167 results about "Secondary electrons" patented technology

This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

Provides is an ultra-microlight transmission device using secondary electrons according to various embodiments of the present invention for implementing the above-objects. The ultra-microlight transmission device includes a light source module configured to generate light, a housing which includes an interior space and performs spectroscopy and diffuse reflection on light introduced into the interior space, a first filter unit configured to convert the spectroscopic and diffusely reflected light into monochromatic light, and a second filter unit configured to cause diffraction and interference for the converted light.

Provided are: a hydrogen separation filter which has a high hydrogen permeation rate and which prevents or reduces separation between layers; and a method for producing the hydrogen separation filter. The hydrogen separation filter includes a porous substrate and a palladium layer provided on the porous substrate. The grain boundary number density observed in a cross-sectional secondary electron image of the palladium layer is 1-5 grains / [mu] m. A method for manufacturing a hydrogen separation filter includes forming a palladium layer on a porous base material by a sputtering method while keeping the temperature of the porous base material at 300-600 DEG C.

The invention relates to the technical field of high-current particle beam diagnosis, in particular to a high-energy ion beam three-dimensional reconstruction method and system based on secondary electron emission signals. According to the technical scheme, the method comprises the steps of data preprocessing and conversion, geometric space up-sampling, point assignment generation and model boundary division and output. According to the method, the spatial sparsity of original data is overcome through geometric upsampling, the fidelity of physical attribute reconstruction is remarkably improved by utilizing a topological structure based on a minimum spanning tree and a primary function frequency superposition model, automatic and accurate division of beam boundaries is realized according to a physical threshold value, an end-to-end automatic processing flow is formed, and the method has the advantages that the method is simple and convenient to operate and high in practicability. And outputting a visual three-dimensional model supporting interactive analysis, systematically solving the problems of data sparsity, interpolation distortion and boundary fuzziness in the prior art, and realizing high-precision and high-efficiency reconstruction and visual analysis of the three-dimensional form of the high-energy ion beam.

The application provides an X-ray communication device and method based on a laser-driven matrix photocathode. The device is applied to the technical field of X-ray tubes and comprises a laser control circuit, a matrix transmission photocathode array, a collimating microchannel plate, a matrix transmission anode target array, a vacuum tube shell and a beryllium window. The method comprises: generating a dynamic pattern, loading data information to be input into an optical signal; and exciting photoelectron emission with spatial resolution characteristics at a corresponding photocathode pixel area; each channel cluster is aligned with a single photocathode pixel at the front end; after the electrons enter the microchannel, continuous secondary electron emission occurs under the action of the electric field on the inner wall of the channel, and an avalanche effect is generated; and through mechanisms such as bremsstrahlung radiation, a bundle of microfocus X-rays is generated at each target point. In this way, the technical problems of the X-ray source in the prior art, such as the limitation in spatial coding capability, response speed, integration degree and communication dimension, can be solved.

The invention provides an X-ray communication device and method based on a laser driving matrix type photocathode. The device is applied to the technical field of X-ray tubes and comprises a laser control circuit, a matrix transmission type photocathode array, a collimation type structure micro-channel plate, a matrix transmission type anode target array, a vacuum tube shell and a beryllium window. The method comprises the following steps: generating a dynamic pattern, and loading data information to be input into an optical signal; photoelectron emission with spatial resolution characteristics is excited in a corresponding photocathode pixel area; each channel cluster is aligned with a single photocathode pixel at the front end; after the electrons enter the micro-channel, continuous secondary electron emission occurs under the action of an electric field on the inner wall of the channel, and an avalanche effect is generated; a beam of micro-focus X-rays is generated at each target spot through mechanisms such as tough-induced radiation. In this way, the technical problem that in the prior art, an X-ray source is limited in space coding capacity, response speed, integration degree and communication dimension can be solved.

The application discloses a mass spectrometer for measuring a low-isotope-content sample and belongs to the technical field of mass spectrometers. The mass spectrometer comprises a receiving device and a signal processing unit. The receiving device comprises a vacuum cavity, a metal target, a vacuum plastic flash body, a high-voltage electrode plate, a vacuum glass window, a photomultiplier tube and a photomultiplier tube cover. The signal processing unit comprises a high-voltage stabilizer and a pulse amplifier. The application converts ions into secondary electrons through the metal target, provides voltage for the metal target and the high-voltage electrode plate by the high-voltage stabilizer to form a high-intensity electric field, accelerates the secondary electrons to bombard the vacuum plastic flash body to generate an optical signal, receives and converts the optical signal into a pulse signal by the photomultiplier tube through the vacuum glass window, and finally performs shaping, amplification and conversion processing on the pulse signal by the pulse amplifier. The application does not need to rely on imported super-high resistance resistors, realizes the localization of the receiving device of the mass spectrometer, and has the advantages of high signal conversion efficiency, strong anti-interference capability, stable and reliable measurement and the like.

A plasma processing method disclosed in the present invention includes a step of generating plasma in a chamber of a plasma processing apparatus by supplying high-frequency power from a high-frequency power source during a first period. The plasma processing method further includes a step of stopping the supply of the high-frequency power from the high-frequency power source during a second period following the first period. The plasma processing method further includes a step of applying a DC voltage having a negative polarity from the bias power source to the substrate support during a third period following the second period. In the third period, the high-frequency power is not supplied. In the third period, the negative-polarity direct-current voltage is set so that ions are generated in the chamber by means of secondary electrons that are released by causing the ions in the chamber to collide with the substrate.

The invention relates to a flat plate ionization chamber capable of measuring beta, X and gamma rays and a use method thereof, one side of an ionization chamber main body is provided with an incident window film, the incident window film side is provided with a balance cover, the balance cover is provided with a vent hole, and the vent hole is arranged on a circular plane of the balance cover; the spring needle is arranged in the ionization chamber main body and is in contact connection with the incident window film; the spring needle stud is located at the rear end of the spring needle, abuts against the rear wall of the ionization chamber body and is used for abutting against the spring needle to make continuous contact with the incidence window film. And the high-voltage conductive column is connected with the spring needle, is connected with an external power supply and is used for applying voltage to the incident window film through the spring needle. The balance cover is arranged in front of the ionization chamber main body, the balance cover provides a secondary electron balance condition for the ionization chamber to measure the strong penetrating radiation, the strong penetrating radiation can be measured by the ionization chamber, on the contrary, when the balance cover is removed, the weak penetrating radiation can be measured by the ionization chamber, and the strong penetrating radiation and the weak penetrating radiation can be measured by one ionization chamber. And the effect of weak through radiation can also be measured.

The invention discloses a silicon-based micro-channel plate (MCP) structure and a manufacturing method thereof, relates to the technical field of semiconductor device manufacturing, and aims to solve the problems of poor high temperature resistance, insufficient etching precision, film layer quality defect and process synergy deficiency of a traditional glass-based / organic-based MCP. An 8-inch N-type monocrystalline silicon wafer is adopted in the structure, the thickness of the N-type monocrystalline silicon wafer is (250-350) + / -25 microns, micropores of 3-10 microns are evenly distributed, the hole pitch is 7-22 microns, the inclination angle is 6-12 degrees, the side wall roughness is smaller than or equal to 50 nm, the perpendicularity deviation is smaller than or equal to + / -0.5 degrees, an AlO or AlO / HfO / AlO electron multiplication layer with the thickness of 10-30 nm is prepared on the inner wall of a channel through ALD, and a Cr / Ni electrode with the thickness of 50-80 nm is plated on the surface. According to the method, the OES is used for monitoring SiFs in real time. According to the invention, the double targets of < = 30% of 1kg impact fracture rate and stable electron multiplication gain are achieved, the tolerable temperature reaches 800 DEG C, the secondary electron emission efficiency is improved by 25%, the production efficiency is improved by 20%, the cost is reduced by 15%, and the method is suitable for the high-sensitivity detection fields of night vision imaging, particle detection and the like.

The application provides a method for measuring the white edge width of a photomask, comprising: providing a photomask, obtaining a secondary electron signal curve of a pattern in the photomask; obtaining a mutation point of the secondary electron signal curve, wherein the mutation point comprises a white edge starting point and a white edge ending point; setting a first threshold range and a second threshold range according to the white edge starting point and the white edge ending point, and obtaining a first characteristic peak width corresponding to the secondary electron signal curve according to a plurality of first thresholds, and obtaining a second characteristic peak width corresponding to the secondary electron signal curve according to a plurality of second thresholds; obtaining an optimal threshold combination in a plurality of threshold combinations, and obtaining a material coefficient of the photomask; and obtaining the white edge width of the pattern in the photomask; the application realizes the measurement of the white edge width of the photomask, can improve the accuracy of the measurement, and makes the measurement result adapt to different photomask materials in combination with the material coefficient.

The invention discloses an electron detection device and a scanning electron microscope, and relates to the technical field of scanning electron microscopes. The device comprises an objective lens, the objective lens comprises a first coil used for forming a magnetic lens and a second coil used for forming an immersion magnetic field, the first coil and the second coil are wrapped by a first pole shoe and a second pole shoe respectively in a non-closed mode, the first pole shoe is provided with an axial channel part, the second pole shoe is provided with a conical extension part, and a diaphragm hole is formed in the bottom of the conical extension part; the detector is arranged on the axial channel part or the conical extension part and is positioned above the diaphragm hole; and the first control electrode is arranged at the inner side of the diaphragm hole and is used for generating an electric field so as to cooperate with the immersion magnetic field generated by the second coil to guide or prevent the secondary electrons from reaching the detector. According to the electron detection device, through the arrangement of the first control electrode, secondary electrons can be guided to the detector, so that the collection efficiency of the secondary electrons can be improved, the secondary electrons can be prevented from reaching the detector, and the detector can conveniently collect backscattered electrons.

An electrostatic chuck assembly is provided that is less prone to spatial discharge within a gas passage plug. This electrostatic chuck assembly comprises a ceramic plate having an upper surface on which a wafer is placed and a lower surface opposite to the upper surface, and incorporating internal electrodes which are ESC electrodes and / or RF electrodes; a cooling plate attached to the lower surface of the ceramic plate; a plug placement hole penetrating the ceramic plate from the lower surface to the upper surface; a gas passage plug provided to close the plug placement hole and configured to allow gas to pass through its interior; and a gas introduction passage provided in the cooling plate and communicating with the plug placement hole. At least a portion of the gas-contactable surface within the gas passage plug is made of a low SEEC material having a secondary electron emission coefficient (SEEC) of 5.0 or less.

A method of checking calibration of a dual-mode secondary electron multiplier (SEM) detector of a mass spectrometer using non-analyte ions, the method comprising: recording, using a counting mode dete

A system includes an electron source that generates an electron beam, a stage that holds a workpiece in a path of the electron beam, a magnetic objective lens disposed in a path of the electron beam, a focus element disposed in the path of the electron beam between the magnetic objective lens and the stage, and a backscattered electron detector disposed in the path of the electron beam between the focus element and the magnetic objective lens. Backscattered electrons, secondary electrons, and x-rays are emitted from the workpiece. The backscattered electrons are measured with the backscattered electron detector.

The invention relates to a method for preparing an electron transport layer in a perovskite battery through magnetron sputtering and the perovskite battery, the magnetron sputtering is carried out by adopting the method provided by the invention, secondary electrons generated by target materials serving as cathodes are interacted by an electric field and a magnetic field, and then are effectively controlled in a space defined by at least two target materials, so that the electron transport layer in the perovskite battery is prepared. Columnar plasmas are formed, the collision ionization probability between electrons and reaction gas is further increased, the ionization degree of the reaction gas is effectively improved, and the deposition rate of the electron transport layer on the surface of the perovskite layer is increased. Besides, the plasma formed by the secondary electrons is bound in the space enclosed by the at least two target materials, so that the bombardment effect of the electrons with relatively high kinetic energy on the substrate can be avoided, the damage to the substrate is further effectively reduced, meanwhile, the temperature rise of the perovskite layer in the magnetron sputtering process is also inhibited, and the cycling stability of the perovskite battery is ensured.

The application discloses a kind of compact structure, high time resolution microchannel plate assembly, it can be applied to analytical instrument such as mass spectrometry detection field.The microchannel plate assembly includes: output electrode column, fixed screw, insulating substrate, anode cover plate, anode plate, output electrode plate, microchannel plate, metal shielding base, positioning sleeve, wherein, output electrode plate and output electrode column are connected to each other and constitute the output electrode of microchannel plate;Anode plate is connected to each other by plane anode pattern and conical receiving terminal and constitutes;Microchannel plate input surface is plated with high secondary electron emission film, to realize the high detection efficiency of microchannel plate assembly.Insulating substrate, anode cover plate, anode plate, output electrode plate, microchannel plate and metal shielding base are fixed by fixed screw and become integrated form, with compact structure, high time resolution characteristics.

This invention relates to the field of biomedical technology. The invention discloses a method for preparing nanomaterials that can improve the radiosensitivity of tumors and their applications, comprising: S1: dissolving tungsten and copper compounds in an organic solvent in a specific ratio to prepare a mixed solution; S2: transferring the solution to a reaction vessel, adding a surfactant or polymer, and reacting at a certain temperature to form rod-shaped initial nanomaterials; S3: cooling to room temperature, centrifuging and washing to obtain a moist material; S4: drying to obtain Cu-W. 18 O 49 Nanomaterials. The Cu-W of this invention 18 O 49 Nanomaterials can be injected intravenously or intratumorally to target tumors via the EPR effect. When combined with near-infrared light and X-ray therapy, the photothermal effect raises the temperature, improves hypoxia, and enhances the killing effect of radiotherapy. It is suitable for triple-negative breast cancer, etc., inhibiting tumors through the secondary electrons of tungsten, the Fenton reaction of copper ions, and the photothermal effect. It can be monitored by CT or photoacoustic imaging, and can activate the immune response when used in combination with immune checkpoint inhibitors.

The application relates to an ultrafast electron microscopy imaging device and an imaging method thereof, in particular to a multi-mode multi-dimensional ultrafast electron microscopy imaging device and an imaging method thereof, and solves the problem that the existing electron microscopy imaging technical scheme cannot simultaneously meet the requirements of high time-space-energy-momentum resolution and material diversification measurement. The device comprises a sample cabin, an electron gun, a laser generation module, a secondary electron detector, a STEM detector, an in-cabin plug-in detection assembly, a plug-in camera arranged below the sample cabin, an energy filtering electron microscopy assembly, and a vacuum system; a hollow sample table is arranged in the sample cabin; at least two ultrafast pumping laser introduction windows are arranged on the cabin wall; an ultrafast detection laser introduction window is arranged on the electron gun shell; the secondary electron detector is arranged obliquely above the sample table; the STEM detector is installed on the side cabin wall of the sample cabin and located below the sample table; and the in-cabin plug-in detection assembly is arranged below the STEM detector.

The application discloses a high-order mode coupler based on a double-inhibition structure of a transmission line model and a design method, and belongs to the accelerator physics and superconducting high-frequency technical field.The method comprises the following steps: determining a superconducting cavity base mode frequency, a high-order mode frequency band and an external quality factor Qe requirement; establishing an equivalent transmission line model comprising two parallel resonance base mode inhibition structures; optimizing a transmission curve through a normalized scattering matrix theory; converting the optimized transmission line model into a three-dimensional structure and further optimizing; modeling and calculating the external quality factor Qe in combination with the superconducting cavity; performing secondary electron multiplication effect simulation analysis; performing thermal load analysis by using an iterative process; and finally completing mechanical design.The application adopts the double-inhibition structure, greatly improves the base mode inhibition bandwidth, realizes deep inhibition of the base mode without pre-tuning, significantly reduces the superconducting module integration cost, improves the assembly efficiency and reduces the operation risk.

The application provides an EUV photoresist topography and roughness control method and device based on automatic parameter optimization, related products, and relates to extreme ultraviolet lithography technology and semiconductor manufacturing field. The method comprises constructing a random exposure model, simulating secondary electron random walk and scattering effect, and establishing a near neighbor condensation crosslinking mechanism based on lattice topological constraints; a discrete random development model is constructed based on the Gillese ratio algorithm, and the competitive reaction between the developing solution and the metal oxide core is simulated; the quantum yield, the electron blur length, and the number of development critical sites are used as optimization variables, a fitness function is constructed based on the three-dimensional topographic feature parameters of the photoresist, and the target parameter combination is calculated and output by an optimization algorithm. The application can realize fine control of photoresist topography and effective suppression of roughness, and improve the process window and manufacturing yield of extreme ultraviolet lithography.

The invention discloses an imaging system of a feature size scanning electron microscope. The imaging system comprises an electron gun, an image generator, and an electron beam deflection assembly and a secondary electron detection assembly which are connected with the image generator, the electron gun is used for generating and emitting electron beams; the secondary electron detection assembly is used for collecting secondary electrons excited when the electron beam scans the surface of the to-be-detected sample, converting the secondary electrons into electronic signals and outputting the electronic signals to the image generator; the electron beam deflection assembly is used for receiving a deflection signal input by the image generator and deflecting the electron beam to adjust the scanning position of the electron beam; and the image generator is used for outputting a deflection signal to the electron beam deflection assembly so as to scan a target area, receiving an electronic signal input by the secondary electron detection assembly and generating a static image and a video. The method has the advantages that the static image of the to-be-detected sample target area can be generated, the dynamic video of the to-be-detected sample target area can also be generated, and the applicability is high.

A charged particle beam device includes a charged particle source that irradiates a sample with a charged particle beam, a detector that detects secondary electrons generated from the sample due to irradiation with the charged particle beam, a deflector that deflects the charged particle beam, and an image processing device that generates an image based on irradiation position information on the charged particle beam on the sample and detection intensity by the detector. The image processing device acquires images of the sample in different charging states of the sample, measures a feature of a feature shape that occurs at a boundary between regions of different materials in each of the acquired images, and estimates an electrical or material characteristic of the sample based on the feature.

This invention discloses a method for suppressing dielectric window breakdown under dual-frequency high-power microwaves, belonging to the field of high-power microwaves. The invention applies a deposition electric field E parallel to the dielectric window and simultaneously perpendicular to its surface on the vacuum side of the dielectric window. dc and high-power microwave electric field E rf The external magnetic field B satisfies the condition that the energy gained by electrons through cyclotron resonance is higher than the second crossover point of the secondary yield curve, thus lowering the upper and lower boundaries of the sensitivity curve. The lower upper boundary leads to the suppression of secondary electron multiplication; where Ω is the cyclotron frequency, and ω1 and ω2 represent the dual-frequency high-power microwave E. rf The angular frequencies of the two microwave components. Under a dual-frequency microwave electric field, when the applied magnetic field is parallel to the dielectric window and perpendicular to both E_dc and E_rf, the present invention can satisfy the upper boundary condition, achieving the effect of suppressing multiplication. Due to the mutual modulation of the applied magnetic field and the microwave electric field, as the field strength of the dual-frequency microwave electric field increases, the upper boundary of the sensitivity curve becomes relatively stable and lower, and multiplication is suppressed.

The application provides a method and system for measuring a secondary electron emission coefficient of a medium material, the method comprising the following steps: obtaining a total primary electron beam current, and cutting the total primary electron beam current to obtain a primary electron beam current; obtaining a beam cutting current and a sampling current, and calculating a ratio of the primary electron beam current to the beam cutting current; obtaining the beam cutting current and the sampling current of the medium material to be measured, and obtaining the secondary electron emission coefficient of the medium material to be measured under primary electron incidence energy; neutralizing accumulated charges on the surface of the medium material to be measured by using a first neutralizing electron gun and a second neutralizing electron gun; measuring the secondary electron emission coefficient under different primary electron incidence energies to obtain a secondary electron emission coefficient curve. The accumulated charges on the surface of the medium material to be measured are neutralized and removed by using the neutralizing electron gun, the problems that a long time is consumed in the previous medium material measurement process and the measurement of the secondary electron emission coefficient less than 1 cannot be realized are solved, and the complete curve of the secondary electron emission coefficient of the medium material is rapidly and accurately measured.

The application provides an electronic detector and an electronic detection system. The electronic detector comprises: a Faraday cage for collecting secondary electrons; an electron multiplier fixed to a shielding outer cylinder, for performing primary amplification of the secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier; a power supply ring connected to the input end of the electron multiplier and the output end of the electron multiplier respectively, for providing the first voltage to the input end of the electron multiplier and the second voltage to the output end of the electron multiplier; a semiconductor detector fixed to the shielding outer cylinder, for applying a third voltage and a bias voltage to the secondary electrons to convert the secondary electrons into a current signal after performing secondary amplification; an amplifier circuit connected to the semiconductor detector, for converting the current signal into a voltage signal; and a signal amplification processing circuit, for converting an image signal from the voltage signal after amplification, so that the electronic detection efficiency can be improved and the image signal-to-noise ratio can be enhanced.

The invention provides a microchannel plate for cathode electron self-focusing in a photocathode X-ray tube and a use method. A micro-channel plate is applied to the technical field of high-performance X-ray tubes, a substrate is a physical substrate of the micro-channel plate and is of a Fresnel lens structure, and the substrate is provided with a plane incident plane and a distorted surface output plane formed by concentric annular belts; a gradient aperture array is distributed on the substrate, and the gradient aperture array is arranged on the plane of the substrate; the radial gradient material is a surface functional coating of the inner wall of the micro-channel; the variable aperture channel is an inner wall surface three-dimensional contour of each independent micro-channel forming the gradient aperture array, and each independent micro-channel in the gradient aperture array is defined. Different secondary electron emission materials are coated on the surface of the inner wall of each micro-channel defined by the gradient aperture array in a partitioned manner along the radial direction. In this way, the problems that in the prior art, an X-ray tube is loose in structure and poor in performance can be solved.

The invention discloses a high-order mode coupler based on a transmission line model dual-suppression structure and a design method, and belongs to the technical field of accelerator physics and superconducting high frequency. The method comprises the following steps: determining the fundamental mode frequency, high-order mode frequency band and no-load quality factor Qe requirements of the superconducting cavity; establishing an equivalent transmission line model comprising two parallel resonant fundamental mode suppression structures; optimizing a transmission curve through a normalized scattering matrix theory; converting the optimized transmission line model into a three-dimensional structure and further optimizing the three-dimensional structure; carrying out overall modeling with the superconducting cavity to calculate a no-load quality factor Qe; secondary electron multiplication effect simulation analysis is carried out; carrying out thermal load analysis by adopting an iterative process; and finally, mechanical design is completed. The dual-suppression structure is adopted, the fundamental mode suppression bandwidth is greatly improved, deep suppression of a fundamental mode is achieved, pre-tuning is not needed, the integration cost of the superconducting module is remarkably reduced, the assembly efficiency is improved, and the operation risk is reduced.

The invention relates to a secondary electron detector for an atmospheric pressure electron microscope, characterized in that the secondary electrons generated by the irradiation of a high-energy electron beam on a sample are captured by a graphene ultra-thin film, wherein, by applying a voltage between the graphene ultra-thin film and the sample, air or injected ions between the graphene ultra-thin film and the sample are ionized and greatly amplified by an avalanche effect, and the ion current is displayed as an image on a monitor via an amplifier.

The application discloses a microstructure testing method for metal filaments, thin strips or platings, and applies to the technical field of material physical and chemical detection. The method uses an ion beam with a specific beam intensity after being focused by an electromagnetic lens and accelerated by a specific intensity electric field to continuously scan a sample testing surface at a specific scanning speed and scanning times. The ion beam has a stripping effect on atoms in the nanometer-thickness surface layer of the sample testing surface and excites a secondary electron signal. The principle of obtaining a contrast image containing crystal orientation information by using the characteristics that the stripping effect and the secondary electron signal excitation intensity are influenced by different crystal face orientations of polycrystalline metal materials is used to obtain the microstructure information of the sample testing surface. The microstructure information of the metal filaments, thin strips and platings which is difficult to obtain by traditional metallographic corrosion methods can be directly, quickly and accurately obtained, the detection difficulty of the microstructure of commonly used bonding wires, connecting pieces and platings in the microelectronic field is solved, and the blank of the testing method is filled.