277 results about "Boule" patented technology

The present invention provides a method and apparatus for laser stripping a silicon carbide ingot. The method first transmits an ultrashort pulse laser beam through the first end face of the silicon carbide ingot and focuses it on a set depth layer of the ingot. A cavity-modified region and a crack-modified region are generated above the set depth layer, respectively, and scanned to form the cavity-modified layer and the crack-modified layer. A short pulse laser beam then transmits the second end face of the silicon carbide ingot and focuses it on the cavity-modified region. The beam scatters and propagates within the cavity-modified region, causing the heat from the short pulse laser beam to act on the cavity-modified region, causing cracks within the crack-modified region to grow laterally outward. Scanning is then performed to connect cracks within adjacent cavity-modified regions within the cavity-modified layer through lateral growth. This reduces the amount and length of cracks in the modified layer extending longitudinally along the silicon carbide ingot, increases the number and length of lateral crack growth, reduces cutting loss, and reduces waste.

The utility model discloses a wafer processing device, and belongs to the technical field of semiconductors. The wafer processing device comprises a carrying table, a shock insulation pad and an ultrasonic device, wherein the carrying table is used for carrying a crystal ingot with a modified layer; the ultrasonic device is arranged above the carrying table, the ultrasonic device can generate transverse vibration waves, and the transverse vibration waves are used for vibrating along the crystal ingot and enabling cracks of the modified layer to extend in the transverse direction; and the bottom of the carrying table is fixedly arranged on the shock insulation pad. According to the utility model, the cracks of the modified layer formed on the crystal ingot by the laser pulse grow and are connected along the transverse direction, the longitudinal growth of the cracks is avoided, the production efficiency of the modified layer is improved, the laser pulse does not need to be intensively emitted, and the wafer processing period is shortened.

The embodiment of the invention provides a method and device for automatically controlling a semiconductor crystal ingot to enter a water tank, and relates to the technical field of semiconductor crystal ingot processing auxiliary equipment.The device comprises a rack, a lifting and transplanting device is arranged on the rack, a turnover positioning device is arranged on one side of the lifting and transplanting device, and a first conveying device is arranged on the other side of the lifting and transplanting device; the lifting transplanting device comprises a lifting mechanism, the lifting mechanism is arranged at the tail end of the first conveying device, a transverse moving mechanism is arranged above the lifting mechanism, the overturning positioning device comprises an overturning working frame, a lifting device is arranged on the overturning working frame, an overturning driving part is arranged on the lifting device, and the U-shaped conveying group is arranged on the other side of the overturning positioning device. A turnover workbench is arranged on the turnover driving part, a positioning tool is arranged on the turnover workbench, and the turnover driving part is a servo motor. The device has the effects that operation is stable, and the crystal ingot is prevented from being collided and damaged.

The invention discloses a high-efficiency low-loss preparation method of a single crystal silicon carbide wafer. The method comprises the following steps: A, grinding the surface of a single crystal silicon carbide ingot; b, the ultrafast pulse laser is modulated into N light spots, the N light spots are focused in the crystal ingot and distributed in the axial direction of the crystal ingot according to preset depth positions, and all the light spots are parallel to the horizontal direction; all the light spots are scanned at the same time, the scanning surface formed by the same light spot covers the cross section of the single crystal silicon carbide crystal ingot in the horizontal direction, and N laser modified layers are formed after scanning; c, carrying out stress-induced separation on the single crystal silicon carbide crystal ingot in the step B; and D, grinding the cutting surface of the single crystal silicon carbide wafer. According to the high-efficiency and low-loss preparation method of the single-crystal silicon carbide wafer, the preparation efficiency of the silicon carbide wafer is improved, meanwhile, the material loss of the single-crystal silicon carbide ingot is reduced, and the yield of the single-crystal silicon carbide ingot is improved.

The invention discloses an oxygen-enriched destressing crystal growth method and a crystal growth furnace, and relates to the technical field of crystal growth, and the oxygen-enriched destressing crystal growth method comprises the following steps: step 1, pre-treating a PMNT polycrystal material, and putting the pretreated PMNT polycrystal material into a crucible; 2, pre-flushing the growth furnace and creating an oxygen partial pressure environment; 3, raising the temperature in the growth furnace to melt and homogenize the PMNT polycrystal material in the crucible; step 4, the crucible moves downwards for directional solidification of the crystal, a solid-liquid interface is formed and stably moves upwards, and in the process, a dynamic regulation and control strategy is adopted in the growth furnace to control an oxygen-enriched environment to promote crystal growth, so that the crystal digests growth stress in the growth process, and formation of oxygen vacancies is inhibited; and step 5, after crystal growth is finished, gradient cooling is performed to room temperature in an oxygen-enriched environment, and a crystal ingot is obtained. Oxygen is used as a regulation and control tool, the stress problem caused by oxygen vacancy is physically solved, the color center and performance problems caused by oxygen vacancy are chemically solved, and the crystal growth quality is improved.

The invention provides a silicon carbide crystal ingot defect detecting and cutting device based on optical coherence tomography, and belongs to the technical field of silicon carbide crystal ingot defect detecting and cutting. In order to solve the technical problems that after a traditional crystal ingot is cut, the detection efficiency is low, imaging is not timely, the imaging resolution is low, and the portability and the linkage performance are poor due to the fact that detection equipment and cutting equipment are separated, the adopted technical scheme is that the output end of an OCT module is connected with the input end of a sample arm module through a wire; the sample arm module is installed below the sample arm support through the sample arm lifting support, and supporting legs on the two sides of the sample arm support are installed on the base. A fixed seat is arranged right below the sample arm module, the fixed seat is mounted on the base through a lifting base, and a crystal ingot is placed on the fixed seat; rolling wheels are further arranged on the two sides of the fixing base and placed on the base, and a cutting line is further connected between the two rolling wheels; the method is applied to defect detection of the silicon carbide crystal ingot.

The invention provides a wafer stripping device and a control method thereof, and belongs to the technical field of semiconductor processing. The wafer stripping device comprises an ultrasonic water tank, wherein a liquid medium for transmitting ultrasonic waves is accommodated in the ultrasonic water tank; the ultrasonic generator is arranged in the liquid medium, and the radiating surface of the ultrasonic generator faces the top of the ultrasonic pool; the movement mechanism is used for installing the crystal ingot, so that the target end of the crystal ingot faces the ultrasonic water tank, the target end of the crystal ingot is close to the modified layer, the end face of the target end is parallel to the radiating surface of the ultrasonic generator, and the movement mechanism is further used for controllably driving the crystal ingot to rotate in the axial direction of the crystal ingot and move in a reciprocating mode in the horizontal direction; wherein the movement mechanism is used for driving the crystal ingot to rotate at a preset rotating speed and move along the horizontal direction at a preset speed, so that the energy of the ultrasonic generator continuously acts on the modified layer of the crystal ingot to strip the wafer. According to the wafer stripping device, the probability of wafer cracking can be remarkably reduced.

The invention belongs to the technical field of semiconductor material processing, and relates to a laser modification and low-temperature impact controllable stripping method and system for a single crystal silicon carbide wafer. The method comprises the following steps: pretreating the surface of a single crystal SiC crystal ingot to form a uniform rough surface; setting femtosecond laser initial parameters, and carrying out modification treatment in the crystal ingot to form a modified area; laser parameters are optimized through sweep-frequency optical coherence tomography and a CNN model, and optimal parameters are obtained; inducing to form a modified layer parallel to the surface in the crystal ingot by utilizing the parameters; coating a polymer on the surface of the modified layer and pre-cooling the crystal ingot; and applying a low-temperature impact load to promote the II-type crack to expand along the crystal face so as to realize controllable stripping. The method solves the problem that cracks are difficult to control in the laser stealth cutting technology.

Systems and methods for increasing fracture strength of a semiconductor workpiece (e.g., silicon carbide) are provided. In some examples, a method includes removing a semiconductor wafer from a boule. The method includes implementing a treatment process on the semiconductor wafer removed from the boule. The treatment process includes a thermal treatment process or a chemical etching process. The treatment process provides a fracture strength of the semiconductor wafer in a range of about 17.5 Newtons or greater, such as in a range of about 17.5 Newtons to about 75 Newtons.

The invention discloses an internal gettering process of a heavily boron-doped czochralski silicon epitaxial wafer, which comprises the following steps: 1) carrying out high-temperature pretreatment on a heavily boron-doped czochralski silicon wafer in an inert atmosphere, including high-temperature rapid heat treatment and high-temperature common heat treatment in sequence; 2) polishing the silicon wafer to eliminate a surface damage layer; and 3) depositing a lightly doped epitaxial layer or an intrinsic epitaxial layer to prepare the epitaxial wafer. After the epitaxial wafer is subjected to device manufacturing thermal process simulation in an oxygen atmosphere, gt can be formed on the near surface of the substrate; an inner gettering area with the BMD density larger than or equal to 5 * 10 < 9 > cm <-3 > is formed in the substrate body; the clean area guarantees the crystal quality of the epitaxial layer and prevents defects from extending to the active area; the inner gettering region enhances the inner gettering capability of the device on metal impurities, and reduces leakage current. The substrate of the epitaxial wafer formed by the method can be taken from any position of the self-weight boron-doped czochralski silicon single crystal ingot, so that the process is unified, the process integration complexity is reduced, and the waste of the crystal ingot is reduced.

The invention provides a crystal ingot cutting method and cutting system, belongs to the technical field of silicon carbide crystal ingot processing, and solves the problem of high crystal ingot cutting loss in the prior art. The cutting method comprises the following steps that the position of an operation station on a crystal ingot is obtained, the operation station is a crystal ingot surface area facing a laser source, a first light beam is controlled to scan a target depth along a scanning path, and the first light beam is focused at the target depth to form a first light spot; information of a crack formed after the first light beam acts on the crystal ingot is obtained, the crack width is determined to be A level, the time interval of phase modulation between the second light beam and the first light beam and the time interval of phase modulation between the third light beam and the first light beam are controlled to be 20 ns to 50 ns, and / or the minimum space interval between the inhibition area and the action area of the first light spot in the direction parallel to the scanning direction of the first light beam is controlled to be 50 microns to 100 microns. The second light beam and the third light beam are additionally arranged to synchronously scan along with the two sides of the first light beam in a phase modulation mode, and crack propagation is restrained.

The invention provides a method for improving the laser lift-off efficiency of a silicon carbide crystal ingot and a lift-off sheet thereof, and relates to the technical field of laser lift-off. Comprising the following steps: polishing a silicon carbide crystal ingot, testing first resistivity information of different positions on the surface of the polished silicon carbide crystal ingot, constructing a standard relational expression of resistivity and laser power according to a statistical relationship, substituting the resistivity information measured in the step S2 into the standard relational expression, and calculating the resistivity of the silicon carbide crystal ingot. Calculating to obtain target power values at different positions on the surface of the silicon carbide crystal ingot; and S2, laser processing conditions of different positions are set according to the target power value, laser modification processing is carried out, the wafer after laser modification processing is stripped, a stripped piece is obtained, and the stripped silicon carbide crystal ingot is returned to the step S1 to be circularly processed. The specific resistivity value is obtained through one-time resistivity testing, the optimal laser machining parameters can be obtained, the number of times of secondary reworking can be effectively reduced, and the stripping and slicing efficiency is greatly improved.

The utility model discloses a crystal ingot conveying device. The crystal ingot conveying device comprises a supporting piece, a synchronous plate, a jacking assembly and a conveying assembly. A cavity is formed in the supporting piece, and a plurality of positioning rings used for containing crystal ingots are evenly arranged on the upper end face of the supporting piece in the front-back direction. And the synchronous plate is slidably arranged in the cavity. The jacking assembly is at least partially arranged on the synchronous plate and can jack up the crystal ingot on the positioning ring. The conveying assembly is at least partially arranged at the bottom of the supporting piece and connected with the synchronous plate. Through the arrangement, when the crystal ingot on any positioning ring on the conveying device is taken away, the jacking assembly can be matched with the conveying assembly, the crystal ingots on all the positioning rings on the front side of the positioning ring are integrally moved backwards, the vacant positioning ring is supplemented, the continuity and timeliness of crystal ingot conveying are improved, and the loss of human resources is reduced.

Disclosed herein is a furnace for producing single crystal boules, the furnace comprising a furnace wall; a plurality of crucibles, where each crucible is operative to contain a melt that is contacted by a different pull rod; where each pull rod is attached to seed crystal; a first drive system that is located above the furnace and is configured to drive a first main shaft that is either in a geared or belted communication with a plurality of first planetary shafts; where each pull rod is in rotary communication at least one planetary shaft; where each pull rod is operative to contact the melt while undergoing rotary and translational motion with respect to a melt in one of the plurality of crucibles; where each crucible is surrounded by an induction coil and a refractory lining; and wherein each induction coil and refractory lining lie within the furnace wall.

The utility model relates to the technical field of semiconductor material processing equipment, in particular to a self-adaptive wafer crystal ingot transfer manipulator which comprises a base and a support which are used for integrally fixing and supporting, the support is of a C-shaped structure and is fixedly arranged on the base, and a plurality of sets of vacuum chucks are evenly installed at the bottom of the base. The vacuum suction cups are connected with external vacuum equipment through pipelines, rotatable guide rods are installed in the positions, close to the four corners, of the interior of the base in a penetrating mode through shaft seats, and rotary supporting handles of a horizontal structure are fixedly arranged at the lower ends of the guide rods. According to the utility model, the loading capacity of the manipulator is improved through the plurality of groups of vacuum chucks, wafers with different diameters can be adsorbed and transferred, the application range is widened, and meanwhile, the arranged guide rods can be moved up and down for adjustment, so that the transfer requirements of crystal ingots with different thicknesses can be met; therefore, the manipulator can cope with wafers or crystal ingots of various sizes without being replaced, and the flexibility and convenience of use are greatly improved.

The invention discloses a fragmentation method for a composite silicon carbide substrate. The fragmentation method comprises the following steps: 1) combining a single crystal silicon carbide crystal ingot with a substrate layer; 2) performing internal modification processing on the single crystal silicon carbide crystal ingot by using laser, forming a modification processing layer in the single crystal silicon carbide crystal ingot, and enabling the incident surface of the laser to deviate from the substrate layer; 3) separating the single crystal silicon carbide crystal ingot along the modified processing layer to obtain a residual single crystal silicon carbide crystal ingot and a composite layer with a substrate layer and a single crystal silicon carbide layer; (4) repeating the steps (1)-(3) on the residual single crystal silicon carbide crystal ingot; wherein the sequence of the step 1) and the step 2) can be exchanged. The problems that in the prior art, saw bite loss is large, surface damage is obvious, and wire saw wire loss is large can be solved through the laser fragmentation technology; the utilization rate of the single crystal silicon carbide is improved by utilizing the substrate layer, structural support is provided for the single crystal silicon carbide layer, and subsequent processing of the single crystal silicon carbide layer is facilitated.

The application relates to a laser-induced silicon carbide wafer crack propagation plasma control method, which comprises the following steps: laser focusing is carried out at a to-be-processed position of a silicon carbide crystal ingot, and a high excitation state plasma is generated in the crystal ingot; after the plasma is generated, an external magnetic field or an electric field is applied to control the movement state of the plasma, so that the crack propagates along a predetermined path and depth; characteristic parameters of the plasma are monitored in real time, data is transmitted to a feedback control system, laser parameters, magnetic field or electric field intensity are dynamically adjusted according to the movement state of the plasma; the crack growth range is expanded through multiple scanning, and wafer peeling is realized. The laser-induced silicon carbide wafer crack propagation plasma control method can effectively control the crack propagation path and depth, avoid the disordered propagation of the crack, greatly reduce the material damage in the silicon carbide wafer processing process, efficiently peel the silicon carbide wafer, improve the processing speed, and improve the quality of the final product.

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration / activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

The utility model discloses a fixing clamp for silicon carbide crystal ingot plane grinding machining, and relates to the technical field of silicon carbide crystal machining. Comprising a supporting mechanism, a rotary adjusting mechanism and a plurality of clamping mechanisms. The supporting mechanism is used for supporting and positioning the silicon carbide crystal ingot, the rotary adjusting mechanism and the clamping mechanism; the rotary adjusting mechanism comprises a rotary table, an adjusting rod and a locking arm; the clamping mechanism comprises a self-adaptive adjusting clamping jaw, the clamping jaw is connected with a first linear bearing, the bottom of the first linear bearing is connected with a rubber-coated bearing, and the rubber-coated bearing is used for converting the rotating motion of the turntable into the linear motion of the clamping mechanism on the first guide shaft; according to the utility model, the relative distance of the clamping jaws is adjusted to adapt to different crystal ingot diameters, and meanwhile, the clamping jaws have the compression force of the springs, so that the crystal ingot can be clamped more firmly, the processing safety is improved, and the product damage rate is reduced.

The invention provides a crystal ingot polishing grinding wheel which comprises a basic unit which comprises a wheel-shaped body and a polishing layer, and a shaft hole is formed in the axis of the wheel-shaped body. The wheel-shaped body is provided with an extension part which is formed by extending outwards in the radial direction, the extension part is provided with two annular extension convex parts and an annular extension concave part, and the annular extension concave part is formed by being concaved inwards towards the shaft hole relative to the two annular extension convex parts; the polishing layer is provided with two first working parts and a second working part; the two first working parts are arranged on the surfaces of the two annular extending convex parts, and the second working parts are arranged on the surfaces of the annular extending concave parts. The crystal ingot polishing grinding wheel has the effects of being easy to operate and high in convenience, and can solve the problems of subsurface damage, high surface roughness and the like after wafer edge grinding.

A device for storing and transporting crystal ingots, comprising a containing box and a crystal ingot material box arranged in the containing box; the crystal ingot material box comprises a box body, the top surface of the box body is provided with two arc-shaped grooves with parallel axes, the two ends of the arc-shaped groove are provided with arc-shaped blocking parts arranged concentrically with the arc-shaped groove, the interior of the arc-shaped groove is provided with an arc-shaped support part with a diameter smaller than the arc-shaped groove and arranged concentrically; the arc-shaped support part divides the arc-shaped groove into a plurality of placement slots; the bottom surface of the box body is provided with a containing hole facing the arc-shaped groove. A method for storing crystal ingots is also provided. The present invention adopts a crystal ingot material box with double-sided lining, which can store crystal ingots of different lengths as needed to avoid edge collapse and collision between goods during transportation.

The invention provides a composite substrate and a preparation method thereof, relates to the technical field of semiconductor chips, and solves the problem that a laser lift-off method is relatively low in utilization rate of a blank crystal ingot. The preparation method of the composite substrate comprises the steps of first bonding, first modification, first lift-off, second bonding and second lift-off; first bonding: bonding the first substrate and the second substrate; first modification: forming a plurality of modified layers on the first substrate, and forming the plurality of modified layers at different laser scanning intervals; first stripping: separating at the first target modified layer by using ultrasound to obtain a target substrate; the first target modified layer is the modified layer with the minimum laser scanning interval in the multiple modified layers; second bonding: bonding the target substrate with the third substrate to obtain an initial composite substrate; second stripping: separating at a second target modified layer of the initial composite substrate by using ultrasound; the modified layer with the minimum laser scanning interval is a second target modified layer. In the stripping step, the composite substrate is obtained.

The utility model provides a crystal ingot cleaning device, which belongs to the technical field of semiconductor processing equipment, and particularly comprises a cleaning tank body and a lifting clamping mechanism, the lifting clamping mechanism is arranged on the cleaning tank body, the lifting clamping mechanism is used for clamping a to-be-cleaned crystal ingot and moving the to-be-cleaned crystal ingot into the cleaning tank body, and an ultrasonic cleaning mechanism in the cleaning tank body conducts ultrasonic cleaning on the crystal ingot. According to the crystal ingot cleaning device provided by the embodiment of the invention, the lifting clamping mechanism is used for clamping and fixing the to-be-cleaned crystal ingot and moving the to-be-cleaned crystal ingot into the cleaning tank body, and the ultrasonic cleaning mechanism in the cleaning tank body performs ultrasonic cleaning on the to-be-cleaned crystal ingot. The lifting clamping mechanism is designed to clamp and move the crystal ingot, the clamping effect on the crystal ingot is kept in the cleaning process, it can be guaranteed that the position of the crystal ingot is kept unchanged in the cleaning process, the crystal ingot is not affected by ultrasound and buoyancy, and accurate material taking of a mechanical arm after cleaning is facilitated.

The present application relates to a controllable crack silicon carbide laser stripping method, which comprises the following steps: first focusing a pulsed laser on a preset stripping surface inside a silicon carbide ingot, and repeatedly performing at least two laser scans along a preset laser scanning path, at least one laser parameter of the at least two laser scans is regulated so that the modified point spacing decreases with the number of scans, to sequentially form a plurality of discrete modified points and a plurality of continuous modified points on the preset stripping surface, an overlapping area is formed between at least two adjacent continuous modified points on the same laser scanning line, and then a crack extending along the cleavage surface of the silicon carbide ingot and passing through the discrete modified points and adjacent laser scanning lines is formed in the overlapping area, and then the silicon carbide ingot is stripped along the preset stripping surface to obtain a wafer and a remaining ingot. The present application has the advantages of uniform and consistent modification depth, improved wafer surface quality, stable and controllable process, and adaptation to large-scale production.

The invention relates to a high-intensity focused ultrasound-assisted laser lift-off method, and belongs to the technical field of silicon carbide wafer lift-off. The method comprises the following steps: a, forming a modified layer: providing a silicon carbide crystal ingot, positioning a laser focus point F of a pulse laser ray L at a preset depth in the silicon carbide crystal ingot by adopting the pulse laser ray L with the wavelength permeable to the silicon carbide crystal ingot, and forming the modified layer in the silicon carbide crystal ingot by relatively moving the silicon carbide crystal ingot and the laser focus point F; and b, a wafer stripping step: providing a high-intensity focused ultrasound generating device. According to the invention, the fundamental innovation of the stripping mechanism is realized, the stripping efficiency is high, the action position is accurate, and the damage is more controllable; energy is highly concentrated and precisely acted, energy dispersion is avoided, and the stripping precision is improved; process integration is achieved through synchronous machining, the problems of secondary clamping, interface re-healing and the like are avoided, and efficiency and consistency are improved; the thermal damage and the mechanical damage are obviously reduced; by adjusting the focus position, the system can adapt to complex structures and deep modification.

The invention discloses a processing method of a silicon carbide wafer and the silicon carbide wafer. The processing method comprises the following steps: carrying out surface pretreatment on a silicon carbide crystal ingot to remove a graphite layer on a first surface of the silicon carbide crystal ingot; the second surface is ground, so that the flatness of the second surface is smaller than or equal to 0.01 mm; and the first surface is ground, so that the flatness of the first surface is smaller than or equal to 0.01 mm. The steps are sequentially carried out, so that the silicon carbide loss is reduced, the processing quality and the surface precision are improved, and the silicon carbide wafer with the surface roughness of 0.01-0.2 mu m can be obtained without the assistance of a subsequent grinding and polishing process. The machining method can adapt to the geometrical characteristics of the irregular silicon carbide crystal ingot, and the material utilization rate and the machining safety are both considered.

The utility model relates to a non-contact crystal ingot resistivity measuring device, which comprises an equipment support, a linear module and a jacking rotating mechanism, wherein the linear module and the jacking rotating mechanism are arranged on the equipment support; the workpiece carrying table is arranged at the moving end of the linear module, the workpiece tray is arranged at the output end of the jacking rotating mechanism, and the resistivity probe is installed on the equipment support in the mode that the direction of the detection end is the same as the jacking direction of the jacking rotating mechanism. The moving path of the workpiece carrying table sequentially passes through the workpiece tray and the resistivity probe, and the workpiece carrying table is provided with a strip-shaped measuring opening for the workpiece tray and the resistivity probe to penetrate through. According to the utility model, the workpiece tray and the resistivity probe are arranged on the same side, and the movable workpiece carrying table is assisted to drive the workpiece to feed, so that the non-contact measurement of the resistivity of the workpiece and the workpiece transposition are realized, the resistivity value corresponding to each coordinate position of the workpiece can be output, the measurement is accurate, the operation is simple, and the full-coverage scanning measurement can be realized.

The utility model discloses a stripping device. The stripping device is used for stripping a wafer from a crystal ingot, and comprises a bearing unit used for bearing the crystal ingot; the stripping unit and the bearing unit are arranged at an interval, and the stripping unit is used for providing vibration for the crystal ingot and stripping the wafer from the crystal ingot; the sliding unit is connected with the bearing unit and can enable the bearing unit to move towards the stripping unit in the extending direction of the sliding unit, so that the stripping unit is in contact with the crystal ingot; the force measuring unit is arranged on the side, away from the stripping unit, of the bearing unit and is in communication connection with the stripping unit, the force measuring unit is used for detecting the pressure value borne by the bearing unit, and when it is detected that the pressure value borne by the bearing unit is larger than or equal to a preset pressure standard value, the stripping unit is driven to stop stripping the crystal ingot. Through the mode, the stripping device provided by the utility model can realize complete separation of the wafer from the crystal ingot by using the stripping unit.

The utility model discloses a wafer processing system, and belongs to the technical field of semiconductors. The wafer processing system comprises processing equipment, transportation equipment and transfer equipment, the transfer equipment comprises a plurality of switching units, the switching units are arranged on the same sides of a laser irradiation unit, a wafer stripping unit and a grinding unit, and each switching unit comprises a first moving module, a second moving module, two third moving modules and two adsorption components. The first moving module extends in the first direction, the second moving module is arranged on the first moving module and can move in the first direction, the two third moving modules are arranged on the two sides of the second moving module respectively and can move in the second direction, and the adsorption components are arranged on the third moving modules and can move in the third direction. According to the utility model, the cutting, stripping and grinding of the crystal ingot can be automatically completed, the production efficiency is improved, and the batch production of wafers is facilitated.

Aspects provide forming hLDD SiC substrate wafers having a number of defects per square centimeter in excess of a predetermined threshold, and using the hLDD SiC substrate wafers to make vertical diffused metal oxide semiconductor (DMOS) field effect transistors (FET). In particular, methods comprise: growing by deposition a SiC ingot; slicing the SiC ingot to produce a plurality of base drift wafers; identifying base drift wafers having a number of defects per square centimeter in excess of a predetermined threshold; and forming a respective device layer on the identified base drift wafers. An aspect provides a DMOS FET having a base drift layer on the device layer and comprising SiC and having a number of defects per square centimeter in excess of a predetermined threshold.