35 results about "Debye length" patented technology

Techniques and apparatus for substantially reducing and / or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

A sensor including a surface plasmon resonance detector with a reservoir for containing a liquid sample. The sensor further includes a sensing metallic film positioned within the reservoir so that at least a majority of a surface of the sensing metallic film is to be in contact with the liquid sample being housed within the reservoir. The sensory also includes a semiconductor device having a contact in electrical communication with the sensing metal containing film that is positioned within the reservoir. The semiconductor device measures the net charges of molecules within the liquid sample within a Debye length from the sensing metallic film.

Provided is a field effect transistor (FET) type biosensor including a source electrode, a gate, and a drain electrode. A ligand that can bind to a side of a nucleic acid is added to the surface of the gate. In a conventional FET type biosensor, it is difficult to detect a signal within the debye length because a target nucleic acid is directly fixed to the surface of a gate of the conventional FET. However, in the present invention, this problem can be overcome and the debye length can be increased by treating the surface of a gate of an FET sensor with a ligand that can bind to a side of a nucleic acid. The ligand can be adsorbed onto the surface of the gate. In this case, the nucleic acid is adsorbed parallel to the surface of the gate, not perpendicular to the surface of the gate, thus generating an effective depletion region. In addition, hybridization efficiency can be increased because a hybridized sample can be injected into an FET sensor at high ionic strength.

Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer / substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.

The systems and methods described herein include a sensor for suitable for sensing chemical and biological substances. The sensor comprises a semiconductor layer formed in or on a substrate and a channel having nano-scale dimensions formed in the semiconductor layer, where the structure creates an electrically conducting pathway between a first contact and a second contact on the semiconductor layer. In certain preferred embodiments, the nano-scale channel has a trapezoidal cross-section with an effective width and exposed lateral faces, where the effective width is selected to have same order of magnitude as a Debye length (LD) of the semiconductor material of which the semiconductor layer is formed.

Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer / substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.

The invention relates to a preparation method for a hierarchical hollow cubic stannic oxide nanometer particle composed of ultrafine nano-rods and belongs to the technical field of nanometer material preparation. The method comprises the following steps: taking solid cubic zinc hydroxystannate as a precursor, covering a layer of stannic oxide nano-rods on the surface of the zinc hydroxystannate after the hydrothermal reaction for a period of time, and meanwhile, decomposing the inner zinc hydroxystannate, thereby acquiring the hierarchical hollow cubic stannic oxide nanometer particle composed of the ultrafine nano-rods in the shape similar to the shape of zinc hydroxystannate. Compared with the traditional template method, the preparation method has the advantages of low cost, few steps and simple operation; the prepared hollow stannic oxide nanometer particle has an obvious hierarchical structure and a mesoporous structure, is difficult to agglomerate, is excellent in crystallinity and is high in specific surface area; the hierarchical hollow cubic stannic oxide nanometer particle is composed of a large quantity of orderly arrayed nano-rods and the size of the nano-rods is close to the debye length; the air-sensitive characteristic is excellent; and the hierarchical hollow cubic stannic oxide nanometer particle has a potential application value in the field of air-sensitive sensors.