60 results about "Thermal dissipation" patented technology

The invention discloses an online defect detection method for a main-grid-free photovoltaic cell panel, which comprises the following steps of: obtaining a life distribution diagram of a main-grid-free photovoltaic cell through time-resolved photoluminescence, and obtaining a heat dissipation diagram of the main-grid-free photovoltaic cell through optically-induced phase-locked thermal imaging; an ultrasonic diagram of the main-grid-free photovoltaic cell is obtained through laser ultrasound; preprocessing and registering the life distribution diagram, the heat dissipation diagram and the ultrasonic diagram so as to uniformly map the life distribution diagram, the heat dissipation diagram and the ultrasonic diagram to a cell coordinate system, extracting minority carrier life, heat dissipation power, ultrasonic propagation time delay offset and scattering energy, and forming a multi-modal feature together with a thermal phase; and based on the abnormal score, performing defect detection and classification on the multi-modal features of the possible defect area to obtain classification results of electrical defects, thermal defects and mechanical defects. The invention also discloses a system for realizing the method. According to the invention, full-coverage detection of electrical, thermal and mechanical defects is realized.

The present application relates to high speed, high efficiency SiC power modules. A power converter module includes an active metal brazing (AMB) substrate, a power converter circuit, and an enclosure. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuit includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The enclosure is disposed over the power converter circuit and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, thermal dissipation of the power converter module can be significantly improved while maintaining structural integrity of the power converter module.

The invention discloses a structured cable with self-cooling and state self-sensing functions, and belongs to the technical field of wires and cables. The cable comprises a conductor, an insulating layer, a functional layer, a sensing layer and an outer sheath from inside to outside. The functional layer is made of an elastic porous material, a spiral cavity is embedded in the functional layer to form a passive heat dissipation channel, and efficient heat dissipation is achieved through the chimney effect. The sensing layer is formed by compounding a transparent polymer base material and thermochromic microcapsules, and when the local temperature of the cable exceeds a safety threshold value, the color changes, so that visual positioning of an overheat fault point is realized. The heat dissipation and state sensing functions are deeply integrated in the cable body structure, external equipment and energy are not needed, the cable has the advantages of being simple in structure, low in cost, safe, reliable and the like, and the problems that a traditional cable depends on an external heat dissipation and monitoring system, so that the structure is complex, cost is high, and operation and maintenance are inconvenient are effectively solved.

The invention relates to an electrosurgical instrument (10) for the thermal cutting of biological tissue, in particular of a patient. The instrument (10) comprises two jaws (15, 16), wherein at least one of the jaws (15) is configured to be moved towards and away from the other jaw (16). At least one of the jaws (15) comprises a thermal cutting element (22) having an electrically conductive cutting conductor (36) and an electrically conductive return conductor (37) which are electrically connected to each other. The cutting element (22) is arranged such that the cutting conductor (36) is thermally exposed at least on the side of the one jaw (15) facing the other jaw (16), and such that the return conductor (37) is surrounded by an insulation (34). The return conductor (37) comprises a lower electrical resistance than the cutting conductor (36) in the direction of the current flow, and preferably a higher thermal conductivity than the cutting conductor. In doing so, during the supply of electrical current to the cutting element (22), less heat and temperature are generated at the return conductor (37) than in the cutting conductor (36), and the return conductor (37) can be used for thermal dissipation.

A semiconductor package includes a first die, at least one second die and a thermal dissipation structure. The first die has a first bonding layer. The second die has a second bonding layer, wherein the second die is disposed on the first die, and the second bonding layer is bonded to the first bonding layer. The thermal dissipation structure is disposed on a backside surface of the at least one second die, wherein a thermal conductivity of the thermal dissipation structure is in a range of 120 W / (m·K) to 10,000 W / (m·K), a thickness of the thermal dissipation structure is in a range of 5 μm to 1,500 μm, and an area of a surface of the thermal dissipation structure facing the backside surface of the at least one second die is in a range of 10 mm2 to 860 mm2.

Methods and apparatus for mapping memory allocation to DRAM dies of a stacked memory modules are described herein. Memory address ranges in a module employing 3DS (three dimensional stacked) DRAMs (Dynamic Random Access Memories) comprising stacked DRAM dies are mapped to DRAM dies in the module based on a layer of the DRAM dies, where dies in different layers have different thermal dissipation characteristic. Chunks of the memory address range are allocated to software entities such as virtual machines (VMs) and / or applications based on a memory access rate of the VMs / applications and the thermal dissipation characteristics of the DRAM die layers, wherein VMs / applications with higher memory access rate are allocated memory on DRAM dies with higher thermal dissipation. In one aspect, memory ranks are associated with respective die layers. In response to detection of change in access rates, memory may be migrated between ranks. Interleaving at multiple levels is also supported.

A lunar structure comprising: a base configured to provide active thermal energy dissipation; a retractable mast coupled to the base, the retractable mast comprising deployable interlocking actuated bands, wherein the deployable interlocking actuated bands extend in a vertical direction upward from the base; and a thermal dissipation system coupled to the base, the thermal dissipation system comprising a variable geometry radiator system configured to provide passive thermal energy dissipation, wherein the variable geometry radiator system comprises a radiator and is configured to adjust the radiator from a first position in which the radiator is in a folded configuration at the base to a second position in which the radiator is extended to form a substantially flat plane.

One aspect of the present disclosure pertains to an integrated circuit (IC) structure and method of fabricating thereof. The IC structure includes a transistor device formed on a substrate where the transistor device having source / drain (S / D) regions and a gate structure. A multi-layer interconnect (MLI) structure including metal lines and metal vias embedded in an intermetal dielectric (IMD) layer is formed over the substrate. And a thermal dissipation layer is formed having a surface with a plurality of peaks and valleys disposed over at least a portion of the MLI structure. A bonding layer is disposed over the thermal dissipation layer and covering the plurality of peaks and valleys.

A gas detector is provided. The gas detector has a housing defining a cavity and a display module is disposed within the cavity. The display module has a first PCB, a base plate, a metal enclosure, and a thermal gap pad. The metal enclosure is positioned on top of the base plate, and the thermal gap pad is disposed in between the metal enclosure and the second PCB. The second PCB is disposed on top of the thermal gap pad.

A thermal dissipation system for an integrated circuit (IC) includes an IC disposed on a substrate and a heat sink including a body having a first surface including a first part coupled to a side of the IC opposite the substrate and a second part disposed away from the IC and positioned in spaced relation to the substrate. A set of legs support at least the second part of the body in spaced relation to the substrate. The set of legs may be part of the body or may be part of a carrier disposed between the second part of the first surface of the body and the substrate. The carrier includes an opening through which a portion of the substrate that includes the first part that is coupled to the side of the IC opposite the substrate extends.

A glass substrate architecture for mounting RF components may be configured for heat dissipation. Existing millimeter wave radiofrequency (RF) systems mount the radiofrequency integrated circuits (RFICs) on a printed circuit board on the opposite side of a heat sink, making it difficult to dissipate heat away from the RFICs during operation. This architecture mounts the RFICs directly to a back side of a glass waveguide substrate, and thermally couples the top side of the RFICs to a conductive pad on the underlying printed circuit board with a thermal pathway to the heatsink. This leads to a much more effective dissipation of heat away from the RFICs and eliminates the need for additional cooling systems or throttling the performance of the radar system.

A chip includes an active device, a first backside silicon layer disposed below the active device, a first backside metal path electrically coupled to the active device and extending through the first backside silicon layer, and a first electrical barrier disposed between one or more sides of the first backside metal path and the first backside silicon layer.

Semiconductor devices and methods of forming the same include a device layer, a back-end-of-line (BEOL) layer on the device layer, a combined bonding layer, and a handler wafer. A heat-conducting channel is partially embedded in the combined bonding layer and partially embedded in the handler wafer.

The application discloses a high-concentration wastewater dynamic mixing control method based on biochemical treatment redundancy, relates to the technical field of wastewater treatment, and comprises the following steps: constructing a joint probability density function based on heat flow and dielectric spectrum signals; calculating a Riemann scalar curvature representing biochemical treatment redundancy based on the joint probability density function and taking a Fisher information matrix as a measurement; and adjusting a mixing ratio of wastewater and dilution water in real time according to the size of the Riemann scalar curvature. The method can solve the problems that the existing mixing control adopts a simplified adjustment logic, breaks the nonlinear coupling relationship between micro-electric polarization and macro-thermal dissipation, and cannot utilize the singularity divergence characteristics of the Riemann scalar curvature, thereby causing adjustment overshoot and response lag.

A surface acoustic wave device including a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a polymeric roof layer arranged over the piezoelectric layer and interdigital transducer electrode. The polymeric roof layer is spaced apart from the piezoelectric layer to define a cavity to accommodate the interdigital transducer electrode. The polymeric roof layer is supported along a span of the polymeric roof layer by at least one pillar. The thermal conductivity of the pillar is greater than the thermal conductivity of the polymeric roof layer. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.

The present invention discloses a device structure including heat removal structure (such as high thermal conductivity column and / or plate within the semiconductor substrate) to enhance heat dissipation. The device structure comprises a semiconductor substrate with an original semiconductor surface; a circuit element located within a semiconductor body region of the semiconductor substrate; and a vertical heat dissipation column in the semiconductor substrate and surrounding the semiconductor body region. Wherein the vertical heat dissipation column comprises a thermal dissipation material with a thermal conductivity higher than that of the semiconductor substrate or that of silicon oxide.

The invention relates to a thermal dissipation device, in particular for a motor vehicle, the device comprising a heat pipe (10) configured for heat exchange between a hot source, comprising an electrical member (14), and a cold source (16), the device further comprising a first thermal interface member (18) having a first heat exchange surface in contact with the heat pipe (10) and a second heat exchange surface intended to come into contact with one of the hot source or cold source for heat exchange between the heat pipe (10) and the hot source or cold source via the first thermal interface member (18), the device being configured to apply an elastic force (F) between the heat pipe (10) and the first thermal interface member (18).

An electrocaloric heat dissipation device is formed by inserting metal layer-pyroelectric layer-metal layer (MPM) structures between the metallization layers in a metal interconnect. Electric fields are alternately applied and relaxed to induce temperatures of the pyroelectric layers to cycle and drive heat transfer. The heat dissipation device may be placed adjacent a hot spot in a power management integrated circuit (PMIC) and is particularly useful when the PMIC is in a 3D package. In some embodiments, the MPM structures are inserted around circuit wiring. Interconnects for the heat dissipation device may replace dummy metal wiring.

The invention relates to a thermal dissipation device, in particular for a motor vehicle, the device comprising a heat pipe (10) configured for heat exchange between, on the one hand, a hot source (12) comprising an electrical member (14), and, on the other hand, a cold source (16), the device further comprising one or more thermal interface members (18, 20) configured for heat exchange between the heat pipe (10) and one of the hot or cold sources (12, 16), the one or more thermal interface members (18, 20) being configured to allow an angular orientation of the heat pipe (10).

A method for fast laser heating and cooling for nano / micro diamond is provided. The method includes performing laser irradiation and thermal dissipation on a reduced graphene oxide (rGO) sample. The rGO sample is dispersed on transmission electron microscopy (TEM) copper grids and nanodiamonds containing nitrogen-vacancy (NV) centers are dispersed on the rGO sample. The rGO sample is placed in a vacuum chamber and NV spins are polarized and read out by green laser. Further, the spin states of NV spins are manipulated by microwave. The polarizing and reading out are conducted at room temperature, while the manipulating spin states is conducted at high temperatures. The heating and cooling rates are significantly improved using reduced graphene oxide as the laser absorber and heat drain, enabling coherent quantum operation at temperatures up to 1400 Kelvin, surpassing the Curie temperatures of all known magnetic materials.

Provided are systems, methods, and apparatuses for thermal dissipation vias for stacked memory modules (e.g., HBM modules). In one or more examples, the systems, devices, and methods include routing, for heat dissipation, a first through-silicon via (TSV) vertically between a first stack of memory and a second stack of memory; routing, for heat dissipation, a second TSV horizontally between at least one of: a physical layer (PHY) of the first stack of memory and a first memory die of the first stack of memory, or a PHY of the second stack of memory and a first memory die of the second stack of memory.

An antenna array may include a plurality of printed circuit boards (PCBs) oriented in a stacked arrangement, parallel to and spaced apart from one another. Each of the PCBs may include a linear array of antenna elements, which cooperate with the linear arrays of antenna elements on other PCBs to form a two-dimensional array of antenna elements. The PCBs may be supported at one end by a common backplate in a cantilevered manner, with the linear arrays of antenna elements located near the free end of the PCBs. The PCBs may include a thicker portion and a thinner portion, and the thinner portion may include a heat sink or other thermal dissipation structure.

A portable information handling housing has a hot spot at a surface of the housing associated with operational conditions, such as CPU thermal dissipation, and a heat conductive rubber foot that couples at the housing bottom side with a metallic portion, such as copper, that thermally interfaces with a rubberized foot having graphene and / or carbon nanotube powder to conduct thermal energy from the hot spot towards cooler portions of the housing.

A substrate is described with a thermal dissipation structure sintered to thermal vias. In one example, a microelectronic module includes a recess between first and second substrate surfaces. One or more thermal vias extend between the first substrate surface and the interior recess surface, wherein each of the thermal vias has an interior end exposed at the interior recess surface. A sintered metal layer is in the recess and in physical contact with the interior end of the thermal vias and a thermal dissipation structure is in the recess over the sintered metal layer. The thermal dissipation structure is attached to the substrate within the recess by the sintered metal layer, and the thermal dissipation structure is thermally coupled to the thermal vias through the sintered metal layer.

The present disclosure describes a bonded semiconductor structure and a method of forming the bonded semiconductor structure. The bonded semiconductor structure includes first and second substrates bonded with a bonding structure. The bonding structure provides high thermal conductivity and high bonding strength between the first and second substrates. The bonding structure includes bonding layers and adhesion layers, with the bonding layers including titanium oxide and the adhesion layers including titanium nitride. The method includes forming a first adhesion layer on the first substrate and a second adhesion layer on the second substrate. The method also includes forming a first bonding layer on the first adhesion layer and a second bonding layer on the second adhesion layer. The method further includes bonding the first and second substrates by bonding the first and second bonding layers together.

The present invention relates to a modular slide for a firearm, particularly applicable to semiautomatic pistols that operate by means of a blowback system during the firing cycle. The invention comprises a base slide structure (1) configured to move longitudinally on the firearm frame and including weight-reducing openings (1g) intended to reduce the component's mass while maintaining the structural strength necessary for its operation. The base structure further comprises structural coupling interfaces (1h) intended to allow the removable installation of interchangeable panels (2) on at least one side or top surface of the slide, at least partially covering said openings. The panels have a functional outer surface that may incorporate reliefs or textures intended to improve the user's grip during slide manipulation.Additionally, the panels can be manufactured with materials that provide ergonomic properties, thermal dissipation, vibration damping, identification or integration of sensors, keeping the mass and center of gravity within a functional range for the proper functioning of the weapon.

Abstract The present invention discloses a backlight module for Mini LED and its fixing structure. The backlight module comprises: a backlight, a base, a light guide plate and an optical film, wherein the base is formed with a receiving cavity having a concave-arched platform is provided and a bottom surface of the base is formed as a recessed structure, a plurality of protruding ribs are arranged at the recessed structure. The backlight comprises a substrate and a plurality of LED lamp beads, wherein the substrate is attached to the concave-arched platform. The light guide plate and the optical film are sequentially stacked over the LED lamp beads of the backlight. The module fixing structure further comprises: a first inner bracket, a second inner bracket, an outer frame and a positioning plug, wherein the first inner bracket and the second inner bracket are slidably arranged in the receiving cavity and configured to slidably close to each other so as to clamp the light guide plate and the optical film. The backlight module and its fixing structure of the present invention significantly enhance overall thermal dissipation performance, facilitating the installation and removal operation of the backlight module, thereby improving the product quality and extending the service life. Abstract The present invention discloses a backlight module for Mini LED and its fixing structure. The backlight module comprises: a backlight, a base, a light guide plate and an optical film, wherein the base is formed with a receiving cavity having a concave-arched platform is provided and a bottom surface of the base is formed as a recessed structure, a plurality of protruding ribs are arranged at the recessed structure. The backlight comprises a substrate and a plurality of LED lamp beads, wherein the substrate is attached to the concave-arched platform. The light guide plate and the optical film are sequentially stacked over the LED lamp beads of the backlight. The module fixing structure further comprises: a first inner bracket, a second inner bracket, an outer frame and a positioning plug, wherein the first inner bracket and the second inner bracket are slidably arranged in the receiving cavity and configured to slidably close to each other SO as to clamp the light guide plate and the optical film. The backlight module and its fixing structure of the present invention significantly enhance overall thermal dissipation performance, facilitating the installation and removal operation of the backlight module, thereby improving the product quality and extending the service life. 20 25 20 45 64 18 J un 2 02 5 2 0 2 5 2 0 4 5 6 4 1 8 J u n 2 0 2 5 2 0 2 5 2 0 4 5 6 4 1 8 J u n 2 0 2 5 13 1 / 9 Fig.1 1 / 9 100 140 130 110 HIK 120 Fig.1 13 20 25 20 45 64 18 J un 2 02 5 J u n 2 0 2 5 2 0 2 5 2 0 4 5 6 4 1 8 1 3 0 J u n 2 0 2 5 2 0 2 5 2 0 4 5 6 4 1 8 1 3 0

The invention relates to a thermal dissipation device, in particular for a motor vehicle, which device comprises a heat pipe (10) configured for heat exchange between a hot source (12) comprising an electrical member (14), and a cold source, the device further comprising a first so-called hot thermal interface member (20) and electrical conductors (22) intended to be electrically connected to electrical connection terminals of the electrical member (14), the terminals having different electrical potentials, the hot thermal interface member (20) being configured for the transfer of heat between the heat pipe (10) and the electrical conductors (22), as well as for establishing a thermal bridge between the electrical conductors (22) while electrically insulating them from one another, the hot thermal interface member (20) comprising an attachment flange (30) intended to be attached to the electrical conductors (22).

A composite package may have a feature for enhancing thermal dissipation. The feature may include an array of metal pillar located on a backside a semiconductor die. Alternatively, the feature may include a cavity, to which a backside surface of a semiconductor die is exposed and which is laterally surrounded by a portion of a molding compound die frame.

According to the embodiment of the present invention, a semiconductor device comprises a first nanodevice including a plurality of first transistors. The first nanodevice includes a first placeholder. A backside interlayer dielectric (BILD) layer is in direct contact with a first portion of sidewalls of the first placeholder. The BILD layer is comprised of a first dielectric material. A backside thermal dissipation dielectric is in direct contact with a backside surface of the BILD layer. The backside thermal dissipation dielectric is comprised of a second dielectric material.