454 results about "Boule" patented technology

The invention discloses a laser processing device, a silicon carbide crystal ingot cutting method and a laser processing system. The laser processing device comprises a laser used for emitting a laser beam with preset laser parameters; the beam splitting element is used for splitting the laser beam into a plurality of sub-beams arranged along a preset direction; the spherical aberration compensation element is used for performing spherical aberration compensation on the plurality of sub-beams and outputting a plurality of spherical aberration compensation beams; and the scanning mechanism is used for focusing the plurality of spherical aberration compensation light beams and cutting the silicon carbide crystal ingot according to a preset cutting path and a preset cutting speed by utilizing the plurality of focused spherical aberration compensation light beams. Spherical aberration compensation is carried out on the sub-beams, the spot size of the focused sub-beams in the silicon carbide crystal ingot in the optical axis direction can be remarkably reduced, the length of a growth area of microcracks is reduced, and then a high-quality silicon carbide wafer is obtained. In addition, the coverage area of the plurality of sub-beams on the surface of the silicon carbide crystal ingot is larger, so that the cutting efficiency is improved.

The invention discloses a laser processing device, a silicon carbide crystal ingot cutting method and a laser processing system. The laser processing device comprises a laser used for emitting Gaussian beams with preset laser parameters; the beam shaping element is used for shaping the Gaussian beam into a linear beam; and the scanning mechanism is used for focusing the linear light beam and cutting the silicon carbide crystal ingot by utilizing the focused linear light beam according to a preset cutting path and a preset cutting speed. Compared with the focused Gaussian beam, the focused linear beam has a small spot size in the direction of the optical axis, which means that the action depth of the focused linear beam in the silicon carbide crystal ingot is shallower, so that the length of the growth area of the microcracks generated in the direction of the optical axis in the machining process is reduced, and the machining precision is improved. And therefore, the roughness generated on the surface of the silicon carbide wafer is reduced, and the quality of the silicon carbide wafer is improved.

The invention discloses a silicon carbide crystal ingot double-light-spot laser slicing method and device and application of the silicon carbide crystal ingot double-light-spot laser slicing method and device. The silicon carbide crystal ingot double-light-spot laser slicing method comprises the steps that a high-energy laser beam is split into two sub-laser beams, the two sub-laser beams are focused on a selected depth interface in a silicon carbide crystal ingot, and the energy density of light spots formed by focusing of the sub-laser beams is larger than an ablation threshold value of the silicon carbide crystal ingot; two spaced light spots are used for conducting multiple times of scanning machining on the silicon carbide crystal ingot, each time of scanning is conducted in the first direction, multiple times of scanning is conducted in the second direction, so that a modification and crack area is formed on a selected depth interface, the first direction is perpendicular to the second direction, and the second direction is perpendicular to the crystal direction of the silicon carbide crystal ingot; the bonding force of the modification and crack area of the silicon carbide crystal ingot is smaller than that of other areas, and the silicon carbide crystal ingot can be separated from the modification and crack area.

The present invention provides a method and apparatus for laser stripping a silicon carbide ingot. The method first transmits an ultrashort pulse laser beam through the first end face of the silicon carbide ingot and focuses it on a set depth layer of the ingot. A cavity-modified region and a crack-modified region are generated above the set depth layer, respectively, and scanned to form the cavity-modified layer and the crack-modified layer. A short pulse laser beam then transmits the second end face of the silicon carbide ingot and focuses it on the cavity-modified region. The beam scatters and propagates within the cavity-modified region, causing the heat from the short pulse laser beam to act on the cavity-modified region, causing cracks within the crack-modified region to grow laterally outward. Scanning is then performed to connect cracks within adjacent cavity-modified regions within the cavity-modified layer through lateral growth. This reduces the amount and length of cracks in the modified layer extending longitudinally along the silicon carbide ingot, increases the number and length of lateral crack growth, reduces cutting loss, and reduces waste.

The invention relates to a semiconductor wafer generation method, which comprises the following steps of: firstly, setting laser scanning times, and then respectively setting a scanning path and a dot spacing of each laser scanning; determining a laser scanning speed and a laser pulse repetition frequency based on a calculation rule preset for each laser scanning, and determining a corresponding modified point diameter, laser pulse energy and an offset distance of a laser focus relative to a preset stripping surface; the pulse laser is focused on a preset stripping surface in the crystal ingot or below the preset stripping surface, and n times of laser scanning are carried out, so that modified points and cracks are sequentially formed on the preset stripping surface; and stripping the crystal ingot along the preset stripping surface to obtain a wafer and a residual crystal ingot. The method not only can eliminate burrs at the edge of the wafer, but also can further reduce the material loss of laser stripping, and has the advantages of simple process conditions, good modified layer morphology, low wafer stripping difficulty and suitability for large-scale industrial application.

The invention relates to the technical field of silicon carbide single crystal growth, in particular to a high-purity semi-insulating silicon carbide single crystal for an optical element and a growth process thereof.The growth process includes the steps that S1, silicon carbide powder, a graphite crucible and the like are assembled to form a thermal field device, the thermal field device is placed in an induction furnace, room-temperature furnace washing treatment and low-temperature furnace washing treatment are sequentially carried out, and the silicon carbide powder is obtained; carrying out thermal field impurity removal treatment; s2, assembling the silicon carbide seed crystal and the impurity-removed thermal field device, raising the temperature in the induction furnace, conveying high-purity argon or mixed gas of high-purity argon and high-purity hydrogen into the induction furnace, and performing crystal growth; s3, after crystal growth is finished, high-temperature and high-pressure annealing treatment is carried out firstly, then furnace cooling treatment is carried out, and the high-purity semi-insulating silicon carbide crystal ingot for the optical element is obtained. The silicon carbide crystal ingot with excellent light transmission performance and high resistivity is obtained by selecting specific raw materials, reasonably designing an assembly mode and combining processes of thermal field impurity removal, high-temperature and high-pressure annealing and the like.

The invention discloses a crystal ingot laser modification process and a laser processing device, and belongs to the technical field of semiconductors. The crystal ingot laser modification technology comprises the following steps that light gathering points of at least two modification laser beams with permeable wavelengths are positioned at the position with the preset depth from the first face of a crystal ingot, each light gathering point forms a corresponding modification part, at least two modification parts are arranged at intervals along the C face, cracks spread along the C face from the modification parts, and the cracks are formed in the first face of the crystal ingot. The cracks formed by the adjacent modified parts are mutually connected to form a group of cracks; a cutting laser beam is adopted for cutting between two adjacent groups of cracks to form a cutting part, and the two ends of the cutting part are connected with the two groups of cracks respectively. According to the invention, the production efficiency is improved by increasing the width of the crack, stripping by a pressing mechanism is not needed, and the yield of the wafer is improved.

The invention relates to a SiC crystal ingot facet detection method based on Raman combined with resistivity detection, which comprises the following steps: S1, providing a silicon carbide workpiece, acquiring resistivity rho k of different detection areas on the surface layer of the workpiece based on a preset resistivity detection scanning path, and further preliminarily screening out resistivity abnormal areas; s2, on the basis of a preset Raman detection scanning path, obtaining the edge area on the surface layer of the workpiece, the Raman characteristic peak frequency omega ij of different detection points of the resistivity abnormal area obtained in the S1, a detection image, and an XY coordinate position on an XY plane perpendicular to the height direction of the workpiece; and S3, based on a preset n-rho inverse proportion function model of the doping concentration n and the resistivity rho, and a delta omega-n linear model of the Raman frequency shift delta omega and the doping concentration n, determining and associating the XY coordinate positions of the S2 and the corresponding resistivity rho ij, and constructing a resistivity distribution diagram of the surface layer of the workpiece. The method has the advantages of small detection error and short detection time.

The utility model discloses a wafer processing device, and belongs to the technical field of semiconductors. The wafer processing device comprises a carrying table, a shock insulation pad and an ultrasonic device, wherein the carrying table is used for carrying a crystal ingot with a modified layer; the ultrasonic device is arranged above the carrying table, the ultrasonic device can generate transverse vibration waves, and the transverse vibration waves are used for vibrating along the crystal ingot and enabling cracks of the modified layer to extend in the transverse direction; and the bottom of the carrying table is fixedly arranged on the shock insulation pad. According to the utility model, the cracks of the modified layer formed on the crystal ingot by the laser pulse grow and are connected along the transverse direction, the longitudinal growth of the cracks is avoided, the production efficiency of the modified layer is improved, the laser pulse does not need to be intensively emitted, and the wafer processing period is shortened.

The utility model provides a crystal ingot turnover device which comprises a turnover box, a lining is inserted in the turnover box, a plurality of V-shaped grooves used for storing crystal ingots are evenly formed in one face of the lining, and a plurality of round grooves used for storing the crystal ingots are evenly formed in the face, away from the V-shaped grooves, of the lining. First vent grooves are formed in the middle positions of the two parallel side faces of the lining, an insertion groove is formed in the middle position of one side face in each first vent groove, an insertion plate is inserted in each insertion groove, a round hole is formed in the middle position of the upper surface of each insertion plate, a column rod is installed in each round hole, and two vertical grooves are symmetrically formed in the upper surface of the lining. Threaded blind holes are formed in the two ends of the column rod, connecting rods are in threaded connection with the interiors of the threaded blind holes, and a cross rod is fixedly connected to the end, away from the column rod, of each connecting rod. The crystal ingot turnover box has the advantages that the specifications of turnover boxes used for storing crystal ingots of different specifications are uniform, and the management difficulty of the turnover boxes for storing the crystal ingots is lowered.

The invention relates to the technical field of wafer processing, in particular to a laser splintering method for improving consistency of crack propagation paths through recesses, which comprises the following steps: preparing a crystal ingot, preparing the recesses, irradiating the recesses with first laser, and forming initial cracks in the crystal ingot. The pits are formed in the surface of the crystal ingot, formation and extension of initial cracks are controlled through laser irradiation on the pits, the polishing and grinding thickness is reduced, and the utilization rate of the crystal ingot is increased. Laser energy is concentrated by the recesses, and local high temperature and high stress are generated at deeper positions of the crystal ingot, so that initial cracks are generated at preset positions and extend along preset directions, crack paths are accurately controlled, and irregular cracks are reduced. By controlling the position and the direction of the crack, crack offset and forking are avoided, material waste is reduced, the crystal ingot utilization rate and the production efficiency are improved, and the precision, the efficiency and the product quality of the laser splitting process are remarkably improved.

The invention relates to a multi-band laser confocal silicon carbide crystal ingot processing device and method, the multi-band laser confocal silicon carbide crystal ingot processing device comprises an objective table and a laser assembly, the laser assembly comprises a first laser, a second laser, a first reflecting mirror, a second reflecting mirror and a laser focusing mirror, the second wavelength laser and the second wavelength laser reflected by the second reflector and emitted by the second laser device are output in a common light path mode, and a to-be-machined crystal ingot on the objective table is machined through the laser focus lens; the objective table comprises an X-axis moving module, a Y-axis moving module, a C-axis module and a B-axis module, the C-axis module is used for driving the to-be-machined crystal ingot to rotate around the vertical center axis of the to-be-machined crystal ingot, and the B-axis module is used for driving the to-be-machined crystal ingot to swing in the vertical plane. The device can improve the laser processing efficiency, can cut the cylindrical crystal ingot, is simple in structure, easy to operate and control, low in cost and particularly suitable for cutting the silicon carbide crystal ingot with large thickness, high hardness and high precision.

GaAs IR window slabs having largest dimensions that are greater than 8 inches, and preferably greater than 12 inches, are grown using the Horizontal Gradient Freeze (HGF) method. Heat extraction is simplified by using a shallow horizontal boat that is only slightly deeper than the desired window thickness, thereby enabling growth of large slabs while also minimizing material waste and fabrication cost as compared to slicing and shaping thick plates from large, melt-grown boules. Single crystal seeds can be used to optimize the final orientation of the slabs and minimize secondary nucleation, thereby maximizing yield. A conductive doped GaAs layer can be applied to the IR window slab to provide EMI shielding. The temperature gradient during HGF can be between 1° C. / cm and 3° C. / cm, and the directional solidification can be at a rate of between 0.25 mm / h and 2.5 mm / h.

The embodiment of the invention provides a method and device for automatically controlling a semiconductor crystal ingot to enter a water tank, and relates to the technical field of semiconductor crystal ingot processing auxiliary equipment.The device comprises a rack, a lifting and transplanting device is arranged on the rack, a turnover positioning device is arranged on one side of the lifting and transplanting device, and a first conveying device is arranged on the other side of the lifting and transplanting device; the lifting transplanting device comprises a lifting mechanism, the lifting mechanism is arranged at the tail end of the first conveying device, a transverse moving mechanism is arranged above the lifting mechanism, the overturning positioning device comprises an overturning working frame, a lifting device is arranged on the overturning working frame, an overturning driving part is arranged on the lifting device, and the U-shaped conveying group is arranged on the other side of the overturning positioning device. A turnover workbench is arranged on the turnover driving part, a positioning tool is arranged on the turnover workbench, and the turnover driving part is a servo motor. The device has the effects that operation is stable, and the crystal ingot is prevented from being collided and damaged.

To provide a SiC ingot easily processed during laser processing.SOLUTION: A SiC ingot has a facet surrounded with the minimum area when setting a diameter to D and plan-viewed from a crystal growth direction. When setting the length of the first side of a virtual rectangle having a first side parallel to a <11-20>direction and a second side parallel to a <1-100>direction to Lx, Lx / D<0.3 is satisfied in a first end being an end in the crystal growth direction.SELECTED DRAWING: Figure 3

The invention discloses a high-efficiency low-loss preparation method of a single crystal silicon carbide wafer. The method comprises the following steps: A, grinding the surface of a single crystal silicon carbide ingot; b, the ultrafast pulse laser is modulated into N light spots, the N light spots are focused in the crystal ingot and distributed in the axial direction of the crystal ingot according to preset depth positions, and all the light spots are parallel to the horizontal direction; all the light spots are scanned at the same time, the scanning surface formed by the same light spot covers the cross section of the single crystal silicon carbide crystal ingot in the horizontal direction, and N laser modified layers are formed after scanning; c, carrying out stress-induced separation on the single crystal silicon carbide crystal ingot in the step B; and D, grinding the cutting surface of the single crystal silicon carbide wafer. According to the high-efficiency and low-loss preparation method of the single-crystal silicon carbide wafer, the preparation efficiency of the silicon carbide wafer is improved, meanwhile, the material loss of the single-crystal silicon carbide ingot is reduced, and the yield of the single-crystal silicon carbide ingot is improved.

Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.

The invention provides a silicon carbide crystal ingot laser cutting method and cutting system, belongs to the technical field of silicon carbide crystal ingot processing, and solves the problem of high silicon carbide crystal ingot laser cutting loss in the prior art. The cutting method comprises the following steps that the position of an operation station on a crystal ingot is obtained, and the operation station is a crystal ingot surface area facing a laser source; a scanning path and a target depth are set below the operation station, the first light beam is controlled to scan the target depth along the scanning path, and a focusing light spot of the first light beam is configured as a Gaussian light spot; crack information formed by the first light beam is obtained, the crack information comprises crack widths, and the crack widths are classified into the grade A, the grade B and the grade C in sequence from large to small; and determining a crack width level, and executing a corresponding crack control strategy. The second light beam is additionally arranged to follow the first light beam for synchronous scanning in a phase modulation mode, and the generated pressure stress can offset the original tensile stress so as to restrain crack propagation.

The invention relates to the technical field of silicon carbide wafer processing, and specifically to a low-loss silicon carbide wafer slicing method. The invention comprises the following steps: S1, taking a silicon carbide crystal ingot with a thickness of 3.5-6 cm, and cutting it into a silicon carbide crystal column with a thickness of 825-4000 μm by laser cutting; S2, using laser invisible cutting to form cracks on the silicon carbide crystal column obtained in step S1, forming a silicon carbide thin slice with a thickness of 80-200 μm and a silicon carbide thick slice with a thickness of 625-3920 μm on the silicon carbide crystal column, and then applying an adhesive on the silicon carbide thin slice. During slicing, only grinding loss is generated each time, and the loss generated when slicing silicon carbide is smaller. For each 1000 μm silicon carbide crystal column, 6 silicon carbide thin slices can be separated, which can not only separate more silicon carbide thin slices than the traditional multi-wire cutting technology, but also generate less loss, thereby effectively reducing the processing cost of the silicon carbide wafer.

The bidirectional laser silicon carbide crystal ingot machining device comprises a first laser assembly, a second laser assembly and a rotary table, in the first laser assembly, laser emitted by a first laser device sequentially passes through a first reflecting mirror and a first laser focusing mirror and then vertically and downwards reaches the rotary table and the second laser assembly; laser emitted by the second laser sequentially passes through a second reflecting mirror, a third reflecting mirror, a second laser focusing mirror and a fourth reflecting mirror and then vertically and upwards reaches the rotary table; the rotary table comprises a C-axis module, a B-axis module and a machining seat, the C-axis module is used for driving a to-be-machined crystal ingot to rotate, and the B-axis module is used for driving the crystal ingot to swing in a vertical plane; and a corresponding linear moving module is also configured. The device can effectively improve the laser processing efficiency, process the cylindrical crystal ingot, maximally utilize the raw materials and reduce the cost, and is simple in structure, easy to control and suitable for cutting the silicon carbide crystal ingot with large thickness, high hardness, high manufacturing cost and high precision.

After peel-off layers have been formed in a workpiece of monocrystalline silicon such as an ingot, a bare wafer, or a device wafer with use of a laser beam having a wavelength transmittable through monocrystalline silicon, a substrate is separated from the workpiece along the peel-off layers acting as separation initiating points. The process results in increased productivity for the manufacture of substrates, compared with a process of manufacturing substrates from a workpiece with use of a wire saw.

To provide an SiC ingot capable of realizing both of high quality and workability.SOLUTION: This SiC ingot has a step-flow growth region, and a facet. On a cross section passing through a center in a <11-20> direction, an inside boundary between the facet and the step flow growth region has: a first slope inclined in a [-1-120] direction with respect to a crystal growth direction; and a second slope inclined in a [11-20] direction with respect to the crystal growth direction. An inflection point between the first and second slopes is nearer a first end on a Si face side than a center position of ingot length.SELECTED DRAWING: Figure 1

To provide an SiC ingot easy to be laser-processed.SOLUTION: This SiC ingot is made of an SiC single crystal inclined by an offset angle from a (0001) face and crystal-grown from a first end toward a second end, and has a step-flow growth region, and a facet. On a cross section passing through a center in a <11-20> direction, an angle θ1 formed by an inside boundary between the facet and the step flow growth region and a crystal growth direction is 56° or less.SELECTED DRAWING: Figure 1

The invention belongs to the technical field of wafer processing, and particularly relates to a high-pressure liquid environment laser splinter crystal ingot separation method and device. And placing the crystal ingot in high-pressure liquid for ultrasonic treatment. And placing the crystal ingot subjected to laser splintering treatment in high-pressure liquid, and promoting microcracks generated by splintering of the crystal ingot to expand under the action of ultrasonic waves so as to complete wafer separation. The high-pressure liquid environment provides higher energy transfer efficiency, the cavitation effect of ultrasonic waves is enhanced, and the wafer separation efficiency is improved. Besides, in a high-pressure liquid environment, after liquid permeates into the crack, energy can be uniformly applied to the starting point and the end part of the crack in combination with the action of ultrasonic waves, so that the crack is more uniformly expanded; the uniform expansion not only improves the splitting effect, but also improves the overall separation quality of the wafer. By integrating the effects, the method has a good application prospect in the technical field of wafer processing.

The invention discloses an oxygen-enriched destressing crystal growth method and a crystal growth furnace, and relates to the technical field of crystal growth, and the oxygen-enriched destressing crystal growth method comprises the following steps: step 1, pre-treating a PMNT polycrystal material, and putting the pretreated PMNT polycrystal material into a crucible; 2, pre-flushing the growth furnace and creating an oxygen partial pressure environment; 3, raising the temperature in the growth furnace to melt and homogenize the PMNT polycrystal material in the crucible; step 4, the crucible moves downwards for directional solidification of the crystal, a solid-liquid interface is formed and stably moves upwards, and in the process, a dynamic regulation and control strategy is adopted in the growth furnace to control an oxygen-enriched environment to promote crystal growth, so that the crystal digests growth stress in the growth process, and formation of oxygen vacancies is inhibited; and step 5, after crystal growth is finished, gradient cooling is performed to room temperature in an oxygen-enriched environment, and a crystal ingot is obtained. Oxygen is used as a regulation and control tool, the stress problem caused by oxygen vacancy is physically solved, the color center and performance problems caused by oxygen vacancy are chemically solved, and the crystal growth quality is improved.

The invention relates to the technical field of semiconductor materials, in particular to a preparation method of a semi-insulating silicon carbide substrate, which comprises the following steps: mixing high-purity silicon powder and carbon powder according to a preset proportion to synthesize silicon carbide particles; performing crystal growth to obtain a silicon carbide crystal ingot; cutting, grinding and polishing the silicon carbide crystal ingot to obtain a silicon carbide single crystal substrate; and carrying out high-temperature annealing and impurity removal treatment on the silicon carbide single crystal substrate to obtain the high-purity semi-insulating silicon carbide substrate. Wherein in the cutting process, the silicon carbide crystal ingot is cut after being subjected to pre-annealing treatment; contact pressure data, temperature data, cutting speed data, cooling liquid flow and integrity data in the cutting process are collected, then the optimal contact pressure and the optimal cutting temperature are determined, and therefore the adjusting mode of cutting parameters is determined. The cutting quality is effectively improved, and the cutting time is shortened.

To continue to seek improved SiC wafers with larger dimensions and related solid-state devices while overcoming challenges associated with conventional SiC wafers.SOLUTION: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.SELECTED DRAWING: Figure 1B

The invention provides a silicon carbide crystal ingot defect detecting and cutting device based on optical coherence tomography, and belongs to the technical field of silicon carbide crystal ingot defect detecting and cutting. In order to solve the technical problems that after a traditional crystal ingot is cut, the detection efficiency is low, imaging is not timely, the imaging resolution is low, and the portability and the linkage performance are poor due to the fact that detection equipment and cutting equipment are separated, the adopted technical scheme is that the output end of an OCT module is connected with the input end of a sample arm module through a wire; the sample arm module is installed below the sample arm support through the sample arm lifting support, and supporting legs on the two sides of the sample arm support are installed on the base. A fixed seat is arranged right below the sample arm module, the fixed seat is mounted on the base through a lifting base, and a crystal ingot is placed on the fixed seat; rolling wheels are further arranged on the two sides of the fixing base and placed on the base, and a cutting line is further connected between the two rolling wheels; the method is applied to defect detection of the silicon carbide crystal ingot.

A method of slicing wafers from a monocrystalline semiconductor ingot includes attaching a circumferential edge of the ingot to a bond beam and positioning sacrificial disks adjacent longitudinal end faces of the ingot. One sacrificial disk is positioned adjacent each of the longitudinal end faces. The method also includes connecting the bond beam to a wire saw that includes a wire web and performing a slicing operation on the ingot by operating the wire saw to drive the wire web and move the bond beam and the ingot in a movement direction towards the wire web to slice the wafers from the ingot. The sacrificial disks operate to inhibit uncontrolled breakage of the wafers during the slicing operation

The invention provides a wafer stripping device and a control method thereof, and belongs to the technical field of semiconductor processing. The wafer stripping device comprises an ultrasonic water tank, wherein a liquid medium for transmitting ultrasonic waves is accommodated in the ultrasonic water tank; the ultrasonic generator is arranged in the liquid medium, and the radiating surface of the ultrasonic generator faces the top of the ultrasonic pool; the movement mechanism is used for installing the crystal ingot, so that the target end of the crystal ingot faces the ultrasonic water tank, the target end of the crystal ingot is close to the modified layer, the end face of the target end is parallel to the radiating surface of the ultrasonic generator, and the movement mechanism is further used for controllably driving the crystal ingot to rotate in the axial direction of the crystal ingot and move in a reciprocating mode in the horizontal direction; wherein the movement mechanism is used for driving the crystal ingot to rotate at a preset rotating speed and move along the horizontal direction at a preset speed, so that the energy of the ultrasonic generator continuously acts on the modified layer of the crystal ingot to strip the wafer. According to the wafer stripping device, the probability of wafer cracking can be remarkably reduced.