The invention discloses a preparation method of a micron-sized
metal thin film array, and belongs to the technical field of thin film deposition processes. A micron-sized
metal thin film array is prepared by adopting an unbalanced
magnetic field cathode and using a vertical
sputtering mode, the thickness of a
metal thin film is 100-500nm, and a thin
film grain growth mode is a nano columnar
crystal. The preparation method comprises the following steps: (1) through combination of a magnetron
sputtering method and a
mask layer, a circular metal film array with the
diameter consistent with that of holes in the surface of the
mask layer can be precisely prepared on a large scale; (2) a non-equilibrium
magnetic field cathode is used,
plasma can be restrained on the surface of the target material, the
utilization rate of the target material is improved, and meanwhile, sputtered target material atoms are restrained, so that the target material atoms can vertically pass through holes of the
mask layer and are deposited on the surface of the substrate; and (3) the metal film array with
uniform size and consistent thickness can be obtained by adjusting the technological parameters during magnetron
sputtering, such as air pressure, power, target-substrate distance and rotating speed, so that the preparation difficulty of the film array is effectively reduced, and meanwhile, the film quality is improved.