281 results about "Single crystal diamond" patented technology

The invention belongs to the technical field of crystal processing, and relates to a method for obtaining a single crystal diamond (111) surface wafer by using double-pulse-width laser. Femtosecond laser and picosecond laser are adopted for machining and stripping the blocky single crystal diamond to obtain a first crystal face (111), then femtosecond laser and picosecond laser are continuously adopted for machining and stripping the remaining blocky single crystal diamond, and the blocky single crystal diamond is obtained; the process for obtaining the crystal face (111) comprises the following steps of: scanning femtosecond laser on the crystal face (111) to process a plurality of graphitization modification lines which are full of the crystal face (111) and are parallel to each other, wherein the graphitization modification lines are parallel to the crystal orientation of a diagonal line [110] of the crystal face (001); carrying out scanning processing along the graphitization modification line by utilizing picosecond laser, so as to form a leap crack on the basis of the graphitization modification line of the crystal face (111); and then stripping is carried out. By means of the method, the wafer with the complete (111) face can be obtained through cutting in the ultra-thick (001) CVD monocrystal diamond.

The invention relates to a single crystal diamond and a preparation method and application thereof. The preparation method comprises the following steps: performing etching treatment on a diamond seed crystal; then introducing a carbon source, hydrogen and chlorine, and carrying out deposition growth of the monocrystal diamond; after deposition growth is finished, post-treatment is conducted, and the single crystal diamond is obtained. Chlorine and hydrogen are introduced in the chemical vapor deposition process at the same time, selective growth of a diamond phase can be promoted, chlorine can help to reduce formation of non-diamond carbon (such as graphite), and therefore the quality and the growth speed of diamond single crystals are improved, and the dislocation density is reduced.

The invention relates to the technical field of diamond processing, in particular to a diamond laser slicing method and device. The invention relates to a diamond laser slicing method. The method comprises the following steps: 1) utilizing a laser beam from 1t; 100 gt; the surface vertically enters the interior of the single crystal diamond, and a C-C bond is fractured by forming instant local high temperature so as to be carbonized to form graphite; (2) the laser beam is at the distance lt; 100 gt; the surface is at a certain depth and is scanned along the crystal orientation direction of # imgabs0 # or # imgabs1 #, and by controlling the position of a laser focal plane and the energy of the position, only modification points and a graphite layer are formed, or modification points are formed along lt; 111gt, 111gt; the surface-expanded cracks further form a crack expansion layer, and stress difference is generated between the crack expansion layer and the non-modified layer, so that the diamond layer is convenient to peel off. According to the method, arrangement and / or crack propagation of modified points can be accurately controlled, and stress distribution of a modified layer is optimized, so that high-precision diamond slicing is realized, and fragmentation and damage of a sample are avoided.

The invention relates to a method for laser separation of diamond single crystals, and relates to the technical field of diamond cutting, a modified layer is formed on a single crystal diamond through picosecond laser, and then the single crystal diamond is separated along the modified layer through a splitting machine. The method has the advantages that the efficiency is high, the product is not easy to break, the section has no taper, and the upper surface and the lower surface have no ablation marks.

The invention provides an extremely-hard high-toughness nano polycrystalline diamond composite material and a preparation method thereof. Belongs to the field of preparation of high-toughness extremely-hard materials, and is characterized in that the extremely-hard and high-toughness nano polycrystalline diamond composite material is composed of 70-90% by mole of cubic phase diamond and 10-30% by mole of cubic carbon. The preparation method of the extremely-hard high-toughness nano polycrystalline diamond composite material specifically comprises the following steps: by taking graphene as a raw material, pre-pressing the graphene into a cylinder in a mold, and carrying out high-temperature and high-pressure synthesis reaction on a pre-pressed sample, so as to obtain the extremely-hard high-toughness nano polycrystalline diamond composite material. And after the high-temperature and high-pressure synthesis reaction, cooling and pressure relief are performed to obtain the extremely-hard and high-toughness nano polycrystalline diamond composite material. Compared with the prior art, the extremely-hard high-toughness nano polycrystalline diamond composite material has two phases of cubic diamond and cubic carbon, and compared with single crystal diamond, the toughness is improved by 1-2 times under the condition that the hardness is kept.

The invention discloses a method, a system and a terminal for prolonging single growth time of single crystal diamond, and the method comprises the following steps: obtaining diamond seed crystals, putting the diamond seed crystals into a reaction cavity of MPCVD equipment, and carrying out vacuumizing treatment and glow starting treatment on the reaction cavity to obtain a first growth reaction environment of the diamond seed crystals; acquiring preset process gas, and inputting the preset process gas into the first growth reaction environment in a segmented manner according to preset concentration to obtain a second growth reaction environment; and according to the second growth reaction environment, carrying out staged heating treatment and seed crystal single growth treatment to obtain a target single crystal diamond after the single growth of the diamond seed crystal is finished. According to the method, the concentration proportion of various process gases in the reaction cavity is slowly increased according to different time periods, so that the growth reaction environment of the diamond seed crystals is controlled, the growth time of the monocrystal diamond can be effectively prolonged, and the cultivation quality of the monocrystal diamond is improved.

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

The present application belongs to the field of diamond preparation, and discloses a high-quality single-crystal diamond preparation method for removing polycrystal defects. Through screen printing and plasma-assisted etching, the (100) surface around the black point-shaped polycrystal is directionally etched by cerium oxide, and a square groove is etched. Then, the slurry of iron oxide or nickel oxide is printed by screen printing, the black point-shaped polycrystal is covered with the slurry, and the black point-shaped polycrystal is removed by plasma-assisted etching. Then, the etched groove is filled by a horizontal growth process, so that the growth defects can be removed, and high-quality single-crystal diamond can be obtained. The present application can greatly reduce the waste rate of single-crystal diamond products and improve the utilization rate of single-crystal diamond. The present application is beneficial to saving production cost and improving efficiency.

The invention discloses a single crystal diamond, a preparation method thereof and a chip, and relates to the technical field of semiconductors, and the preparation method of the single crystal diamond comprises the following steps: cutting a splicing side surface of a first diamond substrate and a splicing side surface of a second diamond substrate, the splicing side face of the first diamond substrate and the splicing side face of the second diamond substrate are both in a sawtooth shape. And splicing the sawtooth-shaped splicing side surface of the first diamond substrate with the sawtooth-shaped splicing side surface of the second diamond substrate to form the diamond substrate. An epitaxial layer is formed on the diamond substrate. The invention aims to realize seamless splicing of single crystal diamonds on splicing side surfaces of a crystal face (110). The single crystal diamond can be used as a substrate of a semiconductor device.

The invention provides a preparation method of a diamond CMOS (Complementary Metal-Oxide-Semiconductor Transistor) phase inverter and the phase inverter, and relates to the technical field of ultra-wide forbidden band semiconductor field effect transistor devices. Comprising the following steps: introducing a boron element and a nitrogen element into a microwave plasma chemical vapor deposition chamber through a gaseous source or a solid source so as to grow an n-type diamond epitaxy on a diamond substrate layer; hydrogen plasma is used for processing the diamond substrate with the deposited metal mask, so that a p-type active region is prepared on the second n-type diamond epitaxy, and the first n-type diamond epitaxy becomes an n-type active region; and preparing a source electrode, a drain electrode, an NMOS (N-channel Metal Oxide Semiconductor) field effect transistor gate dielectric layer, a PMOS (P-channel Metal Oxide Semiconductor) field effect transistor gate dielectric layer and a gate electrode on the p-type active region and the n-type active region. Therefore, a hydrogen terminal diamond preparation process and a diamond boron-nitrogen co-doping process are used, and a p-type active region and an n-type active region are simultaneously formed on the surface of the single-chip single crystal diamond, so that the preparation of the CMOS phase inverter is realized on the single-chip diamond.

The invention discloses a preparation method of a large-thickness (111) crystal orientation monocrystal diamond for a semiconductor, and aims to solve the problems of low growth rate and poor growth quality of the (111) crystal orientation diamond. The preparation method of the monocrystal diamond comprises the following steps: S1, heating and soaking a seed wafer in mixed acid; s2, performing etching treatment on the seed wafer by using hydrogen plasma; s3, oxygen is introduced into the vacuum cavity; s4, methane continues to be introduced into the vacuum cavity, the volume concentration of methane, hydrogen and oxygen is controlled, and microwave plasma chemical vapor deposition growth is carried out; s5, controlling the growth time; and S6, polycrystals on the surface of the blank are cut off. According to the method, the MPCVD process is adopted, and parameters such as gas concentration, temperature, pressure intensity and microwave energy in the growth process are controlled, so that homoepitaxial growth of the high-quality single crystal (111) crystal orientation diamond is realized, the production cost of the (111) crystal orientation diamond is reduced, and the realization of mass production of the (111) crystal orientation single crystal diamond is facilitated.

The invention belongs to the technical field of data processing, and discloses a dislocation density detection method and system of a single crystal diamond, a terminal and a storage medium, the method comprises the following steps: obtaining a single crystal diamond sample, and carrying out grinding and polishing treatment on the single crystal diamond sample to obtain an initial single crystal diamond sample; cleaning the initial single crystal diamond sample to obtain a target single crystal diamond sample; carrying out dislocation density detection treatment on the target single crystal diamond sample to obtain an initial dislocation density detection result, and constructing a target dislocation density measurement model according to the initial dislocation density detection result; and acquiring surface parameter data of the current monocrystal diamond to be detected, inputting the surface parameter data into the target dislocation density measurement model, and outputting a target dislocation density detection result. According to the method, the surface parameters of the single crystal diamond are controlled, and the dislocation density measurement model is established, so that the detection efficiency and accuracy of the dislocation density detection of the single crystal diamond can be effectively improved.

The invention discloses a design method for crystal face layout and grinding direction of a diamond biological slicing cutter, and relates to the technical field of ultra-precision machining. The method comprises the following steps of: representing the geometric shape of a cutter by adopting a surface patch, respectively taking three crystal orientations (100), (010) and (001) of a monocrystal diamond crystal as an x axis, a y axis and a z axis, and describing a geometric model of the cutter by giving spatial positions of important nodes; setting a characteristic space, and considering deflection angles of a cutter relative to three crystal orientations of the single crystal diamond and grinding angles on front and rear cutting surfaces; setting three optimization targets of machining efficiency, blade use strength and blade straightness; and executing a genetic algorithm to iteratively output a feasible cutter sharpening scheme. A feasible crystal face layout and a grinding direction are tested based on an NSGA-II multi-target genetic algorithm, a surface patch is adopted to represent the geometrical shape of a tool, three optimization targets of machining efficiency, cutting edge strength and cutting edge straightness are comprehensively considered, and an optimal layout scheme is obtained through screening iteration.

A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.

A method of manufacturing CVD single crystal diamond material using a chemical vapour deposition process. A first single crystal diamond material is provided having a largest linear dimension of at least 50 mm and a surface dislocation density of at least 107 cm-2. A first buffer layer is disposed on a surface of the first single crystal diamond material, the buffer layer configured to limit the propagation of dislocations. Diamond material is homoepitaxially grown on the first buffer layer on the first single crystal diamond material. A further buffer layer is disposed on a surface of the homoepitaxially grown diamond material, the further buffer layer configured to limit the propagation of dislocations. Further diamond material is homoepitaxially grown on the further buffer layer. The final two steps are repeated until the homoepitaxially grown diamond material has a surface dislocation density of less than 105 cm-2.

The invention relates to the technical field of diamond color center quantum light sources, in particular to a method for preparing a diamond color center in a positioning mode, and the method comprises the following steps that a single-face polished sapphire sheet serves as a substrate, and a microwave plasma chemical vapor deposition method is adopted for preparing a single crystal diamond with a (001) surface; preparing a metal layer on the surface of the monocrystal diamond by adopting a physical vapor deposition method, and dehumidifying and self-assembling to form balls; etching the surface of the monocrystal diamond (001) at a high temperature in a hydrogen atmosphere to form a conical pit structure with a different surface; and selectively growing a diamond color center in the cone pit by adopting a chemical vapor deposition method. Aiming at the problems that the existing ion implantation technology for positioning and preparing the diamond color center is difficult to realize nanoscale accurate control and high in cost, a foundation is laid for the integration and low-cost preparation of the high-purity and high-brightness diamond single photon source.

The invention discloses a manufacturing method of a grinding wheel for a high-uniformity and easy-to-sharpen grinding single crystal diamond cutter, and belongs to the field of superhard materials and products in machining, the manufacturing method mainly comprises the steps of wet mixing, tape casting, laser cutting, lamination, matrix surface treatment, integrated sintering, size processing, sharpening and the like, and finally the grinding wheel with the total thickness of an abrasive layer being 7-15 mm is formed. The grinding wheel layer is formed by intersecting and laminating a piece a and a piece b, the height of diamonds at the junction of the piece a and the piece b tends to be consistent, the diamond exposure height and smoothness are better compared with direct feeding sintering, meanwhile, the piece a can be designed to be of a porous structure through proper binder selection, and therefore the dressing efficiency is further improved, and the dressing effect is better. And higher processing quality and efficiency of the diamond cutter are indirectly improved.

An electronic component, intermediate stage of production and method of making, comprising a stack having a metallic substrate, a single crystal diamond (SCD) wafer, and a metallic layer is disclosed. A first sintered metal layer forms a bond between the substrate and the SCD wafer, and a second sintered metal layer forms a bond between the SCD wafer and the metallic layer. The metallic layer is thinner than the metallic substrate.

A method manufactures a diamond heterostructure and separates diamond wafers from the heterostructure. The method provides a single-crystal substrate. A first single-crystal sacrificial layer is epitaxially formed on the base. The first sacrificial layer includes niobium nitrate and / or titanium nitride. A first single-crystal diamond layer is epitaxially formed on the first sacrificial layer. A second single-crystal sacrificial layer is epitaxially formed on the first diamond layer. The second sacrificial layer includes niobium nitrate and / or titanium nitride. A second single-crystal diamond layer is epitaxially formed on the second sacrificial layer.

The invention discloses a low-loss preparation method of a single crystal diamond wafer. The low-loss preparation method comprises the following steps: A, carrying out laser ablation on the surface of a single crystal diamond crystal ingot; b, performing laser-assisted polishing on the surface; c, the ultrafast pulse laser is modulated into N modified light spots, all the modified light spots are made to scan at the corresponding depth positions according to a preset path at the same time, and a scanning face formed by the same modified light spot covers the cross section of the single crystal diamond crystal ingot in the 100 crystal face direction, n laser modified layers distributed in the direction perpendicular to the 100 crystal face in the single crystal diamond crystal ingot are formed after scanning; d, performing stress-induced separation on the monocrystal diamond crystal ingot; e, performing laser ablation on the cutting surface of the single crystal diamond wafer; and F, the cutting face is subjected to laser-assisted polishing. According to the low-loss preparation method of the single-crystal diamond wafer, the material loss of the single-crystal diamond crystal ingot can be reduced, and the wafer yield of the single-crystal diamond crystal ingot can be increased.

The invention relates to the technical field of ceramic tiles, in particular to a sapphire single crystal diamond glaze super-wear-resistant ceramic tile and a preparation method thereof. The sapphire single crystal diamond glaze super wear-resistant ceramic tile is prepared from the following raw materials in parts by weight: high-purity alpha-Al2O3 powder, nano-diamond turbid liquid, rare earth modified zirconium silicate, a gas-phase transport agent, a lattice matching cosolvent and zinc oxide whiskers. According to the invention, the high-purity alpha-Al2O3 epitaxially grows on the surface of the nano-diamond to form an atomic-scale coherent interface, the bonding strength is high, the high hardness of sapphire and the wear resistance of diamond are integrated, the self-sharpening characteristic is endowed to the glaze layer by a micro-scale interlocking structure, a new hard interface is exposed in the wear process, the surface wear resistance is continuously maintained, and the service life of the glaze layer is prolonged. The problem of performance degradation after traditional materials are abraded is solved.

The invention discloses a diamond / gallium oxide ultraviolet detector and a preparation method thereof. The diamond / gallium oxide ultraviolet detector sequentially comprises a single crystal diamond substrate, an intrinsic single crystal diamond epitaxial layer, an finger-type ohmic electrode, a gallium oxide layer and a finger-type Schottky electrode from bottom to top, the finger-type ohmic electrode comprises an ohmic electrode strip array and an ohmic electrode pad which are connected with each other; the finger-type Schottky electrode comprises a Schottky electrode strip array and a Schottky electrode pad which are connected with each other; and the ohmic electrode strip array and the Schottky electrode strip array form a different-plane interdigital structure. Defects formed by the diamond layer and the gallium oxide layer are depleted, capture or recombination of interface defects to photon-generated carriers is reduced, electric field distribution can be optimized, collection of the carriers is facilitated, and the performance of the device is improved.

The invention provides a mirror surface processing method for a pure nickel heater, which comprises the following steps of: roughly milling the surface of the pure nickel heater by adopting a flat-bottomed milling cutter, and then finely milling by adopting a single crystal diamond milling cutter to obtain roughness Ralt; the invention discloses a pure nickel heater with a mirror surface effect. According to the method, the surface of the pure nickel heater is subjected to rough milling and finish milling treatment by adopting the specific cutter, so that the pure nickel heater which meets the roughness requirement and has the mirror surface effect can be obtained, and the subsequent use requirement is met.

The utility model discloses a single crystal diamond forming milling cutter for aluminum alloy processing, which comprises a cutter handle part made of an alloy material, a blade mounting part made of an alloy material is arranged at the front end of the cutter handle part, and the blade mounting part is of a wedge-shaped structure; the first wedge-shaped surface of the wedge-shaped structure is perpendicular to the second wedge-shaped surface; a single crystal diamond blade is arranged on the second wedge-shaped surface; the single crystal diamond blade is of a second wedge-shaped structure matched with the half outer contour of the second wedge-shaped face. A first machining inclined plane is arranged at the top of the second wedge-shaped structure, and a first machining plane is arranged at the tail end of the second wedge-shaped structure; the first machining inclined surface and the first machining plane are connected through a second machining inclined surface and a first machining vertical surface; the first machining slope is provided with a first axial rake angle and a second axial rake angle. According to the utility model, the sharpness and the service life are both considered, and meanwhile, the high-quality processing of an aluminum alloy (AL6063) material can be completed.

The utility model relates to the technical field of chemical vapor deposition growth, in particular to a cooling growth base station. A cooling growth base station comprises a cooling supporting table, the cooling supporting table is an integrated cooling supporting table formed through 3D printing, a cooling channel is formed in the integrated cooling supporting table in a printing mode, the deformation resistance of the cooling supporting table is integrally improved, and the cooling channel is formed in the integrated cooling supporting table in a printing mode, so that the cooling effect is improved. The structure, the position and the like of the cooling channel are more accurate, it is guaranteed that the cooling uniformity of the cooling supporting table is better, the cooling channel can be arranged close to the upper surface of the cooling supporting table as far as possible through integrated forming, the cooling capacity of the cooling supporting table is improved, temperature balance of the single crystal diamonds is guaranteed, and the growth quality of the single crystal diamonds is good.

This invention discloses a method for repairing defects in single-crystal diamond, comprising removing the defective portion to form a pit and preparing a defect-free patch. After cleaning, the patch is filled into the pit, ensuring that the crystal orientation of the patch is consistent with that of the diamond surrounding the pit. The single-crystal diamond with the patch then is fed into a growth system for growth to obtain a single-crystal diamond with the defect repaired. Compared with existing technologies, this invention not only has high repair efficiency but can also effectively repair defects with a side length of 2.0 mm or more.

The application discloses a diamond mosaic splicing homogeneous epitaxial growth method and system based on AI intelligent control, and belongs to the technical field of single crystal diamond material preparation. A plurality of single crystal diamond substrates are spliced into a large-size deposition base in a mosaic manner; an initial geometric shape and a micro-gap distribution of a splicing seam are identified through a pre-trained AI visual detection model; a global process parameter combination and a staged deposition strategy for promoting lateral epitaxy are generated by combining a homogeneous epitaxial growth thermodynamic database and an AI process optimization model; during the growth process, a morphology evolution image and plasma state data of the splicing seam area are collected in real time, and a gap healing trend is predicted by an AI closed-loop control model, and the global process parameters are dynamically adjusted. Through AI accurate control of the global process parameters, the lateral epitaxy and the grain boundary migration at the splicing seam can be controlled to occur, and finally a seamless integrated large-size single crystal diamond is obtained.

The invention discloses a method for preparing a diamond by taking BaCO3 as a raw material and the diamond. The method comprises the following steps: pre-pressing and forming barium carbonate powder, and drying to obtain a formed sample; wrapping the formed sample with a metal wrapping body, putting the formed sample wrapped by the metal wrapping body into a high-pressure sintering unit, and then drying; carrying out high-pressure and high-temperature sintering on the high-pressure sintering unit filled with the formed sample, and firstly pressurizing and then heating; and the metal inclusion is removed, and the formed sample is subjected to acid pickling to obtain the monocrystal diamond. According to the method, C in BaCO3 can be simply, efficiently and completely converted into diamond.

The utility model provides a substrate table for microwave plasma chemical vapor deposition, which is characterized in that the upper surface of an upper substrate is provided with a plurality of placing grooves, the bottom surface of the upper substrate opposite to the placing grooves is provided with a transfer groove, and vent holes are arranged between the side walls of the placing grooves and the transfer groove; the upper substrate is embedded in the lower substrate, and the transfer groove and the lower substrate form a transfer cavity; the lower substrate is provided with air inlet holes communicated with the transfer cavities. By arranging the air temperature control mechanism which directly sprays air to the bottom of the placing groove, the growth temperature of the diamond is effectively reduced, and after the middle rotating cavity is filled with gas, the temperature of the four side faces of the diamond substrate is controlled. According to the substrate table, cooling water circulation and air cooling are combined, and the gas flow at different positions of the substrate table can be controlled through control of a valve, so that precise temperature control is carried out on single crystal diamond seed crystals at each position, the growth temperature of each seed crystal is kept consistent, the whole growth process is higher in temperature, and the crystal quality is higher.

The invention discloses a magnetic attraction device and method for CVD single crystal diamond laser processing, and relates to the field of CVD single crystal diamond laser processing, the magnetic attraction device comprises a main magnetic attraction part and an auxiliary magnetic attraction positioning part, the auxiliary magnetic attraction positioning part is provided with multiple groove widths and is matched with single crystals with different thicknesses, positioning grooves are designed in the two sides of the groove widths, and a first magnetic attraction part and a second magnetic attraction part can be pre-positioned; a magnetic panel of the main magnetic part is matched with a dovetail base and a supporting part, the magnetic panel, the dovetail base and the supporting part are fixed through screws, the magnetic panel is fixed with a positioning plate and a guide plate through screws, a round strong magnetic positioning hole is formed in the positioning plate, a guide hole is formed in the guide plate, and a strong magnet is placed in the positioning hole and is fixed to the magnetic panel in an adsorption mode; rapid vertical magnetic attraction fixing of single crystals can be achieved, rapid clamping and disassembling in CVD single crystal diamond laser cutting are achieved, and the technical problem that in traditional CVD single crystal diamond laser cutting, non-value-added procedures such as glue bonding, screw fixing and ultrasonic cleaning are used, and consequently machining waste is caused is solved.