Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

LED epitaxy superlattice growth method

A growth method and superlattice technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as uneven current distribution in the light-emitting layer, current crowding, higher resistance of the N layer, and uneven current distribution in the N layer. Achieve the effects of variable electrical parameters, good electrical parameters, and uniform current distribution

Active Publication Date: 2017-02-15
XIANGNENG HUALEI OPTOELECTRONICS
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current distribution of the N layer of the traditional sapphire LED epitaxial growth is uneven, resulting in current crowding and high resistance of the N layer, resulting in uneven current distribution of the light-emitting layer and low luminous efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxy superlattice growth method
  • LED epitaxy superlattice growth method
  • LED epitaxy superlattice growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] see figure 1 , the present invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0048] A LED epitaxial superlattice growth method, characterized in that, sequentially comprising: processing the substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a light-emitting layer, growing a P Type AlGaN layer, growth of...

Embodiment 2

[0057] The application examples of the LED epitaxial superlattice growth method of the present invention are provided below, and its epitaxial structure can be found in figure 1 . Using MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0058] Step 101, processing the substrate:

[0059] H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar...

Embodiment 3

[0084] A conventional LED epitaxial superlattice growth method is provided below as a comparative example of the present invention.

[0085] The growth method of conventional LED epitaxy is (see the epitaxial layer structure figure 2 ):

[0086] 1. H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 5min-10min.

[0087] 2.1. Lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed the flow rate at 10000sccm-20000sccm NH 3 (sccm is standard milliliter per minute), TMGa of 50sccm-100sccm, H of 100L / min-130L / min 2 , grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate;

[0088] 2.2. Raise the temperature to 1000°C-1100°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed the flow at 30000sccm-40000sccm NH 3 , 100L / min-130L / min H 2 , keep the temperature stabl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Light effectaaaaaaaaaa
Login to View More

Abstract

The present invention discloses a LED epitaxy superlattice growth method. The method comprises in order: processing a substrate, growing a low-temperature buffer layer GaN, growing an un-doping GaN layer, growing an N-type GaN layer doping Si, growing an InAlN / Mg2N3 superlattice layer, growing a luminescent layer, growing a P-type AlGaN layer, growing a P-type GaN layer doping Mg, and performing cooling. The InAlN / Mg2N3 superlattice layer is introduced after the growth of the N-type GaN layer doping Si and prior to the growth of the luminescent layer so as to extend the LED current, improve the LED luminous efficiency and allow the electrical parameters of the LED to be better.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, in particular, to a LED epitaxial superlattice growth method. Background technique [0002] At present, LED (Light Emitting Diode, Light Emitting Diode) is a kind of solid-state lighting equipment. gradually expanding. The demand for LED brightness and luminous efficacy is increasing day by day in the market. How to grow better epitaxial wafers has been paid more and more attention. Because of the improvement of the quality of epitaxial layer crystals, the performance of LED devices can be improved. The electrostatic capacity and stability will increase with the improvement of the crystal quality of the epitaxial layer. [0003] However, the current distribution of the N layer of the traditional sapphire LED epitaxial growth is uneven, which leads to the current crowding and the high resistance of the N layer, resulting in the uneven current distribution of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/04H01L33/14H01L33/00
CPCH01L33/007H01L33/04H01L33/14H01L33/145
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com