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94results about How to "Increase growth rate" patented technology

Pond artificial domesticating method for Acrossocheilus yunnanensis

InactiveCN103461247AImprove survival rateIncrease growth rateClimate change adaptationPisciculture and aquariaProtein qualityAcrossocheilus yunnanensis
The invention relates to a pond artificial domesticating method for Acrossocheilus yunnanensis and belongs to the technical field of fish culturing. The method comprises the following steps of selecting and preparing a domesticating pond, i.e. selecting a rectangular cement pond as the domesticating pond, planting hornworts in the pond, wherein the area of the hornworts accounts for one third that of the whole pond, and simulating the natural environment; filling wild fish fingerling into the pond, feeding and domesticating the wild fish fingerling, and performing daily management on the wild fish fingerling, i.e. filling a complete formula feed with a particle size of 1.5mm and a protein percentage of 35 percent, wherein the daily feed filling amount accounts for 2 to 3 percent of the weight of the fishes, enabling water in the domesticating pond to slowly flow, exchanging the water body every 3 to 4 days, and filling 2 to 3g of allicin or Vc (vitamin c) for fish every one kilometer of feed every 20 days for 2 to 3 days continuously; preventing and controlling fish diseases, i.e. spraying povidone iodine and ethylene double ammonium dithiocarbamate into the pond to control every 15 days to prevent and control bacteriosis and balantidiasis, wherein the prevention dosage is 50 to 60ml per 0.0667 hectares, and the controlling dosage is 80 to 100ml per 0.0667 hectares. The survival rate and the growing speed of the wild Acrossocheilus yunnanensis can be effectively improved by the method, and the method is simple, and is convenient to use and popularize.
Owner:云南省水产技术推广站

Preparation method of diamond heat sink piece

The invention discloses a preparation method of a diamond heat sink piece, and relates to a preparation method of diamond. The method is used for the field of heat sink. The method solves the problems that according to an existing MWCVD method, the growth rate of diamond production is slow, the surface is rough, and the heat conductivity is low. The preparation method comprises the steps that firstly, a silicon wafer is cut, and after the silicon wafer is ultrasonically cleaned, a clean silicon wafer substrate is obtained; secondly, the surface of the clean silicon wafer substrate is evenly coated with nano diamond suspension liquid; thirdly, the silicon wafer coated with the diamond suspension liquid is placed in an MWCVD device, and after hydrogen and methane are led in the device, chemical vapor deposition is carried out; and fourthly, a mixed solution of HNO3 and HF is utilized for carrying out corrosion to remove the silicon substrate, and after cleaning, the diamond heat sink piece is obtained. The method that the surface is coated with the nano diamond suspension liquid is used for obviously improving the growth rate of a diamond film, the growth rate reaches 2 micrometers per hour to 5 micrometers per hour, the roughness of a growth surface can be reduced to 600nm, the heat conductivity is high, and the method conforms to the standard of artificial diamond heat sink.
Owner:HARBIN INST OF TECH

Self-circulation anaerobic reactor

The present invention relates to a self-circulation anaerobic reactor, and belongs to the technical field of brewing industry sewage treatment. The self-circulation anaerobic reactor mainly includes a tank, wherein the internal of the tank is provided with a gas collector through a center support column, the tank is divided into an upper reaction chamber and a lower reaction chamber through the gas collector, the top of the tank is provided with an arched gas collection shield through an overflow weir, the bottom of the tank is provided with a material feed distributor, a water inlet pipe, a sludge discharge pipe and a side enter type stirrer, four groups of self-circulation systems are arranged inside the tank, each group of the self-circulation system comprises a back flow pipe, a biogas pipe and a gas stripping pipe, the upper end of the back flow pipe is connected with a gas-liquid separator arranged on the upper reaction chamber, the lower end of the back flow pipe is connected with a swirling water distribution device arranged on the lower reaction chamber, one part of the biogas pipe is directly communicated with the gas-liquid separator and the upper reaction chamber, the other part of the biogas pipe is communicated with the gas-liquid separator and the upper reaction chamber through a biogas collection pipe, and the gas-liquid separator is connected with the gas collector through the gas stripping pipe. The self-circulation anaerobic reactor is mainly used for high slag and high solid content sewage treatment in brewing industry.
Owner:山东振龙生物化工集团有限公司

Method for improving ratio of female fish in cynoglossus semilaevis cultured fingerlings

The invention relates to a method for improving the ratio of female fish in cynoglossus semilaevis cultured fingerlings. The method comprises the following steps of: 1) screening male parent fish; 2) performing artificial propagation and family establishment; 3) cultivating fish fries with different families and detecting the ratio of male and female fish; and 4) cultivating a high-female and fast-growing family and propagating, wherein a genetic marker used in the step 1) is SChen-SSR2. According to the invention, a method for identifying cynoglossus semilaevis genetic female fish and genetic male fish is established by the SChen-SSR2 marker, and then a method for improving the ratio of female fish in cynoglossus semilaevis cultured fingerlings is established by breeding generations fromthe high-quality normal male fish or establishing a cynoglossus family with a high female ratio bred by the families. The method provided by the invention can be used for solving the most common problems of too high ratio of male fish and too low ratio of physiological female fish in the cultured populations, and thus the method is of great importance in the scale production and cultivation of high-quality cynoglossus semilaevis fingerlings, the improvement of cultivation yield and economic benefit, and the promotion of continuous and rapid development of the cynoglossus semilaevis cultivation industry.
Owner:YELLOW SEA FISHERIES RES INST CHINESE ACAD OF FISHERIES SCI

Device for epitaxial growth of silicon carbide

The invention provides a device for epitaxial growth of silicon carbide. The cylindrical device is sequentially provided with a heating coil, a quartz wall, a graphite soft felt, a graphite support layer and a reaction cavity surrounded by the graphite support layer from outside to inside, wherein a gas inlet device and a gas outlet device are respectively arranged at two ends of the reaction cavity, a clad layer is plated on the inner wall of the graphite support layer, L-shaped gas supplementing tubes which are arranged side by side are parallel to the cylindrical device in axial direction, pass through the graphite soft felt and vertically pass through the graphite support layer, and clad layers are plated on the inner walls of the gas supplementing tubes. The gas provided by the gas supplementing tubes of the device compensates the lower part of the gas flow, so that the concentrations of the upper part and the lower part of the gas flow are generally the same, and the uniformity of the thickness of an epitaxial layer of silicon carbide is improved; gas phase nucleation in gas is inhibited, the growth rate is improved, and ultra thick silicon carbide epitaxial wafers with uniform height can be rapidly prepared. The device has a simple structure, is simple to manufacture and implement, has low manufacture cost, is easy to install and operate, and is applicable to industrial production; the epitaxial growth rate is high, and the quality of silicon carbide is good.
Owner:GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2

Preparation method and application of tea fermentation bacterium yeast

The invention discloses a preparation method of tea fermentation bacterium yeast. The preparation method comprises the following steps: weighing tea, adjusting the moisture content, after sterilizing, cooling to the room temperature, inoculating the tea with eurotium, and placing in an incubator for first post-fermentation culture, so as to obtain triangular flask bacterium yeast; weighing tea, adjusting the water activity to be 0.86-0.95, after sterilizing, cooling to the room temperature, and uniformly mixing the primarily treated tea with the triangular flask bacterium yeast for secondary post-fermentation culture according to the ratio of the primarily treated tea to the triangular flask bacterium yeast in parts by weight being 100: (0.5-3); fermenting for 5-7 days to obtain the tea fermentation bacterium yeast. The invention also provides a method for carrying out post-fermentation on tea by using the tea fermentation bacterium yeast. The tea fermentation bacterium yeast disclosed by the invention belongs to a solid leavening agent, and compared with the eurotium spore suspension, the tea fermentation bacterium yeast has the following advantages: the change of tea water activity and the temperature and humidity of the environment is avoided, the product is enabled to be closer to the original quality of tea, and the quantity of eurotium is increased.
Owner:GUANGXI UNIV

Growth regulator capable of regulating growth and other functions of microalgae, and verification method and application thereof

InactiveCN104946535AImprove physiological traitsIncrease growth rateUnicellular algaeMicrobiological testing/measurementSignaling proteinsHormone metabolism
The invention relates to the technical field of biological metabolism engineering, particularly a metabolism and signal pathway of a microalga growth regulator, and a verification method and application thereof. A metabolomic means is utilized to verify microalga hormones, and a functional genomic means is utilized to explain the metabolism channel, signal transmission pathway and regulation network of the microalga hormones; a transcriptomic means is utilized to verify key enzymes and proteins related to hormone metabolism and signal transmission in the microalga stress tolerance and oil synthesis process; and metabolism engineering and chemical engineering means are utilized to regulate the hormone metabolism and signal pathway, thereby optimizing the physiological characters of the algae and plants. The invention provides a method for verifying microalga hormones and metabolism pathway/signal pathway thereof. The method can explain the hormone metabolism enzymes and signal proteins closely related to physiology of algae as well as related regulation mechanism, and is used for improving the agronomic characters of organisms.
Owner:QINGDAO INST OF BIOENERGY & BIOPROCESS TECH CHINESE ACADEMY OF SCI

Crystal growth assembly for preparing single crystals through PVT method and method for preparing single crystal

ActiveCN112481700AIncrease growth rateStable growth environmentPolycrystalline material growthFrom condensed vaporsSingle crystalCrucible
The invention provides a crystal growth assembly for preparing single crystals through a PVT method. The crystal growth assembly comprises a crucible and a heating device located above the crucible. The heating device is provided with a plurality of concentrically arranged annular heating temperature zones, so that the axial temperature gradient in the crucible is adjusted by controlling the overall heating temperature of the plurality of concentrically arranged annular heating temperature zones in the heating and/or crystal growth stage of single crystal preparation; and the radial temperature gradient in the crucible is adjusted by controlling the heating temperature of each annular heating temperature zone in the plurality of concentrically arranged annular heating temperature zones. According to the device for preparing the silicon carbide single crystal, the axial temperature gradient and the radial temperature gradient of the temperature field in the crucible can be controlled, so that the growth rate of the crystal is increased, the stable growth environment of the crystal is ensured, a relatively large crystal edge diameter gradient is maintained, the edge quality is improved, and meanwhile, the silicon carbide single crystal with a relatively large size is obtained.
Owner:SICC CO LTD

Growing method of Y<1-x>RE<x>BCO superconducting layer of coated conductor through magnetron sputtering method

InactiveCN105525267AOvercome the thickness effectIncrease growth rateSuperconductors/hyperconductorsVacuum evaporation coatingFilm coatingFilm-coated tablet
The invention provides a growing method of a Y<1-x>RE<x>BCO superconducting layer of a coated conductor and particularly relates to a method for preparing the Y<1-x>RE<x>BCO superconducting layer on a lanthanum aluminum oxide (LAO) substrate through a magnetron sputtering method. The thickness effect of a YBCO superconducting layer is overcome effectively, and the superconducting current-carrying capability is improved. Firstly, a Y<1-x>RE<x>BCO magnetron sputtering target is prepared by partially replacing Y with Sm or Gd; then a reaction chamber is vacuumized until the vacuum degree is smaller than or equal to 5*10<-4> Pa, and the LAO substrate is heated to 600-700 DEG C; after 20-30 minutes, the chamber is filled with argon and oxygen, air pressure is stabilized at 30-60 Pa, the ratio of the oxygen to the argon is 1:2-1:3, and sputtering is started by taking Y<1-x>RE<x>BCO as the target. After sputtering is completed, the temperature is decreased to 400-450 DEG C, the chamber is filled with oxygen until the air pressure is maintained at 700-750 mbar, and annealing treatment is carried out for 40-80 minutes. After film coating is completed, the temperature is decreased to the room temperature, and the Y<1-x>RE<x>BCO superconducting layer growing on the LAO substrate is obtained. By means of the method, the coated conductor with the thickness of the Y<1-x>RE<x>BCO superconducting layer reaching 3 microns can be produced.
Owner:NANJING UNIV OF POSTS & TELECOMM
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