LED epitaxy superlattice growth method

A growth method and superlattice technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as uneven current distribution in the light-emitting layer, current crowding, higher resistance of the N layer, and uneven current distribution in the N layer. Achieve the effects of variable electrical parameters, good electrical parameters, and uniform current distribution

Active Publication Date: 2017-02-15
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] However, the current distribution of the N layer of the traditional sapphire LED epitaxial growth is uneven, resulting in current cr

Method used

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  • LED epitaxy superlattice growth method

Examples

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[0046] Example 1

[0047] See figure 1 The present invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high purity H 2 Or high purity N 2 Or high purity H 2 And high purity N 2 Mixed gas as carrier gas, high purity NH 3 As the N source, the metal organic source trimethyl gallium (TMGa) is used as the gallium source, trimethyl indium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethyl aluminum (TMAl) is used as the aluminum source, and the P-type dopant is magnesium cerocene (CP 2 Mg), the substrate is (001) sapphire, and the reaction pressure is between 70 mbar and 900 mbar. The specific growth mode is as follows:

[0048] An LED epitaxial superlattice growth method, which is characterized in that it sequentially includes: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a light-emitting layer, and growing P Type Al...

Example Embodiment

[0056] Example 2

[0057] The following provides an application example of the LED epitaxial superlattice growth method of the present invention, and its epitaxial structure is shown in figure 1 . Use MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high purity H 2 Or high purity N 2 Or high purity H 2 And high purity N 2 Mixed gas as carrier gas, high purity NH 3 As the N source, the metal organic source trimethyl gallium (TMGa) is used as the gallium source, trimethyl indium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethyl aluminum (TMAl) is used as the aluminum source, and the P-type dopant is magnesium cerocene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 70 mbar and 900 mbar. The specific growth mode is as follows:

[0058] Step 101: Process the substrate:

[0059] H at 1000℃-1100℃ 2 In the atmosphere, pass 100L / min-130L / min of H 2 , Keep the pressure of the reaction chamber 100mbar...

Example Embodiment

[0083] Example 3

[0084] The following provides a conventional LED epitaxial superlattice growth method as a comparative example of the present invention.

[0085] The conventional LED epitaxial growth method is (see epitaxial layer structure) figure 2 ):

[0086] 1. H at 1000℃-1100℃ 2 In the atmosphere, pass 100L / min-130L / min of H 2 , Keep the pressure of the reaction chamber 100mbar-300mbar, and process the sapphire substrate for 5min-10min.

[0087] 2.1. Reduce the temperature to 500°C-600°C, keep the reaction chamber pressure 300mbar-600mbar, and flow rate 10000sccm-20000sccm NH 3 (sccm is standard milliliters per minute), 50sccm-100sccm TMGa, 100L / min-130L / min H 2 , Grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate;

[0088] 2.2. Raise the temperature to 1000℃-1100℃, keep the pressure of the reaction chamber 300mbar-600mbar, and the flow rate of 30,000sccm-40000sccm NH 3 , 100L / min-130L / min H 2 , Keep the temperature stable for 300s-50...

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Abstract

The present invention discloses a LED epitaxy superlattice growth method. The method comprises in order: processing a substrate, growing a low-temperature buffer layer GaN, growing an un-doping GaN layer, growing an N-type GaN layer doping Si, growing an InAlN/Mg2N3 superlattice layer, growing a luminescent layer, growing a P-type AlGaN layer, growing a P-type GaN layer doping Mg, and performing cooling. The InAlN/Mg2N3 superlattice layer is introduced after the growth of the N-type GaN layer doping Si and prior to the growth of the luminescent layer so as to extend the LED current, improve the LED luminous efficiency and allow the electrical parameters of the LED to be better.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, in particular, to a LED epitaxial superlattice growth method. Background technique [0002] At present, LED (Light Emitting Diode, Light Emitting Diode) is a kind of solid-state lighting equipment. gradually expanding. The demand for LED brightness and luminous efficacy is increasing day by day in the market. How to grow better epitaxial wafers has been paid more and more attention. Because of the improvement of the quality of epitaxial layer crystals, the performance of LED devices can be improved. The electrostatic capacity and stability will increase with the improvement of the crystal quality of the epitaxial layer. [0003] However, the current distribution of the N layer of the traditional sapphire LED epitaxial growth is uneven, which leads to the current crowding and the high resistance of the N layer, resulting in the uneven current distribution of th...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/14H01L33/00
CPCH01L33/007H01L33/04H01L33/14H01L33/145
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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