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A kind of led epitaxial layer growth method

A growth method and epitaxial layer technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of N electrode, P electrode asymmetry, uneven current dispersion of light-emitting layer, uneven light-emitting area, etc., to achieve current distribution The effects of uniformity, increased luminous efficiency, and strong trapping effect

Active Publication Date: 2019-04-30
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the traditional LED structure, the N electrode and the P electrode are asymmetrical, the current is directed from the P electrode to the N electrode, and the current selects the path with the lowest resistance value for conduction, causing the current to be crowded on the side close to the N electrode.
In the traditional LED structure, the current conduction in the epitaxial layer is uneven, which causes the internal current of the LED to be crowded, the current dispersion of the light-emitting layer is uneven, the light-emitting area is uneven, and the luminous efficiency is affected.

Method used

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  • A kind of led epitaxial layer growth method
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  • A kind of led epitaxial layer growth method

Examples

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Effect test

Embodiment 1

[0047] The invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0048] A kind of LED epitaxial layer growth method, epitaxial structure see figure 1 , including: processing the substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a light-emitting layer, growing a P-type AlGaN layer, and growing a Mg-doped P-type GaN layer ...

Embodiment 2

[0057] The application examples of the LED epitaxial layer growth method of the present invention are provided below, and its epitaxial structure can be found in figure 1 . Using MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0058] Step 101, processing the substrate:

[0059] H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mba...

Embodiment 3

[0084] A conventional LED epitaxial growth method is provided below as a comparative example of the present invention.

[0085] The growth method of conventional LED epitaxy is (see the epitaxial layer structure figure 2 ):

[0086] 1. H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 8min-10min.

[0087] 2. Lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed the flow rate at 10000sccm-20000sccm NH 3 , 50sccm-100sccm TMGa, 100L / min-130L / min H 2 , grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate.

[0088] 3. Raise the temperature to 1000°C-1200°C, keep the pressure in the reaction chamber at 300mbar-600mbar, and feed NH with a flow rate of 30000sccm-40000sccm 3 , 200sccm-400sccm TMGa, 100L / min-130L / min H 2 , Continuous growth of 2μm-4μm undoped GaN layer.

[...

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Abstract

The invention discloses an LED epitaxial layer growth method, which comprises the following steps in sequence: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a SiInN / InAlN superlattice current extension layer, growing a luminescent layer, growing a P-type AlGaN layer, growing a Mg-doped P-type GaN layer, and carrying out temperature reducing and cooling. The growth of the SiInN / InAlN superlattice current extension layer is introduced after the growth of the Si-doped N-type GaN layer and before the growth of the luminescent layer, so that current distribution of the luminescent layer is allowed to be relatively uniform, luminous efficiency is improved, current crowded situation is improved and voltage is reduced.

Description

technical field [0001] The present application relates to the technical field of LED design and application, and in particular, relates to a method for growing an LED epitaxial layer. Background technique [0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting equipment. It is recognized by consumers due to its small size, low power consumption, long service life, high brightness, environmental protection, and durability. The scale of domestic LED production It is also gradually expanding. The demand for LED brightness and luminous efficacy is increasing day by day in the market. How to grow better epitaxial wafers has been paid more and more attention. Because of the improvement of the quality of epitaxial layer crystals, the performance of LED devices can be improved. The electrostatic capacity and stability will increase with the improvement of the crystal quality of the epitaxial layer. [0003] In the traditional LED str...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04H01L33/12H01L33/00
CPCH01L33/0075H01L33/04H01L33/12
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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