The invention discloses a GaN HEMT discrete multi-stage active
gate driver and a driving method, and relates to the technical field of gate drivers, and the driver comprises a PWM generation module which outputs a PWM high-frequency
signal; the driving
signal generation module is used for generating a driving
signal through a
logic gate combination PWM signal and adjusting a driving stage; the gate driving module comprises two independent dual-channel gate drivers, each driver is provided with two independent driving units, each driving unit comprises a driving stage, and the driving stages are controlled through driving signals to enable the GaN HEMT to have discrete
gate resistance values; and the device service
life condition prediction module is used for optimizing an active grid driving strategy by collecting dynamic electrical parameters and thermodynamic parameters of the device in real time. According to the invention, switching oscillation and
voltage and current overshoot generated by the GaN HEMT at an ultrahigh switching speed are effectively suppressed, real-time service life prediction and
active protection of the GaN HEMT are realized, and the
system reliability is improved.