Method for manufacturing shallow junction complementary bipolar transistor

Abstract

The invention discloses a method for manufacturing a shallow junction complementary bipolar transistor. The main technological steps of the method are as follows: 1) forming an SOI material chip by the methods of silicon / silicon bonding, thinning and polishing; and 2) manufacturing the shallow junction complementary bipolar transistor by using the methods of deep-trench etching, deep trench isolation with polysilicon backfilling and a shallow isolation wall and combining with a longitudinal NPN pipe with a shallow junction polysilicon emitter and the complementary bipolar technology which is compatible with the longitudinal PNP pipe. The method improves the pressure resistance (BVCEO is greater than 5.0V) and the Early voltage of the complementary bipolar transistor and simultaneously takes into consideration of the characteristic frequency. The method greatly reduces the drain current of an isolation junction, and the drain current of the shallow junction complementary bipolar transistor is smaller than 10<minus 12>A. The method can be widely applied in the field of manufacture of high-speed complementary bipolar technologies.

Description

technical field [0001] The invention relates to a manufacturing method of a shallow-junction complementary bipolar transistor, which is directly applied to the manufacturing field of high-speed complementary bipolar transistors. Background technique [0002] Complementary bipolar technology (CB) has a history of more than 30 years. In the early days, PNP transistors and NPN transistors were mainly used to form a complementary structure. Around 1986, junction isolation CB technology was used. The main advantage of the CB process is that it can obtain high-frequency vertical NPN and PNP transistors with extremely small parasitic capacitance at the same time. This complementary bipolar transistor has a high characteristic frequency f under a certain current. T , so that the integrated operational amplifier can have better frequency characteristics and bandwidth characteristics under a small quiescent current. However, the complementary bipolar process is difficult to manufactu...

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Problems solved by technology

The advantage of these processes is that the characteristic frequency is high, but when applied to high-precision analog integrated circuits, the withstand voltage of its transistors is low (BV CEO <3.0V, it is difficult to meet the high-precision and dynamic adjustment requirements of higher-voltage high-speed analog integrated circuits

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