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453 results about "Light Cell" patented technology

A cell located in the collecting tube of the nephron..

Small Rb atom frequency marking cavity bubble system

The present invention discloses a miniaturized rubidium atomic frequency standard cavity-cell system, wherein, a microwave cavity cylinder is made from high magnetic permeability material; the microwave cavity cylinder is sleeved with a heating cylinder; a pump light incident port of the heating cylinder is also provided with a convex lens which gathers and transmits rays emitted by a rubidium spectral lamp into a microwave cavity; a C field coil is directly wound on a dielectric cylinder arranged between the microwave cavity cylinder and an absorption cell; a cusp on the tail part of a light-filtering cell is concentrated at the center of a circular plane at the end of the cell; a cusp on the tail part of the absorption cell is concentrated at the edge of a circular plane at the end of the cell; a photocell and a snap-off diode are fixed on the end face of the inner wall of a cavity end cover which can be movably fixed. The present invention has no machinery regulating rod inside the cavity, uses an intracavity frequency doubling mode, adopts a cylindrical TE111 mode and a dielectric filling method to get rid of the complex structure of a magnetic shield cylinder in the prior art, and reduces the volume of the cavity-cell system. As the pump light incident port of the heating cylinder is provided with the convex lens to increase the light intensity of pump light, the performance of the cavity-cell system is guaranteed. A mobile photoelectric component is adopted for cavity frequency fine adjustment, which is convenient for debugging and cannot cause field form distortion.
Owner:SICHUAN TIANAO XINGHUA TIME & FREQUENCY

Photoelectric cell and process for producing metal oxide semiconductor film for use in photoelectric cell

InactiveUS20030150485A1High photoelectric transfer efficiencyExcellent in photoelectric transfer efficiencyPigmenting treatmentMaterial nanotechnologyTitanium oxideElectron
The first photoelectric cell of the present invention comprises: an insulating base having on its surface an electrode layer (1), the electrode layer (1) having on its surface a metal oxide semiconductor film (2) on which a photosensitizer is adsorbed; an insulating base having on its surface an electrode layer (3), the electrode layer (1) and the electrode layer (3) arranged opposite to each other; and an electrolyte sealed between the metal oxide semiconductor film (2) and the electrode layer (3), wherein at least one of the electrode-having insulating bases is transparent; and the metal oxide semiconductor film (2) comprises anatase titanium oxide particles. This first photoelectric cell includes a semiconductor film comprising anatase titanium oxide particles, having a high proportion of photosensitizer adsorbed, so that the electron mobility in the semiconductor film is high to thereby realize excellent photoelectric transfer efficiency. The second photoelectric cell of the present invention comprises: an insulating base having on its surface an electrode layer (1), the electrode layer (1) having on its surface a metal oxide semiconductor layer (2) on which a photosensitizer is adsorbed; an insulating base having on its surface an electrode layer (3), the electrode layer (1) and the electrode layer (3) arranged opposite to each other; and an electrolyte sealed between the metal oxide semiconductor layer (2) and the electrode layer (3), wherein conductive protrusions (4) jutting from the surface of the electrode layer (1) exist, the metal oxide semiconductor layer (2) formed so as to cover the conductive protrusions (4) and the electrode layer (1), and at least one of the electrode-layer-having insulating bases is transparent. In this second photoelectric cell, conductive protrusions are provided on the electrode surface, so that generated electrons not only can rapidly move toward the electrode but also are free from recombining with the photosensitizer. Moreover, in this photoelectric cell, not only is the adsorption proportion of photosensitizer high but also the moving of generated electrons is smooth. Therefore, the second photoelectric cell exhibits excellent photoelectric transfer efficiency.
Owner:CATALYSTS & CHEM

High-efficiency low-cost copper indium gallium selenium / perovskite double-junction solar photocell prepared through all-solution method

The invention discloses a high-efficiency low-cost copper indium gallium selenium / perovskite double-junction solar photocell prepared through an all-solution method. The double-junction solar photocell comprises a metal back electrode, a copper indium gallium selenium absorbing layer, a P-type buffer layer, a window layer, a carrier composite layer, a hole transporting layer, a perovskite absorbing layer, an electron transporting layer and a transparent oxide electrode. The high-efficiency double-junction solar photocell can be prepared through the all-solution method and has the advantages of being low in cost and capable of being produced on a large scale. Copper indium gallium selenium and perovskite serve as the absorbing layers of sunlight; on one hand, the copper indium gallium selenium with the adjustable bandwidth and the high-conversion-efficiency perovskite made of broadband gap materials can effectively cover solar spectra and be utilized efficiently; on the other hand, both the copper indium gallium selenium and the perovskite can be prepared through the all-solution method, so a whole laminating device can have higher conversion efficiency and maintain low production cost at the same time.
Owner:苏州柯利达集团有限公司

Lighting fixture

A night lighting fixture comprising a junction box including at least one front plate, within said junction box an electrical light source and light reflector, said fixture including a visible light detecting photocell, a first opening in said front plate for allowing external ambient light to reach said photocell, said photocell and light source being in electrical communication whereby said photocell is adapted to turn said light source off when the photocell detects ambient light and on when the photocell does not detect ambient light and another opening in said front plate to allow for the passage of light from said electrical light source to provide illumination in the external space. A structural wall having a night lighting fixture comprising a junction box recessed within said wall, at least one front plate which is exposed on the surface of said wall, within said junction box an electrical light source and light reflector, said fixture including a visible light detecting photocell, a first opening in a front surface for allowing external ambient light to reach said photocell, said photocell and light source being in electrical communication whereby said photocell is adapted to turn said light source off when the photocell detects ambient light and on when the photocell does not detect ambient light and another opening in a said front surface to allow for the passage of light from said electrical light source to provide illumination in the external space.
Owner:WEN CHUNG FRANK TSAO

Design method of solar energy uniform light superposition reflective condenser

The invention discloses a design method of a solar energy uniform light superposition reflective condenser, wherein a light receiving surface is a photocell plate or a circular heat collection pipe. The design method is characterized in that a condensing lens consists of a limited number of flat plate reflection mirrors and broken line-shaped reflection mirror slot frames and is placed on a solartracking frame, a precise calculation formula of the width and the position of a space coordinate of each reflection mirror and the detailed steps of the geometric mapping method are deduced accordingto the constraint condition that two parallel light rays reflected by two end points of a line segment of a cross section of each reflection mirror respectively fall on two end points of a line segment of the cross section of the photocell plate or are respectively tangent with the circumference of the cross section of the circular heat collection pipe and the normal line of a mirror surface of the reflection mirror is an angle bisector of an included angle between incident light and reflected light, thereby ensuring that the reflected light of each flat plate reflection mirror is uniformly superposed on the light receiving surface, leading the single-chip output features of the photocell to be consistent, improving the light-emitting efficiency of components, leading the processing of the condenser to be easy and reducing the cost. The calculation formula can be used for optimizing the tilt angle and the nominal focal length of the photocell plate.
Owner:UNIV OF SCI & TECH OF CHINA

Novel SINP silicone blue-violet battery and preparation method thereof

he invention relates to a novel SINP silicone blue-violet battery and a preparation method thereof. The invention uses shallow junctions formed from thermally diffused phosphorus, an ultra-thin SiO2 layer formed by low-temperature thermal oxidization and an ITO dereflection/collection electrode film formed by RF magnetron sputtering to prepares a novel ITO/SiO2/np blue-violet reinforced SINP silicone photo-battery. Preparation method of the invention is to take a silicon single crystal flake which is P type, and has crystallographic orientation of 100, electric resistivity of 2 2omega.cm and thickness of 220mu m, as a substrate. The substrate is cleaned and is etched by routine chemistry, and then is thermally diffused by POC3 liquid source to form n regions (the invention prepares two pieces of novel SINP photo-batteries, one being routine SINP photo-battery having emitting region square resistance of 10 Omega/square and junction depth of 1 Mu m, and the other one being SINP silicone blue-violet battery having emitting region square resistance of 37 Omega/square and junction depth of 0.4 Mu m). Removing the phosphorosilicate glass (HF:H2O=1:10) at front face; steaming Al at back of the silicon chip; thermally oxidizing the silicon chip at 400 to 500 DEG C and condition of V2:O2=4:1 for 15 to 30min to generate a layer of 15 to 20 ultra-thin SiO2 layer, and at the same time alloying the Al at the back. Then RF magnetron sputtering the ITO dereflection/collection electrode film (ITO film is also deposited on the glass to study electrooptical characteristic thereof) having high transmittance and high conductivity, and sputtering a Cu gate electrode by metal mask direct-current magnetron. Finally, cutting the outer edge part of the battery by a diamond excircle downward cutting/a dicing saw so as to prevent short circuit of the edge of the photo-battery.
Owner:SHANGHAI UNIV
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