14 results about "Scanning tunneling microscope" patented technology

The application relates to a ferroelectric monolayer vanadium trichloride film and a preparation method thereof. The method comprises the following steps: evaporating and depositing VCl3 powder on the surface of a NbSe2 substrate under an ultrahigh vacuum atmosphere, and performing annealing treatment, so that the ferroelectric monolayer vanadium trichloride film is obtained. The sample preparation strategy of molecular beam epitaxy under an ultrahigh vacuum environment is used, high-purity VCl3 powder is evaporated and deposited on a NbSe2 substrate, an atomically flat monolayer VCl3 sample is obtained through annealing treatment, in-situ scanning tunneling microscope technology and scanning tunneling spectrum technology are combined, and it is determined that the monolayer VCl3 is a semiconductor material with ferroelectricity. The method provides a new method and idea for introducing ferroelectricity in the family of transition metal trichlorides, has high application potential and scientific research value, meanwhile, the successful introduction of ferroelectricity in the system also provides a new platform for carrying out multi-state regulation and research.

The present application relates to a kind of scanning tunneling microscopes and its artificial intelligence auxiliary control method, the scanning tunneling microscope includes sample stage, scanning main body device and shock absorbing frame;The sample stage includes first platform, cross slide and object platform arranged sequentially from bottom to top;The scanning main body device includes second platform, third platform and top platform arranged sequentially from bottom to top, and scanning head main body and driving device, sample stage and scanning main body device are placed on shock absorbing frame as a whole.The present application scanning tunneling microscope has the characteristics of lower cost, easy to build, and the space occupied is small, and its artificial intelligence auxiliary control method, using artificial intelligence is realized Automation control, greatly reduce the difficulty of equipment operation, it is advantageous to the completion of high-throughput scanning.

The invention discloses an atomic-scale construction method for manufacturing a semiconductor substrate quantum simulator, which comprises the following steps: firstly, depositing singly distributed metal atoms on a semiconductor substrate at a controllable deposition rate by adopting a vacuum thermal evaporation method, and then depositing metal atoms on the semiconductor substrate at a controllable deposition rate by utilizing a longitudinal control method of a scanning tunneling microscope (STM). The metal atoms adsorbed on the surface of the substrate are carried at a target position by accurately regulating and controlling the dragging speed of the needle tip, the tunnel junction bias voltage and the tunneling current, so that lifting, placing and moving of a single atom are realized. The construction of artificial quantum dots and quantum dot molecules is realized by regulating and controlling the distance between metal atoms. A source electrode, a drain electrode and a grid electrode of quantum dot molecules are controlled in an integrated mode through vacuum evaporation, and the quantum simulator capable of simulating quantum behaviors of a specific molecular structure is formed. According to the invention, the coupling strength of the artificial quantum dot molecules is accurately regulated and controlled through the external grid voltage, and the quantum characteristics of molecule front track filling and electron transport kinematics thereof can be accurately simulated.

This invention discloses an atomic-level construction method for a fixed-axis molecular rotor and its array on a semiconductor substrate. Metal atoms and phthalocyanine molecules are deposited on the semiconductor substrate surface using an ultra-high vacuum thermal evaporation method. The phthalocyanine molecules are laterally manipulated using a scanning tunneling microscope (STM) to place them onto the surface-adsorbed metal atoms. The metal atoms are then longitudinally manipulated using the STM to place them onto the phthalocyanine molecules, resulting in a metal atom-phthalocyanine molecule-metal atom fixed-axis molecular rotor composite structure. The rotation and control of the molecular rotor are achieved by applying a gate voltage to regulate the local potential. This method achieves atomic-level precise anchoring of the molecular rotor composite structure and realizes the rotor array arrangement. The rotation speed is controlled by regulating the local potential through the gate voltage of pre-embedded electrodes. By precisely designing the molecular rotor array using individual atoms and molecules as basic units, the problem of the inability to reposition and arrange molecular structures is solved.

The invention discloses a surface artificial nanostructure state density measurement method based on a two-step deconvolution algorithm. The method comprises the following steps: firstly, selecting a reference feature; performing scanning tunneling spectrum measurement by using a needle point of the scanning tunneling microscope in a constant-height mode to obtain a reference differential conductivity spectrum; solving a first optimization problem containing a regularization item by using the reference state density of the reference feature and the measured reference differential conductivity spectrum to obtain an effective tip-related tunneling function; keeping the measurement conditions unchanged, and performing scanning tunnel spectrum measurement above the to-be-measured sample to obtain a sample differential conductivity spectrum; and by using the effective tip-related tunneling function and the sample differential conductivity spectrum, through solving a second optimization problem containing a regularization item, performing inversion to obtain the state density of the sample to be measured. The method is wide in application range, simple in measurement step and capable of adapting to a complex needle point structure.

The invention relates to the technical field of intelligent nanometer image analysis. The invention discloses an atomic-scale precision surface feature recognition and positioning method based on deep learning multi-modal image fusion, and the method can improve the recognition efficiency and accuracy of a plurality of adsorption molecules and defects on the surface of a crystal, and achieves the automatic recognition and precise positioning of the plurality of adsorption molecules and defects on the surface of the crystal. The method comprises the steps that a target fusion image is obtained, the target fusion image is formed by fusing a positive bias voltage scanning image and a negative bias voltage scanning image, and the positive bias voltage scanning image is an image of the surface of a crystal collected by a scanning tunneling microscope in a positive bias voltage mode; the negative bias scanning image is an image of the surface of the crystal collected by the scanning tunneling microscope in a negative bias mode; and inputting the target fusion image into an atomic-scale precision surface feature recognition and positioning model for positioning detection processing, and obtaining recognition and positioning results of various adsorption molecules and defects on the surface of the crystal.

The utility model discloses a graphene sample positioning structure for a scanning tunneling microscope, which relates to the technical field of graphene processing and comprises a bottom plate, the top of the bottom plate is connected with a supporting table, a driving mechanism is arranged between two sides of the inner wall of the supporting table and extends to one side of the bottom plate, two transverse grooves are formed in the top of the bottom plate, and the transverse grooves are communicated with the supporting table. The driving mechanism is provided with two connecting assemblies, the two connecting assemblies respectively penetrate through the two transverse grooves to extend to the top of the bottom plate, and the two connecting assemblies are respectively provided with a clamping mechanism. Under the action of the driving mechanism, the two connecting assemblies and the two clamping mechanisms, the special-shaped graphene sample can be conveniently positioned and clamped; the graphene sample does not need to be fixed by dropping silver colloid all the time, so that the working efficiency of positioning the special-shaped graphene sample is improved.

The invention discloses a method for in-situ synthesis of graphene nanoribbons on the surface of a semiconductor. The method realizes direct surface synthesis of a monatomic layer nanostructure on semiconductor titanium dioxide. The method comprises the following steps: further annealing by adopting ion sputtering and circulating the operation to modify the surface of a semiconductor substrate, and carrying out two-step synthesis reaction of the graphene nanobelt on the modified semiconductor surface. According to the method, n-type self-doping occurs on the originally inert titanium dioxide surface through repeated argon ion sputtering and high-temperature annealing steps, then specific precursor molecule brominated dianthracene is heated and evaporated to the heated surface for reaction, and the form of the generated graphene nanobelt can be represented through a scanning tunneling microscope. According to the method, the catalytic inertia of the semiconductor surface on the nanobelt synthesis reaction can be overcome, so that the relatively long graphene nanobelt with controllable width can be directly generated on the semiconductor.

The invention discloses a preparation method of a grid electrode of a hundred-bit-level quantum computing chip and the quantum computing chip. The preparation method of the grid electrode of the hundred-bit-level quantum computing chip comprises the following steps: processing and preparing an alignment mark on a substrate processed by a laser direct writing technology on a hydrogen mask of a scanning tunneling microscope; processing a quantum device core structure on the substrate; secondarily processing a top electrode overlay mark on the substrate to obtain a second standard substrate; a plurality of top electrode layers are manufactured on the oxide layer in an overlay mode through the top electrode overlay marks, the top electrode layers are arranged in a staggered mode and partially overlapped in the vertical direction, and the hundred-bit-level quantum computing chip is obtained. According to the method, a plurality of top electrode layers are processed on the oxide layer in a multi-layer stacking mode, different layers do not influence one another, the space utilization rate of the quantum computing chip is greatly increased while the space between the top electrodes is guaranteed, and therefore preparation of the hundred-bit-level quantum computing chip can be achieved in the limited on-chip space.

The utility model relates to the technical field of vacuum interconnection experiment devices, and particularly discloses an ultrahigh vacuum sample support interconnection device which comprises a son support, a flag-shaped mother support and a clamping groove type mother support. The flag-shaped mother support comprises a first mother support body, a first U-shaped heightening table is arranged on the first mother support body, a first U-shaped groove is formed in the top of the first U-shaped heightening table and used for allowing the son support to be inserted, and the inserting direction of the son support is perpendicular to the central axis direction of the flag-shaped mother support. The clamping groove type female support comprises a second female support body, a half space of the upper portion of the second female support body is a second U-shaped heightening table, and the other half space is reserved. A second U-shaped groove is formed in the top of the second U-shaped heightening table and used for allowing the child support to be inserted therein, and the opening direction of the second U-shaped groove faces the reserved space in the upper portion of the second mother support body. The sub-supports are attached to the bottom face of the first U-shaped groove or the bottom face of the second U-shaped groove. According to the utility model, ultrahigh vacuum interconnection transmission among molecular beam epitaxy, an angle resolution photoelectron spectroscopy system and an ultralow temperature scanning tunneling microscope is realized.

The application discloses a minimum energy step-based electrostatic field micro-step jump detection method, which comprises the following steps: preparing an experimental device, wherein the experimental device comprises a scanning tunneling microscope, a piezoelectric ceramic displacement table and a Kelvin probe force microscope; the probe needle tip curvature radius of the scanning tunneling microscope is less than 2 nm; the extreme short-range ranging of the scanning tunneling microscope probe is 0.5 nm-5 nm; and the displacement precision of the piezoelectric ceramic displacement table is 0.0001 nm; preparing a single-charge quantum dot as a point charge to simulate a proton electric field; and fixing the single-charge quantum dot on a substrate. The purpose of the application is to provide the minimum energy step-based electrostatic field micro-step jump detection method, which can measure the field strength change of an electrostatic field under an extremely short range and extremely weak field strength, can observe whether the electric field can only jump and cannot slide, can verify that the point charge electric field is a minimum energy integer step, the field strength cannot continuously change, can further determine the hydrogen atom energy level and the existence of the step of the proton electric field.

The application discloses a method for catalyzing alpha-C-H halogenation of carboxylic acid based on a needle tip electrostatic field, and belongs to the technical field of catalytic chemistry. Alpha-C-H containing carboxylic acid and a metal bromide salt are selected as reaction substrates, a local electrostatic field is applied by a metal needle tip of a scanning tunneling microscope (STM), alpha-bromination of the carboxylic acid is induced under normal temperature and without an additional chemical catalyst, and alpha-brominated carboxylic acid is synthesized. Compared with a traditional HVZ reaction, the method avoids the use of a highly toxic reagent such as phosphorus trihalide and harsh high-temperature conditions, so that the reaction process is more green and mild, and no additional halogenating agent or catalyst needs to be introduced, thereby providing a new path for synthesis of alpha-brominated carboxylic acid, which is environment-friendly, simple to operate and does not depend on toxic reagents.

The utility model discloses a sample support and a mobile sample table used under a vertical scanning tunneling microscope, the sample support comprises a sample disc, a sealing plate is arranged on the sample disc, a sealing ring is arranged between the sample disc and the sealing plate, the sample disc outside the sealing ring and the sealing plate are locked through a screw, and the sample disc is fixed on the sealing ring. A sample placing area is arranged on the sample disc corresponding to the inner side of the sealing ring, an avoiding hole is formed in the sealing plate corresponding to the sample placing area, the movable sample table comprises the sample support, and the sample support is arranged on a two-axis mechanism to realize plane movement. The sample dropping device can effectively frame the dropping position of a sample, and is convenient to operate and convenient to detect.

The invention discloses a method for processing a patterned two-dimensional layered material with a dangling bond-free closed edge, which comprises the following steps of: cutting a double-layer two-dimensional layered material by using a tip of a scanning tunneling microscope under the conditions of ultrahigh vacuum and low temperature, and realizing atomic precision energy injection by controlling the magnitude and duration of applied pulse voltage. And performing atomic-scale local processing along the specific atomic chain direction of the material to obtain two layers of flat and aligned fresh edges, and re-bonding to form a dangling bond-free closed edge. According to the method, atomic-scale precise controllable cutting of the two-dimensional layered material is achieved, the effects of high cutting precision and low processing power consumption are achieved, and the problems of edge pollution and stray electronic states caused by the fact that edge dangling bonds randomly adsorb environmental molecules after patterning processing are solved.