326 results about "Silicon heterojunction" patented technology

A prepn. method of silicon thin film heterojunction solar cell includes following steps: cleaning substrate, semiconductor cleaning technology is used to do primary cleaing to substrate surface, then do ultrasonic cleaning in deionized water several times; nitrogen blow drying; prepare nitrinsic amorphous silicon layer by heater chemical vapour phase depositing technology, tungsten filament temp. is measured by pyrometer, temp of heater and sample are determined separately by two electric thermo-couples, temp. is controlled by electric temp. controller; to react and grow thin film on substrate surface; to redeposit a transmitting layer on intrinsic amorphous silicon thin film; front and back electrodes forming, sputtering technology is used to form front and back electrodes; finally to proceed vacuum heat annealing process. The thin film produced by the invention has illumination stability, the photoconduction gain can reach to 10 to the power 6 on Am1.5 100mW/cm2 standard illumination.

A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.

Methods are described for fabricating HIT solar cells, including double heterojunction and hybrid heterojunction-homojunction solar cells, with very thin single crystal silicon wafers, where the silicon wafer may be less than 80 microns thick, and even less than 50 microns thick. The methods overcome potential issues with handling these very thin wafers by using a process including epitaxial silicon deposition on a growth substrate, partial cell fabrication, attachment to a support substrate and then separation from the growth substrate. Some embodiments of the present invention may include a solar cell device architecture comprising the combination of a heterostructure on the front side of the device with a homojunction at the rear of the device. Furthermore, device performance may be enhanced by including a dielectric stack on the backside of the device for reflecting long wavelength infrared radiation.

The present invention provides a germanium-silicon heterojunction transistor single event effect test method based on heavy ion microbeam irradiation. The problems are mainly solved that a damaging mechanism cannot be directly represented and a sensitive region cannot be accurately located in the prior art. The implementation scheme of the method comprises the steps of: selecting a germanium-silicon heterojunction transistor sample to test electrical properties of the germanium-silicon heterojunction transistor sample; making and testing a PCB test board for irradiation, and performing de-encapsulation processing of a germanium-silicon heterojunction transistor device prior to test; assembling an irradiation platform; setting a test condition of a heavy ion microbeam irradiation test; performing beam ejecting position location of a heavy ion microbeam irradiation device; setting the type and the weight of incident heavy ions; developing the heavy ion microbeam irradiation test; and recoding and processing all the test data, and obtaining a single event effect sensitive region. The method provided by the invention can accurately locate the germanium-silicon heterojunction transistorsingle event effect sensitive region, can improve the experiment precision, can reduce the test cost and can be used for assessment of the astronavigation anti-radiation capacity for microelectronicdevices.

The invention relates to a preparation method for a silicon heterojunction/perovskite based double-electrode laminated solar cell. Compared with a unijunction solar cell, the laminated solar cell canutilize medium-short wave photons in the sun spectrum more effectively to achieve a higher efficiency. The laminated solar cell based on silicon heterojunction/perovskite electrodes comprises a top wide-band-gap perovskite solar cell and a narrow-band-gap silicon cell, and also comprises an anti-reflecting layer, a transparent top electrode, a protective layer, a perovskite absorbing layer, an electron transmission layer, an intermediate layer, a Si heterojunction battery and a metal electrode successively from top to bottom. The tunnel junction and perovskite absorbing layer are prepared at low temperature. The silicon heterojunction/perovskite double-electrode laminated solar cell prepared by a simple low-cost solution method can reach the efficiency of 22.22% which is in a leading position domestically.

The invention relates to the field of a solar cell, and provides a perovskite/silicon heterojunction two-end laminated solar cell. In the laminated solar cell, the cell with high open voltage and high efficiency is obtained by employing a heterojunction solar cell as a bottom cell, a perovskite solar cell as a top cell and ITO as a tunneling junction and by the matched energy level of a silicon cell and perovskite. By fabricating an intermediate protection layer on a hole transmission layer of the top cell, the laminated solar cell is prevented from being damaged by a subsequent transparent electrode, the structure is prevented from being damaged, the filling factor of the laminated solar cell is improved, and the efficiency is further improved. The preparation method for the material employed by the structure is simple and is easy to implement, and relatively good conversion efficiency can be obtained.

The present invention discloses a method for fabricating a silicon heterojunction solar cell. The silicon heterojunction solar cell according to the present invention comprises a first conductive silicon substrate; a first intrinsic silicon layer and a second intrinsic silicon layer respectively formed on two sides of the first conductive silicon substrate and jointed with the first conductive silicon substrate to form silicon heterojunctions; a second conductive silicon layer and a first conductive heavily-doped silicon layer respectively formed on the first intrinsic silicon layer and the second intrinsic silicon layer, wherein the second conductive silicon layer and the first conductive heavily-doped silicon layer are formed via an ion implantation method, whereby is optimized the thickness and doped quality of the second conductive silicon layer and the first conductive heavily-doped silicon layer.

The invention in particular provides a high performance ultraviolet light detector made from an n-n homotype heterojunction material and formed by a titanium dioxide nanorod array and an n-type silicon substrate. A preparation method of the ultraviolet light detector comprises the following steps: growing a titanium dioxide nano dot film on the n-type silicon substrate by using a sputtering method; then inducing a seed layer to generate the titanium dioxide nanorod array by a water heating method; finally preparing a light transmitting metal layer electrode film by a magnetron sputtering method. The titanium dioxide nanorod array/silicon heterojunction ultraviolet light detector prepared by using the amplification effect of the titanium dioxide nanorod array/silicon heterojunction has the characteristics of being simple in process, low in cost, heater-free, capable of working under room temperature, low in energy consumption, high in sensitivity and short in response and restoration time, has good detection performance to ultraviolet light, and has important application prospect.

The embodiment of the invention discloses a silicon heterojunction solar cell with an electroplating electrode and a manufacturing method thereof. The method comprises the steps that a metal seed layer is formed on the surface, where a grid needs to be manufactured, of a cell substrate; a silk-screen printing ink process is used for forming an ink grid line groove pattern on the surface of the metal seed layer; after a preset time interval, the ink grid line groove pattern is cured; the ink grid line groove pattern is used as a mask film, an electroplating process is used for depositing a composite metal layer; the ink grid line groove pattern and the part, which is not in contact with the composite metal layer, of the metal seed layer is removed. The implementation mode for forming the ink grid line groove pattern by the silk-screen printing ink process is simple and controllable, moreover, ink can be removed easily, and the manufacturing technology is simple. In the curing process, the ink can be evenly expanded and deformed, the width of an opening of the obtained ink grid line groove pattern is small, the depth-width ratio of a formed metal grid line is large, the light shading area is small, and the efficiency of the silicon heterojunction solar cell with the electroplating electrode is improved.

The invention discloses a CNT (carbon nano tube)-silicon heterojunction solar cell and a manufacturing method thereof. The solar cell comprises a lower electrode, a silicon wafer arranged on the lower electrode, an annular insulating layer deposited on the silicon wafer, cuprous iodide particles deposited on the silicon wafer and arranged in an annular cavity of the annular insulating layer, a CNT film paved on the insulating layer, the silicon wafer and the cuprous iodide particles, and an annular upper electrode on the CNT. The manufacturing method of the solar cell comprises the following steps of: placing a silicon wafer of which the upper and lower surfaces are provided with the lower electrode and the annular insulating layer in a mixed water solution of Cu (NO3)2 and HF (hydrogen fluoride) to carry out etching so as to obtain a silicon wafer of which the surface is provided with copper particles; placing the silicon wafer with the copper particles in an iodic ethanol solution to carry out halogenation so as to obtain a silicon wafer of which the surface is provided with the cuprous iodide particles; paving the CNT film on the silicon wafer with the cuprous iodide particles; and depositing the upper electrode on the CNT film to obtain the solar cell.

The invention discloses a silicon heterojunction solar cell and a manufacturing method of the silicon heterojunction solar cell to improve the passivation effect of the side face of the silicon heterojunction solar cell and improve the performance of the silicon heterojunction solar cell. The silicon heterojunction solar cell comprises a crystal silicon substrate, a first amorphous silicon passivation layer, a first transparent electrode, a first grid line electrode, a second amorphous silicon passivation layer, a second transparent electrode and a second metal electrode, and further comprises an edge passivation layer, wherein the first amorphous silicon passivation layer, the first transparent electrode and the first grid line electrode are sequentially arranged on the upper surface of the crystal silicon substrate, the second amorphous silicon passivation layer, the second transparent electrode and the second metal electrode are sequentially arranged on the lower surface of the crystal silicon substrate, and the edge passivation layer at least covers the same side faces of the crystal silicon substrate, the first amorphous silicon passivation layer and the second amorphous silicon passivation layer.

The invention discloses a self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor which is designed for solving the defects that the existing product base resistance RB is large and the like. The self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor mainly comprises a Si collector region, a local medium region, a base region, a base region low-resistance metal silicide layer, a heavy doping polycrystalline silicon lifting outer base region, an outer base region low-resistance metal silicide layer, a heavy doping polycrystalline silicon emission region, an emission region low-resistance metal silicide layer, an emission region-base region isolation medium region and a heavy doping single-crystal emission region. The base region low-resistance metal silicide layer extends at the outer side of the emission region-base region isolation medium region. The invention discloses a preparation method for the self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor and used for preparing the bipolar transistor. The self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor and the preparation method of the self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor can effectively reduce the base resistance RB, and are simple in process steps and low in cost.

The invention discloses a molybdenum disulfide / silicon heterojunction solar energy cell and a preparation method thereof. The chemical vapor deposition method can be used in preparing uniform molybdenum disulfide film with large-area and high crystallinity degree. The molybdenum disulfide film has a relatively high carrier mobility and an adjustable band gap. The prepared molybdenum disulfide / silicon heterojunction solar energy cell has characteristics of normal temperature preparation, simple process, low cost and high photoelectric conversion efficiency, and can perform effective conversion of solar energy even when the cell cost is reduced.

The invention discloses a graphene/palladium diselenide/silicon heterojunction self-driven photoelectric detector, which is applied to the technical field of photoelectric detection. In view of the problem that the existing photoelectric detector is limited by weak light absorption performance of graphene and low in responsivity, a technical scheme as follows is adopted: firstly, an n-type siliconwindow is exposed on an n-type silicon dioxide/silicon substrate through dry etching; a gold/indium electrode is plated near the silicon window, a palladium diselenide microchip is prepared by adopting mechanical stripping, and palladium diselenide is transferred to the silicon window by utilizing a positioning dry method; and finally, graphene is transferred in a wet transfer mode and covers thesurfaces of palladium diselenide and the electrode, palladium diselenide serves as an interface modification layer between graphene and silicon, and a graphene/palladium diselenide/silicon heterojunction is formed by the graphene layer, the palladium diselenide layer and the n-type silicon substrate corresponding to the single silicon window. The device provided by the invention is simple in preparation process, has self-driving performance, and has excellent performances such as relatively high responsivity in a visible-near-infrared light band.

The invention discloses a silicon heterojunction solar cell and a preparation method thereof. Wherein the solar cell comprises an n-type crystalline silicon substrate layer; a lightly doped an n-typehydrogenated amorphous silicon buffer layer formed on the upper and lower side surfaces of the substrate layer; a heavily doped p-type hydrogenated amorphous silicon emitter layer formed on the surface of one side of lightly doped n-type hydrogenated amorphous silicon buffer layer; a heavily doped n-type hydrogenated amorphous silicon back field layer formed on the surface of the other side of thehydrogenated amorphous silicon buffer layer; transparent conductive oxide layers formed on the surfaces of the hydrogenated amorphous silicon emitter layer and the hydrogenated amorphous silicon backfield layer, respectively; an alloy gate line electrode layer formed on a surface of at least one of the transparent conductive oxide layer, hydrogenated amorphous silicon back field layer, and hydrogenated amorphous silicon emitter layer; and an electrode protection layer formed on the surface of the alloy gate line electrode layer.

The invention relates to an all-inorganic perovskite layer, and the all-inorganic perovskite layer is doped with an ammonium salt stabilizer, so that the migration of ions in a perovskite material iseffectively inhibited, and the stability of a perovskite phase is maintained. The invention further discloses a preparation method and application of the perovskite layer doped with the stabilizer. Through the doping of the stabilizer, the stability of a perovskite single-junction solar cell and the stability of a perovskite/silicon heterojunction laminated solar cell are improved, the photoelectric conversion efficiency is further improved, and the highest photoelectric conversion efficiency can reach 25.04%.

The invention specifically provides a high-performance hydrogen detector, which takes a silicon dioxide-covered silicon wafer as a substrate, takes a titanium dioxide semiconductor as a base material, and takes palladium as a catalytic layer. First, a titanium dioxide film is grown on the silicon dioxide-covered silicon substrate by utilizing a radio frequency magnetron sputtering method; and then, a palladium catalytic layer of which the area is smaller than that of the titanium dioxide film is prepared on the film surface by a mask and a direct-current magnetron sputtering method. A palladium/titanium dioxide/silicon dioxide/silicon heterojunction-based hydrogen detector which is disclosed by the invention and utilizes the catalytic effect of the palladium film and the amplification effect of a titanium dioxide/silicon dioxide/silicon heterojunction is simple in process and low in cost, does not need a heater, can work at room temperature, has the characteristics of high sensitivity and short response and recover time, has good detection performance on hydrogen and has an important application prospect.

The invention discloses a manufacturing method of a SiGe heterojunction bipolar transistor. The method comprises the following steps of: forming high P-type doped polycrystalline silicon which raises an outer base region in combination with materials and a process used in a shallow slot isolation process module; forming an inner base region of a germanium-silicon heterojunction bipolar transistor region by using a selective epitaxial process; and depositing an emitter by taking a medium film as an isolation layer between the emitter and the outer base region so as to form a raised outer base region, wherein a self-aligned germanium-silicon heterojunction bipolar transistor is arranged between the outer base region and the emitter. Process steps are reduced, manufacturing time is shortened and manufacturing cost is lowered.

The invention belongs to the technical field of solar cells, and particularly relates to a crystalline silicon substrate perovskite laminated heterojunction cell structure and a preparation method. The laminated heterojunction cell sequentially comprises a transparent conductive film (TCO), an electron transport layer, a perovskite layer, a hole transport layer, an interface layer, an electron transport layer, a passivation layer, N-type monocrystalline silicon, a passivation layer, a hole transport layer, a transparent conductive film and a back electrode from the front surface to the back surface. The cell prepared by the invention combines the advantages of a non-doped crystalline silicon heterojunction cell and a perovskite solar cell technology, the generated synergistic effect is fargreater than that of a single technology, and a plurality of problems, such as low crystalline silicon efficiency and poor perovskite stability, generated when the two technologies in the backgroundtechnology are independently adopted are well solved.