194 results about "Thermal dissipation" patented technology

The invention relates to a method for determining a total fluid volume flow (1) in the region of an implanted vascular support system (2), comprising the following steps: a) determining a reference temperature (3) of the fluid, b) determining a motor temperature (4) of an electric motor (5) of the support system (2), c) determining the thermal dissipation loss (6) of the electric motor (5), d) ascertaining the total fluid volume flow (1) using the reference temperature (3), the motor temperature (4), and the thermal dissipation loss (6) of the electric motor (5).

An apparatus includes a Dewar having an endcap. The apparatus also includes a heat sink and a multiaxial thermal shoe having a thermal interface material and configured to thermally couple the endcap of the Dewar to the heat sink via one of at least two axial surfaces. The multiaxial thermal shoe is configured to transfer thermal energy between the endcap of the Dewar and the heat sink without structurally coupling the Dewar to the heat sink. The multiaxial thermal shoe may be configured to hold the thermal interface material against the endcap. The multiaxial thermal shoe may couple to the heat sink via a first axial surface in-line with an optical centerline or a second axial surface crosswise to the optical centerline.

The invention discloses a high-strength safety protection type electrodialyzer, and relates to the technical field of electrodialyzers, the high-strength safety protection type electrodialyzer comprises a protection frame, an electrodialyzer body is fixedly mounted in the protection frame, a rotating door is rotatably mounted on the inner wall of the protection frame, a rainproof plate is fixedly mounted on the top of the protection frame, and a heat dissipation opening is formed in the surface of the protection frame; a scraping plate is arranged on the inner wall of the heat dissipation opening; the rain and snow prevention device is arranged on the surface of the protection frame, the rain and snow prevention device comprises a supporting frame, a winding device, a linear motor, a sliding block, a fixing rod, a sliding rail, an elastic telescopic rod, a triangular block and a rotating scraping plate, the sliding block moves downwards to drive the fixing rod to move downwards, and the fixing rod moves downwards to make contact with the triangular block; the supporting frame is fixedly installed on the surface of the protection frame, a scraper blade is rotated to move downwards to scrape the filter screen, and the situation that too much dust adheres to the filter screen, the heat dissipation effect of equipment becomes poor, and normal operation of the equipment is affected is prevented.

One aspect of the present disclosure pertains to a method of semiconductor device fabrication. The method includes forming a transistor on a semiconductor substrate, forming a first metal layer and an overlying second metal layer over the transistor, depositing a thermal dissipation layer over the overlying second metal layer, and annealing the thermal dissipation layer to a temperature above the threshold temperature. The depositing of the thermal dissipation layer is performed below a threshold temperature. During the annealing, the first metal layer and the overlying second metal layer are maintained below the threshold temperature.

The invention relates to a method for determining a total fluid volume flow (1) in the region of an implanted vascular support system (2), comprising the following steps: a) determining a reference temperature (3) of the fluid, b) determining a motor temperature (4) of an electric motor (5) of the support system (2), c) determining the thermal dissipation loss (6) of the electric motor (5), d) ascertaining the total fluid volume flow (1) using the reference temperature (3), the motor temperature (4), and the thermal dissipation loss (6) of the electric motor (5).

The invention discloses a propeller-assisted immersed liquid cooling heat dissipation device for a data center cabinet. The propeller-assisted immersed liquid cooling heat dissipation device comprises the structural design of a heat sink and a propeller and the combined design and arrangement deformation of the heat sink and the propeller. The heat sink is used for increasing the heat dissipation area of the chip, the thruster is arranged on the front portion or the rear portion of a heat sink fin, and the thruster accelerates a local flow field by generating suction force and thrust force in cooling liquid, so that the heat dissipation strengthening effect is achieved. Aiming at different types of heat dissipation, noise, vibration and energy consumption requirements, the invention comprises a plurality of design and assembly modes of propellers and heat sinks; wherein the designed parameters comprise the total arrangement number of the heat sink-propeller combination in the server, the relative positions of the propellers and the heat sinks, the body structure design of the propellers and the heat sinks and the number of the propellers matched with the single heat sinks. According to the invention, the single-phase immersion liquid cooling has higher heat dissipation capability, the use scene of the single-phase immersion liquid cooling in the cooling of the high-power chip server is expanded, the installation is simple and convenient, and the server does not need to be greatly changed.

The present disclosure provides an integrated circuit (IC) structure in accordance with some embodiments. The IC structure includes a circuit structure having semiconductor devices formed on a first substrate, an interconnect structure over the semiconductor devices; and a thermal dissipation structure formed on a second substrate. The second substrate is boned to the circuit structure such that the thermal dissipation structure is interposed between the first and second substrates. The thermal dissipation structure includes a diamond-like carbon (DLC) layer. The DLC layer includes a bottom portion having large grain sizes and a top portion having fine DLC grain sizes.

The invention discloses an online defect detection method for a main-grid-free photovoltaic cell panel, which comprises the following steps of: obtaining a life distribution diagram of a main-grid-free photovoltaic cell through time-resolved photoluminescence, and obtaining a heat dissipation diagram of the main-grid-free photovoltaic cell through optically-induced phase-locked thermal imaging; an ultrasonic diagram of the main-grid-free photovoltaic cell is obtained through laser ultrasound; preprocessing and registering the life distribution diagram, the heat dissipation diagram and the ultrasonic diagram so as to uniformly map the life distribution diagram, the heat dissipation diagram and the ultrasonic diagram to a cell coordinate system, extracting minority carrier life, heat dissipation power, ultrasonic propagation time delay offset and scattering energy, and forming a multi-modal feature together with a thermal phase; and based on the abnormal score, performing defect detection and classification on the multi-modal features of the possible defect area to obtain classification results of electrical defects, thermal defects and mechanical defects. The invention also discloses a system for realizing the method. According to the invention, full-coverage detection of electrical, thermal and mechanical defects is realized.

The invention relates to the technical field of frequency converter heat dissipation, in particular to a heat dissipation method and system for a frequency converter, and the method comprises the steps: collecting the core substrate temperature, the internal environment temperature and the input power of the current frequency converter in real time; analyzing the collected data to evaluate insufficient heat dissipation in the frequency converter and efficiency difference between heating and heat dissipation; and adjusting the proportional gain Kp in the PID controller according to the thermal radiation efficiency difference to control the heat radiation intensity of the frequency converter. According to the invention, the response capability of the frequency converter to the heat dissipation intensity control is enhanced by using the relation between the heating and heat dissipation intensity of internal elements of the frequency converter.

An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive connector and a die that has an active side and a non-active side. The active side of the die is connected to the electrically conductive connector via interconnects. A molding compound encapsulates the die and portions of the electrically conductive connector. A thermally conductive contact extends from a thermal hotspot on the die to an entry surface of the molding compound.

The present application relates to high speed, high efficiency SiC power modules. A power converter module includes an active metal brazing (AMB) substrate, a power converter circuit, and an enclosure. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuit includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The enclosure is disposed over the power converter circuit and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, thermal dissipation of the power converter module can be significantly improved while maintaining structural integrity of the power converter module.

A structure is provided that includes a thermal dissipation measurement sensor located on the frontside or the backside of a semiconductor device. The thermal dissipation measurement sensor includes a first probe region and a second probe region that are interconnected by a plurality of metal lines that are arranged in a serpentine pattern and having at least one non-powered metal line located between, and spaced apart from, each of the metal lines.

The present invention relates to a method for crystallization of a metal oxide thin film by using thermal dissipation annealing (TDA) and exhibits an effect enabling high-temperature thermal annealing, which is essential for the performance improvement of a semiconductor material, a sensor material, and the like deposited on a thin-plate substrate, even without degrading the performance of the thin-plate substrate. In addition, a metal oxide thin film prepared by the method of the present invention is in the form of a two-dimensional nanosheet, and thus may have a low defect density (high crystallinity) and a wide surface area. Accordingly, based on the improved photosensitivity and photoreactivity, the metal oxide thin film may be utilized in a high-performance photoelectric device.

The utility model provides a system for testing the heat dissipation performance of a heat management assembly. The system comprises a controllable thermostat, a test fixture, a heat production unit, a temperature measurement unit, a power supply and a data processing platform, wherein the test fixture, the heat production unit and the temperature measurement unit are arranged in the controllable thermostat; the power supply and the data processing platform are arranged outside the controllable thermostat; the power supply supplies power to the test system; the test fixture comprises a fixture table used for supporting the thermal management assembly; the heat generation unit is used for generating heat to heat the heat management assembly; the temperature measuring unit is in electric signal connection with the data processing platform and used for measuring the temperature of the heat production unit and the heat management assembly and sending the temperature to the data processing platform; and the data processing platform is used for analyzing the temperature data to obtain a heat dissipation performance index of the heat management assembly. According to the heat dissipation performance testing system, software and hardware are integrated into an integrated testing system, the testing process from front-end power-up, middle-end testing to rear-end data processing is provided, the heat dissipation performance testing efficiency is improved, and therefore the stability and consistency of the heat dissipation performance of heat management assemblies of different manufacturers and batches can be rapidly evaluated.

The device has a first support element forming a first thermal dissipation surface and carrying a first power component; a second support element forming a second thermal dissipation surface and carrying a second power component, a first contacting element superimposed to the first power component; a second contacting element superimposed to the second power component; a plurality of leads electrically coupled with the power components through the first and / or the second support elements; and a thermally conductive body arranged between the first and the second contacting elements. The first and the second support elements and the first and the second contacting elements are formed by electrically insulating and thermally conductive multilayers.

Assemblies, systems, and methods are provided for dissipating heat from a receptacle assembly for holding a transceiver and attaching to a PCB. The receptacle assembly has a body defining a first end, a second end, a top surface extending between the first end and the second end, and a bottom surface extending between the first end and the second end opposite the top surface. A thermal dissipation device is disposed on the bottom surface, and the thermal dissipation device is configured to dissipate heat from the receptacle assembly to an external environment via the bottom surface. The thermal dissipation device may include at least one conductive element and at least one dissipation element and may interact with other cooling features of the PCB.

A method for manufacturing an integrated circuit includes forming an active area in a substrate, forming a gate structure on the active area, depositing an insulating layer, etching electrical contact openings to the gate structure and the active area, depositing a first conductive composition in the electrical contact openings to form an electrical contact layer that partially fills the electrical contact openings, filling a remainder of the electrical contact openings to form a plurality of electrical contacts. The method includes etching thermal contact openings to the active area, depositing a second conductive composition in the thermal contact openings to form a thermal contact layer that partially fills the thermal contact openings, wherein the first conductive composition differs from the second conductive composition, filling a remainder of the thermal contact openings to form a plurality of thermal contacts, and thermally connecting the plurality of thermal contacts and a heat dissipation structure.

The invention discloses a structured cable with self-cooling and state self-sensing functions, and belongs to the technical field of wires and cables. The cable comprises a conductor, an insulating layer, a functional layer, a sensing layer and an outer sheath from inside to outside. The functional layer is made of an elastic porous material, a spiral cavity is embedded in the functional layer to form a passive heat dissipation channel, and efficient heat dissipation is achieved through the chimney effect. The sensing layer is formed by compounding a transparent polymer base material and thermochromic microcapsules, and when the local temperature of the cable exceeds a safety threshold value, the color changes, so that visual positioning of an overheat fault point is realized. The heat dissipation and state sensing functions are deeply integrated in the cable body structure, external equipment and energy are not needed, the cable has the advantages of being simple in structure, low in cost, safe, reliable and the like, and the problems that a traditional cable depends on an external heat dissipation and monitoring system, so that the structure is complex, cost is high, and operation and maintenance are inconvenient are effectively solved.

The present disclosure provides an integrated circuit (IC) structure that includes a first substrate with a first surface having a normal direction along a first direction; a first IC chip bonded to the first substrate; and a second IC chip electrically connected to the first IC chip. The first and second IC chips are sealed in a same package having a sealing material layer, and the sealing material layer includes a first anisotropic thermal dissipation material. The first anisotropic thermal dissipation material is thermally conductive with a first thermal conductivity along the first direction and a second thermal conductivity along a second direction being perpendicular to the first direction. The second thermal conductivity is substantially greater than the first thermal conductivity.

Aspects disclosed include an integrated circuit (IC) package including two substrates and vertical interconnects coupling the two substrates, the vertical interconnects comprising a metal ball and metal pin combination to address an increased distance between substrates. The vertical interconnects are disposed in a mold layer between the two substrates. The mold layer also includes a die, a plurality of metal pins, and a plurality of metal balls coupled to the plurality of metal pins to form the vertical interconnects. Larger distances between the two substrates are desirable when a die's thickness is increased to increase thermal dissipation from the die. As an example, by utilizing a plurality of metal ball and pin combinations as vertical interconnects, larger distances between the two substrates may be advantageously achieved with reduced risk of electrical shorting between vertical interconnects and without compromising pitch between vertical interconnects.

In a general aspect, an electronic device assembly can include a semiconductor device assembly including a ceramic substrate; a patterned metal layer disposed on a first surface of the ceramic substrate; and a semiconductor die disposed on the patterned metal layer. The electronic device assembly can also include a thermal dissipation appliance. Ceramic material of a second surface of the ceramic substrate can be direct-bonded to a surface of the thermal dissipation appliance. The second surface of the ceramic substrate can be opposite the first surface of the ceramic substrate.

Embodiments disclose an optical module and an optical communication system including the same, the optical module including a substrate, an optical component positioned on the substrate and converting an electrical signal into an optical signal or converting an optical into an electrical signal, an electronic component driving the optical component, an optical fiber support fixing an optical fiber positioned away from the optical component, an optical wire optically connecting the optical component and one end of the optical fiber, a container accommodating the optical component, the electronic component, and the optical fiber and isolated from the outside, and coolant filled in the container, wherein the electronic component, the optical component, and the optical wire contact the coolant.

In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

A thermal dissipation device for a handheld electronic device is provided. The thermal dissipation device includes a thermoelectric cooling chip, a temperature sensor, a humidity sensor, and a processing unit. The thermoelectric cooling chip has a cold surface and a hot surface. The cold surface is attached on a heating surface of the handheld electronic device by means of a heat conduction structure, and has a cold surface temperature. The temperature sensor and the humidity sensor are disposed in an area adjacent to the thermoelectric cooling chip for generating an environmental temperature and an environmental humidity respectively. The processing unit is configured to calculate a dew point temperature based on the environmental temperature and the environmental humidity; and determine whether to stop the thermoelectric cooling chip or not based on the cold surface temperature, the dew point temperature, and a heating surface temperature of the handheld electronic device.

The present invention relates to an analysis method for the anisotropic thermal transport characteristics of a suspended WTe₂ film, comprising the following steps: S1, providing a suspended WTe₂ film; S2, determining the lattice orientation of the suspended WTe₂ film; S3, performing photo-heating Raman and electro-heating Raman tests along different lattice directions, thereby calculating the in-plane thermal conductivity and the thermal transport anisotropy ratio of the suspended WTe₂ film along the zigzag direction and the armchair direction. By analyzing the anisotropic thermal transport characteristics of the suspended WTe₂ through the method of the present invention, it can provide reference and guidance for the structural design, performance optimization, and regulation and management of thermal dissipation of WTe₂ functional devices.

The invention relates to an electrosurgical instrument (10) for the thermal cutting of biological tissue, in particular of a patient. The instrument (10) comprises two jaws (15, 16), wherein at least one of the jaws (15) is configured to be moved towards and away from the other jaw (16). At least one of the jaws (15) comprises a thermal cutting element (22) having an electrically conductive cutting conductor (36) and an electrically conductive return conductor (37) which are electrically connected to each other. The cutting element (22) is arranged such that the cutting conductor (36) is thermally exposed at least on the side of the one jaw (15) facing the other jaw (16), and such that the return conductor (37) is surrounded by an insulation (34). The return conductor (37) comprises a lower electrical resistance than the cutting conductor (36) in the direction of the current flow, and preferably a higher thermal conductivity than the cutting conductor. In doing so, during the supply of electrical current to the cutting element (22), less heat and temperature are generated at the return conductor (37) than in the cutting conductor (36), and the return conductor (37) can be used for thermal dissipation.

A semiconductor package includes a first die, at least one second die and a thermal dissipation structure. The first die has a first bonding layer. The second die has a second bonding layer, wherein the second die is disposed on the first die, and the second bonding layer is bonded to the first bonding layer. The thermal dissipation structure is disposed on a backside surface of the at least one second die, wherein a thermal conductivity of the thermal dissipation structure is in a range of 120 W / (m·K) to 10,000 W / (m·K), a thickness of the thermal dissipation structure is in a range of 5 μm to 1,500 μm, and an area of a surface of the thermal dissipation structure facing the backside surface of the at least one second die is in a range of 10 mm2 to 860 mm2.

A package structure includes a thermal dissipation structure including a substrate, a first encapsulant laterally covering the substrate, a die disposed on the substrate and including a sensing region, a second encapsulant laterally covering the die, and a redistribution structure disposed on the die and the second encapsulant. An outer sidewall of the second encapsulant is laterally offset from an outer sidewall of the first encapsulant. The die is electrically coupled to the substrate through the redistribution structure, and the redistribution structure includes a hollow region overlying the sensing region of the die.

The invention relates to a heat dissipation structure of an LVDT displacement sensor based on a micro channel, which belongs to the technical field of sensors and comprises an outer shell, a framework, a coil, an iron core, the micro channel, a water tank and a piezoelectric diaphragm. The framework is arranged in the outer shell, the coil is arranged around the periphery of the framework, and the iron core is arranged on the inner side of the framework and can move in the axial direction of the framework; the micro channel is arranged on the inner side of the framework and surrounds the iron core; the water tank is arranged near one end of the framework; a liquid channel is formed in the micro channel and communicated with the water tank through the liquid channel; the piezoelectric diaphragm is arranged close to the water tank and used for driving the heat conduction liquid in the water tank to flow along the liquid channel. According to the LVDT displacement sensor, the miniature heat dissipation channel is arranged in the framework, the piezoelectric diaphragm is combined to drive the heat conduction liquid to circularly flow, heat can be effectively conducted and released to the external environment, and the performance and working stability of the LVDT displacement sensor in application occasions with high linearity requirements are improved.