142results about How to "Facilitate horizontal expansion" patented technology

The invention discloses an LED (Light Emitting Diode) epitaxial structure with a P (Positive) type superlattice and a preparation method thereof. The epitaxial structure comprises a substrate, wherein a GaN (Gallium Nitride) buffer layer, an undoped GaN layer, an n (negative) type GaN layer, a multi-quantum well luminous layer, a first P type GaN layer, a P type AlGaN (Aluminium Gallium Nitride) electronic blocking layer and a second P type GaN layer are sequentially arranged on the substrate from bottom to top, and the P type superlattice formed by a PInGaN (P type Indium Gallium Nitride) potential well layer and a PAlGaN potential barrier layer in a periodic interactive overlapping way is arranged between the P type AlGaN electronic blocking layer and the second P type GaN layer. The PInGaN potential well layer in the P type superlattice generates and constrains a great number of holes for the formation of a two-dimensional hole high-density state; the PAlGaN potential barrier layer hinders the escape of the holes; in such a way, the transverse spreading of the holes is improved, the electron overflow can be prevented, the hole injection efficiency is increased and the electron and hole recombination probability is improved; and therefore, the brightness of a chip can be improved by 5-10%.

The invention discloses an intelligent load balancing method based on a c/s (Client/Server) architecture. The method comprises the following steps that: (1) a communication connection is established between all task nodes and a load balancer by employing a c/s star structure, wherein the task nodes and the load balancer are initialized, and a long connection is maintained; (2) the task nodes periodically transmit node information to the load balancer; (3) the load balancer calculates a performance value of each task node according to the node information and determines distribution of the tasks according to the variation tendency of the performance value of each task node, if the performance of a certain task node is improved, tasks in a total task queue are distributed to the task nodes, and if the performance of a certain task node is reduced, the tasks in the total task queue are paused to be distributed to the task nodes; (4) the task nodes receive the distributed tasks and feed back a task execution log to the load balancer. According to the method, dynamic regulation of the tasks can be realized, and fine intelligent load balancing is achieved.

The invention discloses a distributed transaction processing system using a multi-type replica in a decentralized schema. The distributed transaction processing system comprises a transaction interface module, a transaction processing module and a transaction memory module, wherein the transaction interface module comprises an outward interface sub-module and a transaction preprocessing sub-module, the transaction processing module comprises a multi-type replica sub-module, a read transaction processing module, a replica group transaction state sub-module, a read request distribution sub-module, a replica repair sub-module, a multiversion concurrency control (MVCC) read sub-module, a local writing transaction processing sub-module, a local writing transaction paxos replica consistency sub-module, a local writing transaction commit sub-module, a global writing transaction processing sub-module, a main sub-transaction paxos replica consistency sub-module, a secondary sub-transaction paxos replica consistency sub-module and a global writing transaction commit sub-module. The distributed transaction processing system can solve the problems in an existing system that the reading and writing environment is limited, reading and writing availability can not be configured autonomously according to requirements of application, a global transaction depends on locking and cost is high.

The invention discloses a routing convergence method and system. The method includes the steps that a network server collects network topology information of a corresponding network; a path with the fewest path hops is searched for on the basis of the network topology information and serves as a shortest path between each source node and the corresponding destination node, the shortest paths between the source nodes and the corresponding destination nodes are converted into a full-path routing list according to link information of network nodes of the networks, and the full-path routing list is sent to the network nodes of the corresponding networks so that the network nodes can carry out routing convergence by inquiring the full-path routing list. According to the routing convergence method and system, when routing convergence is needed, the network nodes do not need to calculate the paths, concentrated routing planning is carried out on the basis of the full-path routing list, the network convergence speed and network maintenance efficiency can be improved, network control capacity can be improved and transverse extension of a network structure is facilitated.

The invention refers to a handshake method and a handshake system based on a datagram secure transmission protocol. The handshake method comprises: sending a client greeting message to the server by the client, wherein the client greeting message contains a list of all domestic commercial cipher suites supported by the client; receiving and determining whether the client greeting message carries astateless message authentication code by the server: if so, calculating to obtain a message authentication code by using a domestic hash algorithm, and comparing with the message authentication codecarried by the client greeting message to authenticate the client; sending a server greeting message to the client after the authentication, and informing the client of the domestic commercial ciphersuite selected by the client; and replacing the key specification according to the selected domestic commercial cipher suite by the client and the server, thereby establishing a data transmission link. The invention is capable of meeting the requirement of self-controllable information security in China and fully utilizing the unique advantages of the domestic encryption algorithm, and is compatible with the original DTLS protocol, and convenient for horizontal expansion.

The present invention provides a method for self-registration service discovery facing micro-service. The method comprises the following steps of: allowing all the nodes in a cluster to synchronouslyperceive newly published micro-service through a system mentioned above; allowing the service agent program of each node in the cluster to establish an IPTABLES forwarding rule to perform load balanceregulation of the micro-service; after the new service is published, allowing all the nodes in the cluster to perceive to set uniform access inlet for service, and on this basis, equally sharing a load balance task to each node of the cluster so as to effectively avoid that a load balance becomes performance bottlenecks on the basis of ensuring of the service rear-end example load balance. The present invention further provides a system for implementing the method.

The invention relates to the field of online software services and discloses an online upgrade method for a distributed deployment service software program. According to the online upgrade method, a solution capable of reducing the deployment complexity of a sever and the upgrade difficulty of a subsequent server side can be provided; on one hand, by employing a Docker application container technology and running each application sub-program of the service software program in a distributed manner, not only can the resource consumption rate be reduced, the horizontal expansion of a hardware system be facilitated and the deployment difficulty of the server be reduced, but also the stability of an online service system may further be improved and the all-weather continuous operation is implemented; on the other hand, by employing a Jenkins server and a program version management server, the automatic delivery and the gray level upgrade of an upgraded program code can be implemented, and the upgrade difficulty of the server side is greatly reduced; and in addition, by employing a polling mode to perform restart upgrade on each application sub-program, a service business can be guaranteed not to be interrupted in an upgrade process, thereby being convenient for actual application and promotion.

The invention discloses an LED epitaxial growth method. The LED epitaxial growth method comprises the following steps in sequence: processing a substrate, growing a low-temperature GaN nucleating layer, growing a high-temperature GaN buffer layer, growing a non-doped u-GaN layer, growing an Si-doped n-GaN layer, growing a luminous layer, growing an i-AlGaN layer and p-InGaN layer alternated growth structure, growing a high-temperature p-type GaN layer, growing a p-type GaN contact layer and cooling. Through the scheme, a traditional LED epitaxial electron blocking layer is designed into a low-voltage high-temperature i-AlGaN layer and high-voltage low-temperature p-InGaN layer alternated layer growth structure, an electron blocking effect is reached, and the increase of hole injection level is also facilitated, so that the luminous efficiency of an LED is improved.

The invention discloses an epitaxial growing method of an LED. The method comprises the steps of processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing an InAlGaN/SiAlN superlattice layer, growing a luminous layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with Mg and conducting cooling. According to the technical scheme, the InAlGaN/SiAlN superlattice layer is introduced after growing of the N-type GaN layer doped with Si and before growing of the luminous layer, and due to the introduction of the InAlGaN/SiAlN superlattice layer, the N-layer current distribution of the LED is improved, and the luminous intensity of the LED is improved.

Systems and methods for distracting an intervertebral disc space are provided. The systems use a staged, bilaterally expandable trial. The systems and methods of distracting an intervertebral space are provided in a manner that addresses the problem of subsidence. The method includes inserting the trial into the intervertebral space in a collapsed state and, once inserted, the trial is then used for distracting the intervertebral space using an expansion that includes a first stage and a second stage. The first stage includes expanding the trial laterally toward the peripheral zones of the top vertebral plate and the bottom vertebral plate, and the second stage includes expanding the trial vertically to distract the intervertebral space.

The invention discloses an intelligent two-end synchronous bending machine for pantograph carbon sliding plates. The two-end synchronous bending machine comprises a base and a bottom plate; the bottomplate is horizontally fixedly mounted on the top surface of the base; vertically-arranged stand columns are fixedly mounted in the middles of the two sides of the top surface of the bottom plate; a horizontally-arranged pushing plate is movably mounted inside a rectangular groove; vertically-arranged supporting rods are fixedly mounted on the four corners of the top surface of the pushing plate;a horizontally-arranged bearing plate is fixedly mounted at the top ends of the supporting rods; sliding blocks are movably mounted on the positions, on the two sides of the bearing plate, of the topsurface of the bottom plate; a connecting block is fixedly mounted in the middle of the outer side of the top surface of each sliding block; a clamping component is fixedly mounted at the top end of each connecting block; and an adjusting component is fixedly mounted in each adjusting groove. The two-end synchronous bending machine is easy to operate, the two ends of a carbon sliding plate bracketcan be bent synchronously and conveniently by the aid of an upper pressing plate and pressing rollers, the bending working efficiency for the bracket is improved, the labor amount of a worker is reduced, and the problem that the two ends of carbon sliding plate brackets cannot be bent synchronously and conveniently by existing bending devices is solved.

The present invention discloses a LED epitaxy superlattice growth method. The method comprises in order: processing a substrate, growing a low-temperature buffer layer GaN, growing an un-doping GaN layer, growing an N-type GaN layer doping Si, growing an InAlN/Mg2N3 superlattice layer, growing a luminescent layer, growing a P-type AlGaN layer, growing a P-type GaN layer doping Mg, and performing cooling. The InAlN/Mg2N3 superlattice layer is introduced after the growth of the N-type GaN layer doping Si and prior to the growth of the luminescent layer so as to extend the LED current, improve the LED luminous efficiency and allow the electrical parameters of the LED to be better.

The invention discloses an extension method, an application system and an application method of a message filter, and relates to the field of universal software. The method comprises the following steps that: the message filter receives a filtering rule sent from the outside and stores the filtering rule in a cache cluster; and the message filter is externally provided with a rule interface, receives an updating instruction sent from the outside through the rule interface, and dynamically updates the filtering rule stored in the cache cluster in real time according to the updating instruction.The extension method, the application system and the application method of the message filter have the beneficial effects that a user can dynamically update and set the filtering rule in the cache cluster in real time through the rule interface according to the service requirement, and custom expansion of the filtering rule is realized; and a large number of message subscription requests can be efficiently processed, a message filter is dynamically added and deleted, and the filtering function of the message filter is enhanced.

The invention relates to an LED extension structure with P type superlattice and a preparation method thereof. The LED extension structure orderly comprises the following parts from the lower side to the upper side: a substrate, a nucleating layer, a buffer layer, n type GaN layer, a multiple quantum well luminescent layer, a first P type GaN layer, P type AlInN/GaN superlattice and a second P type GaN layer; the P type AlInN/GaN superlattice is composed of the AlInN potential well layer and GaN barrier layer overlapped periodically. The AlInN/GaN superlattice structure is adopted for effectively raising the hole concentration, effectively resisting the electron and useful for expanding the hole, the mismatch of the structure lattice is little, the crystal quality is high after growing. The GaN-based LED with P type structure containing AlInN/GaN superlattice can effectively improve the luminous efficiency of the device.

The invention discloses a gallium nitride based light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The gallium nitride basedlight emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate; the N-type semiconductor layer is a Si-doped GaN layer; at least one composite layer is inserted into the N-type semiconductor layer, and the composite layer includes a first sub-layer, a second sub-layer and a third sub-layer which are sequentially stacked; the first sub-layer is a Mg-doped GaN layer, the second sub-layer isan undoped AlGaN layer, and the third sub-layer is a Ge-doped GaN layer. The gallium nitride based light emitting diode epitaxial wafer and the manufacturing method thereof can effectively promote thelateral expansion of electrons, make the electrons evenly distributed in the N-type semiconductor layer, and improve the antistatic capability of the LED.

The invention provides a fracturing production increasing method for deep shale gas, which divides a deep shale gas exploitation area into at least three fracturing units, wherein each fracturing unitcomprises five straight wells and two horizontal wells; the fracturing production increasing method for the deep shale gas comprises the following steps: fracturing the two fracturing units positioned on the two sides; S11, performing hydraulic fracturing operation on the straight wells to generate cracks with single shape in the same direction as the horizontal maximum principal stress; S12, performing pumping bridge plug fracturing operation in staggered sequence on horizontal wells to generate network fractures in a reservoir, and the fracturing fluid adopted by the pumping bridge plug fracturing operation is liquid nitrogen carrying proppant; S2, fracturing the horizontal wells of the middle fracturing unit and a straight well positioned between the horizontal wells to generate network cracks. According to the fracturing production increasing method, complex network fractures interwoven with artificial fractures and branch fractures can be generated, the volume and the seepage area of the reformed reservoir can be increased, and the purpose of improving the recovery ratio of the shale gas reservoir can be achieved.

The invention discloses a configurable rule processing method. The method includes: logging in a rule configuration page, and creating a score card for the client in the rule configuration page; executing a selection and configuration operation, and when the selection and configuration operation is completed, storing a rule corresponding to the score card into a database to generate a program language script; calling a rule engine to analyze the program language script, and outputting a score rating after the analysis is finished. The configurable rule processing method and the electronic device provided by the invention are suitable for loan product risk control business personnel to flexibly and quickly configure the business rules, and realize grading of clients.

The invention discloses a real-time recommendation method. The method comprises the steps of creating a model class through a predetermined programming language, offline training models on a specificcomputing engine by utilizing the model class, and mandating trained models to a real-time computing background; through the real-time computing background, storing user features in a high-speed cacheregion; mapping user identifiers to numbers in specified intervals, and allocating users in different number intervals to different models; and calling the different models to obtain the user features corresponding to the users in the different number intervals from the high-speed cache region, performing user behavior prediction according to the obtained user features, and recommending prediction results to the users in real time. An iterative model can be quickly updated, so that transverse expansion is facilitated.

The invention discloses an inverted light-emitting diode chip and a preparation method thereof. The inverted light-emitting diode chip comprises a substrate; an N-type semiconductor layer, positionedon the substrate; an active layer, positioned on the N-type semiconductor layer; a P-type semiconductor layer, positioned on the active layer; a current spreading layer, positioned on the P-type semiconductor layer; and a first insulating layer, a P electrode, and an N electrode, wherein the first insulating layer is partially located on the current spreading layer and partially penetrates throughthe current spreading layer, the P-type semiconductor layer and the active layer to be in contact with the N-type semiconductor layer. The first insulating layer is provided with a first through holeand a second through hole, the first through hole is located in the current expanding layer, the current expanding layer is connected with the P electrode through the first through hole, the second through hole is located in part of the first insulating layer, and the N-type semiconductor layer is connected with the N electrode through the second through hole. The invention aims to provide the inverted light-emitting diode chip with the array type electrode structure, so that the light-emitting area of the inverted light-emitting diode chip is increased, and the lighting effect of an invertedlight-emitting diode is effectively improved.