LED epitaxial layer growth method

A growth method and epitaxial layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of N-electrode, P-electrode asymmetry, uneven current dispersion of light-emitting layer, uneven light-emitting area, etc., to achieve the distribution of current The effect of uniformity, increased luminous efficiency, and strong trapping effect

Active Publication Date: 2017-02-15
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the traditional LED structure, the N electrode and the P electrode are asymmetrical, the current is directed from the P electrode to the N electrode, and the current selects the path with the lowest resistance value for conduction, causing the current to be crowded on the side close to the

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Examples

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Example Embodiment

[0046] Example 1

[0047] The present invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high purity H 2 Or high purity N 2 Or high purity H 2 And high purity N 2 Mixed gas as carrier gas, high purity NH 3 As the N source, the metal organic source trimethyl gallium (TMGa) is used as the gallium source, trimethyl indium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethyl aluminum (TMAl) is used as the aluminum source, and the P-type dopant is magnesium cerocene (CP 2 Mg), the substrate is (001) sapphire, and the reaction pressure is between 70 mbar and 900 mbar. The specific growth mode is as follows:

[0048] A kind of LED epitaxial layer growth method, see epitaxial structure figure 1 , Including: processing the substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a light-emitting layer, growing a P-type AlGaN layer, growing a Mg-d...

Example Embodiment

[0056] Example 2

[0057] The following provides an application example of the LED epitaxial layer growth method of the present invention, and the epitaxial structure is shown in figure 1 . Use MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high purity H 2 Or high purity N 2 Or high purity H 2 And high purity N 2 Mixed gas as carrier gas, high purity NH 3 As the N source, the metal organic source trimethyl gallium (TMGa) is used as the gallium source, trimethyl indium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethyl aluminum (TMAl) is used as the aluminum source, and the P-type dopant is magnesium cerocene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 70 mbar and 900 mbar. The specific growth mode is as follows:

[0058] Step 101: Process the substrate:

[0059] H at 1000℃-1100℃ 2 In the atmosphere, pass 100L / min-130L / min of H 2 , Keep the reaction chamber pressure 100mbar-300mbar, and ...

Example Embodiment

[0083] Example 3

[0084] The following provides a conventional LED epitaxial growth method as a comparative example of the present invention.

[0085] The conventional LED epitaxial growth method is (see epitaxial layer structure) figure 2 ):

[0086] 1. H at 1000℃-1100℃ 2 In the atmosphere, pass 100L / min-130L / min of H 2 , Keep the reaction chamber pressure 100mbar-300mbar, and process the sapphire substrate for 8min-10min.

[0087] 2. Reduce the temperature to 500°C-600°C, keep the reaction chamber pressure 300mbar-600mbar, and flow 10000sccm-20000sccm NH 3 , 50sccm-100sccm TMGa, 100L / min-130L / min H 2 , Growing a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate.

[0088] 3. Increase the temperature to 1000°C-1200°C, keep the reaction chamber pressure 300mbar-600mbar, and pass in NH with a flow rate of 30000sccm-40000sccm 3 , 200sccm-400sccm TMGa, 100L / min-130L / min H 2 , Continuous growth of 2μm-4μm undoped GaN layer.

[0089] 4. Keep the pressure...

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Abstract

The invention discloses an LED epitaxial layer growth method, which comprises the following steps in sequence: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a SiInN/InAlN superlattice current extension layer, growing a luminescent layer, growing a P-type AlGaN layer, growing a Mg-doped P-type GaN layer, and carrying out temperature reducing and cooling. The growth of the SiInN/InAlN superlattice current extension layer is introduced after the growth of the Si-doped N-type GaN layer and before the growth of the luminescent layer, so that current distribution of the luminescent layer is allowed to be relatively uniform, luminous efficiency is improved, current crowded situation is improved and voltage is reduced.

Description

technical field [0001] The present application relates to the technical field of LED design and application, and in particular, relates to a method for growing an LED epitaxial layer. Background technique [0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting equipment. It is recognized by consumers due to its small size, low power consumption, long service life, high brightness, environmental protection, and durability. The scale of domestic LED production It is also gradually expanding. The demand for LED brightness and luminous efficacy is increasing day by day in the market. How to grow better epitaxial wafers has been paid more and more attention. Because of the improvement of the quality of epitaxial layer crystals, the performance of LED devices can be improved. The electrostatic capacity and stability will increase with the improvement of the crystal quality of the epitaxial layer. [0003] In the traditional LED str...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/12H01L33/00
CPCH01L33/0075H01L33/04H01L33/12
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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