453 results about "Current conduction" patented technology

The invention relates to a micro-display device based on multilayer stacking and a preparation method thereof, the micro-display device comprises a driving backboard and a plurality of pixel layers, and the driving backboard is provided with a first type of electrode contacts; the multiple pixel layers are sequentially stacked in the Z direction, sub-pixels are arranged in each pixel layer, the bottom end of each sub-pixel is electrically connected to the corresponding first type of electrode contact, and the top end of each sub-pixel is electrically connected to the corresponding first conductive layer; in two adjacent pixel layers in the multiple pixel layers, the first conductive layer of one sub-pixel in the upper pixel layer is in direct contact with the first conductive layer of one sub-pixel in the lower adjacent pixel layer. The invention also discloses a preparation method of the micro display device. According to the invention, the processing technology and the cathode interconnection structure are simplified; and meanwhile, the current conduction capability is enhanced, the power consumption of the device is reduced, and the reliability and stability of the display device are improved.

The invention discloses a cover plate assembly, a battery and a battery module, and belongs to the technical field of power batteries. The cover plate assembly comprises a cover plate piece and a pole piece, the cover plate piece is provided with a mounting hole, and the pole piece is positioned in the mounting hole and is insulated from the cover plate piece; a groove structure is arranged on the end face, located on the inner side of the cover plate piece, of the pole piece, the groove structure is used for containing a tab of a battery cell, and the inner side wall of the groove structure is connected with the tab in a welded mode. According to the cover plate assembly, the current conduction path can be greatly shortened, and the connection impedance and the contact resistance of the battery are reduced. Meanwhile, the cover plate assembly reduces the potential failure risk caused by multi-component assembly and multiple welding.

The invention discloses a silicon carbide power module, which comprises a top diamond micro-channel heat dissipation layer, a bottom diamond micro-channel heat dissipation layer, an upper diamond layer, a middle diamond layer and a lower diamond layer, and is characterized in that an upper current conducting layer is arranged between the upper diamond layer and the middle diamond layer; a lower current conducting layer is arranged between the middle diamond layer and the lower diamond layer, a plurality of power chips are embedded in the middle diamond layer, and the power chips are electrically connected with the upper current conducting layer and the lower current conducting layer. According to the silicon carbide power module, the diamond heat dissipation layers integrated with the micro-channels are arranged at the top and the bottom respectively, the heat exchange efficiency and the heat dissipation effect of the power module can be effectively improved, an external heat dissipation device is not needed, the structure is simpler, special heat dissipation can be conducted on the area where the power chip is located, and the service life is prolonged. And the purposiveness and the effectiveness of heat dissipation are higher.

A semiconductor device and a power conversion device each comprise a drift layer, a gate electrode to face a well region and a source region via a gate insulating film, a source electrode provided on an interlayer insulating film covering the gate electrode and connected to the well region and the source region, a first separation region provided in an active region in which a plurality of MOSFETs each including the well region, the source region, and the gate electrode are arranged in the drift layer, the first separation region being provided to be connected to the drift layer and forming Schottky connection with the source electrode, and a surge current conduction region provided in the active region, and blocks connection between the source electrode and the drift layer, thereby enabling the achievement of a semiconductor device and a power conversion device that exhibit high surge tolerance.

The invention discloses a silver nanowire network film and a welding method, and relates to the technical field of nano material processing and flexible electronic device manufacturing, and the welding method comprises the following steps: taking a polyester film as a substrate, taking silver nanowires, and placing the silver nanowires in ethanol to prepare a silver nanowire dispersion liquid; spin-coating the silver nanowire dispersion liquid on a substrate, and drying to form a silver nanowire network electrode; a focused light scanning system is adopted to weld the silver nanowire film, a xenon lamp light source is adopted to form a light spot through focusing of a convex lens, an XY motor drives a platform to drive a silver nanowire network electrode to perform two-dimensional motion, and the light spot scans a to-be-welded area of the silver nanowire network electrode according to a preset path for welding; and naturally cooling to obtain the silver nanowire network film. Uniformity and stability of current conduction of the electrode network are guaranteed, and comprehensive and efficient node welding is achieved.

The utility model belongs to the technical field of batteries, and discloses a battery shell and a battery, the battery shell comprises a shell body and a cover plate assembly, the shell body is a hollow shell mechanism with an opening at one side, the cover plate assembly comprises a cover plate body, a first insulating part and a composite pole, the cover plate body is arranged at the opening of the shell body and seals the shell body, and the composite pole is arranged on the first insulating part. The cover plate body is used for forming an accommodating cavity for accommodating a pole group, the cover plate body is provided with a first penetrating structure through which a lug extends out of the accommodating cavity, the first insulating part is arranged on the cover plate body in an injection molding manner and is used for isolating the cover plate body from the lug, and the composite pole column is arranged on one side, deviating from the pole group, of the cover plate body and realizes current conduction with the lug. Through the arrangement of the first penetrating structure, the tab can realize current conduction with the composite pole located on the outer side of the accommodating cavity through the first penetrating structure, so that the space occupied by the composite pole and the space for connecting the bent tab with the composite pole are saved, the extra space occupation is reduced, the volume of the pole group can be further increased, and the energy density is improved.

The present application relates to the technical field of batteries, and provides a cell welding structure, a welding method, and a battery. The cell welding structure comprises: a winding body; a plurality of tab groups formed at an end portion of the winding body, the plurality of tab groups being radially arranged around the center of the winding body; and a current collector, welded to the side of the plurality of tab groups facing away from the winding body to form a plurality of welding spots. The present application can improve the uniformity of current conduction between die-cut tabs and electrode sheets, reduce the amount of current loss, reduce the number of welding spots, and improve work efficiency.

A high-safety transistor testing system and method with nanosecond-level delay is disclosed, belonging to the field of transistor testing. It enables transistor characteristic testing under arbitrary drain voltage stress values, drain voltage stress durations, and load currents based on nanosecond-level measurement delays, while ensuring the safety of the testing system and personnel. The circuit includes: a switch. S 1, S 2, S 3. Resistance R A , R C Schottky diode D 1, D 2. Power Inductor L ,power supply V DD Control switch S 1. The conduction time can control the high voltage that the subsequent circuit can withstand. V DD Duration; control switch S 2. On-time can control the power inductor L Current value at the end of charging; test switch S From the voltage and current of 3, we can determine the switch. S 3. Switching transient characteristics, on-resistance characteristics, etc. Simulation and experiments show that the measurement delay of switching to the test state after the drain voltage stress ends is on the order of nanoseconds, and there is no situation of "accidental opening of series switch leading to large current conduction", so the circuit safety is higher.

Electrodes configurable for capacitive touch sensing or inductive sensing are disclosed. The electrodes are formed from a plurality of tiled (connected) sense pixels, each sense pixel including two or four conductive elements. The conductive elements within the plurality of sense pixels of an electrode are connected to form conductive pathways within the electrode. These conductive pathways enable each electrode to be configured as a touch electrode for single-ended or differential capacitive touch sensing, or into one or two loops for inductive sensing. In pixels with four conductive elements, two conductive elements are formed with a comb shape for maximizing current conduction during inductive sensing and maximizing capacitive coupling during touch sensing, and two conductive elements are formed as bypasses. In electrodes formed from sense pixels with four conductive elements, each conductive pathway within the electrode is formed as an alternating series of comb-shaped conductive elements and bypasses.

A high-current connection system includes a high-current-conducting bridging part which can be fastened to each of two high-current busbars and by which the distance between the high-current busbars can be current-conductively bridged and with which at least two spaced-apart spherically inwardly domed connection faces are associated, for each high-current busbar, a high-current-conducting compensation element which can be disposed between the bridging part and the associated high-current busbar and which has a spherically outwardly domed compensation face which, when the bridging part is in the fastened state, faces one of the spherically inwardly domed connection faces, and is electrically connected thereto, and for each high-current busbar, at least one fastening element which can be associated with the high-current busbar, and by means of which the bridging part and the associated compensation element can be fastened to the associated high-current busbar and secured against movement relative to the associated high-current busbar.

The present invention belongs to the field of battery technology and discloses a battery assembly method and a battery, the method comprising: S1, placing a protective end plate on a first surface of a pole group provided with a pole ear; S2, coating an insulating film on multiple side surfaces and the outer side of the second surface of the pole group, and hot-melting the insulating film and the protective end plate to form a pole group unit; S3, installing the pole group unit into the cavity of a battery shell; S4, placing a composite cover plate on the open portion of the battery shell; S5, welding the composite cover plate to the battery shell; S6, welding the composite pole post to the composite shell; S7, achieving current conduction between the composite pole post and the pole ear. By finally achieving current conduction between the pole ear and the composite pole post, the influence of other welding processes on the connection quality between the pole ear and the composite pole post is avoided, and the pole ear achieves current conduction with the composite pole post by extending out of the battery shell, reducing the space occupied by the internal space of the battery shell, improving the space utilization, increasing the pole group volume, and improving the energy density.

The disclosure relates to a power device (100), comprising: an n-type doped silicon carbide drift layer (103); a p-type doped well (104); an n-type doped source contact (106); an n-type doped substrate (101) acting as a drain contact; and a composite gate dielectric layer (111, 112) comprising a first dielectric layer (111) contributing to a first gate threshold voltage (V1) of the power device and a second dielectric layer (112) contributing to a second gate threshold voltage (V2) of the power device which is occasionally lower than the first gate threshold voltage (V1). The first dielectric layer (111) is overlapping the n-type doped source contact (106) and a first portion of the p-type doped well (104) to enable formation of a first part of a gate electrons channel (107). The second dielectric layer (112) is arranged above the remaining portion of the p-type doped well (104) to enable formation of the remaining part of the gate electrons channel (107) and thus current conduction through the gate electrons channel (107) in case that the second gate threshold voltage (V2) reaches the first gate threshold voltage (V1).

The invention provides a welding piece for battery welding and a welding device, and belongs to the technical field of welding devices. The welding piece for battery welding comprises a base material made of a conductive material, and the base material is electrically connected with an electrode during welding. A current guide structure is arranged on the base material, and a current path is formed among the multiple layers of tabs or the composite current collector when the current guide structure is welded; the base material is further provided with a temperature sensing assembly, the physical state of the temperature sensing assembly changes within a preset temperature interval, and a temperature feedback signal is output. The welding piece can be used for welding the battery tabs, contact resistance between the tabs (foils) can be reduced or eliminated through the flow guide structure, current conduction during welding is achieved, and therefore the welding quality of the tabs is improved.

The utility model provides a rechargeable wall lamp device. The rechargeable wall lamp device comprises a mounting seat, a control module, a storage battery module, a connecting seat and a light source rod, according to the charging wall lamp device, detachable connection and current conduction between the control module and the storage battery module, between the control module and the connecting base and between the connecting base and the light source rod are achieved in a magnetic attraction matching mode, a traditional wiring connection mode is omitted, and therefore the overall structure of the device is simplified, and mounting and dismounting are convenient. The rechargeable wall lamp device not only can be fixed on a vertical wall surface, but also can be fixed on a ceiling (namely a horizontal wall surface), and the mounting position of the rechargeable wall lamp device is more flexible and is not limited. Meanwhile, the outer sleeve can drive the light source rod to rotate around the central axis (namely the front-back direction) of the connecting base, and the light source rod can also rotate around the central axis of the connecting arm, so that flexible adjustment of the angle of the light source is achieved, and the use requirements of users are met to the maximum extent.

The invention provides a semiconductor device and a preparation method thereof. The semiconductor device includes a substrate, a channel layer, a barrier layer, a source, and a drain. The channel layer is located on one side of the substrate; the barrier layer is located on the side, away from the substrate, of the channel layer, the barrier layer comprises a first surface deviating from the channel layer, the first surface comprises ohmic contact areas, and the ohmic contact areas comprise at least one first ohmic contact area and at least one second ohmic contact area; the surface of the same ohmic contact area comprises a first sub-surface and a second sub-surface, and the second sub-surface is located on at least one side of the first sub-surface; in the first ohmic contact area and the second ohmic contact area which are adjacent, the second sub-surface of the first ohmic contact area at least comprises a first sub-area which is located on the side, facing the second ohmic contact area, of the first sub-surface, and at least part of the first sub-area of the first ohmic contact area is sunken relative to the first sub-surface of the first ohmic contact area. The current conduction efficiency of the semiconductor device can be improved.

The utility model provides an insulating shockproof foot, include: including shockproof foot body, shockproof foot body has opposite first end and second end, the first end surface has insulating material and is used for installing in equipment ground pin to prevent the first end with the equipment ground pin interval forms the conductive path, the second end is used for installing fixedly to shockproof foot body. The utility model discloses through using insulating material on the first end surface, and insulating material has high resistivity, can effectively prevent the current through, namely effectively blocked the current conduction between equipment ground pin and shockproof foot, reached the effect of electrical isolation, make the current unable to flow through shockproof foot to the ground, avoided equipment secondary grounding phenomenon, thereby avoided the influence equipment's work performance.

The application discloses a cavity sealing device suitable for inductive heating in a closed cavity, which comprises a ceramic substrate, the ceramic substrate is sealingly connected with the closed cavity, a first pipe and a second pipe are respectively arranged on the left side and the right side of the ceramic substrate, a gap is formed between the two pipes and the ceramic substrate to form a cavity, and the first pipe and the second pipe are respectively provided with a first sealing ring, a second sealing ring and a third sealing ring, the end of the first pipe is provided with an elastic structure which is in contact with the second pipe, the first pipe and the second pipe are further connected with a fastener, and the first pipe and the second pipe are both split conical structures which are hollow and communicated, the inner diameter of the second pipe is matched with the outer diameter of the first pipe; during operation, the conical structure is pressed to compress the edge sealing gasket to strengthen the sealing through the pressure difference between the inside and the outside of the closed cavity, the closed cavity can adapt to the case that the pressure in the cavity is less than or greater than the atmospheric pressure outside, the current conduction is ensured, the circumferential sealing ring ensures the flow of cooling water in the pipeline, the ceramic substrate is made of non-conductive ceramic material and can realize overall sealing, and the problem that the existing sealing device can only be used in a single pressure field is effectively solved.

A Schottky barrier tunneling field effect transistor biosensor with a tooth-shaped channel and multiple tunneling regions comprises the tooth-shaped channel, a source electrode is arranged on a protruding part of the tooth-shaped channel, grid electrodes are arranged in a concave part of the tooth-shaped channel and on the two outer sides of the tooth-shaped channel, a biomolecule detection cavity is formed between the grid electrodes and the tooth-shaped channel, and a plurality of tunneling regions are arranged in the biomolecule detection cavity. A gate dielectric layer is arranged at the bottom of the biomolecule detection cavity, and a drain electrode is arranged at the bottom of the tooth-shaped channel; the device is provided with more sources through the channels of the tooth-shaped structure, multi-directional conduction of current is formed, the working speed is increased, the biomolecule detection cavity is oppositely arranged on one sides of the three sources, more Schottky tunneling areas can be generated, the probability of Schottky tunneling of carriers is increased, and the sensitivity of the sensor is improved.

The embodiments of the present disclosure disclose a semiconductor device and a forming method thereof. The semiconductor device comprises a substrate, a gate electrode on the substrate, source-drain doped regions on the substrate on both sides of the gate electrode, a contact plug on the substrate, a bottom of the contact plug being electrically connected with the source-drain doped regions, and an isolation layer in the source-drain doped regions, the isolation layer being below the contact plug, an upper surface of the isolation layer being higher than a lower surface of the source-drain doped regions, and a material of the isolation layer comprising an insulating material. By introducing an insulating layer between the contact plug and the lower surface of the source-drain doped regions, a depletion layer generated at a junction interface between the source-drain doped regions and the substrate is blocked, the distance between the depletion layer and the contact plug is increased, and thus the junction interface leakage can be reduced without affecting the current conduction path of the device.

The invention discloses a double-negative one-state single-phase common-ground five-level inverter topology which comprises a photovoltaic cell PV, a double-negative one-state single-phase five-level inverter circuit, a single-phase output LC filter circuit and a single-phase load. The double-negative-one-state single-phase five-level inverter circuit comprises a direct-current side input filter capacitor Cdc, flying capacitors C1 and C2 and ten switching tubes S1 to S10, S2, S4, S5 and S9 are IGBTs (Insulated Gate Bipolar Translator) with fly-wheel diodes, and other switching tubes are IGBTs without fly-wheel diodes. According to the invention, complete suppression of the leakage current of the inverter can be realized; the amplitude of the AC-side output SPWM voltage is twice of the DC-side voltage, so that the utilization rate of the DC-side voltage is remarkably improved; the charge and discharge balance of the capacitor voltage is realized through the selection of the negative state, so that the waveform quality of the output voltage is improved; in each working mode, the number of switching tubes connected in series in a current conduction loop is small, and the loss of circuit switching devices is low.

Method for producing a heat and current conductor in power electronic circuits (202), in which a power electronic circuit is arranged on a printed circuit board (200, 500, 600, 700, 800), in which at least one metallic heat conductor tube (100, 400, 510, 710) is flattened at at least two locations (402, 502, 704), in which the at least two locations (402, 502, 704) are provided with a solderable surface, in which at least two metallic surfaces (206, 508), which are parts of conductor tracks, are provided on the printed circuit board (200, 500, 600, 700, 800), in which at least one metallic surface (206, 508) is located in the immediate vicinity of at least one power electronic component (202) of the power electronic circuit (202) arranged and electrically contacted with the at least one electronic component (202), wherein the at least one metallic heat conduction tube (100, 400, 510,710) at the at least two locations equipped with a solderable surface (302, 304, 306, 308, 402, 502, 704) are soldered to at least two provided metallic surfaces (206, 508) on the printed circuit board (200, 500, 600, 700, 800), wherein current transport via the at least one metallic heat conduction tube (100, 400, 510, 710) takes place at least between the at least two metallic surfaces (206, 508).

The utility model discloses a telescopic charging wire box, which comprises a bottom cover, a data line, a rotary wire coil, an electric brush disc, a PCB (Printed Circuit Board) and an upper cover, an elastic spring is arranged in the center of the rotary wire coil which is arranged in the bottom cover; the electric brush disc is arranged at the lower part of the rotating wire disc and is formed by fixing a plurality of PIN high-conductivity copper terminals through a fixing sheet, and a wiring copper sheet is arranged on the fixing sheet; the data line is wound on the rotary wire coil, one end of the data line passes through the wire hole and is welded with the wiring copper sheet on the electric brush disc, and the other end of the data line is an interface end and is exposed outside the bottom cover and the upper cover; annular copper exposing areas matched with the PIN high-conductivity copper terminals in an equivalent mode are formed on the upper surface of the PCB, the upper cover and the bottom cover are buckled together, and the PIN high-conductivity copper terminals are in contact conduction with the copper exposing areas. According to the utility model, the structure that the PCB is connected with a plurality of small electric brush discs is changed into the structure that the large electric brush disc is directly connected with the PCB, so that the direct contact area of the electric brush disc and the PCB is increased, overlarge voltage drop caused by conduction of large current is avoided, and the current conduction is ensured.

The application discloses a multi-pole ear lithium-sodium composite battery and a current collecting disc thereof, the composite battery is composed of a tubular sodium ion battery on the outer side and a cylindrical lithium ion battery on the inner side, high safety of the sodium ion battery and excellent charge-discharge performance at low temperature are exerted, meanwhile, use of the internal lithium ion battery guarantees high energy density of the battery. The lithium ion battery and the sodium ion battery are both designed as multi-pole ears, compared with a single-pole ear structure, the battery has lower internal resistance, and heat generation during use is significantly reduced. The current on the sodium ion battery can be conducted to the positive terminal of the lithium ion battery through the current collecting disc, so that the internal resistance of the composite battery is smaller. In a low-temperature environment, the sodium ion battery can be started first, and the lithium ion battery is started after reaching the optimal working temperature of the lithium ion battery, so that the battery performance at low temperature is improved and the service life of the battery is prolonged. The composite battery has the characteristics of strong environmental temperature adaptability, high safety and high cycle life.

The utility model belongs to the technical field of medical instrument ablation, and provides an ablation catheter capable of simultaneously injecting liquid and ablating, which comprises a conveying sheathing canal, a first channel, a second channel and a second channel, the ablation electrode is provided with a first cavity, the ablation electrode is arranged at the far end of the conveying sheath tube, the ablation electrode can be configured with ablation energy, the ablation electrode is provided with a plurality of first notches distributed at intervals in the length direction of the ablation electrode, and the first notches communicate with the first cavity; the shunt tube is arranged in the first cavity of the ablation electrode, the shunt tube is provided with a diversion cavity, one end of the diversion cavity is communicated with the first channel, the shunt tube is provided with a plurality of shunt holes distributed at intervals in the length direction of the shunt tube, the shunt holes are communicated with the first cavity of the ablation electrode and the diversion cavity, and the shunt holes correspond to the first notches in position. By the adoption of the structure, uniform circulation of injection can be achieved, the current conduction rate is increased, and the ablation efficiency is further improved.

According to the liquid metal rotary electric connector, in the connector, a circumferential annular groove used for containing liquid metal is formed in a liquid storage base plate; the rotating body is located above the liquid storage chassis, the rotating body and the liquid storage chassis can rotate relatively, the rotating body comprises a rotating body upper layer and a rotating body lower layer located at the bottom of the rotating body upper layer, the rotating body lower layer is located in the annular groove, and the rotating body lower layer is partially immersed in the liquid metal in the annular groove; when the rotating body rotates relative to the liquid storage base plate, solid-liquid electric contact between the rotating body and the liquid storage base plate is achieved through the liquid metal. The through-flow structure comprises an upper end and a lower end, the upper end is electrically connected with the rotating body, the lower end is electrically connected with the liquid storage base plate to form a current transmission path, current flows in from the upper end and passes through a solid-liquid contact interface of the rotating body and the liquid metal, the liquid metal and the liquid storage base plate, and the liquid metal is in contact with the liquid storage base plate. And the current flows out from the lower end to complete current conduction.

The invention relates to a composite current collector and a lithium battery, the composite current collector comprises an organic polymer layer and a conductive layer which are laminated, the organic polymer layer comprises spherulites, in a slicing state, the maximum width of the spherulites is 2-20 [mu] m, the spherulites with the maximum width of 3-7 [mu] m are first spherulites, the spherulites with the maximum width of 3-7 [mu] m are second spherulites, and the spherulites with the maximum width of 3-7 [mu] m are third spherulites. The number of the first spherulites accounts for more than or equal to 40% of the number of all the spherulites. The mechanical strength and heat resistance of the composite current collector can be effectively improved by accurately controlling the sizes of the spherulites and the number proportion of the first spherulites. Appropriate spherocrystal size distribution can avoid local thermal stress concentration and reduce the risk of thermal deformation of the organic polymer layer when the battery emits heat, so that the safety performance of the battery is enhanced, meanwhile, stable combination of the conductive layer and the organic polymer layer is ensured, smooth current conduction is ensured, and the working reliability is ensured.

A device comprising: a contact mechanism (or switch); an actuation knob; and a housing. The contact mechanism (or switch) comprises: an actuating mechanism; a first conductor; a second conductor; and a moveable contact moveable, by the actuating mechanism, between a first, closed, position in which a current conduc-tion path is defined through the first, second and moveable conductors of the contact mechanism and a second, open, position in which no current conduction path is defined. The actuation knob (or knob) comprises: a first side configured to drive the actuating mechanism upon rotation of the actuation knob, the first side comprising a cam portion which directly engages with the actuating mechanism; a second side opposite the first side; and an engagement portion protruding from the second side and configured for engagement by a user. The housing encloses both the contact mechanism and the first side of the knob.

The utility model discloses a power supply and distribution integrated box which comprises a box body, at least one side of the box body is provided with a plurality of wire outlets, each wire outlet is provided with a power line, the power lines are electrically connected with electrical parts in the box body through the wire outlets, a lifting blocking device is further arranged in the side wall, provided with the wire outlets, of the box body, and a fire sensing device is further arranged in the box body. The fire sensing device is connected with the lifting blocking device and used for controlling operation of the lifting blocking device, and the lifting blocking device is used for cutting off power supply of a power line and a fire spreading path. A lifting blocking device is arranged in the power supply and distribution integrated box, so that when a fire occurs in the power supply and distribution integrated box, a power line can be cut off in time, fire is prevented from spreading out along the power line, the fire risk is reduced, current of the power line is effectively prevented from being conducted into the box body through an insulating part, and the working safety of fire extinguishers is improved.

A power inverter includes first and second inputs and a plurality of power switches in communication with the first and second inputs. First, second and third outputs communicate with the plurality of power switches. First, second and third conductors are configured to connect the first, second and third outputs to an electric machine. Each of the first, second and third conductors comprise a plurality of twisted and segmented wires.

Semiconductor device (100), in particular a vertical transistor device, preferably based on gallium nitride, wherein the semiconductor device for current conduction is based on a 2-dimensional electron gas (2DEG).