51 results about "Dead layer" patented technology

A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×10⁶ A/cm² is disclosed. The MTJ has a Co₆₀Fe₂₀B₂₀/MgO/Co₆₀Fe₂₀B₂₀ configuration where the CoFeB AP1 pinned and free layers are amorphous and the crystalline MgO tunnel barrier is formed by a ROX or NOX process. The capping layer preferably is a Hf/Ru composite where the lower Hf layer serves as an excellent oxygen getter material to reduce the magnetic “dead layer” at the free layer/capping layer interface and thereby increase dR/R, and lower He and Jc. The annealing temperature is lowered to about 280° C. to give a smoother CoFeB/MgO interface and a smaller offset field than with a 350° C. annealing. In a second embodiment, the AP1 layer has a CoFeB/CoFe configuration wherein the lower CoFeB layer is amorphous and the upper CoFe layer is crystalline to further improve dR/R and lower RA to ≦10 ohm/μm².

The invention discloses a photoconductive detector based on boron-doped silicon quantum dot/graphene/silicon dioxide and a preparation method thereof. The photoconductive detector includes a p-type silicon substrate, a silicon dioxide isolation layer, a top electrode, a graphene film, a boron-doped silicon quantum dot film and a bottom electrode. The photoconductive detector is capable of carrying out wide-spectrum detection, so that a problem of low response to infrared detection by the traditional silicon-based PIN structure can be solved. Because the graphene is used to form an active layer and a transparent electrode, a dead layer is eliminated and incident light absorption is enhanced. With the silicon dioxide isolation layer, the silicon surface state can be reduced. The detector can work normally at a low bias voltage; the absorbed light of the boron-doped silicon quantum dot layer is converted into photon-generated carriers and the generated photon-generated carriers being hole electron pairs are separated under the effect of the built-in electric field, so that the high gain can be obtained. In addition, the preparation method is simple; the cost is low; the response degree is high; the response speed is fast; the internal gain is high; the switch ratio is low; and integration is easy to realize.

The invention discloses a removing method of diffusing dead layers of a crystalline silicon solar cell, which comprises the following steps of screen coating a layer of corrosive slurry on a surface of a silicon slice after diffusion in a screen printing mode and drying the slurry; and removing the corrosive slurry. The corrosive slurry comprises the following components: by mass, 10-50% of quaternary ammonium hydroxide, 10-40% of terpinol and 10-50% of ethyl cellulose. The viscosity of the corrosive slurry ranges from 100 Pa s to 300 Pa s. According to the removing method of diffusing dead layers of the crystalline silicon solar cell, the surface of the silicon slice after diffusion which is performed a phosphorosilicate glass removing process is corroded, a layer of silicon face is etched off, a diffusing dead layer is removed, reduce recombination of surface high concentration diffusion layers is reduced, and short wave response is improved. Tests show that if the method is used, short-circuit current of the solar cell can be improved by 30-60 mA, and photoelectric efficiency of the cell can be improved by 0.1% to 0.2%.