Novel SINP silicone blue-violet battery and preparation method thereof

Abstract

he invention relates to a novel SINP silicone blue-violet battery and a preparation method thereof. The invention uses shallow junctions formed from thermally diffused phosphorus, an ultra-thin SiO2 layer formed by low-temperature thermal oxidization and an ITO dereflection/collection electrode film formed by RF magnetron sputtering to prepares a novel ITO/SiO2/np blue-violet reinforced SINP silicone photo-battery. Preparation method of the invention is to take a silicon single crystal flake which is P type, and has crystallographic orientation of 100, electric resistivity of 2 2omega.cm and thickness of 220mu m, as a substrate. The substrate is cleaned and is etched by routine chemistry, and then is thermally diffused by POC3 liquid source to form n regions (the invention prepares two pieces of novel SINP photo-batteries, one being routine SINP photo-battery having emitting region square resistance of 10 Omega/square and junction depth of 1 Mu m, and the other one being SINP silicone blue-violet battery having emitting region square resistance of 37 Omega/square and junction depth of 0.4 Mu m). Removing the phosphorosilicate glass (HF:H2O=1:10) at front face; steaming Al at back of the silicon chip; thermally oxidizing the silicon chip at 400 to 500 DEG C and condition of V2:O2=4:1 for 15 to 30min to generate a layer of 15 to 20 ultra-thin SiO2 layer, and at the same time alloying the Al at the back. Then RF magnetron sputtering the ITO dereflection/collection electrode film (ITO film is also deposited on the glass to study electrooptical characteristic thereof) having high transmittance and high conductivity, and sputtering a Cu gate electrode by metal mask direct-current magnetron. Finally, cutting the outer edge part of the battery by a diamond excircle downward cutting/a dicing saw so as to prevent short circuit of the edge of the photo-battery.

Description

technical field [0001] The invention relates to a method for preparing a novel silicon photovoltaic cell with a SINP structure, and belongs to the technical field of a method for preparing a novel silicon solar cell. Background technique [0002] In today's society where energy is gradually scarce, people urgently need to find a renewable energy to replace non-renewable energy. As we all know, the sun gives the earth endless heat, so people point their targets at the sun. [0003] Blue-violet light-enhanced silicon photovoltaic devices have important applications in solar cells, photometry, chromaticity, and optical precision measurement. In recent years, from the perspective of preventing the global warming effect, protecting the environment and replacing petroleum energy, the use of solar power has received great attention. At present, the output of monocrystalline silicon solar cells ranks first among all kinds of photovoltaic cells, but because the spectral response of...

AI Technical Summary

Problems solved by technology

Whereas the n produced by the traditional diffusion method + In p-junction silicon photovoltaic cells, there is a "dead layer" with a high phosphorus concentration near the surface of the emission region; the lattice distortion in this region is large and the dislocation density is high, which seriously affects the collection efficiency of short-wavelength photogenerated carriers, resulting in conventional crystalline silicon photovoltaic cells. Rapid decline in response to blue-violet light

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