The invention relates to a
chromium ion single-doped ultra-
wideband near-
infrared fluorescent material, a preparation method thereof and an LED device, and belongs to the technical field of luminescent materials. The
chemical composition formula of the material is Ca2Sc1-yYyGa3-3xSn2O12: xCr, x is larger than or equal to 0.003 and smaller than or equal to 0.10, and y is larger than or equal to 0.00 and smaller than or equal to 1.00. The material is high in
phase purity, simple in preparation process, simple and convenient to operate, environment-friendly and high in synthesis efficiency. Under excitation of 475-500 nm, the
emission spectrum of the material covers the range of 600-1600 nm, the material has high
luminous intensity in a first near-
infrared region (about 855 nm) and a second near-
infrared region (about 1300 nm), and the
full width at half maximum can reach 200-655 nm. Meanwhile, the material has good absorption in the range of 400-700 nm, can be effectively matched with a commercial
blue light LED
chip, and is suitable for preparing a high-performance near-infrared LED
light source. Compared with the prior art, the material provided by the invention not only can realize ultra-
wideband emission covering a first near-infrared area and a second near-infrared area, but also is adjustable in emission peak position and high in absorption characteristic and commercial
blue light chip compatibility, and is beneficial to development of high-efficiency and high-stability near-infrared LED devices.