54 results about "Trimethylindium" patented technology

A white light-emitting diode prepared by metal-organic chemical vapor deposition (MOCVD), which can cover indium nitride (InN) quantum dots (QD) and Indium-rich indium gallium nitride (InGaN) quantum dots produce broadband emission covering the entire visible spectral region by introducing trimethylindium (TMIn) as nuclei for growing QDs within the QW, The release of at least one of triethylindium (TEIn) and ethyldimethylindium (EDMIn) is achieved. Therefore, the diode can emit white light in the range of 400nm to 750nm by adjusting the In release parameters.

The method for growing indium gallium arsenide phosphorus multiple quantum wells in selected regions by mixing organic gallium sources in the present invention is to use triethylgallium and trimethylindium to grow confinement layers and barriers when selectively growing indium gallium arsenide phosphorus multiple quantum wells, and three Methylgallium and trimethylindium growth wells; the quantum well material grown by this method has a large strain in the selective growth region, while in the non-selective growth region, the well region has a small strain; the barrier and the confinement layer are in The strain change of the two growth regions is very small, which makes the quantum well with the selective growth region have high luminous efficiency, and ensures the realization of high-performance electroabsorption modulation DFB laser.

The invention relates to a preparation method of high-purity trimethyl indium, belonging to the technical field of preparing group III metallic compounds in the periodic table of elements. The preparation method disclosed by the invention comprises the following steps: (1) taking diethyl ether as a solvent to prepare a trimethyl indium crude product; (2) carrying out purification to the trimethyl indium crude product obtained in step (1), wherein the purification method comprises the step of adopting a first chromatographic column to carry out purification to the trimethyl indium crude product; and the stationary phase adopted by the first chromatographic column is grafted silica, and the grafted silica is silica of which the surface is grafted with tri-n-octylamine. The preparation method disclosed by the invention adopts the two steps of synthesis and separation and obtains the trimethyl indium of which the purity can reach 6N; above all, the purity method adopted is combined with the solid-liquid separation means, a certain coordination agent is loaded on the silica, not only is the operation simple, but also the purification effect is improved further.

The invention provides a method for growing a high-quality indium nitride single crystal epitaxial film, which is to introduce small amount of halide while growing indium nitride, and comprises the following steps: selecting a substrate; placing the substrate in a metal-organic chemical vapor deposition system, raising the temperature, and introducing ammonia gas for pretreatment; and reducing temperature to a growth temperature, and simultaneously introducing trimethylindium (TMI), the ammonia gas (NH3) and the small amount of the halide to grow the high-quality indium nitride single crystalepitaxial film. The method can improve the crystallization quality of InN and the surface smoothness.

The invention discloses a method for preparing a high-performance InGaN / AlGaN MQW ultraviolet LED. Blue ammonia, high-purity trimethylindium and high-purity trimethyl gallium serve as an N source, an In source and a Ga source respectively, and SiH4 and Cp2Mg serve as an n type doping agent and a p type doping agent respectively. The method comprises the following steps that firstly, a sapphire substrate or a SiC substrate or a Si substrate is nitrided; secondly, a buffering layer is grown and crystallized, and then a uGaN nucleating layer is grown; thirdly, a low Si-doped n-GaN layer is grown first, and then a high Si-doped n+GaN layer is grown; fourthly, an n-AlGaN layer is grown; fifthly, a Si-doped n+GaN layer is grown, and then an nGaN layer without Si is grown; sixthly, three cycles of InGaN / GaN superlattices without Al are grown, and then eight cycles of Al-doped InGaN / GaN is grown; seventhly, a PAlGaN layer is grown; eighthly, a Mg-doped P+GaN layer is grown; ninthly, a high Mg-doped P++GaN layer is grown. According to the method, InGaN / AlGaN MQW ultraviolet LED epitaxy pieces of the specific structure are grown with an LP MOCVD system, the preparing cost is low, time is saved, the prepared ultraviolet LED is good in performance, and the ultraviolet LED epitaxy industrialization is promoted.

The invention discloses a method for growing GaN nanowires. The steps of the method include: pre-introducing trimethyl indium on a quartz substrate or a substrate coated with a layer of silicon dioxide film on the surface, so that a liquid is formed on the surface of the substrate. Phase indium drop, and then feed trimethylgallium and ammonia gas at the same time to form alloy droplets; finally feed trimethylgallium, ammonia gas and silane at the same time to grow GaN nanowires on the alloy droplets. The method of the present invention uses trimethyl indium as the source of indium catalyst, and realizes the controllable growth of high-quality GaN nanowires on cheap and easy-to-obtain quartz or a substrate coated with a silicon dioxide film on the surface; and belongs to in-situ introduction , without the cumbersome process of transferring and cleaning between different devices, effectively avoiding the contamination of samples during the transfer process; and without the need for complicated buffer layer design, the operation is simple and easy, which is conducive to industrial production.