Detection method of scanning electron microscope

Abstract

The invention relates to a detection method of a scanning electron microscope. The detection method can be used for detecting the defect of a wafer provided with a plurality of chips, and comprises the steps of: importing a file of the wafer with a defect; putting the wafer to be detected on an objective table of the scanning electron microscope; setting a corner of a certain chip arranged on the wafer to be detected as an initial position; correcting the position of the wafer to be detected; obtaining the offset value of the levels of the wafers arranged at the central parts of cavities of two machine types; selecting the chip to be detected, and correcting the coordinate of the corner of the chip in a defect scanning machine according to the offset value of the levels of the wafers; leading the corner of the chip to be moved to the center of the image of a display device in a state of amplifying the image, and obtaining the offset value of the levels of the chips arranged at the central parts of the cavities of the two machine types; obtaining the corrected coordinate of the defect based on the offset value of the levels of the wafers and the offset value of the levels of the chips; and according to the corrected coordinate of the defect, leading the defect to be detected to be positioned under an electron gun of the defect scanning machine, and therefore, the feature of the defect can be rapidly and accurately caught.

Description

technical field [0001] The invention relates to a scanning electron microscope detection method, in particular to a scanning electron microscope detection method for quickly detecting wafers. Background technique [0002] In the manufacturing process of semiconductor devices, the detection of wafers is very important to ensure the quality of products. By detecting and analyzing the defects of the wafer, the cause of the defects can be found, thereby improving the yield and stabilizing the operation of the production line. [0003] Currently, inspection of wafers for defects using a scanning electron microscope is a relatively common method. The basic structure of the scanning electron microscope in the prior art will be briefly described below. [0004] see figure 1 , figure 1 It is a schematic diagram of the main structure of the existing scanning electron microscope. Such as figure 1 As shown, the scanning electron microscope mainly includes a display, a lens barrel ...

AI Technical Summary

Problems solved by technology

[0006] When using this existing method for wafer defect detection, since the deviation value is obtained by operating on the wafer-level scan image, what this method corrects is a larger range (wafer-level ) deviation, its accuracy is low, and it is difficult to capture defects through one inspection. Usually, it is necessary to compare images in a relatively large range to determine the exact location of the defect, so as to complete the final inspection. Such inspections will cost more A lot of time will affect the production capacity of the machine

[0007] With the development of integrated circuit technology, the size of the chip is getting smaller and smaller, and the size of the defect on the wafer is also getting smaller and smaller, which will bring more and more problems to confirm its shape with a scanning electron microscope. Difficulty, the existing above-mentioned detection methods have actually been difficult to meet the accuracy requirements of actual production

Since the number of defects on a wafer is related to its production quality, the detection and observation of defects has become very important. In addition, the size of the wafer will become larger and larger, and the number of defects that need to be inspected on the wafer will increase. , the existing detection methods are still difficult to meet the detection speed requirements of actual production

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