267 results about "Secondary electrons" patented technology

The invention provides a material characterization image analysis system and an analysis method thereof. The invention discloses a material characterization image analysis system and an analysis method thereof, and the method comprises the following steps: S1, obtaining a back scattering electron image, a secondary electron image and energy spectrum data of a material through a scanning electron microscope, and dynamically adjusting the acceleration voltage, beam current and detector gain of the scanning electron microscope through a parameter optimization algorithm based on a preset material type and an observation target; s2, carrying out multi-scale feature enhancement preprocessing on the back scattering electron image and the secondary electron image, wherein the preprocessing comprises noise suppression, non-uniform illumination correction and micro-area texture enhancement; s3, pixel-level space registration is carried out on the back scattering electron image and the energy spectrum element distribution diagram, and a multi-modal fusion feature matrix is constructed. The material characterization image analysis system and the analysis method thereof provided by the invention have the advantages that the distortion problem can be well solved, the micro-structure identification accuracy can be improved, and the life prediction error can be reduced.

The invention relates to an ultrafast electron microscopic imaging device and an imaging method thereof, in particular to a multi-mode multi-dimensional ultrafast electron microscopic imaging device and an imaging method thereof, and solves the problem that the existing electron microscopic imaging technical scheme is difficult to simultaneously meet the measurement requirements of high time-space-energy-momentum resolution and material diversification. The device comprises a sample cabin, an electron gun, a laser generation module, a secondary electron detector, an STEM detector, an in-cabin plug-in detection assembly, a plug-in camera and an energy filtering electron microscope assembly which are arranged below the sample cabin, and a vacuum system, a hollow sample table is arranged in the sample cabin, and at least two ultrafast pumping laser introduction windows are arranged on the cabin wall of the sample cabin; an ultrafast detection laser introduction window is arranged on the electronic gun shell; the secondary electron detector is arranged obliquely above the sample table; the STEM detector is arranged on the side cabin wall of the sample cabin and is positioned below the sample table; and the in-cabin plug-in detection assembly is arranged below the STEM detector.

The invention relates to the field of mass spectrum equipment, in particular to a low-noise and high-sensitivity mass spectrometer Faraday cup. The Faraday cup comprises a rectangular housing, one side of which is open; the suppression grid is arranged in the shell and is close to the opening; the collector is arranged in the shell and is adjacent to the suppression grid; a slit baffle is arranged at the opening of the shell; the collector is fixed through the insulating lining, insulated from the shell, and used for receiving the ion beam and generating current; the suppression grid electrode is fixed through an insulating lining and a metal positioning block, and negative bias voltage is applied to suppress escape of secondary electrons; the top cover is assembled on the shell to form a sealed whole; the collector connecting piece is arranged on the lower portion of the collector, one end of the Faraday cup outgoing line is welded to the collector connecting piece, and the other end of the Faraday cup outgoing line is led out of the shell. Noise is remarkably reduced, and the detection sensitivity of a mass spectrometer is improved.

This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

The utility model relates to the technical field of X-ray tubes, in particular to an X-ray tube with high-stability luminous flux, which comprises a tube shell, a cathode assembly, an anode assembly and a window assembly, and is characterized in that the anode assembly comprises an anode cap, an anode rod and an anode target assembly; the anode cap comprises an expansion part, a partition part and a necking part which are sequentially connected in the axial direction of the anode cap, the expansion part wraps the focusing piece from the bottom and the circumferential direction of the focusing piece, an electron beam incidence hole is formed in the partition part, and a packaging cavity extending in the axial direction and an X-ray outlet penetrating in the radial direction are formed in the necking part; the potential of the anode assembly is higher than that of the cathode assembly; along the axial direction of the X-ray tube, the distance H between the bottom of the focusing part and the top of the expansion part is greater than the distance D1 between the bottom of the focusing part and the partition part, so that stray electrons and secondary electrons generated by the stray electrons and overflow electrons and secondary electrons generated by the overflow electrons are absorbed after repeated back bombardment in the expansion part, and the secondary electrons are completely prevented from bombarding a tube shell, thereby improving the efficiency of the X-ray tube. And the high stability of the X-ray luminous flux is ensured.

Provides is an ultra-microlight transmission device using secondary electrons according to various embodiments of the present invention for implementing the above-objects. The ultra-microlight transmission device includes a light source module configured to generate light, a housing which includes an interior space and performs spectroscopy and diffuse reflection on light introduced into the interior space, a first filter unit configured to convert the spectroscopic and diffusely reflected light into monochromatic light, and a second filter unit configured to cause diffraction and interference for the converted light.

The invention discloses a method and a system for improving secondary electron collection efficiency in a rejection field scanning electron microscope. The method comprises the following steps: acquiring a new straight optical axis condition of a Wien filter when an edge electromagnetic field is not matched; under the new straight optical axis condition, the influence rule of the orientation angle and excitation of the Wien filter on the primary electron transmission characteristic is obtained; determining the position and the size of a secondary electron emission source; according to the position and the size of a secondary electron emission source and the influence rule of the orientation angle and the excitation of the Wien filter on the transmission characteristics of the primary electrons, the excitation and the orientation angle of the Wien filter required when the secondary electrons are completely collected are calculated.

Provided are: a hydrogen separation filter which has a high hydrogen permeation rate and which prevents or reduces separation between layers; and a method for producing the hydrogen separation filter. The hydrogen separation filter includes a porous substrate and a palladium layer provided on the porous substrate. The grain boundary number density observed in a cross-sectional secondary electron image of the palladium layer is 1-5 grains / [mu] m. A method for manufacturing a hydrogen separation filter includes forming a palladium layer on a porous base material by a sputtering method while keeping the temperature of the porous base material at 300-600 DEG C.

The present invention discloses a method for controlling the surface potential of an insulating material under high vacuum, which uses an ultraviolet light source to irradiate an insulating material sample to generate radiation-induced conductivity, and discharges the charge by discharging the charge to the ground. In the present invention, an ultraviolet light source is used to irradiate an insulating material sample to generate radiation-induced conductivity, and discharges the charge by discharging the charge to the ground, which can effectively eliminate the surface potential formed by the accumulated charge on the surface of the insulating material sample, without the need to additionally equip expensive equipment such as electron guns and ion sources, thereby reducing the cost of potential control, eliminating complex external circuit design, and increasing test reliability; ultraviolet irradiation is used to achieve surface potential control of the insulating material under high vacuum conditions, and the surface potential neutralization operation can be completed without contacting the sample surface, thereby avoiding damaging the sample surface morphology and thus affecting its secondary electron emission characteristics, increasing test stability, and improving the accuracy of secondary electron emission coefficient measurement.

The invention relates to the technical field of high-current particle beam diagnosis, in particular to a high-energy ion beam three-dimensional reconstruction method and system based on secondary electron emission signals. According to the technical scheme, the method comprises the steps of data preprocessing and conversion, geometric space up-sampling, point assignment generation and model boundary division and output. According to the method, the spatial sparsity of original data is overcome through geometric upsampling, the fidelity of physical attribute reconstruction is remarkably improved by utilizing a topological structure based on a minimum spanning tree and a primary function frequency superposition model, automatic and accurate division of beam boundaries is realized according to a physical threshold value, an end-to-end automatic processing flow is formed, and the method has the advantages that the method is simple and convenient to operate and high in practicability. And outputting a visual three-dimensional model supporting interactive analysis, systematically solving the problems of data sparsity, interpolation distortion and boundary fuzziness in the prior art, and realizing high-precision and high-efficiency reconstruction and visual analysis of the three-dimensional form of the high-energy ion beam.

The application provides an X-ray communication device and method based on a laser-driven matrix photocathode. The device is applied to the technical field of X-ray tubes and comprises a laser control circuit, a matrix transmission photocathode array, a collimating microchannel plate, a matrix transmission anode target array, a vacuum tube shell and a beryllium window. The method comprises: generating a dynamic pattern, loading data information to be input into an optical signal; and exciting photoelectron emission with spatial resolution characteristics at a corresponding photocathode pixel area; each channel cluster is aligned with a single photocathode pixel at the front end; after the electrons enter the microchannel, continuous secondary electron emission occurs under the action of the electric field on the inner wall of the channel, and an avalanche effect is generated; and through mechanisms such as bremsstrahlung radiation, a bundle of microfocus X-rays is generated at each target point. In this way, the technical problems of the X-ray source in the prior art, such as the limitation in spatial coding capability, response speed, integration degree and communication dimension, can be solved.

The invention provides an X-ray communication device and method based on a laser driving matrix type photocathode. The device is applied to the technical field of X-ray tubes and comprises a laser control circuit, a matrix transmission type photocathode array, a collimation type structure micro-channel plate, a matrix transmission type anode target array, a vacuum tube shell and a beryllium window. The method comprises the following steps: generating a dynamic pattern, and loading data information to be input into an optical signal; photoelectron emission with spatial resolution characteristics is excited in a corresponding photocathode pixel area; each channel cluster is aligned with a single photocathode pixel at the front end; after the electrons enter the micro-channel, continuous secondary electron emission occurs under the action of an electric field on the inner wall of the channel, and an avalanche effect is generated; a beam of micro-focus X-rays is generated at each target spot through mechanisms such as tough-induced radiation. In this way, the technical problem that in the prior art, an X-ray source is limited in space coding capacity, response speed, integration degree and communication dimension can be solved.

This photomultiplier tube includes a photoelectric surface, N-stage dynodes (N is an integer of 2 or more) for multiplying electrons emitted from the photoelectric surface, and an anode for collecting electrons multiplied by the dynodes. The anode has an electron collection surface that faces a secondary electron emission surface of the N-th stage dynode and at least partially extends along the secondary electron emission surface, and there is no electron passage hole on an electron path from the N-1th dynode to the N-th dynode.

The application discloses a mass spectrometer for measuring a low-isotope-content sample and belongs to the technical field of mass spectrometers. The mass spectrometer comprises a receiving device and a signal processing unit. The receiving device comprises a vacuum cavity, a metal target, a vacuum plastic flash body, a high-voltage electrode plate, a vacuum glass window, a photomultiplier tube and a photomultiplier tube cover. The signal processing unit comprises a high-voltage stabilizer and a pulse amplifier. The application converts ions into secondary electrons through the metal target, provides voltage for the metal target and the high-voltage electrode plate by the high-voltage stabilizer to form a high-intensity electric field, accelerates the secondary electrons to bombard the vacuum plastic flash body to generate an optical signal, receives and converts the optical signal into a pulse signal by the photomultiplier tube through the vacuum glass window, and finally performs shaping, amplification and conversion processing on the pulse signal by the pulse amplifier. The application does not need to rely on imported super-high resistance resistors, realizes the localization of the receiving device of the mass spectrometer, and has the advantages of high signal conversion efficiency, strong anti-interference capability, stable and reliable measurement and the like.

A plasma processing method disclosed in the present invention includes a step of generating plasma in a chamber of a plasma processing apparatus by supplying high-frequency power from a high-frequency power source during a first period. The plasma processing method further includes a step of stopping the supply of the high-frequency power from the high-frequency power source during a second period following the first period. The plasma processing method further includes a step of applying a DC voltage having a negative polarity from the bias power source to the substrate support during a third period following the second period. In the third period, the high-frequency power is not supplied. In the third period, the negative-polarity direct-current voltage is set so that ions are generated in the chamber by means of secondary electrons that are released by causing the ions in the chamber to collide with the substrate.

The invention relates to a flat plate ionization chamber capable of measuring beta, X and gamma rays and a use method thereof, one side of an ionization chamber main body is provided with an incident window film, the incident window film side is provided with a balance cover, the balance cover is provided with a vent hole, and the vent hole is arranged on a circular plane of the balance cover; the spring needle is arranged in the ionization chamber main body and is in contact connection with the incident window film; the spring needle stud is located at the rear end of the spring needle, abuts against the rear wall of the ionization chamber body and is used for abutting against the spring needle to make continuous contact with the incidence window film. And the high-voltage conductive column is connected with the spring needle, is connected with an external power supply and is used for applying voltage to the incident window film through the spring needle. The balance cover is arranged in front of the ionization chamber main body, the balance cover provides a secondary electron balance condition for the ionization chamber to measure the strong penetrating radiation, the strong penetrating radiation can be measured by the ionization chamber, on the contrary, when the balance cover is removed, the weak penetrating radiation can be measured by the ionization chamber, and the strong penetrating radiation and the weak penetrating radiation can be measured by one ionization chamber. And the effect of weak through radiation can also be measured.

The invention discloses a silicon-based micro-channel plate (MCP) structure and a manufacturing method thereof, relates to the technical field of semiconductor device manufacturing, and aims to solve the problems of poor high temperature resistance, insufficient etching precision, film layer quality defect and process synergy deficiency of a traditional glass-based / organic-based MCP. An 8-inch N-type monocrystalline silicon wafer is adopted in the structure, the thickness of the N-type monocrystalline silicon wafer is (250-350) + / -25 microns, micropores of 3-10 microns are evenly distributed, the hole pitch is 7-22 microns, the inclination angle is 6-12 degrees, the side wall roughness is smaller than or equal to 50 nm, the perpendicularity deviation is smaller than or equal to + / -0.5 degrees, an AlO or AlO / HfO / AlO electron multiplication layer with the thickness of 10-30 nm is prepared on the inner wall of a channel through ALD, and a Cr / Ni electrode with the thickness of 50-80 nm is plated on the surface. According to the method, the OES is used for monitoring SiFs in real time. According to the invention, the double targets of < = 30% of 1kg impact fracture rate and stable electron multiplication gain are achieved, the tolerable temperature reaches 800 DEG C, the secondary electron emission efficiency is improved by 25%, the production efficiency is improved by 20%, the cost is reduced by 15%, and the method is suitable for the high-sensitivity detection fields of night vision imaging, particle detection and the like.

This invention relates to the field of vacuum electronics technology, specifically to a high-power capacity gyrotron collector structure. It includes a nonlinear interaction section, after which multiple segmented units are coaxially connected. Each segmented unit includes an output mode transition or output mode converter and a collector uniformity section. An electron beam channel and a microwave transmission channel are formed within the nonlinear interaction section and the segmented units. The ends of the electron beam channel and microwave transmission channel have an output window. The nonlinear interaction section, the multiple segmented units, and the output window cause microwaves to undergo a series of reflections, resulting in phase superposition and cancellation. This invention, while maintaining the output window parameters, significantly reduces the number of secondary and reflected electrons impacting the output window, thereby effectively improving the power capacity of the structure. This structure has the advantages of convenient fabrication and simple process implementation. This invention can be used in all high-power gyrotrons with axial output modes.

The application provides a method for measuring the white edge width of a photomask, comprising: providing a photomask, obtaining a secondary electron signal curve of a pattern in the photomask; obtaining a mutation point of the secondary electron signal curve, wherein the mutation point comprises a white edge starting point and a white edge ending point; setting a first threshold range and a second threshold range according to the white edge starting point and the white edge ending point, and obtaining a first characteristic peak width corresponding to the secondary electron signal curve according to a plurality of first thresholds, and obtaining a second characteristic peak width corresponding to the secondary electron signal curve according to a plurality of second thresholds; obtaining an optimal threshold combination in a plurality of threshold combinations, and obtaining a material coefficient of the photomask; and obtaining the white edge width of the pattern in the photomask; the application realizes the measurement of the white edge width of the photomask, can improve the accuracy of the measurement, and makes the measurement result adapt to different photomask materials in combination with the material coefficient.

The invention discloses an electron detection device and a scanning electron microscope, and relates to the technical field of scanning electron microscopes. The device comprises an objective lens, the objective lens comprises a first coil used for forming a magnetic lens and a second coil used for forming an immersion magnetic field, the first coil and the second coil are wrapped by a first pole shoe and a second pole shoe respectively in a non-closed mode, the first pole shoe is provided with an axial channel part, the second pole shoe is provided with a conical extension part, and a diaphragm hole is formed in the bottom of the conical extension part; the detector is arranged on the axial channel part or the conical extension part and is positioned above the diaphragm hole; and the first control electrode is arranged at the inner side of the diaphragm hole and is used for generating an electric field so as to cooperate with the immersion magnetic field generated by the second coil to guide or prevent the secondary electrons from reaching the detector. According to the electron detection device, through the arrangement of the first control electrode, secondary electrons can be guided to the detector, so that the collection efficiency of the secondary electrons can be improved, the secondary electrons can be prevented from reaching the detector, and the detector can conveniently collect backscattered electrons.

An electrostatic chuck assembly is provided that is less prone to spatial discharge within a gas passage plug. This electrostatic chuck assembly comprises a ceramic plate having an upper surface on which a wafer is placed and a lower surface opposite to the upper surface, and incorporating internal electrodes which are ESC electrodes and / or RF electrodes; a cooling plate attached to the lower surface of the ceramic plate; a plug placement hole penetrating the ceramic plate from the lower surface to the upper surface; a gas passage plug provided to close the plug placement hole and configured to allow gas to pass through its interior; and a gas introduction passage provided in the cooling plate and communicating with the plug placement hole. At least a portion of the gas-contactable surface within the gas passage plug is made of a low SEEC material having a secondary electron emission coefficient (SEEC) of 5.0 or less.

A method of checking calibration of a dual-mode secondary electron multiplier (SEM) detector of a mass spectrometer using non-analyte ions, the method comprising: recording, using a counting mode dete

A positive electrode mixture including: a conductivity aid that is a carbon material; a sulfur-based active material; and a solid electrolyte, wherein the variation in luminance intensity in the same field of view is 0.250 or less in a secondary electron image from a scanning electron microscope, and at least part of the solid electrolyte is crystalline with the crystallite diameter thereof being 90 nm or less.

This invention discloses a design and fabrication method for alumina ceramic insulating components for vacuum applications, belonging to the technical field of ceramic insulating component design and fabrication. The method includes steps such as macroscopic structural optimization to control the surface electric field distribution and microscopic structural optimization to control secondary electron multiplication. This invention integrates the two stages of vacuum surface flashover initiation and development into a unified optimized design and model construction, effectively reducing the generation of initial electrons and suppressing the multiplication of secondary electrons. This not only significantly enhances the dielectric strength of the entire insulation system but also significantly improves the stability of the equipment. Using ceramic 3D printing with photopolymerization layer-by-layer printing, no additional machining or mold manufacturing is required. A 3D printer using ultraviolet light digital forming technology combined with a sintering furnace can directly generate complex and intricately patterned alumina ceramic components from computer graphics data in a unified manner. This greatly shortens the product development cycle, improves production efficiency, and reduces production costs.

A multi-beam charged particle system with a secondary electron imaging system is provided that is configured for dynamic compensation of the charging effect. The multi-band electron particle system includes an improved cross detection system and a cross actuation mechanism, both connected to a contrast control module. By using the system, closed loop control can be performed on the intensity distribution of a plurality of secondary electron small beams in a crossed or pupil plane. The method can be applied to wafer inspection of a multi-beam charged particle system.

According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: a deflector configured to cause at least one detector of the detector array to detect a signal waveform caused by an incidence position of a detected secondary electron beam on the at least one detector of the detector array detecting multiple secondary electron beams emitted due to irradiating an object with multiple primary electron beams in a case that a predetermined period of time has passed from start of irradiation of the multiple primary electron beams by deflecting the multiple secondary electron beams; a deviation amount calculation circuit configured to calculate a deviation amount of the incidence position using the signal waveform; and a corrector configured to correct incidence positions of the multiple secondary electron beams on the detector array so as to reduce the deviation amount.

Structure height measuring device (100), comprising: an electron beam scanning unit (3) which is suitable for irradiating a surface of a sample (8) with an electron beam (31), wherein the electron beam (31) scans over the surface of the sample (8), a plurality of detectors (9a-9d) arranged above the surface of the sample (8) and around an optical axis of the electron beam (31) and adapted to detect an intensity of secondary electrons emitted from the surface of the sample (8) by the irradiation of the electron beam (31), a signal processing unit (11) which generates a plurality of image data (a1-a8) based on detection signals from the plurality of detectors (9a-9d), the plurality of image data (a1-a8) being obtained by capturing images of the surface of the sample in mutually different directions, an image processing unit (12) which, on the basis of the image data (a1-a8), extracts an intensity distribution of the secondary electrons along a line intersecting the edge of a structure formed on the surface of the sample (8), wherein the image processing unit extracts the intensity distribution of the secondary electrons from the image data (a1-a8) recorded in a direction orthogonal to the edge of the structure and determines a length of a shadow of the structure based on the intensity distribution of the secondary electrons near the edge, and a calculation unit (13) adapted to calculate a height of the structure on the basis of the length of the shadow determined by the image processing unit, wherein the image processing unit (12): a distance between two points at which the intensity distribution of the secondary electrons near the edge intersects a given threshold, and defines the distance as the length of the shadow, or a distance between a minimum value range of the intensity distribution of the secondary electrons and a point on one side away from the structure at which the intensity distribution of the secondary electrons near the edge intersects a given threshold, and defines the distance as the length of the shadow, or a square root of an area of ​​a region surrounded by the intensity distribution of the secondary electrons near the edge and a straight line indicating a given threshold is determined and the square root is defined as the length of the shadow, or a distance between an upper end or a lower end of the edge of the structure and a point on one side away from the structure at which the intensity distribution of the secondary electrons near the edge intersects a predetermined threshold, and defines the distance as the length of the shadow.

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder. In a binarized image of a secondary electron image obtained by imaging a surface of the magnetic layer with a scanning electron microscope at an acceleration voltage of 5 kV, the number of bright regions having an equivalent circle diameter of 75 nm or more and less than 125 nm is 100 or more and 4000 or less, and standard deviation σ of the number of the bright regions in a width direction of the surface of the magnetic layer is 400 or less.

A system includes an electron source that generates an electron beam, a stage that holds a workpiece in a path of the electron beam, a magnetic objective lens disposed in a path of the electron beam, a focus element disposed in the path of the electron beam between the magnetic objective lens and the stage, and a backscattered electron detector disposed in the path of the electron beam between the focus element and the magnetic objective lens. Backscattered electrons, secondary electrons, and x-rays are emitted from the workpiece. The backscattered electrons are measured with the backscattered electron detector.

The invention relates to a method for preparing an electron transport layer in a perovskite battery through magnetron sputtering and the perovskite battery, the magnetron sputtering is carried out by adopting the method provided by the invention, secondary electrons generated by target materials serving as cathodes are interacted by an electric field and a magnetic field, and then are effectively controlled in a space defined by at least two target materials, so that the electron transport layer in the perovskite battery is prepared. Columnar plasmas are formed, the collision ionization probability between electrons and reaction gas is further increased, the ionization degree of the reaction gas is effectively improved, and the deposition rate of the electron transport layer on the surface of the perovskite layer is increased. Besides, the plasma formed by the secondary electrons is bound in the space enclosed by the at least two target materials, so that the bombardment effect of the electrons with relatively high kinetic energy on the substrate can be avoided, the damage to the substrate is further effectively reduced, meanwhile, the temperature rise of the perovskite layer in the magnetron sputtering process is also inhibited, and the cycling stability of the perovskite battery is ensured.