Epitaxial growth method with p-layer special doped structure

An epitaxial growth, special technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of difficult to generate high carrier concentration, growth conditions, reduce material quality and other problems, to reduce the self-compensation effect , Improve crystal quality, improve the effect of doping effect
CN103854976AInactive Publication Date: 2014-06-11西安利科光电科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
西安利科光电科技有限公司
Publication Date
2014-06-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses an epitaxial growth method with a p-layer special doped structure. According to the method, when a p-type layer of an LED (Light Emitting Diode) is grown, double-element doping of a GaN / AlGaN superlattice structure is adopted, that is, a small amount of silane is doped when doping magnesium. The silane is doped as a donor, however, due to the small amount of the doped silane, the lattice imperfection caused by the doped magnesium can be remarkably improved, a self-compensation effect is reduced, the crystal quality is improved, non-composite imperfection centers are reduced, a small number of scattering centers are caused, the carrier mobility and the ionization efficiency of an accepter are improved, and in addition, as the growing temperature of AlGaN is high, such doping is beneficial for improving the doping concentration of magnesium, the doping effect of the p-layer is improved, and the overall lighting efficiency of the LED is greatly improved. Due to improvement of the crystal quality and the improvement of barrier layer conductivity, the current expansion capability is improved, and the reliability of the LED device is also improved.
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Description

technical field

[0001] The invention belongs to the technical field of photoelectric device material preparation and structure design, and in particular relates to an LED epitaxial doping growth method and an epitaxial sheet structure thereof. Background technique

[0002] Group III nitride semiconductor materials are playing an increasingly widespread role due to their excellent characteristics. They have the characteristics of large band gap, high electron drift saturation velocity, small dielectric constant, and good thermal conductivity. They are very suitable for making radiation-resistant materials. , high-frequency, high-power and high-density integrated electronic devices; using its unique band gap, it can also produce blue, green and ultraviolet light-emitting devices and photodetection devices. After nearly ten years of development, GaN-based blue LEDs have been successfully commercialized and widely used in the fields of landscape lights, backlights, and lighting....

Claims

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