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Back contact crystalline silicon heterojunction solar cell and preparation method thereof

A technology for solar cells and crystalline silicon, applied in the field of solar cells, can solve problems such as poor stability, and achieve the effect of simple process and suitable for large-scale production

Inactive Publication Date: 2018-07-24
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But MoO 3 and V 2 o 5 Poor stability of transition metal oxides such as Mo and V and belong to metal rare elements

Method used

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  • Back contact crystalline silicon heterojunction solar cell and preparation method thereof
  • Back contact crystalline silicon heterojunction solar cell and preparation method thereof
  • Back contact crystalline silicon heterojunction solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A back-contact crystalline silicon heterojunction solar cell, the solar cell comprising: a silicon substrate 1, a passivation layer 2, an antireflection film 3, a metal oxide reflector 4, a metal electrode 6, LiF x Film 5, the passivation layer 2 includes the first passivation layer and the second passivation layer, the material of the passivation layer 2 is SiO 2 .

[0039] The first passivation layer is deposited on the upper surface of the silicon substrate 1 .

[0040] The antireflection film is deposited 3 on the upper surface of the first passivation layer.

[0041] The second passivation layer is deposited on the lower surface of the silicon substrate 1, and the silicon substrate 1 is a single crystal silicon wafer.

[0042] The metal oxide reflector 4 is deposited on one end of the lower surface of the second passivation layer, and the LiF x A thin film 5 is deposited on the other end of the lower surface of the second passivation layer.

[0043] The metal e...

Embodiment 2

[0058] A back-contact crystalline silicon heterojunction solar cell, the solar cell comprising: a silicon substrate 1, a passivation layer 2, an antireflection film 3, a metal oxide reflector 4, a metal electrode 6, LiF x Film 5, the passivation layer 2 includes the first passivation layer and the second passivation layer, the material of the passivation layer 2 is Al 2 o 3 .

[0059] The first passivation layer is deposited on the upper surface of the silicon substrate 1 .

[0060] The antireflection film is deposited 3 on the upper surface of the first passivation layer.

[0061] The second passivation layer is deposited on the lower surface of the silicon substrate 1, and the silicon substrate 1 is a single crystal silicon wafer.

[0062] The metal oxide reflector 4 is deposited on one end of the lower surface of the second passivation layer, and the LiF x A thin film 5 is deposited on the other end of the lower surface of the second passivation layer.

[0063] The met...

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Abstract

The invention discloses a back contact crystalline silicon heterojunction solar cell. The solar cell comprises a silicon substrate, a first passivation layer, a second passivation layer, an antireflection film, a metal oxide reflector, a metal electrode and a LiFx film. The first passivation layer is deposited on the upper surface of the silicon substrate. The antireflection film is deposited on the upper surface of the first passivation layer. The second passivation layer is deposited on the lower surface of the silicon substrate. The metal oxide reflector is deposited on one end of the lowersurface of the second passivation layer. The LiFx film is deposited on the other end of the lower surface of the second passivation layer. The metal electrode is evaporated on the lower surface of the metal oxide reflector and the LiFx film. A gap is arranged between the metal oxide reflector and the LiFx film. The metal oxide reflector is the positive electrode of the solar cell. The metal electrode is the negative electrode of the solar cell. The metal oxide reflector is arranged so that the problems of parasitic absorption, auger recombination and "dead layer" caused by the emitter can beavoided.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a back contact crystalline silicon heterojunction solar cell and a preparation method. Background technique [0002] Back-contact heterocrystalline solar cells are closer to the theoretical limit conversion efficiency of silicon-based cells. In order to improve the conversion efficiency of back-contact heterogeneous crystal solar cells, the technical means of doping intrinsic amorphous silicon is usually used in this field. However, there is a phenomenon of parasitic absorption in doped amorphous silicon, and the use of flammable and explosive Gas, with the increase of doping concentration, the density of defect states at the contact interface between silicon and amorphous silicon increases, which reduces the open circuit voltage. [0003] At present, transition metal oxides, as hole-selective materials, electron-selective materials and passivation layer materials, are combined with c...

Claims

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Application Information

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IPC IPC(8): H01L31/074H01L31/0336H01L31/0216H01L31/18
CPCH01L31/02167H01L31/0336H01L31/074H01L31/18Y02E10/50Y02P70/50
Inventor 沈辉林文杰梁宗存吴伟梁包杰刘宗涛赵影文
Owner SUN YAT SEN UNIV
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