21 results about "Single crystal diamond" patented technology

This invention discloses a method for repairing defects in single-crystal diamond, comprising removing the defective portion to form a pit and preparing a defect-free patch. After cleaning, the patch is filled into the pit, ensuring that the crystal orientation of the patch is consistent with that of the diamond surrounding the pit. The single-crystal diamond with the patch then is fed into a growth system for growth to obtain a single-crystal diamond with the defect repaired. Compared with existing technologies, this invention not only has high repair efficiency but can also effectively repair defects with a side length of 2.0 mm or more.

This invention provides a self-splicing large-size single-crystal diamond substrate and its manufacturing method, belonging to the field of single-crystal diamond technology. The method includes the following steps: in-situ printing a light-treated resin barrier layer on the non-splicing surface of the single-crystal diamond; mechanically grinding the splicing surface of the single-crystal diamond; immersing the splicing surface of the single-crystal diamond in a magnetic nanoparticle precursor dispersion; aligning the splicing surfaces of the single-crystal diamonds to be spliced ​​with each other, applying an external magnetic field in a specific direction to align and tightly adhere the splicing surfaces; subjecting the spliced ​​diamond to high-temperature annealing in a reducing atmosphere or vacuum environment; and placing the spliced ​​diamond in a strong acid cleaning solution to dissolve and remove residual metals and impurities from the diamond surface. This invention utilizes small-size single-crystal diamonds with excellent surface quality for splicing to obtain large-size single-crystal diamonds, preserving the thermal and mechanical properties of single-crystal diamonds while achieving wafer-level large-size expansion.

The application relates to a preparation method for reducing the surface friction of single crystal diamond and application, and the preparation method comprises the following steps: step one, determining a predetermined working environment of a single crystal diamond base material; step two, determining a surface energy regulation direction according to the predetermined working environment; when the predetermined working environment is a gas phase environment, the regulation direction is to reduce the surface energy, or when the predetermined working environment is a liquid phase environment, the regulation direction is to increase the surface energy; step three, according to the regulation direction determined in step two, selecting a corresponding surface energy regulation method to modify the friction working surface of the single crystal diamond. The preparation method is combined with the design of the surface energy directional regulation of the single crystal diamond crystal face intrinsic friction characteristic ordering rule, can effectively inhibit the friction failure of micro components, and prolongs the service life of a device.

The application provides a preparation method of a flat epitaxial diamond semiconductor and relates to the technical field of diamond semiconductor preparation. The preparation method comprises the following steps: cleaning a microwave plasma device chamber, pretreating a single crystal diamond substrate, etching the single crystal diamond substrate and preparing a hydrogen-terminated diamond semiconductor, wherein a magnetic field generated by a magnetic excitation coil is used to constrain the microwave plasma in the microwave vapor deposition device, so that carbon atoms are uniformly and rapidly deposited on the single crystal diamond substrate, and finally, a single crystal diamond epitaxial layer with a flat surface is obtained. The preparation method of the application can synergistically optimize the carrier mobility, surface density and square resistance of the hydrogen-terminated diamond semiconductor, is simple and easy to operate, has low cost and low energy consumption, is high in efficiency, and is beneficial to industrial large-scale production and popularization.

The present application relates to the field of diamond grinding equipment, in particular to a single crystal diamond nanometer level profile grinding equipment, a nanometer air floatation C shaft is installed on the top of the upper end of the marble bed body, vibration-free rotating arc is ensured, the rotating precision is controlled to be below 30 nanometers, a fine adjustment X direction base is installed on the upper end of the nanometer air floatation C shaft, a coarse and fine differential head is installed on the fine adjustment X direction base, a fine adjustment Y direction base is installed on the upper end of the coarse and fine differential head, a planetary main shaft is installed on the side of the upper end of the marble bed body corresponding to the fine adjustment shaft, an air floatation main shaft is installed on the front of the planetary main shaft, the air floatation main shaft is arranged on the eccentric side of the front of the planetary main shaft, and a grinding wheel is installed on the air floatation main shaft, so that the air floatation main shaft can rotate while the planetary main shaft moves simultaneously, revolution and rotation are realized, tools are simultaneously ground, each direction of the single crystal diamond is adapted, uniform grinding is realized, and super-precision profile grinding is achieved.

The application discloses a method for improving nucleation density of large-size single crystal diamond hetero-epitaxy based on iridium-amorphous carbon pre-implantation layer, which comprises the following steps: firstly, pretreating a single crystal silicon substrate through acid washing, acetone or ethanol ultrasonic cleaning method; sequentially epitaxially growing a nanometer-thickness yttrium stabilized zirconium oxide (YSZ) single crystal film buffer layer and an iridium single crystal film functional layer on the treated single crystal silicon surface; then, pre-implanting an amorphous carbon film on the surface of the iridium / YSZ composite substrate, and performing vacuum annealing stress relief and polishing graphite phase large particle removal treatment on the amorphous carbon film to obtain a smooth and flat surface; finally, epitaxially growing single crystal diamond on the surface of the iridium-amorphous carbon pre-implantation layer, and cutting and removing the composite substrate to obtain large-size single crystal diamond hetero-epitaxy. The method utilizes the amorphous carbon implantation layer to accelerate the dissolution-precipitation process of carbon ions entering the iridium film to form a supersaturated solid solution during bias nucleation, increases nucleation sites, and improves nucleation density, which is of great significance for preparing large-size high-quality single crystal diamond.

This invention discloses a method for growing highly mobile, heavily doped single-crystal diamond using a solid-state boron source. The aim of this invention is to address the problem that existing MPCVD boron doping processes introduce other non-doping source impurities, making it difficult to achieve high-concentration boron doping. The method for growing heavily doped single-crystal diamond involves: 1. Polishing the surface of a single-crystal diamond substrate; 2. Heating the diamond substrate at high temperature in a strong oxidizing mixed acid; 3. Placing the single-crystal diamond substrate on a solid boron sheet and introducing a mixture of hydrogen and methane gas to grow a boron-doped diamond film on the substrate surface; 4. Performing a final surface cleaning. This invention employs microwave plasma chemical vapor deposition (PCCVD) using a solid boron sheet as the boron source. The carbon atoms provided by methane promote the release of boron atoms from the solid boron sheet, effectively facilitating the entry of doped atoms into the diamond lattice, thus achieving the preparation of high-quality, high-mobility doped single-crystal diamond with a boron doping concentration of 10⁻⁶. 20 cm ‑3 ~10 21 cm ‑3 .

Provided are a method for producing a single crystal diamond capable of synthesizing a single crystal diamond having excellent durability at a low cost in a short time, and the single crystal diamond. The method for producing the single crystal diamond employs a high-temperature and high-pressure method, and the single crystal diamond is synthesized by exposing raw materials composed of amorphous carbon and a carbon compound to a pressure and a temperature in a thermodynamically stable region of the diamond in a carbon phase equilibrium diagram.

The application discloses a diamond photon integrated circuit preparation method, which comprises the following steps: firstly, ion implantation is adopted on a seed crystal substrate; then, after heat treatment of the implanted single crystal diamond sheet, diamond with low defect density is regrown on the single crystal diamond sheet, so as to realize the preparation of ultrathin single crystal diamond; in addition, a tunable resonator with a diamond H-shaped structure and a high quality factor is prepared; at the same time, a single photon detector is manufactured on the diamond substrate, and the prepared single photon detector is characterized; finally, on the single crystal diamond film with a solid color center light source and a resonator structure, a diamond waveguide is prepared, and finally, an array of superconducting nanowire single photon detectors is prepared, so that the whole photon integrated circuit with diamond as a platform material is manufactured.

This application relates to the fields of precision packaging and vacuum welding technology, and in particular to a method and structure for sealing single-crystal diamond and oxygen-free copper with extremely high hermeticity. The method includes: cleaning and activating the surfaces of the single-crystal diamond and the oxygen-free copper framework respectively; placing Ag-Cu-Sn-Ti brazing filler metal into a parameterized stepped drill groove; placing the diamond and applying uniform pre-pressure; and obtaining the sealed component after high-vacuum segmented heating and holding and extremely slow cooling. This solves the problems of traditional sealing technology, such as the need for pre-metallization treatment of diamond, difficulty in simultaneously achieving hermeticity and thermal conductivity, large residual stress at the interface that easily leads to diamond cracking, and high-temperature brazing that easily causes diamond graphitization.

The application provides a foamed diamond composite sheet and a preparation method thereof, and belongs to the technical field of diamond polycrystal. The foamed diamond micro powder and a metal catalyst are mixed to obtain mixed powder; the mixed powder is hot-pressed with a hard alloy as a substrate to obtain the foamed diamond composite sheet. The foamed diamond micro powder is used as raw material, and has a larger specific surface area and contact point than single crystal diamond, which is beneficial to the generation of D-D bond; the metal catalyst is doped in the foamed diamond micro powder, and the diamond surface will be graphitized under the hot-pressing environment of high temperature and high pressure; the graphitized carbon will be dissolved in the catalyst, and when the dissolved carbon is precipitated from the catalyst, it is converted into diamond again, at this time, the newly converted diamond grows on the diamond surface which is not graphitized, so that the diamond and diamond are connected by D-D bond, the aggregation between the diamonds is strengthened, and the wear ratio of the diamond composite sheet is improved.

This invention discloses a 6-inch mosaic-jointed single-crystal diamond wafer and its preparation method. In the field of large-size diamond material preparation technology, this invention addresses the problems of difficulty in directly preparing 6-inch single-crystal diamond wafers from single seed crystals, low crystal orientation matching accuracy, stress concentration at the joint interface, insufficient interface fusion, and poor wafer flatness in traditional splicing growth. The invention proposes a wafer structure consisting of multiple single-crystal diamond seed crystals arranged in a mosaic array, with a joint interface formed between adjacent single-crystal diamond seed crystals. A diamond fusion layer fills the joint interface and covers the surface of the single-crystal diamond seed crystals, and a surface functional layer is disposed on the surface of the diamond fusion layer. During preparation, seed crystal pretreatment, precise arrangement, interface pretreatment, fusion growth, and global flattening are performed sequentially. Through crystal orientation calibration, hydrogen plasma etching, and staged CVD growth, the joint interface is fully fused to form a continuous integral structure.

A method of growing a single crystal diamond material synthesized using a homoepitaxial chemical vapor deposition process. The method includes the steps of placing a free-standing diamond starting seed substrate on a substrate holder within a reaction chamber for chemical vapor deposition; feeding a process gas into the reaction chamber, the process gas including hydrogen gas; igniting a plasma within the reaction chamber to activate the process gas by adjusting the substrate temperature to increase to a first target substrate temperature; adding a carbon-containing gas to the process gas once the substrate temperature is at or near the first target substrate temperature to initiate diamond growth; and adjusting the substrate temperature to a second target substrate temperature that is different from the first target substrate temperature during the diamond growth.

A cooling system comprising a die; a bonding layer disposed over the die; an integrated micro-cooler disposed over the bonding layer; and a cooling lid disposed over the integrated micro-cooler, wherein the integrated micro-cooler comprises a first portion on the bonding layer and a second portion over the first portion, wherein the second portion comprises a plurality of trenches and a partition wall surrounding the plurality of trenches, wherein the integrated micro-cooler comprises a material of single-crystal diamond, and wherein the cooling lid comprises a fluid inlet conduit and a fluid outlet conduit through the cooling lid, the fluid inlet conduit and the fluid outlet conduit disposed over and open to the plurality of trenches.

The application discloses a 12-inch heteroepitaxial single crystal diamond wafer and a preparation method thereof, the wafer comprises, from bottom to top, a hetero-substrate layer, a gradient buffer layer and a single crystal diamond epitaxial layer, and the gradient buffer layer is composed of an AlN transition layer, a graphene intermediate layer and an amorphous diamond seed layer. During preparation, a 12-inch silicon wafer is first cleaned and surface-activated, then the gradient buffer layer is prepared in sequence, then the single crystal diamond epitaxial layer is grown by using a partition temperature control microwave plasma CVD process, and finally the finished product is obtained through stepwise annealing, grinding and chemical mechanical polishing treatment. The application can reduce heteroepitaxial lattice mismatch stress, improve wafer thickness uniformity and surface flatness, and is suitable for high-power semiconductor devices, high-frequency microwave devices and quantum chip substrates.

This invention discloses a single-crystal diamond polishing slurry for polishing high thermal conductivity aluminum nitride ceramic substrates, belonging to the field of precision ceramic material processing technology. By using single-crystal diamond instead of polycrystalline diamond, it significantly reduces raw material costs while achieving an equivalent or even higher polishing rate through increased solid content. The polyol lubricant significantly improves the friction state of the polishing interface, reducing micro-pits and scratches. The polished aluminum nitride ceramic substrate exhibits good surface uniformity, meeting the requirements for high-end electronic packaging substrates. In the surface additives prepared by this invention, the conjugated amine groups of the polyaniline segments can efficiently chelate free aluminum ions generated by hydrolysis, directly disrupting the chemical equilibrium of the hydrolysis reaction and preventing the forward hydrolysis. The silanol groups generated by the hydrolysis of the silane bridging agent can form hydrogen bonds and covalent bonds with the hydroxyl groups on the surface of the aluminum nitride substrate, forming a molecular-level dense passivation layer on the substrate surface, fundamentally isolating water molecules from contact with the aluminum nitride matrix.

The application discloses a kind of CVD diamond toughening methods, comprising: taking CVD diamond sample, the CVD diamond sample is CVD single crystal diamond or CVD polycrystalline diamond;The CVD diamond sample is pretreated, including using coating material to coat the diamond sample, and the diamond sample after coating is pre-pressed;The diamond sample after pretreatment is treated at high temperature and high pressure, so that trace graphite phase carbon in the diamond sample after pretreatment is converted into diamond phase, and microdefects are repaired.Cleaning is carried out to the CVD diamond sample after high temperature and high pressure treatment, and the coating material is removed, to obtain the diamond with enhanced toughness.The application effectively coats CVD diamond, and then controls the temperature rising rate and pressure rising rate and holding time in the high temperature and high pressure treatment process, to realize effective control of microstructure under the premise of maintaining high hardness of CVD diamond, and significantly improve the fracture toughness.

This invention belongs to the field of single-crystal diamond technology, specifically relating to a single-crystal diamond heat dissipation substrate material and its preparation method. The single-crystal diamond heat dissipation substrate material is prepared from a mixed powder. The mixed powder comprises the following raw materials in parts by weight: 15-25 parts single-crystal diamond, 70-85 parts Al-Mg alloy powder, 0.3-1.5 parts h-BN, and 0.5-1 parts silicon powder. This invention involves surface purification treatment of the single-crystal diamond, using hexagonal boron nitride to form a dotted non-uniform coating structure on the diamond surface, followed by uniform mixing of modified diamond particles with aluminum-magnesium alloy powder containing trace amounts of silicon powder. A segmented heating and gradient pressurization discharge plasma sintering process is employed to generate silicon carbide whiskers in situ in the exposed diamond area, combined with low-temperature annealing to eliminate residual stress within the material. The resulting composite material possesses excellent thermal conductivity, mechanical strength, wear resistance, and thermal cycling stability.

This invention provides a crack suppression method for laser cutting of single-crystal diamond, relating to the field of diamond laser processing technology. The method includes: applying a composite coating to the diamond surface along a predetermined laser cutting path; after the composite coating dries, performing laser cutting along the predetermined laser cutting path; during the laser cutting process, the composite coating remains in contact with the laser. This invention has extremely low implementation costs, requires no hardware modifications to existing laser cutting equipment, and is applicable to all types of laser cutting equipment.

The application relates to the technical field of artificial diamonds, in particular to a preparation method of single crystal diamond, which comprises the following steps: adding rare earth salt, nickel salt, iron salt and citric acid into deionized water to prepare a solution, adding expanded graphite, adjusting the pH value of the solution to 7-8, stirring in a 70-90 DEG C water bath until a colloid is formed, drying the colloid, first keeping the colloid at 400-500 DEG C for 10-60 min, then vacuum sintering the colloid at 1400-1500 DEG C for 30-60 min to assemble a synthesis block, and finally synthesizing single crystal diamond under high temperature and high pressure. The single crystal diamond synthesized by the method has the advantages of high yield, high static pressure strength and thermal shock toughness, small magnetic susceptibility, high purity and low impurity content.

This invention relates to a method for preparing a self-supporting single-crystal diamond film and a low-damage peeling process, belonging to the field of semiconductor materials and thin film preparation technology. It aims to achieve high-quality lateral epitaxial growth of diamond and complete peeling of the diamond film through a simple wet etching process. Specifically, the method includes substrate pretreatment, magnetron sputtering, lateral epitaxial growth, and chemical peeling. This invention offers advantages such as high-quality epitaxy, non-destructive peeling, reusable substrate, and wide applicability.