885 results about "Sapphire" patented technology

The invention discloses active brazing filler metal for sealing sapphire and kovar alloy and a preparation method of the active brazing filler metal. The active brazing filler metal comprises 25.0 wt%-27.5 wt% of Cu, 1.0 wt%-6.0 wt% of Ti, 1.0 wt%-5.0 wt% of Al, 0.1 wt%-1.0 wt% of B, 0.1 wt%-0.5 wt% of rare earth element RE, RE is one or more of La, Ce, Sc, Pr, Nd and Er, and the balance is Ag. The preparation method comprises the following steps: preparing silver-based pre-alloying powder by adopting a gas atomization method, mixing the alloy powder with additive element powder in a ball milling manner, sintering by utilizing vacuum pressure to obtain an alloy ingot blank, and carrying out rough rolling, intermediate annealing and finish rolling to obtain an active brazing filler metal strip with the thickness of 0.05-0.2 mm. The active brazing filler metal is well matched with the thermal expansion coefficient of sapphire, direct brazing of sapphire and Kovar alloy can be achieved, the brazing temperature is moderate, and a brazed joint is uniform in structure and free of defects such as air holes and cracks.

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention discloses a micron-resolution boron nitride neutron scintillation screen and a preparation method thereof, and the preparation method comprises the following steps: taking an inch-level sapphire single crystal as a substrate, and selecting an aluminum polar surface as a growth surface; fixing the substrate by using a graphite clamp, putting the substrate and the chemical vapor deposition furnace into a chemical vapor deposition furnace, vacuumizing, and heating the furnace body to a reaction temperature by using a graphite heater; then raw material gas and carrier gas N2 are introduced into the furnace, meanwhile, the graphite clamp and the graphite heater are decomposed at high temperature so as to provide a proper amount of carbon source, and the gas is mixed and reacts to deposit a crystalline boron nitride film on the substrate; and soaking with alcohol to separate the boron nitride film from the substrate, cutting, and fixing on an aluminum plate to prepare the neutron scintillation screen. The boron nitride film is compact and transparent, shows a strong blue light emission characteristic due to carbon defects, and can be used as a micron-resolution neutron scintillation screen. The micron-resolution boron nitride neutron scintillation screen is successfully realized, and the potential of the micron-resolution boron nitride neutron scintillation screen in the aspect of high-resolution neutron imaging is proved.

The invention relates to a temperature regulation and control method for a sapphire crystal growing furnace, the temperature regulation and control method is applied to the sapphire crystal growing furnace, the sapphire crystal growing furnace comprises a heat preservation structure, the heat preservation structure comprises at least two heat preservation units, and the heat preservation units are annular and stacked to form a cylindrical heat preservation structure; a medium cavity is formed in each heat preservation unit and used for containing a gas heat preservation medium. The number of the circulating units is the same as that of the heat preservation units, the circulating units are in one-to-one correspondence with the heat preservation units, and the circulating units are correspondingly connected with one heat preservation unit; in the first stage of crystal growth, gas heat preservation media with the same content are injected into the medium cavities of all the heat preservation units; in the second crystal growth stage, the content of the gas heat preservation medium in the medium cavity is gradually reduced in the direction from bottom to top. The technical problem that the sapphire crystal growth quality is poor is solved, and the technical effect of improving the sapphire crystal growth quality is achieved.

The invention discloses a plasma surface activation pre-bonding-femtosecond laser connection integrated process, belongs to the technical field of advanced dissimilar material precision connection, and particularly relates to a multi-material interface efficient connection method based on plasma surface activation pre-bonding and femtosecond laser processing. The method is suitable for high-strength and low-thermal-damage heterogeneous bonding of transparent materials (such as glass, quartz and sapphire) and transparent materials or metal materials (such as titanium alloy, stainless steel and invar alloy). According to the method, interface atomic-scale cleaning and chemical activity regulation and control are achieved through plasma activation, interface connection of the two materials is induced by combining the femtosecond laser ultrafast nonlinear effect, and the bottlenecks that in a traditional connection technology, optical contact depends on a mechanical clamp, and heat input is uncontrollable are broken through; and an innovative solution is provided for cross-material interface functional manufacturing in the fields of photoelectric device packaging, optical-electronic integrated systems and the like.

The invention relates to a preparation method and system for an atomic gas chamber for sapphire coating, and the preparation method comprises the steps: S1, placing a cleaned atomic gas chamber on a heating base station of a reaction chamber, and filling the reaction chamber with replacement gas to discharge residual gas in the reaction chamber; s2, filling aluminum source gas into the reaction chamber, and carrying out chemical adsorption on the wall surface of the atomic gas chamber to form a first film layer; s3, filling replacement gas into the reaction chamber to discharge residual aluminum source gas in the reaction chamber; s4, filling oxide gas into the reaction chamber to oxidize the first film layer and convert the first film layer into an aluminum oxide film layer; s5, filling replacement gas into the reaction chamber to discharge residual oxide gas in the reaction chamber; and S6, repeating the steps S2 to S5 to form a preset number of aluminum oxide film layers with a preset thickness on the wall surface of the atomic gas chamber so as to form the atomic gas chamber with the sapphire coating film. The anti-shielding capability of the alkali metal atomic gas chamber can be enhanced, and the electromagnetic wave precision measurement performance of the atomic gas chamber is improved.

The invention relates to the field of architectural ceramics, and discloses a sapphire effect dry particle, a ceramic tile with a sapphire imitation effect and a preparation method of the ceramic tile. The sapphire effect dry granules comprise blue dry granules and transparent dry granules, wherein the blue dry granules are prepared from the following raw materials: 1.5 to 3.5 parts of superfine tin dioxide, 15 to 19.5 parts of cobalt oxide, 4.5 to 7.5 parts of titanium oxide, 8 to 14 parts of zinc oxide, 32 to 43 parts of calcined aluminum oxide, 8 to 13 parts of quartz, 10 to 16 parts of potassium feldspar and 2.5 to 4.5 parts of boric acid; the transparent dry particles comprise the following raw materials in parts by weight: 8-15 parts of zinc oxide, 5-10 parts of aluminum oxide, 24-28 parts of quartz, 1-2.5 parts of nano silicon nitride and 7-11 parts of cryolite. By mixing the two dry granules, the frit dry granules which have a three-dimensional effect and an ice crack texture and imitate the texture of sapphire crystals can be prepared. The ceramic tile with the sapphire-like effect can be prepared by adopting the dry particles with the sapphire effect.

The invention discloses a distributed fluorescence temperature measurement method based on 45-degree inclined gratings, and relates to the field of temperature monitoring under high-temperature conditions of engine turbine blades and the like. 45-degree inclined grating strings are designed and manufactured, the outer sides of the 45-degree inclined gratings are coated with fluorescent materials, and the fluorescent materials are made to emit light through ultraviolet pulse excitation light; the fluorescence returns to the optical fiber through the 45-degree inclined grating, the fluorescence lifetime is measured, temperature monitoring is achieved according to the relation between the fluorescence lifetime and the temperature, the detection position is calculated through the pulse light return time, and temperature distribution of different positions is obtained. According to the distributed fluorescence temperature measurement method based on the 45-degree inclined grating, the measurement precision and the signal processing capacity are improved through a time correlation single photon counting method, the grating can be inscribed on a sapphire optical fiber, and the method is suitable for temperature monitoring in the high-temperature field of engine turbine blades and the like; and meanwhile, the device has a multi-point temperature measurement effect with high precision and strong high-temperature adaptability, and is of great significance to high-temperature environment monitoring.

The invention relates to the technical field of brazing, discloses a sapphire light window and metal packaging brazing device and method, and solves the problems that the acting force among a metal cavity, a sapphire light window and a welding flux is inconvenient to adjust according to actual requirements, and the application range is relatively small, the sapphire light window and metal packaging brazing device comprises a supporting box, and a plurality of pressing discs are arranged above the supporting box; a supporting seat is arranged below the pressing disc, the supporting seat and the supporting box are fixedly connected through a plurality of supporting columns, a containing groove matched with the pressing disc is formed in the top of the supporting seat, a first through hole is formed in the inner wall of the bottom of the containing groove, and a first rotating shaft rotationally connected penetrates through the supporting box; according to actual requirements, the pressing force of the pressing disc can be adjusted through the damping pressing adjusting assembly, then the acting force among the metal cavity, the sapphire light window and the welding flux is controlled through the pressing disc, packaging brazing can be conducted on multiple sets of sapphire light windows and metal, the application range is widened, and the brazing efficiency is improved.

The invention discloses a manufacturing method of a Micro LED matrix headlamp, and belongs to the technical field of semiconductor processing technologies. Eutectic bonding is carried out on a device of a sapphire / silicon substrate GaN epitaxial wafer-ITO film-metal layer and a silicon-based CMOS-metal layer structure, then a Mesa table top of a periodic island-shaped structure is manufactured, an LED light-emitting surface is manufactured after a SiO2 layer is grown, then a retaining wall structure is manufactured on the periphery of the LED light-emitting surface, finally, a mixture of fluorescent powder and silica gel is integrally molded on the surface of the device, and the LED light-emitting surface is manufactured. And finally, the manufacturing of the Micro LED matrix headlamp is completed. In a traditional matrix headlamp, light between adjacent pixels can be laterally conducted through a fluorescent powder adhesive layer, so that when the headlamp is used, especially when two vehicles meet face to face, the corresponding pixels cannot be closed in a targeted mode, and therefore the safety problem is caused. In addition, lateral conduction may affect light extraction, thereby losing light efficiency. The problems are solved by manufacturing the retaining wall structure.

The invention discloses a follow-up PIV boundary layer flow field test system and test method based on electrolytic hydrogen bubbles. The follow-up PIV boundary layer flow field test system comprises an integrated optical measurement module and a tracer particle generation module, the optical measurement module is arranged in the UUV and comprises a laser transmitter assembly, a sapphire prism and two imaging cameras which are symmetrically arranged, and laser sheet light forms a sheet light area on the outer surface of the UUV after being refracted by the sapphire prism; the tracer particle generation module comprises a cathode, an anode and a power supply unit, the cathode is a platinum wire array composed of a plurality of platinum wires arranged in the axial direction of the UUV, and the platinum wires are located at different heights away from the wall face of the UUV; the power supply unit selectively electrifies the platinum wire, independently adjusts the voltage, controls the number and frequency of generated hydrogen bubbles, and achieves the synchronous measurement of flow field information at different thickness positions of a boundary layer. According to the invention, boundary layer flow field in-situ follow-up measurement and synchronous fine measurement of different thickness positions under the condition of not changing the UUV shape are realized, and the device has the advantages of high integration level, small flow field disturbance, high measurement efficiency and the like.

The utility model provides a cooling base and a cooling station for a wafer, which are applied to the field of semiconductor manufacturing, the cooling base comprises a cooling base main body, a heat conduction film and heat conduction points, and the heat conduction points are uniformly arranged on the cooling base main body; sapphire is embedded in the heat conduction points and used for conducting heat, and a groove facilitating grabbing is further formed in the edge of the upper surface of the cooling base body. The cooling station comprises a cooling base, a liquid cooling channel and a nitrogen air compression device, and the liquid cooling channel is arranged on the lower surface of a main body of the cooling base; the nitrogen air compression device is arranged around the cooling base to form a nitrogen protection layer; compared with the prior art, the cooling base and the cooling station have the advantages that the cooling effect of the wafer is more uniform, and the wafer is convenient to grab so as to be convenient to mount and dismount.

The utility model relates to a 4K fluorescent endoscope optical system, which comprises an objective lens system, a relay lens system and an eyepiece system which are sequentially arranged along the light propagation direction, and is characterized in that the objective lens system is of a reverse long-distance structure; the system comprises a sapphire protection lens, a negative focal power lens, a prism or a steering prism, a positive focal power plano-convex cemented lens, a positive focal power triple cemented lens and a first positive focal power double cemented lens which are arranged along a light propagation direction, the relay lens system comprises n relay lens groups, and each relay lens group is of a double telecentric structure. And the eyepiece system is arranged in the light transmission direction and is formed by symmetrically arranging two doublet rod lenses, n is an odd number, the eyepiece system is of an object space telecentric structure, and the eyepiece system comprises a second positive-focal-power doublet lens, a positive-focal-power lens and a sapphire lens which are glued into a whole in the light transmission direction. The structure of an optical system can be simplified, production and processing cost can be reduced, and 4K ultra-high-definition fluorescent laparoscopic imaging can be realized at the same time.

The invention belongs to the technical field of high-temperature flow field velocity testing, and discloses a PIV (particle image velocimetry) endoscopic protection device for measuring a high-temperature airflow velocity field, which is suitable for measuring three-dimensional velocity field distribution in a turbine channel, between stages and at an inlet and an outlet of a turbine in a high-temperature and high-speed airflow environment. The device is characterized by comprising a shell, an inner wall, a sapphire glass tube, a partition plate, a light guide window, a water inlet channel, a water outlet channel, an optical element, a mounting seat and a cavity. The shell, the inner wall and the sapphire glass tube are coaxially sleeved and respectively form two-stage interlayers; the space between the shell and the inner wall is divided into an n-shaped water inlet channel and an n-shaped water outlet channel through a partition plate, circulating flowing of cooling water is achieved, and an endoscope optical assembly and a sapphire glass tube are efficiently cooled. Light guide windows are formed in the side wall of the shell from top to bottom in an equal-diameter and equal-interval mode, and an optical element capable of moving up and down in the glass tube in the axial direction is combined, so that the narrow measurement section in the turbine can be accurately measured; according to the structure, the temperature near the sapphire glass tube can be controlled below 500K under the extreme condition that the external environment temperature is up to 2000K, high temperature is effectively isolated, thermal stress concentration is relieved, and stable signal transmission and imaging measurement are ensured. Compared with the prior art, the endoscope probe can accurately reach a measurement area which is difficult to cover by a traditional light source, and efficient and stable measurement of a high-temperature, complex and narrow space flow field is achieved.

The invention belongs to the technical field of self-healing performance evaluation of self-healing hole sealing materials, and particularly discloses a device and a method for evaluating a crack repairing effect of a self-healing hole sealing material. Comprising a constant-temperature and constant-humidity chamber, a curing box, a sucking pump, a one-way valve, a flow meter, a metal container, a pressure sensor, a crack width gauge, a computer, a constant-temperature and constant-humidity chamber power switch, a temperature display, a temperature controller, a humidity display, a humidity controller, a confining pressure simulation device, a sapphire glass window, a pressure reducing valve, a gas cylinder, a plug and a self-repairing hole sealing material after crack prefabrication. Compared with the prior art, the maintenance environment of the self-repairing hole sealing material can be controlled, the crack repairing effect of the self-repairing hole sealing material in a stress state can be simulated by applying confining pressure, and the test efficiency and accuracy of a crack repairing experiment are improved.

The invention relates to the oil and gas production industry and is intended for studying the physical properties of reservoir fluids using PVT analysis. Proposed is a device for carrying out thermodynamic studies which comprises: a cell body (26), a piston (20), sealing elements (2, 6, 23), a mixing device, a pressure sensor (7), a temperature sensor, an inlet valve (9), an outlet valve (10), a measuring device, a mechanical actuator of the piston, an electric heater (11), a cooling device (12), a system for tilting the cell body, and a control unit. The cell body comprises a mount consisting of a mount body (1) and a viewing window (3) with a sapphire pane. The result is an increase in the reliability, quality and accuracy of measurements of a sample.

The invention relates to the field of crystal growth, in particular to a sapphire crystal heating device and method.The sapphire crystal heating device is suitable for a sapphire furnace, the sapphire furnace comprises a furnace body and a crucible, and the crucible is located in the furnace body; the sapphire crystal heating device comprises a heat preservation unit located between the furnace body and the crucible, a heat preservation cavity is formed in the heat preservation unit, the crucible is covered with the heat preservation unit, and the heat preservation unit is used for conducting heat preservation on the environment in the heat preservation cavity; a through hole allowing the lifting rod to enter the heat preservation cavity is formed in the top face of the heat preservation unit, and the diameter of the through hole is 2-5 times that of the lifting rod; the heating unit is located in the heat preservation cavity, and the heating unit is used for heating the raw materials in the crucible; and the temperature monitoring unit is used for penetrating through the through hole to measure the temperature of the raw material in the crucible. By designing the diameter of the through hole, the temperature measurement visual angle and heat control are considered, and the technical effect of improving the sapphire crystal growth quality is achieved.

A method of exciting light emission includes using a single mode sapphire optical waveguide as a gain medium, and a sapphire optic including an optical gain medium, the optical gain medium including the single mode sapphire optical waveguide.

The invention discloses a multilayer composite patterned substrate and a preparation method and application thereof, and relates to the technical field of substrate material preparation. The invention provides a multi-layer composite patterned substrate which comprises a sapphire bottom layer, a periodic pattern layer and a reflecting material layer. The periodic pattern layer is arranged on the surface of the sapphire bottom layer; the periodic pattern layer is provided with a window area, and the window area is a non-coverage area of the periodic pattern layer on the sapphire bottom layer; a reflecting material layer is arranged on the surface of a non-window area of the periodic pattern layer; and an epitaxial layer can be additionally arranged between the sapphire bottom layer and the periodic pattern layer. According to the invention, the surface emergent light of the LED device is obviously increased, so that the external quantum efficiency is improved, and meanwhile, the problem that the GaN growth is influenced by a reflecting layer material (mainly a metal reflecting mirror material) is solved.

The utility model relates to the technical field of kyanite crystal processing devices, in particular to a tumbling mill for sapphire crystal processing, which comprises two supporting legs, a fixed block I, a fixed block II, a motor, a gear I, a rotating rod, an inner tumbling barrel and a rotating rod, the first gear is fixedly connected with the output end of the motor and located above the first fixing block, the rotating rod is fixedly connected with the first gear, one end of the inner barreling barrel is fixedly connected with the rotating rod, the rotating rod is rotationally connected with the inner barreling barrel, the motor is started to drive the first gear to rotate, and the first gear drives the inner barreling barrel to rotate in the forward direction through the rotating rod. And meanwhile, the first gear drives the third gear to rotate through the second gear, and the third gear drives the outer tumbling barrel to rotate reversely through the connecting pipe, so that the grinding quality and efficiency can be improved, and the problem that the grinding quality is low due to the fact that only the tumbling barrel of the tumbling mill for sapphire crystal machining impacts crystals is solved.

A vehicle display device includes a housing, a TFT that is accommodated in the housing, a mirror that is accommodated in the housing and reflects display light output from the TFT toward a windshield of a vehicle, a sapphire glass with a transparent plate shape that is disposed in contact with a display surface of the TFT, a lower case that functions as a heat dissipation part that dissipates heat, and a heat pipe that has one end connected to an edge part of the sapphire glass and the other end connected to the lower case, and conducts heat of the sapphire glass to the lower case.

The invention belongs to the technical field of grinding materials and grinding tools, and particularly relates to a diamond electroplated grinding wheel directionally arranged in a magnetic field and a preparation method and application thereof. Firstly, electroplating liquid is added into an electroplating bath, then 30%-40% of magnetic diamond abrasive materials are added into the electroplating liquid, directional magnetic sanding is carried out with the grinding wheel base body A as a cathode and a nickel plate as an anode, the magnetic field intensity is controlled to be 0.1-1 T, the cathode current density is controlled to be 0.4 A / dm < 2 >-0.6 A / dm < 2 >, the electroplating time is 10-20 min, and a grinding wheel base body B is obtained; removing floating sand from the grinding wheel base body B to obtain a grinding wheel base body C; and the grinding wheel base body C is thickened to obtain a grinding wheel base body D, and the grinding wheel base body D is modified to obtain the grinding wheel. The grinding rate of the manufactured grinding wheel is reduced by 10%-25%, the service life is prolonged by 30%-50%, the machined surface roughness (Ra) can reach 0.3 micrometer or below, and the machined surface precision is reduced by 10%-25%. The grinding wheel is applied to nanoscale grinding of optical glass, sapphire and silicon carbide wafers and forming machining of turbine blade mortises and ceramic matrix composites, and the precision and roughness of the grinding wheel can be effectively guaranteed.

The invention discloses an in-situ observation sliding electric contact frictional wear test bed and a test method. A load assembly, an observation assembly and a transposition assembly of the test bed are fixedly mounted on an air floating type vibration isolation platform; the load assembly is used for realizing stable loading of a force load and an electric load during a frictional wear test and realizing adjustment of the height position of the sample during frictional wear observation; the observation assembly is used for measuring and recording the surface morphology of the contact area of the friction pair; the transposition assembly is used for rotating the friction disc to a position where the friction disc rubs with a sample during a friction wear test, and rotating the sapphire disc to an observation position during friction wear observation; the control unit is used for controlling the load assembly, the observation assembly and the transposition assembly. The test bed can perform in-situ observation on the morphology and the abrasion evolution process of the contact area, and the change rule of physical quantities such as the actual contact area and the abrasion loss of the friction pair along with time is obtained.

The utility model discloses an IPL laser hair removal instrument with a sapphire ice compress function, which relates to the technical field of hair removal instruments and comprises a machine body, an end shell is fixed at the front end of the machine body, a tail shell is fixed at the tail end of the machine body, a sapphire ice compress laser is arranged in the machine body, a charging power supply is fixed in the machine body, and a heat dissipation fin plate is fixed in the machine body. A control circuit board is fixed in the machine body, an air blower is fixed in the machine body, heat dissipation channels are formed in the machine body, the end shell and the tail shell, the heat dissipation channels and the air blower are arranged in a matched and communicated mode, and the surface air flowing effect of the charging power source, the heat dissipation fins and the control circuit board is improved through the heat dissipation channels; the IPL laser hair removal instrument with the sapphire ice compress function is provided; by arranging the heat dissipation channel, traditional single-channel heat dissipation is changed, the surface heat dissipation efficiency of internal sapphire and corresponding electronic elements is improved, the internal air flowing efficiency is improved through cooperation of the air blower and the heat dissipation channel, and then the internal air heat dissipation effect is improved.

The invention discloses a cleaning control system and method for a sapphire double-polished wafer, and belongs to the field of cleaning control of the sapphire double-polished wafer. Cleaning data are acquired, images of the sapphire double-polished wafer and data before and after cleaning are acquired, the images are processed, and a cleaning effect evaluation model is constructed; scratch related parameters and the number of surface particles before and after cleaning are imported into a cleaning effect evaluation model to be evaluated, a brush abrasion degree evaluation model is constructed, process parameters of the process of cleaning the sapphire double-polished sheet by the brush are imported into the brush abrasion degree evaluation model to evaluate the brush abrasion degree, and a brush remaining life evaluation model is constructed. The brush abrasion loss, the brush cleaning effect and the brush thickness are imported into the brush residual life evaluation model to evaluate the brush residual life, the brush abrasion condition is evaluated by monitoring the cleaning effect in real time, the brush life is predicted based on the abrasion model, and the negative influence of the brush on the double-polishing-piece cleaning process is reduced.

The invention belongs to the technical field of welding, and particularly relates to sapphire and sapphire clamping type welding equipment and method. Comprising a welding table, and a welding arm is installed on the side face of the welding table; a welding laser is mounted at the end point of the welding arm and is used for welding the clamped sapphire diaphragm; an execution locking piece is arranged on the welding table, and the execution locking piece is used for arranging the two sapphire diaphragms in a butt joint mode; the execution locking piece comprises two locking square blocks, and the two locking square blocks are symmetrically arranged on the two sides of the top face of the welding table. The opposite faces of the two locking square blocks are each provided with a special-shaped clamp. The locking square block is provided with a moving clamping assembly used for assembling and disassembling the special-shaped clamp. By moving the clamping assembly, special-shaped clamps in different shapes can be replaced without tools, operation is convenient and fast, the limitation of the equipment in use is reduced, and the welding efficiency of the equipment is improved.

The invention relates to a sapphire and titanium sapphire composite laser crystal which is composed of sapphire and a titanium sapphire crystal. The doping concentration of the titanium ions is 0-0.8%. And growing by a Bridgman-Stockbarger method. The preparation method has the advantages that 1) the high-quality and large-size composite laser crystal can be obtained through one-time crystal growth, the crystal interface is stable, high power density can be borne, and the crystal is an excellent gain medium of a high-power laser; and 2) the Bridgman-Stockbarger method is utilized to grow the composite crystal, so that the operation steps are simplified, a plurality of crystal surface treatment procedures are omitted, the production cost is reduced, and the possibility of generating defects such as color center, wrappage and degumming in the crystal compounding process can be avoided.

The invention provides a high-power blue-light solid laser for urinary surgery, which comprises a pumping source, a pumping cavity, an annular water cooling structure, a titanium-doped sapphire slice crystal, an end mirror, a diamond crystal, a focusing system, a frequency doubling crystal, a coupling system and an optical fiber, the pumping cavity is used for reflecting 532nm pumping laser so as to focus the 532nm pumping laser on the titanium-doped sapphire slice crystal; the titanium-doped sapphire slice crystal generates 803nm laser based on 532nm pumping laser; the diamond crystal enables 803nm laser to form 900nm laser through Raman frequency shift; the focusing system is used for focusing the 900nm laser into the frequency doubling crystal so as to convert the 900nm laser into 450nm blue laser through nonlinear frequency conversion; the coupling system couples the 450nm blue laser into the optical fiber to form a stable high-power 450nm blue laser light source which can be applied to urinary surgery. The blue light laser is simple in structure, the problems that an existing blue light laser is low in output power and poor in light beam quality are solved, and operation safety and efficiency are improved.

The utility model discloses a supporting device for a tungsten cylinder crucible of a sapphire crystal growth furnace, relates to the technical field of spar forming equipment, and aims to provide the supporting device for the tungsten cylinder crucible of the sapphire crystal growth furnace, which can lift the crucible and is convenient for taking, placing, feeding and discharging the crucible, and has the technical key points that the supporting device comprises a supporting frame, and a furnace body is arranged on the supporting frame; a cover plate is arranged at the top of the furnace body, a vacuumizing pipe is arranged on the side face of the furnace body, a lifting component is arranged on the supporting frame, the top end of the lifting component extends into the furnace body, and a movable plate is arranged at the top end of the lifting component. The threaded telescopic rod jacks upwards and drives the movable plate to move upwards, and the movable plate bears the tungsten crucible and drives the tungsten crucible to jack upwards, so that the tungsten crucible moves to the position of the opening in the upper portion of the furnace body, the purpose of jacking the tungsten crucible is achieved, and taking, placing, feeding and discharging of the tungsten crucible are facilitated.

A method for manufacturing a fused metal sight window that melts the metal of the frame around the window, instead of the traditional method of melting the window into the frame. Since most of the superior optical transparent materials (such as fused silica, sapphire, YAG, ALON, diamond, fused quartz and magnesium fluoride) have a melting point higher than most metals, it was not previously possible to create fused metal sight windows with these materials. By melting the frame onto the window, many new combinations of metals and optical materials may be used while retaining the strength of the sight window that results from fusing the metal and the window.