196 results about "Boule" patented technology

A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source environment producing growth of gallium nitride on the GaN seed wafer, thereby forming the GaN boule. The GaN source environment in various implementations includes gallium melt in an ambient atmosphere of nitrogen or ammonia, or alternatively, supercritical ammonia containing solubilized GaN. The method produces single crystal GaN boules >10 millimeters in diameter, of device quality suitable for production of GaN wafers useful in the fabrication of microelectronic, optoelectronic and microelectromechanical devices and device precursor structures therefor.

Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot 10 is implanted ion beam 23 to generate lattice defects in a direction defined by the crystal axes that corresponds to the cleavage plane. Cleavage is generated by applying a shock by a knife edge to the position of the lattice having a cutting face as a cleavage plane. Production time of waters is reduced with a more numbers of sliced wafers from one ingot.

The invention provides a flow guide cylinder for a monocrystal silicon growth furnace, which includes a tapered flow guide inner cylinder and a tapered flow guide outer cylinder, a heat preservation layer filled with heat preservation carbon felt is disposed therebetween. A heat insulation layer made from metal molybdenum or tungsten is disposed between the outer cylinder and the heat preservation layer. The tapered inner cylinder is used for absorbing radiation heat from a crystal ingot and then cooling the crystal ingot by means of gas rectifying to increase axial temperature gradient of the crystal ingot. Meanwhile, by means of the flow guide cylinder to rectify the gas, the flow speed of the gas is increased to reduce the partial pressure of SiO at liquid level of the melt, thereby reducing oxygen content in the melt. The flow guide cylinder can improve the quality of the crystal ingot, can accelerate growth of the crystal and can reduce production cost. The invention also provides an application method of eliminating polycrystal particles in quartz crucible walls by means of the flow guide cylinder.

The invention discloses a jet-assisted multi-pulse-width laser peeling method for a crystal ingot. The jet-assisted multi-pulse-width laser peeling method for the crystal ingot comprises the followingsteps: a laser machining system runs according to a first parameter, and a laser beam of the laser machining system is focused onto a first plane in a crystal ingot in the vertical direction; the laser beam is controlled to move according to a preset processing track until a first modified layer is machined on the crystal ingot by taking the first plane as a center; the laser machining system runs according to a second parameter, and the laser beam of the laser machining system is focused onto a second plane in the crystal ingot in the vertical direction, the laser beam is controlled to moveaccording to a preset processing track, a jet device is started simultaneously, and a fluid is jetted to the second plane of the crystal ingot in the horizontal direction; and the jet device continuesto run, and the crystal ingot is rotated around the central axis of the crystal ingot until a second modified layer is machined on the crystal ingot by taking the second plane as a center. The jet-assisted multi-pulse-width laser peeling method for the crystal ingot mainly solves the problem of dispersion of a crystal ingot peeling procedure; and the machining process is continuous, so that the machining efficiency of crystal ingot peeling is increased.

The invention provides a polycrystalline silicon material screening and crucible filling method. The method is characterized in that a vibration screen is utilized for carrying out multi-layer screening on a polycrystalline silicon material, the screened-out polycrystalline silicon material is directly added into a quartz crucible according to specifications and dimensions, in-situ quartz crucible filling is achieved, operation time is shortened, working efficiency is improved, the dimension range of the polycrystalline silicon material can be precisely controlled, the crucible filling density is improved, influences caused by gas and pinholes on crystal ingot quality in the crystal growth process are reduced, and crystal ingot quality is improved; in addition, the problem that crystal ingot quality is affected by pollution caused by hand charging can be avoided.

The invention discloses a mini lamp bead, a manufacturing method, a backlight source and display equipment, and relates to the technical field of display. The mini lamp bead comprises a light-emittingsource and a micro lens covering the light-emitting source. The micro lens is provided with a first light-emitting surface for realizing upward transmission of light and a second light-emitting surface for realizing lateral transmission of light. The backlight source comprises a substrate, and mini lamp beads are arranged on the substrate in an array mode. The display equipment comprises the backlight source. The manufacturing method comprises the steps of manufacturing a crystal ingot; cutting the crystal ingot into a wafer; generating an epitaxial layer on the wafer; manufacturing an electrode on the epitaxial layer to form an LED chip; and a base and a micro lens are additionally arranged on the LED chip. Lateral light emitting of the mini lamp beads can be achieved, the density of themini lamp beads on the backlight source is reduced, and then cost and power consumption are reduced.

The invention relates to a SiC single crystal growth device and a liquid phase epitaxy SiC single crystal growth method. According to the SiC single crystal growth device, the top and the bottom of a furnace body of a high-temperature induction heating furnace are correspondingly and coaxially provided with a seed crystal shaft and a rotating shaft which can rotate oppositely and reversely, and the first end of the rotating shaft is fixed to the bottom of a graphite crucible; a first non-carbon crucible is arranged in the graphite crucible, and a second non-carbon crucible is fixed at the first end of the seed crystal shaft; a SiC crystal ingot and Fe powder serving as a cosolvent are respectively accommodated in the first non-carbon crucible from bottom to top; SiC seed crystals are accommodated in the second non-carbon crucible; the temperature of the high-temperature induction heating furnace is raised, argon is loaded when the temperature is raised to 800-1000 DEG C, and then SiC grows in the argon atmosphere of 1500-1700 DEG C; and along with the rise of the temperature, the crystal ingot SiC is dissolved in the molten Fe solvent to form a Fe solution, and then the Fe solution is transmitted to the SiC seed crystal. According to the SiC single crystal growth device provided by the invention, the growth structure and the thermal field distribution can be improved, and the problems of crystal position dislocation and crucible fragmentation are avoided.

The invention provides a single crystal furnace having an auxiliary material adding mechanism and an application thereof. The auxiliary material adding mechanism is installed in the single crystal silicon growth furnace and is provided with an individual weighing device, so that the addition amount of auxiliary materials can be monitored and controlled in real time during auxiliary material addition, thereby achieving accurate control of doping concentration of the single crystal silicon. The single crystal furnace can stabilize axial resistivity of the single crystal silicon and can satisfy crystal ingot growth of the single crystal furnace with special doping requirement.

Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.

Systems and methods that reduce the overall cost of producing a silicon ingot are provided herein. More specifically, one or more surface pieces may be sliced from a silicon boule in relation to a plurality of nodes at a particular orientation. These one or more surface pieces may then be formed into one or more seeds having a specific length, width and thickness usable in a silicon ingot growth process. By utilizing these pieces to form one or more seeds, pieces of a boule which would have been previously discarded may now be used to form high quality seeds for use in a silicon ingot grow process.

The embodiment of the invention provides a crystal ingot stripping method and a crystal ingot stripping device, and belongs to the technical field of semiconductor substrate preparation. The crystal ingot stripping method comprises the steps that a laser beam is focused at a preset depth in a crystal ingot in magnetorheological fluid, and scanning processing of a preset stripping surface at the preset depth of the crystal ingot is completed through the laser beam so that a modified layer can be formed on the preset stripping surface; and a magnetic field is applied to the magnetorheological fluid, so that the magnetorheological fluid moves relative to the crystal ingot to carry out polishing to remove the modified layer. The crystal ingot stripping device is used for carrying out the crystal ingot stripping method. Polishing can be achieved in the laser stripping process, and the machining efficiency can be improved under the condition that the stripping surface quality is effectivelyimproved.

The invention discloses a method for growing yttrium iron garnet crystals by adopting a composite fluxing agent. The yttrium iron garnet (Y3Fe5O12, YIG for short) crystal is an important magneto-optical material and is prepared by the following steps: accurately weighing, mixing, grinding and sintering raw materials to obtain a polycrystal material, crushing the polycrystal material, adding the composite fluxing agent, carrying out ball milling to obtain a mixed material, filling a crucible with the mixed material, heating the crucible filled with the material to a set temperature, keeping thematerial at the temperature to obtain high-temperature molten crystal solution, then carrying out slow cooling until the solution in the crucible is completely cooled and crystallized, conducting cooling to room temperature to obtain a crystal ingot, and removing the fluxing agent by adopting a mechanical stripping and chemical corrosion method to finally obtain the crystal. According to the invention, through the lead-free composite fluxing agent, environmental pollution caused by lead and the corrosion to a platinum crucible are greatly reduced, the growth temperature of the crystal is effectively reduced, and the bulk single crystal with a larger size can be obtained.

The invention relates to the field of silicon carbide single crystal wafer manufacturing, and discloses an n-type silicon carbide single crystal wafer stripping method and stripping device. The n-type silicon carbide single crystal wafer stripping method comprises the steps of providing an n-type silicon carbide crystal ingot comprising an amorphous layer and a single crystal layer located on the surface of the amorphous layer; soaking the n-type silicon carbide crystal ingot into an etching solution, taking the n-type silicon carbide crystal ingot as an anode based on a three-electrode system, and arranging a cathode and a reference electrode in the etching solution; irradiating the n-type silicon carbide crystal ingot by using incident light with a specific wavelength, wherein the incident light irradiates the surface of the amorphous layer to form a photo-generated hole-electron pair; and in the irradiation process, providing positive constant potential for the n-type silicon carbide crystal ingot, so as to enable photo-induced electrons on the surface of the amorphous layer to be transferred to a cathode along current to react with etching liquid, and the etching liquid to selectively etch the surface of the amorphous layer, and further to achieve stripping of the single crystal layer and obtain the n-type silicon carbide single crystal wafer. The surface or subsurface of the single crystal wafer obtained by the method has no damage layer and no stress residue, and is simple to operate and low in cost.

The invention provides a tellurium-zinc-cadmium crystal surface polishing device used for solving the problem that the manual grinding efficiency is low in the soft and brittle tellurium-zinc-cadmiumcrystal ingot surface polishing process. The tellurium-zinc-cadmium crystal surface polishing device comprises a rack, a vertical and horizontal transmission mechanism, a crystal clamping and rotatingmechanism and an abrasive belt rotating machining mechanism, the vertical and horizontal transmission mechanism and the crystal clamping and rotating mechanism are fixed to the rack, and the abrasivebelt rotating machining mechanism is fixed to the vertical and horizontal transmission mechanism through a support frame; the crystal clamping and rotating mechanism is used for clamping a to-be-machined crystal and driving the to-be-machined crystal to rotate according to the set speed under the control of a first motor; the vertical and horizontal transmission mechanism is used for controllingthe abrasive belt rotating machining mechanism to move in the horizontal direction and in the vertical direction; and the abrasive belt rotating machining mechanism is used for being close to the to-be-machined crystal under the control of the vertical and horizontal transmission mechanism and rotating under the control of a second motor to polish the surface of the to-be-machined crystal.

The invention discloses a sapphire single crystal growth method, which relates to the technical field of crystal growth, and comprises the following steps of: (1) putting aluminum oxide into a crucible adhered with seed crystals, putting the crucible on a heat exchanger, closing a furnace body, and vacuumizing or performing positive pressure on the furnace body; (2) introducing helium into the heat exchanger, and starting a graphite heater for heating until the aluminum oxide begins to melt; (3) starting to melt the raw materials, introducing carrier gas and mixed gas from a gas inlet pipeline, and discharging the gas from a gas outlet pipeline; (4) raising the temperature in the furnace body until the aluminum oxide is completely molten, increasing the flow of the heat exchanger after thetemperature is stable, and starting to grow the crystal until the crystal growth is finished; and (5) reducing the temperature in the furnace body to the melting point temperature of the crystal, closing the gas inlet pipeline and the gas outlet pipeline, and taking out the crystal ingot after the furnace body is cooled. The method has the advantages that the crystal quality can be improved, andthe sapphire single crystal with higher quality can be grown when the pressure of the furnace body is maintained at negative pressure or positive pressure during crystal growth.

The invention discloses a preparation method of a bismuth telluride-based block thermoelectric material. According to the invention, the method comprises the steps: combining a magnetic field auxiliary zone melting process, a layer-by-layer covering pressurization and vibration auxiliary orientation process, a cold isostatic pressing process, a vacuum sintering process and a hot isostatic pressingprocess; taking high-purity tellurium, bismuth, antimony, selenium and the like as raw materials; preparing a bismuth telluride crystal ingot by adopting a zone-melting method; crushing, grinding andsieving the crystal ingot, pressing sieved powder into a block material by utilizing a layer-by-layer covering pressurization and vibration-assisted orientation process, and finally preparing the textured block thermoelectric material which has good orientation and is close to complete compactness by combining a cold isostatic pressing process, a vacuum sintering process and a hot isostatic pressing process. According to the preparation method, the grain orientation of bismuth telluride can be remarkably improved, the obtained bismuth telluride-based block material has good thermoelectric performance and machining performance, and the preparation method is high in material utilization rate, easy to implement, high in preparation efficiency and good in application prospect.