467results about How to "Improve injection efficiency" patented technology

The invention discloses a secondary battery and a power utilization device, the secondary battery comprises a shell, an electrode assembly, a top cover plate, an insulating part and a convex part, the top cover plate is connected with the shell, and a liquid injection hole is formed in the top cover plate; the insulating part is connected with one side, facing the electrode assembly, of the top cover plate; the protruding piece comprises an extending part and a blocking part. The extending part is connected with the side, away from the top cover piece, of the insulating piece. The blocking part is connected to the side, away from the insulating part, of the extending part, and the orthographic projection of the blocking part on the top cover piece covers at least part of the liquid injection hole. At least one flow guide hole is formed in the extension part and is communicated with the liquid injection hole; the sum of the area of the at least one flow guide hole is S1 mm < 2 >, the area of the liquid injection hole is S2 mm < 2 >, and S1 / S2 is larger than or equal to 1 and smaller than or equal to 4. After the secondary battery meets the range that S1 / S2 is larger than or equal to 1 and smaller than or equal to 4, the liquid injection efficiency of the electrolyte is further improved while the strength of the protruding pieces is improved, and the production yield of the secondary battery is remarkably increased.

The invention discloses a secondary battery, a battery pack and a power utilization device, the secondary battery has a first direction and a second direction which are intersected, the secondary battery comprises a shell, an electrode assembly and a top cover assembly, the shell is provided with a containing cavity, the electrode assembly is arranged in the containing cavity, the top cover assembly comprises a top cover piece, a lower insulating part and an electrode terminal, the top cover piece is connected with the shell, and the lower insulating part is arranged in the top cover piece. The top cover plate is provided with a first liquid injection hole; the lower insulating part is connected to one side, facing the electrode assembly, of the top cover plate, and the electrode terminal penetrates through the top cover plate and the lower insulating part; the lower insulating part comprises a body and a turbulent flow part, and the body is provided with a second liquid injection hole communicated with the first liquid injection hole; the turbulent flow part is connected to the side, away from the top cover piece, of the body, the turbulent flow part and the electrode terminal are arranged at an interval, a liquid outlet is formed in the side, facing the electrode terminal, of the turbulent flow part, and the liquid outlet communicates with the second liquid injection hole; and along the second direction, the minimum distance between the liquid outlet and the electrode terminal is L1, the size of the top cover plate is L2, and L1 / L2 is greater than or equal to 0.004 and less than or equal to 0.5.

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, an intrinsic semiconductor layer, an N-type semiconductor layer, a multi-quantum well layer, an electron blocking layer and a P-type semiconductor layer. The P-type semiconductor layer comprises a Si3N4 layer, a first superlattice layer and a second superlattice layer which are sequentially stacked on the electron blocking layer, the first superlattice layer comprises a Mg-doped Al < x > Ga < 1-x > N layer and a Mg-doped GaN layer which are alternately stacked, and the second superlattice layer comprises a non-doped GaN layer and a Mg-doped In < y > Ga < 1-y > N layer which are alternately stacked. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.

The invention relates to the technical field of needleless injectors, and discloses novel needleless injector equipment which is composed of a shell, a liquid medicine bottle and an injection mechanism. The liquid medicine bottle is communicated with the injection medicine cylinder of the injection mechanism, and when injection is needed, liquid medicine is firstly extracted into the injection medicine cylinder from the liquid medicine bottle through the first liquid inlet hole. One end of the cylindrical channel is connected with the nozzle, and the other end of the cylindrical channel is connected with the piston rod. The power assembly controls movement of the piston rod through the excitation assembly. A conduction valve is further arranged in the injection medicine cylinder, and a second annular channel is formed through the outer annular groove and the inner annular groove so as to prevent liquid medicine from flowing back. A small medicine storage tube is arranged at the end, close to the injection tube, of the piston rod and used for storing liquid medicine. In the injection process, the power assembly pulls the piston rod to form vacuum negative pressure, so that liquid medicine is sucked into the injection tube through the third medicine inlet hole and the small medicine storage tube. The power assembly pushes the piston rod to reversely move at a high speed, and liquid medicine is injected at high pressure through the injection pipe and the nozzle.

The invention provides an LED epitaxial wafer, an LED chip and a preparation method of the LED epitaxial wafer, and belongs to the technical field of light emitting diodes, the LED epitaxial wafer comprises a substrate and an epitaxial layer, the epitaxial layer comprises an n-type electronic layer, an n-type electronic barrier layer, an active layer, a p-type hole barrier layer, a p-type hole layer and a p-type window layer which are sequentially stacked, the p-type window layer comprises two tunnel junction structures and superlattice units which are clamped between the two tunnel junction structures and are periodically distributed in the stacking direction, each tunnel junction structure comprises a p-type doped InP sub-layer, an undoped InP sub-layer and an n-type doped InP sub-layer which are sequentially stacked, and each superlattice unit comprises an Al < x > P sub-layer and a Ga < 1-x > P sub-layer which are sequentially stacked. The tunnel junction structure and the superlattice structure formed by the superlattice units are introduced into the p-type window layer, so that the injection efficiency of current carriers can be improved, the resistance can be reduced, and the current expansion capability can be improved.

The invention provides an erasing method of a flash memory unit. The flash memory cell includes a memory transistor and a gate transistor connected in series. The erasing method comprises the steps that erasing voltages are applied to electrodes of the flash memory unit and gate electrodes of transistors, the erasing voltages applied to the gate electrodes of the erased memory transistors are lower than second power supply voltages, and therefore the channel hot electron induced hot hole injection physical effect occurs. Therefore, hot holes in the channel are attracted into the storage medium layer to realize erasing. Compared with the existing band-to-band tunneling hot hole (BBHH) erasing method, the erasing method of the flash memory unit disclosed by the invention has wider hole distribution and higher injection efficiency, so that the erasing method disclosed by the invention has higher erasing speed, larger erasing window, smaller hot carrier damage, lower leakage current and higher durability and reliability.

According to the GaN-based LED epitaxial structure, the preparation method thereof and the LED chip provided by the invention, electron leakage is reduced through the electron blocking layer, and meanwhile, the hole injection layer comprising the thin AlN layer is adopted between the multi-quantum well layer and the electron blocking layer in the epitaxial structure, so that the barrier barrier height during hole transport can be reduced, and the hole transport efficiency can be improved. In addition, an effective path for hole tunneling is provided, energy during hole injection is increased, hole injection efficiency is remarkably improved, the concentration of holes injected into the multi-quantum well layer is increased, and then the luminous efficiency of the LED is improved.

The invention relates to the technical field of injection molds, in particular to a plastic product processing injection mold with a quantity control conveying structure, which comprises a base, a fixed mold and a movable mold are arranged at the top of the base, a material conveying assembly is arranged at the top of the base, the material conveying assembly comprises a conveying pipe, and a material melting tank is arranged above the conveying pipe; the material conveying assembly is combined with the material melting tank and the air suction assembly, during injection molding, the adjustable quantity-controlled conveying effect is achieved, meanwhile, air in the injection molding cavity is extracted synchronously, and the injection efficiency of molten plastic is accelerated in an auxiliary mode; during material pumping, a negative pressure environment is formed in the conveying pipe, molten plastic is automatically and rapidly pumped, the problem that the injection molding quality of plastic products is low due to the fact that outside air and water vapor cooperate with the molten plastic to be injected into an injection molding cavity is solved, meanwhile, the pumped air is used for accelerating the cooling efficiency after injection molding in the discharging process, and the injection molding quality and efficiency are improved.

The invention relates to the technical field of photoelectricity, and discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and an LED, the light-emitting diode epitaxial wafer comprises a substrate, and the substrate is sequentially provided with a buffer layer, a non-doped GaN layer, an N-type GaN layer, a stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer, and a P-type GaN layer; the stress release layer comprises an In < x > Ga < 1-x > N / GaN superlattice layer, a highly-doped N-type GaN layer, a multi-quantum well structure layer and an undoped Al < z > Ga < 1-z > N layer which are stacked in sequence, the multi-quantum well structure layer comprises In < y > Ga < 1-y > N layers and first GaN layers which are stacked alternately, the value range of x is 0.01-0.2, the value range of y is 0.1-0.5, and the value range of z is 0.01-0.2. The light-emitting diode epitaxial wafer provided by the invention improves the light-emitting efficiency of the diode and reduces the forward and reverse electric leakage phenomenon.

The invention provides a semiconductor laser element and a light-emitting device. An electron blocking layer is arranged between a second coating layer and a second waveguide layer of the semiconductor laser element; the second semiconductor layer is doped with a P-type dopant, the P-type dopant in the electron blocking layer has at least one doping concentration peak, the doping concentration of Mg at the doping concentration peak is smaller than the maximum doping concentration of the P-type dopant in the second semiconductor layer, and the P-type dopant in the electron blocking layer gradually approaches the direction of the electron blocking layer. The doping concentration of the P-type dopant in the second coating layer is provided with a plurality of subareas, and the doping concentration curve of the P-type dopant is gradually reduced along the plurality of subareas. Due to the descending trend of the Mg doping concentration in the second semiconductor layer, it can be guaranteed that the second semiconductor layer can provide enough holes, the hole injection efficiency in the quantum well layer is improved, and the light emitting efficiency is improved. Meanwhile, due to the arrangement of the second semiconductor layer, light absorption can be reduced, and the light emitting effect of the device is improved.

The mixed injection device comprises a handheld body and a detachable needle head assembly, the handheld body comprises a holding rod and a pushing rod, the pushing rod is located in a containing cavity of the holding rod, the pushing rod is connected with a power assembly, and the power assembly is connected with the handheld body. The pushing rod is driven by the power assembly to move along the axis of the containing cavity; the detachable needle head assembly comprises an injection cavity, a pushing and injecting plug and an injection head, and the pushing and injecting plug drives a medicament in the storage cavity to flow to the injection head through the injection outlet; the device can be used in the laparoscopic surgery process, the two independent storage cavities are formed in the position of the injection cavity, the mixed injection process of multiphase medicine can be achieved, the multiphase medicine can be mixed and accurately injected to the position, required by the surgery, in the abdominal cavity, the injection efficiency in the laparoscopic surgery process is improved, and the pain of a patient is relieved; and the mixed injection device adopts a detachable structure, so that the cost is lower, the disinfection and maintenance are easy, and the popularization and application of the product are facilitated.

The embodiment of the invention provides a liquid injection system and a liquid injection method. The liquid injection system comprises a rotating device, a liquid injection device, a liquid preparation mechanism, a feeding and discharging station, a liquid supplementing buffering station, a transferring mechanism, a first weighing device, a second weighing device and control equipment. The rotating device is provided with a battery placing position. And the liquid injection device is arranged on the battery placement position and is configured to inject liquid into the battery on the battery placement position. And the liquid preparation mechanism is configured to prepare liquid for the liquid injection device passing through the liquid preparation area of the liquid preparation mechanism. And the loading and unloading station is configured to place a battery to be injected and a battery after injection. And the liquid supplementing cache station is configured to cache the battery to be supplemented with liquid. The transfer mechanism is configured to move the battery. And the first weighing device is configured to weigh the battery after liquid injection. And the second weighing device is configured to weigh the battery to be filled with liquid. According to the liquid injection system provided by the embodiment of the invention, automatic liquid supplementing of the battery can be realized, and the automation degree of liquid injection of the battery is improved.

The invention provides an infrared detector reading circuit based on a dark current suppression structure, which comprises a dark current suppression circuit, an integrating circuit, a double sampling circuit, a source follower, a differential amplification circuit and an output buffer circuit which are electrically connected in sequence, and also comprises a sequential logic circuit, the dark current suppression circuit is used for generating a controllable current which is not influenced by temperature change, and the current is mirrored and then used for counteracting the dark current of the infrared detector; the sequential logic circuit is used for providing row selection logic, column selection logic and a sampling time sequence when a target pixel is selected from an infrared detector pixel array; the reading circuit can read the current signal of the target pixel according to the row selection logic, the column selection logic and the sampling time sequence; according to the invention, the signal-to-noise ratio of the readout system is improved by suppressing dark current, the function of reading out according to the column is realized based on the sequential logic circuit, the noise interference among the readout circuits in the array can be effectively reduced, and the focal plane array readout circuit is suitable for preparing a large-array-scale focal plane array readout circuit.

The utility model discloses essence filling equipment which comprises a rack, a material storage tank, a conveying device, a filling assembly, a liquid pumping assembly and a lifting driving mechanism, each filling assembly comprises two filling assemblies, and each filling assembly comprises a filling head and a material conveying pipe; each set of liquid extraction assembly comprises two sets of liquid extraction assemblies, each set of liquid extraction assembly comprises a liquid extraction piston cylinder, a liquid inlet pipe, a liquid outlet pipe, a liquid inlet one-way valve and a liquid outlet one-way valve, a liquid extraction containing cavity, a movable piston, a liquid inlet pipe and a liquid outlet pipe are arranged in the liquid extraction piston cylinder, and the movable piston is connected with the liquid extraction piston cylinder and communicates with the liquid extraction containing cavity; the liquid outlet pipes are connected with the material conveying pipes in the corresponding filling assemblies through liquid outlet one-way valves; the lifting driving mechanism is connected with the filling head and a movable piston of the liquid pumping piston cylinder, drives the filling head to ascend and descend so as to be away from or close to the conveying device platform and can drive the movable piston to move up and down. According to the essence filling equipment, the structure of the filling equipment can be simplified, and the liquid filling efficiency can be improved.

The invention belongs to the technical field of heterojunction bipolar transistors, and particularly relates to a heterojunction bipolar transistor and an MOCVD epitaxial growth method thereof. The heterojunction bipolar transistor provided by the invention comprises a transition layer arranged between a base region and an emission layer, and the MOCVD epitaxial growth method comprises the step of growing the transition layer on the surface of the base region by adopting a linear variable-temperature staged pulse metal organic chemical vapor deposition method, pH3 is continuously introduced within the total growth time of the linear variable-temperature staged pulse metal organic chemical vapor deposition method, and trimethyl indium, trimethyl gallium and silane are introduced in a single-cycle staged pulse manner; and the temperature of the reaction chamber is linearly increased from the base region growth temperature to the emission layer growth temperature within the time from the T1 initial moment to the TN initial moment. The heterojunction bipolar transistor obtained by the method provided by the invention is large in gain, low in sheet resistance and good in reliability.

The invention relates to the technical field of photoelectricity, and discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and an LED chip, the light-emitting diode epitaxial wafer comprises a substrate, and the substrate is sequentially provided with a buffer layer, a non-doped GaN layer, an N-type GaN layer, a combination layer and a P-type GaN layer; the combined layer comprises an electron consumption layer and a wave band layer which are stacked in sequence, the electron consumption layer comprises Mg-doped AlGaN layers and BN layers which are stacked alternately, the wave band layer comprises a medium wave layer, a short wave layer and a long wave layer which are stacked in sequence, the medium wave layer comprises Ga plane polarization GaN quantum barrier layers and first InGaN quantum well layers which are stacked alternately, and the first InGaN quantum well layers are stacked alternately. The short-wave layer comprises N-plane polarized GaN quantum barrier layers and second InGaN quantum well layers which are alternately stacked, and the long-wave layer comprises Ga-plane polarized AlGaN quantum barrier layers and third InGaN quantum well layers which are alternately stacked. The light-emitting diode epitaxial wafer provided by the invention can reduce electron overflow and weaken QCSE in the multi-quantum well layer.

The invention discloses a light-emitting epitaxial wafer and a preparation method thereof, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a first electron barrier layer, a first P-type semiconductor layer, a second electron barrier layer and a second P-type semiconductor layer. The first electron blocking layer and the second electron blocking layer are both of a single-layer or multi-layer structure formed by an AlGaInN material, and the barrier height of the first electron blocking layer is larger than that of the second electron blocking layer; the first P-type semiconductor layer is of a single-layer or multi-layer structure formed by a Mg-doped AlGaInN material, the second P-type semiconductor layer is of a single-layer or multi-layer structure formed by a Mg-doped GaN material, and the doping concentration of the first P-type semiconductor layer is larger than that of the second P-type semiconductor layer. By implementing the invention, the luminous efficiency of the light-emitting diode based on the light-emitting diode epitaxial wafer can be improved.

The invention provides a planar electrode for spinal cord electrical stimulation and a preparation method thereof, and belongs to the technical field of medical instruments, and specifically, the planar electrode comprises a flexible substrate, electrode stimulation points, a conductive circuit, a bonding pad and a flexible insulating layer; a modification layer is deposited on the upper surface of the electrode stimulation point, the modification layer forms a grass-shaped morphology with forest leaves, and the modification layer is a platinum layer or a platinum-iridium alloy layer. A platinum layer or a platinum-iridium alloy layer is adopted as a modification layer, the effect of reducing impedance can be achieved, compared with a traditional plane morphology, the grass-shaped morphology with the forest blades can greatly increase the contact area between a film layer and tissue, the impedance is effectively reduced, dissipation of current on an electrode and a biological tissue interface can be reduced through the low impedance, and the service life of the electrode and the biological tissue interface is prolonged. Charge injection efficiency is improved, heating is reduced, tissue thermal damage is avoided, meanwhile, the platinum-iridium alloy material is reversible in chemical reaction in the electrical stimulation process, and toxic substances or material loss caused by the reaction cannot be generated.

The invention belongs to the technical field of organic semiconductor photoelectricity, and discloses a triphenylamine dicarboxyl-containing self-assembly hole transport material, a synthesis method and application of the triphenylamine dicarboxyl-containing self-assembly hole transport material as a photoelectric device. The triphenylamine dicarboxyl group is used as an anchoring group, and a bridging unit and a hole transport unit are introduced into a molecular structure through a self-assembly monomolecular layer strategy, so that the hole transport material containing the triphenylamine dicarboxyl group is obtained; the technical problems of poor stability, poor device performance and the like of small organic molecules with anchoring groups in the prior art can be solved. The triphenylamine dicarboxyl group is introduced into the hole transport material, so that the efficiency of a photoelectric device can be improved, the service life of the photoelectric device can be prolonged, and the hole transport material comprises a perovskite solar cell, a perovskite light-emitting diode, a quantum dot light-emitting diode and the like.

The utility model relates to the technical field of bridge reinforcing equipment, in particular to a glue injection device for bridge reinforcing, which comprises a base, one side of the top surface of the base is fixedly connected with a stirring box, one side of the stirring box is fixedly connected with a connecting pipe, and one side of the top surface of the base is fixedly connected with a guide rail. A guide rail is arranged on the top face of the base, a sliding block moving in the length direction of the guide rail is arranged in the guide rail, a suction pump is fixedly connected to one side of the sliding block, a glue injection pipe is fixedly connected to the output end of the suction pump, a first supporting frame is fixedly connected to one side of the top face of the base, and a drilling head is arranged on the bottom face of the first supporting frame. The bridge glue injection device has the advantages that a first air cylinder, a third motor and a drilling head are matched, so that a bridge can be drilled firstly to facilitate subsequent glue injection, and a first motor is arranged to drive a stirring frame to continuously stir a glue solution in a stirring box to prevent the glue solution from being solidified; the suction pump, the connecting pipe and the glue injection pipe are arranged to be matched for glue injection.

The GaN-based compound semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and an electron spin state regulation and control layer is arranged between the lower limiting layer and the lower waveguide layer. And designing piezoelectric polarization coefficient distribution of a first electron spin state regulation layer and a second electron spin state regulation layer in the electron spin state regulation layer, and a relation of piezoelectric polarization coefficients among the lower limiting layer, the lower waveguide layer, the first electron spin state regulation layer and the second electron spin state regulation layer. The performance of the semiconductor laser element can be improved.

The semiconductor laser comprises an N-surface electrode, an N-type substrate, an N-type buffer layer, an N-type limiting layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type limiting layer, an ohmic contact layer 109 and a P-surface electrode which are arranged in sequence, injection regions and non-injection regions are arranged in the P-type limiting layer, the non-injection regions are arranged at the two ends of the injection regions in the direction parallel to the plane where the P-type limiting layer is located, the non-injection regions are formed by the N-type barrier layer, and the injection regions are formed by the P-type limiting layer. Based on the above scheme, current lateral diffusion can be prevented or at least weakened, accumulation of current carriers can be inhibited, the injection efficiency of the current can be improved, and high-power, low-current threshold and conversion rate output can be realized; therefore, the near-field / far-field divergence angle of the semiconductor laser can be reduced to a certain extent, and the light beam quality and brightness of the semiconductor laser are improved.

The invention discloses a wide bandgap power diode with a periodic composite anode, which comprises a wide bandgap semiconductor material substrate layer, a third anode groove, a wide bandgap semiconductor material epitaxial layer, and a periodic first anode groove and a periodic second anode on the wide bandgap semiconductor material epitaxial layer from bottom to top, a first dielectric layer and a second dielectric layer are sequentially arranged on the upper surfaces of the first anode groove and the wide bandgap semiconductor material epitaxial layer, a second dielectric layer is arranged on the upper surfaces of the second anode groove and the wide bandgap semiconductor material epitaxial layer, and a third dielectric layer is arranged on the third anode groove. And a metal anode and a metal cathode are respectively arranged on the upper surface of the wide bandgap semiconductor material epitaxial layer and the lower surface of the wide bandgap semiconductor material substrate layer. Benefited from the periodic composite anode structure, the device has the performance advantages of high current density, high breakdown voltage, low on-resistance and low reverse electric leakage.

The invention provides an interface system used for spinal cord electrical stimulation and a spinal cord electrical stimulation electrode device, and belongs to the technical field of medical instruments, the interface system comprises a circuit board and a flip connector, the flip connector is welded on the circuit board, the flip connector is provided with an electrode pad jack used for insertion of an electrode pad, and the flip connector is connected with the circuit board. And the flip cover can be opened and closed in a flip manner so as to fix the electrode bonding pad. The interface system for spinal cord electrical stimulation comprises a circuit board and a flip cover connector, the flip cover connector is welded on the circuit board, and the flip cover connector is provided with an electrode bonding pad jack for inserting an electrode bonding pad and a flip cover capable of being opened and closed in a flip mode to fix the electrode bonding pad. By adopting the flip connector, the electrode bonding pad can be quickly inserted and detached, the design is more reasonable, and an operator can conveniently insert and pull out the electrode bonding pad.

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer. The multi-quantum well layer sequentially comprises a first multi-quantum well layer, an end well layer and an end barrier layer, the first multi-quantum well layer comprises a quantum well layer and a quantum barrier layer, and the end barrier layer sequentially comprises an AlInGaN layer, a superlattice layer, an AlN layer, a first boron-containing nitride layer and a second boron-containing nitride layer; the superlattice layer comprises AlGaN layers and Mg-doped GaN layers which are alternately stacked; the first boron-containing nitride layer and the second boron-containing nitride layer are BGaN layers and / or BInGaN layers and are doped with Mg, and the Mg doping concentration of the first boron-containing nitride layer and the second boron-containing nitride layer is larger than that of the Mg-doped GaN layer. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.

The utility model relates to the field of garden protection equipment, in particular to a high-pressure minimally invasive forest tree injection machine which is characterized in that a control box is arranged at the lower end of a handle of an electric drill main body, a liquid guide handle is arranged between the control box and a rotating shaft shell, a liquid outlet is formed in a drill bit, and a liquid inlet is formed in the control box. A liquid flowing channel communicated with the liquid inlet and the liquid outlet is formed in the drill bit, the rotating shaft core, the rotating joint shell, the liquid guide handle and the control box, and liquid medicine in the medicine box is sequentially guided into the control box, the liquid guide handle, the rotating joint shell, the rotating shaft core and the drill bit through the pressurizing mechanism and then is driven into a tree trunk. Two-hand operation and a hydraulic liquid guide system are introduced, injection stability and accuracy are improved, the drill bit is reasonable in design, an intelligent control system and a cleaning function are arranged, operation is convenient and fast, and liquid medicine waste is effectively prevented. The injection efficiency, the accuracy and the operation convenience are improved.

According to the lithium ion battery and the liquid injection method thereof provided by the invention, the electrolyte can flow through the first through hole, the second through hole and the third through hole and is injected into the shell to infiltrate the battery cell, and the second through hole is formed in the positive pole, so that opening formation can be realized after one-time liquid injection; after the opening is formed, the first through hole, the second through hole and the third through hole are used for secondary liquid injection, and the sealing bead is welded in the second through hole of the positive pole post to seal the second through hole after the secondary liquid injection, so that the battery structure can change the traditional primary liquid injection, the secondary liquid injection is realized, the liquid injection efficiency is greatly improved, and the service life of the battery is prolonged. The secondary liquid injection can enable the pole piece to be better infiltrated by the electrolyte, the service life of the battery cell is prolonged, the battery structure can change the traditional closed formation, realize open formation and discharge gas generated during formation into the battery cell, space is provided for secondary liquid injection, internal pressure is reduced, the safety of the product is improved, and the service life of the product is prolonged.

The present invention provides a non-contact multi-channel high-speed injection valve, which can effectively solve the existing screen printing production mode in the industries of clothing fabrics, shoe materials, luggage fabrics, etc., which uses templates as references, draws lines with manual hand-held brushes inefficiently, and causes environmental pollution and energy waste; the technical solution is: the high-speed injection valve is composed of an actuator, a flow channel component, an ink and solvent container component, and a high-frequency electromagnetic valve drive mechanism. The side of the high-speed injection valve actuator is tightly connected to the high-frequency electromagnetic valve drive mechanism by a sealing pipe threaded joint. The compressed air passing through the electromagnetic valve drive mechanism drives the internal piston rod of the high-speed injection valve actuator to move upward, and the piston rod is quickly reset under the reaction force of the double high-strength compression spring to drive the piston rod downward, impacting the ink in the lower nozzle to be ejected from the small hole to achieve non-contact ink injection work.

The invention discloses a high-energy metal ion implanter. The high-energy metal ion implanter comprises an ion source system, a movable electrode, an accelerator, a deflection system, a scanning system and a target chamber system which are arranged in sequence, the ion source system focuses laser on the surface of a refractory metal target material for bombardment to generate refractory metal plasma; the movable electrode is used for leading out a refractory metal ion beam; the accelerator is used for accelerating the refractory metal ion beam; the deflection system is used for performing mass-to-charge ratio screening on the accelerated ion beam; and the scanning system is used for controlling the screening ion beam to scan the material surface in the target chamber system. According to the method, the laser is focused on the surface of the refractory metal target material for bombardment to generate the refractory metal plasma, so that the flow intensity of the refractory metal ion beam is improved, and the injection efficiency and the injection effect are improved.

The utility model relates to a baby chick vaccine injection device which comprises a bottom box, a liquid storage barrel and a control module, a spiral electric heating tube and an electric push rod are arranged at the top of the bottom box, the electric push rod is connected with a piston, a cylinder body and a supporting seat are arranged on the side wall of the bottom box, the piston is arranged in the cylinder body in a sliding mode, and a liquid inlet one-way valve and a liquid outlet one-way valve are arranged at the bottom of the cylinder body. The liquid inlet one-way valve is connected to the top of the bottom box, the liquid discharging one-way valve is connected with a liquid discharging pipe, the supporting seat is connected with a pedestal through an elastic mechanism, a trigger switch is arranged on the supporting seat, a needle head is arranged on the pedestal, a telescopic hose is connected between the liquid discharging pipe and the needle head, the liquid storage cylinder is arranged on the top of the bottom box, and a stirring mechanism and a temperature sensor are arranged in the liquid storage cylinder. The baby chick automatic injection device can automatically inject baby chicks, is favorable for improving the vaccine injection effect, can also perform constant-temperature heating on vaccines before injection, and is favorable for the vaccine injection effect.