Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

7 results about "Trimethylindium" patented technology

Trimethylindium (abbr: TMI or TMIn), In(CH₃)₃, (CAS #: 3385-78-2) is the preferred organometallic source of indium for metalorganic vapour phase epitaxy (MOVPE) of indium-containing compound semiconductors, such as InP, InAs, InN, InSb, GaInAs, InGaN, AlGaInP, AlInP, AlInGaNP, etc. TMI is a white, crystalline and sublimable solid, with melting point 88 °C. TMI is pyrophoric (ignites spontaneously upon contact with air), and its decomposition is often found to be uncontrollable as the temperature of its surrounding exceeds its melting point (i.e. > 88 °C) and reaches 101 °C and above. TMI is also reported to exhibit autocatalytic behavior during its thermal decomposition. TMI therefore needs to be handled with the utmost care and caution, e.g. stored in preferably cool, dry place at 0-25 °C, and operating temperatures under 50 °C in order to avoid deterioration. TMI also reacts extremely violently with oxidizers and polyhalogenated compounds (such as CCl₄ or CBrCl₃), with which TMI is therefore incompatible. Hence, mixtures of TMI with oxidizers and/or polyhalogenated compounds must be avoided as they are potentially dangerous and explosive.

Epitaxial growth method of InGaAs / InP heterogeneous material

The invention relates to the technical field of semiconductors, in particular to an InGaAs / InP heterogeneous material epitaxial growth method, which comprises the following steps of: opening a phosphorane source and a trimethyl indium source to grow a first InP epitaxial layer on a preset substrate; turning off the trimethyl indium source, starting timing, and turning off the phosphine source if the timing duration reaches a first preset duration; opening an arsine source, a trimethyl indium source and a trimethyl gallium source to grow an InGaAs epitaxial layer on the first InP epitaxial layer at a growth rate as a first rate; the flow of the arsine source, the flow of the trimethyl indium source and the flow of the trimethyl gallium source are reduced, the InGaAs epitaxial layer continues to grow, the growth rate is a second rate, and the first rate is larger than the second rate; according to the method, the growth of the InGaAs epitaxial layer can be well realized on the first InP epitaxial layer.
Owner:THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP

A method for preparing triethylindium

The application discloses a preparation method of triethyl indium, and relates to the technical field of metal organic source synthesis, wherein a commonly used indium source is mainly trimethyl indium; the trimethyl indium is in a solid state at normal temperature, and is easy to cause the solid indium source to be easy to be hardened and to have excessive residues; when the solid indium source is used in a machine, the concentration output stability is worse than that of a liquid source; the liquid indium source will become an important indium source in the future; the operation method of the triethyl indium in preparation is more complicated; and the purity of the triethyl indium prepared by purification cannot reach a better ideal state. In the application, n-butyllithium and ethyl iodide are reacted under the protection of inert gas, then the reaction product is reacted with indium chloride to generate triethyl indium; the whole operation is simple, raw materials are easy to obtain, and the product has high purity; under the protection of inert gas, the interference of other solution reagents in the preparation process is reduced; therefore, high-quality triethyl indium raw materials can be purified and processed.
Owner:ANHUI ARGOSUN NEW ELECTRONIC MATERIALS CO LTD +1

In2o3 nanomaterial directional growth method and device, sensor and electronic nose

The application discloses a method and device for directional growth of In2O3 nano material, a sensor and an electronic nose. In the method, a silicon substrate with a heating electrode and a testing electrode is prepared as an In2O3 growth carrier; trimethyl indium is used as an indium gas source, and oxygen is used as an oxygen source; and the In2O3 nano material is directionally grown under the micro-zone heat induction formed by the heating electrode through chemical vapor deposition. The method realizes the high consistency of the gas-sensitive material in each micro-zone on a wafer, thereby realizing the high-consistency processing of the wafer-level sensor.
Owner:XI AN JIAOTONG UNIV

A heterojunction bipolar transistor and its MOCVD epitaxial growth method

This invention belongs to the technical field of heterojunction bipolar transistors (HBTs), specifically relating to a HBT and its MOCVD epitaxial growth method. The HBT provided by this invention includes a transition layer disposed between the base region and the emitter layer. The MOCVD epitaxial growth method includes growing the transition layer on the surface of the base region using a linearly variable-temperature staged pulsed metal-organic chemical vapor deposition (MOCVD) method. During the total growth time of the linearly variable-temperature staged pulsed MOCVD method, PH3 is continuously introduced, and trimethylindium, trimethylgallium, and silane are introduced in single-cycle staged pulses. From the initial time T1 to the initial time TN, the reaction chamber temperature linearly increases from the base region growth temperature to the emitter layer growth temperature. The HBT obtained by the method provided by this invention has high gain, low sheet resistance, and high reliability.
Owner:EPIHOUSE OPTOELECTRONICS CO LTD

Method for preparing high-purity triethylindium

The application discloses a preparation method of high-purity triethyl indium and relates to the technical field of metal organic source synthesis. Nowadays, high-purity indium source is a key raw material for MOCVD technology. Currently, the commonly used indium source is trimethyl indium. However, trimethyl indium is solid at room temperature, which easily causes problems such as excessive solid indium source residue, low solid molecule overflow rate, and hardening and channeling. Therefore, the solid indium source is worse than liquid source in vapor saturation and source content stability. In the application, the halide of indium and triethyl aluminum are reacted to generate triethyl indium under the protection of inert gas. The crude triethyl indium is purified by reduced pressure distillation. The finished triethyl indium is obtained by further purification. The whole process is simple in operation. In addition, the purity of the product is improved under the protection of inert gas, so that the preparation of triethyl indium is not affected by other solvents.
Owner:ANHUI ARGOSUN NEW ELECTRONIC MATERIALS CO LTD +1

Nano ceramic target material and preparation method thereof

The invention relates to a nano ceramic target material and a preparation method thereof, and belongs to the technical field of ceramic target materials. An ultrahigh vacuum atomic layer deposition reaction cavity is adopted, trimethyl indium, tetramethyltin and lanthanum nitrate serve as precursors, nano powder with the particle size is prepared through ultrasonic grinding, low-temperature plasma treatment is assisted for surface optimization, then cold isostatic pressing forming is carried out, segmented sintering is carried out under argon protection, and the target material with the structural formula of In1. 8Sn0. 18La0. 02O3 is prepared. According to the method, accurate doping is realized by utilizing an ALD technology, oxygen vacancy and secondary phase precipitation are inhibited, and uniform combination of particles is promoted by adding a sintering aid. The obtained target material has high density, low resistivity and excellent optical performance, meets the requirements of high-precision optical devices, reduces energy consumption and has wide application prospects.
Owner:JIANGXI SHANHAINA MICROELECTRONICS MATERIALS CO LTD

Pretreatment method for analyzing trace impurities in trimethyl indium

The invention provides a pretreatment method for analyzing trace impurities in trimethyl indium, which comprises the following steps: taking trimethyl indium in an inert atmosphere operation box by adopting a sampling device, placing the trimethyl indium in a dry sampling bottle, sealing the dry sampling bottle to obtain a metal organic compound, and taking the dry sampling bottle out of the inert atmosphere operation box; weighing the total weight of the dry sampling bottle and the metal organic compound, and adding a water-insoluble organic solvent into the dry sampling bottle on a hundred-grade super clean bench, so that the organic solvent reacts with the metal organic compound to obtain a first solution; adding a first dilute acid solution into the dry sampling bottle, reacting concentrated acid with the first solution, and heating to remove alkane to obtain a second solution; and adding a second dilute acid solution into the second solution in the dry sampling bottle to prepare a solution to be detected. The method has the advantages of being easy to operate, good in safety, short in detection time, free of environmental pollution, good in analysis result repeatability, wide in applicability and the like.
Owner:JIANGXI JIAYIN PHOTOELECTRIC MATERIAL