A
germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an
isolation layer on a substrate using a shallow trench; forming a
silicon-
nitride layer on the substrate, and selectively
etching the
silicon nitride layer to
expose source and drain regions; injecting impurities onto a surface of the substrate over the exposed source and drain regions using
delta-
doping to form a
delta-
doping layer; selectively growing a
silicon germanium layer containing impurities on the
delta-
doping layer; rapidly annealing the substrate and forming source and drain regions by
diffusion of the impurities; depositing an insulating layer on the entire surface of the substrate;
etching the insulating layer and forming source and drain contact parts to be in contact with source and drain terminals; depositing
metal over the insulating layer having the source and drain contact parts thereon and forming a
metal silicide layer; and after forming the
silicide layer, forming the source and drain terminals to be in contact with the
silicide layer. Accordingly, the source and drain regions having a
shallow junction depth may be ensured by forming the source and drain regions through annealing after delta-doping and selectively growing the
silicon germanium layer containing high-concentration impurities. Also, the
germanium silicide layer is stably formed by the
silicon germanium layer grown in the source and drain regions, and thus
contact resistance is lowered and
driving current of the device is improved.