Organic metal chemical vapor deposition device for high-temperature growth of oxide film

Abstract

The invention relates to an organic metal chemical vapor deposition device for the high-temperature growth of an oxide film, and belongs to the technical field of the preparation of an oxide film material. The invention particularly relates to a metal organics chemical vapor deposition device for the growth of the oxide semiconductor and other oxide film functional materials under an ultrahigh temperature (more than 1100 DEG C) and the oxygen atmosphere condition. A reaction chamber of the organic metal chemical vapor deposition device consists of a vacuum heating cavity, an inner rotating system, an outer rotating system, a U-shaped flange fixing device (1) with a water cooling function, a torch hollow shaft (2) with a water cooling function, a reaction chamber side wall (5) with a water cooling function, a sprinkling head (6) and a vacuuming system (18); and the torch hollow shaft (2) is divided into a torch body and a torch handle, and the torch handle penetrates through the U-shaped flange base (1). A rotating motor drives the outer rotating system to rotate along the U-shaped flange base (1) through a belt so as to drive a stainless steel rotating shaft (7) as well as a cylindrical quartz support (10) and a circular graphite cover (12) to rotate along the vacuum heating cavity.

Description

technical field [0001] The invention belongs to the technical field of preparation of oxide thin film materials, and in particular relates to a metal organic chemical vapor deposition (MOCVD) equipment for growing oxide semiconductors and other oxide thin film functional materials under ultra-high temperature (greater than 1100°C) and oxygen atmosphere conditions . Background technique [0002] Oxide thin film functional materials, including semiconductor materials (such as ZnO, SnO2, TiO 2 etc.), fluorescent materials (such as YAG, etc.), ferroelectric materials (such as SrTiO 3 ) and superconducting materials (such as YBCO, etc.), with their excellent optical, electrical, and magnetic properties, they have potential applications in civil, communication, and military applications. It has been widely concerned by researchers for a long time and has become a research hotspot. [0003] There are many methods for the growth of oxide thin film functional materials, including ...

AI Technical Summary

Problems solved by technology

However, the biggest scientific problem ZnO faces is p-type doping. After years of research, it has been found that 1) ZnO grown at low temperature is columnar growth, with poor crystal quality and poor repeatability; The MOCVD equipment has undergone technological transformation. Through the combination of bottom heating and top lighting, the reaction temperature can reach 800 degrees. The growth of ZnO has changed from columnar growth to layered growth, and the crystal quality and repeatability have been greatly improved.

2) Theoretical calculations show that replacing O with N is undoubtedly the best choice, but it is very difficult to grow N-doped at low temperature

One is that the furnace wire and the furnace body are exposed in the reaction chamber; the problem it brings is: the oxygen that does not participate in the reaction will corrode the furnace wire furnace body electrode, etc. It is these reasons that make it difficult to achieve high temperature (>1000°C) for oxide MOCVD ) growth

The second is that the rotating shaft passes through the bottom flange, the furnace wire and the furnace body, which brings problems: the mutual restriction and influence on the spatial distribution among the rotating shaft, furnace wire, furnace plate and substrate tray, so that the heat When reaching different parts of the substrate tray, there will be different heat transfer methods, resulting in uneven temperature distribution of the substrate tray

Especially under high temperature conditions, the rotating shaft needs to be cooled with water, which will cause the temperature distribution of the substrate tray to be more uneven

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