Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

432 results about "Large aspect ratio" patented technology

Irregular-shape body, reflection sheet and relection-type liquid crystal display element, and production method and production device therefor

In a method for manufacturing a reflector having a plurality of convex portions 4 that are obtained by means of melt deformation of column-shaped bodys 15 formed of a photosensitive resin material, the photosensitive resin material has aspect ratio vs. average tilt angle characteristics in which an average tilt angle theta reaches a maximum value through an incremental change process and then converges to a certain value through a decremental process when an aspect ratio is gradually increased from a value close to zero, provided that the average tilt angle of the convex portion is an angle of elevation from the outer periphery of the bottom surface of the convex portion 4 to an apex of the convex portion and that the aspect ratio is a ratio of the height of said column-shaped body 15 with respect to the width thereof. A set value for the aspect ratio of the column-shaped body 15 that is obtained after the development step is determined to be a larger aspect ratio than a starting point from which convergence to said certain value begins. This configuration provides a reflector having good contrast characteristics and PAPER WHITE APPEARANCE, and a reflective liquid crystal display panel that uses the above-mentioned reflector.
Owner:JAPAN DISPLAY CENT INC

Nanometer material transmission electron microscope in-situ testing chip, preparation method and applications thereof

The present invention discloses a nanometer material transmission electron microscope in-situ testing chip, a preparation method and applications thereof, and belongs to the technical field of nanometer material performance in-situ testing. The chip comprises a silicon substrate, insulating layers and a film window, wherein the insulating layer respectively grows on both surfaces of the silicon substrate, a metal film or device or a semiconductor function film or device grows on the chip front surface insulating layer so as to apply various physical and chemical effects on a sample, the center of the chip is provided with the film window, and the film window region is provided with a electron beam penetrating long hole or electron beam penetrating long groove having a large aspect ratio. According to the present invention, the transmission electron microscope sample can be subjected to in-situ measurement under the atomic scale resolution, the nano-wire samples and the nano-tube samples can be subjected to in-situ characterization, the bulk samples and the heterojunction interface samples can be subjected to in-situ characterization, the placement of the sample through the micro manipulator in the focused ion beam system and the laboratory can be achieved, and the sample transferred and fixed on the chip can be continuously processed by using the ion reduction equipment.
Owner:NANJING UNIV

Structure having specific surface shape and properties and (METH)acrylic polymerizable composition for formation of the structure

InactiveUS20090246494A1Excellent in antireflection performance of lightSimple structureSynthetic resin layered productsOptical articlesLight irradiationEngineering
A surface shape and physical properties required for a structure having an antireflection performance of light and an improved performance of light permeability have been found, particularly the structure having surface scratch resistance is provided, a composition capable of forming the structure having such a particular structure and physical properties is provided, and further a composition which can easily form the structure which is excellent in antireflection performance of light and an improved performance of light permeability and has a large aspect ratio is provided. That is, the present invention is the structure having convex parts with an average height of 100 nm or more and 1000 nm or less or concave parts with an average depth of 100 nm or more and 1000 nm or less on its surface wherein the convex parts or the concave parts are present at an average cycle of 100 nm or more and 400 nm or less in at least one direction, characterized in that the structure is obtained by polymerizing a (meth)acrylic polymerizable composition by light irradiation, electron beam irradiation and/or heating and a storage elastic modulus at 180° C. or above is 0.5 GPa or more.
Owner:THE INCTEC INC

Preparation of silicon dioxide nano-tube

InactiveCN101280457AAvoid disadvantages such as uneven hydrolysisHigh yieldPolycrystalline material growthSilicon oxidesAmmonium hydroxideLarge aspect ratio
The invention provides a preparation method of silicon dioxide nano-tubes, which includes the following steps. (1) The ethanol solution of tartrate is in preparation. The ultrasonic is implemented until the tartrate is dissolved completely, so that a the first solution can be obtained, wherein the concentration of tartrate is 0.01 to 0.04mol / L. (2) The ammonia solution with the weight percentage concentration of 24% to 28% is added to the first solution obtained from the first step, thus a the second solution is obtained, wherein the volume ratio of the ammonia solution and the first solution is 0.2 to 0.6. (3) In a state of agitation, the silicon ester is dropped into the second solution obtained from the second step within 0 to 2 hours, which then stands for 0 to 24 hours after the dropping is completed. Thereby a white gel is obtained, wherein the volume ratio of the silicon ester and the second solution is 0.05 to 0.2. (4) The white gel obtained from the third step is repeatedly washed with the deionized water ultrasonic. Afterwards, the white floc obtained from the washing is dried, so that the silicon dioxide nano-tubes are obtained. Therefore, the method of the invention has the advantages of high yield ratio, large aspect ratio, uniform size and so on.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI

Full automatic electroplating production line

InactiveCN107012496AUniform plating qualityRealize automatic loading and unloading operationElectrolysis componentsSemiconductor devicesProduction lineEngineering
The invention discloses a full automatic electroplating production line which comprises a plurality of plating piece loading mechanisms, an electroplating device and a pass back mechanism. The plating piece loading mechanisms comprise a conductive rod, a swing support and a swing driving piece, the conductive rod is assembled on the swing support, and the swing driving piece is connected with the swing support; the electroplating device comprises a feeding station, an electroplating pretreatment station, an electroplating station, an electroplating aftertreatment station, a discharging station and a plating piece conveying mechanism; the feeding station is provided with a feeding mechanical arm, the electroplating station is provided with a plurality of electroplating grooves capable of containing a plurality of plating pieces, and a discharging mechanical arm is arranged on the discharging station; and the pass back mechanism runs from the outside side of the discharging station to the inlet side of the feeding station, and the discharged plating piece loading mechanisms are sent from the discharging station to the feeding station. According to the embodiment, full automatic electroplating is achieved, the unified electroplating quality of all plating pieces can be kept, the full automatic electroplating production line is suitable for plating pieces with large aspect ratio, automatic feeding and discharging operation is achieved, the labor intensity is reduced, and the working efficiency is improved.
Owner:DONGGUAN WERY DOOD CIRCUIT BOARD EQUIP

Large-aspect-ratio hollow-thin-wall thin and long shaft precision detection equipment and detection method thereof

ActiveCN106568387AMeasurement data is stableThe measurement method is reasonableUsing optical meansHead movementsEngineering
The invention belongs to the large-aspect-ratio deep hole inner type cavity and external diameter form and location tolerance precision detection equipment filed and relates to large-aspect-ratio hollow-thin-wall thin and long shaft precision detection equipment and a detection method thereof. The detection equipment comprises a pedestal, a measuring bar, an inner measuring head and a movement mechanism, an outer measuring head and the movement mechanism, a workpiece-support mobile platform, a calibration ring, a measured workpiece and a control processing unit. The workpiece-support mobile platform can drive the measured workpiece to move along an X direction. The inner measuring head and the isntalled movement mechanism, and the outer measuring head movement mechanism move along a Z direction. The calibration ring is used for establishing connection between the inner and outer measuring head. The control processing unit is used for compiling and measuring the program, collecting measured data and carrying out data processing so as to acquire a demanded workpiece form and location tolerance. By using the large-aspect-ratio hollow-thin-wall thin and long shaft precision detection equipment and the detection method thereof, measurement accuracy is high, a measurement length is long, measuring efficiency is high and usage is convenient.
Owner:CHINA PRECISION ENG INST FOR AIRCRAFT IND AVIC

Hole layer optical proximity correction method for avoiding large aspect ratio pattern

The present invention provides a hole layer optical proximity correction method for avoiding large aspect ratio pattern. The hole layer optical proximity correction method comprises: A, providing an original pattern to be corrected; B, providing a process model of OPC; C, calculating the hole outline according to the original pattern or the post-OPC pattern and the process model; D, calculating the EPE of each edge of the post-OPC pattern; E, determining whether the EPE meets the predetermined target, if not, performing a step F, and if so, performing a step I; F, determining whether the aspect ratio after the OPC is larger than the requirement and the lengths of the two edges in the length direction and the width direction are larger than two times the minimum segment length in each pattern, if so, performing a step G and then performing a step H, and if not, directly performing the step H; G, cutting the edge into a plurality of segments on the target layer; H, moving the edge, and returning to the step C; and I, outputting the post-OPC pattern. According to the present invention, the good fidelity can be obtained during the mask plate manufacturing process, and the high precision at the OPC simulation stage can be ensured.
Owner:SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products