9 results about "Perpendicular anisotropy" patented technology

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

The invention relates to a perpendicular anisotropic magnetic memory based on rare earth doped antiferromagnetic, which comprises a thin film structure, and the thin film structure sequentially comprises a buffer layer, a heavy metal layer, a perpendicular magnetic anisotropic layer, a rare earth doped antiferromagnetic layer and a protective layer from bottom to top, according to the invention, the magnetic texture is changed by doping rare earth elements into the collinear antiferromagnetic to break the symmetry of the system, and the spin-orbit torque is utilized to drive the magnetic state of the memory device with perpendicular magnetic anisotropy to overturn only by means of current under the condition of no external field assistance. The method provides a new implementation path for a low-power-consumption and high-density spin storage technology, has a good application prospect, and is expected to promote actual development and application of novel magnetic storage devices in the future.

This invention discloses a SOT-MRAM device, belonging to the field of magnetic random access memory technology. The SOT-MRAM device includes, from bottom to top, a bottom electrode, a spin orbital layer, a magnetic tunnel junction, an antiferromagnetic coupling layer, and a top electrode. The current propagation direction in the spin orbital layer is the same as its own long axis direction. The magnetic moment of the magnetic tunnel junction is perpendicular to its own film surface direction. The magnetic tunnel junction includes a free layer with bulk vertical anisotropy. An inclined sidewall is formed on one side of the free layer using an etching process, creating a continuous thickness gradient along the short axis of the spin orbital layer. This invention introduces structural asymmetry through the thickness gradient of the free layer, breaking the symmetry and replacing the effect of the traditional external magnetic field to achieve zero-magnetic-field flipping.

The application provides a magnetic tunnel junction device, comprising: a reference layer, a barrier layer, a free layer and a cap layer which are sequentially stacked, the reference layer has a fixed magnetization which is substantially perpendicular to the plane of the reference layer, the free layer comprises: a first ferromagnetic layer, a second ferromagnetic layer and an antiferromagnetic coupling layer between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer is adjacent to the barrier layer, the first ferromagnetic layer has a magnetization which is perpendicular to the film surface and can be reversed, and the second ferromagnetic layer has a magnetization which is opposite to the magnetization direction of the first ferromagnetic layer. And a spacer layer is arranged between the two ferromagnetic layers of the free layer and the antiferromagnetic coupling layer or between the two ferromagnetic layers, so as to improve the saturation magnetization of the free layer. The magnetic tunnel junction device of the application has high perpendicular anisotropy and low switching current.

A non-volatile magnetoresistive random-access memory device is provided. The device comprises a three-terminal spin-orbit torque magnetic tunnel junction (MTJ) with perpendicular anisotropy. The MTJ comprises a fixed ferromagnetic layer, a free ferromagnetic layer, a tunnel barrier between the fixed and free ferromagnetic layers, and a heavy metal layer under the free ferromagnetic layer. A read access transistor is connected to a first terminal of the fixed magnetic layer. A write access transistor is connected to a second terminal of the heavy metal layer. A ground voltage is connected to a third terminal of the heavy metal layer. A read bit line is connected to the read access transistor, and a read word line is connected to the gate of the read access transistor. A write bit line is connected to the write access transistor, and a write word line is connected to the gate of the write access transistor.

The present disclosure provides a hard magnetic material with strong perpendicular magnetic anisotropy and preparation and application thereof, a general formula of the hard magnetic material with strong perpendicular magnetic anisotropy is R x A 1‑x BO 2.5 , wherein the R is a lanthanide element; the value of x is within 0.01 to 0.50; the A is selected from the group of group IIA main group elements, and the B is selected from the group of 3d transition metal elements; the atomic structure of the material is an alternately stacked structure of one layer of B-O tetrahedron and one layer of B-O octahedron, observed along the c-axis direction of the crystal structure. The hard magnetic material has strong magnetic anisotropy, and the strong magnetic anisotropy and saturation magnetization of the material can be controllably modulated.

A non-volatile magnetoresistive random-access memory device is provided. The device comprises a three-terminal spin-orbit torque magnetic tunnel junction (MTJ) with perpendicular anisotropy. The MTJ comprises a fixed ferromagnetic layer, a free ferromagnetic layer, a tunnel barrier between the fixed and free ferromagnetic layers, and a heavy metal layer under the free ferromagnetic layer. A read access transistor is connected to a first terminal of the fixed magnetic layer. A write access transistor is connected to a second terminal of the heavy metal layer. A ground voltage is connected to a third terminal of the heavy metal layer. A read bit line is connected to the read access transistor, and a read word line is connected to the gate of the read access transistor. A write bit line is connected to the write access transistor, and a write word line is connected to the gate of the write access transistor.

This invention discloses a magnetic tunnel junction with low power consumption and high storage density, comprising a free layer and a barrier layer, with an interface formed between the free layer and the barrier layer. A ring-shaped defect structure is formed at the edge of the interface by etching. This structure has a ring-shaped defect structure at the interface between the free layer and the barrier layer. The interface-induced vertical anisotropy of the ring-shaped defect structure is low, thereby reducing the overall vertical anisotropy of the free layer. Simultaneously, an in-plane magnetization direction is formed at the edge of the magnetic tunnel junction, which helps to reduce the critical switching current and improve the magnetic switching speed, storage density, and operating speed, while reducing power consumption.

The invention provides an auxiliary device and a preparation method of a perpendicular anisotropic inclined magnetic layer, and belongs to the technical field of magnetic storage. The auxiliary device comprises a shielding unit, a first sputtering target gun, a second sputtering target gun, a movable sliding rail, a fixing clamp, a substrate tray, a stepping motor and a controller; the shielding unit comprises a shielding plate, a connecting rod and a fixing buckle; the shielding unit is fixed on a gun barrel of the first sputtering target gun through a fixing buckle, the fixing buckle is connected with one end of a connecting rod, and the other end of the connecting rod is connected with a shielding plate; the shielding plate is located between a gun barrel of the first sputtering target gun and the substrate tray, a hollowed-out slit is formed in the shielding plate face in the substrate direction, and the hollowed-out slit is used for limiting the emitting angle and the sputtering area of sputtering particles from a first target after penetrating through the hollowed-out slit; the stepping motor and the controller are connected with the movable sliding rail. The preparation method can be used for preparing a large-area uniform perpendicular anisotropic inclined magnetic layer.