149 results about "Sapphire substrate" patented technology

The utility model discloses a patterned composite substrate and an LED chip. The patterned composite substrate comprises a patterned base layer and a composite layer arranged on the patterned base layer. The graphical base layer comprises a sapphire substrate and a plurality of sunken structures arranged on the surface of the sapphire substrate, and the sunken structures are in a non-penetrating state on the sapphire substrate; the composite layer comprises a first SiO2 layer and a second SiO2 layer, the first SiO2 layer and the second SiO2 layer are periodically and alternately arranged, the first SiO2 layer is arranged on the surface of the sapphire substrate, the concave structure is filled with the second SiO2 layer, and the first SiO2 layer is connected with the second SiO2 layer. By implementing the LED epitaxial wafer, the reflection of light can be increased, the luminous efficiency of the LED epitaxial wafer can be improved, the working temperature of the chip can be reduced, and the reliability and the stability of the device can be improved.

This application discloses a feedback control method for the material removal rate during sapphire substrate polishing, relating to the field of precision machining control technology. The method pre-establishes a tool head wear compensation model and a mapping model between the material removal rate and process parameters, generating a priority list of adjustment variables based on the sensitivity coefficients of each process parameter. During polishing, the measured material removal rate is obtained after detecting spacing changes using a non-contact displacement sensor array and compensating for tool head wear. The deviation between this rate and the target value is calculated cyclically according to the sampling period. Parameter adjustments are implemented using an incremental control law based on the priority list of adjustment variables. When the adjustment variable reaches its range boundary, the process automatically switches to the next level of process parameters. Simultaneously, the thickness of the removed material is accumulated, and polishing stops when the target value is reached. This application overcomes rate drift caused by polishing slurry degradation, tool head wear, and environmental disturbances, significantly improving the batch-to-batch thickness consistency and removal accuracy of sapphire substrates.

The application belongs to the technical field of semiconductor material science and technology, and particularly relates to a large-area hexagonal boron nitride heteroepitaxial film on a sapphire substrate and a preparation method thereof. The technical scheme provides a large-area hexagonal boron nitride epitaxial film directly grown on a sapphire substrate. The preparation method adopts an ion beam assisted sputtering method. In the growth process, the main and auxiliary ion sources give high-energy ion sputtering respectively, so that high-energy B / N atoms cross the energy barrier of the preferred orientation between the B / N atoms and the substrate surface, form covalent bonding with the substrate surface, induce the hexagonal grid plane of the hexagonal boron nitride to extend vertically to the substrate surface, and thus obtain a large-area vertically-oriented hexagonal boron nitride epitaxial film. Compared with the common Van der Waals epitaxial growth method, the epitaxial method can effectively release stress, so that the bonding force between the hexagonal boron nitride film and the substrate surface is stronger, and the stability is better, and the hexagonal boron nitride film is suitable for being used as a template, a transition layer, a heat dissipation layer and the like of optoelectronic devices and electronic devices.

The invention discloses a gallium oxide film double-array device group for flame detection and identification and a preparation method and application thereof, and belongs to the technical field of semiconductor photoelectric devices and flame monitoring. The device group comprises two arrays which are complementary in function and independent in structure: a Ga2O3 ultraviolet detector array which is grown based on a high-temperature annealing sapphire substrate and is consistent in orientation and is used for performing high-signal-to-noise-ratio rapid detection on flame solar-blind ultraviolet radiation; and the non-oriented Ga2O3 photoelectric synapse array is deposited on the unannealed substrate, and learning and classification identification of flame spatio-temporal characteristics are realized by utilizing plasticity caused by defect capture of the non-oriented Ga2O3 photoelectric synapse array. In the preparation process, the orientation-controlled Ga2O3 active layer and the non-orientation Ga2O3 active layer are respectively obtained by controlling whether the sapphire substrate is subjected to high-temperature annealing treatment or not. The two arrays can form a solution integrating detection and identification. The scheme is simple in structure, low in power consumption, easy to expand and suitable for industrial security and protection, combustion monitoring, forest fire early warning and other scenes.

The invention provides a red-light nitride epitaxial wafer, a preparation method thereof and a Micro-LED. The red-light nitride epitaxial wafer comprises a sapphire substrate, an insertion structure, an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer, the insertion structure penetrates through the n-type nitride pattern structure layer, the light-emitting layer and part of the p-type metal nitride layer and comprises a composite Si nano-column and a composite regulation and control layer, and the composite Si nano-column comprises a Si nano-column and a semi-ellipsoid structure; the composite regulation and control layer comprises a protection layer and a buffer layer, the protection layer is arranged on the outer wall of the Si nano-column, and the buffer layer is arranged on the area between the adjacent composite Si nano-columns; and an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer are laminated on the buffer layer between the adjacent composite Si nano columns. The In component merging and uniformity can be improved, the light-emitting efficiency and brightness of the Micro-LED are improved, the half-peak width of the light-emitting wavelength is reduced, and the color purity of display application is improved.

The application discloses a Micro-LED chip with a double-sided microstructure sapphire substrate and a preparation method and application thereof, and relates to the technical field of optoelectronic devices. The Micro-LED chip comprises a sapphire substrate and a flip GaN-based light-emitting unit arranged on one side of the sapphire substrate. The sapphire substrate has oppositely arranged first and second surfaces, the first surface faces the flip GaN-based light-emitting unit, and the second surface is a light-emitting upper surface. The first surface is formed with a microlens structure between the sapphire substrate and an n-type GaN layer, and the second surface is formed with a hexagonal pyramid microstructure array, which comprises a plurality of periodically arranged hexagonal pyramid structure units. The application can improve the surface light-emitting efficiency and the proportion of effective forward light emission while maintaining a high light extraction efficiency, and reduce the crosstalk influence of light emission in the sidewall direction on adjacent light-emitting pixels.

The invention relates to a monoclinic crystal (310) crystal face gallium oxide single crystal film and a preparation method thereof, a Ga2O3 single crystal film is an epitaxial single crystal film with a monoclinic structure, and the growth crystal face is Ga2O3 (310). The selected substrate is a sapphire substrate, a hexagonal gallium nitride substrate, a hexagonal silicon carbide substrate and the like which are high in heat conductivity and low in cost and are of a trigonal structure. The out-of-plane epitaxial relationship and the in-plane epitaxial relationship between the thin film and the substrate are AND respectively. The pulse laser deposition adopts a crystal solid-state laser, the laser wavelength is 266nm, and the growth temperature is lower than 600 DEG C. A transmission spectrum of the Ga2O3 single crystal film in a visible region shows that the transmittance in a range of 300-700nm is about 80%, the optical band gap of the film is about 4.6 eV, the surface square root roughness is less than 0.5 nm, and the Ga2O3 single crystal film is an excellent gallium oxide semiconductor candidate material crystal face.

This invention discloses a rare-earth ion co-doped two-dimensional semiconductor material with optimized ratio, its preparation method, and its application, belonging to the field of two-dimensional materials technology. The material is a transition metal chalcogenide WS2 doped with Er. 3+ and Yb 3+ By adjusting the mass ratio of ErCl3 to YbCl3 in the precursor, the Er:Yb doping molar ratio was optimized to 1:4 while maintaining a constant total doping concentration. This invention employs salt-assisted chemical vapor deposition to grow centimeter-scale, uniformly thick WS2 (Er-Yb) monolayer films on sapphire substrates, achieving an overall rare earth doping concentration as high as 10.7 at%. Experiments confirm that when the Er:Yb doping ratio is optimized to 1:4, the Yb... 3+ As a sensitizer, it can effectively absorb photon energy and efficiently transfer it to Er. 3+ The activator significantly enhances energy transfer efficiency and inhibits concentration quenching, enabling the material to exhibit the best photoelectric properties under 635nm illumination.

The invention relates to the technical field of photoelectron manufacturing, and particularly discloses a flip LED chip and a preparation method thereof. The flip LED chip comprises a sapphire substrate, and an epitaxial layer, a current blocking layer and a first reflecting layer which are arranged on the front surface of the sapphire substrate; a light-emitting structure is formed on the epitaxial layer; the orthographic projection of the light-emitting structure on the sapphire substrate is provided with a first outer edge and a secondary outer edge, the orthographic projection of the first reflecting layer on the sapphire substrate is provided with a second outer edge, the second outer edge is located on the outer side of the first outer edge, and the distance between the first outer edge and the second outer edge is larger than or equal to 3 micrometers; a reflection structure is arranged on the back surface of the sapphire substrate; the orthographic projection of the reflection structure on the sapphire substrate is provided with a third outer edge close to the light-emitting surface and a fourth outer edge far away from the light-emitting surface, and the secondary outer edge is located on the outer side of the third outer edge; the fourth outer edge is located on the outer side of the second outer edge, and the distance between the fourth outer edge and the second outer edge is larger than or equal to 2 micrometers. By implementing the invention, the light-emitting brightness can be improved.

The application discloses an AlGaN film with reduced dislocation density and a preparation method thereof, which comprises a sapphire substrate, an AlN nucleation layer, an AlN film layer, a dislocation filtering layer and an AlGaN film layer which are sequentially stacked, wherein the dislocation filtering layer is an AlGaN layer doped with Mg, and the AlGaN film has reduced dislocation density and improved crystal quality, which is beneficial to improving the light-emitting efficiency of a deep ultraviolet LED device.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

The invention relates to the technical field of semiconductor materials, in particular to a high-crystallinity and high-conductivity ZnGa2O4 epitaxial thin film and a preparation method thereof. Mixing the gallium acetylacetonate aqueous solution, the zinc acetylacetonate aqueous solution and the tetravalent tin salt aqueous solution to form a precursor solution; cleaning and nitrogen purging a sapphire substrate, fixing the sapphire substrate in a fog chemical vapor deposition equipment reactor, putting the precursor solution into an ultrasonic atomizer, starting the ultrasonic atomizer, and performing ultrasonic atomization growth to obtain a coarse ZnGa2O4 epitaxial film; and then performing in-situ annealing to obtain the ZnGa2O4 epitaxial thin film with high crystallinity and high conductivity. The crystallinity and conductivity of the ZnGa2O4 epitaxial thin film are synergistically improved through doping of a proper amount of tin and in-situ annealing.

The application provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure comprises a sapphire substrate, an AlN buffer layer located on one side of the sapphire substrate, a seed layer located on the side of the AlN buffer layer away from the sapphire substrate, wherein the seed layer comprises a plurality of spaced-apart base islands, a merging layer located on the side of the seed layer away from the sapphire substrate, a discontinuous SiN insertion layer located on the side of the merging layer away from the sapphire substrate, and a folding layer located on the side of the merging layer and the insertion layer away from the sapphire substrate. The materials of the seed layer, the merging layer and the folding layer are all GaN, and the sum of the thicknesses of the AlN buffer layer, the seed layer, the merging layer, the insertion layer and the folding layer is less than 1 um. The semiconductor structure and the manufacturing method thereof have the advantages of higher epitaxial crystal quality and prevention of the occurrence of epitaxial layer warping.

This invention relates to the field of semiconductor technology, specifically to a method for preparing a single-domain κ-Ga2O3 epitaxial thin film, comprising the following steps: a sapphire substrate is obliquely cut off the m-axis from the C-plane at an angle of 6°~10° to form a stepped substrate; the obliquely cut sapphire substrate is etched using wet etching; after cleaning and nitrogen purging, it is annealed in an oxygen atmosphere to obtain a pretreated sapphire substrate; a coarse single-domain κ-Ga2O3 epitaxial thin film is deposited on the pretreated sapphire substrate using Mist-CVD technology, followed by in-situ annealing in an oxygen atmosphere to obtain the single-domain κ-Ga2O3 epitaxial thin film. In this invention, by limiting the oblique cutting direction and angle on the sapphire substrate surface, κ-Ga2O3 is guided to nucleate in a specific in-plane orientation, fundamentally suppressing the multi-orientation nucleation problem caused by substrate surface symmetry.

The invention relates to the technical field of display screen preparation, in particular to a high-yield thermal compression welding method based on a direct laser mass transfer process, which comprises the following steps: pasting a resin bearing adhesive film on a TFT (Thin Film Transistor) back plate, presetting a metal welding spot on a Micro-LED (Light Emitting Diode) chip, transferring the Micro-LED chip from a sapphire substrate to the resin bearing adhesive film of the TFT back plate by using the laser mass transfer process, iCP etching is carried out, a flexible lamination is arranged on one side of the sapphire pressing sheet and is aligned with the Micro-LED chip, and a graphite sheet is arranged on one side, far away from the Micro-LED chip, of the TFT backboard; and after welding is finished, cooling is conducted to the room temperature, soaking is conducted, and the Micro-LED display screen is obtained. By the adoption of the steps, the problems that in the prior art, a Micro-LED chip deviates, residues are left after welding, and welding fails due to warping of a back plate are solved, and therefore the high-yield Micro-LED display screen is obtained.

The application discloses a method for automatic defect detection and classification of sapphire substrates based on visual detection, relates to the technical field of visual detection and image processing, and comprises the following steps: performing adaptive threshold segmentation and phase consistency detection on a multi-modal image dataset, fusing the adaptive threshold segmentation and the phase consistency detection, and obtaining a joint defect probability graph; extracting a defect candidate region from the joint defect probability graph and generating a unified feature representation; inputting the unified feature representation into a double-branch neural network, fusing and classifying the unified feature representation through a cross-attention mechanism, outputting a defect classification result, reconstructing the defect classification result by using a NeRF algorithm, outputting a three-dimensional morphology of the defect, and generating a three-dimensional morphology atlas; generating a defect heat map based on the three-dimensional morphology atlas, performing space-time correlation analysis in combination with equipment process parameters, and outputting a sapphire substrate defect process analysis report. The application improves image contrast and defect characterization capability, thereby significantly enhancing the comprehensiveness and sensitivity of detection.

The utility model provides an LED filament lamp and a display device, the LED filament lamp comprises a sapphire substrate, a plurality of LED chips and a transparent protective cover, the plurality of LED chips are uniformly distributed on the sapphire substrate in a matrix form, the connection directions of the adjacent LED chips are opposite, the sapphire substrate and the plurality of LED chips are combined to form an LED filament, and the transparent protective cover is arranged on the sapphire substrate. A plurality of side walls of the sapphire substrate are covered with silica gel layers, and the silica gel layers wrap the LED chips; the interior of the transparent protection cover is hollow to form a containing space, the LED lamp filament is located in the containing space, a plurality of heat dissipation holes are formed in the transparent protection cover, and the heat dissipation holes communicate with the containing space. And meanwhile, the problem that when the LED filament lamp is used for a long time in a severe environment, the light attenuation of the LED filament lamp is large is solved.

The present application relates to a kind of micro-electro-mechanical system-based sapphire-based gas sensor and its manufacturing method, wherein the gas sensor includes the following parts in stacked arrangement: substrate with heat insulation cavity; Support layer is arranged on substrate, and has heat accumulation area suspended above heat insulation cavity; Heating assembly is arranged on support layer, with heating wire; Dielectric layer is arranged on heating assembly, and has heat accumulation area suspended above heat insulation cavity; Detection electrode is arranged on dielectric layer; Sensing layer is arranged on detection electrode, and gas-sensitive material is deposited;Wherein, the heat accumulation area of at least one of support layer and dielectric layer has several through holes along the stacking direction, and the aperture of through hole in the layer of support layer and dielectric layer is gradually changed in the way of extending direction from heat accumulation area to periphery.

The invention relates to the technical field of LED epitaxial wafers, in particular to an LED epitaxial wafer, a preparation method of the LED epitaxial wafer and an LED chip, and the method comprises the following steps: firstly, carrying out cleaning and hydrofluoric acid etching treatment on a sapphire substrate, and growing a Sn-doped Li5GaO8 buffer layer through pulse laser deposition; then growing an n-type GaN layer through a chemical vapor deposition method, preparing a ZnGa2O4 seed layer through pulsed laser deposition, forming an InGaN quantum dot array through strain induced phase separation, then constructing a gradient In component quantum well, depositing a BaTiO3 ferroelectric layer through magnetron sputtering, and neutralizing a built-in electric field through electron beam polarization; and finally, growing a gradient doped p-type GaN layer by adopting a circulating annealing process, and assembling a KZnPO4 nanosheet ordered array on the surface of the gradient doped p-type GaN layer by adopting a vertical pulling technology. Therefore, the problems of poor heat dissipation, low luminous efficiency, high efficiency attenuation, short service life and the like of the LED epitaxial wafer are solved.

The application relates to the technical field of optoelectronic manufacturing, and particularly discloses a flip LED chip and a preparation method thereof. The flip LED chip comprises a sapphire substrate, an epitaxial layer, a current blocking layer and a first reflection layer arranged on the front surface of the sapphire substrate; the epitaxial layer is provided with a light-emitting structure; the orthographic projection of the light-emitting structure on the sapphire substrate has a first outer edge and a secondary outer edge; the orthographic projection of the first reflection layer on the sapphire substrate has a second outer edge, the second outer edge is located outside the first outer edge, and the distance between the first outer edge and the second outer edge is greater than or equal to 3 micrometers; the back surface of the sapphire substrate is provided with a reflection structure; the orthographic projection of the reflection structure on the sapphire substrate has a third outer edge close to a light-emitting surface and a fourth outer edge away from the light-emitting surface, the secondary outer edge is located outside the third outer edge, the fourth outer edge is located outside the second outer edge, and the distance between the fourth outer edge and the second outer edge is greater than or equal to 2 micrometers. The application can improve the light-emitting brightness.

The utility model provides a kind of anti-interference sapphire base gallium nitride power device, including sapphire substrate layer, GaN epitaxial layer and electrode;The back surface of the sapphire substrate layer is equipped with periodic array's recess, the recess is filled with high heat-conducting insulating material, the depth of the recess is 5-20 μm, shape is one of rectangle, circle or hexagon.The utility model is equipped with sapphire substrate layer, GaN epitaxial layer and electrode, can significantly improve the heat dissipation performance of device, the periodic array recess of back surface setting of sapphire substrate layer and the high heat-conducting insulating material filled in recess, effectively increase the heat conduction path, improve the heat dissipation efficiency, the depth of recess is controlled in 5-20 μm range, shape selects one of rectangle, circle or hexagon, both ensure the stability of structure, and optimize heat conduction effect, so that the whole structure is in good electrical performance while, with excellent heat dissipation capacity, prolongs the service life of device.

The utility model provides a lamp filament used for automobile illumination and an LED lamp comprising the same, and the lamp filament used for automobile illumination comprises a sapphire substrate and a plurality of chip assemblies which are sequentially arranged at the bottom of the sapphire substrate along the width direction of the sapphire substrate at intervals. The chip assembly comprises a first arrangement group arranged in the length direction of the sapphire substrate and a second arrangement group arranged corresponding to the first arrangement group, the first arrangement group comprises a plurality of LED chips arranged in series in the first direction, and the second arrangement group comprises a plurality of LED chips arranged in series in the second direction. The pin assembly comprises connecting pins and bending pins, wherein the connecting pins are connected to the two ends of the sapphire substrate in the length direction respectively, the bending pins are connected to the ends, away from the sapphire substrate, of the connecting pins, and the bending pins and the connecting pins are arranged in an angle mode.

The invention provides a preparation method of a composite patterned substrate, the composite patterned substrate and an LED chip, and the method comprises the steps: forming a plurality of holes in the surface of a sapphire substrate, and carrying out the gluing, exposure and development processing, and obtaining a preset pattern; depositing a SiOF layer on the substrate; removing the preset pattern below the SiOF layer through heat treatment to form a cavity; transferring a pattern on the substrate through a nanoimprint technology; and performing inductively coupled plasma etching to form a composite pattern structure. A cavity structure is formed in a sapphire substrate through laser drilling and heat treatment, the light extraction efficiency of an LED is improved by combining with a composite pattern constructed by a nanoimprint technology and utilizing a multi-interface light scattering effect, the propagation direction of light rays can be guided by combining a patterned structure with a cavity, light emitting angle distribution is optimized, and light emitting is more uniform or the directivity is more concentrated; epitaxial growth stress is released through the cavity, dislocation density is reduced, epitaxial layer cracks are effectively inhibited, and crystal integrity is improved.

The application relates to the field of chemical engineering substrate processing technology, and discloses a surface impurity polishing method for sapphire substrates, which comprises the following steps in sequence: pretreatment, polishing liquid preparation, first-stage polishing, second-stage polishing and post-treatment. In the method, the surface is activated through ultraviolet ozone cleaning with specific parameters in the pretreatment; the polishing liquid is composed of an acidic complexing agent, an oxidizing etching agent, a surfactant and nanoscale composite abrasives with specific particle sizes and proportions; the polishing process is divided into two stages, the first-stage polishing is preliminarily processed under specific pressure and rotating speed by using a polyurethane polishing pad, the second-stage polishing is finely polished by using a porous composite fiber polishing pad and adopting a periodic variable rotating speed process; and the post-treatment comprises multistage ultrasonic cleaning and drying. The application improves the uniformity of the surface quality of the sapphire substrates, and improves the adaptability of the polishing process to substrates with different batches and different initial conditions and the robustness of the processing effect.

The application provides a composite patterned substrate and a preparation method and application thereof, and the substrate comprises a sapphire substrate layer and a pattern structure layer arranged on the sapphire substrate layer, wherein the pattern structure layer comprises a plurality of periodic convex structures, and each convex structure comprises, from bottom to top, a sapphire root, a Pt metal film interlayer and a hetero-material pattern. The application effectively improves the light-emitting efficiency of a GaN-LED by sandwiching the Pt metal film between the sapphire substrate layer and the hetero-material pattern. Meanwhile, the design ingeniously solves the problem of the influence of the metal reflection layer on the growth of a GaN single crystal, and realizes the epitaxial preparation of a high-efficiency LED device. In addition, the preparation method is simple and low in cost, and has a good industrialization prospect.

The application discloses a flexible boron nitride homojunction pn and a preparation method, wherein a sulfur-doped n-type boron nitride film is grown on a sapphire substrate through a low-pressure chemical vapor deposition technology; a magnesium-doped p-type boron nitride film is grown on a copper substrate through a low-pressure chemical vapor deposition technology; the sulfur-doped n-type boron nitride film and the magnesium-doped p-type boron nitride film are transferred to a flexible substrate through a polymethyl methacrylate assisted liquid phase exfoliation technology, and heat treatment is conducted in an argon atmosphere to obtain a flexible boron nitride homojunction pn. The application realizes efficient n-type and p-type doping of the boron nitride film, and prepares a boron nitride-based homojunction pn on the flexible substrate through a large-area film exfoliation and transfer technology. The homojunction structure has high lattice matching degree and low junction formation energy, further develops the preparation and research of van der Waals homojunctions in the field of ultrawide bandgap materials, and has great application prospect in the fields of optoelectronic devices and high-power power electronic devices.

The invention discloses a high-adhesion anode fluorescent screen and a manufacturing method thereof, and relates to the technical field of low-light-level image intensifier core component manufacturing, the high-adhesion anode fluorescent screen comprises a fluorescent screen, the fluorescent screen is made of glass or a sapphire substrate, the fluorescent screen is provided with a micropore array structure, the micropore array structure comprises a plurality of micropores arranged in an array, the aperture of each micropore is 5-10 [mu] m, and the diameter of each micropore is 5-10 [mu] m. The hole depth is 3-5 microns, the hole pitch is 1-2 microns, fluorescent powder is filled in each micropore, and the fluorescent powder is made of P43 or P45 fluorescent powder. According to the invention, the micropore array can form an anchoring structure, the fluorescent powder slurry is coated, the holes are filled with the particles and the binder, and the fluorescent powder layer and the substrate are locked; the stripping tendency of the fluorescent powder layer caused by thermal expansion and cold contraction, vibration or external stress is resisted through geometric constraint, and interaction force is generated with internal stress of the fluorescent powder layer, so that adhesion is enhanced; a narrow-band efficient fluorescent material is selected to cooperate with the micropore light regulation effect, the efficient light-emitting characteristic of the fluorescent powder is enhanced, a mature manufacturing process combination is combined, and breakthrough improvement of the performance of the fluorescent screen is achieved.

The invention relates to the field of semiconductor materials, in particular to a preparation method of a magnetron sputtering gallium oxide thin film, and provides the following scheme aiming at the problems that a gallium oxide thin film preparation method in the prior art is low in crystallinity, the responsivity and the response speed of a detector are mutually restricted and the dark current is large, the preparation method comprises the following steps: S1, preparing a target material; s2, substrate treatment: ultrasonically cleaning a sapphire substrate, blow-drying the sapphire substrate, and putting the sapphire substrate into a deposition cavity of a magnetron sputtering system; s3, magnetron sputtering is carried out; s4, thin film deposition; s5, annealing treatment; s6, preparing an electrode; s7, coating a film; s8, photoelectric testing; when the target material is prepared, Ga2O3 powder is subjected to wet grinding, first-time sintering, dry grinding, compression molding and second-time sintering, and the Ga2O3 ceramic target material is obtained. Grain orientation preferred growth of the gallium oxide thin film is achieved, the crystallinity is greatly improved, the defect density of the thin film is remarkably reduced, the method is more suitable for solar-blind ultraviolet detection, and compared with thin film preparation technologies such as MOCVD and MBE, the equipment cost is low, and large-scale production is easy.

To provide a semiconductor device manufacturing method that can reduce the degradation of semiconductor device quality. [Solution] The laser irradiation process includes a first irradiation step of forming a plurality of modified portions in a sapphire substrate along a first direction. The first irradiation step includes a first step of forming a plurality of first modified portions along a first direction, and a second step of forming a plurality of second modified portions along a first direction after the first step, at a position closer to the second surface of the sapphire substrate than the first modified portions, and at a position that overlaps the first modified portions in a plan view. The amount of aberration correction of the laser light in the first step is smaller than the amount of aberration correction of the laser light in the second step, and the pulse energy of the laser light in the first step is smaller than the pulse energy of the laser light in the second step.

The invention relates to a method for manufacturing a light-emitting diode comprising: having a sapphire substrate; depositing an epitaxial intermediate layer on the substrate made of transition metal nitride selected from: TiN, ZrN, HfN, NbN, TaN, VN, MoN, WN, CrN; depositing a buffer layer on the intermediate layer so as to obtain an epitaxial layer, the buffer layer being made of AlxGa1-xN with 0