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High-density plasma jet generating device based on reversed field configuration structure of current driving technology

A plasma and current-driven technology, applied in the direction of plasma, electrical components, etc., can solve the problems of unstable discharge stage of plasma source, plasma density, electron energy distribution, gas macroscopic temperature and uniformity that are difficult to meet the requirements at the same time, to achieve The effect of widening the range of operating parameters, avoiding unstable discharge phases, and increasing plasma density

Active Publication Date: 2019-10-15
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to solve the problem that the radio frequency inductively coupled plasma source has an unstable discharge stage during mode conversion, which makes it difficult to meet the requirements of plasma density, electron energy distribution, gas macroscopic temperature and uniformity at the same time

Method used

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  • High-density plasma jet generating device based on reversed field configuration structure of current driving technology
  • High-density plasma jet generating device based on reversed field configuration structure of current driving technology
  • High-density plasma jet generating device based on reversed field configuration structure of current driving technology

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Embodiment

[0040] Embodiment: The vacuum chamber air chamber of the discharge device is composed of the small-end flange cover 2, the large-end flange cover 3 and the frustum-shaped quartz chamber 1, and the frustum-shaped quartz chamber 1 is connected to the small-end flange cover 2 with an outer diameter Φ=150mm, the outer diameter connected with the big end flange cover 3 is Φ=130mm, the wall thickness is d=5mm, and the height is h=300mm; the diameter of the small end flange cover 2 and the big end flange cover 3 is Φ = 330mm, 5mm thick circular No. 304 stainless steel plate; 4 round holes with a diameter of Φ = 8mm are evenly opened at the position of 20mm from the edge of the small end flange cover 2 and the large end flange cover 3, and a long rod is used to The bolts are strengthened; an air inlet hole 204 with a diameter of Φ=4mm is opened at the center of the left end cover to install the air nozzle for air intake; at the position of 10mm outside the connection end of the small e...

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Abstract

The invention relates to a high-density plasma jet generating device based on the reversed field configuration structure of the current driving technology, which belongs to the technical field of application of low-temperature plasma. The invention aims to solve the problem that a radio frequency inductively coupled plasma source can hardly meet the requirements for plasma density, electron energydistribution, gas macro temperature and uniformity at the same time due to an unstable discharge stage during mode conversion. The high-density plasma jet generating device includes a frustum-shapedquartz cavity. The quartz cavity is divided into two parts along the axial direction, wherein the head end area close to the small port is a plasma generation area, and the tail end area close to thelarge port is a plasma acceleration area. The working gas is broken down in the plasma generation area to generate a seed electron, and the seed electron generates high-density plasma under the actionof a rotating magnetic field. The plasma is stretched to the plasma acceleration region for acceleration to form a plasma jet which is sprayed into a vacuum gas chamber.

Description

technical field [0001] The invention belongs to the application technical field of low-temperature plasma, and relates to a large-area, high-density, uniform and stable plasma jet generating device that can be used for low pressure generation. Background technique [0002] Material surface modification and surface treatment processes have been widely used in the global manufacturing industry. In the field of material surface treatment, traditional processes mainly use methods such as thermal spray treatment, laser treatment, electroplating / electroless plating, etc., and a lot of progress has been made. However, with the increasing industrial demand, higher requirements are put forward for new properties, new structures and spatial scales of materials. For example, in the manufacturing process of microelectronic chips, in order to improve the computing efficiency of electronic chips, it is necessary to perform effective etching on large-area wafers. The current etching groov...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/30
CPCH05H1/30
Inventor 张仲麟孙宇飞
Owner HARBIN INST OF TECH
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