217 results about "Single crystal diamond" patented technology

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

The present application belongs to the field of diamond preparation, and discloses a high-quality single-crystal diamond preparation method for removing polycrystal defects. Through screen printing and plasma-assisted etching, the (100) surface around the black point-shaped polycrystal is directionally etched by cerium oxide, and a square groove is etched. Then, the slurry of iron oxide or nickel oxide is printed by screen printing, the black point-shaped polycrystal is covered with the slurry, and the black point-shaped polycrystal is removed by plasma-assisted etching. Then, the etched groove is filled by a horizontal growth process, so that the growth defects can be removed, and high-quality single-crystal diamond can be obtained. The present application can greatly reduce the waste rate of single-crystal diamond products and improve the utilization rate of single-crystal diamond. The present application is beneficial to saving production cost and improving efficiency.

The invention discloses a preparation method of a large-thickness (111) crystal orientation monocrystal diamond for a semiconductor, and aims to solve the problems of low growth rate and poor growth quality of the (111) crystal orientation diamond. The preparation method of the monocrystal diamond comprises the following steps: S1, heating and soaking a seed wafer in mixed acid; s2, performing etching treatment on the seed wafer by using hydrogen plasma; s3, oxygen is introduced into the vacuum cavity; s4, methane continues to be introduced into the vacuum cavity, the volume concentration of methane, hydrogen and oxygen is controlled, and microwave plasma chemical vapor deposition growth is carried out; s5, controlling the growth time; and S6, polycrystals on the surface of the blank are cut off. According to the method, the MPCVD process is adopted, and parameters such as gas concentration, temperature, pressure intensity and microwave energy in the growth process are controlled, so that homoepitaxial growth of the high-quality single crystal (111) crystal orientation diamond is realized, the production cost of the (111) crystal orientation diamond is reduced, and the realization of mass production of the (111) crystal orientation single crystal diamond is facilitated.

The invention belongs to the technical field of data processing, and discloses a dislocation density detection method and system of a single crystal diamond, a terminal and a storage medium, the method comprises the following steps: obtaining a single crystal diamond sample, and carrying out grinding and polishing treatment on the single crystal diamond sample to obtain an initial single crystal diamond sample; cleaning the initial single crystal diamond sample to obtain a target single crystal diamond sample; carrying out dislocation density detection treatment on the target single crystal diamond sample to obtain an initial dislocation density detection result, and constructing a target dislocation density measurement model according to the initial dislocation density detection result; and acquiring surface parameter data of the current monocrystal diamond to be detected, inputting the surface parameter data into the target dislocation density measurement model, and outputting a target dislocation density detection result. According to the method, the surface parameters of the single crystal diamond are controlled, and the dislocation density measurement model is established, so that the detection efficiency and accuracy of the dislocation density detection of the single crystal diamond can be effectively improved.

The invention discloses a design method for crystal face layout and grinding direction of a diamond biological slicing cutter, and relates to the technical field of ultra-precision machining. The method comprises the following steps of: representing the geometric shape of a cutter by adopting a surface patch, respectively taking three crystal orientations (100), (010) and (001) of a monocrystal diamond crystal as an x axis, a y axis and a z axis, and describing a geometric model of the cutter by giving spatial positions of important nodes; setting a characteristic space, and considering deflection angles of a cutter relative to three crystal orientations of the single crystal diamond and grinding angles on front and rear cutting surfaces; setting three optimization targets of machining efficiency, blade use strength and blade straightness; and executing a genetic algorithm to iteratively output a feasible cutter sharpening scheme. A feasible crystal face layout and a grinding direction are tested based on an NSGA-II multi-target genetic algorithm, a surface patch is adopted to represent the geometrical shape of a tool, three optimization targets of machining efficiency, cutting edge strength and cutting edge straightness are comprehensively considered, and an optimal layout scheme is obtained through screening iteration.

A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.

The invention relates to the technical field of diamond color center quantum light sources, in particular to a method for preparing a diamond color center in a positioning mode, and the method comprises the following steps that a single-face polished sapphire sheet serves as a substrate, and a microwave plasma chemical vapor deposition method is adopted for preparing a single crystal diamond with a (001) surface; preparing a metal layer on the surface of the monocrystal diamond by adopting a physical vapor deposition method, and dehumidifying and self-assembling to form balls; etching the surface of the monocrystal diamond (001) at a high temperature in a hydrogen atmosphere to form a conical pit structure with a different surface; and selectively growing a diamond color center in the cone pit by adopting a chemical vapor deposition method. Aiming at the problems that the existing ion implantation technology for positioning and preparing the diamond color center is difficult to realize nanoscale accurate control and high in cost, a foundation is laid for the integration and low-cost preparation of the high-purity and high-brightness diamond single photon source.

The invention discloses a manufacturing method of a grinding wheel for a high-uniformity and easy-to-sharpen grinding single crystal diamond cutter, and belongs to the field of superhard materials and products in machining, the manufacturing method mainly comprises the steps of wet mixing, tape casting, laser cutting, lamination, matrix surface treatment, integrated sintering, size processing, sharpening and the like, and finally the grinding wheel with the total thickness of an abrasive layer being 7-15 mm is formed. The grinding wheel layer is formed by intersecting and laminating a piece a and a piece b, the height of diamonds at the junction of the piece a and the piece b tends to be consistent, the diamond exposure height and smoothness are better compared with direct feeding sintering, meanwhile, the piece a can be designed to be of a porous structure through proper binder selection, and therefore the dressing efficiency is further improved, and the dressing effect is better. And higher processing quality and efficiency of the diamond cutter are indirectly improved.

The invention discloses a low-loss preparation method of a single crystal diamond wafer. The low-loss preparation method comprises the following steps: A, carrying out laser ablation on the surface of a single crystal diamond crystal ingot; b, performing laser-assisted polishing on the surface; c, the ultrafast pulse laser is modulated into N modified light spots, all the modified light spots are made to scan at the corresponding depth positions according to a preset path at the same time, and a scanning face formed by the same modified light spot covers the cross section of the single crystal diamond crystal ingot in the 100 crystal face direction, n laser modified layers distributed in the direction perpendicular to the 100 crystal face in the single crystal diamond crystal ingot are formed after scanning; d, performing stress-induced separation on the monocrystal diamond crystal ingot; e, performing laser ablation on the cutting surface of the single crystal diamond wafer; and F, the cutting face is subjected to laser-assisted polishing. According to the low-loss preparation method of the single-crystal diamond wafer, the material loss of the single-crystal diamond crystal ingot can be reduced, and the wafer yield of the single-crystal diamond crystal ingot can be increased.

The invention relates to the technical field of ceramic tiles, in particular to a sapphire single crystal diamond glaze super-wear-resistant ceramic tile and a preparation method thereof. The sapphire single crystal diamond glaze super wear-resistant ceramic tile is prepared from the following raw materials in parts by weight: high-purity alpha-Al2O3 powder, nano-diamond turbid liquid, rare earth modified zirconium silicate, a gas-phase transport agent, a lattice matching cosolvent and zinc oxide whiskers. According to the invention, the high-purity alpha-Al2O3 epitaxially grows on the surface of the nano-diamond to form an atomic-scale coherent interface, the bonding strength is high, the high hardness of sapphire and the wear resistance of diamond are integrated, the self-sharpening characteristic is endowed to the glaze layer by a micro-scale interlocking structure, a new hard interface is exposed in the wear process, the surface wear resistance is continuously maintained, and the service life of the glaze layer is prolonged. The problem of performance degradation after traditional materials are abraded is solved.

The invention discloses a diamond / gallium oxide ultraviolet detector and a preparation method thereof. The diamond / gallium oxide ultraviolet detector sequentially comprises a single crystal diamond substrate, an intrinsic single crystal diamond epitaxial layer, an finger-type ohmic electrode, a gallium oxide layer and a finger-type Schottky electrode from bottom to top, the finger-type ohmic electrode comprises an ohmic electrode strip array and an ohmic electrode pad which are connected with each other; the finger-type Schottky electrode comprises a Schottky electrode strip array and a Schottky electrode pad which are connected with each other; and the ohmic electrode strip array and the Schottky electrode strip array form a different-plane interdigital structure. Defects formed by the diamond layer and the gallium oxide layer are depleted, capture or recombination of interface defects to photon-generated carriers is reduced, electric field distribution can be optimized, collection of the carriers is facilitated, and the performance of the device is improved.

The invention provides a mirror surface processing method for a pure nickel heater, which comprises the following steps of: roughly milling the surface of the pure nickel heater by adopting a flat-bottomed milling cutter, and then finely milling by adopting a single crystal diamond milling cutter to obtain roughness Ralt; the invention discloses a pure nickel heater with a mirror surface effect. According to the method, the surface of the pure nickel heater is subjected to rough milling and finish milling treatment by adopting the specific cutter, so that the pure nickel heater which meets the roughness requirement and has the mirror surface effect can be obtained, and the subsequent use requirement is met.

The utility model discloses a single crystal diamond forming milling cutter for aluminum alloy processing, which comprises a cutter handle part made of an alloy material, a blade mounting part made of an alloy material is arranged at the front end of the cutter handle part, and the blade mounting part is of a wedge-shaped structure; the first wedge-shaped surface of the wedge-shaped structure is perpendicular to the second wedge-shaped surface; a single crystal diamond blade is arranged on the second wedge-shaped surface; the single crystal diamond blade is of a second wedge-shaped structure matched with the half outer contour of the second wedge-shaped face. A first machining inclined plane is arranged at the top of the second wedge-shaped structure, and a first machining plane is arranged at the tail end of the second wedge-shaped structure; the first machining inclined surface and the first machining plane are connected through a second machining inclined surface and a first machining vertical surface; the first machining slope is provided with a first axial rake angle and a second axial rake angle. According to the utility model, the sharpness and the service life are both considered, and meanwhile, the high-quality processing of an aluminum alloy (AL6063) material can be completed.

This invention discloses a method for repairing defects in single-crystal diamond, comprising removing the defective portion to form a pit and preparing a defect-free patch. After cleaning, the patch is filled into the pit, ensuring that the crystal orientation of the patch is consistent with that of the diamond surrounding the pit. The single-crystal diamond with the patch then is fed into a growth system for growth to obtain a single-crystal diamond with the defect repaired. Compared with existing technologies, this invention not only has high repair efficiency but can also effectively repair defects with a side length of 2.0 mm or more.

The application discloses a diamond mosaic splicing homogeneous epitaxial growth method and system based on AI intelligent control, and belongs to the technical field of single crystal diamond material preparation. A plurality of single crystal diamond substrates are spliced into a large-size deposition base in a mosaic manner; an initial geometric shape and a micro-gap distribution of a splicing seam are identified through a pre-trained AI visual detection model; a global process parameter combination and a staged deposition strategy for promoting lateral epitaxy are generated by combining a homogeneous epitaxial growth thermodynamic database and an AI process optimization model; during the growth process, a morphology evolution image and plasma state data of the splicing seam area are collected in real time, and a gap healing trend is predicted by an AI closed-loop control model, and the global process parameters are dynamically adjusted. Through AI accurate control of the global process parameters, the lateral epitaxy and the grain boundary migration at the splicing seam can be controlled to occur, and finally a seamless integrated large-size single crystal diamond is obtained.

The invention discloses a magnetic attraction device and method for CVD single crystal diamond laser processing, and relates to the field of CVD single crystal diamond laser processing, the magnetic attraction device comprises a main magnetic attraction part and an auxiliary magnetic attraction positioning part, the auxiliary magnetic attraction positioning part is provided with multiple groove widths and is matched with single crystals with different thicknesses, positioning grooves are designed in the two sides of the groove widths, and a first magnetic attraction part and a second magnetic attraction part can be pre-positioned; a magnetic panel of the main magnetic part is matched with a dovetail base and a supporting part, the magnetic panel, the dovetail base and the supporting part are fixed through screws, the magnetic panel is fixed with a positioning plate and a guide plate through screws, a round strong magnetic positioning hole is formed in the positioning plate, a guide hole is formed in the guide plate, and a strong magnet is placed in the positioning hole and is fixed to the magnetic panel in an adsorption mode; rapid vertical magnetic attraction fixing of single crystals can be achieved, rapid clamping and disassembling in CVD single crystal diamond laser cutting are achieved, and the technical problem that in traditional CVD single crystal diamond laser cutting, non-value-added procedures such as glue bonding, screw fixing and ultrasonic cleaning are used, and consequently machining waste is caused is solved.

Provided is a synthetic single crystal diamond containing conjugants each composed of one vacancy and one boron atom, wherein the concentration of boron atoms based on atom numbers is 0.1 ppm or more and 100 ppm or less.

The polishing device comprises a base, a two-dimensional driving mechanism is installed above the base through a support and drives a vertical electric cylinder to move forwards, backwards, leftwards and rightwards, a pressure sensor is installed at the lower end of a telescopic shaft of the vertical electric cylinder, and the two-dimensional driving mechanism drives the vertical electric cylinder to move forwards, backwards, leftwards and rightwards. A mounting plate is mounted at the bottom of the pressure sensor, and a detachable composite buffering polishing head is mounted at the bottom of the mounting plate. Mixed liquid nozzles are mounted on the left side and the right side of the composite buffer polishing head; according to the polishing device for manufacturing the ultrathin single crystal diamond substrate, chemical and mechanical cooperative polishing and flexible buffering compensation are achieved, a rectangular hole of the mounting frame allows the polishing head to move slightly, local stress concentration is eliminated, polishing uniformity is improved, the green manufacturing characteristic is achieved, modular maintenance is achieved, the detachable composite buffering polishing head and a bolt are designed to be replaced quickly, and maintenance is convenient.

The invention relates to the technical field of silicon wafer processing, and discloses a method for growing a single crystal diamond on a silicon wafer, which comprises the following steps of: by taking an atomic lattice of the silicon wafer as a template and the silicon wafer as a substrate, epitaxially growing silicon atoms and carbon atoms layer by layer by using an atomic layer deposition method, epitaxially growing silicon first and then adding carbon layer by layer during deposition, the silicon wafer with the single crystal diamond surface is formed through one hundred to one thousand layers, and the ratio of carbon to silicon is from initial zero to final 100%, so that the silicon wafer with the single crystal diamond surface is obtained. According to the method for growing the single crystal diamond from the silicon wafer, the existing huge silicon wafer industry is used, the silicon wafer serves as a substrate, epitaxial layer by layer is carried out through an atomic layer deposition (ALD) method, gas components of the ALD method are silane diluted by hydrogen and methane, during deposition, epitaxial silicon is carried out firstly, then carbon is added layer by layer, and the single crystal diamond surface silicon wafer is formed after one hundred to one thousands of layers; therefore, the stress of heteroepitaxy can be reduced to the minimum, and the monocrystal diamond can inherit extremely few defects of liquid-phase crystal pulling growth of silicon crystals.

According to the method, a microwave plasma chemical vapor deposition method is adopted, CH4 / CO2 mixed gas with the high carbon dioxide concentration (larger than or equal to 25%) serves as the carbon source, auxiliary gas is added, the high-quality single crystal diamond is prepared, and the growth rate of the single crystal diamond is remarkably increased; the method solves the problem that the growth rate of the high-carbon-dioxide-concentration carbon source deposition monocrystal diamond is low, and the method has important significance on conversion of carbon dioxide into diamond.

This invention provides a self-splicing large-size single-crystal diamond substrate and its manufacturing method, belonging to the field of single-crystal diamond technology. The method includes the following steps: in-situ printing a light-treated resin barrier layer on the non-splicing surface of the single-crystal diamond; mechanically grinding the splicing surface of the single-crystal diamond; immersing the splicing surface of the single-crystal diamond in a magnetic nanoparticle precursor dispersion; aligning the splicing surfaces of the single-crystal diamonds to be spliced ​​with each other, applying an external magnetic field in a specific direction to align and tightly adhere the splicing surfaces; subjecting the spliced ​​diamond to high-temperature annealing in a reducing atmosphere or vacuum environment; and placing the spliced ​​diamond in a strong acid cleaning solution to dissolve and remove residual metals and impurities from the diamond surface. This invention utilizes small-size single-crystal diamonds with excellent surface quality for splicing to obtain large-size single-crystal diamonds, preserving the thermal and mechanical properties of single-crystal diamonds while achieving wafer-level large-size expansion.

The invention relates to the technical field of hard alloy for synthesis of superhard materials, and particularly discloses a hard alloy holding-up hammer for synthesis of high-purity large single crystal diamond and a preparation method of the hard alloy holding-up hammer. The holding-up hammer material is composed of the following components in percentage by weight: 80%-88% of WC, 4%-8% of Co, 2%-5% of TaC, 3%-7% of TiC and 0.5%-2% of Cr3C. Wherein WC serves as a hard phase, Co serves as a binding phase, TaC inhibits grain growth, TiC nanoparticles are dispersed and distributed to form a pinning effect, and Cr3C2 improves the wettability of the binding phase and improves the oxidation resistance. The preparation method comprises the steps of raw material selection and ball-milling mixing, vacuum drying and sieving, cold pressing and cold isostatic pressing forming, gradient sintering and grinding and subzero treatment.

A stack includes: a ruthenium film; and a diamond film that is an epitaxial film formed on the ruthenium film, wherein a crystal plane of a surface of the ruthenium film is a (0001) plane, and a crystal plane of a surface of the diamond film is a (111) plane. A method of manufacturing a stack includes: a step of forming a ruthenium film; and a step of heteroepitaxially growing a diamond film on the ruthenium film, wherein a (111) plane of the diamond film is heteroepitaxially grown on a (0001) plane of the ruthenium film.

The application discloses a double-face reversible drawing single-crystal diamond die for drawing 10 mu m high-strength stainless steel micro-wire and a use method thereof, and belongs to the technical field of metal micro-wire precision machining. The die comprises a die sleeve and a single-crystal diamond die core, the die core is internally provided with an axial through drawing die hole, and both end faces of the die can be used as wire feeding working ends. The die hole is sequentially provided with a compression zone, a sizing zone and an outlet zone along a drawing direction. In use, one end face is used first, and after being worn, the die is turned over to use the other end face. The application solves the problems of existing single-side die, such as concentrated wear, low material utilization rate, short service life and high production cost, effectively prolongs the service life of the die, improves the utilization rate of the diamond material, reduces the wire breakage rate and product size fluctuation, does not need to reform the existing equipment, is suitable for 10 mu m high-strength stainless steel micro-wire finished product and finishing drawing processes, and has a wide industrial application prospect.

The application relates to a preparation method for reducing the surface friction of single crystal diamond and application, and the preparation method comprises the following steps: step one, determining a predetermined working environment of a single crystal diamond base material; step two, determining a surface energy regulation direction according to the predetermined working environment; when the predetermined working environment is a gas phase environment, the regulation direction is to reduce the surface energy, or when the predetermined working environment is a liquid phase environment, the regulation direction is to increase the surface energy; step three, according to the regulation direction determined in step two, selecting a corresponding surface energy regulation method to modify the friction working surface of the single crystal diamond. The preparation method is combined with the design of the surface energy directional regulation of the single crystal diamond crystal face intrinsic friction characteristic ordering rule, can effectively inhibit the friction failure of micro components, and prolongs the service life of a device.

The invention belongs to the technical field of diamond cultivation, and discloses a splicing epitaxy method and system of single crystal diamond, a terminal and a storage medium, the method comprises the following steps: obtaining a single crystal diamond substrate, and carrying out first epitaxial growth on the single crystal diamond substrate to obtain a single crystal diamond epitaxial layer; performing vertical cutting treatment on the monocrystal diamond epitaxial layer to obtain a first epitaxial layer and a second epitaxial layer; carrying out polishing treatment, first etching treatment and arrangement treatment on the first epitaxial layer and the second epitaxial layer to obtain an arranged epitaxial layer; and carrying out second etching treatment, joint repair growth and second epitaxial growth on the arranged epitaxial layer to obtain the target monocrystal diamond. According to the method, epitaxial growth and vertical cutting treatment are carried out on the single crystal diamond substrate, the in-plane deflection angle consistency of spliced crystals can be guaranteed, arrangement and seam repair are carried out according to growth lines, and the splicing success rate and growth quality of the large-size single crystal diamond are effectively improved.

The application relates to a method for separating a diamond single crystal by laser, and relates to the technical field of diamond cutting. A modified layer is formed on the single crystal diamond by a picosecond laser, and then the single crystal diamond is separated along the modified layer by a cleaving machine. The application has the advantages of high efficiency, high product breaking resistance, no taper on the broken surface, and no ablation marks on the upper and lower surfaces.

The invention discloses a periodic defect-based low-dielectric-loss monocrystal diamond preparation method, which belongs to the field of semiconductors, and comprises the following steps: providing a diamond substrate; the diamond substrate is subjected to photoetching treatment, so that a dot matrix pattern is formed on the upper surface of the diamond substrate through photoetching, and the distance between every two adjacent dots in the dot matrix pattern is equal to the wavelength corresponding to the frequency of the external electric field; an etching process or an ion implantation process is adopted, the area where each point in the dot matrix pattern is located is damaged, a diamond damaged substrate is obtained, and the upper surface of the diamond damaged substrate is provided with a periodic defect dot matrix structure; growing a single crystal diamond layer with periodic defects on the upper surface of the diamond damaged substrate, and adjusting a growth process to enable the defects on the single crystal diamond layer to be line defects penetrating through the single crystal diamond layer; and carrying out fragmentation treatment on the damaged diamond substrate and the monocrystal diamond layer to obtain a monocrystal diamond finished product with periodic defects.

A single crystal diamond material comprising a single crystal diamond and an altered portion present on the outer periphery of the single crystal diamond, wherein the nitrogen atom content in the single crystal diamond is 1 ppm or more and 2000 ppm or less based on the atomic number, and the single crystal diamond material has a core electron excitation spectrum of the altered portion obtained by electron energy loss spectroscopy using a transmission electron microscope, in which an energy loss of π exists in a range of 285 eV±5 eV. * Maximum intensity of the peak Iπ * and the energy loss is in the range of 291±5 eV. * Maximum intensity of the peak Iσ * Ratio to Iπ * / Iσ * is 0.15 or more, and in the altered portion, the percentage {N1 / (N1+N2)}×100 of the number N1 of primary carbon atoms to the sum N1+N2 of the number N1 of primary carbon atoms constituting amorphous carbon and the number N2 of secondary carbon atoms constituting graphite is 90% or more.

The invention relates to a method for purifying primary monocrystal diamond powder, which comprises the following steps of: (1) pretreatment stage: pretreating diamond particles subjected to coarse separation, and carrying out ultrasonic treatment and cleaning by adopting a mixed acid of a hydrochloric acid solution with the mass percent concentration of 30% and a nitric acid solution with the mass percent concentration of 50%; (2) treating for 60-90 minutes at the temperature of 80-120 DEG C by adopting a microwave-assisted ionic liquid method, then carrying out solid-liquid separation, and recovering ionic liquid; (3) carrying out ultrasonic wave-hydrogen peroxide composite oxidation treatment on the treated diamond; and (4) carrying out ultrapure water ultrasonic cleaning on the diamond subjected to composite oxidation treatment, and then carrying out vacuum drying. Physical field, green chemistry and mild oxidation technologies are organically combined, the highest temperature of the whole process does not exceed 120 DEG C, etching, oxidation and lattice damage caused by high temperature and strong acid to the diamond surface are avoided from the source, the integrity and high strength of primary single crystals can be kept, and the method is suitable for large-scale production. And a novel efficient, high-quality and environment-friendly diamond purification path is formed.