121 results about "Thermal dissipation" patented technology

The invention relates to a method for determining a total fluid volume flow (1) in the region of an implanted vascular support system (2), comprising the following steps: a) determining a reference temperature (3) of the fluid, b) determining a motor temperature (4) of an electric motor (5) of the support system (2), c) determining the thermal dissipation loss (6) of the electric motor (5), d) ascertaining the total fluid volume flow (1) using the reference temperature (3), the motor temperature (4), and the thermal dissipation loss (6) of the electric motor (5).

The invention discloses an online defect detection method for a main-grid-free photovoltaic cell panel, which comprises the following steps of: obtaining a life distribution diagram of a main-grid-free photovoltaic cell through time-resolved photoluminescence, and obtaining a heat dissipation diagram of the main-grid-free photovoltaic cell through optically-induced phase-locked thermal imaging; an ultrasonic diagram of the main-grid-free photovoltaic cell is obtained through laser ultrasound; preprocessing and registering the life distribution diagram, the heat dissipation diagram and the ultrasonic diagram so as to uniformly map the life distribution diagram, the heat dissipation diagram and the ultrasonic diagram to a cell coordinate system, extracting minority carrier life, heat dissipation power, ultrasonic propagation time delay offset and scattering energy, and forming a multi-modal feature together with a thermal phase; and based on the abnormal score, performing defect detection and classification on the multi-modal features of the possible defect area to obtain classification results of electrical defects, thermal defects and mechanical defects. The invention also discloses a system for realizing the method. According to the invention, full-coverage detection of electrical, thermal and mechanical defects is realized.

An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive connector and a die that has an active side and a non-active side. The active side of the die is connected to the electrically conductive connector via interconnects. A molding compound encapsulates the die and portions of the electrically conductive connector. A thermally conductive contact extends from a thermal hotspot on the die to an entry surface of the molding compound.

The present application relates to high speed, high efficiency SiC power modules. A power converter module includes an active metal brazing (AMB) substrate, a power converter circuit, and an enclosure. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuit includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The enclosure is disposed over the power converter circuit and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, thermal dissipation of the power converter module can be significantly improved while maintaining structural integrity of the power converter module.

A structure is provided that includes a thermal dissipation measurement sensor located on the frontside or the backside of a semiconductor device. The thermal dissipation measurement sensor includes a first probe region and a second probe region that are interconnected by a plurality of metal lines that are arranged in a serpentine pattern and having at least one non-powered metal line located between, and spaced apart from, each of the metal lines.

Assemblies, systems, and methods are provided for dissipating heat from a receptacle assembly for holding a transceiver and attaching to a PCB. The receptacle assembly has a body defining a first end, a second end, a top surface extending between the first end and the second end, and a bottom surface extending between the first end and the second end opposite the top surface. A thermal dissipation device is disposed on the bottom surface, and the thermal dissipation device is configured to dissipate heat from the receptacle assembly to an external environment via the bottom surface. The thermal dissipation device may include at least one conductive element and at least one dissipation element and may interact with other cooling features of the PCB.

A method for manufacturing an integrated circuit includes forming an active area in a substrate, forming a gate structure on the active area, depositing an insulating layer, etching electrical contact openings to the gate structure and the active area, depositing a first conductive composition in the electrical contact openings to form an electrical contact layer that partially fills the electrical contact openings, filling a remainder of the electrical contact openings to form a plurality of electrical contacts. The method includes etching thermal contact openings to the active area, depositing a second conductive composition in the thermal contact openings to form a thermal contact layer that partially fills the thermal contact openings, wherein the first conductive composition differs from the second conductive composition, filling a remainder of the thermal contact openings to form a plurality of thermal contacts, and thermally connecting the plurality of thermal contacts and a heat dissipation structure.

The invention discloses a structured cable with self-cooling and state self-sensing functions, and belongs to the technical field of wires and cables. The cable comprises a conductor, an insulating layer, a functional layer, a sensing layer and an outer sheath from inside to outside. The functional layer is made of an elastic porous material, a spiral cavity is embedded in the functional layer to form a passive heat dissipation channel, and efficient heat dissipation is achieved through the chimney effect. The sensing layer is formed by compounding a transparent polymer base material and thermochromic microcapsules, and when the local temperature of the cable exceeds a safety threshold value, the color changes, so that visual positioning of an overheat fault point is realized. The heat dissipation and state sensing functions are deeply integrated in the cable body structure, external equipment and energy are not needed, the cable has the advantages of being simple in structure, low in cost, safe, reliable and the like, and the problems that a traditional cable depends on an external heat dissipation and monitoring system, so that the structure is complex, cost is high, and operation and maintenance are inconvenient are effectively solved.

Aspects disclosed include an integrated circuit (IC) package including two substrates and vertical interconnects coupling the two substrates, the vertical interconnects comprising a metal ball and metal pin combination to address an increased distance between substrates. The vertical interconnects are disposed in a mold layer between the two substrates. The mold layer also includes a die, a plurality of metal pins, and a plurality of metal balls coupled to the plurality of metal pins to form the vertical interconnects. Larger distances between the two substrates are desirable when a die's thickness is increased to increase thermal dissipation from the die. As an example, by utilizing a plurality of metal ball and pin combinations as vertical interconnects, larger distances between the two substrates may be advantageously achieved with reduced risk of electrical shorting between vertical interconnects and without compromising pitch between vertical interconnects.

A thermal dissipation device for a handheld electronic device is provided. The thermal dissipation device includes a thermoelectric cooling chip, a temperature sensor, a humidity sensor, and a processing unit. The thermoelectric cooling chip has a cold surface and a hot surface. The cold surface is attached on a heating surface of the handheld electronic device by means of a heat conduction structure, and has a cold surface temperature. The temperature sensor and the humidity sensor are disposed in an area adjacent to the thermoelectric cooling chip for generating an environmental temperature and an environmental humidity respectively. The processing unit is configured to calculate a dew point temperature based on the environmental temperature and the environmental humidity; and determine whether to stop the thermoelectric cooling chip or not based on the cold surface temperature, the dew point temperature, and a heating surface temperature of the handheld electronic device.

The invention relates to an electrosurgical instrument (10) for the thermal cutting of biological tissue, in particular of a patient. The instrument (10) comprises two jaws (15, 16), wherein at least one of the jaws (15) is configured to be moved towards and away from the other jaw (16). At least one of the jaws (15) comprises a thermal cutting element (22) having an electrically conductive cutting conductor (36) and an electrically conductive return conductor (37) which are electrically connected to each other. The cutting element (22) is arranged such that the cutting conductor (36) is thermally exposed at least on the side of the one jaw (15) facing the other jaw (16), and such that the return conductor (37) is surrounded by an insulation (34). The return conductor (37) comprises a lower electrical resistance than the cutting conductor (36) in the direction of the current flow, and preferably a higher thermal conductivity than the cutting conductor. In doing so, during the supply of electrical current to the cutting element (22), less heat and temperature are generated at the return conductor (37) than in the cutting conductor (36), and the return conductor (37) can be used for thermal dissipation.

A semiconductor package includes a first die, at least one second die and a thermal dissipation structure. The first die has a first bonding layer. The second die has a second bonding layer, wherein the second die is disposed on the first die, and the second bonding layer is bonded to the first bonding layer. The thermal dissipation structure is disposed on a backside surface of the at least one second die, wherein a thermal conductivity of the thermal dissipation structure is in a range of 120 W / (m·K) to 10,000 W / (m·K), a thickness of the thermal dissipation structure is in a range of 5 μm to 1,500 μm, and an area of a surface of the thermal dissipation structure facing the backside surface of the at least one second die is in a range of 10 mm2 to 860 mm2.

Methods and apparatus for mapping memory allocation to DRAM dies of a stacked memory modules are described herein. Memory address ranges in a module employing 3DS (three dimensional stacked) DRAMs (Dynamic Random Access Memories) comprising stacked DRAM dies are mapped to DRAM dies in the module based on a layer of the DRAM dies, where dies in different layers have different thermal dissipation characteristic. Chunks of the memory address range are allocated to software entities such as virtual machines (VMs) and / or applications based on a memory access rate of the VMs / applications and the thermal dissipation characteristics of the DRAM die layers, wherein VMs / applications with higher memory access rate are allocated memory on DRAM dies with higher thermal dissipation. In one aspect, memory ranks are associated with respective die layers. In response to detection of change in access rates, memory may be migrated between ranks. Interleaving at multiple levels is also supported.

A lunar structure comprising: a base configured to provide active thermal energy dissipation; a retractable mast coupled to the base, the retractable mast comprising deployable interlocking actuated bands, wherein the deployable interlocking actuated bands extend in a vertical direction upward from the base; and a thermal dissipation system coupled to the base, the thermal dissipation system comprising a variable geometry radiator system configured to provide passive thermal energy dissipation, wherein the variable geometry radiator system comprises a radiator and is configured to adjust the radiator from a first position in which the radiator is in a folded configuration at the base to a second position in which the radiator is extended to form a substantially flat plane.

One aspect of the present disclosure pertains to an integrated circuit (IC) structure and method of fabricating thereof. The IC structure includes a transistor device formed on a substrate where the transistor device having source / drain (S / D) regions and a gate structure. A multi-layer interconnect (MLI) structure including metal lines and metal vias embedded in an intermetal dielectric (IMD) layer is formed over the substrate. And a thermal dissipation layer is formed having a surface with a plurality of peaks and valleys disposed over at least a portion of the MLI structure. A bonding layer is disposed over the thermal dissipation layer and covering the plurality of peaks and valleys.

A gas detector is provided. The gas detector has a housing defining a cavity and a display module is disposed within the cavity. The display module has a first PCB, a base plate, a metal enclosure, and a thermal gap pad. The metal enclosure is positioned on top of the base plate, and the thermal gap pad is disposed in between the metal enclosure and the second PCB. The second PCB is disposed on top of the thermal gap pad.

A thermal dissipation system for an integrated circuit (IC) includes an IC disposed on a substrate and a heat sink including a body having a first surface including a first part coupled to a side of the IC opposite the substrate and a second part disposed away from the IC and positioned in spaced relation to the substrate. A set of legs support at least the second part of the body in spaced relation to the substrate. The set of legs may be part of the body or may be part of a carrier disposed between the second part of the first surface of the body and the substrate. The carrier includes an opening through which a portion of the substrate that includes the first part that is coupled to the side of the IC opposite the substrate extends.

A glass substrate architecture for mounting RF components may be configured for heat dissipation. Existing millimeter wave radiofrequency (RF) systems mount the radiofrequency integrated circuits (RFICs) on a printed circuit board on the opposite side of a heat sink, making it difficult to dissipate heat away from the RFICs during operation. This architecture mounts the RFICs directly to a back side of a glass waveguide substrate, and thermally couples the top side of the RFICs to a conductive pad on the underlying printed circuit board with a thermal pathway to the heatsink. This leads to a much more effective dissipation of heat away from the RFICs and eliminates the need for additional cooling systems or throttling the performance of the radar system.

A chip includes an active device, a first backside silicon layer disposed below the active device, a first backside metal path electrically coupled to the active device and extending through the first backside silicon layer, and a first electrical barrier disposed between one or more sides of the first backside metal path and the first backside silicon layer.

Semiconductor devices and methods of forming the same include a device layer, a back-end-of-line (BEOL) layer on the device layer, a combined bonding layer, and a handler wafer. A heat-conducting channel is partially embedded in the combined bonding layer and partially embedded in the handler wafer.

The application discloses a high-concentration wastewater dynamic mixing control method based on biochemical treatment redundancy, relates to the technical field of wastewater treatment, and comprises the following steps: constructing a joint probability density function based on heat flow and dielectric spectrum signals; calculating a Riemann scalar curvature representing biochemical treatment redundancy based on the joint probability density function and taking a Fisher information matrix as a measurement; and adjusting a mixing ratio of wastewater and dilution water in real time according to the size of the Riemann scalar curvature. The method can solve the problems that the existing mixing control adopts a simplified adjustment logic, breaks the nonlinear coupling relationship between micro-electric polarization and macro-thermal dissipation, and cannot utilize the singularity divergence characteristics of the Riemann scalar curvature, thereby causing adjustment overshoot and response lag.

The invention relates to a high-thermal-conductivity C / C-HEC-SiC composite material and a preparation method thereof.The high-thermal-conductivity C / C-HEC-SiC composite material is composed of a high-thermal-conductivity pitch-based carbon fiber skeleton, a high-thermal-conductivity carbon filler, a refractory metal carbide high-entropy phase and a SiC ceramic matrix, and the high-thermal-conductivity C / C-HEC-SiC composite material is prepared by synthesizing superfine (Hf < 0.25 > Zr < 0.25 > Ta0 < 0.25 > Ti < 0.25 >) C high-entropy ceramic powder with a core-shell structure; the outer layer is mainly a carbon layer with a high graphitization degree, and the carbon layer is introduced into a high-thermal-conductivity C / C framework by adopting a high-entropy slurry matrix modification process, so that the high-content high-entropy matrix modified C / C composite material is prepared. And through the structure of the high-entropy ceramic matrix, the high-temperature ablation resistance of the material is further improved, and a continuous oxide protective film can be formed on the surface of the material after 90 s of oxyacetylene ablation. The surface heat of the composite material is quickly dredged to slow down the surface heat and stress concentration of the material in the ablation process and reduce the damage to the surface structure, and the room temperature thermal conductivity of the composite material is greater than or equal to 75W / m.K. The composite material has wide application prospects in the fields of aerospace thermal structure protection and heat dissipation and heat conduction.

A surface acoustic wave device including a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a polymeric roof layer arranged over the piezoelectric layer and interdigital transducer electrode. The polymeric roof layer is spaced apart from the piezoelectric layer to define a cavity to accommodate the interdigital transducer electrode. The polymeric roof layer is supported along a span of the polymeric roof layer by at least one pillar. The thermal conductivity of the pillar is greater than the thermal conductivity of the polymeric roof layer. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.

The present invention discloses a device structure including heat removal structure (such as high thermal conductivity column and / or plate within the semiconductor substrate) to enhance heat dissipation. The device structure comprises a semiconductor substrate with an original semiconductor surface; a circuit element located within a semiconductor body region of the semiconductor substrate; and a vertical heat dissipation column in the semiconductor substrate and surrounding the semiconductor body region. Wherein the vertical heat dissipation column comprises a thermal dissipation material with a thermal conductivity higher than that of the semiconductor substrate or that of silicon oxide.

A heat dissipation device includes a substrate with a network of thermally-conductive vias and thermally-conductive layers. The substrate has a first surface and a second surface opposite to the first surface. A heat dissipation interface layer including a stack of a first layer made of a first thermally-conductive material and a second layer made of a second thermally-conductive material. The first material is different from the second material. A surface of the first layer is coplanar with the first surface of the substrate. At least one of the thermally-conductive vias of said network supports and is in contact with the first layer. At least one opening thoroughly crosses the stack of the first and second layers. Material of the substrate fills the opening in the first layer.

The invention relates to a thermal dissipation device, in particular for a motor vehicle, the device comprising a heat pipe (10) configured for heat exchange between a hot source, comprising an electrical member (14), and a cold source (16), the device further comprising a first thermal interface member (18) having a first heat exchange surface in contact with the heat pipe (10) and a second heat exchange surface intended to come into contact with one of the hot source or cold source for heat exchange between the heat pipe (10) and the hot source or cold source via the first thermal interface member (18), the device being configured to apply an elastic force (F) between the heat pipe (10) and the first thermal interface member (18).

An electrocaloric heat dissipation device is formed by inserting metal layer-pyroelectric layer-metal layer (MPM) structures between the metallization layers in a metal interconnect. Electric fields are alternately applied and relaxed to induce temperatures of the pyroelectric layers to cycle and drive heat transfer. The heat dissipation device may be placed adjacent a hot spot in a power management integrated circuit (PMIC) and is particularly useful when the PMIC is in a 3D package. In some embodiments, the MPM structures are inserted around circuit wiring. Interconnects for the heat dissipation device may replace dummy metal wiring.

The invention relates to a thermal dissipation device, in particular for a motor vehicle, the device comprising a heat pipe (10) configured for heat exchange between, on the one hand, a hot source (12) comprising an electrical member (14), and, on the other hand, a cold source (16), the device further comprising one or more thermal interface members (18, 20) configured for heat exchange between the heat pipe (10) and one of the hot or cold sources (12, 16), the one or more thermal interface members (18, 20) being configured to allow an angular orientation of the heat pipe (10).

Heat dissipation and grounding of integrated circuit (IC) devices with backside power delivery networks are discussed. An IC device layer between front and back interconnect sections, mainly comprised of an insulating material, is coupled to a crystalline heat sink layer or a metal thermal ground layer by an array of thermal pillars extending through the insulating material. The crystalline heat sink layer may include one or more thermal sensors, such as thermal sensing diodes, also coupled to the IC device layer by one or more thermal columns. The IC device layer and the crystalline layer are coupled by a hybrid bond that forms a thermal column through a continuous portion of the insulating material.