54 results about "Trimethylindium" patented technology

The invention relates to a method to generate nitride epitaxial layer and nitride light emitting diode structure epitaxial wafer through MOVCD. The MOVCD technology is adopted, high purity NH3 is utilized as N source, high purity H2 or N2 is utilized as the carrier gas, and trimethyl gallium (TMGa) or triethyl gallium (TEGa), trimethyl indium (TMIn) and trimethyl aluminium (TMAl) are respectively utilized as Ga source, In source and Al source; the substrate adopts sapphire (Al2O3); the sapphire substrate is heated to 500 DEG C in the MOCVD reaction chamber, in the atmosphere of H2, trimethyl gallium (TMGa) is filled to generate a GaN layer, in the high temperature (1200 DEG C) H2 atmosphere, reaction is generated between GaN and the sapphire(Al2O3) on the substrate surface, the surface damage and the surface pollution of the sapphire can be better removed, micro pits of the nanometer grade can be corroded on the sapphire surface, the micro pits is favorable to the improvement of the epitaxial layer, and to the most important, the LED emitting efficiency is enhanced.

The invention relates to a method for industrially preparing trimethyl indium, The method is characterized by comprising the following steps: putting indium-magnesium alloy materials into a reaction kettle filled with inert gases; adding alkyl halide step by step while stirring in the presence of ether solvents; controlling the return velocity of the solvents by controlling the dropwise adding velocity of alkyl halide; vaporizing the solvents after the reaction is finished; obtaining the compound of trimethyl indium and ethers under the condition of reduced pressure; and finally decompoundingthe compound to obtain the trimethyl indium. The process is simple and steady in reaction, easy to control, high in reaction yield and very safe in reaction process as the raw materials adopted in the reaction process do not contain the materials liable to spontaneous combustion, thus being especially suitable for large-scale industrial production.

The epitaxial structure comprises following parts: a substrate; a first buffer layer of gallium nitride formed on the substrate; a second buffer layer of gallium indium nitride formed on the first buffer layer; and a epitaxial layer of gallium nitride formed on the second buffer layer. Steps for preparing the structure are as following: forming the first buffer layer of gallium nitride on the substrate at first temperature through epitaxy; forming second buffer layer of gallium indium nitride on the first buffer layer at second temperature; in procedure of raising temperature to third temperature, carrying out surface treatment by maintaining predecessor of trimethyl aluminum and ammonia on second buffer layer; finally, epitaxial layer of gallium nitride is developed at third high temperature. Advantages are: perfective crystal structure and lower density of defects increase efficiency and lifetime of subassembly.

The invention provides a method for preparing a novel GaN-based laser and a GaN-based laser. According to the method of the invention, a series of critical technologies and scientific problems in the preparation of a GaN-based laser can be solved through adopting a metal organic chemical compound vapor phase epitaxy technique. According to the technical scheme of the invention, the method for preparing the novel GaN-based laser includes the step that with trimethylgallium, trimethylindium and trimethylaluminum adopted as a III-family source, ammonia adopted as a V-family source, and silane adopted as an n type doping source, and magnesocene adopted as a P type doping source, the metal organic chemical compound vapor phase epitaxy technique is utilized to prepare the novel GaN-based laser. According to the method for preparing the novel GaN-based laser of the invention, a multi-cycle In component linear graded InxGa1-xN/GaN superlattice structure, replacing a traditional single GaN layer, is adopted as the waveguide layer of the GaN-based blue laser, and therefore, limiting factors of a light field in a laser emission region can be effectively improved, and the gain of the active regions of quantum wells can be improved.

The invention discloses a growth method of p-type AlGaN semiconductor material, the semiconductor material is grown by a technical method of adding a gallium source through step into a surfactant-assisted magnesium delta doping, Ammonia gas or dimethylhydrazine nitrogen is used as group V nitrogen source in the growth of p-type AlGaN semiconductor material, Trimethylgallium or triethylgallium is used as a Group III gallium source, trimethylaluminum or triethylaluminum is used as a Group III aluminum source, trimethylindium or triethylindium is used as a Group III indium source, collectively referred to as a Group III metal source, and trimethylindium or triethylindium is also used as a surfactant in the acceptor doping layer. The method of the invention can improve crystal quality, increase doping concentration of acceptor doped magnesium atoms, reduce acceptor ionization energy by enhancing valence band modulation, and further suppress self-compensation effect, thereby obtaining p-type AlGaN semiconductor material with high crystal quality and high hole concentration.

To provide a method for manufacturing InGaN which causes less segregation of In and achieves high crystallinity of an InGaN layer with the proportion of In increased.

The method for manufacturing an InGaN layer including growing an InGaN layer under conditions of a growth temperature of 700 to 790° C., a growth rate of 30 to 93 Å/min, and a flow rate of trimethylindium of 0.882×10⁻⁵ to 3.53×10⁻⁵ mol/min.

The invention discloses a growth method of a GaN nanowire. The method comprises the following steps: leading trimethylindium to a quartz substrate or a substrate coated with a layer of silica film on the surface in advance, forming a liquid-phase indium drop on the bottom surface of the substrate, and then leading trimethyl gallium and an ammonia gas simultaneously, so as to form an alloy liquid drop; finally, simultaneously leading the trimethyl gallium, the ammonia gas and silicane; growing the GaN nanowire on the alloy liquid drop. By adopting the method, the trimethylindium is adopted as a tin catalyst source, a high-quality GaN nanowire grows on the cheap and available quartz or the substrate coated with the silica film on the surface, the method belongs to in-situ introduction, and is free of fussy processes of transferring and cleaning between different equipments, staining of a product in the transferring process is effectively avoided, a complicated buffer layer design is not needed, and the growth method is simple and convenient, and feasible to operate, and beneficial to industrial production.

The invention belongs to the technical field of novel photoelectric material deposition and preparation, and provides a method for the low-temperature deposition of an InN film on a glass substrate, from which the InN photoelectric film with favorable electrical properties can be prepared. The method comprises the following steps: 1), allowing the glass substrate to be subjected to acetone, ethanol, deionized water and ultrasonic cleaning, and then feeding to a reaction chamber after being dried by the nitrogen gas; 2), vacuumizing the reaction chamber by an ECR-PEMOCVD system, heating the glass substrate to 20-400 DEG C, pumping trimethylindium carried by hydrogen, and nitrogen gas into the reaction chamber at the flow ratio of (2-4):(100-200), wherein the overall gas pressure is controlled at 0.8-2.0 Pa, and the electronic convolution resonance vibration reaction is carried out for 30 min-3 h. Due to the adoption of the method, the InN photoelectric film on the glass substrate is prepared.

The invention provides a composite-DBR-structure-based AlGaInP light-emitting diode. The preparation method comprises: a metal organic chemical vapor deposition system uses high-purity hydrogen as carrier gas, trimethyl gallium, trimethylaluminum, trimethylindium, arsine and phosphorane as Ga, Al, In, As, and P sources, and disilane and magnesocene as N and P type dopants. According to the invention, with the three-reflected central wavelength composite DBR, the reflection efficiency is high and the luminous efficiency of the AlGaInP LED is improved substantially. The influences on the luminous efficiency of the LED by the composite DBR with many reflected central wavebands is studied.

The invention provides a method for growing a high-quality indium nitride single crystal epitaxial film, which is to introduce small amount of halide while growing indium nitride, and comprises the following steps: selecting a substrate; placing the substrate in a metal-organic chemical vapor deposition system, raising the temperature, and introducing ammonia gas for pretreatment; and reducing temperature to a growth temperature, and simultaneously introducing trimethylindium (TMI), the ammonia gas (NH3) and the small amount of the halide to grow the high-quality indium nitride single crystal epitaxial film. The method can improve the crystallization quality of InN and the surface smoothness.

The invention discloses a trimethylindium low-temperature purifying device, which comprises a purifying raw material kettle, a receiving tank, a vacuum protection device and a vacuum pump, wherein a solid trimethylindium material is arranged in a purifying raw material kettle; a high-purity gas carrier pipe is connected to the purifying raw material kettle; the purifying raw material kettle is connected with a receiving tank through a heat- tracing pipe; the receiving tank is connected with the vacuum protection device; the vacuum protection device is connected with a vacuum pump; and a condensing device is arranged in the receiving tank. The invention also discloses a trimethylindium low-temperature purification method. In the method, the pressure in the purifying raw material kettle is less than 50 Torr, the temperature in the purifying raw material kettle is controlled to be 30-80 DEG C, the temperature in the receiving tank is controlled to be -30 to 30 DEG C, and a high-purity carrier gas drives the trimethylindium material to enter the receiving tank, and after cooling, purified trimethylindium is obtained. The purifying method has low requirements on equipment, low equipmentcost investment and simple operation, improves the purity of the trimethylindium, and greatly improves the safety and stability of the purification process.

The invention provides a growth method of a light emitting diode and the light emitting diode. The growth method comprises the following steps: 1) nitrogen, ammonia, trimethylaluminum, trimethylgallium and trimethylindium are introduced into reaction equipment at 800-930 DEG C and 200Torr to grow a first AlxInyGa1-x-yN layer on a quantum well luminescent layer and then the introduction of nitrogen, ammonia, trimethylaluminum, trimethylgallium and trimethylindium is stopped; 2) hydrogen is introduced into the reaction equipment to enable the first AlxInyGa1-x-yN layer to be converted into a first AlxGa1-xN layer; and 3) the step 1) to the step 2) are cyclically performed for T times so as to obtain an electron barrier layer AlxGa1-xN, wherein 0 <x<1, 0<y<1 and x>y. The method is helpful togrow the high-quality electron barrier layer on the basis of no negative influence on the quantum well structure.

The invention discloses an industrial purification method of trimethylindium. The industrial purification method comprises the following steps: adding a trimethylindium.ether complex in a reactor protected by an inert atmosphere, and then adding cycloalkane CnH2n (n is equal to or greater than 6) and reacting, wherein the temperature of the reaction system is always kept at 30-100 DEG C, and during the dropwise adding process, the dissociated ether is cooled by virtue of a condenser and is directly received in a receiving tank to achieve the complete dissociation of ether from trimethylindium. The reagents adopted by the method disclosed by the invention are conventional reagents and are inexpensive and easily available, the reaction process is mild and has no security risk; and as ether is continuously separated from the reaction system, the dissociation efficiency of ether is improved. No waste is generated in the reaction, the cost is reduced and no environment pollution is caused.

The invention relates to an efficient purifying method of trimethylindium, belonging to the technical field of compound purification. The purifying method comprises the following steps of (1) pouring a crude product of trimethylindium into a first chromatographic column with a stationary phase as filler, naturally and downwards flowing the crude product of trimethylindium by virtue of gravity, and collecting a solution when all the liquid flows up; (2) pouring the collected solution into a second chromatographic column with a stationary phase as surface grafted filler, naturally and downwards flowing the solution by virtue of gravity, and collecting the solution when all the liquid flows up; then, pouring the collected solution into the second chromatographic column, and repeating the operation 2-5 times, wherein the surface grafted filler is filler of which the surface is grafted with tri-n-octylamine; and (3) heating and disassembling the second chromatographic column treated in the step (2), and collecting by vacuumizing at the bottom of the chromatographic column to obtain purified trimethylindium. The purifying method disclosed by the invention is combined with a solid-liquid separation means, and a specific coordination agent is loaded on the filler, so that not only is the method simple, but also the purifying effect is further improved.