739 results about "Current conduction" patented technology

An exemplary shock wave catheter system comprises: a catheter body comprising a lumen; an emitter wire configured to generate shock waves, wherein one or more gaps are formed between two or more portions of the emitter wire along a length of the catheter body, each of the one or more gaps forming a locus emitter; a carrier wire configured to conduct electricity to the emitter wire; and one or more electrical joints configured to electrically couple and join the emitter wire and the carrier wire.

The invention relates to a micro-display device based on multilayer stacking and a preparation method thereof, the micro-display device comprises a driving backboard and a plurality of pixel layers, and the driving backboard is provided with a first type of electrode contacts; the multiple pixel layers are sequentially stacked in the Z direction, sub-pixels are arranged in each pixel layer, the bottom end of each sub-pixel is electrically connected to the corresponding first type of electrode contact, and the top end of each sub-pixel is electrically connected to the corresponding first conductive layer; in two adjacent pixel layers in the multiple pixel layers, the first conductive layer of one sub-pixel in the upper pixel layer is in direct contact with the first conductive layer of one sub-pixel in the lower adjacent pixel layer. The invention also discloses a preparation method of the micro display device. According to the invention, the processing technology and the cathode interconnection structure are simplified; and meanwhile, the current conduction capability is enhanced, the power consumption of the device is reduced, and the reliability and stability of the display device are improved.

The invention relates to the technical field of circuit board performance detection, in particular to an intelligent test management system and method for a circuit board. The method comprises the following steps: continuously monitoring the current conduction amount of the hole site of the circuit board; when it is detected that the current conduction amount is lower than a preset current conduction amount threshold value, it is judged that the current conduction state of the hole site is abnormal, and abnormal state time and abnormal initial site coordinates are recorded; acquiring a circuit board hole site image according to the abnormal initial site coordinate; and identifying hole site internal characteristics of the circuit board hole site image, extracting a defect area of the hole site internal characteristics, and marking the defect area as a hole site potential defect area. Through the data processing technology, the laser scanning technology and the image detection technology, abnormal current conduction judgment on the hole site of the circuit board is achieved, the defect area image of the abnormal hole site of the circuit board is recognized, the defect optimization scheme of the circuit board is determined, and therefore the accuracy of circuit board testing is improved.

The invention relates to a low-inductance SiC half-bridge power module layout structure based on overlapped copper bar conduction. Under the structure, the overlapped copper bars are used for replacing bonding wires in a traditional packaging structure, pits are machined in the copper bars to be connected with the power electrodes on the top face of the chip, the copper bars are bent to be connected with the substrate coated copper, and current conduction is achieved. Based on the overlapped copper bar structure, when the upper switch tube and the lower switch tube are switched on, mutual inductance and mutual suppression exist between current paths on the lower conductive copper bar and the upper conductive copper bar, and the module has low parasitic inductance; two ends of the upper-layer copper bar and the lower-layer copper bar are fixedly connected with the substrate, and the middle positions of the upper-layer copper bar and the lower-layer copper bar are fixedly connected with a chip top surface electrode, so that the module reliability is high; the thicknesses of the upper and lower copper bars are adjustable to ensure the through-current capability of the module; the copper bar is low in processing cost, does not need a cushion block, and reduces the number of connection interfaces. Therefore, compared with the existing layout packaging structure, the module layout structure provided by the invention has outstanding advantages in the aspects of parasitic inductance, outflow capacity and cost, and is suitable for popularization and application.

The invention belongs to the technical field of batteries, and discloses a battery assembly method and a battery, and the method comprises the following steps: S1, coating a plurality of side surfaces of a pole group with insulating films; s2, a composite cover plate is arranged on the first surface of the pole group; s3, performing hot melting on the insulating film and the first insulating layer; s4, assembling the pole group of which the first surface is provided with the composite cover plate into the cavity of the battery shell; s5, installing a composite cover plate on the second surface of the pole group; s6, welding the composite cover plate and the battery shell; s7, welding the composite pole with the composite shell; and S8, realizing current conduction between the composite pole and the tab. Current conduction is finally realized by the tab and the composite pole, so that the influence of other welding procedures on the connection quality of the tab and the composite pole is avoided, and the tab extends out of the battery shell to realize current conduction with the composite pole, so that the occupation of the internal space is reduced, the utilization rate of the space is improved, and the production cost is reduced. And a space is provided for enlarging the pole group, and the energy density is improved.

The invention relates to a semiconductor device and a preparation method thereof. The semiconductor device comprises a semiconductor material layer; the first groove is located in the semiconductor material layer, the side wall and the bottom wall of the first groove are connected through an arc angle, and the included angle between the plane where the side wall is located and the plane where the bottom wall is located is an obtuse angle; the drain region is located in the semiconductor material layer on the periphery of the first groove, and the depth of the drain region is smaller than that of the first groove; the well region is located in the semiconductor material layer below the bottom wall; the field oxide layer extends on the part, between the well region and the drain region, of the bottom wall and the side wall; the gate dielectric layer is connected with the field oxide layer and covers part of the well region; the field plate is located on the field oxide layer; the grid electrode is located on the grid electrode dielectric layer; the source region is positioned on the surface layer of the well region; a current conduction path of the semiconductor device comprises a first current conduction path which is located in the semiconductor material layer and extends close to the bottom wall and a second current conduction path which extends close to the side wall. Therefore, the on-resistance of the device is reduced, and the voltage-resistant performance of the device is ensured at the same time.

Disclosed is a current sensor. In the current sensor, a primary-side current input copper bar comprises a differential copper bar area and a current shunting copper bar area connected in parallel. The differential copper bar area comprises a current conduction path in a U-shaped structure. The number of the current shunting copper bar area is one or more. Any current shunting copper bar area is placed with the differential copper bar area in a same horizontal plane or in different horizontal plane. The primary-side current input copper bar is integrally formed, or is formed by connecting more than one independent copper bars. A magnetic induction module secured on a circuit board is located above the current conduction path of U-shaped structure in the differential copper bar area. An output of the magnetic induction module forms an output signal of the current sensor. The current sensor has a large current measurement range, adjustable sensitivity and a strong resistance to external magnetic field interference. The input and output of the sensor are electrically isolated, and it can measure alternating currents and direct currents. The current sensor's structure is simple and cost effective.

The invention belongs to the technical field of batteries, and discloses a battery assembly method and a battery, the method comprises the following steps: S1, installing a protective end plate on a first surface and / or a second surface of a pole group; s2, the outer sides of a plurality of side faces of the pole group are coated with insulating films, and the insulating films and the protection end plates are subjected to hot melting to form pole group units; s3, loading the pole group unit into the cavity of the battery shell; s4, arranging the composite cover plates at the openings in the two sides of the battery shell; s5, welding the composite cover plate and the battery shell; s6, welding the composite pole and the composite shell; and S7, realizing current conduction between the composite pole and the tab. Current conduction is finally achieved through the tabs and the composite pole, so that the influence of other welding procedures on the connection quality of the tabs and the composite pole is avoided, and due to the fact that the tabs stretch out of the battery shell and the composite pole to achieve current conduction, occupation of the internal space of the battery shell is reduced, and the utilization rate of the space is improved.

The invention discloses a cover plate assembly, a battery and a battery module, and belongs to the technical field of power batteries. The cover plate assembly comprises a cover plate piece and a pole piece, the cover plate piece is provided with a mounting hole, and the pole piece is positioned in the mounting hole and is insulated from the cover plate piece; a groove structure is arranged on the end face, located on the inner side of the cover plate piece, of the pole piece, the groove structure is used for containing a tab of a battery cell, and the inner side wall of the groove structure is connected with the tab in a welded mode. According to the cover plate assembly, the current conduction path can be greatly shortened, and the connection impedance and the contact resistance of the battery are reduced. Meanwhile, the cover plate assembly reduces the potential failure risk caused by multi-component assembly and multiple welding.

The invention discloses a silicon carbide power module, which comprises a top diamond micro-channel heat dissipation layer, a bottom diamond micro-channel heat dissipation layer, an upper diamond layer, a middle diamond layer and a lower diamond layer, and is characterized in that an upper current conducting layer is arranged between the upper diamond layer and the middle diamond layer; a lower current conducting layer is arranged between the middle diamond layer and the lower diamond layer, a plurality of power chips are embedded in the middle diamond layer, and the power chips are electrically connected with the upper current conducting layer and the lower current conducting layer. According to the silicon carbide power module, the diamond heat dissipation layers integrated with the micro-channels are arranged at the top and the bottom respectively, the heat exchange efficiency and the heat dissipation effect of the power module can be effectively improved, an external heat dissipation device is not needed, the structure is simpler, special heat dissipation can be conducted on the area where the power chip is located, and the service life is prolonged. And the purposiveness and the effectiveness of heat dissipation are higher.

The invention relates to a BC solar cell and an electrode structure thereof. The electrode structure comprises main grids arranged at intervals in the transverse direction, auxiliary grids arranged on the main grids at intervals in the longitudinal direction and bonding pads arranged on the intersection points of the main grids and the auxiliary grids, the main grids comprise positive electrode main grids and negative electrode main grids which are arranged alternately, the negative electrode main grids are silver main grids, and the auxiliary grids are silver main grids. The positive electrode main grid comprises a silver main grid and an aluminum main grid, bonding pads on the silver main grid are silver bonding pads, and the aluminum main grid comprises a silver bonding pad and an aluminum bonding pad. According to the electrode of the BC solar cell, slurry corrosion is effectively reduced, the metal composite area is reduced, the current conduction performance is improved, meanwhile, the welding tension is guaranteed, and the welding reliability is improved.

A semiconductor device and a power conversion device each comprise a drift layer, a gate electrode to face a well region and a source region via a gate insulating film, a source electrode provided on an interlayer insulating film covering the gate electrode and connected to the well region and the source region, a first separation region provided in an active region in which a plurality of MOSFETs each including the well region, the source region, and the gate electrode are arranged in the drift layer, the first separation region being provided to be connected to the drift layer and forming Schottky connection with the source electrode, and a surge current conduction region provided in the active region, and blocks connection between the source electrode and the drift layer, thereby enabling the achievement of a semiconductor device and a power conversion device that exhibit high surge tolerance.

The invention relates to the technical field of wire harness conduction testing, in particular to a new energy wire harness conduction testing system, which automatically scans all point locations of a wire harness conduction testing jig, generates an activated point location set, applies signals to the activated point locations, obtains electrical connection states among the point locations, and combines loop data of the same main point location to test the conduction of the new energy wire harness. And a simplified conduction result set is generated, redundant data is reduced, and subsequent processing is facilitated. And the result confirmation module ensures the effectiveness and accuracy of the conduction result set through dual verification, and prevents non-defective products from being misjudged as defective products. And the memory verification module verifies the current conduction result set through memory, intelligently processes the loop memory by using a neural network, automatically judges whether the models of the wire harnesses are matched or not by comparing the conduction result set with the loop memory, and deletes the loop memory which does not need to be used any more, so that the verification capability of the system on the wire harnesses of different models is improved. The system effectively improves the efficiency, the accuracy and the reliability of the wire harness conduction test.

The invention discloses an excitation loss fault-tolerant control method and system of an electro-magnetic doubly salient motor, and belongs to the field of motor control. On the basis of rotating speed current double closed-loop control, the control mode of a current loop is improved, two electric cycles are divided into six current conduction states, the conduction state of a power tube is obtained in combination with a converter topological structure after motor excitation loss, the direction of three-phase current is changed, and therefore the commutation process of the current is optimized, and the current conversion efficiency is improved. The amplitude of current change is reduced, the torque pulsation of the motor after excitation loss is reduced, and the torque current ratio is improved. According to the invention, the problem that the torque pulsation is large and the torque current ratio is low when the electro-magnetic doubly salient motor adopts a traditional field loss fault-tolerant control strategy is solved. By changing the conduction sequence of the power tubes, the purposes of suppressing the torque ripple of excitation loss operation of the electro-magnetic doubly salient pole and reducing copper consumption are achieved, the algorithm control is simple, and the portability is high.

The invention discloses a wind generating set blade lightning protection resistor detection tool and detection method in the technical field of wind power generation equipment detection, and the wind generating set blade lightning protection resistor detection tool is of a hollow elliptical conical brass skeleton matched pure copper wire mesh structure. The profile curve is matched with the appearance of the blade tip of the wind generating set, and fixed connecting points are arranged on the two sides of the cone bottom and the cone top of the brass framework. High-strength brass is adopted as a framework structure, and the stability and durability of the tool are ensured by means of the excellent mechanical property of the high-strength brass; meanwhile, a low-resistance pure copper wire mesh is selected as a conductive part, so that the high efficiency of current conduction is guaranteed. And three fixed connection points are elaborately designed on the two sides and the top of the brass framework, so that the tool can be conveniently and stably mounted and fixed with a detected part, the reliability of the tool in the use process is ensured, and great convenience is provided for field detection operation.

The invention discloses a silver nanowire network film and a welding method, and relates to the technical field of nano material processing and flexible electronic device manufacturing, and the welding method comprises the following steps: taking a polyester film as a substrate, taking silver nanowires, and placing the silver nanowires in ethanol to prepare a silver nanowire dispersion liquid; spin-coating the silver nanowire dispersion liquid on a substrate, and drying to form a silver nanowire network electrode; a focused light scanning system is adopted to weld the silver nanowire film, a xenon lamp light source is adopted to form a light spot through focusing of a convex lens, an XY motor drives a platform to drive a silver nanowire network electrode to perform two-dimensional motion, and the light spot scans a to-be-welded area of the silver nanowire network electrode according to a preset path for welding; and naturally cooling to obtain the silver nanowire network film. Uniformity and stability of current conduction of the electrode network are guaranteed, and comprehensive and efficient node welding is achieved.

The utility model belongs to the technical field of batteries, and discloses a battery shell and a battery, the battery shell comprises a shell body and a cover plate assembly, the shell body is a hollow shell mechanism with an opening at one side, the cover plate assembly comprises a cover plate body, a first insulating part and a composite pole, the cover plate body is arranged at the opening of the shell body and seals the shell body, and the composite pole is arranged on the first insulating part. The cover plate body is used for forming an accommodating cavity for accommodating a pole group, the cover plate body is provided with a first penetrating structure through which a lug extends out of the accommodating cavity, the first insulating part is arranged on the cover plate body in an injection molding manner and is used for isolating the cover plate body from the lug, and the composite pole column is arranged on one side, deviating from the pole group, of the cover plate body and realizes current conduction with the lug. Through the arrangement of the first penetrating structure, the tab can realize current conduction with the composite pole located on the outer side of the accommodating cavity through the first penetrating structure, so that the space occupied by the composite pole and the space for connecting the bent tab with the composite pole are saved, the extra space occupation is reduced, the volume of the pole group can be further increased, and the energy density is improved.

Circuits and methods are provided that more effectively and efficiently implement multi-level converter circuits. A switched mode power supply is configured to be coupled between a reference potential and a voltage input source Vin, and includes a terminal configured to source an output voltage Vout and an output current Iout to a load. A current-sensitive element coupled between voltage input source Vin and the switched mode power supply conducts an input current Iin to the switched mode power supply and provides a sensing voltage related to input current Iin. An analog to digital converter provides digital representations of analog voltages presented thereto. A controller receives digital representations from the analog to digital converter and estimates output current Iout based upon the digital representations and an efficiency factor Eff.

A first ECU (control device) controls power supplied through a power supply switch, by turning the power supply switch on or off. A second ECU (switching device) turns a power switch on or off. In the first ECU, a processing unit executes non-power supply control processing different from processing relating to control of power supplied through the power supply switch. After a current conduction fault in which a current flows through the power supply switch despite an instruction being given to turn off the power supply switch is detected, the second ECU alternately turns the power switch on and off repeatedly.

An instrument for argon plasma surgery includes a plastic hose and an electrical conductor extending therethrough, which is formed by a thread of carbon fibers or a flexible or rigid body including carbon fibers. The carbon fibers serve for current conduction and thermal cooling of the plasma foot point which forms directly at the end of the electrical conductor at the carbon fibers or in a compact body in contact with the latter. The electrical conductor is arranged inside the lumen of the hose without being centered and thus without forced contact to the inner wall of hose. The high thermal conductivity of the conductor in the longitudinal direction results in a low thermal stress of hose. Due to this construction, the instrument can be provided with halogen-free plastics, advantageous for thermal disposal of the instrument.

The present application relates to the technical field of batteries, and provides a cell welding structure, a welding method, and a battery. The cell welding structure comprises: a winding body; a plurality of tab groups formed at an end portion of the winding body, the plurality of tab groups being radially arranged around the center of the winding body; and a current collector, welded to the side of the plurality of tab groups facing away from the winding body to form a plurality of welding spots. The present application can improve the uniformity of current conduction between die-cut tabs and electrode sheets, reduce the amount of current loss, reduce the number of welding spots, and improve work efficiency.

The invention relates to the technical field of sensitive amplifier circuits, and particularly discloses a self-feedback upper cross coupling sensitive amplifier circuit and a control method thereof.The circuit comprises an input circuit, an upper cross coupling circuit and a self-feedback circuit; the input circuit comprises two NMOS (N-channel Metal Oxide Semiconductor) and two PMOS (P-channel Metal Oxide Semiconductor), each NMOS is connected between one output node and the VSS, and the current conduction of the NMOS is controlled by one PMOS; two PMOS (P-channel Metal Oxide Semiconductor) in the upper cross coupling circuit are in cross connection between two output nodes and a VDD (Voltage Drain Drain) and are used for controlling the VDD to charge one of the output nodes according to the voltage between the two output nodes; each PMOS in the self-feedback circuit is connected between one PMOS and the VSS of the input circuit, and the current conduction of the PMOS is controlled by one output node so as to cut off one NMOS in the input circuit. According to the self-feedback upper cross-coupling sensitive amplifier circuit and the control method thereof disclosed by the invention, the offset voltage and power consumption of the sensitive amplifier circuit can be reduced.

The invention relates to the technical field of electric leakage protection devices, in particular to an electric leakage protection device and method for a low-voltage power distribution cabinet, and the device comprises a power distribution cabinet structure, a display screen, a voltmeter, a control cabinet, a first control machine seat, a second control machine seat, and a first insulation protection frame. A display screen and a voltmeter are installed on the control cabinet and used for displaying the state of the power distribution cabinet structure, the control cabinet is further provided with a first control machine base and a second control machine base which are used for automatic monitoring processing of the power distribution cabinet structure, and the rear end of the power distribution cabinet structure is electrically connected with a disconnection processing structure. The disconnection processing structure conducts current and actively disconnects a circuit at the same time, and a first insulation protection frame and a second insulation protection frame are arranged on the disconnection processing structure and cover the disconnection processing structure in an insulation mode. Through the arrangement of the structure, leakage protection work is facilitated.

The utility model relates to the technical field of electronic device manufacturing, conductive connection and the like, and provides a conductive slip ring take-up device which comprises a wire connecting terminal and an elastic sheet connecting terminal. A conductive coil of the wire connecting terminal is arranged on one side of the insulating inner shell, and a conductive wire is installed on the other side of the insulating inner shell and connected with the conductive coil. The conductive elastic sheet of the elastic sheet connecting terminal is arranged on the insulating outer shell, the insulating outer shell is rotatably connected with the conductive coil fixing side of the insulating inner shell, the conductive elastic sheet comprises a coil elastic contact head, and the coil elastic contact head is in contact with the conductive coil. According to the conductive slip ring take-up device, a PIN seat does not need to be welded on the PCB, and an elastic piece does not need to be welded on the PIN seat to be in contact with an electroplated layer on the PCB for conduction, so that the assembly of the device is simplified, the use of a PCB electroplating process is avoided, the environmental protection property and the efficiency of manufacturing are improved, a powder accumulation short circuit caused by the contact of the elastic piece with the electroplated layer of the PCB is avoided, large-current conduction is supported, and the service life of the device is prolonged. And the safety and the stability of the device are improved.

A high-safety transistor testing system and method with nanosecond-level delay is disclosed, belonging to the field of transistor testing. It enables transistor characteristic testing under arbitrary drain voltage stress values, drain voltage stress durations, and load currents based on nanosecond-level measurement delays, while ensuring the safety of the testing system and personnel. The circuit includes: a switch. S 1, S 2, S 3. Resistance R A , R C Schottky diode D 1, D 2. Power Inductor L ,power supply V DD Control switch S 1. The conduction time can control the high voltage that the subsequent circuit can withstand. V DD Duration; control switch S 2. On-time can control the power inductor L Current value at the end of charging; test switch S From the voltage and current of 3, we can determine the switch. S 3. Switching transient characteristics, on-resistance characteristics, etc. Simulation and experiments show that the measurement delay of switching to the test state after the drain voltage stress ends is on the order of nanoseconds, and there is no situation of "accidental opening of series switch leading to large current conduction", so the circuit safety is higher.

Electrodes configurable for capacitive touch sensing or inductive sensing are disclosed. The electrodes are formed from a plurality of tiled (connected) sense pixels, each sense pixel including two or four conductive elements. The conductive elements within the plurality of sense pixels of an electrode are connected to form conductive pathways within the electrode. These conductive pathways enable each electrode to be configured as a touch electrode for single-ended or differential capacitive touch sensing, or into one or two loops for inductive sensing. In pixels with four conductive elements, two conductive elements are formed with a comb shape for maximizing current conduction during inductive sensing and maximizing capacitive coupling during touch sensing, and two conductive elements are formed as bypasses. In electrodes formed from sense pixels with four conductive elements, each conductive pathway within the electrode is formed as an alternating series of comb-shaped conductive elements and bypasses.

An amplifier circuit includes a low-noise amplifier configured to amplify a radio-frequency signal, a switching circuit coupled between the low-noise amplifier and an antenna connection terminal, and a bias circuit configured to supply a direct-current bias voltage to the low-noise amplifier 11. The switching circuit includes a terminal coupled to the low-noise amplifier and a terminal coupled to the antenna connection terminal, and a transistor including a gate terminal and a p-type first substrate, configured to alternate the connection and disconnection between the terminals and in response to a voltage applied to the gate terminal. The bias circuit, the terminal, and the first substrate are coupled for direct-current conduction.

The invention relates to the technical field of semiconductor device manufacturing, in particular to an FRD process control method with the characteristic that forward conduction voltage drop is positive temperature, and the method comprises the following steps: S1, ring base region process, S2, cut-off ring process, S3, Control process, S4, PT sputtering, S5, Pt kill, S6, metallization, S7, irradiation treatment, S8, back thinning, and S9, back gold process. In particular, through comprehensive application of the implantation dosage of boron ions, the diffusion condition of a platinum layer and electron irradiation, the method can ensure that the FRD has optimized performance that the forward conduction voltage drop is approximate to zero temperature or the positive temperature characteristic; and the forward conduction voltage drop can be kept in a relatively stable range and can also be improved along with the temperature rise, so that the current conduction capability and the thermal stability of the parallel device are improved.

A high-current connection system includes a high-current-conducting bridging part which can be fastened to each of two high-current busbars and by which the distance between the high-current busbars can be current-conductively bridged and with which at least two spaced-apart spherically inwardly domed connection faces are associated, for each high-current busbar, a high-current-conducting compensation element which can be disposed between the bridging part and the associated high-current busbar and which has a spherically outwardly domed compensation face which, when the bridging part is in the fastened state, faces one of the spherically inwardly domed connection faces, and is electrically connected thereto, and for each high-current busbar, at least one fastening element which can be associated with the high-current busbar, and by means of which the bridging part and the associated compensation element can be fastened to the associated high-current busbar and secured against movement relative to the associated high-current busbar.

The wire frame wire conveying mechanism comprises a machine tool base, a machining table is arranged on the front side of the upper end of the machine tool base, a wire conveying control table is arranged on the rear side of the upper end of the machine tool base, an adjusting sliding plate is arranged at the upper end of the wire conveying control table, and a wire conveying rolling shaft is arranged at the upper end of the adjusting sliding plate. A supporting frame is arranged between the machining table and the wire conveying control table, the lower end of the supporting frame is fixedly connected to the upper end of the machine tool base, the tension of a cutting wire is finely adjusted by a tensioning roller through threaded connection of an adjusting screw rod and a sliding frame, it is guaranteed that the tension of the cutting wire is uniform in the machining process, vibration is reduced, wire breaking is avoided, and the machining precision is improved; the motor mechanism is stably and electrically connected with the cutting line through the conduction sliding rod and the conduction rolling wheel, it is ensured that the conduction rolling wheel is tightly attached to the cutting line through the attaching spring, the stability of current conduction can be kept even when the cutting line moves, and the electric spark discharge effect in the machining process is ensured.