86 results about "Organometallic chemistry" patented technology

A method of forming Pr_XCa_1-xMnO₃ thin films having a PMO/CMO super lattice structure using metalorganic chemical vapor deposition includes preparing organometallic compounds and solvents and mixing organometallic compounds and solvents to form PMO and CMO precursors. The precursors for PMO and CMO are injected into a MOCVD chamber vaporizer. Deposition parameters are selected to form a nano-sized PCMO thin film or a crystalline PCMO thin film from the injection of PMO and CMO precursors, wherein the PMO and CMO precursors are alternately injected into the MOCVD chamber vaporizer. The selected deposition parameters are maintained to deposit the PCMO thin film species having a desired Pr:Ca concentration ratio in a specific portion of the PCMO thin film. The resultant PCMO thin film is annealed at a selected temperature for a selected time period.

A process depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.

The present invention pertains to a single-crystal film of tin oxide synthesis, are semiconductor optoelectronics materials technology. Using metal organic chemical vapor deposition process to tetraethyl tin [Sn (C2H5) 4] for the metal organic source of nitrogen used as a carrier gas, as oxidation by oxygen gas, used metal-organic chemical vapor deposition equipment in a vacuum conditions In the epitomical growth on sapphire substrates tin oxide crystal thin films; prepared for the crystal structure of thin film materials, optoelectronics excellent performance, high stability, good adhesion properties, because of its band gap wider than GaN and ZnO, suitable for use tin oxide to manufacture electronic devices, as well as UV-transparent semiconductor devices.

The invention discloses a preparation method of an enhanced GaN HEMT, comprising the following steps: epitaxially forming a buffer layer, a channel layer, a barrier layer and a p type cap layer in sequence on a substrate through a metal-organic chemical vapor deposition method; preparing a mask layer on the p type cap layer; patterning the mask layer, exposing the p type cap layer of a grid regionpart and then forming a sample; epitaxially forming a p type layer on the exposed p type cap layer of the sample to form a p type grid, namely, epitaxially forming the p type grid in a selected region for the second time; removing the mask layer; etching down to the inside of the channel layer at two sides of the p type cap layer, constructing a table at the two sides of the channel layer and forming table isolation; preparing a source electrode and a drain electrode on the p type cap layer at two sides of the p type grid, and annealing; preparing a grid electrode on the p type grid and forming a device; preparing a passivation layer on the device, wherein the thickness of the passivation layer is higher than the p type grid, and opening the passivation layer of a region of the source electrode, the drain electrode and the grid electrode, namely, exposing the source electrode, the drain electrode and the grid electrode, thereby completing preparation.

The invention relates to a metal-organic chemical vapor deposition machine. The deposition machine comprises a reaction chamber body, a rotating seat, a crystal plate tray, a heater and a jet head. The reaction chamber body is provided with an opening. The rotating seat is arranged in the reaction chamber body. The crystal plate tray is arranged on the rotating seat and is driven by the rotating seat to rotate. The crystal plate tray comprises multiple loading zones with at least two different diameters and the loading zones are arranged on the surface of the crystal plate tray and can load multiple corresponding crystal plates. The heater is arranged below the crystal plate tray and located in the rotating seat. The jet head is covered on the opening of the reaction chamber body, and discharges reaction gas towards the surface of the crystal plate tray. The metal-organic chemical vapor deposition machine can utilize a usage space of a crystal plate tray effectively, greatly improve a production efficiency of an element, increase a production capacity, and give consideration to a utilization rate of a crystal plate tray space and a utilization of a large size crystal plate thereby reducing a production cost.

The invention relates to a Ga-In oxide film that can modulate the width of a band gap and a preparation method thereof. The Ga-In oxide film has a general formula of Ga2 (1-X) In2XO3 and x is equal to 0.1-0.9 in the general formula; as the content of In x is reduced from 0.9 to 0.1, the width of the band gap of film material is increased from 3.72 to 4.58eV. Organic metal chemical vapor deposition technique is adopted and trimethyl gallium (Ga (CH3)3) and trimethyl indium (In (CH3)3) are taken as the source of organic metals; nitrogen is taken as carrier gas; oxygen is taken as oxidizing gas; equipment for organic metal chemical vapor deposition is used and the Ga-In oxide film is produced on a substrate under vacuum condition at 500-800 DEG C. The Ga-In oxide film material of the invention is suitable for manufacturing ultra violet and transparent semiconductor devices due to the band gap with width larger than GaN, In2O3 and ZnO.

The invention discloses a device for medium-temperature organometallic chemical vapor deposition of a TiO2-Al2O3 composite coating and a coating method. An organometallic chemical vapor deposition method and a horizontal furnace device are adopted, and raw materials are pre-mixed in a small deposition chamber, so that dense codeposition of the TiO2-Al2O3 composite coating on the surface of stainless steel within the temperature range of 250-450 DEG C is achieved, and the purpose of restraining coking and carbon deposition on the surface of the stainless steel is achieved.

A high-temp chemical vapor deposition apparatus with communicated multiple reaction chambers for organic metal is composed of gas channel system, at least two reaction chambers with specimen heater, specimen feeding unit, delivering pipeline system, vacuumizing system, tail gase treating and alarm system and operation control system. It features that each reaction chamber can be specially designed according to the requirement of individual MOCVD system to material.

The invention relates to a method for preparing a tin oxide single crystal film with an orthogonal structure, which belongs to the technical field of semiconductor photoelectron materials. The epitaxial preparation method for the tin oxide single crystal film with the orthogonal structure adopts an MOCVD process, uses Sn(C2H5)4 as an organic metal source, uses nitrogen as carrier gas, uses oxygen as oxidizing gas, and uses MOCVD equipment to epitaxially grow the tin oxide single crystal film with the orthogonal structure on an yttrium-doped zirconia single crystal substrate. The material prepared by the invention has the advantages of good photoelectric performance, high stability, good attachment performance and broad application prospect.

The invention discloses a die with a nano structure, comprising a substrate, a cushion layer arranged above the substrate and a die layer which is provided with the nano structure and is arranged above the cushion layer, wherein, the substrate is made of alumina or silicon, the cushion layer is made of gallium nitride, metal or dielectric materials, the die layer is made of materials not mixed with gallium nitride or n type gallium nitride. The invention also discloses a method for producing the die with the nano structure, comprising the following steps: forming the substrate; forming the cushion layer on the substrate; forming the die layer on the cushion layer, in addition, a nanoscale structure is formed on the upper surface of the die layer by adopting the organometallic chemical vapour deposition process or the potassium hydroxide solution wet-type etching method.

Disclosed is a zinc oxide photo-anode film. A zinc oxide photo-anode is manufactured on a substrate with a deposited FTO by means of the organometallic chemistry gas deposition technology, the photoelectrochemical properties of the photo-anode are improved by changing the deposition time and the B2H6 doping flow, and the MOCVD-ZnO is used as the photo-anode for electrolysis of water to obtain the higher photocurrent density. The zinc oxide photo-anode film has the advantages that the preparation method is simple in technology, the deposition temperature is low, the preparation time is short, implementation is easy and repeatability is good; the obtained ZnO photo-anode film has the pyramid-like appearance, incident light absorption of the ZnO photo-anode can be improved, and then incident light utilization of the photo-anode is improved; the zinc oxide photo-anode film is used as the photo-anode of a photoelectrochemical cell, the universality of the ZnO photo-anode can be improved, and industrial production is facilitated.

A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In_xGa_1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the In_xGa_1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

The invention relates to an organic metal chemical vapor deposition device for the high-temperature growth of an oxide film, and belongs to the technical field of the preparation of an oxide film material. The invention particularly relates to a metal organics chemical vapor deposition device for the growth of the oxide semiconductor and other oxide film functional materials under an ultrahigh temperature (more than 1100 DEG C) and the oxygen atmosphere condition. A reaction chamber of the organic metal chemical vapor deposition device consists of a vacuum heating cavity, an inner rotating system, an outer rotating system, a U-shaped flange fixing device (1) with a water cooling function, a torch hollow shaft (2) with a water cooling function, a reaction chamber side wall (5) with a water cooling function, a sprinkling head (6) and a vacuuming system (18); and the torch hollow shaft (2) is divided into a torch body and a torch handle, and the torch handle penetrates through the U-shaped flange base (1). A rotating motor drives the outer rotating system to rotate along the U-shaped flange base (1) through a belt so as to drive a stainless steel rotating shaft (7) as well as a cylindrical quartz support (10) and a circular graphite cover (12) to rotate along the vacuum heating cavity.

The invention relates to a nido-carborane containing organometallic compound crystal and a preparing method thereof, and belongs to the technical field of organometallic chemistry. The structure of the compound is represented and determined by monocrystalline X-ray diffraction, nuclear magnetic resonance, and other methods. The crystal belongs to the monoclinic system and a space group P2<1>/n. The molecular formula of the crystal is C<27>H<37>B9ORuS2, and the molecular weight is 640.05. According to cell parameters, a is equal to 17.8494(15) angstroms, b is equal to 10.2272(9) angstroms, c is equal to 18.7853(16) angstroms, alpha is equal to 90 degrees, beta is equal to 92.9220 (10) degrees and gamma is equal to 90 degrees. 1,2-dicarba-closo-dodecaborane, n-butyllithium, sulfur powder, dichloro(p-cymene)ruthenium(II) dimer and 1,1-diphenyl-2-propyn-1-ol are adopted as raw materials and prepared under mild conditions into the nido-carborane containing organometallic compound that is (p-cymene)Ru(S2C2B9H<10>)(CH-C=C(Ph)<2>).H2O, wherein the p-cymene is 1-methyl-4-isopropyl phenyl. The compound has characteristics of the simple preparing method, a high yield, good repeatability, and the like and provides a novel idea for development of carborane-containing novel materials having good performance and application prospects.

A decorative coating and a method for forming a decorative coating on a substrate (2). The decorative coating comprises an absorbing film (1) to attenuate the transmission of visible light through the coating. The method comprises the steps of bringing the substrate (2) into a reaction space, and depositing the absorbing film (1) on the substrate (2). Depositing the absorbing film (1) on the substrate comprises the steps of forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space, and treating the deposition surface with an organometallic chemical comprising first metal and subsequently purging the reaction space. The steps of forming the preliminary deposit and treating the deposition surface are alternately repeated to increase absorption of the absorbing film (1).

The invention discloses a photovoltaic type quantum well infrared detector with a high working temperature. A molecular beam epitaxy technology or an organometallic chemistry vapor deposition technology is used for growing, a standard semiconductor process is used for manufacturing, a semiconductor multilayer quantum well structure is achieved, and a functional layer is a multicycle quantum well of an asymmetrical structure. The photovoltaic type quantum well infrared detector with the high working temperature can work under the condition that bias voltages are not added or the bias voltages are small and has the excellent advantages of being low in dark currents, high in working temperature (working in an indoor temperature or a quasi indoor temperature), high in detection sensitivity and the like.

The invention relates to a lithium compound and application thereof in the field of organic synthesis, in particular to application of a lithium complex in a hydroboration reaction of nitrile. Compared with the research of the beta-diimine anion ligand on organometallic chemistry, the application research of the beta-ketimine anion ligand is less, and the compound (complex) of the double-anion beta-ketimine ligand and the application thereof and the hydroboration reaction are not reported so far. The compound is applied to the hydroboration reaction of nitrile, and efficient reduction of nitrile and pinacol borane can be achieved.

The invention discloses a kind of siamese twin-core tube for the double-desk high speed light detector from whose side surface the light may enter; it invention refers to a kind of light detector; concretely, refers to the tube core structure of the light detector. The core is one the iron doped semi-insulated semiconductor InP substrate, through the organic metal chemical gas phase deposition technology, the buffer layer2, the subjacent optical waveguide layer3, the light absorbing layer4, the upper optical waveguide layer5, the light limited layer6 and connecting layer7 are generated on along the vertical direction; through the etching technology, it is formed into the upper and the subjacent stage parts like isles; the upper part includes layers from 3 to 7, the horizon plane is in shape of (semiellipse-rectangular-semiellipse); the subjacent part is the second layer, which is a rectangular. Finally through the cleavage technology, the tube core is divided into two light detector tube cores. The structure is simple, the volume is small, the light entrance surface is easy to be understood, the core area can be adjusted, and the assembly is convenient.

The invention provides synthesis of a pH-responding palladium N-heterocyclic carbene chelate and catalytic application thereof. The synthesis process consists of: taking dimethyl sulfoxide as a solvent, adding palladium acetate and a benzoate-containing dibromodiimidazole ionic salt, leaving them to react for 12h at 60DEG C, then raising the temperature to 130DEG C to make them further react for 2h, conducting concentration, carrying out washing with tetrahydrofuran, and performing vacuum drying to obtain a water insoluble N-heterocyclic carbene chelate of palladium; and hydrolyzing the ester group in the chelate by lithium hydroxide, then conducting acidification with hydrochloric acid or hydrobromic acid, thus obtaining the pH-responding palladium N-heterocyclic carbene chelate. The palladium N-heterocyclic carbene chelate synthesized in the invention contains a carboxyl group and has a pH-responding function. The palladium N-heterocyclic carbene chelate has high catalytic activity to the coupling reaction of aryl halides in water, and a catalyst can be separated by adjusting the pH of the reaction system and can be recycled repeatedly. The catalytic system is environment-friendly, thus providing a new path for development of organometallic chemistry and application of N-heterocyclic carbine compounds.

Disclosed is a solution raw material for organic metal chemical vapor deposition having high film-forming characteristics and excellent step coverage. Also disclosed is a complex oxide dielectric thin film formed by using such a raw material. Specifically, an improved solution raw material for organic metal chemical vapor deposition obtained by dissolving one or more organic metal compounds in an organic solvent is disclosed which is characterized in that the organic solvent is 1,3-dioxolane or a mixed solvent obtained by mixing a first solvent composed of 1,3-dioxolane and a second solvent composed of one or more solvents selected from the group consisting of alcohols, alkanes, esters, aromatic series, alkyl ethers and ketones.