The invention relates to a detection method of a
scanning electron microscope. The detection method can be used for detecting the defect of a
wafer provided with a plurality of chips, and comprises the steps of: importing a file of the
wafer with a defect; putting the
wafer to be detected on an objective table of the
scanning electron microscope; setting a corner of a certain
chip arranged on the wafer to be detected as an initial position; correcting the position of the wafer to be detected; obtaining the offset value of the levels of the wafers arranged at the central parts of cavities of two
machine types; selecting the
chip to be detected, and correcting the coordinate of the corner of the
chip in a defect scanning
machine according to the offset value of the levels of the wafers; leading the corner of the chip to be moved to the center of the image of a
display device in a state of amplifying the image, and obtaining the offset value of the levels of the chips arranged at the central parts of the cavities of the two
machine types; obtaining the corrected coordinate of the defect based on the offset value of the levels of the wafers and the offset value of the levels of the chips; and according to the corrected coordinate of the defect, leading the defect to be detected to be positioned under an
electron gun of the defect scanning machine, and therefore, the feature of the defect can be rapidly and accurately caught.