1411 results about "Switched current" patented technology

A transmitter antenna assembly for transient electromagnetic well logging instrument comprises an antenna coil coupled with a current source and a magnetic core having residual magnetization. Switching current in the antenna coil results in magnetization reversal in the magnetic core and change in magnetic dipole moment of the antenna. After the magnetization reversal is complete the current is removed and the new vector of magnetic dipole of the antenna maintains constant (steady-state phase of the antenna dipole) due to magnetic hysteresis of magnetic material employed for the magnetic core. No power expenditure during the steady-state phase of the magnetic dipole facilitates highly effective generation and fast switching of a large magnetic dipole. The magnetic core also serves as a shield between the antenna coil and any conductive part of the antenna assembly. Embodiments suitable for measurement-while-drilling or measurements through casing make use of residual magnetization of magnetic drill collar or magnetic casing respectively.

DC input energy is converted into DC output voltage by the use of a switched current mode high-voltage power supply. Pulses of input current are switched through a conversion transformer and the energy content of each pulse is converted into the DC output voltage. The time widths of the input current pulses are regulated relative to the DC input and output voltages, the magnitude of the current within each input current pulse, and in relation to maintaining a plurality of different selected operational conditions. The rate at which the input current pulses are converted is changed relative to the level of the DC output voltage.

A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co₂₀Fe₆₀B₂₀. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

One embodiment of the present invention includes a memory element having a composite free layer including a first free sub-layer formed on top of the bottom electrode, a nano-current-channel (NCC) layer formed on top of the first free sub-layer, and a second free sub-layer formed on top of the NCC layer, wherein when switching current is applied to the memory element, in a direction that is substantially perpendicular to the layers of the memory element, local magnetic moments of the NCC layer switch the state of the memory element.

A magnetic random access memory device comprises a spin torque MRAM cell (100) having a reduced switching current (I_c) wherein standard materials may be used for a free layer (108). A fixed magnetic element (112) polarizes electrons passing therethrough, and the free magnetic element (108) having a first plane anisotropy comprises a first magnetization (130) whose direction is varied by the spin torque of the polarized electrons. An insulator (110) is positioned between the fixed magnetic element (112) and the free magnetic element (108), and a keeper layer (104) positioned contiguous to the free magnetic element (108) and having a second plane anisotropy orthogonal to the first plane anisotropy, reduces the first plane anisotropy and hence reduces the spin torque switching current (I_c). The keeper layer (104) may comprise alternating synthetic antiferromagnetic layers (132, 134) of magnetization approximately equal in magnitude and opposite in direction.

A dual-mode pulse frequency modulation boost converter operates in a hysteretic mode during light load currents to regulate an output voltage using a substantially fixed peak switching current and operates in a continuous mode during heavy load currents to regulate the output voltage using a variable peak switching current. The boost converter senses load power to automatically switch between the hysteretic mode and the continuous mode.

This application describes a method of forming a switching device. The method includes forming a first dielectric material overlying a surface region of a substrate. A bottom wiring material is formed overlying the first dielectric material and a switching material is deposited overlying the bottom wiring material. The bottom wiring material and the switching material is subjected to a first patterning and etching process to form a first structure having a top surface region and a side region. The first structure includes at least a bottom wiring structure and a switching element having a top surface region including an exposed region of the switching element. A second dielectric material is formed overlying at least the first structure including the exposed region of the switching element. The method forms a first opening region in a portion of the second dielectric layer to expose a portion of the top surface region of the switching element. A dielectric side wall structure is formed overlying a side region of the first opening region. A top wiring material including a conductive material is formed overlying at lease the top surface region of the switching element such that the conductive material is in direct contact with the switching element. The side wall spacer reduces a contact area for the switching element and the conductive material and thus a reduced active device area for the switching device. In a specific embodiment, the reduced area provides for an increase in device ON/OFF current ratio.

A phase locked loop, PLL, is described with multiple parallel charge pumps that are selectively disabled as phase lock is approached. A lock detection circuit is described that enabled reference currents to be fed to the parallel charge pumps. The error signal from a phase detector is arranged as UP and a DOWN signals that are averaged in the lock detector. When the average error is large, all the reference currents feed the charge pumps that provide a high loop gain to reduce the lock time. As the lock becomes closer selective reference currents are disabled to reduce loop gain so that a smooth transition to lock is made. Selectively switching currents into a low pass filter that usually follows a charge pump in a PLL circuit automatically reduces switching noise by the operation of the low pass filter.

A switched current temperature sensing circuit (1) comprises a measuring transistor (Q1) which is located remotely of a measuring circuit (5) which applies three excitation currents (I₁,I₂,I₃) of different values to the measuring transistor (Q1) in a predetermined current sequence along lines (10,11). Resulting base/emitter voltages from the measuring transistor (Q1) are applied to the measuring circuit (5) along the same two lines (10,11) as the excitation currents are applied to the measuring transistor (Q1). Voltage differences ΔV_be of successive base/emitter voltages resulting from the excitation currents are integrated in an integrating circuit (36) of the measuring circuit (5) to provide an output voltage indicative of the temperature of the measuring transistor (Q1). By virtue of the fact that the measuring transistor (Q1) is excited by excitation currents of three different values, the effect of current path series resistance in the lines (10,11) on the output voltage indicative of temperature is eliminated. The predetermined current sequence in which the excitation currents are applied to the measuring transistor (Q1) is selected to minimize the voltages in the integrating circuit (36) during integration of the voltage differences ΔV_be.

A decoupled switched current temperature circuit with compounded DELTA Vbe includes an amplifier having an inverting input with corresponding non-inverting output and a non-inverting input with a corresponding inverting output; a PN junction connected to the non-inverting input through a first input capacitor and a voltage reference circuit is connected to the inverting input through a second input capacitor; a current supply includes a low current source and a high current source; a switching device applies the high current source to the PN junction and applies the low current source to the PN junction for providing the DELTA Vbe of the PN junction to the first capacitor; a first feedback capacitor is interconnected between the inverting output and the non-inverting input and a second feedback capacitor is interconnected between the non-inverting output and inverting input of the amplifier to define the gain on each of the inputs to produce a differential voltage across the outputs representative of the temperature of the PN junction; first and second reset switching devices discharge the first and second feedback capacitors, respectively, and a multi-phase switched device alternately interchanges the connection of the first and second input capacitors with the amplifier inputs for compounding the single DELTA Vbe .

A dual-mode pulse frequency modulation boost converter operates in a hysteretic mode during light load currents to regulate an output voltage using a substantially fixed peak switching current and operates in a continuous mode during heavy load currents to regulate the output voltage using a variable peak switching current. The boost converter senses load power to automatically switch between the hysteretic mode and the continuous mode.

A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction having a first magnetic body including a perpendicular magnetization film, an insulating layer, and a second magnetic body serving as a storage layer including a perpendicular magnetization film, which are sequentially stacked. A thermal expansion layer is disposed in contact with the magnetic tunnel junction portion. The second magnetic body is deformed in a direction in which the cross section thereof increases or decreases by the thermal expansion or contraction of the thermal expansion layer due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction.

System and method for improving efficiency in driving LEDs. A preferred embodiment comprises a switch current regulator coupled to a current control signal input, the switch current regulator to control an amount of current provided to the LED based upon a magnitude of a voltage on the current control signal input, a switching voltage regulator coupled to the switch current regulator and the LED, the switching voltage regulator to provide current to the LED, and a sensor coupled to the switch current regulator, the LED, and a signal feedback circuit, the sensor to measure status information regarding the switch current regulator and the LED and provides the information to a controller, wherein the status information can be used to adjust the current on the current control signal input.