44results about How to "Raise the level of doping" patented technology

Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm³ per minute and/or wherein the process gases are injected into the plasma chamber through the or each gas inlet nozzle with a Reynolds number a Reynolds number in a range 1 to 100.

A CMOS-implementable TOF detector promptly collects charge whose creation time can be precisely known, while rejecting collection of potentially late arriving charge whose creation time may not be precisely known. Charges created in upper regions of the detector structure are ensured to be rapidly collected, while charges created in the lower regions of the detector structure, potentially late arriving charges, are inhibiting from being collected.

A self-aligned dielectric spacer is etched by providing capped gate structure along a second layer of dielectric material located above the gate cap material. Dopant material at an increased doping level is provided in the second layer of dielectric material where the self-aligned spacer is to be located. The second layer of dielectric material is then etched selective to the dopant to define the self-aligned dielectric spacer.

A particulate precursor compound for manufacturing an aluminum doped lithium transition metal (M)-oxide powder usable as an active positive electrode material in lithium-ion batteries includes a transition metal (M)-hydroxide or (M)-oxy-hydroxide core and a non-amorphous aluminum oxide coating layer covering the core. By providing an aluminum thy-coating process where the particulate precursor core compound is mixed with alumina powder in one or more procedures, higher doping levels of aluminum compared to the known prior art may be achieved. The crystal structure of the alumina is maintained during the coating procedures and the core of each mixed transition metal precursor particle is surrounded by a coating layer containing crystalline alumina nano particles. The aluminum concentration in the particulate precursor decreases as the size of the core increases.

Disclosed is a polybenzimidazole based polymer, which can be used at high temperature under no-humidification conditions for preparing a fuel cell, in particular, a fuel cell membrane instead of the existing Nafion type perfluorosulfonated polymers, with which it is easy to increase a doping level, and also, which exhibits an excellent mechanical strength, further, which is inexpensive. Further, disclosed is a method for preparing the polybenzimidazole based polymer.

The invention discloses an application of a polybenzimidazole polymer containing a side group in a proton exchange membrane, belonging to the technical field of proton exchange membranes for high-temperature fuel cells. The polybenzimidazole polymer containing the side group is characterized in that the side group is introduced on a PBI molecular chain, and preferably, the polymer is polybenzimidazole containing meta-benzyl or polybenzimidazole containing a benzene side group. A preparation method of the proton exchange membrane comprises the following steps: dissolving the polybenzimidazole polymer containing the side group into DMSO, baking on a glass plate to form a thin film, and then soaking into phosphoric acid for 3-108 hours to prepare a proton exchange membrane of phosphoric acid doped polybenzimidazole containing the side group. The proton exchange membrane of phosphoric acid doped polybenzimidazole containing the side group disclosed by the invention has higher phosphoric acid doping level and conduction rate on the basis of keeping relatively good mechanical performance and chemical stability.

A polymer electrolyte comprising at least one aromatic polyether copolymer with main chain pyridine groups and side chain carboxylic acid or carboxylic ester or toluene or methoxy phenyl or hydroxyl phenyl or propenyl or styrene groups and/or pyridine groups, which have the ability to be covalently cross-linked.

A micromechanical device having a main plane of extension includes a sensor wafer, an evaluation wafer, and an intermediate wafer situated between the sensor wafer and the evaluation wafer, the evaluation wafer having at least one application-specific integrated circuit. The sensor wafer and/or the intermediate wafer includes a first sensor element and a second sensor element spatially separated from the first sensor element, the first and second sensor elements being respectively located in a first cavity and a second cavity each formed by the intermediate wafer and the sensor wafer, a first gas pressure in the first cavity differing from a second gas pressure in the second cavity, and the intermediate wafer having an opening at a point in a direction perpendicular to the main plane of extension.

The invention discloses an epitaxial growth method with a p-layer special doped structure. According to the method, when a p-type layer of an LED (Light Emitting Diode) is grown, double-element doping of a GaN/AlGaN superlattice structure is adopted, that is, a small amount of silane is doped when doping magnesium. The silane is doped as a donor, however, due to the small amount of the doped silane, the lattice imperfection caused by the doped magnesium can be remarkably improved, a self-compensation effect is reduced, the crystal quality is improved, non-composite imperfection centers are reduced, a small number of scattering centers are caused, the carrier mobility and the ionization efficiency of an accepter are improved, and in addition, as the growing temperature of AlGaN is high, such doping is beneficial for improving the doping concentration of magnesium, the doping effect of the p-layer is improved, and the overall lighting efficiency of the LED is greatly improved. Due to improvement of the crystal quality and the improvement of barrier layer conductivity, the current expansion capability is improved, and the reliability of the LED device is also improved.

The invention provides a method of manufacturing a semiconductor device comprising a non-selectively grown SiGe(C) heterojunction bipolar transistor, the method comprising the steps of: forming an insulating layer (12, 40) on a substrate and forming an insulating layer (12, 40) on the insulating A layered structure comprising a conductive layer (14,42) is provided on the layer (12,40), a transistor area window (12,44) is corroded by the conductive layer (14,42), and a transistor area window (22,44) Depositing a SiGe base layer (24, 46) on the inner walls, and forming an insulator (32, 52) on the upper surface to fill the transistor area window, wherein, before the filling step, the nitride layer (30, 50) is formed as The inner layer of the transistor area window (22, 44).

Novel structures and compositions for multilayer light-emitting electrochemical cell devices are described, particularly those that are adapted to work with stable and printable electrode metals, that optimize recombination efficiency, lifetime and turn-on kinetics. In particular, embodiments of the present invention provide improved performance and extended lifetime for doped electronic devices, where ionic doping levels, ionic support materials content, and electronic transport content are advantageously structured within the device. The doping profile of mobile or semi-mobile ionic dopants is intentionally made to be non-uniform to enhance doping in the interface regions of a device where the active layer interfaces with the electrode.

The present disclosure relates to a polymer electrolyte membrane containing polybenzimidazole for a fuel cell and to a method for manufacturing the same. In the polymer electrolyte membrane containing polybenzimidazole for a fuel cell according to the present disclosure, carbon black or a metal-grafted porous filler based on carbon black or carbon black and silica is efficiently dispersed in polybenzimidazole, and physically and chemically bound with polybenzimidazole, and thus the polymer electrolyte membrane has excellent mechanical and thermal properties, can improve impregnating efficiency of phosphoric acid to exhibit high proton conductivity, and can reduce deterioration in ion conductivity of the electrolyte membrane due to the leakage of phosphoric acid.

An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of the first conductivity type disposed over the top region has a doping concentration higher than that of the floating body region of the first conductivity type. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.