2121 results about "Electron gun" patented technology

A multi-column electron beam inspection system is disclosed herein. The system is designed for electron beam inspection of semiconductor wafers with throughput high enough for in-line use. The system includes field emission electron sources, electrostatic electron optical columns, a wafer stage with six degrees of freedom of movement, and image storage and processing systems capable of handling multiple simultaneous image data streams. Each electron optical column is enhanced with an electron gun with redundant field emission sources, a voltage contrast plate to allow voltage contrast imaging of wafers, and an electron optical design for high efficiency secondary electron collection.

A closed-loop control method for an electron beam freeform fabrication (EBF³) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF³ process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF³ apparatus to control the EBF³ process in a closed-loop manner.

A method for increasing the resolution when forming a three-dimensional article through successive fusion of parts of a powder bed, said method comprising providing a vacuum chamber, providing an electron gun, providing a first powder layer on a work table inside said vacuum chamber, directing an electron beam from said electron gun over said work table causing the powder layer to fuse in selected locations to form a first cross section of said three-dimensional article, providing a second powder layer on said work table, directing the electron beam over said work table causing said second powder layer to fuse in selected locations to form a second cross section of said three-dimensional article, reducing the pressure in the vacuum chamber from a first pressure level to a second pressure level between the providing of said first powder layer and said second powder layer.

A method for forming a carbon nanotube array on a metal substrate includes the following steps: providing a metal substrate (11); depositing a silicon layer (21) on a surface of the metal substrate; depositing a catalyst layer (31) on the silicon layer; annealing the treated substrate; heating the treated substrate up to a predetermined temperature in flowing protective gas; introducing a carbon source gas for 5-30 minutes; and thus forming a carbon nanotube array (51) extending from the treated substrate. Generally, any metallic material can be used as the metal substrate. Various carbon nanotube arrays formed using various metal substrates can be incorporated into a wide variety of high power electronic device applications such as field emission devices (FEDs), electron guns, and so on. Carbon nanotubes formed using any of a variety of metal substrates are well aligned, and uniformly extend in a direction substantially perpendicular to the metal substrate.

A method for forming a carbon nanotube array using a metal substrate includes the following steps: providing a metal substrate (11); oxidizing the metal substrate to form an oxidized layer (21) thereon; depositing a catalyst layer (31) on the oxidized layer; introducing a carbon source gas; and thus forming a carbon nanotube array (61) extending from the metal substrate. Generally, any metallic material can be used as the metal substrate. Various carbon nanotube arrays formed using various metal substrates can be incorporated into a wide variety of high power electronic device applications such as field emission devices (FEDs), electron guns, and so on. Carbon nanotubes formed using any of a variety of metal substrates are well aligned, and uniformly extend in a direction substantially perpendicular to the metal substrate.

An x-ray tube comprising an electron gun assembly having an electron gun container housing an electron generator for generating electrons in a first direction along a first axis. The beam of electrons impinges upon an anode which emits x-rays in response to the beam of electrons. The gun container is characterized by having a discharge end comprising a solid spherical shape.

An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

The ionization device of the present invention is intended for use in conjunction with an aerosol TOF MS operating in a continuous mode and is capable of ionizing particulated substances in a wide range of particle masses. In the illustrated embodiment, the ionization unit consists of three coaxial cylindrical bodies having a three aligned longitudinal slits for directing electron beams from externally located electron gun onto the axially arranged flow of droplets. The cylindrical bodies are connected to voltage sources so that the external cylindrical body functions as an anode that extracts electrons from the current-heated filament. The central cylindrical body, in combination with the aforementioned anode, serves as an electron-energy control member for precisely controlling and selecting the energy of electrons that reach the flow of particles, while the inner cylindrical body functions as a decelerating member that can be used for adjusting energy of electrons which reached the flow of particles. The heated filament of each electron gun, which is used as a source of electrons, is inclined with respect to the aforementioned longitudinal axis whereby modulation applied to the elongated outer electrode of the electron gun provides different ionization conditions for specific particles of predetermined masses for analysis of which the aerosol TOF MS is tuned.

An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.

A maskless, direct write electron lithography apparatus for accurately and simultaneously writing plural sub-micron patterns on a silicon substrate employs plural parallel electron beams with precise X-Y mechanical translation of the substrate to provide low cost, high throughput integrated circuit (IC) fabrication. Plural compact micro electron gun assemblies arranged in a I×J rectangular grid each simultaneously expose one IC pattern on the substrate, with each electron gun assembly including a K×L array of individually controlled electron guns emitting K×L electron beams. The regular, small spacing between electron beams in each array, i.e., approximately 1 mm or less, requires a correspondingly small X-Y translation of the substrate to write the entire wafer. Each electron gun array includes plural AC blanked cathodes and DC biased plates having plural aligned beam passing apertures. A computer controlled pattern generator synchronized with wafer X-Y translation controls the duration and timing of the cathode blanking signals.

An intensified solid-state imaging sensor includes a photo cathode for converting light from an image into electrons, an electron multiplying device for receiving electrons from the photo cathode, and a solid-state image sensor including a plurality of pixels for receiving the electrons from the electron multiplying device through a plurality of channels of the electron multiplying device. The solid-state image sensor generates an intensified image signal from the electrons received from the electron multiplying device. The plurality of channels are arranged in a plurality of channel patterns, and the plurality of pixels are arranged in a plurality of pixel patterns. Each of the plurality of channel patterns is mapped to a respective one of the plurality of pixel patterns such that electron signals from each of the plurality of channel patterns is substantially received by the single respective one of the plurality of pixel patterns.

Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.