67 results about "Plasma acceleration" patented technology

A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from the platen, and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.

A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator. An RF power source provides RF power to at least one electrode disposed about and / or inside the plasma accelerator that induces current for ionizing the gas to create the plasma such that the axial electric field accelerates ions through the plasma accelerator to provide ion flux.

A Hall field plasma accelerator with closed electron drift includes a composite anode including a housing with inner and outer walls which form an outer anode and an inner anode forming inner and outer distribution zones; the housing is electrically conductive and has an upstream end and an exit port electrically insulated from the housing; the composite anode includes an input distribution system for introducing plasma gas into the distribution zones; poles establish a magnetic field across the exit port and a cathode establishes an electron flow through the magnetic field toward the composite anode and creates an electric field through the exit port; the electrons ionize the plasma gas that is accelerated by the electric field through the exit port.

A plasma ion implantation system includes a process chamber, a source for generating a plasma in the process chamber, a platen for holding a substrate in the process chamber, an implant pulse source configured to generate implant pulses for accelerating ions from the plasma into the substrate, and an axial electrostatic confinement structure configured to confine electrons in a direction generally orthogonal to a surface of the platen. The confinement structure may include an auxiliary electrode spaced from the platen and a bias source configured to bias the auxiliary electrode at a negative potential relative to the plasma.

Disclosed is a high-frequency discharge plasma generation-based two-stage Hall-effect plasma accelerator, which comprises an annular acceleration channel having a gas inlet port, a high-frequency wave supply section, an anode, a cathode, a neutralizing electron generation portion and a magnetic-field generation means, wherein: gas introduced from the gas inlet port into the annular acceleration channel is ionized by a high-frequency wave supplied from the high-frequency wave supply section, to generate plasma; a positive ion includes in the generated plasma is accelerated by an acceleration voltage applied between the anode and cathode, and ejected outside; and an electron included in the generated plasma is restricted in its movement in the axial direction of the annular acceleration channel by an interaction with a magnetic field. The two-stage Hall-effect plasma accelerator is designed to control a degree of ion acceleration in accordance with the acceleration voltage serving as an acceleration control parameter, and control an amount of plasma generation in accordance with the high-frequency wave output serving as a plasma-generation control parameter. The two-stage Hall-effect plasma accelerator of the present invention can control the ion acceleration and the plasma generation in a highly independent manner.

Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

The closed electron drift plasma accelerator comprises an annular ionization chamber, an acceleration chamber on the same axis as the ionization chamber, an annular anode, a hollow cathode, a first DC voltage source, an annular gas manifold, a magnetic circuit, and magnetic field generators. A coaxial annular coil is placed in the cavity of the ionization chamber, is provided with bias conductive cladding connected, together with the electrically-conductive material of the inside faces of the walls of the ionization chamber, to the positive pole of a second voltage source whose negative pole is connected to the anode, and constitutes an additional magnetic field generator which, together with the other magnetic field generators, forms a magnetic field having a magnetic line of force with an “X” point corresponding to a magnetic field zero situated between the coaxial annular coil and the anode.

A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from the platen, and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.

The invention discloses a plasma laser plasma electricity hybrid micro-propulsion unit which comprises a pulse laser ablation device, a propellant supply device and a plasma accelerating device, wherein the pulse laser ablation device irradiates a propellant supplied by the propellant supply device to generate high-speed plasma; and the plasma accelerating device is used for accelerating the high-speed plasma again. The invention also provides a pulse laser plasma electricity hybrid micro-propulsion method which comprises the following steps of: generating high-temperature and high-speed plasma through the high-frequency pulse laser ablation propellant; and accelerating the high-temperature and high-speed plasma through an electric field or magnetic field. According to the invention, a pushing force with high specific impulse and high thrust-to-power ratio can be provided for a mini satellite.

A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

A Hall thruster with a shared magnetic structure including a plurality of plasma accelerators each including an anode and a discharge zone for providing plasma discharge. An electrical circuit having one or more cathodes connected to the plurality of plasma accelerators emits electrons that are attracted to the anode in each of the plasma accelerators. A shared magnetic circuit structure establishes a transverse magnetic field in each of the plurality of plasma accelerators that creates an impedance to the flow of electrons toward the anode in each of the plurality of plasma accelerators and enables ionization of a gas moving through one or more of the plurality of plasma accelerators. The impedance localizes an axial electric field in the plurality of plasma accelerators for accelerating ionized gas through the one or more of the plurality of plasma accelerators to create thrust.

The invention relates to a magnetic nozzle of a variable specific impulse magnetic plasma rocket, aiming at solving the problem of speed waste during acceleration of a plasma body in an electric propulsion system and relating to the design technology of the magnetic nozzle of the variable specific impulse magnetic plasma rocket. The magnetic nozzle of the variable specific impulse magnetic plasma rocket is used for changing a circumferential speed of the plasma body to an axial speed and belongs to the magnetic fluid technology field. The magnetic nozzle which is used as the last stage of the variable specific impulse magnetic plasma rocket is arranged at the tail end of a rocket engine and consists of a sprayer nozzle and a superconducting coil, wherein, the sprayer nozzle is arranged at the tail end of a shell body of the rocket engine and is an expanding nozzle, the nozzle expansion ratio which is the ratio between a nozzle exit area and a nozzle throat area is 40:1, the nozzle is made of a heat-resisting and ablation-resisting alloy material to reduce ablation and thrust eccentricity.

A tandem Hall field plasma accelerator with closed electron drift includes a magnetic circuit having an inner pole and an outer pole and a magnetic field source and a discharge cavity disposed axially in tandem; the discharge cavity including an axially extending accelerator section defining an exit aperture between the inner and outer poles and a plenum section extending radially outwardly and upstream of the accelerator section and including an anode and a propellant injector. Also disclosed is the use of an electromagnetic coil which provides a magnetic field in a magnetic circuit and includes a multiple turn winding wound on an electrically conductive bobbin. The plasma discharge is connected electrically in series with the electromagnetic coil and a power source with a bobbin defining a single turn secondary coil winding on the magnetic circuit which reduces magnetic field fluctuations in the plasma discharge and reduces eddy currents and consequent heating of the magnetic circuit.

An electromagnetic accelerator having a nozzle part. The electromagnetic accelerator includes an initial discharge part for generating a plasma, an acceleration part and a nozzle part for accelerating the plasma. A composite wave, which is synthesized from a plasma generation frequency and a plasma acceleration frequency, is applied as a current to the electromagnetic accelerator. Accordingly, the uniformity among the plasma generation, the plasma acceleration, and the plasma flow can be ensured, and the plasma generation efficiency and the plasma acceleration efficiency can be maximized.

The invention relates to a plasma accelerator that produces and controls a plasma stream exhaust, in particular for space propulsion. The ions are produced inside the discharge chamber by working gas collisional ionization by electrons from a single electron source placed outside, also employed for ion beam neutralization. The ion motion is directed outwards through the exit side by the electric field between a cathode grid and the walls of the plasma chamber. The acceleration voltage imparts energy to the ion flux and an electrically biased control grid modulates the ion outflow from the discharge chamber and the electron inflow from the electron source. This allows electrical control of throttle and / or modulation of thrust delivered along the longitudinal direction of the thruster axis. Several plasma accelerators could be clustered together to provide controlled non-axial thrust using the individual control of throttle.

A Free Electron Laser source includes: a fiber-based laser having a plurality of amplifying fibres wherein an initial laser pulse is distributed and amplified, and element for grouping together the elementary pulses amplified in the fibre in order to form an a single amplified global laser pulse; a laser plasma accelerator wherein the global laser pulse generates relativistic electron beams, a beam focusing system transporting electron beams from the laser plasma accelerator, an undulator wherein relativistic electron beams generate an electromagnetic beam, and a beam separator system, wherein the electron beam and the electromagnetic beam are separated.

A method for testing the sensitivity of electronic components and circuits against particle and photon beams using plasma acceleration, in which the flexibility of the multifaceted interaction can produce several types of radiation such as electron, proton, ion, neutron and photon radiation, and combinations of these types of radiation, in a wide range of parameters that are relevant to the use of electronic components in space, such as satellites, at high altitudes or in facilities that work with radioactive substances such as nuclear power plants. Relevant radiation parameter ranges are accessible by this method, which are hardly accessible with conventional accelerator technology. Because of the compactness of the procedure and its versatility, radiation testing can be performed in smaller laboratories at relatively low cost.

The invention discloses a multifunctional focusing device for pulse electron beams which are generated based on a new type desktop laser plasma accelerator, wherein the pulse electron beams have femtosecond level pulse width, ultrahigh intensity and a relatively large peak energy jitter range. The device comprises four combination electromagnets with controllable gradients, a time delay controller and a pulse response fluorescent board electron beam imaging system. According to the device, laser plasma electron beam sources can be focused effectively, and moreover, functions such as energy monitoring, orientation monitoring and multi-beam group energy screening are achieved. The device has the advantages of simple operation, convenience, high efficiency and flexible feedback and can be used for effectively diagnosing and controlling electron beam groups in a laser plasma wakefield acceleration electron mechanism. According to the device, the application of the electron beams to a new generation ultrastrong coherent free electron laser light source is greatly promoted.

A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

A plasma accelerator is provided. The plasma accelerator includes a chamber having a closed top, an opened bottom and a lateral surface, a first coil section comprising a plurality of coils that are connected to one another in series and are wound around the lateral surface of the chamber in opposite directions, and a second coil section comprising a plurality of coils that are wound around the lateral surface of the chamber between coils of the first coil section in opposite directions. Accordingly, it is possible to make the mutual inductance between the coils small, to accurately adjust levels and phase differences of currents to be applied to the coils, and also to simplify the driving circuit.

A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

The invention discloses a multi-section type high-efficiency pulse plasma thruster, and belongs to the field of micro-nano satellite micro-propulsion. The thruster is mainly composed of a one-sectionanode, a one-section cathode, a two-section anode, a two-section cathode, an insulation section, a trigger electrode, a trigger working medium, an energy storage capacitor set, a propellant, a coatinglayer and an outer shell body; the electrodes of the thruster are divided into two sections, each section of electrodes is provided with a voltage through a respective energy storage capacitor, so that the total energy distributed to different capacitors discharging at different positions are realized, so that a propellant ablation ionization process and a plasma acceleration process are separated, more energy is enabled to be used for the plasma acceleration process, and the whole acceleration efficiency of the thruster can be improved. A small amount of plasma is generated by triggering theworking medium which is triggered through a trigger electrode, the breakdown voltage between one-section electrode is greatly reduced to facilitate the triggering of initial discharge, and then the reliability of the operation of the thruster is further improved; and the thruster is suitable for application occasions of low-power wiener satellites, and meets corresponding task thrust requirements.

A method for testing the sensitivity of electronic components and circuits against particle and photon beams using plasma acceleration, in which the flexibility of the multifaceted interaction can produce several types of radiation such as electron, proton, ion, neutron and photon radiation, and combinations of these types of radiation, in a wide range of parameters that are relevant to the use of electronic components in space, such as satellites, at high altitudes or in facilities that work with radioactive substances such as nuclear power plants. Relevant radiation parameter ranges are accessible by this method, which are hardly accessible with conventional accelerator technology. Because of the compactness of the procedure and its versatility, radiation testing can be performed in smaller laboratories at relatively low cost.

A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the inner and outer walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas inside the channel to generate a plasma beam, and to accelerate the generated plasma beam toward the outlet port, wherein one of the inner wall and outer wall of the channel is inclined at an angle so that the other end of the wall is located closer to a center of the plasma accelerating apparatus.

This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator. An RF power source provides RF power to at least one electrode disposed about and / or inside the plasma accelerator that induces current for ionizing the gas to create the plasma such that the axial electric field accelerates ions through the plasma accelerator to provide ion flux.

The invention relates to a high-density plasma jet generating device based on the reversed field configuration structure of the current driving technology, which belongs to the technical field of application of low-temperature plasma. The invention aims to solve the problem that a radio frequency inductively coupled plasma source can hardly meet the requirements for plasma density, electron energydistribution, gas macro temperature and uniformity at the same time due to an unstable discharge stage during mode conversion. The high-density plasma jet generating device includes a frustum-shapedquartz cavity. The quartz cavity is divided into two parts along the axial direction, wherein the head end area close to the small port is a plasma generation area, and the tail end area close to thelarge port is a plasma acceleration area. The working gas is broken down in the plasma generation area to generate a seed electron, and the seed electron generates high-density plasma under the actionof a rotating magnetic field. The plasma is stretched to the plasma acceleration region for acceleration to form a plasma jet which is sprayed into a vacuum gas chamber.

A method of accelerating charged particles in a plasma and an associated plasma accelerator and electromagnetic radiation source, the method including creating a region of non-uniform electric field within the plasma which propagates through the plasma; using the non-uniform electric field to accelerate a first plurality of charged particles in the direction of propagation of the region of non-uniform electric field; and once the accelerating first plurality of charged particles have propagated part-way through the plasma: adding a second plurality of charged particles to the plasma, such that the second plurality of charged particles propagates through the plasma, the second plurality of charged particles create a local distortion in the non-uniform electric field experienced by the accelerating first plurality of charged particles, and the local distortion in the non-uniform electric field propagates through the plasma with the accelerating first plurality of charged particles; and the method also including using the local distortion in the non-uniform electric field to accelerate the first plurality of charged particles in the direction of propagation of the region of non-uniform electric field.

Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.