424 results about "Single crystal diamond" patented technology

The method of improving the optical properties of single crystal CVD diamond which comprises annealing the crystals at a temperature of up to 2200° C. and a pressure below 300 torr.

A synthetic single crystal diamond material comprising: a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects; a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region, wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, and wherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 μm which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second region of synthetic single crystal diamond material and positively charged defects in the first region of synthetic single crystal diamond material while being sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region of synthetic single crystal diamond material.

A method of manufacturing an optical element, the method comprising: growing a first layer of single crystal diamond material via a chemical vapour deposition technique using a gas phase having a first nitrogen concentration; growing a second layer of single crystal diamond material over said first layer via a chemical vapour deposition technique using a gas phase having a second nitrogen concentration, wherein the second nitrogen concentration is lower than the first nitrogen concentration; forming an optical element from at least a portion of the second layer of single crystal diamond material; and forming an out-coupling structure at a surface of the optical element for increasing out-coupling of light.

A solid state Raman laser includes a laser pump for producing a first radiation at a high power and at a first wavelength along an optical path, a solid Raman active medium in the optical path of the first radiation, the medium including single crystal diamond having a first surface and a second surface, where the first radiation at a high power produces stimulated Raman scattering in the medium and the medium generates a second radiation at a second wavelength, a first optical element in the optical path of the first radiation, wherein the first optical element allows the first wavelength to be transmitted and allows the second wavelength to be reflected, and a second optical element in the optical path of the first radiation, wherein the second optical element allows the first wavelength to be transmitted and allows the second wavelength to be reflected.

The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

A method of manufacturing a transistor, typically a MESFET, includes providing a substrate including single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD process and has high purity. The growth surface has a root-mean-square roughness of 3 nm or less, or is free of steps or protrusions larger than 3 nm. Further diamond layers are deposited on the growth surface to define the active regions of the transistor. An optional n+ shielding layer can be formed in or on the substrate, following which an additional layer of high purity diamond is deposited. A layer of intrinsic diamond may be formed directly on the upper surface of the high purity layer, followed by a boron doped (“delta doped”) layer. A trench is formed in the delta doped layer to define a gate region.

The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m^1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m^1/2. The invetnion further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

The present invention provides a cutting insert, a rotating cutting tool holding said cutting insert and a cutting method using the tool which is able to prevent the occurrence of burrs and to cut a smooth finished surface. In a rotating cutting tool which carries a plurality of cutting inserts, at least one insert is made of single crystal diamond 3A, and the minor cutting edge of the insert has an arc shaped portion whose radius is in the range of 10 mm or more to 500 mm or less. A high hard material other than single crystal diamond, for example PCD 3B, is used for the remainder of the cutting inserts. It is preferable that a cutting edge of single crystal diamond 3A be projected to the rotating axis direction in the range of 0.01 mm or more to 0.05 mm or less, compared with the cutting edges of high hard material.

Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

A process for growing by chemical vapor deposition a heteroepitaxial single crystal diamond is disclosed. The process provides a substrate which enables the growth of single crystal diamond which is vapor coated on an iridium film. An intermediate process for producing a composite composition with diamond nuclei is also described. Further described are composite compositions of metal oxide, iridium and single crystal diamond films or diamond nuclei. Single crystal diamond is useful in a variety of electronics and acoustics fields.

The invention relates to a preparation method of a high-performance diamond reinforced Al-matrix electronic packaging composite material, belonging to the field of metal-matrix composite materials. The preparation method is characterized by comprising the following steps: adding alloy elements into a pure Al matrix to prepare elemental mixed powder or Al alloy powder; uniformly mixing the elemental mixed powder or the Al alloy powder and diamond single crystal grains according to the volume percentage ratio of 75:25-40:60; adding the mixture into a graphite mold for carrying out spark plasma sintering, wherein the mixture is added at the heating speed of 50-100 DEG C/min until the sintering temperature is 580-800 DEG C and the sintering pressure is 30-40MPa; keeping the temperature and the pressure for 5-20min; and obtaining the high-performance diamond reinforced Al-matrix electronic packaging composite material after the sintering process finishes. The alloy elements comprise B, Si, Cr, Ti, Nb, Ag, Cu and the like. The material of the invention has the characteristics that the heat conductivity reaches 430W/m.K, the heat expansion coefficient is 6.40ppm/K, the compressive strength is 331MPa, and the density is only 3.13g/cm<3>. The invention effectively solves the problem of graphitization of single crystal diamond grains in the preparation process of the material, and has simple preparation processes and high production efficiency.

Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.

The invention discloses a manufacturing method of nanometer single-crystal diamond, which comprise the following steps: 1. grinding the single-crystal diamond particle with grain size more than nanometer grade; obtaining the micropowder of nanometer single-crystal diamond; 2. proceeding acid and alkaline disposal for micropowder; removing metal, graphite and silicon separately; 3. utilizing multi-pipe high-speed centrifuger to grade the micropowder into different grain sizes; obtaining the even grain size at 100nm or less.

Mold assemblies for forming optical elements including a support material and a molding material are disclosed and described. In one aspect, the molding material can include a single crystal diamond coupled to the support material and includes a working surface defining a shape to be imparted to an optical element to be pressed in the mold assembly. In another aspect, the molding material can include a PCD compact coupled to the support material and includes a working surface defining a shape to be imparted to an optical element to be pressed in the mold assembly. In yet a further aspect, the molding material may include a cermet composite coating material which provides a gradient of one material coupled to the support material to another material at a working surface of the molding material which defines a shape to be imparted to an optical element to be molded.

The present invention discloses a method for producing a mosaic diamond comprising implanting ions in the vicinity of the surfaces of a plurality of single-crystal diamond substrates arranged in the form of a mosaic, or in the vicinity of the surfaces of mosaic single-crystal diamond substrates whose back surfaces are bonded by a single-crystal diamond layer, so as to form non-diamond layers; growing a single-crystal diamond layer by a vapor-phase synthesis method; and separating the single-crystal diamond layer above the non-diamond layers by etching the non-diamond layers. The method of the present invention prevents the destruction of single-crystal diamond substrates by using a process that is simpler than conventional methods, thus allowing a large quantity of mosaic diamond to be produced in a stable and efficient manner.

The invention provides a hot pressed and diamond impregnated drill tooth applicable to a strong abrasive hard formation, which consists of a composite matrix and a natural diamond and is composed by a hot pressing and sintering process, wherein the composite matrix consists of 25-43% of WC (wolfram carbide), 15-25% of casting WC, 15-30% of Cu, 13-20% of Co, 11-17% of Ni, 1-3% of Mn, 1-2% of P and 0.5-1% of artificial single-crystal diamond powder; the natural diamond is a titanium coated natural diamond, the particle size range is 40-100 meshes, and the concentration is 75-110%; and the drill tooth is cylindrical. The drill tooth provided by the invention can be inlaid on a bit matrix in the vertical and horizontal ways and has cutting and grinding combined functions for rock breaking in the soft and hard interlaced and abrasive formation, high rock breaking efficiency and long service life.

The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterised by X-ray topography is less than 400 /cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterised by X-ray topography of less than 400 /cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1x10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.

The invention discloses a method for preparing a high-performance diamond semiconductor based on low-cost single crystal diamond, and belongs to the technical field of novel semiconductor preparation. The process steps include a, a commercially available cheap high temperature and pressure Ib-type single crystal diamond substrate is subjected to acid pickling to remove surface inclusions and form a passivated oxygen termination surface; b, the activated diamond surface is subjected to short time treatment by microwave hydrogen plasmas to expose a fresh C-C dangling bond; c, a high-quality single crystal diamond thin film is epitaxially grown on the fresh diamond surface by microwave plasma chemical vapor deposition to achieve the diamond thin film epitaxy with low dislocation density and impurity content mainly through the introduction of oxygen atoms with a self-healing function; and d, a carbon source and a oxygen source are turned off, the epitaxially grown diamond surface is treated by the microwave hydrogen plasmas to obtain a high hydrogen termination density, and the treated diamond surface is cooled to room temperature under a hydrogen atmosphere to obtain a diamond semiconductor with high conductivity. According to the invention, the process flow is simplified, the technical difficulty and the production cost are reduced, and the production cycle is shortened.

The present invention is a base material for growing a single crystal diamond comprising: at least a single crystal SiC substrate; and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.

The invention relates to a method for conforming grinding crystal orientation of a diamond, belonging to the technical field of ultra-precise machining. The method comprises the steps of (1) grinding a single crystal diamond so as to obtain an abrasive surface, wherein the abrasive surface and a crystal face to be ground intersect so as to form a ridge; (2) measuring the index of the crystal surface of the obtained abrasive surface; (3) measuring the index of the crystal surface of the surface to be ground; (4) measuring the included angle between a groove left in the surface to be processed due to processing and the ridge formed in step (1); (5) calculating according to the data measured from step (2) to step (4) so as to obtain the specific crystal orientation index or direction in the grinding direction. According to the method, the abrasive surface provided in advance and the surface to be ground form the ridge which is taken as the reference crystal orientation, in subsequent abrasive machining, characterization parameters of the specific grinding direction can be measured by a laser scanning confocal microscope only by marking initial crystal orientation on the crystal surface, and the space placing position and placing gesture of the diamond workpiece do not need to be recorded, so that the method is convenient and rapid.