3187 results about "Sapphire" patented technology

A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.

A dual plasma source (80) is provided for a plasma processing system (10), comprising a first plasma source (82) and a second plasma source (84). The first plasma source (82) has a first plasma passageway (86) for transporting a first plasma therethrough toward a processing chamber (16), the first plasma passageway providing a first inlet (90) for accepting a first gas mixture to be energized by the first plasma source. The second plasma source (84) is connected to the first plasma source (82) and has a second plasma passageway (88) for transporting a second plasma therethrough toward the processing chamber (16), the second plasma passageway providing a second inlet (92) for accepting a second gas mixture to be energized by the second plasma source. The first plasma passageway (86) is constructed from a material that resists atomic oxygen recombination with the first plasma, and the second plasma passageway (88) is constructed from a material that resists etching by the second plasma. In a more limited embodiment, the first plasma passageway (86) is constructed from quartz (SiO.sub.2) and the second plasma passageway is (88) constructed from alumina (Al.sub.2 O.sub.3) or single crystal alumina (sapphire).

A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y₂O₃ coating. The Y₂O₃ coating is a thin film formed using suitable CVD or PVD operations. The Y₂O₃ coating is resistant to degradation in fluorine etching chemistries commonly used to etch silicon in semiconductor manufacturing. The plasma processing apparatus may be used in etching, stripping and cleaning operations. Also provided in another embodiment is a plasma processing apparatus having a quartz process kit coated with a sapphire-like film.

A substrate supporting apparatus includes a plate member of an aluminum alloy having a flat upper surface, bottomed pits formed in the plate member, and spacer members held in the pits, individually. The spacer members are sapphire spheres. The diameter of each spacer member is a little smaller than that of each pit. The upper end of each spacer member projects from the upper surface of the plate member. A spot facing is formed in a region that includes the open edge portion of the pit. A bending portion which is obtained by plastically deforming the open edge portion of the pit toward the spacer member is formed on a bottom surface of the spot facing. A V-shaped groove is formed behind the bending portion.

A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).

A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

A laser treatment device and process with controlled cooling. The device contains a cooling element with high heat conduction properties, which is transparent to the laser beam. A surface of the cooling element is held in contact with the tissue being treated while at least one other surface of the cooling element is cooled by the evaporation of a cryogenic fluid. The cooling is coordinated with the application of the laser beam so as to control the temperatures of all affected layers of tissues. In a preferred embodiment useful for removal of wrinkles and spider veins, the cooling element is a sapphire plate. A cryogenic spray cools the top surface of the plate and the bottom surface of the plate is in contact with the skin. In preferred embodiments the wavelength of the laser beam is chosen so that absorption in targeted tissue is low enough so that substantial absorption occurs throughout the targeted tissue. In a preferred embodiment for treating large spider veins with diameters in the range of 1.5 mm, Applicants use an Er:Glass laser with a wavelength of 1.54 microns.</PTEXT>

An electrode for a cardiac lead and method of making the same are provided. The electrode includes an electrode member and a coating applied to the electrode member. A method of fabricating a high impedance cardiac lead electrode is provided. The method includes the steps of providing an electrode member and coating a first portion of the electrode member with an electrically insulating material and placing a tubular mask or shield over the electrode. Portions of the insulating material are removed to expose selected areas of the electrode. The second or exposed portion enhances the impedance of the electrode, resulting in power savings and extended life spans for implantable stimulation and sensing devices. Exemplary materials for the coating includes diamond-like carbon and sapphire.

In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. In one embodiment the stress layer comprises a flexible material.

Light sensing devices are monolithically integrates with CMOS devices on Thin-Film Silicon-On-insulator (TF-SOI) or Thin-Film Germanium-On-Insulator (TF-GeOI) substrates. Photodiode active layers are epitaxially grown on the front-side of the substrate and after full processing of the front-side of the substrate, the substrate material is removed under the buried insulator (buried oxide). Monolithically integrated structures are then fabricated on the back of the buried oxide. The back-side is then bonded to a new substrate that is transparent to the wavelengths of interest. For example, quartz, sapphire, glass, or plastic, are suitable for the visible range. Back-side illumination of the sensor matrix is thereby allowed, with light traveling through the structures fabricated on the back of the substrate, opposite to the side on which CMOS is made.

A method of fabricating substrates, e.g., bulk wafers, silicon on insulator wafers, silicon on saphire, optoelectronic substrates. The method includes providing a substrate (e.g., silicon, gallium arsenide, gallium nitride, quartz). The substrate has a film characterized by a non-uniform surface, which includes a plurality of defects. At least some of the defects are of a size ranging from about 100 Angstroms and greater. The method also includes applying a combination of a deposition species for deposition of a deposition material and an etching species for etching etchable material. The combination of the deposition species and the etching species contact the non-uniform surface in a thermal setting to reduce a level of non-uniformity of the non-uniform surface by filling a portion of the defects to smooth the film of material. The smoothed film of material is substantially free from the defects and is characterized by a surface roughness of a predetermined value.

A lens and encapsulant made of an amorphous fluoropolymer for a light-emitting diode (LED) or diode laser, such as an ultraviolet (UV) LED (UVLED). A semiconductor diode die (114) is formed by growing a diode (110) on a substrate layer (115) such as sapphire. The diode die (114) is flipped so that it emits light (160, 365) through the face (150) of the layer (115). An amorphous fluoropolymer encapsulant encapsulates the emitting face of the diode die (114), and may be shaped as a lens to form an integral encapsulant/lens. Or, a lens (230, 340) of amorphous fluoropolymer may be joined to the encapsulant (220). Additional joined or separate lenses (350) may also be used. The encapsulant/lens is transmissive to UV light as well as infrared light. Encapsulating methods are also provided.

A buffer layer 12 composed of at least a Group III nitride compound is laminated on a substrate 11 composed of sapphire, and an n-type semiconductor layer 14, a light-emitting layer 15, and a p-type semiconductor layer 16 are laminated in a sequential manner on the buffer layer 12. The buffer layer 12 is formed by means of a reactive sputtering method, the buffer layer 12 contains oxygen, and the oxygen concentration in the buffer layer 12 is 1 atomic percent or lower. There are provided a Group III nitride compound semiconductor light-emitting device that comprises the buffer layer formed on the substrate by means of the reactive sputtering method, enables formation of a Group III nitride semiconductor having favorable crystallinity thereon, and has a superior light emission property, and a manufacturing method thereof, and a lamp.

A heating apparatus comprising a support base and a microplate having a first surface and an opposing second surface. The microplate is positioned adjacent the support base and comprises a plurality of wells formed in the first surface thereof. Each of the plurality of wells is sized to receive an assay therein. A sapphire crystalline transparent window is positioned adjacent the microplate opposing the support base. A heating device heats the transparent window in response to a control system.

An electrode for a cardiac lead and method of making the same are provided. The electrode includes an electrode member and a coating applied to the electrode member. The coating is composed of an electrically insulating material and covers a first portion of the exterior of the electrode member while leaving a preselected second portion thereof exposed. The second or exposed portion enhances the impedance of the electrode, resulting in power savings and extended life spans for implantable stimulation and sensing devices. Exemplary materials for the coating includes diamond-like carbon and sapphire.

Surgical method and apparatus for presbyopia correction and glaucoma by laser removal a portion of the sclera and/or ciliary tissue are disclosed. The disclosed preferred embodiments of the system consists of a beam spot controller, an articulated arm and an attached end-piece. The basic laser beam includes UV laser having wavelength ranges of (0.19-0.36) microns, generated from UV excimer lasers of ArF, XeCl or solid state lasers of Nd:YLF, Nd:YAG, Ti:sapphire with harmonic generation using nonlinear crystals. Presbyopia is treated by ablation of the treated surface tissue in predetermined patterns outside the limbus to increase the accommodation of the eye. Glaucoma is treated by decreasing of intra ocular pressure of the laser surgery.