595 results about "Sapphire" patented technology

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention discloses a plasma surface activation pre-bonding-femtosecond laser connection integrated process, belongs to the technical field of advanced dissimilar material precision connection, and particularly relates to a multi-material interface efficient connection method based on plasma surface activation pre-bonding and femtosecond laser processing. The method is suitable for high-strength and low-thermal-damage heterogeneous bonding of transparent materials (such as glass, quartz and sapphire) and transparent materials or metal materials (such as titanium alloy, stainless steel and invar alloy). According to the method, interface atomic-scale cleaning and chemical activity regulation and control are achieved through plasma activation, interface connection of the two materials is induced by combining the femtosecond laser ultrafast nonlinear effect, and the bottlenecks that in a traditional connection technology, optical contact depends on a mechanical clamp, and heat input is uncontrollable are broken through; and an innovative solution is provided for cross-material interface functional manufacturing in the fields of photoelectric device packaging, optical-electronic integrated systems and the like.

The invention relates to a preparation method and system for an atomic gas chamber for sapphire coating, and the preparation method comprises the steps: S1, placing a cleaned atomic gas chamber on a heating base station of a reaction chamber, and filling the reaction chamber with replacement gas to discharge residual gas in the reaction chamber; s2, filling aluminum source gas into the reaction chamber, and carrying out chemical adsorption on the wall surface of the atomic gas chamber to form a first film layer; s3, filling replacement gas into the reaction chamber to discharge residual aluminum source gas in the reaction chamber; s4, filling oxide gas into the reaction chamber to oxidize the first film layer and convert the first film layer into an aluminum oxide film layer; s5, filling replacement gas into the reaction chamber to discharge residual oxide gas in the reaction chamber; and S6, repeating the steps S2 to S5 to form a preset number of aluminum oxide film layers with a preset thickness on the wall surface of the atomic gas chamber so as to form the atomic gas chamber with the sapphire coating film. The anti-shielding capability of the alkali metal atomic gas chamber can be enhanced, and the electromagnetic wave precision measurement performance of the atomic gas chamber is improved.

The invention relates to the field of architectural ceramics, and discloses a sapphire effect dry particle, a ceramic tile with a sapphire imitation effect and a preparation method of the ceramic tile. The sapphire effect dry granules comprise blue dry granules and transparent dry granules, wherein the blue dry granules are prepared from the following raw materials: 1.5 to 3.5 parts of superfine tin dioxide, 15 to 19.5 parts of cobalt oxide, 4.5 to 7.5 parts of titanium oxide, 8 to 14 parts of zinc oxide, 32 to 43 parts of calcined aluminum oxide, 8 to 13 parts of quartz, 10 to 16 parts of potassium feldspar and 2.5 to 4.5 parts of boric acid; the transparent dry particles comprise the following raw materials in parts by weight: 8-15 parts of zinc oxide, 5-10 parts of aluminum oxide, 24-28 parts of quartz, 1-2.5 parts of nano silicon nitride and 7-11 parts of cryolite. By mixing the two dry granules, the frit dry granules which have a three-dimensional effect and an ice crack texture and imitate the texture of sapphire crystals can be prepared. The ceramic tile with the sapphire-like effect can be prepared by adopting the dry particles with the sapphire effect.

The invention discloses a follow-up PIV boundary layer flow field test system and test method based on electrolytic hydrogen bubbles. The follow-up PIV boundary layer flow field test system comprises an integrated optical measurement module and a tracer particle generation module, the optical measurement module is arranged in the UUV and comprises a laser transmitter assembly, a sapphire prism and two imaging cameras which are symmetrically arranged, and laser sheet light forms a sheet light area on the outer surface of the UUV after being refracted by the sapphire prism; the tracer particle generation module comprises a cathode, an anode and a power supply unit, the cathode is a platinum wire array composed of a plurality of platinum wires arranged in the axial direction of the UUV, and the platinum wires are located at different heights away from the wall face of the UUV; the power supply unit selectively electrifies the platinum wire, independently adjusts the voltage, controls the number and frequency of generated hydrogen bubbles, and achieves the synchronous measurement of flow field information at different thickness positions of a boundary layer. According to the invention, boundary layer flow field in-situ follow-up measurement and synchronous fine measurement of different thickness positions under the condition of not changing the UUV shape are realized, and the device has the advantages of high integration level, small flow field disturbance, high measurement efficiency and the like.

The utility model provides a cooling base and a cooling station for a wafer, which are applied to the field of semiconductor manufacturing, the cooling base comprises a cooling base main body, a heat conduction film and heat conduction points, and the heat conduction points are uniformly arranged on the cooling base main body; sapphire is embedded in the heat conduction points and used for conducting heat, and a groove facilitating grabbing is further formed in the edge of the upper surface of the cooling base body. The cooling station comprises a cooling base, a liquid cooling channel and a nitrogen air compression device, and the liquid cooling channel is arranged on the lower surface of a main body of the cooling base; the nitrogen air compression device is arranged around the cooling base to form a nitrogen protection layer; compared with the prior art, the cooling base and the cooling station have the advantages that the cooling effect of the wafer is more uniform, and the wafer is convenient to grab so as to be convenient to mount and dismount.

The utility model relates to a 4K fluorescent endoscope optical system, which comprises an objective lens system, a relay lens system and an eyepiece system which are sequentially arranged along the light propagation direction, and is characterized in that the objective lens system is of a reverse long-distance structure; the system comprises a sapphire protection lens, a negative focal power lens, a prism or a steering prism, a positive focal power plano-convex cemented lens, a positive focal power triple cemented lens and a first positive focal power double cemented lens which are arranged along a light propagation direction, the relay lens system comprises n relay lens groups, and each relay lens group is of a double telecentric structure. And the eyepiece system is arranged in the light transmission direction and is formed by symmetrically arranging two doublet rod lenses, n is an odd number, the eyepiece system is of an object space telecentric structure, and the eyepiece system comprises a second positive-focal-power doublet lens, a positive-focal-power lens and a sapphire lens which are glued into a whole in the light transmission direction. The structure of an optical system can be simplified, production and processing cost can be reduced, and 4K ultra-high-definition fluorescent laparoscopic imaging can be realized at the same time.

The invention belongs to the technical field of high-temperature flow field velocity testing, and discloses a PIV (particle image velocimetry) endoscopic protection device for measuring a high-temperature airflow velocity field, which is suitable for measuring three-dimensional velocity field distribution in a turbine channel, between stages and at an inlet and an outlet of a turbine in a high-temperature and high-speed airflow environment. The device is characterized by comprising a shell, an inner wall, a sapphire glass tube, a partition plate, a light guide window, a water inlet channel, a water outlet channel, an optical element, a mounting seat and a cavity. The shell, the inner wall and the sapphire glass tube are coaxially sleeved and respectively form two-stage interlayers; the space between the shell and the inner wall is divided into an n-shaped water inlet channel and an n-shaped water outlet channel through a partition plate, circulating flowing of cooling water is achieved, and an endoscope optical assembly and a sapphire glass tube are efficiently cooled. Light guide windows are formed in the side wall of the shell from top to bottom in an equal-diameter and equal-interval mode, and an optical element capable of moving up and down in the glass tube in the axial direction is combined, so that the narrow measurement section in the turbine can be accurately measured; according to the structure, the temperature near the sapphire glass tube can be controlled below 500K under the extreme condition that the external environment temperature is up to 2000K, high temperature is effectively isolated, thermal stress concentration is relieved, and stable signal transmission and imaging measurement are ensured. Compared with the prior art, the endoscope probe can accurately reach a measurement area which is difficult to cover by a traditional light source, and efficient and stable measurement of a high-temperature, complex and narrow space flow field is achieved.

The invention belongs to the technical field of self-healing performance evaluation of self-healing hole sealing materials, and particularly discloses a device and a method for evaluating a crack repairing effect of a self-healing hole sealing material. Comprising a constant-temperature and constant-humidity chamber, a curing box, a sucking pump, a one-way valve, a flow meter, a metal container, a pressure sensor, a crack width gauge, a computer, a constant-temperature and constant-humidity chamber power switch, a temperature display, a temperature controller, a humidity display, a humidity controller, a confining pressure simulation device, a sapphire glass window, a pressure reducing valve, a gas cylinder, a plug and a self-repairing hole sealing material after crack prefabrication. Compared with the prior art, the maintenance environment of the self-repairing hole sealing material can be controlled, the crack repairing effect of the self-repairing hole sealing material in a stress state can be simulated by applying confining pressure, and the test efficiency and accuracy of a crack repairing experiment are improved.

The invention relates to the field of crystal growth, in particular to a sapphire crystal heating device and method.The sapphire crystal heating device is suitable for a sapphire furnace, the sapphire furnace comprises a furnace body and a crucible, and the crucible is located in the furnace body; the sapphire crystal heating device comprises a heat preservation unit located between the furnace body and the crucible, a heat preservation cavity is formed in the heat preservation unit, the crucible is covered with the heat preservation unit, and the heat preservation unit is used for conducting heat preservation on the environment in the heat preservation cavity; a through hole allowing the lifting rod to enter the heat preservation cavity is formed in the top face of the heat preservation unit, and the diameter of the through hole is 2-5 times that of the lifting rod; the heating unit is located in the heat preservation cavity, and the heating unit is used for heating the raw materials in the crucible; and the temperature monitoring unit is used for penetrating through the through hole to measure the temperature of the raw material in the crucible. By designing the diameter of the through hole, the temperature measurement visual angle and heat control are considered, and the technical effect of improving the sapphire crystal growth quality is achieved.

The invention discloses a multilayer composite patterned substrate and a preparation method and application thereof, and relates to the technical field of substrate material preparation. The invention provides a multi-layer composite patterned substrate which comprises a sapphire bottom layer, a periodic pattern layer and a reflecting material layer. The periodic pattern layer is arranged on the surface of the sapphire bottom layer; the periodic pattern layer is provided with a window area, and the window area is a non-coverage area of the periodic pattern layer on the sapphire bottom layer; a reflecting material layer is arranged on the surface of a non-window area of the periodic pattern layer; and an epitaxial layer can be additionally arranged between the sapphire bottom layer and the periodic pattern layer. According to the invention, the surface emergent light of the LED device is obviously increased, so that the external quantum efficiency is improved, and meanwhile, the problem that the GaN growth is influenced by a reflecting layer material (mainly a metal reflecting mirror material) is solved.

The invention belongs to the technical field of grinding materials and grinding tools, and particularly relates to a diamond electroplated grinding wheel directionally arranged in a magnetic field and a preparation method and application thereof. Firstly, electroplating liquid is added into an electroplating bath, then 30%-40% of magnetic diamond abrasive materials are added into the electroplating liquid, directional magnetic sanding is carried out with the grinding wheel base body A as a cathode and a nickel plate as an anode, the magnetic field intensity is controlled to be 0.1-1 T, the cathode current density is controlled to be 0.4 A / dm < 2 >-0.6 A / dm < 2 >, the electroplating time is 10-20 min, and a grinding wheel base body B is obtained; removing floating sand from the grinding wheel base body B to obtain a grinding wheel base body C; and the grinding wheel base body C is thickened to obtain a grinding wheel base body D, and the grinding wheel base body D is modified to obtain the grinding wheel. The grinding rate of the manufactured grinding wheel is reduced by 10%-25%, the service life is prolonged by 30%-50%, the machined surface roughness (Ra) can reach 0.3 micrometer or below, and the machined surface precision is reduced by 10%-25%. The grinding wheel is applied to nanoscale grinding of optical glass, sapphire and silicon carbide wafers and forming machining of turbine blade mortises and ceramic matrix composites, and the precision and roughness of the grinding wheel can be effectively guaranteed.

The utility model discloses an IPL laser hair removal instrument with a sapphire ice compress function, which relates to the technical field of hair removal instruments and comprises a machine body, an end shell is fixed at the front end of the machine body, a tail shell is fixed at the tail end of the machine body, a sapphire ice compress laser is arranged in the machine body, a charging power supply is fixed in the machine body, and a heat dissipation fin plate is fixed in the machine body. A control circuit board is fixed in the machine body, an air blower is fixed in the machine body, heat dissipation channels are formed in the machine body, the end shell and the tail shell, the heat dissipation channels and the air blower are arranged in a matched and communicated mode, and the surface air flowing effect of the charging power source, the heat dissipation fins and the control circuit board is improved through the heat dissipation channels; the IPL laser hair removal instrument with the sapphire ice compress function is provided; by arranging the heat dissipation channel, traditional single-channel heat dissipation is changed, the surface heat dissipation efficiency of internal sapphire and corresponding electronic elements is improved, the internal air flowing efficiency is improved through cooperation of the air blower and the heat dissipation channel, and then the internal air heat dissipation effect is improved.

A method for manufacturing a fused metal sight window that melts the metal of the frame around the window, instead of the traditional method of melting the window into the frame. Since most of the superior optical transparent materials (such as fused silica, sapphire, YAG, ALON, diamond, fused quartz and magnesium fluoride) have a melting point higher than most metals, it was not previously possible to create fused metal sight windows with these materials. By melting the frame onto the window, many new combinations of metals and optical materials may be used while retaining the strength of the sight window that results from fusing the metal and the window.

The invention relates to the field of sapphire crystal processing, in particular to a sapphire source rod processing method special for sapphire optical fiber drawing, which comprises the following steps: 1) crystal orientation control: controlling the orientation angle deviation to be within + / -0.1 degrees, and ensuring that a drawn rod is parallel to a C axis; (2) drawing out a bar: drawing out a bar with the diameter phi of 20mm, the length of more than 0.5 m and the perpendicularity of less than 0.5 mm; 3) cutting off the end surface, and controlling the length to be 51 + / -1cm; (4) multi-stage grinding is conducted, and the diameter is controlled to be 2 mm + / -0.05 mm; (5) multi-stage polishing is conducted, and the end face roughness Ra is controlled to be smaller than 5 micrometers; according to the method, the problems of directional deviation, diameter tolerance and perpendicularity control of the high-hardness brittleness ultra-long and ultra-fine sapphire crystal bar are solved, efficient and high-consistency machining of the high-hardness brittleness ultra-long and ultra-fine sapphire crystal bar (phi 2 mm + / -0.05 mm, the length larger than or equal to 0.5 m and the perpendicularity smaller than 0.5 mm) is achieved, and core material guarantee is provided for optical fiber drawing.

The invention relates to the technical field of silicon wafer polishing, and discloses a polishing process for a sapphire silicon wafer, which comprises the following steps: S1, pretreatment: cleaning the sapphire silicon wafer, and corroding the surface of the silicon wafer by using a chemical corrosive to remove an oxide layer and a damaged layer on the surface; and S2, rough polishing treatment is conducted, specifically, the sapphire silicon wafer is placed on a polishing platform, polishing is conducted through a polishing solution containing aluminum oxide particles, and the polishing effect is monitored in real time. According to the polishing process for the sapphire silicon wafer, by optimizing the components and the particle size of the polishing solution and reasonably setting polishing parameters, the surface roughness of the sapphire silicon wafer can be effectively reduced, the surface roughness of the sapphire silicon wafer reaches the nanoscale level, and the surface quality of the sapphire silicon wafer is improved; the polishing efficiency is remarkably improved, the polishing time is shortened, and the technology is suitable for sapphire silicon wafers of different sizes and thicknesses and has wide applicability.

The invention relates to the technical field of accelerometer pendulous reeds, in particular to an accelerometer sapphire pendulous reed processing method. Through the synergistic effect of the laser-grinding combined machining technology and the intelligent clamp, the problems of residual stress, precision and efficiency in sapphire pendulous reed machining are systematically solved. The whole process is divided into three stages of rough machining, finish machining and dynamic stress control, and the whole process from a blank to a finished product is optimized in combination with a high-precision clamp and a real-time monitoring system.

The invention relates to the technical field of pressure sensing, and discloses a high temperature and pressure integrated measurement sensor, which comprises an optical fiber assembly and a diaphragm assembly which are fixedly connected with each other, the optical fiber assembly comprises an optical fiber base, and an optical fiber probe assembly is arranged in the optical fiber base; the diaphragm assembly comprises a diaphragm base welded to the optical fiber base, the bottom of the optical fiber probe assembly is located in the diaphragm base, a pressure sensing hole is formed in the bottom of the diaphragm base, sapphire glass and a pressure sensitive diaphragm are arranged above the pressure sensing hole, and the pressure sensitive diaphragm is connected with the bottom of the diaphragm base in a sealed mode. A vacuum cavity is arranged between the sapphire glass and the pressure sensitive diaphragm; compared with an existing pressure sensor based on the electrical principle, the sensor has the advantages of being high in high-temperature resistance, good in vibration resistance, small in assembling and debugging difficulty and capable of achieving temperature and pressure integrated measurement, and the problem that an existing sensor cannot be used in the extreme environments of high temperature, strong vibration and the like is solved.

The invention discloses a light-emitting diode chip for improving the polarization effect of a quantum well light-emitting layer and a preparation method of the light-emitting diode chip. Comprising a sapphire patterned substrate, a buffer layer, a defect barrier layer, an N-type gallium nitride layer, a current expansion layer, a stress release layer, a quantum well light-emitting layer, a polarization buffer layer, a P-type electron barrier layer, a P-type gallium nitride layer, a transparent conductive layer, an electrode layer and a protective layer which are sequentially arranged from bottom to top. The polarization buffer layer is arranged between the quantum well light-emitting layer and the P-type electron blocking layer, buffers energy level abrupt change, and improves the polarization effect. A composite structure of an In < x > Ga < 1-x > N / GaN superlattice and a GaN / Al < y > Ga < 1-y > N superlattice is inserted between the multi-quantum well layer and the electron blocking layer, mutation of energy level is buffered by adjusting gradient doping of In and Al, the polarization effect in quantum wells caused by high potential barriers of the electron blocking layer is effectively improved, and the luminous efficiency of the diode is further improved.

The invention relates to the technical field of ceramic tiles, in particular to a sapphire single crystal diamond glaze super-wear-resistant ceramic tile and a preparation method thereof. The sapphire single crystal diamond glaze super wear-resistant ceramic tile is prepared from the following raw materials in parts by weight: high-purity alpha-Al2O3 powder, nano-diamond turbid liquid, rare earth modified zirconium silicate, a gas-phase transport agent, a lattice matching cosolvent and zinc oxide whiskers. According to the invention, the high-purity alpha-Al2O3 epitaxially grows on the surface of the nano-diamond to form an atomic-scale coherent interface, the bonding strength is high, the high hardness of sapphire and the wear resistance of diamond are integrated, the self-sharpening characteristic is endowed to the glaze layer by a micro-scale interlocking structure, a new hard interface is exposed in the wear process, the surface wear resistance is continuously maintained, and the service life of the glaze layer is prolonged. The problem of performance degradation after traditional materials are abraded is solved.

The invention belongs to the technical field of tunnel monitoring, and particularly relates to dust interference prevention data correction equipment for tunnel flatness monitoring and a correction method, the dust interference prevention data correction equipment comprises an arched electric slide rail, the surface of the arched electric slide rail is slidably connected with a slide block, one side of the slide block is provided with an auxiliary mechanism, and the auxiliary mechanism comprises symmetrically arranged support frames. According to the correction equipment and method, the influence of external vibration on the high-precision laser scanner can be reduced by arranging a double-layer structure of the anti-interference mechanism, the protection tube and the isolation tube, the protection cover made of an optical-grade sapphire glass material has high light transmittance and anti-scratching performance, and the dust adhesion rate can be reduced by a surface nano coating; the high-pressure air pump isolates external dust through an annular air curtain formed by the air inlet pipe and the air inlet groove by means of airflow with the speed higher than that of air in the tunnel, the external dust is prevented from entering a scanning area, interference of dust, water vapor and other impurities on a scanning light path is reduced from the source, and the definition of original data obtained by the laser scanner in the complex tunnel environment is guaranteed.

An electrostatic chuck according to the present disclosure includes a plate-shaped body including an adsorption surface for mounting a workpiece, a base, and an electrode film located between the plate-shaped body and the base. The plate-shaped body and the base are made of sapphire. The angle between the adsorption surface and the c-plane of the sapphire is 45° or more.

The invention provides a Bi < 1.8 > Sm < 0.2 > O < 3 > ferroelectric film as well as a preparation method and application thereof. The preparation method comprises the following steps: taking sapphire subjected to annealing treatment at the temperature of 1100-1300 DEG C as a substrate, bombarding a bismuth oxide samarium target material in a chamber by adopting pulse laser, and depositing on the substrate at the temperature of 450-600 DEG C to form the Bi1. 8Sm0. 2O3 ferroelectric film. The preparation method of the Bi1. 8Sm0. 2O3 ferroelectric film provided by the invention is simple to operate, the production cost of the ferroelectric film is low, a brand new method and thought are provided for the preparation of the Bi1. 8Sm0. 2O3 ferroelectric epitaxial film, and the prepared Bi1. 8Sm0. 2O3 ferroelectric epitaxial film has excellent crystallinity and ferroelectric property.

The invention provides a GIS visible window preparation method, device and equipment and a storage medium, and the method comprises the following steps: firstly carrying out surface metallization treatment on sapphire transparent ceramic by using Ag-Cu-Ti soldering paste under vacuum, raising the temperature to a first high temperature, carrying out heat preservation, and then carrying out furnace cooling; then the kovar alloy and the sapphire are welded with the same soldering paste under the same conditions; and then the Al-Si-Mg brazing filler metal is used for welding the aluminum alloy and the kovar alloy under vacuum, the temperature is increased to a second low temperature lower than the first high temperature, heat preservation is conducted, and then furnace cooling is conducted. The SF6 leakage resistant sealing interface is formed through the steps. According to the method, the visual window is integrally prepared, the interior of the GIS can be directly observed, fault judgment accuracy and operation and maintenance efficiency are improved, power failure time is shortened, and stable operation of equipment is guaranteed.

The invention relates to the technical field of semiconductor photoelectricity, in particular to a blue light LED growing method for improving carrier recombination efficiency, which comprises the following steps of: S1, respectively extending a Buffer layer, a 3D layer, a GR layer and an N-GaN layer on sapphire according to a conventional blue light LED manufacturing process; and S2, a layer of N-Al0. 2Ga0. 8N is additionally arranged behind the N-GaN layer, and SiH4, TMAl and TEGa are introduced at the same time. And S3, continuing to be consistent with the conventional blue light LED manufacturing process, and extending Q1, Q2 and Q3 quantum well layers. And S4, according to the Last Barrier layer, a conventional Al < 0.3 > Ga < 0.7 > N + AlN layer is changed into an Al < 0.7 > Ga < 0.3 > N-Al < 0.65 > Ga < 0.35 > N gradient layer, and the time is shortened by half. S5, a hole storage acceleration layer is formed on the rear portion of the Last Barrier layer in an epitaxial mode, P-In0. 2Ga0. 8N is introduced, a shallow energy level layer is formed, the time is consistent with that of S4, and S6, an Al0. 45Ga0. 55N-Al0. 5Ga0. 5N gradient layer is formed on the rear portion of the Last Barrier layer in an epitaxial mode again, and the time is half of that of S5. The quantum well structure is redesigned, and the n-AlGaN and the hole storage acceleration layer are added to realize the deceleration of electrons in the quantum well and the acceleration of holes, so that the main light-emitting region is migrated to a deep level, the carrier recombination efficiency is improved, and the light-emitting efficiency is further improved.

The invention discloses a patterned sapphire composite substrate and a preparation method, and relates to the field of LED epitaxial patterned substrate materials, and the patterned sapphire composite substrate comprises a substrate material layer which is made of sapphire, aluminum nitride or gallium nitride; a low refractive index layer material layer; the low-refractive-index material layer is attached to the periphery of the substrate material layer to form a conical inner and outer two-layer type composite pattern structure, and the density of the low-refractive-index material layer is in a gradient increase trend of 1.42-1.52 from a position close to the substrate to a position far away from the substrate. The method has the advantages that the light extraction efficiency is improved, the dislocation density is reduced, the crystal quality is enhanced, the etching process is optimized, the light extraction efficiency is improved, the process compatibility is high, and the cost effectiveness is high.

The utility model relates to a dual-channel optical filter based on a three-rectangular cavity edge coupling waveguide. The dual-channel optical filter comprises a silicon substrate, a sapphire layer, a graphene nano-strip waveguide, a first graphene rectangular resonant cavity, a second graphene rectangular resonant cavity and a third graphene rectangular resonant cavity, the sapphire layer is arranged above the silicon substrate; a graphene nano-strip waveguide, a first graphene rectangular resonant cavity, a second graphene rectangular resonant cavity and a third graphene rectangular resonant cavity are arranged on the upper surface of the sapphire layer; the first graphene rectangular resonant cavity and the third graphene rectangular resonant cavity are connected in series and arranged on one side of the graphene nano-strip waveguide, and the second graphene rectangular resonant cavity is arranged on the other side of the graphene nano-strip waveguide. According to the utility model, the problems of narrow bandwidth and poor filtering effect of an optical filter with a graphene structure are solved; the dual-channel optical filter which is small in size, wide in bandwidth, excellent in filtering effect, dynamically tunable and easy to integrate is realized in an infrared band.

The utility model relates to the technical field of optical part machining, and discloses a sapphire special-shaped part concave-convex surface arc light chamfering machine which comprises an operation table, and a lifting seat, a servo motor, an adjusting arm and other components are arranged on the operation table. And switching of the machining angle and position of the sapphire special-shaped part can be achieved through the lifting base, the servo motor and the adjusting arm. The positioning piece is matched with the limiting piece, the special-shaped piece can be accurately positioned and fixed, the clamping wing and the correcting plate of the limiting piece clamp and fix the special-shaped piece under the action of the gear, and position deviation is prevented. The operation table is correspondingly provided with a concave grinding tool, a convex grinding tool and a rotating motor. According to the utility model, the problems that the stress is non-uniform when a handheld workpiece is chamfered, the manual repeated debugging operation is tedious, and the position deviation is easy to occur when a special-shaped workpiece is clamped in a one-way manner are solved, and the machining precision and efficiency are improved.

The invention provides laser-assisted diamond sheet sawing equipment, which relates to the field of laser-assisted diamond sheet sawing equipment, and comprises a base, a sawing table, a laser-assisted device, a diamond clamp, a ball precision lead screw linear sliding table module, a pressure sensor connecting unit, a high-precision linear sliding rail, a sliding block, a sliding rail bracket, a clamping device and a locking device, the heating effect of a laser auxiliary device is adopted, the mechanical property of a diamond material is reduced, the machining efficiency is improved, the machining quality of the diamond end face is improved, a sandwich structure (sapphire glass-diamond sheet-sapphire glass) is adopted for clamping the diamond sheet, the stress concentration of the end face during cutting is reduced, and the edge breaking resistance is improved; a micro pressure sensor is adopted to measure the pressure of interaction between a saw blade and a diamond, the pressure is adjusted through a ball precision lead screw linear sliding table module, and the pressure is kept to fluctuate within a certain range within a period of time during working. The diamond machining quality is improved, the edge breaking phenomenon of the end face of the diamond is relieved, and the machining efficiency is improved.

The present invention relates to the technical field of three-phase flow detection, and provides a fluorescent fiber optic probe device for three-phase flow detection, comprising: a packaging shell; a sapphire probe disposed within the packaging shell; a connected small-diameter self-focusing lens and a large-diameter self-focusing lens located above the sapphire probe; an integrated fiber bundle structure divided into a transmitting fiber and a receiving fiber within a main cavity; a laser transmitting module connected to the transmitting fiber; a collimating lens located above the receiving fiber; a trapezoidal waveguide structure located above the collimating lens; a first optical focusing assembly and a second optical focusing assembly disposed side by side above the trapezoidal waveguide structure, with a reflective volume holographic grating disposed below the first optical focusing assembly; a first photoelectric conversion module and a second photoelectric conversion module; and a main control module. The device of the present invention can effectively avoid optical power attenuation caused by optical fiber splitting and filters, thereby ensuring optical signal transmission efficiency and detection accuracy.