330 results about "Sapphire" patented technology

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention relates to a preparation method and system for an atomic gas chamber for sapphire coating, and the preparation method comprises the steps: S1, placing a cleaned atomic gas chamber on a heating base station of a reaction chamber, and filling the reaction chamber with replacement gas to discharge residual gas in the reaction chamber; s2, filling aluminum source gas into the reaction chamber, and carrying out chemical adsorption on the wall surface of the atomic gas chamber to form a first film layer; s3, filling replacement gas into the reaction chamber to discharge residual aluminum source gas in the reaction chamber; s4, filling oxide gas into the reaction chamber to oxidize the first film layer and convert the first film layer into an aluminum oxide film layer; s5, filling replacement gas into the reaction chamber to discharge residual oxide gas in the reaction chamber; and S6, repeating the steps S2 to S5 to form a preset number of aluminum oxide film layers with a preset thickness on the wall surface of the atomic gas chamber so as to form the atomic gas chamber with the sapphire coating film. The anti-shielding capability of the alkali metal atomic gas chamber can be enhanced, and the electromagnetic wave precision measurement performance of the atomic gas chamber is improved.

The invention discloses a follow-up PIV boundary layer flow field test system and test method based on electrolytic hydrogen bubbles. The follow-up PIV boundary layer flow field test system comprises an integrated optical measurement module and a tracer particle generation module, the optical measurement module is arranged in the UUV and comprises a laser transmitter assembly, a sapphire prism and two imaging cameras which are symmetrically arranged, and laser sheet light forms a sheet light area on the outer surface of the UUV after being refracted by the sapphire prism; the tracer particle generation module comprises a cathode, an anode and a power supply unit, the cathode is a platinum wire array composed of a plurality of platinum wires arranged in the axial direction of the UUV, and the platinum wires are located at different heights away from the wall face of the UUV; the power supply unit selectively electrifies the platinum wire, independently adjusts the voltage, controls the number and frequency of generated hydrogen bubbles, and achieves the synchronous measurement of flow field information at different thickness positions of a boundary layer. According to the invention, boundary layer flow field in-situ follow-up measurement and synchronous fine measurement of different thickness positions under the condition of not changing the UUV shape are realized, and the device has the advantages of high integration level, small flow field disturbance, high measurement efficiency and the like.

The utility model discloses an IPL laser hair removal instrument with a sapphire ice compress function, which relates to the technical field of hair removal instruments and comprises a machine body, an end shell is fixed at the front end of the machine body, a tail shell is fixed at the tail end of the machine body, a sapphire ice compress laser is arranged in the machine body, a charging power supply is fixed in the machine body, and a heat dissipation fin plate is fixed in the machine body. A control circuit board is fixed in the machine body, an air blower is fixed in the machine body, heat dissipation channels are formed in the machine body, the end shell and the tail shell, the heat dissipation channels and the air blower are arranged in a matched and communicated mode, and the surface air flowing effect of the charging power source, the heat dissipation fins and the control circuit board is improved through the heat dissipation channels; the IPL laser hair removal instrument with the sapphire ice compress function is provided; by arranging the heat dissipation channel, traditional single-channel heat dissipation is changed, the surface heat dissipation efficiency of internal sapphire and corresponding electronic elements is improved, the internal air flowing efficiency is improved through cooperation of the air blower and the heat dissipation channel, and then the internal air heat dissipation effect is improved.

The invention discloses a light-emitting diode chip for improving the polarization effect of a quantum well light-emitting layer and a preparation method of the light-emitting diode chip. Comprising a sapphire patterned substrate, a buffer layer, a defect barrier layer, an N-type gallium nitride layer, a current expansion layer, a stress release layer, a quantum well light-emitting layer, a polarization buffer layer, a P-type electron barrier layer, a P-type gallium nitride layer, a transparent conductive layer, an electrode layer and a protective layer which are sequentially arranged from bottom to top. The polarization buffer layer is arranged between the quantum well light-emitting layer and the P-type electron blocking layer, buffers energy level abrupt change, and improves the polarization effect. A composite structure of an In < x > Ga < 1-x > N / GaN superlattice and a GaN / Al < y > Ga < 1-y > N superlattice is inserted between the multi-quantum well layer and the electron blocking layer, mutation of energy level is buffered by adjusting gradient doping of In and Al, the polarization effect in quantum wells caused by high potential barriers of the electron blocking layer is effectively improved, and the luminous efficiency of the diode is further improved.

The invention provides a GIS visible window preparation method, device and equipment and a storage medium, and the method comprises the following steps: firstly carrying out surface metallization treatment on sapphire transparent ceramic by using Ag-Cu-Ti soldering paste under vacuum, raising the temperature to a first high temperature, carrying out heat preservation, and then carrying out furnace cooling; then the kovar alloy and the sapphire are welded with the same soldering paste under the same conditions; and then the Al-Si-Mg brazing filler metal is used for welding the aluminum alloy and the kovar alloy under vacuum, the temperature is increased to a second low temperature lower than the first high temperature, heat preservation is conducted, and then furnace cooling is conducted. The SF6 leakage resistant sealing interface is formed through the steps. According to the method, the visual window is integrally prepared, the interior of the GIS can be directly observed, fault judgment accuracy and operation and maintenance efficiency are improved, power failure time is shortened, and stable operation of equipment is guaranteed.

The utility model relates to a dual-channel optical filter based on a three-rectangular cavity edge coupling waveguide. The dual-channel optical filter comprises a silicon substrate, a sapphire layer, a graphene nano-strip waveguide, a first graphene rectangular resonant cavity, a second graphene rectangular resonant cavity and a third graphene rectangular resonant cavity, the sapphire layer is arranged above the silicon substrate; a graphene nano-strip waveguide, a first graphene rectangular resonant cavity, a second graphene rectangular resonant cavity and a third graphene rectangular resonant cavity are arranged on the upper surface of the sapphire layer; the first graphene rectangular resonant cavity and the third graphene rectangular resonant cavity are connected in series and arranged on one side of the graphene nano-strip waveguide, and the second graphene rectangular resonant cavity is arranged on the other side of the graphene nano-strip waveguide. According to the utility model, the problems of narrow bandwidth and poor filtering effect of an optical filter with a graphene structure are solved; the dual-channel optical filter which is small in size, wide in bandwidth, excellent in filtering effect, dynamically tunable and easy to integrate is realized in an infrared band.

The utility model relates to the technical field of optical part machining, and discloses a sapphire special-shaped part concave-convex surface arc light chamfering machine which comprises an operation table, and a lifting seat, a servo motor, an adjusting arm and other components are arranged on the operation table. And switching of the machining angle and position of the sapphire special-shaped part can be achieved through the lifting base, the servo motor and the adjusting arm. The positioning piece is matched with the limiting piece, the special-shaped piece can be accurately positioned and fixed, the clamping wing and the correcting plate of the limiting piece clamp and fix the special-shaped piece under the action of the gear, and position deviation is prevented. The operation table is correspondingly provided with a concave grinding tool, a convex grinding tool and a rotating motor. According to the utility model, the problems that the stress is non-uniform when a handheld workpiece is chamfered, the manual repeated debugging operation is tedious, and the position deviation is easy to occur when a special-shaped workpiece is clamped in a one-way manner are solved, and the machining precision and efficiency are improved.

The utility model discloses a tungsten-copper alloy heater for sapphire crystal growth, and relates to the technical field of sapphire crystal growth equipment. The heating device comprises a mounting seat, a supporting frame is fixedly connected to the bottom of the mounting seat, a heating rod is arranged at the bottom of the mounting seat, a tungsten-copper alloy electrode is arranged at the top of the mounting seat, a clamping device is arranged at the top of the mounting seat, the clamping device comprises a sliding groove, the sliding groove is formed in the top of the mounting seat, and the tungsten-copper alloy electrode is arranged in the sliding groove. The inner wall of the sliding groove is fixedly connected with a mounting block. The birdcage heater made of the tungsten copper alloy is not prone to deformation, meanwhile, a good temperature gradient and a uniform and stable temperature field are provided for sapphire crystal growth, stable crystal growth is achieved, meanwhile, the service life of the heater is prolonged, equipment damage caused by improper operation can be reduced, and the service life of the heater is prolonged. And the maintenance cost caused by frequent misoperation is reduced.

The utility model provides an automatic feeding device of a bar digging machine, which comprises a hanger plate and a bar digging machine body arranged below the hanger plate, and further comprises a flexible feeding component arranged between the hanger plate and the bar digging machine body, the flexible feeding assembly comprises a mounting plate mounted above the bar digging machine body, a set of sliding columns arranged above the mounting plate, piston cylinders slidably connected to the outer portions of the sliding columns, and a pushing structure arranged below the hanging plate and used for enabling the sliding columns to push the bar digging machine body to conduct flexible feeding. The guide assemblies are arranged on the left side and the right side of the bar digging machine body. By arranging the flexible feeding assembly, the bar digging machine body can be pushed to feed through the pressure of gas, when the bar digging machine body makes contact with a sapphire material, due to the fact that the gas has compressibility, flexible buffering can be formed in the piston barrel, the bar digging machine body is not subjected to rigid impact during feeding, and it is avoided that impact force is generated to damage the sapphire material; the appearance quality of the sapphire product is further improved.

The utility model discloses a sapphire cylindrical grinding clamping device which comprises a base, two pushing mechanisms are symmetrically arranged at the two ends of the base, a rotating mechanism is correspondingly arranged at the moving end of one pushing mechanism, the two rotating mechanisms are coaxially arranged, a supporting frame is coaxially arranged on each rotating mechanism, and the supporting frame is arranged on the base. A clamping sleeve is installed on one supporting frame in a matched mode, an ejector pin is installed on the other supporting frame in a matched mode, and the clamping sleeve is matched with the ejector pin. According to the utility model, sapphire bars can be always positioned on the same axis, and the processing accuracy is improved.

The invention relates to the technical field of wireless communication, and provides a surface acoustic wave device which comprises a supporting substrate, a piezoelectric substrate and an interdigital transducer. The supporting substrate is made of a sapphire material; the interdigital transducer comprises a first interdigital electrode, a second interdigital electrode, a first bus bar and a second bus bar, wherein the first bus bar and the second bus bar are oppositely arranged. The first interdigital electrode is separated from the second interdigital electrode and the second bus bar, and the first interdigital electrode and the second interdigital electrode are opposite in electrical polarity; the arrangement direction of the first interdigital electrodes and the second interdigital electrodes is a sound wave propagation direction; wherein the sapphire is r-face sapphire, crystal arrangement of the r-face sapphire is in a regular hexagonal prism shape, the growth axis of the r-face sapphire is perpendicular to the bottom face of the r-face sapphire, and the [2-1-1] crystal orientation of the r-face sapphire is perpendicular to the orthographic projection of the growth axis on the r face and is parallel to the sound wave propagation direction. The surface acoustic wave device provided by the invention can realize higher frequency, high reliability and higher power.

The invention discloses a growth method for preparing a high-strength sapphire crystal through a kyropoulos method, and belongs to the technical field of artificial crystal growth. The mechanical strength and damage resistance of the sapphire single crystal are remarkably improved by optimizing the kyropoulos growth process. The invention particularly relates to a technology for obtaining a sapphire crystal with high bending strength, high fracture toughness and excellent thermal shock resistance by regulating and controlling thermal field distribution, an interface stress state and a defect evolution behavior in a growth process.

The application relates to a Micro LED panel packaging structure and packaging glue, which comprises a light-emitting chip, a sapphire packaging layer and a glue layer, the sapphire packaging layer is coated on the light-emitting chip, the glue layer is coated on the sapphire packaging layer, diffusion powder is arranged at the contact surface of the glue layer and the sapphire packaging layer, the diffusion powder comprises milky white powder with a foggy surface and transparent powder with a smooth surface. The application uses compounded diffusion powder, which can comprehensively improve the brightness and light scattering effect. When light is emitted and meets the diffusion powder, reflection occurs, the light is scattered, the problem of inconsistent light caused by phase separation is improved, the refractive index of the diffusion powder is larger than that of the base glue, the diffusion powder is arranged at the contact surface of the glue layer and the sapphire packaging layer, part of the diffusion powder is in contact with the sapphire packaging layer, the total reflection angle of light at the contact surface of the diffusion powder and the sapphire packaging layer is larger than that at the contact surface of the base glue and the sapphire packaging layer, more light can be refracted and emitted, and the brightness is improved.

The invention discloses an ultra-low frequency conduction acoustic system based on reverse installation and a sapphire reflection structure, and belongs to the field of audio acoustics, the ultra-low frequency conduction acoustic system comprises a moving coil unit, the sapphire reflection structure and a sound tube, the moving coil unit is reversely installed on the inner side of an earphone surface cover, and a vibrating diaphragm faces the direction away from a sound outlet; sound waves are reflected to the reflecting surface of the stone surface cover of the sapphire reflecting structure through the rear cavity and then are transmitted to the sound outlet through the sound tube; the surface cover of the sapphire reflection structure is of a customized special-shaped structure, is accurately matched with the reflection angle of the rear cavity, and has optical-grade surface smoothness; the moving coil unit is combined with a plurality of moving iron units and static units, and the moving iron units and the static units adopt a forward sound wave conduction mode; the reverse sound wave path is prolonged and reflected by the high-hardness sapphire, and the low-frequency quantity sense is sufficient and distinct in hierarchy; an independent low-frequency sound path can be realized without increasing the volume of the earphone; low frequency and medium-high frequency are physically isolated, and mutual interference is reduced.

The invention relates to AlGaN based on porous AlN growth and a preparation method thereof, and belongs to the technical field of semiconductors. The preparation method comprises the following steps: step 1, providing a sapphire-based AlN substrate; step 2, preparing an alkaline melt solution, completely immersing the substrate into the alkaline melt solution for corrosion, then taking out the substrate, cleaning and drying to obtain a sapphire-based AlN substrate intermediate; corrosion holes are formed in the surface of the AlN layer of the sapphire-based AlN substrate intermediate, and the hole diameter of the corrosion holes is 50-100 nm. 3, after water and oxygen removal treatment is carried out on the sapphire-based AlN substrate intermediate, an AlGaN layer is deposited; the thickness of the AlGaN layer is 1 to 1.5 [mu] m. According to the preparation method, lattice mismatch of AlN and AlGaN is relieved through the lateral epitaxial process in the AlGaN growth process, relaxation stress is achieved, the crystal quality is improved, the surface damage function is reduced, and growth of the thick-film AlGaN with the high quality and the good surface is achieved.

To make it easy to confirm the orientation of the protective window. [Solution] A method for inspecting the surface orientation of the first surface of an optical temperature sensor comprising a cylindrical fiber probe through which an optical fiber is inserted, and a protective window portion made of sapphire and located on the tip side of the fiber probe, wherein the surface of the protective window portion opposite to the optical fiber in the axial direction of the fiber probe is formed as the first surface and the surface on the optical fiber side is formed as the second surface, wherein coaxial incident illumination is shone on the first surface.

The invention relates to the technical field of gas solubility testing, in particular to a gas solubility measuring device and method.The gas solubility measuring device comprises a balance kettle, a pressurizing assembly, a first cylinder, a second cylinder and a first driving mechanism, the balance kettle comprises a mixing barrel, an upper end cover, a lower end cover and a sapphire glass barrel, and the lower end cover is fixedly installed at the lower end of the mixing barrel in a sealed mode; and the upper end of the mixing cylinder is provided with a connecting hole communicating inside and outside. The device is reasonable and compact in structure, the mixing barrel and the sapphire glass barrel can mix tested gas and test liquid, and the first piston rod can be driven to reciprocate left and right in the first cylinder body by arranging the first driving mechanism, so that the tested gas in the pressurizing assembly and the test liquid in the mixing barrel can be quickly dissolved, and the test efficiency is improved. The sapphire glass cylinder is convenient for observation when the tested gas is dissolved and balanced in the test liquid and a gas phase appears, the operation is convenient, and the accuracy of a test result can be improved.

The sapphire refrigerating device based on the metal frame comprises sapphire, the metal frame and a refrigerating sheet, the metal frame comprises an embedding opening, the sapphire is embedded in the embedding opening, the outer edge of the sapphire is tightly attached to the inner edge of the embedding opening, and the refrigerating sheet is arranged on the metal frame. The metal frame comprises a cold conduction part extending outwards, and the cold end face of the refrigeration sheet is attached to the cold conduction part. According to the utility model, the heat transfer efficiency between the refrigeration sheet and the sapphire can be improved, and the structure is more compact.

1.The name of the design product: bedstead (6526 sapphire). 2.The use of the design product: for supporting mattress. 3.The design points of the design product: in shape. 4.The picture or photo that can best show the design points: perspective view. 5.The right view is symmetrical with the left view, so the right view is omitted; the design content of the top view has been expressed in the perspective view, so the top view is omitted; the bottom surface of the design product is not easy to see or cannot be seen during use, so the bottom view is omitted.

The invention discloses a sapphire thermoelectric refrigeration sheet and a manufacturing method thereof, relates to the field of semiconductor refrigeration, and aims to solve the problem that the existing thermoelectric refrigeration sheet cannot give consideration to both lightness, thinness and product strength. The manufacturing method comprises the following steps: cleaning a flow deflector, mounting the flow deflector on a ceramic sheet, and carrying out high-temperature anti-oxidation treatment to obtain a semi-finished ceramic substrate; semiconductor particles are placed at the corresponding positions of the lower ceramic substrate flow deflectors, the upper ceramic substrate covers the lower ceramic substrate flow deflectors, and the TEC is clamped and fixed to obtain a semi-finished product TEC; welding after clamping and fixing, cooling after welding, cleaning, taking out, cutting liquid, and draining; and stripping the ceramic chip of the semi-finished TEC to obtain a thermoelectric refrigeration structure, and bonding the thermoelectric refrigeration structure with sapphire glass. The mounting space is saved to the maximum extent, the heat transfer resistance is reduced to the maximum extent, and meanwhile the structural strength and reliability of components are guaranteed.

The invention discloses a titanium sapphire crystal composite polishing technology integrating chemical mechanical polishing, magneto-rheological polishing and ion beam polishing, and relates to the field of laser crystal ultra-precision machining. According to the method, the technical bottlenecks that the subsurface damage of the titanium sapphire crystal is difficult to control and the surface shape precision and the surface roughness are difficult to consider at the same time due to factors such as high Mohs hardness and doping concentration are solved through a three-stage synergistic process of chemical mechanical polishing pre-shaping, magneto-rheological polishing low-damage surface trimming and ion beam polishing atomic-scale fine trimming. The surface roughness Ra of the titanium sapphire crystal processed through the method is smaller than or equal to 0.1 nm, the surface shape precision PV is smaller than or equal to lambda / 20 (lambda = 632.8 nm), the subsurface damage layer depth is smaller than 5 nm, and the strict requirements of an intense laser system for crystal elements are met.

This invention belongs to the technical field of experimental equipment for oil and gas field development engineering, specifically relating to a visualization device and method for simulating solid phase deposition in the flow of waxy crude oil in a wellbore. This invention connects two or more wellbore simulation units in series to form a wellbore flow simulation system. A coiled section and a sapphire glass visible section are connected in series and placed within a visible temperature control device, enabling the simulation of temperatures at different locations in the wellbore. Furthermore, the sapphire glass visible section can be removed entirely. This invention is simple to operate and can realistically simulate the solid phase deposition behavior of crude oil on the metal wellbore wall. It solves the problems of existing visualization devices being unable to handle high-pressure conditions and accurately reproduce the actual flow environment in the wellbore, and also better addresses the issue of existing devices being unable to achieve in-situ sampling while maintaining the integrity of the wax crystal microstructure.

The invention relates to a functionalized small molecular group water generation patch based on a multi-physical field synergistic effect and a preparation method and application thereof.The patch is composed of a flexible base material and a functional coating coated on the flexible base material, and the surface of the functional coating is covered with a porous protective film; the functional coating is formed by mixing and curing a multi-element nano composite material and a macromolecular adhesive and carrying out polarization treatment; the multi-element nano composite material comprises nano tourmaline, Er: SrTiO3 nanocrystals, Nd2Fe14B magnetic powder, graphene, molybdenum disulfide quantum dots, Pr < 3 + >: sapphire whiskers, Eu (TTA) 3 / TP clusters and PEG brush molecules. Through the synergistic effect of multiple physical fields of piezoelectricity, photoacoustic, magnetism, quantum and the like, common water is efficiently activated into small molecular group negative potential water, external energy source driving is not needed, installation can be convenient, the effect is remarkable and lasting, and the device can be widely applied to the fields of household drinking water, agricultural irrigation, aquaculture, medical care and the like.

The utility model relates to a lifting pin and a lifting pin device with the same, and aims to solve the problem that a lifting pin bracket in the prior art is easy to lose efficacy in a high-temperature and high-fluorine-ion environment. The lifting pin body and the support are combined into a whole and are made of sapphire materials, so that the lifting pin has the advantages of being resistant to high temperature and corrosion, the service life can be remarkably prolonged, and the downtime and the maintenance cost of equipment are reduced.

The invention provides a direct bonding-based differential capacitive pressure sensor and a pressure detection method. The direct bonding-based differential capacitive pressure sensor comprises a metal base, a sapphire diaphragm and a sapphire fixed electrode plate, the sapphire diaphragm is fixedly connected to the metal base through a direct bonding process; the sapphire fixed electrode plate is fixedly connected to the sapphire diaphragm through a direct bonding process, and a capacitance gap with a preset distance is formed between the sapphire fixed electrode plate and the sapphire diaphragm; the sapphire diaphragm and the sapphire fixed electrode plate are respectively provided with a plurality of corresponding electrodes to form a differential capacitor structure; the difference value of the material thermal expansion coefficients of the metal base and the sapphire is smaller than a preset threshold value. The differential capacitive pressure sensor has relatively low sealing stress and relatively small temperature excursion, and the distance control precision between the diaphragm and the fixed electrode plate is ensured, so that the inherent precision of the pressure sensor is improved.

The invention relates to a free-flow electrophoresis cell for purifying and / or separating an initial solution containing a product to be purified and / or separated, comprising - at least one plate X between two adjacent plates Y: X being an electrophoresis plate made of inert material, Y being a sealed plate made of sapphire or alumina Al2O3 containing 99% α-Al2O3, - an electrophoresis chamber comprising s sub-units Ui, s representing an integer from 2 to 5 and i being an integer varying from 1 to s, - a cooling circuit, characterized in that the electrophoresis chamber comprises: - intermediate channels connecting the two successive sub-units.

The application relates to a preparation method and system of a sapphire-coated atom gas chamber, wherein the preparation method comprises the following steps: S1, placing a cleaned atom gas chamber on a heating base of a reaction chamber, and filling displacement gas into the reaction chamber to discharge residual gas therein; S2, filling aluminum source gas into the reaction chamber, and chemically adsorbing on the wall surface of the atom gas chamber to form a first film layer; S3, filling displacement gas into the reaction chamber to discharge residual aluminum source gas therein; S4, filling oxide gas into the reaction chamber to oxidize the first film layer and convert into an aluminum oxide film layer; S5, filling displacement gas into the reaction chamber to discharge residual oxide gas therein; and S6, repeating steps S2 to S5 to form an aluminum oxide film layer with a preset number of layers and a preset thickness on the wall surface of the atom gas chamber, so as to form the atom gas chamber with the sapphire-coated film. The application can enhance the shielding resistance of the alkali metal atom gas chamber and improve the electromagnetic wave precision measurement performance of the atom gas chamber.

The invention discloses a device for growing a large-size sapphire plate through an edge-defined film-fed growth method. The device comprises a growth furnace, a heating and heat preservation system, a crucible system, a lifting mechanism, a rotating mechanism and a lifting mechanism. The growth furnace is divided into an upper furnace chamber and a lower furnace chamber which are independently heated in a partitioned mode, a heat shield is arranged between the upper furnace chamber, the crucible body is arranged on the crucible tray and arranged in the lower furnace chamber, a lifting mechanism and a rotating mechanism are arranged on the lower side of the crucible tray, a mold is arranged in the crucible body, and the mold is connected with a lifting mechanism through a lifting rod. The upper furnace chamber and the lower furnace chamber are designed, the temperature gradient is independently controlled in a partitioned mode, and high-speed growth of plates is achieved. Meanwhile, effective release of thermal stress in the plate is ensured, wafer fragmentation is prevented, the growth efficiency of crystals is improved, high-quality growth of the large-size sapphire plate is achieved, and the problems that in the prior art, thermal stress in the plate is difficult to effectively release, and the growth quality of the crystals is not high are solved; and a new possibility is provided for the application of the sapphire single crystal in the military and civil fields.

The utility model discloses high-safety energy-saving sapphire crystal growth equipment, relates to the technical field of sapphire crystal growth, and aims to solve the problems that heat cannot be quickly dissipated and the use of the equipment is influenced as the interior of the conventional sapphire crystal growth equipment is lack of an efficient cooling structure, and the key point of the technical scheme is that the high-safety energy-saving sapphire crystal growth equipment comprises a crystal growth furnace, a cooling cavity is reserved in the outer side of the crystal growth furnace, a heat conduction plate is fixedly connected to the inner side of the cooling cavity, a cooling pipe is fixedly connected to the outer side of the heat conduction plate, a water inlet pipe is fixedly connected to one end of the outer side of the cooling pipe, a water outlet pipe is fixedly connected to the other end of the outer side of the cooling pipe, and a cover plate is fixedly connected to the outer side of the crystal growth furnace. And the outer side of the cover plate is fixedly connected with a shell. And the effects of high efficiency, energy conservation and safe cooling and heat dissipation are achieved.