind sand environment and engineering wind tunnel simulation device, in particular to a large opening direct-flow air blowing typed wind sand environment and engineering wind tunnel simulation device which is specially used for simulating wind sand movement and sand control engineering; the wind sand environment and engineering wind tunnel simulation device comprises a tunnel body which comprises an air inlet section (3), a transition section (4), a damp part with a damper (5), a first diffuser (6), a stabilization section (7), a contraction section (8), a speed vehicle (9), a testing section (10) and a second diffuser (11) which are sequentially connected one after another; and the power system is connected with the air inlet section (3) and is used for providing the power for the wind tunnel by a DC motor. The wind sand environment and engineering wind tunnel simulation device can truly simulate the wind sand control, thus pushing the wind sand control technique to go ahead; furthermore, the wind sand environment and engineering wind tunnel simulation device can carry out the test for preventing the diffusion of contamination and the test for the building dynamics characteristic and the like.

The invention discloses a shift register unit, a grid driving circuit and a driving method thereof, relates to the technical field of display, and solves the problems that great charging of pixels cannot be guaranteed due to long reset time of a grid driving signal. According to the shift register unit, an input module is used for pulling up voltage of a pull-up node under the effect of an input signal in the input phase; an output module is used for outputting the grid driving signal under the effect of a clock signal and further pushing up voltage of the pull-up node in the output phase; the output module is used for pulling down voltage of the output end of the output module to reference voltage under the effect of the clock signal in the reset phase; and a first pull-down control module is used for regulating voltage of the output end of the output module to grid turn-off voltage from reference voltage under the effect of a first pull-down control signal. The shift register unit is used for providing the grid driving signal.

The invention discloses a gate driver on array (GOA) circuit for a liquid crystal display device. The liquid crystal display device comprises multiple scanning lines, and the GOA circuit comprises multiple cascaded GOA units. The Nth scanning line of the display area is charged by a Nth level GOA unit control, and the Nth level GOA unit comprises a forward and reverse scanning control circuit, a pull-up circuit, a bootstrap capacitor circuit, a pull-up control circuit and a drop-down holding circuit. The pull-up circuit, the bootstrap capacitor circuit, the pull-up control circuit and the drop-down holding circuit are connected with a grid signal point. The pull-up circuit, the bootstrap capacitor circuit and the drop-down holding circuit are connected with the Nth scanning line. The forward and reverse scanning control circuit is connected with a (N-1)th scanning line and the (N+1)th scanning line. The GOA circuit for the liquid crystal display device is used for improving the stability of the grid signal point and reducing the usage of transistors.

It is an object of the present invention to control the plane orientation of crystal grains obtained by using a laser beam, into a direction that can be substantially regarded as one direction in an irradiation region of the laser beam. After forming a cap film over a semiconductor film, the semiconductor film is crystallized by using a CW laser or a pulse laser having a repetition rate of greater than or equal to 10 MHz. The obtained semiconductor film has a plurality of crystal grains having a width of greater than or equal to 0.01 μm and a length of greater than or equal to 1 μm. In a surface of the obtained semiconductor film, a ratio of an orientation {211} is greater than or equal to 0.4 within the range of an angle fluctuation of ±10°.

The invention discloses a dry sand maker which comprises a hollow crushing cavity (2). A hollow dust removal cavity (5) is arranged under the hollow crushing cavity (2); the upper end of a feeding channel (6) is hermetically connected with a feeding mouth (22) and the lower end (61) thereof is positioned in the dust removal cavity (5) on which an air vent (7) is also arranged; an air duct (8) is arranged in the dust removal cavity (5); the lower end (61) of the feeding channel (6) is staggered with the upper end (81) of the air duct (8) in the horizontal direction; the bottom surface of the dust removal cavity (5) is provided with an outlet (51); a dust absorption component is hermetically connected with the lower end (82) of the air duct (8) or the air vent (7) after passing through the outlet (51). The invention also provides a method for drying sand making simultaneously. By adopting the dry sand maker, the drying sand making can have the advantages of high production efficiency and low environmental pollution.

The invention relates to an inspection robot wheel-claw compound mechanism, comprising a walking drive mechanism and a front clamping mechanism and a rear clamping mechanism. A clamping motor is mounted on the top plate of an arm; the output shaft is matched with a screw with thread on a lifting plate through a screw rod; the lifting plate is sheathed on a vertical polish rod which is mounted at the lower side of the top plate; a front sliding plate and a rear sliding plate are respectively mounted in the front and the rear of the lifting plate; two sides of the lower side of the sliding plate are respectively provided with a guide groove, the bottom of which closes up to the middle; a left clamping jaw and a right clamping jaw are movably mounted on a horizontal moving screw rod, the two ends of which are connected with the vertical polish rod; sliding blocks on the clamping jaws are inserted in the guide groove; rolling wheels are mounted on the tail ends of the clamping jaws; the rear clamping mechanism has the same structure with the front clamping mechanism. In the invention, one motor is used to drive the clamping jaws to move in two directions, thus the structure is simple and the cost is saved; and meanwhile, the positive pressure between a walking wheel and a line is increased via the clamping action of the clamping jaw, thereby increasing friction force, realizing stronger driving capacity; the inspection robot wheel-claw compound mechanism of the invention has high clamping efficiency, light weight and wide application range.

In a shift register circuit, a defective operation while an output signal is not outputted and a drive capability lowering while the output signal is outputted are prevented. A unit shift register comprises a first transistor for supplying a clock signal inputted to a first clock terminal to an output terminal, and the first transistor is driven by a drive circuit. A second transistor is connected between the gate of the first transistor and the output terminal and has a gate connected to the first clock terminal. The second transistor connects the gate of the first transistor to the output terminal based on the clock signal when the gate of the first transistor is at L (Low) level.

A shift register circuit is provided that can decrease a power consumption caused by a clock signal and can achieve a high driving capacity. A unit shift register has a first transistor that activates an output signal when a power supply potential is provided to an output terminal. A pull-up driving circuit for driving the first transistor has a second transistor for providing a clock signal to a node connected to the gate of the first transistor and a boosting circuit for the node. When an output signal of a preceding stage is activated, the second transistor turns on. Thereafter, when the clock signal is activated, and the node is charged, the second transistor turns off. The boosting circuit increases the potential at the node when the second transistor turns off. Therefore, the first transistor can operate in non-saturation region and activate the output signal.

Provided are a semiconductor device capable of improving the drive capacity of a MOS transistor even if the SOI layer is thinned; and a manufacturing method of the device. In a NMOS transistor formed in a NMOS formation region, a source / drain region is formed to penetrate through a buried oxide film and reach a threshold voltage controlling diffusion layer of a semiconductor substrate. In a PMOS transistor formed in a PMOS formation region, a source / drain region is formed to penetrate through a buried oxide film and reach a threshold voltage control diffusion layer of the semiconductor substrate.

The invention discloses an orbital type coal transporting trestle automatic polling robot and system. The polling robot comprises a machine cabin with a track walking mechanism and a polling image acquisition device, the machine cabin is of a closed structure and is provided with a wireless charging receiving module, and a power module, a control module and a wireless communication module are arranged in the machine cabin. The track walking mechanism comprises a walking drive device and a main frame, the main frame is provided with a guide load bearing wheel assembly and a pair of sliding slots, the two sides of the walking drive device are provided with connecting posts which transversely extend out, and the connecting posts are slidably arranged in the sliding slots; and a track mountingposition is formed between the guide load bearing wheel assembly and a track walking component of the walking drive device, one end of each sliding slot is provided with a pressure regulating deviceused for adjusting the frictional force of the track mounting position, and the connecting posts abut against or are supported to the pressure regulating devices. The orbital type coal transporting trestle automatic polling robot and system have the advantages of good protection performance, strong environmental adaptability, safe and reliable charging, strong driving capability, long service lifeand good walking stability.

The embodiment of the invention provides a foldable display panel and a display device. The foldable display panel comprises a first non-folding region, a folding region, a second non-folding region,a plurality of grid electrode lines, a plurality of data lines, a plurality of first data lead pins, a plurality of second data lead pins, a plurality of first data lead lines and a plurality of second data lead lines, wherein the first non-folding region, the folding region and the second non-folding region are arranged in the first direction; the first data lead pins are positioned in the firstnon-folding region; the second data lead pins are positioned in the second non-folding region; the grid electrode lines extend from the first non-folding region in the first direction, pass through the folding region and extend to the second non-folding region; the data lines also comprise first data lines and second data lines; the first data lines are electrically connected with the first data lead pins; the second data lines are electrically connected with the second data lead pins. The folding shaft of the foldable display panel is basically parallel to the data lines. The embodiment alsoprovides the foldable display panel and the display device; the arrangement positions of the data lines and the grid electrode lines are exchanged, so that the data lines cannot generate transverse bending; the data lead pins are only positioned in the non-bending region; the panel reliability is improved.

A differential driving circuit used for low voltage differential signals and an electronic device incorporating the same are provided wherein no differential amplifiers are used or the number of differential amplifiers are reduced, thereby reducing the circuit area and the current consumption and further solving the problem of oscillation caused by noise, while a high driving performance is achieved. There are included a switch circuit an output circuit and a reference potential generating circuit. The switch circuit, which comprises MOS transistors, receives differential signals and outputs current signals. The output circuit comprises an NMOS transistor, an end of which is connected to the power supply potential of a higher potential side, the other end of which is connected to a node of the switch circuit and which acts as a source follower, and an PMOS transistor, an end of which is connected to the power supply potential of a lower potential side, the other end of which is connected to the other node of the switch circuit and which acts as a source follower. The reference potential generating circuit supplies reference potentials to the respective gates of the PMOS and NMOS transistors. The reference potential generating circuit includes a potential varying means that varies the differential potentials with an offset potential kept constant. Further, there is included an emphasis circuit for the output circuit.

The application exposes a miniature four-channel circular flow type triaxial silicon jet gyro; the jet gyro comprises a four-channel circular flow type triaxial angular velocity sensitive element and a PCB, and the sensitive element is electrically connected with the PCB, wherein the sensitive element comprises a PMMA upper cover, an upper silicon board, a lower silicon board, a PMMA bottom cover and a piezoelectric ceramic round oscillator; the piezoelectric ceramic round oscillator is embedded in the PMMA upper cover; the upper silicon board is provided with a jet network; the lower silicon board is provided with a jet network and a hot line; the PMMA upper cover, the upper silicon board, the lower silicon board and the PMMA bottom cover are successively bonded to form the sensitive element. The jet gyro adopts one piezoelectric ceramic round oscillator to drive four-channel circular flow, not only is simple in structure, long in life and low in power consumption, and implements deformation direction of the piezoelectric ceramic round oscillator and direction turning of jet flow network planes; the area of the piezoelectric ceramic round oscillator is large, the driving ability is strong, the jet velocity is high, and the jet gyro sensitivity is high; and angular velocities of three orthogonal directions can be sensitive at the same time, and multi-axis integration is achieved.

The invention provides a manned lunar rover. The manned lunar rover comprises a vehicle chassis system, four driving systems and a casing which is provided with wire mesh tires; the four driving systems are uniformly distributed on the periphery of the vehicle chassis system; every driving system is in linkage connection with a steering system; the steering systems comprise steering shafts; one ends of the steering shafts are in linkage connection with driving shafts; the other ends of the steering shafts and power output ends of steering motors are fixed through speed reducers; every steering system is connected with the vehicle chassis system through a suspension system. The manned lunar rover has strong driving capability adapting to bad road conditions and can meet the requirements of special road conditions and special environments on the surface of the moon.

An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat.