368 results about "Boule" patented technology

The invention discloses a silicon carbide crystal ingot double-light-spot laser slicing method and device and application of the silicon carbide crystal ingot double-light-spot laser slicing method and device. The silicon carbide crystal ingot double-light-spot laser slicing method comprises the steps that a high-energy laser beam is split into two sub-laser beams, the two sub-laser beams are focused on a selected depth interface in a silicon carbide crystal ingot, and the energy density of light spots formed by focusing of the sub-laser beams is larger than an ablation threshold value of the silicon carbide crystal ingot; two spaced light spots are used for conducting multiple times of scanning machining on the silicon carbide crystal ingot, each time of scanning is conducted in the first direction, multiple times of scanning is conducted in the second direction, so that a modification and crack area is formed on a selected depth interface, the first direction is perpendicular to the second direction, and the second direction is perpendicular to the crystal direction of the silicon carbide crystal ingot; the bonding force of the modification and crack area of the silicon carbide crystal ingot is smaller than that of other areas, and the silicon carbide crystal ingot can be separated from the modification and crack area.

The present invention provides a method and apparatus for laser stripping a silicon carbide ingot. The method first transmits an ultrashort pulse laser beam through the first end face of the silicon carbide ingot and focuses it on a set depth layer of the ingot. A cavity-modified region and a crack-modified region are generated above the set depth layer, respectively, and scanned to form the cavity-modified layer and the crack-modified layer. A short pulse laser beam then transmits the second end face of the silicon carbide ingot and focuses it on the cavity-modified region. The beam scatters and propagates within the cavity-modified region, causing the heat from the short pulse laser beam to act on the cavity-modified region, causing cracks within the crack-modified region to grow laterally outward. Scanning is then performed to connect cracks within adjacent cavity-modified regions within the cavity-modified layer through lateral growth. This reduces the amount and length of cracks in the modified layer extending longitudinally along the silicon carbide ingot, increases the number and length of lateral crack growth, reduces cutting loss, and reduces waste.

The invention relates to the technical field of silicon carbide single crystal growth, in particular to a high-purity semi-insulating silicon carbide single crystal for an optical element and a growth process thereof.The growth process includes the steps that S1, silicon carbide powder, a graphite crucible and the like are assembled to form a thermal field device, the thermal field device is placed in an induction furnace, room-temperature furnace washing treatment and low-temperature furnace washing treatment are sequentially carried out, and the silicon carbide powder is obtained; carrying out thermal field impurity removal treatment; s2, assembling the silicon carbide seed crystal and the impurity-removed thermal field device, raising the temperature in the induction furnace, conveying high-purity argon or mixed gas of high-purity argon and high-purity hydrogen into the induction furnace, and performing crystal growth; s3, after crystal growth is finished, high-temperature and high-pressure annealing treatment is carried out firstly, then furnace cooling treatment is carried out, and the high-purity semi-insulating silicon carbide crystal ingot for the optical element is obtained. The silicon carbide crystal ingot with excellent light transmission performance and high resistivity is obtained by selecting specific raw materials, reasonably designing an assembly mode and combining processes of thermal field impurity removal, high-temperature and high-pressure annealing and the like.

The invention relates to a SiC crystal ingot facet detection method based on Raman combined with resistivity detection, which comprises the following steps: S1, providing a silicon carbide workpiece, acquiring resistivity rho k of different detection areas on the surface layer of the workpiece based on a preset resistivity detection scanning path, and further preliminarily screening out resistivity abnormal areas; s2, on the basis of a preset Raman detection scanning path, obtaining the edge area on the surface layer of the workpiece, the Raman characteristic peak frequency omega ij of different detection points of the resistivity abnormal area obtained in the S1, a detection image, and an XY coordinate position on an XY plane perpendicular to the height direction of the workpiece; and S3, based on a preset n-rho inverse proportion function model of the doping concentration n and the resistivity rho, and a delta omega-n linear model of the Raman frequency shift delta omega and the doping concentration n, determining and associating the XY coordinate positions of the S2 and the corresponding resistivity rho ij, and constructing a resistivity distribution diagram of the surface layer of the workpiece. The method has the advantages of small detection error and short detection time.

The utility model discloses a wafer processing device, and belongs to the technical field of semiconductors. The wafer processing device comprises a carrying table, a shock insulation pad and an ultrasonic device, wherein the carrying table is used for carrying a crystal ingot with a modified layer; the ultrasonic device is arranged above the carrying table, the ultrasonic device can generate transverse vibration waves, and the transverse vibration waves are used for vibrating along the crystal ingot and enabling cracks of the modified layer to extend in the transverse direction; and the bottom of the carrying table is fixedly arranged on the shock insulation pad. According to the utility model, the cracks of the modified layer formed on the crystal ingot by the laser pulse grow and are connected along the transverse direction, the longitudinal growth of the cracks is avoided, the production efficiency of the modified layer is improved, the laser pulse does not need to be intensively emitted, and the wafer processing period is shortened.

The utility model provides a crystal ingot turnover device which comprises a turnover box, a lining is inserted in the turnover box, a plurality of V-shaped grooves used for storing crystal ingots are evenly formed in one face of the lining, and a plurality of round grooves used for storing the crystal ingots are evenly formed in the face, away from the V-shaped grooves, of the lining. First vent grooves are formed in the middle positions of the two parallel side faces of the lining, an insertion groove is formed in the middle position of one side face in each first vent groove, an insertion plate is inserted in each insertion groove, a round hole is formed in the middle position of the upper surface of each insertion plate, a column rod is installed in each round hole, and two vertical grooves are symmetrically formed in the upper surface of the lining. Threaded blind holes are formed in the two ends of the column rod, connecting rods are in threaded connection with the interiors of the threaded blind holes, and a cross rod is fixedly connected to the end, away from the column rod, of each connecting rod. The crystal ingot turnover box has the advantages that the specifications of turnover boxes used for storing crystal ingots of different specifications are uniform, and the management difficulty of the turnover boxes for storing the crystal ingots is lowered.

GaAs IR window slabs having largest dimensions that are greater than 8 inches, and preferably greater than 12 inches, are grown using the Horizontal Gradient Freeze (HGF) method. Heat extraction is simplified by using a shallow horizontal boat that is only slightly deeper than the desired window thickness, thereby enabling growth of large slabs while also minimizing material waste and fabrication cost as compared to slicing and shaping thick plates from large, melt-grown boules. Single crystal seeds can be used to optimize the final orientation of the slabs and minimize secondary nucleation, thereby maximizing yield. A conductive doped GaAs layer can be applied to the IR window slab to provide EMI shielding. The temperature gradient during HGF can be between 1° C. / cm and 3° C. / cm, and the directional solidification can be at a rate of between 0.25 mm / h and 2.5 mm / h.

The embodiment of the invention provides a method and device for automatically controlling a semiconductor crystal ingot to enter a water tank, and relates to the technical field of semiconductor crystal ingot processing auxiliary equipment.The device comprises a rack, a lifting and transplanting device is arranged on the rack, a turnover positioning device is arranged on one side of the lifting and transplanting device, and a first conveying device is arranged on the other side of the lifting and transplanting device; the lifting transplanting device comprises a lifting mechanism, the lifting mechanism is arranged at the tail end of the first conveying device, a transverse moving mechanism is arranged above the lifting mechanism, the overturning positioning device comprises an overturning working frame, a lifting device is arranged on the overturning working frame, an overturning driving part is arranged on the lifting device, and the U-shaped conveying group is arranged on the other side of the overturning positioning device. A turnover workbench is arranged on the turnover driving part, a positioning tool is arranged on the turnover workbench, and the turnover driving part is a servo motor. The device has the effects that operation is stable, and the crystal ingot is prevented from being collided and damaged.

To provide a SiC ingot easily processed during laser processing.SOLUTION: A SiC ingot has a facet surrounded with the minimum area when setting a diameter to D and plan-viewed from a crystal growth direction. When setting the length of the first side of a virtual rectangle having a first side parallel to a <11-20>direction and a second side parallel to a <1-100>direction to Lx, Lx / D<0.3 is satisfied in a first end being an end in the crystal growth direction.SELECTED DRAWING: Figure 3

The invention discloses a high-efficiency low-loss preparation method of a single crystal silicon carbide wafer. The method comprises the following steps: A, grinding the surface of a single crystal silicon carbide ingot; b, the ultrafast pulse laser is modulated into N light spots, the N light spots are focused in the crystal ingot and distributed in the axial direction of the crystal ingot according to preset depth positions, and all the light spots are parallel to the horizontal direction; all the light spots are scanned at the same time, the scanning surface formed by the same light spot covers the cross section of the single crystal silicon carbide crystal ingot in the horizontal direction, and N laser modified layers are formed after scanning; c, carrying out stress-induced separation on the single crystal silicon carbide crystal ingot in the step B; and D, grinding the cutting surface of the single crystal silicon carbide wafer. According to the high-efficiency and low-loss preparation method of the single-crystal silicon carbide wafer, the preparation efficiency of the silicon carbide wafer is improved, meanwhile, the material loss of the single-crystal silicon carbide ingot is reduced, and the yield of the single-crystal silicon carbide ingot is improved.

Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.

The invention provides a silicon carbide crystal ingot laser cutting method and cutting system, belongs to the technical field of silicon carbide crystal ingot processing, and solves the problem of high silicon carbide crystal ingot laser cutting loss in the prior art. The cutting method comprises the following steps that the position of an operation station on a crystal ingot is obtained, and the operation station is a crystal ingot surface area facing a laser source; a scanning path and a target depth are set below the operation station, the first light beam is controlled to scan the target depth along the scanning path, and a focusing light spot of the first light beam is configured as a Gaussian light spot; crack information formed by the first light beam is obtained, the crack information comprises crack widths, and the crack widths are classified into the grade A, the grade B and the grade C in sequence from large to small; and determining a crack width level, and executing a corresponding crack control strategy. The second light beam is additionally arranged to follow the first light beam for synchronous scanning in a phase modulation mode, and the generated pressure stress can offset the original tensile stress so as to restrain crack propagation.

To provide an SiC ingot capable of realizing both of high quality and workability.SOLUTION: This SiC ingot has a step-flow growth region, and a facet. On a cross section passing through a center in a <11-20> direction, an inside boundary between the facet and the step flow growth region has: a first slope inclined in a [-1-120] direction with respect to a crystal growth direction; and a second slope inclined in a [11-20] direction with respect to the crystal growth direction. An inflection point between the first and second slopes is nearer a first end on a Si face side than a center position of ingot length.SELECTED DRAWING: Figure 1

To provide an SiC ingot easy to be laser-processed.SOLUTION: This SiC ingot is made of an SiC single crystal inclined by an offset angle from a (0001) face and crystal-grown from a first end toward a second end, and has a step-flow growth region, and a facet. On a cross section passing through a center in a <11-20> direction, an angle θ1 formed by an inside boundary between the facet and the step flow growth region and a crystal growth direction is 56° or less.SELECTED DRAWING: Figure 1

The invention discloses an oxygen-enriched destressing crystal growth method and a crystal growth furnace, and relates to the technical field of crystal growth, and the oxygen-enriched destressing crystal growth method comprises the following steps: step 1, pre-treating a PMNT polycrystal material, and putting the pretreated PMNT polycrystal material into a crucible; 2, pre-flushing the growth furnace and creating an oxygen partial pressure environment; 3, raising the temperature in the growth furnace to melt and homogenize the PMNT polycrystal material in the crucible; step 4, the crucible moves downwards for directional solidification of the crystal, a solid-liquid interface is formed and stably moves upwards, and in the process, a dynamic regulation and control strategy is adopted in the growth furnace to control an oxygen-enriched environment to promote crystal growth, so that the crystal digests growth stress in the growth process, and formation of oxygen vacancies is inhibited; and step 5, after crystal growth is finished, gradient cooling is performed to room temperature in an oxygen-enriched environment, and a crystal ingot is obtained. Oxygen is used as a regulation and control tool, the stress problem caused by oxygen vacancy is physically solved, the color center and performance problems caused by oxygen vacancy are chemically solved, and the crystal growth quality is improved.

The invention provides a silicon carbide crystal ingot defect detecting and cutting device based on optical coherence tomography, and belongs to the technical field of silicon carbide crystal ingot defect detecting and cutting. In order to solve the technical problems that after a traditional crystal ingot is cut, the detection efficiency is low, imaging is not timely, the imaging resolution is low, and the portability and the linkage performance are poor due to the fact that detection equipment and cutting equipment are separated, the adopted technical scheme is that the output end of an OCT module is connected with the input end of a sample arm module through a wire; the sample arm module is installed below the sample arm support through the sample arm lifting support, and supporting legs on the two sides of the sample arm support are installed on the base. A fixed seat is arranged right below the sample arm module, the fixed seat is mounted on the base through a lifting base, and a crystal ingot is placed on the fixed seat; rolling wheels are further arranged on the two sides of the fixing base and placed on the base, and a cutting line is further connected between the two rolling wheels; the method is applied to defect detection of the silicon carbide crystal ingot.

The invention provides a wafer stripping device and a control method thereof, and belongs to the technical field of semiconductor processing. The wafer stripping device comprises an ultrasonic water tank, wherein a liquid medium for transmitting ultrasonic waves is accommodated in the ultrasonic water tank; the ultrasonic generator is arranged in the liquid medium, and the radiating surface of the ultrasonic generator faces the top of the ultrasonic pool; the movement mechanism is used for installing the crystal ingot, so that the target end of the crystal ingot faces the ultrasonic water tank, the target end of the crystal ingot is close to the modified layer, the end face of the target end is parallel to the radiating surface of the ultrasonic generator, and the movement mechanism is further used for controllably driving the crystal ingot to rotate in the axial direction of the crystal ingot and move in a reciprocating mode in the horizontal direction; wherein the movement mechanism is used for driving the crystal ingot to rotate at a preset rotating speed and move along the horizontal direction at a preset speed, so that the energy of the ultrasonic generator continuously acts on the modified layer of the crystal ingot to strip the wafer. According to the wafer stripping device, the probability of wafer cracking can be remarkably reduced.

The invention belongs to the technical field of semiconductor material processing, and relates to a laser modification and low-temperature impact controllable stripping method and system for a single crystal silicon carbide wafer. The method comprises the following steps: pretreating the surface of a single crystal SiC crystal ingot to form a uniform rough surface; setting femtosecond laser initial parameters, and carrying out modification treatment in the crystal ingot to form a modified area; laser parameters are optimized through sweep-frequency optical coherence tomography and a CNN model, and optimal parameters are obtained; inducing to form a modified layer parallel to the surface in the crystal ingot by utilizing the parameters; coating a polymer on the surface of the modified layer and pre-cooling the crystal ingot; and applying a low-temperature impact load to promote the II-type crack to expand along the crystal face so as to realize controllable stripping. The method solves the problem that cracks are difficult to control in the laser stealth cutting technology.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes for making SiC boules and SiC wafers utilizing such high purity SiOC and SiC.

The invention provides a multi-focus pulse light beam parallel processing method and system based on space beam splitting, and relates to the technical field of semiconductor material laser processing, and the method comprises the steps that a laser generator emits pulse laser to a SiC crystal ingot; the light path adjusting unit performs beam splitting and modulation on the pulse laser to obtain multiple beams of sub-pulse laser; the spatial light modulator performs spherical aberration compensation on the multiple beams of sub-pulse laser, performs phase modulation on the sub-pulse laser by adopting a hologram method to generate various target light fields, and modulates the target light fields in real time by switching holograms to obtain multi-focus pulse laser; the laser processing head unit is used for focusing multi-focus pulse laser in the SiC crystal ingot to set the depth; and the motion base station controls the SiC crystal ingot and the multi-focus pulse laser to perform relative motion and adjusts the relative position between the SiC crystal ingot and the laser processing head unit, scanning processing of the SiC crystal ingot is completed on a preset depth and a preset advancing route, and finally a processed wafer is obtained.

Systems and methods for increasing fracture strength of a semiconductor workpiece (e.g., silicon carbide) are provided. In some examples, a method includes removing a semiconductor wafer from a boule. The method includes implementing a treatment process on the semiconductor wafer removed from the boule. The treatment process includes a thermal treatment process or a chemical etching process. The treatment process provides a fracture strength of the semiconductor wafer in a range of about 17.5 Newtons or greater, such as in a range of about 17.5 Newtons to about 75 Newtons.

The invention discloses a fragmented silicon carbide crystal ingot repairing method which comprises the following steps: splicing a plurality of silicon carbide fragments to form an integral silicon carbide crystal ingot, promoting macroscopic crack opening healing by adopting a liquid phase induction healing process, and then filling microscopic pores around cracks by adopting an in-situ gas phase permeation process to realize crack repairing of the fragmented silicon carbide crystal ingot. According to the provided broken silicon carbide crystal ingot repairing method, a liquid phase induction healing process is adopted, liquid silicon and silicon carbide react to fill gaps, then cooling is performed to form new silicon carbide bonding, macroscopic crack openings are promoted to be closed, and then an in-situ gas phase permeation process is adopted to repair the broken silicon carbide crystal ingot. A chemical covalent network is constructed by depositing and permeating silicon carbide in micro pores by using a silicon source and a carbon source, so that crack repair of the silicon carbide crystal ingot is realized. According to the method, the broken crystal ingot is repaired through physical reconstruction and chemical bonding, and the mechanical and electrical properties of the broken crystal ingot are recovered.

The invention discloses an internal gettering process of a heavily boron-doped czochralski silicon epitaxial wafer, which comprises the following steps: 1) carrying out high-temperature pretreatment on a heavily boron-doped czochralski silicon wafer in an inert atmosphere, including high-temperature rapid heat treatment and high-temperature common heat treatment in sequence; 2) polishing the silicon wafer to eliminate a surface damage layer; and 3) depositing a lightly doped epitaxial layer or an intrinsic epitaxial layer to prepare the epitaxial wafer. After the epitaxial wafer is subjected to device manufacturing thermal process simulation in an oxygen atmosphere, gt can be formed on the near surface of the substrate; an inner gettering area with the BMD density larger than or equal to 5 * 10 < 9 > cm <-3 > is formed in the substrate body; the clean area guarantees the crystal quality of the epitaxial layer and prevents defects from extending to the active area; the inner gettering region enhances the inner gettering capability of the device on metal impurities, and reduces leakage current. The substrate of the epitaxial wafer formed by the method can be taken from any position of the self-weight boron-doped czochralski silicon single crystal ingot, so that the process is unified, the process integration complexity is reduced, and the waste of the crystal ingot is reduced.

The invention belongs to the field of crystal laser stripping, and particularly relates to automatic crystal laser stripping equipment which comprises a base box, a first conveying belt is arranged on the portion, close to one side, of the upper portion of the base box, a second conveying belt is arranged on the portion, close to the other side, of the upper portion of the base box, and a laser transmitter is arranged on one side of the first conveying belt in parallel. The device comprises a laser emitter, the output end of the laser emitter is vertically downward, a containing disc capable of horizontally moving is arranged below the laser emitter, a stripping pool is arranged on one side of the laser emitter in parallel, and a stripping disc capable of lifting and horizontally moving is arranged above the stripping pool. The full-automatic laser stripping function of the crystal ingot is realized, all stripping operations can be completed only by continuously placing and recycling the crystal ingot, and the same crystal ingot can be stripped for multiple times; meanwhile, the underwater vibration technology is adopted in the separation process, the lossless separation effect of the wafer and the crystal ingot is guaranteed, and the finished product quality of the wafer is improved.

The invention provides a crystal ingot cutting method and cutting system, belongs to the technical field of silicon carbide crystal ingot processing, and solves the problem of high crystal ingot cutting loss in the prior art. The cutting method comprises the following steps that the position of an operation station on a crystal ingot is obtained, the operation station is a crystal ingot surface area facing a laser source, a first light beam is controlled to scan a target depth along a scanning path, and the first light beam is focused at the target depth to form a first light spot; information of a crack formed after the first light beam acts on the crystal ingot is obtained, the crack width is determined to be A level, the time interval of phase modulation between the second light beam and the first light beam and the time interval of phase modulation between the third light beam and the first light beam are controlled to be 20 ns to 50 ns, and / or the minimum space interval between the inhibition area and the action area of the first light spot in the direction parallel to the scanning direction of the first light beam is controlled to be 50 microns to 100 microns. The second light beam and the third light beam are additionally arranged to synchronously scan along with the two sides of the first light beam in a phase modulation mode, and crack propagation is restrained.

The invention provides a method for improving the laser lift-off efficiency of a silicon carbide crystal ingot and a lift-off sheet thereof, and relates to the technical field of laser lift-off. Comprising the following steps: polishing a silicon carbide crystal ingot, testing first resistivity information of different positions on the surface of the polished silicon carbide crystal ingot, constructing a standard relational expression of resistivity and laser power according to a statistical relationship, substituting the resistivity information measured in the step S2 into the standard relational expression, and calculating the resistivity of the silicon carbide crystal ingot. Calculating to obtain target power values at different positions on the surface of the silicon carbide crystal ingot; and S2, laser processing conditions of different positions are set according to the target power value, laser modification processing is carried out, the wafer after laser modification processing is stripped, a stripped piece is obtained, and the stripped silicon carbide crystal ingot is returned to the step S1 to be circularly processed. The specific resistivity value is obtained through one-time resistivity testing, the optimal laser machining parameters can be obtained, the number of times of secondary reworking can be effectively reduced, and the stripping and slicing efficiency is greatly improved.

The utility model discloses a crystal ingot conveying device. The crystal ingot conveying device comprises a supporting piece, a synchronous plate, a jacking assembly and a conveying assembly. A cavity is formed in the supporting piece, and a plurality of positioning rings used for containing crystal ingots are evenly arranged on the upper end face of the supporting piece in the front-back direction. And the synchronous plate is slidably arranged in the cavity. The jacking assembly is at least partially arranged on the synchronous plate and can jack up the crystal ingot on the positioning ring. The conveying assembly is at least partially arranged at the bottom of the supporting piece and connected with the synchronous plate. Through the arrangement, when the crystal ingot on any positioning ring on the conveying device is taken away, the jacking assembly can be matched with the conveying assembly, the crystal ingots on all the positioning rings on the front side of the positioning ring are integrally moved backwards, the vacant positioning ring is supplemented, the continuity and timeliness of crystal ingot conveying are improved, and the loss of human resources is reduced.

Disclosed herein is a furnace for producing single crystal boules, the furnace comprising a furnace wall; a plurality of crucibles, where each crucible is operative to contain a melt that is contacted by a different pull rod; where each pull rod is attached to seed crystal; a first drive system that is located above the furnace and is configured to drive a first main shaft that is either in a geared or belted communication with a plurality of first planetary shafts; where each pull rod is in rotary communication at least one planetary shaft; where each pull rod is operative to contact the melt while undergoing rotary and translational motion with respect to a melt in one of the plurality of crucibles; where each crucible is surrounded by an induction coil and a refractory lining; and wherein each induction coil and refractory lining lie within the furnace wall.

The utility model relates to the technical field of semiconductor material processing equipment, in particular to a self-adaptive wafer crystal ingot transfer manipulator which comprises a base and a support which are used for integrally fixing and supporting, the support is of a C-shaped structure and is fixedly arranged on the base, and a plurality of sets of vacuum chucks are evenly installed at the bottom of the base. The vacuum suction cups are connected with external vacuum equipment through pipelines, rotatable guide rods are installed in the positions, close to the four corners, of the interior of the base in a penetrating mode through shaft seats, and rotary supporting handles of a horizontal structure are fixedly arranged at the lower ends of the guide rods. According to the utility model, the loading capacity of the manipulator is improved through the plurality of groups of vacuum chucks, wafers with different diameters can be adsorbed and transferred, the application range is widened, and meanwhile, the arranged guide rods can be moved up and down for adjustment, so that the transfer requirements of crystal ingots with different thicknesses can be met; therefore, the manipulator can cope with wafers or crystal ingots of various sizes without being replaced, and the flexibility and convenience of use are greatly improved.

The invention discloses a fragmentation method for a composite silicon carbide substrate. The fragmentation method comprises the following steps: 1) combining a single crystal silicon carbide crystal ingot with a substrate layer; 2) performing internal modification processing on the single crystal silicon carbide crystal ingot by using laser, forming a modification processing layer in the single crystal silicon carbide crystal ingot, and enabling the incident surface of the laser to deviate from the substrate layer; 3) separating the single crystal silicon carbide crystal ingot along the modified processing layer to obtain a residual single crystal silicon carbide crystal ingot and a composite layer with a substrate layer and a single crystal silicon carbide layer; (4) repeating the steps (1)-(3) on the residual single crystal silicon carbide crystal ingot; wherein the sequence of the step 1) and the step 2) can be exchanged. The problems that in the prior art, saw bite loss is large, surface damage is obvious, and wire saw wire loss is large can be solved through the laser fragmentation technology; the utilization rate of the single crystal silicon carbide is improved by utilizing the substrate layer, structural support is provided for the single crystal silicon carbide layer, and subsequent processing of the single crystal silicon carbide layer is facilitated.