341 results about "Secondary electrons" patented technology

The invention provides a material characterization image analysis system and an analysis method thereof. The invention discloses a material characterization image analysis system and an analysis method thereof, and the method comprises the following steps: S1, obtaining a back scattering electron image, a secondary electron image and energy spectrum data of a material through a scanning electron microscope, and dynamically adjusting the acceleration voltage, beam current and detector gain of the scanning electron microscope through a parameter optimization algorithm based on a preset material type and an observation target; s2, carrying out multi-scale feature enhancement preprocessing on the back scattering electron image and the secondary electron image, wherein the preprocessing comprises noise suppression, non-uniform illumination correction and micro-area texture enhancement; s3, pixel-level space registration is carried out on the back scattering electron image and the energy spectrum element distribution diagram, and a multi-modal fusion feature matrix is constructed. The material characterization image analysis system and the analysis method thereof provided by the invention have the advantages that the distortion problem can be well solved, the micro-structure identification accuracy can be improved, and the life prediction error can be reduced.

The invention discloses a high-power pulse magnetron cathode, and belongs to the technical field of magnetrons. The cathode comprises a heating substrate, an upper end cap, a lower end cap and a cathode emitter, the upper end of the heating substrate is connected with the upper end cap, and the lower end penetrates through the lower end cap and extends out of the magnetron tube core to be connected with a power supply; the heating substrate positioned between the upper and lower end caps is spiral-line-shaped; and the cylindrical cathode emitter is sleeved on the outer side of the spiral linear part of the heating substrate. The cathode emitter is heated through the heating substrate, so that the cathode emitter emits electrons, and the emitted electrons back bomb the surface of the cathode emitter under the action of an external electromagnetic field of the magnetron to generate new secondary electrons. According to the invention, the probability of electron bombardment on the surface of the cathode emitter can be greatly increased, that is, secondary emission electrons can be bombarded continuously, the overall electron emission density of the cathode is improved, and a high-power pulse magnetron is supported to provide higher power output.

The invention relates to an ultrafast electron microscopic imaging device and an imaging method thereof, in particular to a multi-mode multi-dimensional ultrafast electron microscopic imaging device and an imaging method thereof, and solves the problem that the existing electron microscopic imaging technical scheme is difficult to simultaneously meet the measurement requirements of high time-space-energy-momentum resolution and material diversification. The device comprises a sample cabin, an electron gun, a laser generation module, a secondary electron detector, an STEM detector, an in-cabin plug-in detection assembly, a plug-in camera and an energy filtering electron microscope assembly which are arranged below the sample cabin, and a vacuum system, a hollow sample table is arranged in the sample cabin, and at least two ultrafast pumping laser introduction windows are arranged on the cabin wall of the sample cabin; an ultrafast detection laser introduction window is arranged on the electronic gun shell; the secondary electron detector is arranged obliquely above the sample table; the STEM detector is arranged on the side cabin wall of the sample cabin and is positioned below the sample table; and the in-cabin plug-in detection assembly is arranged below the STEM detector.

The invention relates to the field of mass spectrum equipment, in particular to a low-noise and high-sensitivity mass spectrometer Faraday cup. The Faraday cup comprises a rectangular housing, one side of which is open; the suppression grid is arranged in the shell and is close to the opening; the collector is arranged in the shell and is adjacent to the suppression grid; a slit baffle is arranged at the opening of the shell; the collector is fixed through the insulating lining, insulated from the shell, and used for receiving the ion beam and generating current; the suppression grid electrode is fixed through an insulating lining and a metal positioning block, and negative bias voltage is applied to suppress escape of secondary electrons; the top cover is assembled on the shell to form a sealed whole; the collector connecting piece is arranged on the lower portion of the collector, one end of the Faraday cup outgoing line is welded to the collector connecting piece, and the other end of the Faraday cup outgoing line is led out of the shell. Noise is remarkably reduced, and the detection sensitivity of a mass spectrometer is improved.

This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

The utility model relates to the technical field of X-ray tubes, in particular to an X-ray tube with high-stability luminous flux, which comprises a tube shell, a cathode assembly, an anode assembly and a window assembly, and is characterized in that the anode assembly comprises an anode cap, an anode rod and an anode target assembly; the anode cap comprises an expansion part, a partition part and a necking part which are sequentially connected in the axial direction of the anode cap, the expansion part wraps the focusing piece from the bottom and the circumferential direction of the focusing piece, an electron beam incidence hole is formed in the partition part, and a packaging cavity extending in the axial direction and an X-ray outlet penetrating in the radial direction are formed in the necking part; the potential of the anode assembly is higher than that of the cathode assembly; along the axial direction of the X-ray tube, the distance H between the bottom of the focusing part and the top of the expansion part is greater than the distance D1 between the bottom of the focusing part and the partition part, so that stray electrons and secondary electrons generated by the stray electrons and overflow electrons and secondary electrons generated by the overflow electrons are absorbed after repeated back bombardment in the expansion part, and the secondary electrons are completely prevented from bombarding a tube shell, thereby improving the efficiency of the X-ray tube. And the high stability of the X-ray luminous flux is ensured.

A method of operating a charged particle beam apparatus is described. The method includes guiding a primary charged particle beam through an opening of an on-axis detector, through an intermediate lens, through an objective lens, and onto a specimen, wherein the intermediate lens is disposed between the on-axis detector and the objective lens; focusing the primary charged particle beam with the objective lens onto the specimen; in a first mode of operation, providing an excitation of the intermediate lens to collimate high energy signal electrons including backscattered electrons to the opening of the on-axis detector; in the first mode of operation, detecting low energy signal electrons including secondary electrons with the on-axis detector; and in the first mode of operation, detecting the backscattered electrons with a second electron detector upstream of the on-axis detector. Also a corresponding charged particle beam apparatus is described.

The invention relates to the technical field of nuclear physics, particle physics and nuclear celestial body physics experiments, in particular to a position-sensitive flight time detector and a use method thereof. The flight time detector comprises a detector field cage which is provided with an emission film used for generating secondary electrons and a high-voltage wire mesh used for providing an electric field required for guiding the secondary electrons; the delay line reading plates are arranged above the emission film in parallel at intervals; the conical anode readout is arranged below the emission film in parallel at intervals; the delay line read-out plate and the conical anode read-out plate are respectively provided with an MCP assembly on one side facing the emission film. The MCP assembly cooperates with the delay line readout plate to provide location information, and the MCP assembly cooperates with the tapered anode readout to provide time information. According to the flight time detector, a position reading part and a time reading part are combined, time resolution and position resolution can be independently optimized, and the structure can be compact.

Provides is an ultra-microlight transmission device using secondary electrons according to various embodiments of the present invention for implementing the above-objects. The ultra-microlight transmission device includes a light source module configured to generate light, a housing which includes an interior space and performs spectroscopy and diffuse reflection on light introduced into the interior space, a first filter unit configured to convert the spectroscopic and diffusely reflected light into monochromatic light, and a second filter unit configured to cause diffraction and interference for the converted light.

The invention discloses a method and a system for improving secondary electron collection efficiency in a rejection field scanning electron microscope. The method comprises the following steps: acquiring a new straight optical axis condition of a Wien filter when an edge electromagnetic field is not matched; under the new straight optical axis condition, the influence rule of the orientation angle and excitation of the Wien filter on the primary electron transmission characteristic is obtained; determining the position and the size of a secondary electron emission source; according to the position and the size of a secondary electron emission source and the influence rule of the orientation angle and the excitation of the Wien filter on the transmission characteristics of the primary electrons, the excitation and the orientation angle of the Wien filter required when the secondary electrons are completely collected are calculated.

Provided are: a hydrogen separation filter which has a high hydrogen permeation rate and which prevents or reduces separation between layers; and a method for producing the hydrogen separation filter. The hydrogen separation filter includes a porous substrate and a palladium layer provided on the porous substrate. The grain boundary number density observed in a cross-sectional secondary electron image of the palladium layer is 1-5 grains / [mu] m. A method for manufacturing a hydrogen separation filter includes forming a palladium layer on a porous base material by a sputtering method while keeping the temperature of the porous base material at 300-600 DEG C.

The present invention discloses a method for controlling the surface potential of an insulating material under high vacuum, which uses an ultraviolet light source to irradiate an insulating material sample to generate radiation-induced conductivity, and discharges the charge by discharging the charge to the ground. In the present invention, an ultraviolet light source is used to irradiate an insulating material sample to generate radiation-induced conductivity, and discharges the charge by discharging the charge to the ground, which can effectively eliminate the surface potential formed by the accumulated charge on the surface of the insulating material sample, without the need to additionally equip expensive equipment such as electron guns and ion sources, thereby reducing the cost of potential control, eliminating complex external circuit design, and increasing test reliability; ultraviolet irradiation is used to achieve surface potential control of the insulating material under high vacuum conditions, and the surface potential neutralization operation can be completed without contacting the sample surface, thereby avoiding damaging the sample surface morphology and thus affecting its secondary electron emission characteristics, increasing test stability, and improving the accuracy of secondary electron emission coefficient measurement.

A method of identifying defective electrical connections of a substrate is provided, the substrate having a first surface contact and a first electrical connection extending from the first surface contact through the substrate. The method includes placing the substrate on a stage in a vacuum chamber; charging the first surface contact by directing an electron beam on the first surface contact and detecting secondary electrons emitted from the first surface contact during the charging for determining a secondary electron signal over time; and determining a state information about the first electrical connection depending on an occurrence of a drop or decline in the secondary electron signal. Further described is an apparatus for identifying defective electrical connections of a substrate according to the methods described herein.

The invention relates to the technical field of high-current particle beam diagnosis, in particular to a high-energy ion beam three-dimensional reconstruction method and system based on secondary electron emission signals. According to the technical scheme, the method comprises the steps of data preprocessing and conversion, geometric space up-sampling, point assignment generation and model boundary division and output. According to the method, the spatial sparsity of original data is overcome through geometric upsampling, the fidelity of physical attribute reconstruction is remarkably improved by utilizing a topological structure based on a minimum spanning tree and a primary function frequency superposition model, automatic and accurate division of beam boundaries is realized according to a physical threshold value, an end-to-end automatic processing flow is formed, and the method has the advantages that the method is simple and convenient to operate and high in practicability. And outputting a visual three-dimensional model supporting interactive analysis, systematically solving the problems of data sparsity, interpolation distortion and boundary fuzziness in the prior art, and realizing high-precision and high-efficiency reconstruction and visual analysis of the three-dimensional form of the high-energy ion beam.

A method for identifying defective electrical connections of a substrate (10) having a first surface contact (21) and a first electrical connection (20) extending from the first surface contact through the substrate is provided. The method comprises the steps of: charging the first surface contact (21) by directing an electron beam (111) onto the first surface contact (21); detecting a first secondary electron signal (114) as a function of time during the charging of the first surface contact; inputting input data (510) containing or based thereon to a trained computational model (500), in particular a trained machine learning model; and receiving defect information (511) regarding the first electrical connection (20) as an output from the trained computational model (500). Additionally, an apparatus (100) for identifying defective electrical connections of a substrate and a computer-readable storage medium for storing the trained computational model (500) are described.

The application provides an X-ray communication device and method based on a laser-driven matrix photocathode. The device is applied to the technical field of X-ray tubes and comprises a laser control circuit, a matrix transmission photocathode array, a collimating microchannel plate, a matrix transmission anode target array, a vacuum tube shell and a beryllium window. The method comprises: generating a dynamic pattern, loading data information to be input into an optical signal; and exciting photoelectron emission with spatial resolution characteristics at a corresponding photocathode pixel area; each channel cluster is aligned with a single photocathode pixel at the front end; after the electrons enter the microchannel, continuous secondary electron emission occurs under the action of the electric field on the inner wall of the channel, and an avalanche effect is generated; and through mechanisms such as bremsstrahlung radiation, a bundle of microfocus X-rays is generated at each target point. In this way, the technical problems of the X-ray source in the prior art, such as the limitation in spatial coding capability, response speed, integration degree and communication dimension, can be solved.

A multi-beam charged particle beam system and a method for operating the multi-beam charged particle beam system with higher precision are provided. This improvement relates to a multi-beam forming unit that has lower sensitivity to secondary electrons, scattered charged particles, and x-ray radiation. Thereby, a plurality of primary charged particle beamlets can be generated with higher precision and a longer lifespan of the multi-beam forming unit. The present system and method are applicable to improved inspection of samples, such as wafer or mask inspection.

The present application provides a method, apparatus, electronic device, and storage medium for eliminating vibrations in a scanning electron microscope image. The method includes: determining vibration sampling points; performing spectral analysis on the secondary electron sampling signals obtained by single-point sampling of the vibration sampling points to obtain corresponding vibration amplitude information and vibration frequency information; determining signal peaks in the spectrogram obtained by spectral analysis, and fitting the signal peaks using the boundary length information in the target scanning electron microscope image to obtain corresponding vibration phase information; and performing vibration elimination processing on the target scanning electron microscope image. The method, apparatus, electronic device, and storage medium for eliminating vibrations in a scanning electron microscope image provided by the embodiments of the present invention obtain the numerical values of the frequency-amplitude combination of the main vibration peaks by optimizing the selection of vibration sampling points and performing single-point scanning. In this way, only the phase needs to be fitted during the graphic restoration process, greatly improving the efficiency and effect of graphic restoration.

The purpose of the present invention is to provide a system for detecting shape defects that cannot be obtained only by top-view geometric dimension data and deriving optimal processing conditions in the depth direction of an etched shape. Therefore, the semiconductor device manufacturing system of the present invention is characterized in that the optimization of the etching parameter is performed in at least one etching step based on correlation data between the etching parameter and the change amount of the feature amount and the acquired change amount of the feature amount. The feature amount is a value obtained from secondary electron data or interference light data from the surface of the sample, the change amount of the feature amount is the difference between the feature amount and a target value of the feature amount, and the acquired change amount of the feature amount is the change amount of the feature amount acquired for each depth of the etched shape formed by the semiconductor manufacturing apparatus. The etching steps are respective steps of processing conditions of the semiconductor manufacturing apparatus corresponding to each depth of an etching shape formed by the semiconductor manufacturing apparatus.

The invention provides an X-ray communication device and method based on a laser driving matrix type photocathode. The device is applied to the technical field of X-ray tubes and comprises a laser control circuit, a matrix transmission type photocathode array, a collimation type structure micro-channel plate, a matrix transmission type anode target array, a vacuum tube shell and a beryllium window. The method comprises the following steps: generating a dynamic pattern, and loading data information to be input into an optical signal; photoelectron emission with spatial resolution characteristics is excited in a corresponding photocathode pixel area; each channel cluster is aligned with a single photocathode pixel at the front end; after the electrons enter the micro-channel, continuous secondary electron emission occurs under the action of an electric field on the inner wall of the channel, and an avalanche effect is generated; a beam of micro-focus X-rays is generated at each target spot through mechanisms such as tough-induced radiation. In this way, the technical problem that in the prior art, an X-ray source is limited in space coding capacity, response speed, integration degree and communication dimension can be solved.

This photomultiplier tube includes a photoelectric surface, N-stage dynodes (N is an integer of 2 or more) for multiplying electrons emitted from the photoelectric surface, and an anode for collecting electrons multiplied by the dynodes. The anode has an electron collection surface that faces a secondary electron emission surface of the N-th stage dynode and at least partially extends along the secondary electron emission surface, and there is no electron passage hole on an electron path from the N-1th dynode to the N-th dynode.

The application discloses a mass spectrometer for measuring a low-isotope-content sample and belongs to the technical field of mass spectrometers. The mass spectrometer comprises a receiving device and a signal processing unit. The receiving device comprises a vacuum cavity, a metal target, a vacuum plastic flash body, a high-voltage electrode plate, a vacuum glass window, a photomultiplier tube and a photomultiplier tube cover. The signal processing unit comprises a high-voltage stabilizer and a pulse amplifier. The application converts ions into secondary electrons through the metal target, provides voltage for the metal target and the high-voltage electrode plate by the high-voltage stabilizer to form a high-intensity electric field, accelerates the secondary electrons to bombard the vacuum plastic flash body to generate an optical signal, receives and converts the optical signal into a pulse signal by the photomultiplier tube through the vacuum glass window, and finally performs shaping, amplification and conversion processing on the pulse signal by the pulse amplifier. The application does not need to rely on imported super-high resistance resistors, realizes the localization of the receiving device of the mass spectrometer, and has the advantages of high signal conversion efficiency, strong anti-interference capability, stable and reliable measurement and the like.

The invention belongs to the field of electric propulsion, and particularly relates to a neutralization compensation electrode applied to a Hall thruster. The neutralization compensation electrode is fixed on the outlet side of the Hall thruster and comprises an insulating connecting seat, an electronic ring and N non-magnetic and conductive fixing blocks, the electronic ring generates electrons under the sputtering of high-energy ions generated by the Hall thruster, the high-temperature environment at the outlet of the Hall thruster also promotes the electrons of the electronic ring to overflow, and the electrons generated by the electronic ring move towards the high-potential outlet of the Hall thruster to neutralize the electrons in the plume region at the outlet of the Hall thruster; the neutralization compensation electrode can reduce sputtering of high-energy ions on a shell of the Hall thruster when the thruster is ignited, and meanwhile, an electron ring is bombarded by ions by utilizing a charge exchange ionization phenomenon, so that secondary electrons are generated and are used for providing electrons.

A plasma processing method disclosed in the present invention includes a step of generating plasma in a chamber of a plasma processing apparatus by supplying high-frequency power from a high-frequency power source during a first period. The plasma processing method further includes a step of stopping the supply of the high-frequency power from the high-frequency power source during a second period following the first period. The plasma processing method further includes a step of applying a DC voltage having a negative polarity from the bias power source to the substrate support during a third period following the second period. In the third period, the high-frequency power is not supplied. In the third period, the negative-polarity direct-current voltage is set so that ions are generated in the chamber by means of secondary electrons that are released by causing the ions in the chamber to collide with the substrate.

The invention relates to a flat plate ionization chamber capable of measuring beta, X and gamma rays and a use method thereof, one side of an ionization chamber main body is provided with an incident window film, the incident window film side is provided with a balance cover, the balance cover is provided with a vent hole, and the vent hole is arranged on a circular plane of the balance cover; the spring needle is arranged in the ionization chamber main body and is in contact connection with the incident window film; the spring needle stud is located at the rear end of the spring needle, abuts against the rear wall of the ionization chamber body and is used for abutting against the spring needle to make continuous contact with the incidence window film. And the high-voltage conductive column is connected with the spring needle, is connected with an external power supply and is used for applying voltage to the incident window film through the spring needle. The balance cover is arranged in front of the ionization chamber main body, the balance cover provides a secondary electron balance condition for the ionization chamber to measure the strong penetrating radiation, the strong penetrating radiation can be measured by the ionization chamber, on the contrary, when the balance cover is removed, the weak penetrating radiation can be measured by the ionization chamber, and the strong penetrating radiation and the weak penetrating radiation can be measured by one ionization chamber. And the effect of weak through radiation can also be measured.

The invention discloses a silicon-based micro-channel plate (MCP) structure and a manufacturing method thereof, relates to the technical field of semiconductor device manufacturing, and aims to solve the problems of poor high temperature resistance, insufficient etching precision, film layer quality defect and process synergy deficiency of a traditional glass-based / organic-based MCP. An 8-inch N-type monocrystalline silicon wafer is adopted in the structure, the thickness of the N-type monocrystalline silicon wafer is (250-350) + / -25 microns, micropores of 3-10 microns are evenly distributed, the hole pitch is 7-22 microns, the inclination angle is 6-12 degrees, the side wall roughness is smaller than or equal to 50 nm, the perpendicularity deviation is smaller than or equal to + / -0.5 degrees, an AlO or AlO / HfO / AlO electron multiplication layer with the thickness of 10-30 nm is prepared on the inner wall of a channel through ALD, and a Cr / Ni electrode with the thickness of 50-80 nm is plated on the surface. According to the method, the OES is used for monitoring SiFs in real time. According to the invention, the double targets of < = 30% of 1kg impact fracture rate and stable electron multiplication gain are achieved, the tolerable temperature reaches 800 DEG C, the secondary electron emission efficiency is improved by 25%, the production efficiency is improved by 20%, the cost is reduced by 15%, and the method is suitable for the high-sensitivity detection fields of night vision imaging, particle detection and the like.

This invention relates to the field of vacuum electronics technology, specifically to a high-power capacity gyrotron collector structure. It includes a nonlinear interaction section, after which multiple segmented units are coaxially connected. Each segmented unit includes an output mode transition or output mode converter and a collector uniformity section. An electron beam channel and a microwave transmission channel are formed within the nonlinear interaction section and the segmented units. The ends of the electron beam channel and microwave transmission channel have an output window. The nonlinear interaction section, the multiple segmented units, and the output window cause microwaves to undergo a series of reflections, resulting in phase superposition and cancellation. This invention, while maintaining the output window parameters, significantly reduces the number of secondary and reflected electrons impacting the output window, thereby effectively improving the power capacity of the structure. This structure has the advantages of convenient fabrication and simple process implementation. This invention can be used in all high-power gyrotrons with axial output modes.

The application provides a method for measuring the white edge width of a photomask, comprising: providing a photomask, obtaining a secondary electron signal curve of a pattern in the photomask; obtaining a mutation point of the secondary electron signal curve, wherein the mutation point comprises a white edge starting point and a white edge ending point; setting a first threshold range and a second threshold range according to the white edge starting point and the white edge ending point, and obtaining a first characteristic peak width corresponding to the secondary electron signal curve according to a plurality of first thresholds, and obtaining a second characteristic peak width corresponding to the secondary electron signal curve according to a plurality of second thresholds; obtaining an optimal threshold combination in a plurality of threshold combinations, and obtaining a material coefficient of the photomask; and obtaining the white edge width of the pattern in the photomask; the application realizes the measurement of the white edge width of the photomask, can improve the accuracy of the measurement, and makes the measurement result adapt to different photomask materials in combination with the material coefficient.

The invention discloses an electron detection device and a scanning electron microscope, and relates to the technical field of scanning electron microscopes. The device comprises an objective lens, the objective lens comprises a first coil used for forming a magnetic lens and a second coil used for forming an immersion magnetic field, the first coil and the second coil are wrapped by a first pole shoe and a second pole shoe respectively in a non-closed mode, the first pole shoe is provided with an axial channel part, the second pole shoe is provided with a conical extension part, and a diaphragm hole is formed in the bottom of the conical extension part; the detector is arranged on the axial channel part or the conical extension part and is positioned above the diaphragm hole; and the first control electrode is arranged at the inner side of the diaphragm hole and is used for generating an electric field so as to cooperate with the immersion magnetic field generated by the second coil to guide or prevent the secondary electrons from reaching the detector. According to the electron detection device, through the arrangement of the first control electrode, secondary electrons can be guided to the detector, so that the collection efficiency of the secondary electrons can be improved, the secondary electrons can be prevented from reaching the detector, and the detector can conveniently collect backscattered electrons.

An electrostatic chuck assembly is provided that is less prone to spatial discharge within a gas passage plug. This electrostatic chuck assembly comprises a ceramic plate having an upper surface on which a wafer is placed and a lower surface opposite to the upper surface, and incorporating internal electrodes which are ESC electrodes and / or RF electrodes; a cooling plate attached to the lower surface of the ceramic plate; a plug placement hole penetrating the ceramic plate from the lower surface to the upper surface; a gas passage plug provided to close the plug placement hole and configured to allow gas to pass through its interior; and a gas introduction passage provided in the cooling plate and communicating with the plug placement hole. At least a portion of the gas-contactable surface within the gas passage plug is made of a low SEEC material having a secondary electron emission coefficient (SEEC) of 5.0 or less.