The present invention provides a hole layer optical proximity correction method for avoiding large aspect ratio pattern. The hole layer optical proximity correction method comprises: A, providing an original pattern to be corrected; B, providing a process model of OPC; C, calculating the hole outline according to the original pattern or the post-OPC pattern and the process model; D, calculating the EPE of each edge of the post-OPC pattern; E, determining whether the EPE meets the predetermined target, if not, performing a step F, and if so, performing a step I; F, determining whether the aspect ratio after the OPC is larger than the requirement and the lengths of the two edges in the length direction and the width direction are larger than two times the minimum segment length in each pattern, if so, performing a step G and then performing a step H, and if not, directly performing the step H; G, cutting the edge into a plurality of segments on the target layer; H, moving the edge, and returning to the step C; and I, outputting the post-OPC pattern. According to the present invention, the good fidelity can be obtained during the mask plate manufacturing process, and the high precision at the OPC simulation stage can be ensured.