164 results about "Boule" patented technology

The utility model discloses a wafer processing device, and belongs to the technical field of semiconductors. The wafer processing device comprises a carrying table, a shock insulation pad and an ultrasonic device, wherein the carrying table is used for carrying a crystal ingot with a modified layer; the ultrasonic device is arranged above the carrying table, the ultrasonic device can generate transverse vibration waves, and the transverse vibration waves are used for vibrating along the crystal ingot and enabling cracks of the modified layer to extend in the transverse direction; and the bottom of the carrying table is fixedly arranged on the shock insulation pad. According to the utility model, the cracks of the modified layer formed on the crystal ingot by the laser pulse grow and are connected along the transverse direction, the longitudinal growth of the cracks is avoided, the production efficiency of the modified layer is improved, the laser pulse does not need to be intensively emitted, and the wafer processing period is shortened.

The embodiment of the invention provides a method and device for automatically controlling a semiconductor crystal ingot to enter a water tank, and relates to the technical field of semiconductor crystal ingot processing auxiliary equipment.The device comprises a rack, a lifting and transplanting device is arranged on the rack, a turnover positioning device is arranged on one side of the lifting and transplanting device, and a first conveying device is arranged on the other side of the lifting and transplanting device; the lifting transplanting device comprises a lifting mechanism, the lifting mechanism is arranged at the tail end of the first conveying device, a transverse moving mechanism is arranged above the lifting mechanism, the overturning positioning device comprises an overturning working frame, a lifting device is arranged on the overturning working frame, an overturning driving part is arranged on the lifting device, and the U-shaped conveying group is arranged on the other side of the overturning positioning device. A turnover workbench is arranged on the turnover driving part, a positioning tool is arranged on the turnover workbench, and the turnover driving part is a servo motor. The device has the effects that operation is stable, and the crystal ingot is prevented from being collided and damaged.

The invention discloses a high-efficiency low-loss preparation method of a single crystal silicon carbide wafer. The method comprises the following steps: A, grinding the surface of a single crystal silicon carbide ingot; b, the ultrafast pulse laser is modulated into N light spots, the N light spots are focused in the crystal ingot and distributed in the axial direction of the crystal ingot according to preset depth positions, and all the light spots are parallel to the horizontal direction; all the light spots are scanned at the same time, the scanning surface formed by the same light spot covers the cross section of the single crystal silicon carbide crystal ingot in the horizontal direction, and N laser modified layers are formed after scanning; c, carrying out stress-induced separation on the single crystal silicon carbide crystal ingot in the step B; and D, grinding the cutting surface of the single crystal silicon carbide wafer. According to the high-efficiency and low-loss preparation method of the single-crystal silicon carbide wafer, the preparation efficiency of the silicon carbide wafer is improved, meanwhile, the material loss of the single-crystal silicon carbide ingot is reduced, and the yield of the single-crystal silicon carbide ingot is improved.

The invention discloses an oxygen-enriched destressing crystal growth method and a crystal growth furnace, and relates to the technical field of crystal growth, and the oxygen-enriched destressing crystal growth method comprises the following steps: step 1, pre-treating a PMNT polycrystal material, and putting the pretreated PMNT polycrystal material into a crucible; 2, pre-flushing the growth furnace and creating an oxygen partial pressure environment; 3, raising the temperature in the growth furnace to melt and homogenize the PMNT polycrystal material in the crucible; step 4, the crucible moves downwards for directional solidification of the crystal, a solid-liquid interface is formed and stably moves upwards, and in the process, a dynamic regulation and control strategy is adopted in the growth furnace to control an oxygen-enriched environment to promote crystal growth, so that the crystal digests growth stress in the growth process, and formation of oxygen vacancies is inhibited; and step 5, after crystal growth is finished, gradient cooling is performed to room temperature in an oxygen-enriched environment, and a crystal ingot is obtained. Oxygen is used as a regulation and control tool, the stress problem caused by oxygen vacancy is physically solved, the color center and performance problems caused by oxygen vacancy are chemically solved, and the crystal growth quality is improved.

The invention belongs to the technical field of semiconductor material processing, and relates to a laser modification and low-temperature impact controllable stripping method and system for a single crystal silicon carbide wafer. The method comprises the following steps: pretreating the surface of a single crystal SiC crystal ingot to form a uniform rough surface; setting femtosecond laser initial parameters, and carrying out modification treatment in the crystal ingot to form a modified area; laser parameters are optimized through sweep-frequency optical coherence tomography and a CNN model, and optimal parameters are obtained; inducing to form a modified layer parallel to the surface in the crystal ingot by utilizing the parameters; coating a polymer on the surface of the modified layer and pre-cooling the crystal ingot; and applying a low-temperature impact load to promote the II-type crack to expand along the crystal face so as to realize controllable stripping. The method solves the problem that cracks are difficult to control in the laser stealth cutting technology.

The invention provides a method for improving the laser lift-off efficiency of a silicon carbide crystal ingot and a lift-off sheet thereof, and relates to the technical field of laser lift-off. Comprising the following steps: polishing a silicon carbide crystal ingot, testing first resistivity information of different positions on the surface of the polished silicon carbide crystal ingot, constructing a standard relational expression of resistivity and laser power according to a statistical relationship, substituting the resistivity information measured in the step S2 into the standard relational expression, and calculating the resistivity of the silicon carbide crystal ingot. Calculating to obtain target power values at different positions on the surface of the silicon carbide crystal ingot; and S2, laser processing conditions of different positions are set according to the target power value, laser modification processing is carried out, the wafer after laser modification processing is stripped, a stripped piece is obtained, and the stripped silicon carbide crystal ingot is returned to the step S1 to be circularly processed. The specific resistivity value is obtained through one-time resistivity testing, the optimal laser machining parameters can be obtained, the number of times of secondary reworking can be effectively reduced, and the stripping and slicing efficiency is greatly improved.

The utility model discloses a crystal ingot conveying device. The crystal ingot conveying device comprises a supporting piece, a synchronous plate, a jacking assembly and a conveying assembly. A cavity is formed in the supporting piece, and a plurality of positioning rings used for containing crystal ingots are evenly arranged on the upper end face of the supporting piece in the front-back direction. And the synchronous plate is slidably arranged in the cavity. The jacking assembly is at least partially arranged on the synchronous plate and can jack up the crystal ingot on the positioning ring. The conveying assembly is at least partially arranged at the bottom of the supporting piece and connected with the synchronous plate. Through the arrangement, when the crystal ingot on any positioning ring on the conveying device is taken away, the jacking assembly can be matched with the conveying assembly, the crystal ingots on all the positioning rings on the front side of the positioning ring are integrally moved backwards, the vacant positioning ring is supplemented, the continuity and timeliness of crystal ingot conveying are improved, and the loss of human resources is reduced.

Disclosed herein is a furnace for producing single crystal boules, the furnace comprising a furnace wall; a plurality of crucibles, where each crucible is operative to contain a melt that is contacted by a different pull rod; where each pull rod is attached to seed crystal; a first drive system that is located above the furnace and is configured to drive a first main shaft that is either in a geared or belted communication with a plurality of first planetary shafts; where each pull rod is in rotary communication at least one planetary shaft; where each pull rod is operative to contact the melt while undergoing rotary and translational motion with respect to a melt in one of the plurality of crucibles; where each crucible is surrounded by an induction coil and a refractory lining; and wherein each induction coil and refractory lining lie within the furnace wall.

The invention discloses a fragmentation method for a composite silicon carbide substrate. The fragmentation method comprises the following steps: 1) combining a single crystal silicon carbide crystal ingot with a substrate layer; 2) performing internal modification processing on the single crystal silicon carbide crystal ingot by using laser, forming a modification processing layer in the single crystal silicon carbide crystal ingot, and enabling the incident surface of the laser to deviate from the substrate layer; 3) separating the single crystal silicon carbide crystal ingot along the modified processing layer to obtain a residual single crystal silicon carbide crystal ingot and a composite layer with a substrate layer and a single crystal silicon carbide layer; (4) repeating the steps (1)-(3) on the residual single crystal silicon carbide crystal ingot; wherein the sequence of the step 1) and the step 2) can be exchanged. The problems that in the prior art, saw bite loss is large, surface damage is obvious, and wire saw wire loss is large can be solved through the laser fragmentation technology; the utilization rate of the single crystal silicon carbide is improved by utilizing the substrate layer, structural support is provided for the single crystal silicon carbide layer, and subsequent processing of the single crystal silicon carbide layer is facilitated.

The application relates to a laser-induced silicon carbide wafer crack propagation plasma control method, which comprises the following steps: laser focusing is carried out at a to-be-processed position of a silicon carbide crystal ingot, and a high excitation state plasma is generated in the crystal ingot; after the plasma is generated, an external magnetic field or an electric field is applied to control the movement state of the plasma, so that the crack propagates along a predetermined path and depth; characteristic parameters of the plasma are monitored in real time, data is transmitted to a feedback control system, laser parameters, magnetic field or electric field intensity are dynamically adjusted according to the movement state of the plasma; the crack growth range is expanded through multiple scanning, and wafer peeling is realized. The laser-induced silicon carbide wafer crack propagation plasma control method can effectively control the crack propagation path and depth, avoid the disordered propagation of the crack, greatly reduce the material damage in the silicon carbide wafer processing process, efficiently peel the silicon carbide wafer, improve the processing speed, and improve the quality of the final product.

The utility model discloses a fixing clamp for silicon carbide crystal ingot plane grinding machining, and relates to the technical field of silicon carbide crystal machining. Comprising a supporting mechanism, a rotary adjusting mechanism and a plurality of clamping mechanisms. The supporting mechanism is used for supporting and positioning the silicon carbide crystal ingot, the rotary adjusting mechanism and the clamping mechanism; the rotary adjusting mechanism comprises a rotary table, an adjusting rod and a locking arm; the clamping mechanism comprises a self-adaptive adjusting clamping jaw, the clamping jaw is connected with a first linear bearing, the bottom of the first linear bearing is connected with a rubber-coated bearing, and the rubber-coated bearing is used for converting the rotating motion of the turntable into the linear motion of the clamping mechanism on the first guide shaft; according to the utility model, the relative distance of the clamping jaws is adjusted to adapt to different crystal ingot diameters, and meanwhile, the clamping jaws have the compression force of the springs, so that the crystal ingot can be clamped more firmly, the processing safety is improved, and the product damage rate is reduced.

The invention provides a composite substrate and a preparation method thereof, relates to the technical field of semiconductor chips, and solves the problem that a laser lift-off method is relatively low in utilization rate of a blank crystal ingot. The preparation method of the composite substrate comprises the steps of first bonding, first modification, first lift-off, second bonding and second lift-off; first bonding: bonding the first substrate and the second substrate; first modification: forming a plurality of modified layers on the first substrate, and forming the plurality of modified layers at different laser scanning intervals; first stripping: separating at the first target modified layer by using ultrasound to obtain a target substrate; the first target modified layer is the modified layer with the minimum laser scanning interval in the multiple modified layers; second bonding: bonding the target substrate with the third substrate to obtain an initial composite substrate; second stripping: separating at a second target modified layer of the initial composite substrate by using ultrasound; the modified layer with the minimum laser scanning interval is a second target modified layer. In the stripping step, the composite substrate is obtained.

The present application relates to a controllable crack silicon carbide laser stripping method, which comprises the following steps: first focusing a pulsed laser on a preset stripping surface inside a silicon carbide ingot, and repeatedly performing at least two laser scans along a preset laser scanning path, at least one laser parameter of the at least two laser scans is regulated so that the modified point spacing decreases with the number of scans, to sequentially form a plurality of discrete modified points and a plurality of continuous modified points on the preset stripping surface, an overlapping area is formed between at least two adjacent continuous modified points on the same laser scanning line, and then a crack extending along the cleavage surface of the silicon carbide ingot and passing through the discrete modified points and adjacent laser scanning lines is formed in the overlapping area, and then the silicon carbide ingot is stripped along the preset stripping surface to obtain a wafer and a remaining ingot. The present application has the advantages of uniform and consistent modification depth, improved wafer surface quality, stable and controllable process, and adaptation to large-scale production.

The invention relates to a high-intensity focused ultrasound-assisted laser lift-off method, and belongs to the technical field of silicon carbide wafer lift-off. The method comprises the following steps: a, forming a modified layer: providing a silicon carbide crystal ingot, positioning a laser focus point F of a pulse laser ray L at a preset depth in the silicon carbide crystal ingot by adopting the pulse laser ray L with the wavelength permeable to the silicon carbide crystal ingot, and forming the modified layer in the silicon carbide crystal ingot by relatively moving the silicon carbide crystal ingot and the laser focus point F; and b, a wafer stripping step: providing a high-intensity focused ultrasound generating device. According to the invention, the fundamental innovation of the stripping mechanism is realized, the stripping efficiency is high, the action position is accurate, and the damage is more controllable; energy is highly concentrated and precisely acted, energy dispersion is avoided, and the stripping precision is improved; process integration is achieved through synchronous machining, the problems of secondary clamping, interface re-healing and the like are avoided, and efficiency and consistency are improved; the thermal damage and the mechanical damage are obviously reduced; by adjusting the focus position, the system can adapt to complex structures and deep modification.

The invention discloses a processing method of a silicon carbide wafer and the silicon carbide wafer. The processing method comprises the following steps: carrying out surface pretreatment on a silicon carbide crystal ingot to remove a graphite layer on a first surface of the silicon carbide crystal ingot; the second surface is ground, so that the flatness of the second surface is smaller than or equal to 0.01 mm; and the first surface is ground, so that the flatness of the first surface is smaller than or equal to 0.01 mm. The steps are sequentially carried out, so that the silicon carbide loss is reduced, the processing quality and the surface precision are improved, and the silicon carbide wafer with the surface roughness of 0.01-0.2 mu m can be obtained without the assistance of a subsequent grinding and polishing process. The machining method can adapt to the geometrical characteristics of the irregular silicon carbide crystal ingot, and the material utilization rate and the machining safety are both considered.

The utility model relates to a non-contact crystal ingot resistivity measuring device, which comprises an equipment support, a linear module and a jacking rotating mechanism, wherein the linear module and the jacking rotating mechanism are arranged on the equipment support; the workpiece carrying table is arranged at the moving end of the linear module, the workpiece tray is arranged at the output end of the jacking rotating mechanism, and the resistivity probe is installed on the equipment support in the mode that the direction of the detection end is the same as the jacking direction of the jacking rotating mechanism. The moving path of the workpiece carrying table sequentially passes through the workpiece tray and the resistivity probe, and the workpiece carrying table is provided with a strip-shaped measuring opening for the workpiece tray and the resistivity probe to penetrate through. According to the utility model, the workpiece tray and the resistivity probe are arranged on the same side, and the movable workpiece carrying table is assisted to drive the workpiece to feed, so that the non-contact measurement of the resistivity of the workpiece and the workpiece transposition are realized, the resistivity value corresponding to each coordinate position of the workpiece can be output, the measurement is accurate, the operation is simple, and the full-coverage scanning measurement can be realized.

The utility model discloses a stripping device. The stripping device is used for stripping a wafer from a crystal ingot, and comprises a bearing unit used for bearing the crystal ingot; the stripping unit and the bearing unit are arranged at an interval, and the stripping unit is used for providing vibration for the crystal ingot and stripping the wafer from the crystal ingot; the sliding unit is connected with the bearing unit and can enable the bearing unit to move towards the stripping unit in the extending direction of the sliding unit, so that the stripping unit is in contact with the crystal ingot; the force measuring unit is arranged on the side, away from the stripping unit, of the bearing unit and is in communication connection with the stripping unit, the force measuring unit is used for detecting the pressure value borne by the bearing unit, and when it is detected that the pressure value borne by the bearing unit is larger than or equal to a preset pressure standard value, the stripping unit is driven to stop stripping the crystal ingot. Through the mode, the stripping device provided by the utility model can realize complete separation of the wafer from the crystal ingot by using the stripping unit.

The utility model discloses a wafer processing system, and belongs to the technical field of semiconductors. The wafer processing system comprises processing equipment, transportation equipment and transfer equipment, the transfer equipment comprises a plurality of switching units, the switching units are arranged on the same sides of a laser irradiation unit, a wafer stripping unit and a grinding unit, and each switching unit comprises a first moving module, a second moving module, two third moving modules and two adsorption components. The first moving module extends in the first direction, the second moving module is arranged on the first moving module and can move in the first direction, the two third moving modules are arranged on the two sides of the second moving module respectively and can move in the second direction, and the adsorption components are arranged on the third moving modules and can move in the third direction. According to the utility model, the cutting, stripping and grinding of the crystal ingot can be automatically completed, the production efficiency is improved, and the batch production of wafers is facilitated.

The invention relates to a method for growing an inclined-angle silicon carbide single crystal by a liquid phase method, and belongs to the technical field of silicon carbide single crystal production. The method is carried out by adopting a device for growing silicon carbide single crystals by a liquid phase method, the device comprises a wedge-shaped seed crystal support and wedge-shaped seed crystals, and the method comprises the following steps: arranging the wedge-shaped seed crystals on the wedge-shaped seed crystal support to form a normal crystal orientation seed crystal face, and then growing silicon carbide on the normal crystal orientation seed crystal face by the liquid phase method, obtaining a crystal ingot comprising wedge-shaped seed crystals and silicon carbide growth crystals; and taking down the crystal ingot from the wedge-shaped seed crystal support, and carrying out multi-line cutting by taking the inclined surface of the wedge-shaped seed crystal as a reference to obtain the inclined-angle silicon carbide single crystal. According to the method disclosed by the invention, the wedge-shaped seed crystal and the wedge-shaped seed crystal support form a positive crystal orientation seed crystal face for liquid phase growth, and then multi-line cutting is carried out to obtain the inclined-angle silicon carbide single crystal, the multi-line cutting does not need a crystal orientation step, an inclined-angle single-line cutting or flat grinding process can be reduced, the processing time is saved, and a new wedge-shaped seed crystal can be obtained for cyclic utilization.

The application discloses a kind of eccentric processing devices for removing seed crystal edge defects, more particularly to remove seed crystal edge defect technical field including equipment box and positioning assembly, the inside fixed mounting of the equipment box has output motor, the top of the adjusting mechanism is fixedly installed with clamping mechanism, the clamping mechanism side is movably installed with polishing mechanism.The eccentric processing device for removing seed crystal edge defects is centered by the clamping mechanism, and the positioning assembly and adjusting mechanism are clamped, and the displacement distance of the polishing mechanism is limited by the limiting mechanism, so that the polishing mechanism can stop when it is displaced to the remaining outer wall, and the crystal ingot is eccentrically rotated, and the polishing mechanism is always displaced towards the center of the crystal ingot to be retained and will stop extruding when it contacts the outer wall of the position to be retained.The device can retain the high-quality area of the crystal ingot and effectively remove the edge defects, greatly saving the cost of crystal ingot scrap due to edge defects.

A method for producing silicon carbide, SiC, epitaxial wafers in a wafer growth system (1) comprising an outer container, an insulating container arranged inside the outer container, a growth container (2) arranged inside the insulating container, and a heating arrangement arranged outside the outer container to heat an inside of the growth container (2). The method comprises providing a source material (3) of polycrystalline SiC in the growth container (2), providing a substrate (4) of monocrystalline SiC in the growth container (2) substantially parallel to the source material (3), the substrate (4) having a doping concentration of ≤5—1016 cm−3, increasing the temperature in the growth container (2) to a sublimation temperature of the source material (3), maintaining the temperature in the growth container (2) until a conductive layer (6) of monocrystalline SiC having a thickness of ≥10 μm and having a doping concentration of ≥1·1018 cm−3 has grown on the substrate (4). The substrate (4) and the grown conductive layer (6) together define an epitaxial boule. The method further comprises cooling the epitaxial boule to room temperature, and slicing the epitaxial boule, through the substrate (4) in a plane substantially parallel to the grown conductive layer (6), into an excess substrate (8) and an epitaxial wafer comprising a substrate layer (7) having the grown conductive layer (6) thereon.

The present invention provides a wafer manufacturing method that reliably forms a separation layer capable of discharging gas generated inside the workpiece in the outer peripheral region of the workpiece, while reducing the power of the laser beam irradiated during the formation of the separation layer. [Solution] A wafer manufacturing method comprises a holding step S1 of holding an ingot 11; a first separation layer formation step S2 of forming a separation layer 15 in the outer peripheral region of the ingot 11 by irradiating the outer peripheral region of the ingot 11 with a laser beam; a second separation layer formation step S3 of forming a separation layer 15 in the inner region of the ingot 11 by irradiating the inner region of the ingot 11 with a laser beam; and a separation step S4 of separating the wafer W from the ingot 11. The first separation layer formation step S2 includes an inner processing step S21 of forming a separation layer 15 at an inner position in the outer peripheral region, and an outer processing step S22 of forming a separation layer 15 at a position outside the inner position.

The utility model discloses a crystal ingot stripping device, and relates to the technical field of crystal ingot stripping, the crystal ingot stripping device comprises an ultrasonic mechanism, a self-adaptive adsorption mechanism and a displacement mechanism, the ultrasonic mechanism comprises an ultrasonic generator and a vibration plate, and the ultrasonic generator is connected with the vibration plate to drive the vibration plate to generate ultrasonic vibration; the self-adaptive adsorption mechanism comprises a supporting plate, a guide rod, an elastic piece and a first adsorption piece, the supporting plate is provided with a guide channel, the guide rod is movably connected with the guide channel, one end of the guide rod is connected to the first adsorption piece, and the other end of the guide rod is provided with a limiting part to limit the guide rod to leave the guide channel; a gap is formed between the inner wall of the guide channel and the outer wall of the guide rod, one end of the elastic piece is connected with the first adsorption piece, the other end of the elastic piece is connected with the supporting plate, and the first adsorption piece is used for adsorbing crystal ingots; and the displacement mechanism is connected with the self-adaptive adsorption mechanism. According to the technical scheme provided by the utility model, the crystal ingot can be stripped with higher quality and higher efficiency.

Disclosed herein are a furnace and method for growing high temperature oxide crystals. The furnace includes a cylindrical furnace wall, an induction coil disposed within the cylindrical furnace wall, a quartz tube disposed within the induction coil, a refractory liner disposed within the quartz tube, and a crucible disposed within the refractory liner, the crucible including a melt therein. A lid is placed on the crucible. An asymmetric configuration of at least one of the crucible, refractory liner, quartz tube, induction coil, and lid within the cylindrical furnace wall creates a thermal gradient that causes a cold point in the melt to migrate from a first position to a second position of the melt. A rod having a seed crystal at an end thereof is lowered into the crucible to lift the ingot from the melt via the seed crystal from the first position.

This invention discloses a high-precision automatic segmentation and ring wire cutting device for silicon carbide wafers, specifically relating to the field of ring wire cutting technology. The device includes a protective housing, on one side of which a PLC controller is fixedly installed. An operating frame is fixedly installed inside the protective housing, and two feed frames are arranged on the top surface of the operating frame. By symmetrically arranging annular diamond wires on both sides of the operating frame, the silicon carbide ingot is placed between the two annular diamond wires. Combined with a dual-sided synchronous feed mechanism driven by forward and reverse threaded screws, the feed frames on both sides maintain the same feed speed and displacement during cutting. When the annular diamond wires on both sides simultaneously cut into the ingot, the cutting forces are equal in magnitude and opposite in direction, canceling each other out inside the ingot and preventing additional bending moments. This structure effectively solves the problems of ingot bending and deformation due to uneven force during unilateral cutting, and the easy initiation of cracks in high-stress areas at the edges, reducing the cracking risk of ultra-hard and brittle silicon carbide materials during the cutting process.

The invention belongs to the technical field of glass processing, relates to processing of an atomic clock microwave cavity, and relates to a tool and a method for high-precision processing of a large-size thin-wall glass cavity. The two ends of the glass crystal ingot are cut to be flat, and the parallelism of the two end faces after cutting is smaller than or equal to 0.05 mm; a first blank of a barrel-shaped structure is manufactured in the flatly-cut end face through drilling; milling and grinding the first blank to obtain a second blank; and the second blank is polished through the tool, and then the workpiece is obtained. The tool comprises a polishing main shaft, a top roller and a driving mechanism. According to the method provided by the invention, high-precision, high-efficiency and high-reliability processing can be carried out on the large-size thin-wall glass microwave cavity, so that the processing quality of the cavity and the performance of an atomic clock are improved, and the method plays an important role in the aspects of a satellite navigation system, deep space exploration and spacecraft orbit determination, information network synchronization, a national time frequency system and the like.

An ingot puller apparatus includes a crucible assembly for holding a silicon melt, a crystal puller housing that defines a growth chamber, the crucible assembly being disposed within the growth chamber, a pulling mechanism including a seed cable, and a cleaning tool for cleaning the seed cable. The cleaning tool includes a main body defining a slot that extends through the main body for receiving the seed cable, a nozzle connected to the main body for directing a pressurized fluid at the seed cable, and a discharge conduit connected to the main body for evacuating fluid discharged from the nozzle. The main body is attached to the crystal puller housing.

This application discloses a method for processing silicon carbide wafers and the silicon carbide wafers themselves. The processing method includes surface pretreatment of a silicon carbide ingot to remove a graphite layer from a first surface; grinding a second surface to achieve a flatness ≤0.01 mm; and grinding the first surface to achieve a flatness ≤0.01 mm. By performing these steps sequentially, this application reduces silicon carbide loss while improving processing quality and surface accuracy, obtaining silicon carbide wafers with a surface roughness of 0.01 μm to 0.2 μm without the need for subsequent grinding and polishing processes. This processing method can adapt to irregular silicon carbide ingot geometry, balancing material utilization and processing safety.

The invention relates to the technical field of semiconductor silicon wafer manufacturing, in particular to an automatic silicon wafer cutting direction morphology detection method based on coordinate transformation, which comprises the following steps of: S1, automatically measuring and recording a deflection angle phi of a Notch mark relative to a set datum line by bonding equipment; uploading the deflection angle phi and the corresponding crystal ingot batch identification to an MES system database; s2, after a control system of the testing machine obtains the batch identification of the silicon wafers, a request is automatically initiated to an MES system, and the Notch deflection angle phi corresponding to the batch identification is inquired; s3, the control system of the testing machine automatically calculates a corresponding silicon wafer front scanning datum line angle theta under the coordinate system of the testing machine according to the bonding angle phi fed back by the MES system, and the testing machine controls a scanning mechanism of the testing machine to automatically rotate to the angle theta by taking Notch as 0 degree for positioning; and S4, the testing machine automatically completes flatness and morphology measurement of the front surface of the silicon wafer along the set scanning path.

The utility model discloses a crystal ingot cutting device, which belongs to the field of cutting devices and comprises a cutting table, a cutting mechanism is arranged on the top surface of the cutting table, and the cutting mechanism comprises a rotating motor, a cutting saw blade, a first air cylinder, a concave plate, a screw rod, a servo motor, a concave seat, a second air cylinder and a pushing plate. The rotating motor is fixedly connected to the top face of the supporting seat on the left side of the top face of the cutting table, the cutting saw blade is fixedly connected to the output end of the rotating motor, symmetrical first air cylinders are fixedly connected to the top face in the cutting table, and the purpose of ensuring the thickness consistency of crystal ingot wafers obtained after cutting every time can be achieved through the arranged cutting mechanism; the cutting device is simple in structure and convenient to operate, the cutting precision is improved, a traditional manual cutting mode can be replaced, the cutting operation is simple and convenient, meanwhile, the cutting thickness of the crystal ingot wafer can be adjusted according to the machining requirement, the crystal ingot cutting machining efficiency is improved, and the practicability of the cutting device is improved.