783 results about "Sapphire substrate" patented technology

The invention provides a mechanical oscillator quantum device based on an acoustic cavity, a preparation method of the mechanical oscillator quantum device and a room temperature reading device. The device comprises: a thin film mechanical oscillator comprising: a silicon substrate comprising a silicon substrate body and an acoustic cavity, the silicon substrate body surrounding the acoustic cavity; the first thin film layer is arranged on the first surface of the silicon substrate body and covers the acoustic cavity; the second thin film layer is arranged on the second surface of the silicon substrate body and does not cover the acoustic cavity; the first metallization layer is arranged on the first thin film layer and comprises a central part arranged above the acoustic cavity, a body part arranged above the first surface of the silicon substrate body and a connecting part for connecting the central part and the body part; a bulk acoustic wave resonator includes: a sapphire substrate; the second metallization layer is arranged under the sapphire substrate; and the piezoelectric layer is arranged below the second metallization layer and is connected with the first metallization layer through an indium column. According to the invention, efficient reading of the acoustic mode of the thin-film mechanical oscillator is realized through dissipation coupling in a normal-temperature vacuum environment.

The invention relates to the technical field of machining, in particular to an intelligent control system and method for sapphire substrate polishing, and the method comprises the following steps: S1, surface topography data acquisition: collecting surface roughness data and a three-dimensional topography distribution diagram of a sapphire substrate in real time; s2, generating characteristic parameters: extracting the surface waviness, the local recess depth, the bulge density, the lattice distortion index and the residual stress distribution gradient as the characteristic parameters; s3, dynamic parameter adjustment: generating a dynamic adjustment instruction of the polishing pressure, the rotating speed of the polishing disk and the supply rate of the polishing solution; s4, distribution optimization of the polishing solution: realizing uniform coverage of the polishing solution on the surface of the substrate; s5, stress real-time monitoring: generating a stress abnormity early warning signal; s6, outputting a closed-loop control instruction: feeding back a stress abnormity early warning signal to the adaptive control model, and iteratively correcting the dynamic adjustment instruction; according to the method, the risks of stress concentration and fatigue damage can be reflected in real time, and the safety and high efficiency of the polishing process are ensured.

The invention discloses a sapphire substrate automatic defect detection and classification method based on visual inspection, and relates to the technical field of visual inspection and image processing, and the method comprises the steps: carrying out the adaptive threshold segmentation and phase consistency detection of a multi-modal image data set, and carrying out the fusion, and obtaining a joint defect probability graph; extracting defect candidate areas from the joint defect probability graph, and generating unified feature representation; inputting the unified feature representation into a double-branch neural network, performing fusion and classification through a cross attention mechanism, outputting a defect classification result, performing reconstruction by using a NeRF algorithm, outputting a defect three-dimensional shape, and generating a three-dimensional shape map; and generating a defect thermodynamic diagram based on the three-dimensional morphology map, performing space-time correlation analysis in combination with equipment process parameters, and outputting a sapphire substrate defect process analysis report. According to the method, the image contrast and the defect characterization capability are improved, so that the comprehensiveness and the sensitivity of detection are remarkably enhanced.

The invention relates to the technical field of on-line monitoring and control, in particular to a sapphire annealing furnace operation state monitoring and controlling method, which specifically comprises the following steps: performing feature matching processing on power supply ripple data to obtain a clock offset compensation value, and performing timestamp synchronization on the power supply ripple data and temperature controller data through the clock offset compensation value; calculating to obtain residual clock offset of the distributed temperature controller, establishing a first-round monitoring model, and performing first-round evaluation on the operation state of the annealing furnace; carrying out reconstruction treatment on the sapphire substrate contact stress field, and carrying out secondary evaluation on the operation state of the annealing furnace; and dynamically adjusting control parameters of the annealing furnace according to the first-round evaluation result and the second-round evaluation result. The problems of power supply fluctuation, clock drift and thermal stress monitoring failure caused by aging of the annealing furnace in the prior art are solved.

The invention provides a preparation method and system for improving the reliability of a gallium nitride transistor, and relates to the technical field of manufacturing, and the method comprises the steps: placing a pretreated sapphire substrate in metal organic chemical vapor deposition equipment, introducing trimethyl gallium and ammonia gas as precursors, and carrying out the epitaxial growth of gallium nitride; an alternating pulse supply technology is adopted, and trace iron doping is introduced in the epitaxial growth process so as to reduce the background carrier concentration in the gallium nitride layer; forming a source electrode structure, a drain electrode structure and a grid electrode structure on the gallium nitride epitaxial layer by adopting photoetching and plasma etching technologies; then, a layer of hafnium oxide with the thickness of 5-10 nanometers is deposited in the grid electrode area through the atomic layer deposition technology to serve as a grid dielectric layer; then a plasma enhanced chemical vapor deposition technology is adopted; and finally, the whole device is processed by using a laser annealing technology, and the annealing process is carried out in a nitrogen atmosphere so as to eliminate an interface state and reduce leakage current.

The invention relates to a non-contact MicroLED chip mass transfer method and system, and the method comprises the following steps: carrying out the spin coating of a layer of photolysis viscoelastic material on the surface of quartz glass, carrying out the curing, carrying out the spin coating of a layer of viscous flexible deformation material on the surface of the photolysis viscoelastic material, and carrying out the curing again, thereby completing the preparation of a first temporary substrate; scanning the sapphire substrate with the MicroLED chip through laser transfer equipment, decomposing gallium nitride to generate gas, and pushing the MicroLED chip to be transferred to the first temporary substrate; scanning the first temporary substrate through the laser transfer equipment again, and enabling the photolysis viscoelastic material to be photolyzed and gasified by the laser to push the flexible deformation material with viscosity to deform so as to transfer the MicroLED chip to the second temporary substrate; and carrying out hot pressing bonding on the MicroLED chip on the second temporary substrate to the thin film transistor substrate with the metal bumps through transfer bonding equipment.

The invention discloses a sapphire substrate through hole, a superconducting quantum chip manufacturing method and a superconducting quantum chip. The sapphire substrate through hole manufacturing method comprises the following steps: cleaning and drying a sapphire substrate; the cleaned and dried sapphire substrate is fixed to a three-dimensional positioning platform, and the three-dimensional positioning platform is used for moving the sapphire substrate according to a preset machining position so as to achieve relative machining Bessel beam nanoscale displacement; a femtosecond laser light source system emits a Bessel beam according to preset laser process parameters, the Bessel beam is focused to at least one position of a to-be-machined through hole of a sapphire substrate according to a preset laser scanning path, and through hole machining is conducted on the at least one position. According to the invention, the problem that the through hole is difficult to be formed in the sapphire substrate is solved, the high-quality requirement of the through hole in the sapphire substrate in the superconducting quantum chip is met, and a solution is provided for the realization of large-scale expansion of superconducting quantum bits in the future.

The invention relates to the technical field of semiconductors, in particular to a gallium oxide heteroepitaxial substrate and a preparation method thereof. The gallium oxide heteroepitaxial substrate comprises: a sapphire substrate; the sapphire substrate is provided with a beveled surface; a periodic pattern structure is arranged on the beveled surface of the sapphire substrate; the depth of a repetitive unit of the periodic pattern structure is 200 nm to 20 [mu] m, the maximum envelope size is 100 nm to 50 [mu] m, and the period interval is 200 nm to 100 [mu] m. The sapphire substrate is subjected to beveling processing and patterning processing, lattice mismatch is remarkably relieved, stress is released, accordingly, dislocation density is reduced, defects in the gallium oxide thin film are reduced, the gallium oxide single crystal thin film with better crystal quality is obtained, and the method has important application value in the field of gallium oxide thin film semiconductor material preparation.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to an alpha-phase gallium oxide thin film, an ultraviolet detector and a preparation method. The preparation method comprises the following steps: selecting a c-plane sapphire substrate, and placing the substrate in an MOCVD reaction chamber; the reaction chamber is alternately inflated and vacuumized, and the substrate tray is heated to 650-730 DEG C; introducing an oxygen source into the MOCVD reaction chamber, and supplying a reaction source to form alpha-Ga2O3 on the surface of the substrate; adjusting the flow of the carrier gas to 1000-2000 sccm, and continuously supplying an oxygen source and a reaction source to the MOCVD reaction chamber to realize epitaxial growth of the single crystal alpha-Ga2O3 film; and cooling to room temperature and taking out to finish the preparation of the alpha-phase gallium oxide film on the c-plane sapphire substrate. The method has the advantages that the alpha-phase gallium oxide film has high crystallinity and low surface roughness; the ultraviolet detector has the advantages of high responsivity and high response speed, and shows excellent ultraviolet detection performance.

The invention discloses a low-dislocation crack-free AlN (aluminum nitride) thin film, which comprises an AlN nucleating layer, an AlN thin film layer, an AlN thin film layer and an AlN thin film layer, the high-temperature AlN layer is grown on the AlN nucleating layer; the low-temperature AlN layer is grown on the high-temperature AlN layer; a high temperature medium V / III ratio AlN layer grown over the low temperature AlN layer; and a high temperature low V / III ratio AlN layer grown over the high temperature medium V / III ratio AlN layer. According to the AlN thin film, the high-temperature medium V / III ratio AlN layer is inserted between the low-temperature AlN and the high-temperature low V / III ratio AlN to serve as a stress regulation and dislocation filtering layer. The high-temperature medium V / III ratio AlN layer can effectively reduce the tensile stress generated by thermal mismatch between the high-temperature AlN layer and the low-temperature AlN layer, so that the risk of film cracking is reduced, dislocation can be further filtered, and the low-dislocation crack-free AlN film is obtained. Epitaxial growth of a low-dislocation AlN thin film is the key to preparation of high-efficiency deep ultraviolet electronic devices, such as light-emitting diodes (LEDs), semiconductor lasers and high-frequency power devices.

The invention relates to a micro LED transfer method and a naked eye 3D display panel, and relates to the technical field of semiconductor display. According to the transfer method of the micro LED, a first magnetic region is formed in a sapphire substrate of each micro LED unit, and a second magnetic region is formed at the bottom of each groove, so that the micro LED units can be adsorbed in a transfer substrate; the first electrode comprises a first metal layer, a second magnetic metal layer and a third metal layer, and a third magnetic metal layer is arranged below each pixel electrode, so that when the micro LED units on the transfer substrate are transferred to the driving substrate, the first electrode and the third magnetic metal layers have a magnetic attraction effect, and the micro LED units on the transfer substrate can be transferred to the driving substrate; therefore, the transfer accuracy of the micro LED unit is greatly improved, and the transfer yield of the micro LED unit is greatly improved.

The invention discloses an ultraviolet photocathode based on gallium oxide and a preparation method thereof. The ultraviolet photocathode is provided with an Ag reflecting layer, a substrate layer, a p-type gallium oxide layer and an activation layer from bottom to top in sequence; the Ag reflecting layer is used for reflecting unabsorbed light back to the p-type gallium oxide layer; the substrate layer is a c-plane sapphire substrate and is used for depositing a gallium oxide thin film; the p-type gallium oxide layer is a Cu-N co-doped gallium oxide film and is used as an emission layer of the photoelectric cathode; the activation layer is a Cs adsorption layer, is adsorbed on the upper surface of the p-type gallium oxide layer, and is used for reducing the electron affinity and improving the electron emission efficiency of the photoelectric cathode. Through Cu-N co-doping, the hole carrier concentration of the gallium oxide thin film is improved and reaches 6.2 * 10 < 15 >-1.1 * 10 < 18 > cm <-3 >, the hole Hall mobility is improved and reaches 12.5-41.7 cm < 2 > / Vs, and the quantum efficiency of a photoelectric cathode is improved and can reach 52% at most.

The invention discloses a method for depositing a gold electrode on the surface of a BSCCO single crystal, and belongs to the technical field of superconducting device preparation, and the method comprises the following steps: S1, cleaning a sapphire substrate; s2, placing the sapphire substrate in a vacuum pipeline, fixing the PDMS film adhered with the BSCCO single crystal on the sapphire substrate, and cleaving the BSCCO single crystal in the vacuum pipeline; s3, depositing a layer of gold film on the surface of the BSCCO single crystal fixed on the sapphire substrate by magnetron sputtering; s4, photoetching and transferring a gold electrode pattern on the surface of the BSCCO single crystal; s5, carrying out ion beam etching to remove the gold film outside the photoetching pattern; s6, evaporating a silicon oxide film as a protective layer; and S7, removing the photoresist by using an organic solvent. According to the method disclosed by the invention, the necessary steps of depositing the gold electrode on the BSCCO single crystal are completed in a vacuum environment, so that the influence of an organic reagent, water and air on the structure of the BSCCO single crystal is effectively reduced.

The invention discloses a deep ultraviolet LED epitaxial structure, a deep ultraviolet LED device comprising the same and a preparation method, and the epitaxial structure sequentially comprises a sapphire substrate, an AlN nanowire array layer, an AlN intrinsic layer and an AlGaN light-emitting structure layer from bottom to top. The AlGaN light-emitting structure layer further comprises an n-type AlGaN electron injection layer, a quantum well active layer, a p-type AlGaN electron blocking layer and other device structures. According to the invention, the vertically arranged AlN nanowire array is introduced to replace a traditional AlN buffer layer, so that lattice mismatching stress caused by a substrate is significantly released, and the dislocation density of an epitaxial layer is effectively reduced; meanwhile, the introduction of the AlN intrinsic layer further flattens the epitaxial interface and optimizes the lattice quality, thereby providing a high-quality template for the growth of a high-performance AlGaN material. The epitaxial structure is suitable for an LED device in a deep ultraviolet band, and the crystal quality, the electrical property and the luminous efficiency of the device can be improved.

The invention discloses a wafer-level single-layer MoS2 continuous film and an APCVD film forming method and application thereof.The wafer-level single-layer MoS2 continuous film is obtained by adopting a pipe-in-pipe APCVD tubular furnace, and conducting in-situ annealing on a C-A face sapphire substrate in the mixed atmosphere of oxygen and argon before the MoS2 continuous film grows; then the sulfur powder and the C-A surface sapphire substrate are heated at the same time in the mixed atmosphere of argon and hydrogen, the molybdenum trioxide powder is heated at the same time in the argon atmosphere, the wafer-level MoS2 continuous thin film of a single-layer structure is successfully prepared, and the technical problem that in the prior art, the wafer-level single-layer MoS2 thin film prepared through an APCVD method is discontinuous is solved. The wafer-level single-layer MoS2 continuous film prepared by the method has the characteristics of high quality and good uniformity, and is beneficial to large-scale integration and application of two-dimensional electronic devices.

The invention relates to the technical field of solar cell structures, in particular to a flexible multi-junction solar cell and a manufacturing method thereof. The flexible multi-junction solar cell comprises a PI film, a bonding metal layer, a back metal layer, an ohmic contact metal layer, a DBR reflecting layer, an epitaxial layer structure, an antireflection film and an N electrode. According to the flexible multi-junction solar cell, the GaAs substrate is firstly used, the sapphire substrate is used in the middle, the PI film is finally used as the final substrate, the mode of overturning the epitaxial wafer twice is adopted, the process is simple, and the problems that the consumption of precious metal is large due to multiple times of metal bonding, and the performance of the epitaxial wafer is affected due to high temperature of the evaporation and thermal stripping film process can be solved; germanium materials are saved, and cost is low; the PI film is used as the cell substrate, the weight is light, the mechanical strength is high, the cell substrate can be bent, and the design requirement of a solar cell array on a spacecraft can be met.

The invention discloses an elastic wave device, a filter or a multiplexer, and belongs to the technical field of elastic waves, the elastic wave device comprises a piezoelectric layer, a nitride, a sapphire substrate and a conductive material film pattern; in the third direction, the nitride is arranged on the sapphire substrate, the piezoelectric layer is arranged on the nitride, and the conductive material film pattern is arranged on the piezoelectric layer; the conductive material film pattern comprises interdigital transducer electrodes and reflector electrodes, and the reflector electrodes are located on the two sides of the interdigital transducer electrodes in the first direction. The elastic wave device is good in impedance characteristic and free of any obvious clutter response, can be widely applied to the application fields with high requirements such as communication, radars and wireless sensors, and meets the requirements of a modern communication system for high-frequency and high-performance filters and multiplexers.

The invention provides a preparation method and application of a single crystal copper foil current collector for a negative-electrode-free lithium ion battery, and aims to improve the cycling stability and electrochemical performance of the battery. The preparation method comprises the following steps: (1) carrying out ultrasonic cleaning on the commercial copper foil by using hydrochloric acid, absolute ethyl alcohol and deionized water in sequence to remove surface pollutants; (2) a phosphoric acid and absolute ethyl alcohol mixed electrolyte is used for electrochemical polishing, and the surface smoothness and uniformity are improved; (3) performing high-temperature heat treatment on the sapphire substrate in high-purity argon to induce abnormal growth of crystal grains; (4) annealing in a reducing atmosphere of 1000-1100 DEG C to enhance the crystal orientation and crystallinity of Cu (111); and (5) rapidly cooling to room temperature, stabilizing the structure and preventing oxidation. When the obtained single crystal copper foil is used for the negative-electrode-free lithium battery, the single crystal copper foil is used as a negative electrode current collector to electrochemically deposit lithium metal and then is reassembled into the negative-electrode-free battery. The current collector is high in conductivity and stable in structure, lithium deposition uniformity can be remarkably improved, dendritic crystal growth is inhibited, the cycle life is prolonged, and safety is improved.

The invention discloses adjustable machining grinding equipment, and relates to the technical field of machining. According to the equipment, a multi-dimensional adjusting mechanism is innovatively integrated, a sliding block is driven through a rotatable double-thread lead screw, stepless adjustment of the grinding radius is achieved, and the equipment is suitable for machining of the inner diameters of workpieces of different sizes; and in combination with a dynamic balance weight system, vibration in high-speed grinding is effectively inhibited, and the stability is improved. Meanwhile, a pneumatic-servo cooperative control system is adopted, stepless switching of the grinding pressure in the four stages of light pressure, medium pressure, heavy pressure and fine grinding is supported, the revolution-rotation speed ratio of the grinding disc to the workpiece is synchronously regulated and controlled, and the uniformity of the grinding track is optimized. In addition, the equipment is provided with a PLC program control module and a touch screen interface, 30 sets of technological parameters can be preset and stored, one-key calling is achieved, and the machining efficiency and consistency of complex parts are remarkably improved. According to the design, the adaptability of the equipment to sapphire substrates, gears and hard alloy special-shaped high-hardness workpieces is greatly expanded.

The invention belongs to the technical field of preparation of SERS (Surface Enhanced Raman Scattering) substrates, and particularly relates to a preparation method of an SERS substrate for multi-component residue detection, which comprises the following steps: selecting a patterned sapphire substrate with a micro-nano structure surface; designing a plurality of arrangement modes, and establishing a laminated body physical model in which longitudinal layers of the multi-element SERS effect material are deposited and distributed layer by layer; according to a physical vapor deposition method and a chemical vapor deposition method, obtaining a laminated body substrate with a multi-layer deposition structure; using a mechanical cutting method to obtain a flat surface with transverse distribution of the multi-element material; a mechanical scribing method is used for scribing the ordered array structure, and the processing step of the SERS substrate with the multi-element materials distributed in the transverse direction and the longitudinal direction is completed; and soaking the processed SERS substrate in the solution, drying, and evaluating the SERS activity through a Raman spectrum to complete the preparation. By constructing transverse and longitudinal distribution of multi-component materials on the surface of the SERS substrate, the detection sensitivity of multi-component residues can be improved.

The invention discloses a zinc gallate film prepared by a two-step method, and a preparation method and application thereof, and belongs to the technical field of semiconductor materials. The invention provides a method for preparing a zinc gallate film through a two-step method. The method comprises the following steps that a C-face sapphire substrate is pretreated, surface impurities and water are removed, and a pretreated sapphire substrate is obtained; mixing the gallium acetylacetonate solution and the zinc acetylacetonate solution, adding hydrochloric acid, stirring until the mixture is completely dissolved, and standing to obtain supernatant liquid; under the normal pressure condition, inert gas is used as current-carrying gas, the supernatant liquid is subjected to ultrasonic atomization treatment and then conveyed to the surface of the pretreated sapphire substrate, a nucleating layer is formed through deposition at the temperature of 500-550 DEG C, then the temperature is increased to 600-650 DEG C, an epitaxial film is formed through deposition, and the single crystal spinel zinc gallate thin film is obtained. The zinc gallate thin film with higher quality is prepared through a two-step method.

The invention discloses an acoustic wave filter based on an AlN / AlGaN superlattice structure and a preparation method of the acoustic wave filter, and relates to the technical field of filters, the acoustic wave filter comprises a superlattice main body, and is characterized in that the superlattice main body comprises a substrate and a piezoelectric superlattice layer located on one side of the substrate; wherein the substrate is a Si substrate, a sapphire substrate or a SiC substrate; the piezoelectric superlattice layer is a composite alternating layer of an AIN layer and an Al < x > Ga < 1-x > N layer, and x is a constant greater than 0. The invention has the effects of reducing strain, improving compatibility and reliability, being suitable for high-frequency operation and remarkably improving electromechanical coupling performance.

The invention discloses a single crystal boron nitride wafer batch preparation method based on a copper-nickel single crystal film and application, and belongs to the technical field of two-dimensional material preparation and nano electronic device manufacturing. The method comprises the following steps: forming a Cu80Ni20 (111) single crystal film on a c-plane sapphire substrate through magnetron sputtering and high-temperature annealing to serve as a growth substrate; carrying out thermal conversion treatment on the ammonia borane precursor to form a supply source system capable of stably releasing a borazine gas phase precursor; a porous structure quartz sleeve is adopted to regulate and control the release behavior of a precursor, and multi-wafer airflow homogenization control is realized in a CVD system through a quartz staggered wafer carrier; and carrying out epitaxial growth, and synchronously preparing more than 10 single crystal boron nitride wafers which are consistent in crystal orientation, smooth in surface and free of crystal boundaries in a single batch. According to the method, efficient, uniform and repeatable batch preparation of the high-quality monocrystal h-BN is realized, and the obtained wafer has atomic-scale flatness and excellent insulating property and is suitable for high-performance two-dimensional electronic devices, deep ultraviolet photoelectric devices and quantum device platforms.

The invention provides a method for growing a (310) oriented beta-Ga2O3 single crystal thick film on a sapphire substrate. The method comprises the following steps: cleaning the sapphire substrate and then carrying out annealing treatment; and with hydrogen chloride gas, gallium metal and oxygen as reaction sources, epitaxially growing a (310) oriented beta-Ga2O3 single crystal thick film on the treated sapphire substrate by using a hydride vapor phase epitaxy method. According to the method for growing the (310) oriented beta-Ga2O3 single crystal thick film on the sapphire substrate, the process is simple, operation is easy, controllability is high, the obtained (310) oriented beta-Ga2O3 single crystal thick film is smooth in surface, compact and uniform in thickness, the crystallinity of the single crystal film layer is high, and the growth requirement of a single crystal epitaxial film layer of tens of micrometers can be met; in addition, the method provided by the invention can realize large-batch and large-scale production of the (310) oriented beta-Ga2O3 single crystal thick film, and meets the device preparation requirements.

The invention discloses a preparation method of a high-quality beta-Ga2O3 film based on Van der Waals epitaxial growth. The preparation method of the high-quality beta-Ga2O3 thin film comprises the following steps: S1, placing a fluorine crystal mica F-micro substrate in MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and growing a gallium oxide low-temperature nucleating layer on the substrate at a first temperature by taking triethyl gallium as a gallium source and O2 as an oxygen source; s2, taking triethyl gallium as a gallium source and O2 as an oxygen source, and growing a gallium oxide high-temperature epitaxial layer on the gallium oxide low-temperature nucleating layer at a second temperature to obtain the high-quality beta-Ga2O3 thin film, the second temperature is higher than the first temperature. According to the beta-Ga2O3 thin film prepared by the method, the crystal quality is equivalent to that of a thin film obtained by a traditional rigid sapphire substrate, the problem that a high-quality gallium oxide thin film is difficult to prepare by an organic flexible substrate is solved, and the beta-Ga2O3 thin film is separated from the substrate and can be transferred to any target substrate; and the solar-blind ultraviolet photoelectric detector with high performance, flexibility and a vertical structure can be constructed.

The invention provides a preparation method of a high-quality gallium nitride film based on a porous silicon nitride insertion layer. The preparation method comprises the following steps: firstly, sequentially depositing a GaN low-temperature buffer layer and a u-GaN layer subjected to compression strain on a patterned sapphire substrate; a porous SiNx insertion layer is deposited on the u-GaN layer in situ, a nanoscale hole structure penetrating in the thickness direction is formed in the porous SiNx insertion layer, and the u-GaN layer is exposed at holes; then GaN nanorods vertically grow at the holes, finally, growth conditions are regulated and controlled to enable the GaN nanorods to transversely grow and combine to form a flat high-quality GaN thin film, and a gap is formed between the porous SiNx insertion layer and the GaN thin film. According to the method, the internal stress of the GaN film can be effectively reduced, the dislocation density is reduced, the film quality is improved, the process is simple, and the method is suitable for large-scale and low-cost industrial production of the GaN film.

The invention discloses a sapphire gallium nitride-based red light epitaxial wafer structure and a preparation method thereof, and belongs to the technical field of semiconductors, and the sapphire gallium nitride-based red light epitaxial wafer structure comprises a patterned sapphire substrate, a GaN substrate, n-type AlGaN, an InGaN quantum well, an AlGaN electron barrier layer, p-type GaN, ITO and a first electrode which are sequentially laminated; a second electrode is arranged on the n-type AlGaN; the InGaN quantum well, the AlGaN electron barrier layer, the p-type GaN and the ITO form a red light enhancement structure; a plurality of circular through holes determined based on a light scattering theory and a quantum confinement stark effect are formed in the vertical direction of the red light enhancement structure between the first electrode and the second electrode in a penetrating manner; under the condition that voltage is applied to the first electrode and the second electrode, generated electrons and holes are compounded in the InGaN quantum well to generate red light, and the quality of the red light epitaxial wafer is effectively improved.

The invention provides a high electron mobility transistor epitaxial structure and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a sapphire substrate; growing a boron-doped first buffer layer on the sapphire substrate: during growth, gradually reducing a boron component in a reaction material from a first preset value to 0 in a first preset duration, and continuously growing for a second preset duration after the boron component is reduced to 0, so that x in the first buffer layer is gradually reduced, and the boron component is gradually reduced to 0 from bottom to top; a boron-free GaN second buffer layer is grown on the first buffer layer, the growth rate of the second buffer layer is lower than that of the first buffer layer, and the thickness of the second buffer layer is larger than that of the first buffer layer; and sequentially growing a GaN high-resistance layer and a GaN epitaxial layer on the second buffer layer. Compared with the prior art, the defect density of the device can be effectively improved, electric leakage is reduced, and the stability and consistency of the device are improved.

The invention provides a method for preparing a beta-Ga2O3 heteroepitaxial thin film with high crystal quality on a sapphire substrate, which comprises the following steps of: selecting a sapphire single crystal wafer as a substrate, cleaning the sapphire single crystal wafer, and putting the cleaned sapphire single crystal wafer into metal organic chemical vapor deposition equipment; with trimethyl gallium or triethyl gallium as a gallium source and oxygen as an oxygen source, growing a beta-Ga2O3 thin layer with the thickness of less than 10 nm; hydrogen is introduced, and the defect bond of the beta-Ga2O3 thin film is etched; the temperature of the substrate is increased to 1000 DEG C or above, oxygen is introduced, annealing is carried out, the defects are further bridged, and oxygen vacancies are reduced; and reducing the temperature of the substrate to the growth temperature, repeating the steps 2-4, and gradually accumulating the thickness to reach an expected value. According to the method, layer-by-layer growth and in-situ defect repair are combined, and the ultra-wide forbidden band beta-Ga2O3 heteroepitaxial crystal film with extremely low defect density and ultra-high quality is successfully prepared.

The invention discloses a wafer-level single-layer MoS2 film and a preparation method thereof, and the method comprises the steps: taking sulfur powder and molybdenum trioxide powder as reaction precursors, and respectively placing the reaction precursors in two quartz boats; the quartz boat containing the sulfur powder, the quartz boat containing the molybdenum trioxide powder and the C-face sapphire substrate which is vertically placed in the air flow circulation direction are placed in a first temperature zone, a second temperature zone and a third temperature zone in the single-tube type CVD tube furnace respectively, wherein the first temperature zone, the second temperature zone and the third temperature zone are arranged in the single-tube type CVD tube furnace; the method comprises the following steps: cleaning a single-tube CVD tube furnace, introducing a carrier gas into the cleaned single-tube CVD tube furnace, respectively heating sulfur powder, molybdenum trioxide powder and a C-plane sapphire substrate when a preset pressure in the furnace is reached, and forming a wafer-level single-layer MoS2 film with good uniformity and relatively high quality, thereby solving the technical problems of low yield and poor uniformity of a two-dimensional MoS2 film obtained by existing mechanical stripping.