276 results about "Electron gun" patented technology

Provided is a pattern inspection system, including a scanning electron microscope (SEM) including an electron gun configured to generate a first electron beam and emit the generated first electron beam toward a first wafer, a detector configured to detect electrons emitted from the first wafer based on the first electron beam emitted toward the first wafer, and at least one processor configured to generate a first SEM image including a plurality of pixels based on the detected electrons, and determine, based on a period of a pattern extracted from the first SEM image, a pixel size of a second SEM image to be generated by the SEM with respect to a second wafer.

The invention discloses an evaporation process multi-parameter trend analysis and anomaly recognition method and system, and the system comprises a process data collection and preprocessing module, a process modeling and mode recognition module, and a closed-loop anomaly detection and response module. According to the system, a plurality of key parameters such as coating rate, heating power, film thickness, vacuum degree, electron gun current and temperature are collected in real time through a sensor array, data alignment and multi-dimensional feature vector construction are carried out based on a unified time reference, and a normal working condition parameter distribution model is established by adopting a clustering modeling method; multi-parameter coupling type anomaly detection and grading early warning and real-time recording of abnormal events and parameter states are achieved through a mahalanobis distance mode and the like, a historical report is generated for tracing and analysis, the anomaly recognition accuracy and response speed of the technological process are improved, and the system is suitable for evaporation equipment quality monitoring in the fields of semiconductors, optics, photovoltaics and the like.

The invention belongs to the technical field of vacuum coating, and relates to an electron gun and ion source collaborative evaporation coating method, a control method and a control system. The electronic gun and ion source collaborative evaporation coating control method comprises the steps that key parameters in the coating process are continuously collected, and an electronic gun beam initial value and an ion source gas flow initial value are dynamically generated according to state diagnosis results of all the parameters; the beam current value of the electron gun and the gas flow value of the ion source are corrected in real time to inhibit the disturbance of the ion source to the beam current of the electron gun, and the electron gun and the ion source are cooperatively regulated and controlled to ensure the precise control of the coating uniformity; the invention further discloses an electron gun and ion source collaborative evaporation coating method, local hot spot compensation and global uniformity compensation are carried out by adopting a film thickness compensation mechanism so as to accurately control the film thickness. According to the invention, the cooperative control of the electron gun evaporation and ion bombardment process is realized, the film adhesion is enhanced, the evaporation coating rate is improved, and the film thickness uniformity is improved.

Provided is a superconducting cryo module that can be made more compact. A superconducting cryo module according to the present disclosure comprises: a superconducting accelerating cavity that has a cell part accelerating electrons, a beam pipe part extending from the cell part to an electron incidence side, and an extraction part of the electrons which were accelerated by the cell part; and an electron gun that is located in the interior of the beam pipe part of the superconducting accelerating cavity, is located on the same axis as a beam axis BA of the superconducting accelerating cavity, and emits electrons into the cell part.

This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

The invention provides a planar distribution multi-beam electron gun, and relates to the technical field of microwave electric vacuum, and the planar distribution multi-beam electron gun comprises a housing; the cathode assembly is arranged in the shell, the cathode assembly comprises a cathode head, the surface of the cathode head is provided with a plurality of emitting surfaces which are arranged in a common plane in parallel at intervals, and the emitting surfaces are configured to escape electrons after being heated; the anode is arranged in the shell, and an electric field is formed between the anode and the emitting surfaces so as to accelerate escaped electrons, so that a plurality of electron beams are formed; the focusing electrode is arranged between the cathode head and the anode, an opening is formed in the focusing electrode, a plurality of grid wires are arranged on the opening, a grid gap between every two adjacent grid wires is aligned with the multiple emission surfaces in the emission direction of the electron beams, and the multiple grid wires are constructed to control beam diameters and divergence angles of the multiple electron beams; each electron beam passes through the gate slot aligned with the emission surface on which the electron beam is formed and enters the anode.

The present invention provides a multi-directional connection hub including a plurality of openings to which an anode adapter made of a metal material is connected through an insulation tube and an electron gun which emits electrons to the anode adapter to generate X-rays is connected, wherein the openings include a plurality of side openings to which the electron gun is connected and an upper opening through which the X-rays generated by the electrons, which are provided from the electron gun through the side opening and collide with the anode adapter, are emitted, and an emission direction of the X-rays is changed toward another side opening of the plurality of side openings or the upper opening according to a type of the anode adapter and a type or installation location of the electron gun.

The utility model belongs to the field of additive manufacturing technology discloses an additive manufacturing equipment. The additive manufacturing equipment includes support frame, vacuum chamber and electron gun subassembly. Vacuum chamber and support frame are independently arranged; Electron gun subassembly includes flexible connection module and electron gun of detachable support frame, and the emission end of electron gun is connected with one end of flexible connection module, and the other end of flexible connection module is connected with vacuum chamber, and the electron beam of electron gun emission can enter vacuum chamber through flexible connection module, and flexible connection module is used for preventing the deformation transmission of vacuum chamber to electron gun. Through the utility model, the position precision of electron gun can be avoided to be influenced by the thermal deformation of vacuum chamber, so as to improve the precision of printing and improve the printing quality.

The invention relates to the technical field of electronic scanning imaging, in particular to a scanning electron microscope and an electron optical structure thereof. According to the scheme, the anode of the electron gun is arranged behind the focusing lens and in front of the scanning coil, and the acceleration structure is arranged between the cathode and the anode, so that the acceleration structure is connected with the power supply during application, the acceleration structure is used as the acceleration electrode, and electrons can be accelerated between the cathode and the acceleration electrode after being emitted from the cathode, so that the acceleration effect is improved. The electron optical structure is arranged between the accelerating electrode and the anode, the electron decelerates between the accelerating electrode and the anode, high energy is kept in the accelerating structure, it is guaranteed that electrons are kept at a high speed in the propagation process, and unexpected deflection of the electrons in the electron optical structure is reduced; therefore, the electron beam falling on the surface of the sample has relatively low energy, so that the anti-interference performance of the electron beam in the propagation process can be ensured, and the low-voltage imaging of the electron beam on the surface of the sample can also be ensured.

The invention discloses an automatic process control method and an automatic process control system for an evaporator, which are suitable for a thin film deposition process under various materials and multi-process conditions. The system comprises a process initialization module, a coating control execution module and a post-processing and data feedback module. The process initialization module is used for parameter configuration, environment preparation and starting condition confirmation before an evaporation task is completed, and it is ensured that the system has basic operation conditions for entering a coating stage; the coating control execution module is used for completing electronic gun power control, plating pot rotating speed adjustment, film thickness real-time detection and thickness closed-loop adjustment in the evaporation process, and dynamic accurate control over the coating thickness is achieved; the post-processing and data feedback module is used for automatically turning off an electronic gun, cooling a substrate, breaking vacuum of a cavity, recording process data and updating control parameters after the coating task is finished, so as to ensure the safe shutdown of equipment and the continuous optimization capability of the system; the system can automatically complete preparation before evaporation, coating execution and post-treatment operation.

The present application relates to the technical field of electron-optical imaging, and particularly relates to a backscattered electron scintillator detector device and a detection method, which comprises a backscattered electron receiving sensor, an optical condensing group, an optical transmission group, a photoelectric conversion system and a detector protection mechanism. By using a scintillator as a sensor, a backscattered electron signal generated by an industrial electron gun electron beam is received, and then the electronic information carried by the backscattered electron is converted into an optical signal and transmitted to an area far away from the workpiece. Finally, a high signal-to-noise ratio voltage analog signal is formed by the photoelectric conversion system, avoiding the influence of spatial noise and other interference signals on weak signal transmission in the existing analog signal transmission process. For detailed topographic features, a backscattered electron image with high resolution can be displayed.

The electron source is provided with: an electron emission unit containing an alloy of iridium and a rare earth element; a support part made of metal; and a joining part that joins the electron emission part and the support part. The bonding portion has a coating layer containing iridium and the metal in the support portion, and the coating layer contains iridium and the metal in the support portion.

The invention discloses a low-temperature vacuum annular electron accelerator arc reactor, which relates to the field of electromagnetism and is applied to the technology and concept of energy generation, conversion and transmission. The device is composed of a high-voltage electron gun module (1), a low-temperature vacuum annular pipe module (2), a sealing module (3), an accelerating electric field module (4), a magnet guiding module (5), a magnetic core module (6), an induction coil output module (7) and a base module (8). According to the technology and the concept, a low-temperature vacuum annular electron accelerator is used for replacing a primary coil winding of a traditional transformer, that is, the same electric field is used for circularly accelerating electrons emitted into an annular vacuum tube by an electron gun to form annular electron flow to replace the primary coil winding of the traditional transformer. When the high-speed circling electrons lose to accelerate the action of an electric field, due to the mass inertia effect of the high-speed electrons, the annular current cannot disappear immediately under the guidance of the magnetic lines of force of the fixed magnet, the magnetic flux of the magnetic core still changes, and therefore the secondary coil can still obtain corresponding arc discharge. Therefore, the inductive discharge of the secondary coil can reversely act on the energy conversion of the accelerating electric field or the electron gun, so that the energy conversion efficiency is improved, and the energy loss is reduced.

The utility model discloses a kind of cathode heater subassemblies for klystron electron gun, it is characterized in that, including: cathode base, heater sleeve, heater and detachable heat shield assembly, the upper and lower two end surfaces of cathode base are respectively provided with emitting surface and mounting groove, heater sleeve is detachably fixed in mounting groove, and the end surface of heater sleeve back to cathode base is equipped with accommodating groove;Heater is installed in accommodating groove, and the part of heater in accommodating groove is wrapped with insulating layer;Heat shield assembly includes outer heat shield and inner heat shield, outer heat shield is sleeved in cathode base, and inner heat shield is installed in outer heat shield and covers heater sleeve and heater.The utility model can realize reversibility dismounting and maintenance, and heater material volatilization can be avoided directly deposited on the emitting surface of cathode base, help to maintain the emitting surface cleanliness of cathode base, to improve electron emission efficiency, high-temperature solder can also be reduced in use, reduce cost.

Disclosed is an electron microscope system including a light generator including a modulator that modulates excitation light based on a control signal, an electron gun including a photocathode that generates an emission current as the modulated excitation light is radiated on the photocathode, wherein an amount of the generated emission current depends on the modulated excitation light, a sensor circuit that senses the emission current as the emission current is generated, and a control unit that generates the control signal based on an amount of a reference current and an amount of the sensed emission current.

To stably form an insulating film of high quality in a reactive ion plating apparatus and method.SOLUTION: In the reactive ion plating apparatus 10, an evaporation material 24 stored in a crucible 20 is heated and evaporated by an electron gun 22. In addition, the ionization power Wd is supplied to the crucible 20 as an anode and the hot cathode filament 34 that emits thermoelectrons as a cathode. Accordingly, the plasma 100 is induced. Further, the reactive gas is introduced into the vacuum chamber 12 through the hollow anode 46, and the hollow anode power Wh is supplied to the hollow anode 46. Accordingly, the hollow anode plasma 200 is induced. A hollow anode filament 48 is provided at a gas discharge port of the hollow anode 46. The hollow anode filament 48 becomes a stable anode by being heated by Joule heat.SELECTED DRAWING: Figure 1

The invention discloses a multi-wavelength light-induced photoelectron charge compensation device and method for SIMS analysis, and the device comprises an adjustable wavelength light source which is used for generating light of which the wavelength is adjustable in a range from ultraviolet to visible light; the optical system is used for guiding the light generated by the adjustable wavelength light source to the surface of a sample bombarded by an SIMS primary ion beam, and ensuring that a photon beam spot is accurately overlapped with an ion beam bombarded area; and the control unit is used for dynamically adjusting the wavelength and the light intensity of the adjustable wavelength light source according to the stability of the SIMS secondary ion signal so as to optimize photoelectron emission and realize charge neutralization. The invention has the following beneficial effects: the technical scheme avoids physical damage of the electron gun to the sample and damage to the vacuum environment; the wavelength can be adjusted to cover ultraviolet light to visible light, and the device is suitable for various materials.

A kind of plating experiment device and method for preparing high bonding force copper plating layer on aluminum-based heat sink surface, it relates to material processing technical field.Plasma chamber is provided with heater, motion control mechanism can carry out public self-rotating compound motion and is connected bias power supply, evaporation source includes crucible, electron gun, deflection coil and ion source, so that the inside of plasmaplasma chamber forms pure strong current ion flushing area and strong current ion enhanced electron beam evaporation plating area, vacuum and gas supply system connects plasmaplasma chamber and carries out vacuumizing, and respectively with plasmaplasma chamber and ion source connection supply reaction gas and working gas.By the spatial partition layout of plasmaplasma chamber cooperation motion control mechanism public self-rotating compound motion, workpiece is periodically alternated through two functional areas in film forming process, utilizes the ion beam mixing effect of high-energy ion to realize film densification and eliminate interface stress, ensure the bonding force and reliability of the deposited copper plating layer, multiple workpieces can be simultaneously loaded to improve production efficiency.

The application discloses a kind of for gyro device coil magnet and electron gun collaborative optimization design method, belong to microwave millimeter wave technical field.The application first establishes the mapping relationship between multi-coil configuration parameter and three-dimensional magnetic field distribution;Then establish the potential distribution in the two-dimensional plane of electron gun, solve electron beam trajectory under given magnetic field distribution;Establish the mapping relationship between electron gun electrode structure parameter and electron beam performance parameter;Again establish the mapping relationship between electron gun performance parameter and electron gun electrode shape and solenoid configuration parameter;Finally, establish the fitness function of evaluating electron beam quality, introduce global optimization algorithm to realize the optimization design of electron gun performance.The application has high design freedom, high universality, can realize high-performance comprehensive design, and also has the advantages of fast calculation speed, high precision, good numerical calculation stability.

The application discloses a preset time control multi-electron gun cooperative scanning optimization method and system, relates to the technical field of industrial process control and optimization, and comprises the following steps: S1, a dynamic coupling model is constructed, and multi-electron gun system parameters and a communication topology are initialized; S2, a leadership comprehensive score is dynamically calculated, and a main leader and an auxiliary leader are elected; S3, the main leader solves a local constraint optimization problem, and a global energy reference trajectory is generated; S4, each electron gun independently generates a control instruction through a respective preset time distributed optimal controller based on the global energy reference trajectory, and converges a tracking error; S5, the control instruction of each electron gun is subjected to constraint processing, and is executed; and S6, system performance is monitored, and adaptive adjustment is performed; the preset time control multi-electron gun cooperative scanning optimization method and system provided by the application solve the problems of serious interference between electron guns and poor anti-disturbance robustness in the prior art.

The utility model relates to the technical field of glass coating, and discloses a metal film coating system for a glass workpiece, which comprises a controller and a coating mechanism positioned in a vacuum chamber, the coating mechanism comprises a glass workpiece placing rack, an electronic gun and a crucible; a plurality of through holes are formed in the glass workpiece placing rack, and glass workpieces are correspondingly erected in the through holes respectively; the electron gun and the crucible are respectively positioned below the glass workpiece placing rack, and the crucible is filled with a plurality of metal particles; according to the metal film thickness control system, accurate control over the thickness of a metal film can be achieved by accurately controlling emission of the electron gun and energy of electron beams, a plurality of through holes are formed in the glass workpiece containing frame, and therefore the metal film thickness can be accurately controlled through the through holes, and the metal film thickness can be accurately controlled. A plurality of glass workpieces can be erected at the same time for coating, and the crucible is placed below the glass workpiece placing frame, so that the coating uniformity of the glass workpieces is ensured.

A radiotherapy device (100, 320) and a magnetic resonance guided radiotherapy system (300, 400, 500, 600, 700). The radiotherapy device (100, 320) can include an electron gun (110) and a curved beam current deflection unit (120, 409, 509, 609, 709). The beam current deflection unit (120, 409, 509, 609, 709) is configured to accelerate an electron beam output by the electron gun (110) over a range of magnetic field strengths (B0). The magnetic resonance guided radiotherapy system (300, 400, 500, 600, 700) can include the radiotherapy device (100, 320) and a magnetic resonance imaging device (310).

To provide an electron gun device for vapor deposition that suppresses deterioration of film formation quality. [Solution] The electron gun device for vapor deposition disclosed herein comprises an apparatus main body equipped with an electron beam source and installed to the side of a crucible that is open at the top and contains an evaporation material to be vapor-deposited on a coating member, and a pair of pole pieces that guide the electron beam emitted from the apparatus main body to a target area set in the crucible, wherein the pair of pole pieces include a base end installed on the apparatus main body, a tip end disposed above the crucible and behind the target area as seen from the apparatus main body, a first connecting portion extending from the base end toward the tip end, and a second connecting portion connecting the end of the first connecting portion to the tip end and extending in a second direction that intersects with a first direction along a straight line connecting the apparatus main body and the target area, wherein the length of the second connecting portion in the first direction is longer than the length of the tip end in the first direction.

Examples include a photoelectric film that emits electrons by irradiation of an excitation light, an extraction electrode for extracting emitted electrons, and a differential exhaust diaphragm through which extracted electrons pass. A control unit controls an electric field formed in relation to the extraction electrode to make the extracted electrons pass through the differential exhaust diaphragm both in a first case in which the excitation light is irradiated to a first position of the photoelectric film, and in a second case in which the excitation light is irradiated to a second position different from the first position of the photoelectric film.

The evaporation power regulation and control device comprises a driving electron gun, a temperature sensing assembly, a state calculation assembly and a power control assembly. The driving electron gun is arranged in the evaporation cavity and located on one side of the metal source. The temperature sensing assembly is arranged in the evaporation cavity and located on the inclined upper portion and / or the inclined lower portion of the metal source. The state calculation assembly is in communication connection with the temperature sensing assembly. The power control assembly is in communication connection with the state calculation assembly and the driving electron gun. According to the evaporation power regulation and control method, the evaporation power regulation and control device is used, and firstly, the surface temperature of the metal source is monitored in real time through the temperature sensing assembly. And then according to the monitored surface temperature, the real-time melting state of the metal source is calculated, and the real-time melting state at least comprises the melting area position and the melting area proportion. And finally, based on the calculated real-time melting state, the melting power for driving the electron gun is adjusted in real time. According to the evaporation power regulation and control device, method and system, through accurate temperature monitoring, real-time molten state calculation and dynamic power regulation, the stability of the evaporation process and the film quality are remarkably improved.

The invention provides a wafer height adjusting method of a wafer detection device and a related product. The wafer detection device comprises a workbench, an electronic gun and a capacitance sensor, the relative position of the capacitance sensor and the electronic gun is kept unchanged, the workbench is configured to support and move a wafer, and the capacitance sensor is used for measuring and obtaining the distance between the capacitance sensor and the upper surface of the wafer. The height adjusting method comprises the following steps: confirming that the projection of the capacitive sensor on the plane where the upper surface of the wafer is located is within the range of the wafer; controlling the capacitive sensor to measure the distance; determining a height adjustment value of the wafer according to a measurement result; and adjusting the height of the wafer according to the height adjustment value. According to the invention, the complexity and cost of the wafer detection device can be effectively reduced while the high focusing precision is ensured.

The invention provides a method, a device and equipment for realizing miniaturization of an electronic optical system of a klystron, which can be applied to the technical field of vacuum electronic devices. The method for realizing miniaturization of the electron optical system of the klystron comprises the following steps: acquiring a first target parameter of an electron gun and an initial permanent magnet focusing system; according to the first magnetic induction intensity, the magnetic induction intensity area range of the initial permanent magnet focusing system is adjusted, and a first magnetic induction intensity curve is obtained; adjusting the initial structure parameters by simulating a working state of embedding an electron gun corresponding to the initial structure parameters into the middle permanent magnet focusing system to obtain a second magnetic induction intensity curve; and embedding the electron gun corresponding to the target structure parameter corresponding to the second magnetic induction intensity curve into the target permanent magnet focusing system to obtain the electron optical system of the target speed regulation tube.

The invention relates to the field of electronic optical automatic design, in particular to a spline and topological optimization-based rapid design method for an axisymmetric electron gun. The design space of the axisymmetric electron gun is divided into a cathode region, an anode region, a focusing electrode region and a spacer region, the anode region and the focusing electrode region are uniformly divided into a plurality of rectangular pixel blocks by using a pixel division method, the anode region and the focusing electrode region are divided by using a cathode estimation method, scattered pixel points are randomly generated in the regions, and the pixel points are distributed in the regions. Connecting the scattering points through an NURBS spline, searching a pixel block through which a spline curve passes, extracting the outer contour of the pixel block, generating continuous and non-hollow electrodes, and combining the continuous and non-hollow electrodes into a complete electron gun; and the shape and voltage of the electrode are optimized by using an optimization algorithm, and finally, the electron gun meeting the design requirements is obtained. The problem of topological optimization design of an existing electronic gun is solved, the limitation of the problems of model defects and the like of an existing electronic gun design method is broken through, and automatic design of the electronic gun is achieved.

This invention discloses a miniaturized high-repetition-rate pulsed photocathode electron gun, comprising a laser, a shaping optical path, and a photocathode electron gun arranged sequentially. The photocathode electron gun includes a front electrode and a quaternary electronic lens group. The laser serves as the light source for the shaping optical path, which precisely and stably transmits the laser beam to the photocathode surface. The cathode of the front electrode of the photocathode electron gun generates photoelectrons, and the front electrode controls the intensity of the emitted electron beam. The quaternary electronic lens group of the photocathode electron gun adjusts the uniformity of the emitted electron beam. This invention achieves high-quality electron beams while possessing advantages such as compact structure and miniaturization.

The utility model provides an on-chip electron source, an on-chip electron gun and a vacuum electronic device, the on-chip electron source comprises a substrate, and one side of the substrate is provided with a concave part; the metal electron emission structure is formed on the side, provided with the concave part, of the substrate, the two ends of the metal electron emission structure are erected on the substrate, and the middle part of the metal electron emission structure is suspended between the concave part and the substrate; wherein one surface, which emits electrons outwards, of the metal electron emission structure is a curved surface, so that the emitted electrons are focused to form electron beams. The device provided by the utility model not only has strong heating power and electron beam convergence effect, but also can realize batch preparation.