105 results about "Silicon heterojunction" patented technology

A laser cutting and passivating method for a silicon heterojunction solar cell (10), comprising: first performing laser grooving positioning on a surface to be cut of the silicon heterojunction solar cell (10) to form at least one pair of grooves: a first cutting positioning groove (11) and a second cutting positioning groove (12) which are provided opposite to each other; and then, along a line connecting the first cutting positioning groove (11) and the second cutting positioning groove (12), performing laser cutting on said surface, and performing solution spraying passivation treatment on an area irradiated by a laser. The method simultaneously performs laser cutting and passivation treatment, and while improving the photoelectric conversion efficiency of the solar cell by successfully passivating the cut position, the method also simplifies the technological process and improves the production efficiency.

The invention provides a heterojunction quantum well and a preparation method thereof, and the method comprises the steps: providing a substrate, and forming a heterojunction quantum well at one side of the substrate through a chemical vapor deposition method; the heterojunction quantum well comprises a first barrier layer, a quantum well layer and a second barrier layer which are stacked in sequence, the first barrier layer is located between the quantum well layer and the substrate, the first barrier layer and the second barrier layer are both made of germanium-silicon, when the heterojunction quantum well is a silicon heterojunction quantum well, the quantum well layer is a silicon quantum well layer, and when the heterojunction quantum well is a silicon quantum well layer, the second barrier layer is a silicon quantum well layer. When the heterojunction quantum well is a germanium heterojunction quantum well, the quantum well layer is a germanium quantum well layer; in the process of forming the heterojunction quantum well, the precursor is decomposed in a target temperature range, and a product obtained through decomposition is deposited on one side of the substrate to obtain the heterojunction quantum well; the precursor is subjected to multi-stage reaction during decomposition, and the target temperature range is 300-550 DEG C; the interface quality of the heterojunction quantum well can be greatly improved, the surface roughness of the film layer can be reduced, and high-quality preparation of the heterojunction quantum well is realized.

The invention belongs to the technical field of silicon heterojunction solar cells, and discloses a preparation method of a distributed photovoltaic module and a preparation method of a single-sided heterojunction solar cell. According to the preparation method disclosed by the invention, the back seed layer of the copper gate heterojunction cell is reserved by removing copper through single-side etching, the back reflection of the heterojunction cell is greatly improved through the reservation of the metal seed layer, the utilization rate of sunlight long-wave band light by the cell is increased, the short-circuit current can be effectively improved by 20-50mA, and the efficiency gain of the cell is about more than 0.2%.

The invention relates to the technical field of solar cells, in particular to a silicon heterojunction solar cell and a preparation method thereof, a dielectric anti-reflection passivation layer and a functional layer are arranged on a light receiving surface of a substrate side by side, a front transparent conductive oxide layer is arranged on the functional layer, a front electrode is arranged on the front transparent conductive oxide layer, and a back electrode is arranged on the back transparent conductive oxide layer. The front transparent conductive oxide layer is wider than the front electrode. The dielectric antireflection passivation layer is arranged in a large area, the passivation effect similar to that of the functional layer is provided through the high thickness, transverse transmission of carriers is greatly reduced through the dielectric property of the dielectric antireflection passivation layer, the area of the functional layer can be reduced, and therefore the use area of the front transparent conductive oxide layer is reduced.

The invention relates to the technical field of solar cells, and discloses an all-inorganic perovskite-silicon heterojunction laminated solar cell and a preparation method thereof.The preparation method comprises the steps that a silicon-bottom cell is provided, the silicon-bottom cell comprises a silicon wafer, a first intrinsic passivation layer on one side of the silicon wafer, an n-type doping layer and a tunneling conducting layer, the second intrinsic passivation layer, the p-type doping layer and the first transparent electrode are arranged on the other side of the silicon wafer; at least the surface, on one side of the tunneling conductive layer, of the silicon-bottom cell is a suede; forming a hole transport layer on the surface of one side, opposite to the n-type doped layer, of the tunneling conductive layer; forming a full-inorganic perovskite layer on the surface of one side, opposite to the tunneling conductive layer, of the hole transport layer by adopting an electrochemical deposition process; and sequentially forming an electron transport layer and a second transparent electrode on the surface of the all-inorganic perovskite layer. According to the invention, the process difficulty of forming the all-inorganic perovskite thin film on the suede can be reduced, the uniformity and the bonding property of the all-inorganic perovskite layer are improved, and the reliability, the stability and the electrical property of the solar cell are further improved.

The invention relates to the technical field of solar cells, in particular to a low-cost silicon heterojunction solar cell and a preparation method thereof, a light receiving surface of the low-cost silicon heterojunction solar cell comprises a microcrystalline silicon film and a metal electrode, a front transparent conductive film is arranged on the microcrystalline silicon film below the metal electrode, and anti-reflection films are arranged on other microcrystalline silicon films. The front transparent conductive film is arranged below the metal electrode, so that compared with a conventional heterojunction solar cell, the area of the front transparent conductive film is reduced, and the production cost is greatly reduced.

The present invention relates to the technical field of solar cells, and particularly relates to a perovskite / silicon heterojunction tandem solar cell and a preparation method thereof. The solar cell includes a silicon-based sub-cell and a perovskite sub-cell laminated on the silicon-based sub-cell, where intermediate layers or recombination junctions formed by a p-type heavily-doped amorphous silicon layer and an n-type heavily-doped amorphous silicon layer are arranged between the silicon-based sub-cell and the perovskite sub-cell. According to the present invention, through the use of the p-type heavily-doped amorphous silicon layer and the n-type heavily-doped amorphous silicon layer as a carrier recombination junction, on the one hand, the preparation and equipment costs are greatly reduced, and on the other hand, the photocurrent density and conversion efficiency of the tandem cell can be improved.

This invention discloses a machine learning-based method for parameter prediction and fabrication of compound silicon heterojunction solar cells, belonging to the field of silicon heterojunction solar cells. The J-V parameters of the solar cell are used as input features, and fabrication and performance parameters are used as target labels. A variational autoencoder is used to learn the latent representation of the data, and adversarial examples are generated by calculating the gradient of the input features relative to the model loss. A multilayer perceptron network incorporating a multi-head self-attention mechanism and L2 regularization is constructed, and adversarial training is performed using an enhanced training set to accurately predict the optimal UV / ozone treatment time and cell performance parameters. The intrinsic hydrogenated amorphous silicon / silicon oxide composite passivation layer is fabricated using the optimal UV / O3 treatment time. This invention, driven by machine learning, effectively captures the complex nonlinear relationships between parameters, improves the prediction accuracy of process parameters, and shortens the R&D cycle. It also effectively suppresses atomic diffusion between intrinsic hydrogenated amorphous silicon and the molybdenum oxide transport layer, improving cell performance.

The invention relates to a texturing agent composition of a silicon wafer for a monocrystalline silicon heterojunction solar cell. The texturing agent composition comprises the following components based on the total weight of the texturing agent composition: 0.01-10 wt% of an anionic surfactant; 0.001 to 15 wt% of a nonionic surfactant; 0.001 to 5 wt% of a nucleating agent; 0.0001 to 10 wt% of a dispersant; and water. The texturing agent composition disclosed by the invention comprises an anionic surfactant, a nonionic surfactant, a nucleating agent (an amino polysaccharide polymer) and a dispersing agent (an aromatic ring formaldehyde condensate), and the texturing agent composition is prepared into a texturing solution for silicon wafer texturing. Under the compounding condition of the components, on one hand, a novel flower-bud-shaped multilayer pyramid suede microstructure can be formed on the surface of a silicon wafer, and the reflectivity of the surface of the silicon wafer is reduced; and on the other hand, the textured silicon wafer is highly matched with the HJT battery, so that the photoelectric conversion efficiency of the HJT battery can be remarkably improved. Therefore, the texturing technology can be effectively applied to large-scale production of solar cells.

The invention provides a silicon heterojunction cell, a preparation method and a photovoltaic module, and the method comprises the following steps: heating a pretreated substrate under a vacuum condition, and obtaining a heated substrate; sequentially growing an intrinsic amorphous silicon passivation layer, n-type doped hydrogenated microcrystalline silica, a transparent oxide conductive film and a metal electrode on the front surface of the heated substrate by adopting a chemical deposition method; sequentially growing an intrinsic amorphous silicon passivation layer, three p-type selective contact layers, a transparent oxide conductive film and a metal electrode on the back surface of the heated substrate by adopting a chemical deposition method; the three p-type selective contact layers comprise a p-type hydrogenated microcrystalline silicon layer, a CO2 lightly doped p-type hydrogenated microcrystalline silicon oxygen layer and a CO2 heavily doped p-type hydrogenated microcrystalline silicon oxygen layer; the three p-type selective contact layers constructed by the invention can provide excellent conductivity, transmittance and contact performance, and the filling factor of the cell is improved, so that the photoelectric conversion efficiency of the cell is improved.

The present application relates to the technical field of solar cells, in particular to a preparation of a laminated conductive film and its application in a crystalline silicon heterojunction solar cell, a transparent conductive film and a silicon film are prepared in sequence by magnetron sputtering technology to form a laminated conductive film, the preparation process is simple and efficient, and the conductive performance is significantly improved in the air environment and the heat treatment process. The laminated conductive film has good heat resistance in the air atmosphere, and after heat treatment at 100 DEG C-400 DEG C, the conductive performance is not only not attenuated but also improved, and the laminated film structure improves the stability of the transparent conductive film in acidic substances. The laminated conductive film is applied in a crystalline silicon heterojunction solar cell, the preparation process is simple, the production line has good compatibility, the service life of the heterojunction solar cell can be effectively prolonged, the reliability of the solar cell in long-term work is improved, the low packaging cost is maintained, and the application is suitable for large-scale production of high-efficiency and long-life heterojunction solar cells.

The present disclosure discloses a high-efficiency silicon heterojunction (HJT) solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. In the solar cell of the present disclosure, an N-type crystal silicon wafer is successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer, and an electrode on a front surface; and successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode on a rear surface. The amorphous silicon doped P-type layer includes a lightly boron doped amorphous silicon layer and a heavily boron doped amorphous silicon layer.

The invention discloses a method for improving the photoelectric property of a transparent conductive oxide film and application, and belongs to the field of optoelectronic devices. The method comprises the following steps: growing a transparent conductive oxide film (TCO), a glass substrate or a silicon substrate by using a magnetron sputtering technology (or a reaction plasma deposition technology); and growing a gradient refractive index SiNyOx / SiOx thin film on the TCO thin film by using a radio frequency magnetron sputtering technology so as to construct the composite thin film (TCO / SiNyOx / SiOx) and improve the optical transmittance and the electrical stability of the TCO thin film. According to the invention, the optical and electrical properties of the transparent conductive oxide film can be improved, the transmission of the film is enhanced, the reflection is reduced, and the transparent conductive oxide film can be applied to crystalline silicon heterojunction solar cells or other optoelectronic devices and the like.

The present application discloses a stacked solar cell and a preparation method thereof, which relates to the technical field of solar cells, including: a silicon heterojunction solar cell; a perovskite solar cell located on the light-incident side of the silicon heterojunction solar cell; the silicon heterojunction solar cell includes: a crystalline silicon substrate, the crystalline silicon substrate having a first surface and a second surface opposite to each other, the first surface facing the perovskite solar cell; a first organic passivation layer located on the first surface; a second organic passivation layer located on the second surface; a hole selection contact layer located on the surface of the first organic passivation layer, the hole selection contact layer and the first organic passivation layer and the first surface of the crystalline silicon substrate form a first heterojunction; an electron selection contact layer located on the surface of the second organic passivation layer, the electron selection contact layer and the second organic passivation layer and the second surface of the crystalline silicon substrate form a second heterojunction. The technical solution of the present application can reduce parasitic absorption, reduce the difficulty of the passivation process and the preparation cost.

According to the photodiode structure, the preparation method thereof and the CMOS image sensor, the perovskite / silicon heterojunction is constructed in the photodiode structure, and the spectral response range is remarkably expanded by using the high absorption coefficient of perovskite in an ultraviolet-visible region and the light absorption advantage of silicon in a near-infrared region; after photons irradiate on the silicon and the perovskite light absorption layer to excite and generate photo-induced electron-hole pairs, holes in the perovskite light absorption layer are extracted by the photo-induced hole transport layer, photo-induced electrons enter the N-well region through the electron transport layer, the photo-induced holes in the silicon diffuse and drift to the P-type substrate, and the photo-induced electrons are collected and temporarily stored in the N-well region; the compound probability of photon-generated carriers is effectively reduced, the photoelectric response speed is increased, the preparation process is simple, the method can be compatible with an existing CMOS process technology, large-area manufacturing is easy to achieve, the manufacturing cost is reduced, and the method has great significance in promoting development of a next-generation wide-spectrum and high-sensitivity image sensor.

The invention belongs to the technical field of semiconductors and micro-nano photoelectrons, and particularly discloses a silicon-Dirac semimetal heterojunction avalanche photodetector integrated with a metal nano filtering structure and a preparation method of the silicon-Dirac semimetal heterojunction avalanche photodetector, and the silicon-Dirac semimetal heterojunction avalanche photodetector sequentially comprises a metal nano structure layer, a Dirac semimetal-silicon heterojunction layer, a multiplication layer and a substrate layer from top to bottom. According to the photoelectric detector prepared by the invention, the expansion of a near-infrared band and the enhancement of the photoelectric response of a visible light band are realized through the silicon-Dirac semimetal layer heterojunction. The metal nanostructure realizes response to a target narrow-band wave band of incident light, and has the advantages of selectable wavelength, miniaturization, easy integration and the like.

The present invention provides a perovskite / silicon heterojunction tandem solar cell without an ITO electrode and a preparation method thereof. The anti-reflection thin film, the first electrode, the perovskite solar cell, the silicon heterojunction solar cell and the second electrode are sequentially arranged in the present invention. The anti-reflection layer provided by the present invention can reduce light reflection and increase light absorption; the first electrode provided is a metal grid silver nanowire electrode. By using the consistency of the metal grid and the good transmittance of the silver nanowires, more light can be incident and transmitted through the electrode, increasing the light absorption rate of the device. Secondly, in the perovskite solar cell, a double electron transport layer and a double hole transport layer are provided to optimize the parasitic light absorption caused by the introduction of the interface layer, improving the stability of the device. In addition, an optical microcavity structure is adopted in the silicon heterojunction solar cell. Under this structure, the solar cell can obtain a higher conversion efficiency and perform more excellently in terms of optoelectronic performance.

The invention relates to the technical field of solar cells, and particularly discloses a low-temperature solder grid line silicon heterojunction solar cell and a preparation method thereof. According to the solar cell, an alloy film transition layer is arranged between the surface of a silicon heterojunction solar cell and a low-temperature solder grid line; the alloy film transition layer comprises the following components in percentage by mass: 95-100% of copper and / or nickel and 0-5% of tin; the alloy film transition layer grows by an ion sputtering deposition method, and the thickness of the transition layer is 20-100 nm; the low-temperature welding flux is low-melting-point alloy welding flux; the low-melting-point alloy comprises the following components in percentage by mass: 40-99% of tin, 0-40% of lead and 0-1% of copper. By applying the method, rare noble metal indium does not need to be introduced into the solder, and silver-free manufacturing of the SHJ solar cell can be achieved under the condition that the advantages of a silk-screen printing grid line preparation process are kept.

The application discloses a kind of little indium little silver silicon heterojunction solar cell, comprising: silicon substrate, intrinsic hydrogenated amorphous silicon a-Si:H (i) sequentially arranged in substrate front surface from inside to outside, phosphorus-doped nanometer silicon oxide film nc-SiO x :H (n), front transparent conductive oxide three-layer, reflection-reducing layer SiN x :H and front electrode, intrinsic hydrogenated amorphous silicon a-Si:H (i) sequentially arranged in substrate back surface from inside to outside, boron-doped nanometer silicon film nc-Si:H (p), back transparent conductive layer AZO and back electrode.The application overcomes the optical loss of ultra-thin ITO and reduces the use of indium, through the design of light-electricity cooperation, while significantly reducing the consumption of rare metal indium and noble metal silver, high conversion efficiency is maintained.

The invention provides a germanium-silicon heterojunction bipolar transistor and a manufacturing method thereof. According to the transistor, a collector region, a field region silicon oxide layer, an outer base isolation layer, an outer base region polycrystalline silicon layer and an emitter region are sequentially formed on a substrate; afterwards, a metal or metal silicide shielding layer is arranged on the first dielectric layer covering the surface of the device, and the shielding layer is located above an area between any two of the collector electrode, the base electrode and the emitter electrode and then is covered by a second dielectric layer. The shielding layer can optimize the electric field distribution between the electrodes, significantly improve the breakdown voltage between the emitter and the base, between the collector and the base and between the collector and the emitter, and enhance the power capability and reliability of the device. Meanwhile, electric field coupling between the electrodes is effectively shielded, and related parasitic capacitance is greatly reduced. The improvement of the breakdown voltage and the reduction of the parasitic capacitance act together, and the current gain cut-off frequency, the maximum oscillation frequency and other core electrical properties of the transistor are directly improved.

A structure of a germanium-silicon heterojunction bipolar transistor and a method for forming the same, wherein the method comprises: providing a substrate, the substrate comprising a base and a collector region on the base, the collector region comprising a first region and a second region on both sides of the first region; forming a main base region on the first region and an outer base region on the second region, the outer base region being on the sidewall surface and part of the top surface of the main base region; and forming an emitter region on part of the surface of the main base region, the emitter region and the outer base region being separated from each other, and the contact area of the outer base region with the main base region being increased, which is conducive to reducing the connection resistance of the outer base region, thereby improving the cutoff frequency of the device and improving the performance of the device.

The application relates to a manganese-cadmium-sulfur / crystalline silicon composite water photolysis photocathode and a preparation method and application thereof. The method is as follows: manganese-cadmium-sulfur nanoparticles with a specific component ratio are synthesized through a hydrothermal method, then a drop-coating process is adopted, and drop-coating process parameters are controlled, so that a manganese-cadmium-sulfur / silicon heterojunction photocathode is successfully constructed on crystalline silicon with a pn junction structure and a surface pyramid light-trapping microstructure. The photocathode has excellent photocatalytic activity and water photolysis efficiency, and has good catalytic stability.

The invention discloses a sandwich silicon-based heterojunction self-energized broadband photoelectric detector based on a Sb2O3 carrier barrier layer and a preparation method thereof, a Sb2O3 intermediate layer is prepared on a cleaned and pre-masked silicon substrate through an electron beam evaporation method to play a carrier blocking role, then a bismuth compound film is prepared on the Sb2O3 layer, and the Sb2O3 intermediate layer and the bismuth compound film are combined to form the Sb2O3 heterojunction self-energized broadband photoelectric detector based on the Sb2O3 carrier barrier layer. And finally, preparing a pair of electrodes on the surfaces of the silicon substrate and the bismuthide film to obtain the bismuthide / Sb2O3 / silicon sandwich heterojunction photoelectric detector. Compared with a bismuth compound / silicon heterojunction detector, the existence of the Sb2O3 carrier barrier layer can effectively reduce dark current and improve light current, excellent detection performance on ultraviolet-visible-infrared bands under the condition of room temperature and without external bias voltage is achieved, the detection rate and responsivity are improved by 2-4 orders of magnitude, the maximum is 1012 Jones and 10 <-1 > A / W, and the detection efficiency and responsivity are improved by 2-4 orders of magnitudes, the maximum is 10 <-1 > Jones and 10 <-1 > A / W. And meanwhile, excellent stability and a unit device imaging function are realized.

The invention discloses a high passivation interlayer of a perovskite / crystalline silicon laminated solar cell, which comprises a conductive transition metal oxide layer and an interface conductive layer which are arranged between a perovskite top cell and a crystalline silicon bottom cell, and the conductive transition metal oxide layer is deposited on a heavily doped silicon layer of the crystalline silicon bottom cell. An interface conductive layer is deposited over the conductive transition metal oxide layer. The double-layer structure of the conductive transition metal oxide layer / interface conductive layer is used as the intermediate layer of the perovskite / crystalline silicon laminated solar cell, the structures of the crystalline silicon bottom cell and the perovskite top cell are not limited, and the compatibility is high; according to the invention, through the non-destructive covering of the heavily-doped silicon layer and the hydrogen injection of the heavily-doped silicon layer, the direct contact between magnetron sputtering high-energy groups and particles and the heavily-doped silicon layer is avoided, and multiple effects of high optical transmission, rapid carrier extraction, rapid carrier conduction and recombination and the like are achieved; and the passivation level of the bottom cell is improved, so that the electrical performance of the laminated solar cell is improved.

The invention provides a silicon heterojunction solar cell and a preparation method thereof. The solar cell is a silicon heterojunction solar cell based on a metal nanoparticle high work function interface. According to the method, the sizes of metal nanoparticles are regulated and controlled, and the metal nanoparticles are introduced to serve as an interface of TCO and a p-type doping layer in the back contact structure. According to the method, the metal nanoparticles with the section diameter of 8-20 nm are adopted as a TCO / p high work function interface, the work function of contact between TCO and a p-type doping layer is improved, effective extraction of holes is promoted, series resistance is reduced, and therefore the open-circuit voltage and the fill factor of the device are improved.

A method for preparing a silicon heterojunction solar cell comprises the following steps: 1) forming a plasma containing oxygen active group energy with carbon dioxide to form an oxide layer on the surface of a silicon wafer for passivating dangling bonds on the surface of the silicon wafer during PECVD chemical deposition; 2) continuing to deposit the silicon wafer with dangling bonds on the surface of the silicon wafer passivated in a gas atmosphere with a low hydrogen dilution ratio to provide abundant hydrogen for interface passivation; 3) bombarding the silicon wafer with argon plasma to break and reorganize silicon-silicon or silicon-hydrogen weak bonds in amorphous silicon, allowing free hydrogen atoms to diffuse to the interface and combine with dangling bonds on the surface of the silicon wafer, thereby reducing interface defect density and improving photosensitivity; and 4) introducing carbon dioxide as an oxygen source to continue deposition in a gas atmosphere with a high hydrogen dilution ratio to increase the bandgap width of amorphous silicon, reduce parasitic light absorption, and improve the photocurrent density of the solar cell, thereby effectively reducing the parasitic light absorption problem of intrinsic amorphous silicon and solving the problem of reduced photocurrent of heterojunction solar cells.

The application belongs to the technical field of semiconductors, and specifically provides a low-loss reversible-conductance silicon carbide field effect power transistor device; the application adopts a polysilicon / silicon carbide heterojunction, a silicon / silicon carbide heterojunction, a nickel oxide / silicon carbide heterojunction or an integrated Schottky diode structure to improve the reverse recovery characteristic of a silicon carbide MOSFET, realize self-reversible conductance, further realize lower reverse recovery loss and higher reverse recovery performance, finally reduce the reverse recovery loss and avoid using an off-chip freewheeling diode, and reduce the application cost and the volume of a system; at the same time, a high-k insulator and / or a super-junction structure, a nickel oxide / silicon carbide heterojunction super-junction structure and a nickel oxide / insulating layer / silicon carbide super-junction structure are further introduced; these new structures can effectively reduce the specific on-resistance while increasing the breakdown voltage, thereby reducing the on-loss and greatly improving the performance of the device.

The present application relates to a wide-bandgap perovskite solar cell, a perovskite / silicon heterojunction tandem solar cell, and an electrical device. The wide-bandgap perovskite solar cell includes a first electrode layer, an electron transport layer, a passivation layer, a perovskite light-absorbing layer, a hole transport layer, a buffer layer, and a second electrode layer stacked in sequence; the material of the passivation layer includes a self-assembled monolayer material and an additive, and the additive includes an organic ammonium salt containing a C6-C10 aromatic ring or a 5-10 membered heteroaromatic ring. The wide-bandgap perovskite solar cell has high cell efficiency and can reduce device hysteresis at the same time.

The invention discloses a germanium-silicon heterojunction bipolar transistor and a preparation method thereof, and relates to the technical field of semiconductors. According to the germanium-silicon heterojunction bipolar transistor and the preparation method thereof, the second opening (the emitter region opening) is aligned with the epitaxial collector region which is formed in the first opening and is used as the intrinsic collector region in the vertical direction, so that the epitaxial collector region is aligned with the epitaxial collector region in the vertical direction; according to the invention, minority carriers injected from a single crystal emitter region can pass through a germanium-silicon epitaxial inner base region to reach an epitaxial collector region to be efficiently collected so as to maintain normal and good basic device functions; the area of an epitaxial collector region surrounded by a first isolation silicon nitride layer (a base region-collector region isolation silicon nitride layer) is effectively reduced to the maximum extent to ensure related parasitic capacitance, especially the minimization of parasitic base region-collector region capacitance; therefore, the performance indexes of the germanium-silicon heterojunction bipolar transistor, such as radio frequency power gain, the highest oscillation frequency and the noise coefficient, can be optimized.

The invention discloses a preparation method of a crystalline silicon heterojunction solar cell, and relates to the technical field of photovoltaic cells. The preparation method of the crystalline silicon heterojunction solar cell comprises the following steps: providing a cut silicon wafer; performing laser pre-patterning processing on the front surface of the cut silicon wafer; performing texturing and etching treatment on the cut silicon wafer after laser pre-patterning to obtain a textured silicon wafer; sequentially depositing a functional laminated structure and a transparent conductive layer on the front surface and the back surface of the textured silicon wafer; and preparing the crystalline silicon heterojunction solar cell with the silver-coated copper buried gate electrode by using a silk-screen printing process. The line width of the grid line of the silver-coated copper buried gate electrode is smaller than or equal to 25 microns, and the height-width ratio of the silver-coated copper buried gate electrode is 0.6-1.5, so that the conductive sectional area of the grid line is effectively improved while the surface line width of the silver-coated copper buried gate electrode is not increased; the silver-coated copper buried gate electrode has low gate line resistance, small shading loss and high mechanical reliability at the same time, and the photoelectric conversion efficiency is further improved.