536 results about "Single crystal diamond" patented technology

The invention belongs to the technical field of crystal processing, and relates to a method for obtaining a single crystal diamond (111) surface wafer by using double-pulse-width laser. Femtosecond laser and picosecond laser are adopted for machining and stripping the blocky single crystal diamond to obtain a first crystal face (111), then femtosecond laser and picosecond laser are continuously adopted for machining and stripping the remaining blocky single crystal diamond, and the blocky single crystal diamond is obtained; the process for obtaining the crystal face (111) comprises the following steps of: scanning femtosecond laser on the crystal face (111) to process a plurality of graphitization modification lines which are full of the crystal face (111) and are parallel to each other, wherein the graphitization modification lines are parallel to the crystal orientation of a diagonal line [110] of the crystal face (001); carrying out scanning processing along the graphitization modification line by utilizing picosecond laser, so as to form a leap crack on the basis of the graphitization modification line of the crystal face (111); and then stripping is carried out. By means of the method, the wafer with the complete (111) face can be obtained through cutting in the ultra-thick (001) CVD monocrystal diamond.

The invention discloses a method for obtaining a crystal face (111) in a (001) CVD (Chemical Vapor Deposition) monocrystal diamond, which comprises the following steps of: fixing the monocrystal diamond, enabling femtosecond laser to be vertical to the crystal face (001) of the monocrystal diamond, and scanning by taking the crystal orientation of a diagonal line [110] of the crystal face as a preset path, so that a graphitized modified line is formed in the monocrystal diamond; forming a leap crack along a crystal face (111); pulling force is applied to the single-crystal diamond, so that the single-crystal diamond is separated in the crack direction, and a diamond stripping block is obtained; and cleaning the stripping surface of the diamond stripping block to obtain the crystal face (111) of the monocrystal diamond. As the crystal face (111) is an easy-cleavage face, striding cracks along the crystal face (111) can be formed in the diamond. The crystal face (111) of the single crystal diamond can be obtained in a short time, cold ablation processing of the interior of a material can be achieved in an ultra-short time, and the method has the advantages of being high in efficiency, low in loss, low in cost, capable of simplifying polishing and the like.

The invention relates to a single crystal diamond and a preparation method and application thereof. The preparation method comprises the following steps: performing etching treatment on a diamond seed crystal; then introducing a carbon source, hydrogen and chlorine, and carrying out deposition growth of the monocrystal diamond; after deposition growth is finished, post-treatment is conducted, and the single crystal diamond is obtained. Chlorine and hydrogen are introduced in the chemical vapor deposition process at the same time, selective growth of a diamond phase can be promoted, chlorine can help to reduce formation of non-diamond carbon (such as graphite), and therefore the quality and the growth speed of diamond single crystals are improved, and the dislocation density is reduced.

The substrate for diamond growth comprises a splicing unit group, the splicing unit group comprises a first single crystal diamond and a second single crystal diamond, and in the splicing state, a first front face and a second front face are spliced to form a growth surface with a small splicing seam. The diamond splicing growth method comprises the following steps: S1, selecting the first single crystal diamond as a substrate to grow an epitaxial layer; s2, separating the epitaxial layer in the step S1 from the first substrate to obtain a second single crystal diamond; the method is characterized by further comprising the steps that S3, the first single crystal diamond and the second single crystal diamond are cut; s4, splicing the first front surface of the first single crystal diamond and the second front surface of the second single crystal diamond obtained in the step S3, and inversely arranging to obtain a spliced unit group; and S5, cutting and separating after growth to obtain the large-size monocrystal diamond. The method has the advantages that the quality of splicing seams of the obtained large-size diamonds is good, and the splicing method of the splicing unit group is simple.

According to the crystal expansion method of the large-area single crystal diamond, iterative growth of the single crystal diamond substrate is carried out by continuously replacing the molybdenum table with a larger groove area in the middle, so that the large-area single crystal diamond substrate suitable for being used in the semiconductor field is obtained, and the single crystal diamond substrate can be continuously expanded after each time of growth is completed. According to the method, slice cutting is carried out along a transverse maximum expansion crystal face, transverse growing single crystal diamonds are reserved as much as possible, material waste is reduced, and the cutting mode is adopted in each iteration, so that large-area single crystal diamond growth can be realized more quickly, the growth efficiency is improved, the number of iterations is reduced, material waste is reduced, and the production cost is reduced. The production cost is reduced. The growth of the large-area single crystal diamond can be realized in a multi-round growth and processing mode.

The invention relates to the technical field of diamond processing, in particular to a diamond laser slicing method and device. The invention relates to a diamond laser slicing method. The method comprises the following steps: 1) utilizing a laser beam from 1t; 100 gt; the surface vertically enters the interior of the single crystal diamond, and a C-C bond is fractured by forming instant local high temperature so as to be carbonized to form graphite; (2) the laser beam is at the distance lt; 100 gt; the surface is at a certain depth and is scanned along the crystal orientation direction of # imgabs0 # or # imgabs1 #, and by controlling the position of a laser focal plane and the energy of the position, only modification points and a graphite layer are formed, or modification points are formed along lt; 111gt, 111gt; the surface-expanded cracks further form a crack expansion layer, and stress difference is generated between the crack expansion layer and the non-modified layer, so that the diamond layer is convenient to peel off. According to the method, arrangement and / or crack propagation of modified points can be accurately controlled, and stress distribution of a modified layer is optimized, so that high-precision diamond slicing is realized, and fragmentation and damage of a sample are avoided.

The invention relates to a method for laser separation of diamond single crystals, and relates to the technical field of diamond cutting, a modified layer is formed on a single crystal diamond through picosecond laser, and then the single crystal diamond is separated along the modified layer through a splitting machine. The method has the advantages that the efficiency is high, the product is not easy to break, the section has no taper, and the upper surface and the lower surface have no ablation marks.

The invention provides an extremely-hard high-toughness nano polycrystalline diamond composite material and a preparation method thereof. Belongs to the field of preparation of high-toughness extremely-hard materials, and is characterized in that the extremely-hard and high-toughness nano polycrystalline diamond composite material is composed of 70-90% by mole of cubic phase diamond and 10-30% by mole of cubic carbon. The preparation method of the extremely-hard high-toughness nano polycrystalline diamond composite material specifically comprises the following steps: by taking graphene as a raw material, pre-pressing the graphene into a cylinder in a mold, and carrying out high-temperature and high-pressure synthesis reaction on a pre-pressed sample, so as to obtain the extremely-hard high-toughness nano polycrystalline diamond composite material. And after the high-temperature and high-pressure synthesis reaction, cooling and pressure relief are performed to obtain the extremely-hard and high-toughness nano polycrystalline diamond composite material. Compared with the prior art, the extremely-hard high-toughness nano polycrystalline diamond composite material has two phases of cubic diamond and cubic carbon, and compared with single crystal diamond, the toughness is improved by 1-2 times under the condition that the hardness is kept.

The invention discloses an intelligent cutter system with a multi-signal sensing function and a manufacturing method of the intelligent cutter system, and relates to the field of intelligent cutting tools for ultra-precision machining. The method comprises the steps that boron ions and sulfur ions are doped in a multi-layer gradient doping mode through a multi-step ion implantation method in a front tool nose area and a front tool face area of the single crystal diamond tool, so that the single crystal diamond tool has the conductivity of a semiconductor; the multi-layer gradient doping mode comprises shallow-layer doping, middle-layer doping and deep-layer doping, and the concentration and depth distribution of boron ions and sulfur ions can be controlled by the multi-layer gradient doping mode, so that the concentration of a tool nose area is the highest; the single crystal diamond cutter with the conduction characteristic of a semiconductor is connected with a signal processing and transmission circuit through a platinum electrode, so that the intelligent cutter capable of sensing force, temperature and vibration at the same time and monitoring the cutting state and the cutter abrasion state in real time is obtained. By means of the scheme, the cutting force, the cutting heat degree and the vibration signals in the cutting process can be accurately detected at the same time.

The invention discloses a method, a system and a terminal for prolonging single growth time of single crystal diamond, and the method comprises the following steps: obtaining diamond seed crystals, putting the diamond seed crystals into a reaction cavity of MPCVD equipment, and carrying out vacuumizing treatment and glow starting treatment on the reaction cavity to obtain a first growth reaction environment of the diamond seed crystals; acquiring preset process gas, and inputting the preset process gas into the first growth reaction environment in a segmented manner according to preset concentration to obtain a second growth reaction environment; and according to the second growth reaction environment, carrying out staged heating treatment and seed crystal single growth treatment to obtain a target single crystal diamond after the single growth of the diamond seed crystal is finished. According to the method, the concentration proportion of various process gases in the reaction cavity is slowly increased according to different time periods, so that the growth reaction environment of the diamond seed crystals is controlled, the growth time of the monocrystal diamond can be effectively prolonged, and the cultivation quality of the monocrystal diamond is improved.

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

The present application belongs to the field of diamond preparation, and discloses a high-quality single-crystal diamond preparation method for removing polycrystal defects. Through screen printing and plasma-assisted etching, the (100) surface around the black point-shaped polycrystal is directionally etched by cerium oxide, and a square groove is etched. Then, the slurry of iron oxide or nickel oxide is printed by screen printing, the black point-shaped polycrystal is covered with the slurry, and the black point-shaped polycrystal is removed by plasma-assisted etching. Then, the etched groove is filled by a horizontal growth process, so that the growth defects can be removed, and high-quality single-crystal diamond can be obtained. The present application can greatly reduce the waste rate of single-crystal diamond products and improve the utilization rate of single-crystal diamond. The present application is beneficial to saving production cost and improving efficiency.

The present invention belongs to the technical field of ultra-precision cutting, and specifically relates to a diamond tool device. It includes: a diamond tool, a tool holder, wherein the diamond tool has: an electrode; a boron-doped single crystal diamond layer, whose resistance changes with the temperature after being heated, and is used to sense the temperature of the cutting micro-area; and a single crystal diamond layer, which is bonded to the boron-doped single crystal diamond layer through atomic interaction; the tool holder has: a body, which is internally provided with a temperature acquisition circuit board and a power supply, an upper cover plate, and is provided with a constant current source shift button electrically connected to the temperature acquisition circuit board; the electrode is connected to the temperature acquisition circuit board through a wire, and the cutting edge of the diamond tool is arranged on the single crystal diamond layer. Since the present invention has a boron-doped single crystal diamond layer, its resistance changes with the temperature after being heated, so that the temperature of the cutting micro-area can be sensed during the working process, and can be used for online measurement of the cutting area temperature during the single-point diamond turning process.

The invention discloses a single crystal diamond, a preparation method thereof and a chip, and relates to the technical field of semiconductors, and the preparation method of the single crystal diamond comprises the following steps: cutting a splicing side surface of a first diamond substrate and a splicing side surface of a second diamond substrate, the splicing side face of the first diamond substrate and the splicing side face of the second diamond substrate are both in a sawtooth shape. And splicing the sawtooth-shaped splicing side surface of the first diamond substrate with the sawtooth-shaped splicing side surface of the second diamond substrate to form the diamond substrate. An epitaxial layer is formed on the diamond substrate. The invention aims to realize seamless splicing of single crystal diamonds on splicing side surfaces of a crystal face (110). The single crystal diamond can be used as a substrate of a semiconductor device.

The invention discloses a rare earth polishing solution for chemical mechanical polishing of monocrystal diamond as well as a preparation method and application of the rare earth polishing solution. The rare earth polishing solution comprises a rare earth abrasive, a solvent, a dispersing agent and an oxidizing agent, in the rare earth polishing solution, the mass concentration of the rare earth abrasive is 0.1%-1%, the percentage concentration of the dispersing agent is 1%-2%, the molar concentration of the oxidizing agent is 0.5-1 mol / L, and the solvent is deionized water. The preparation process method is simple, and the product has excellent polishing performance.

The invention provides a preparation method of a diamond CMOS (Complementary Metal-Oxide-Semiconductor Transistor) phase inverter and the phase inverter, and relates to the technical field of ultra-wide forbidden band semiconductor field effect transistor devices. Comprising the following steps: introducing a boron element and a nitrogen element into a microwave plasma chemical vapor deposition chamber through a gaseous source or a solid source so as to grow an n-type diamond epitaxy on a diamond substrate layer; hydrogen plasma is used for processing the diamond substrate with the deposited metal mask, so that a p-type active region is prepared on the second n-type diamond epitaxy, and the first n-type diamond epitaxy becomes an n-type active region; and preparing a source electrode, a drain electrode, an NMOS (N-channel Metal Oxide Semiconductor) field effect transistor gate dielectric layer, a PMOS (P-channel Metal Oxide Semiconductor) field effect transistor gate dielectric layer and a gate electrode on the p-type active region and the n-type active region. Therefore, a hydrogen terminal diamond preparation process and a diamond boron-nitrogen co-doping process are used, and a p-type active region and an n-type active region are simultaneously formed on the surface of the single-chip single crystal diamond, so that the preparation of the CMOS phase inverter is realized on the single-chip diamond.

The invention discloses a preparation method of a large-thickness (111) crystal orientation monocrystal diamond for a semiconductor, and aims to solve the problems of low growth rate and poor growth quality of the (111) crystal orientation diamond. The preparation method of the monocrystal diamond comprises the following steps: S1, heating and soaking a seed wafer in mixed acid; s2, performing etching treatment on the seed wafer by using hydrogen plasma; s3, oxygen is introduced into the vacuum cavity; s4, methane continues to be introduced into the vacuum cavity, the volume concentration of methane, hydrogen and oxygen is controlled, and microwave plasma chemical vapor deposition growth is carried out; s5, controlling the growth time; and S6, polycrystals on the surface of the blank are cut off. According to the method, the MPCVD process is adopted, and parameters such as gas concentration, temperature, pressure intensity and microwave energy in the growth process are controlled, so that homoepitaxial growth of the high-quality single crystal (111) crystal orientation diamond is realized, the production cost of the (111) crystal orientation diamond is reduced, and the realization of mass production of the (111) crystal orientation single crystal diamond is facilitated.

The invention discloses a method for prolonging the batch production and growth time of monocrystal diamonds, and belongs to the technical field of diamond preparation. The method comprises the steps that seed crystals are placed in a substrate table and grow in a working cavity, the substrate table is provided with a concave part, the concave part is provided with a groove, the seed crystals are placed in the groove, a single crystal growth face is made to be lower than the upper surface of the substrate table by 0.6 mm or above, and the distance between every two adjacent seed crystals is larger than or equal to 1 mm; the single crystal growth comprises first-stage single crystal growth and second-stage single crystal growth, the first stage and the second stage comprise gas introduction and gas flow adjustment, and the gas introduced in the first stage comprises hydrogen and methane; gas introduced in the second stage comprises hydrogen, methane, oxygen and nitrogen; the volume concentration of the methane introduced in the first stage is smaller than that of the methane introduced in the second stage; the temperature of the first stage is lower than that of the second stage. The method can prolong the time length of batch production and single growth of the single crystal diamond and ensure the quality of the diamond.

The invention discloses a method for preparing single crystal diamond based on a carbon dioxide / methane mixed gas carbon source, which adopts a microwave plasma chemical vapor deposition method and takes CH4 / CO2 mixed gas as the carbon source to prepare the high-quality single crystal diamond, and obviously improves the growth rate of the single crystal diamond. The method solves the problems that the existing carbon dioxide methanation conversion rate is not high, and the carbon dioxide / methane mixed gas output after conversion cannot be directly converted into the high-value single crystal diamond, and the method has important significance for converting the carbon dioxide into the diamond.

The invention relates to a CVD monocrystalline diamond growth temperature field stability improving method and a stabilizing device thereof.A through hole is formed in a sunken groove of a molybdenum table, after a monocrystalline diamond substrate in the sunken groove is tightly attached to the molybdenum table, nickel-based paste brazing filler metal is injected into the through hole, vacuum heating and welding are conducted, and the stability of a CVD monocrystalline diamond growth temperature field is improved. The substrate is pulled to be in close contact with the bottom face of the concave groove of the molybdenum table through the brazing filler metal which is welded and solidified, no gap is reserved, the heat conduction uniformity between the substrate and the concave groove is improved, the problem of local concentration of heat and temperature is avoided, the temperature field distribution consistency of the substrate and the upper surface of the molybdenum table is better, growth of all parts of the substrate is more uniform, and the service life of the substrate is prolonged. And the grown monocrystal diamond has fewer edge polycrystals, the morphology of the monocrystal diamond is regular, the internal stress is greatly reduced, and the application of the product in various industries and fields is facilitated.

The invention discloses a method for enhancing CVD diamond heteroepitaxial nucleation through pulse positive bias, and belongs to the technical field of CVD method heteroepitaxial single crystal diamond. Firstly, a molybdenum support bearing a sample is placed on a water cooling table in the center of a CVD cavity, the positive electrode of a direct-current pulse power supply is connected to an antenna of CVD equipment through a wire, and the other electrode of the direct-current pulse power supply is connected to a shell of the CVD cavity through a wire and is grounded; then placing a heterogeneous substrate for epitaxy in the center of the molybdenum support, and vacuumizing; introducing hydrogen, turning on a microwave power supply, gradually increasing power and adjusting air pressure; and methane is introduced, a pulsed bias power supply is turned on, and enhanced nucleation is carried out. According to the invention, the direct-current pulse power supply is used for bombarding the surface of the matrix in a discontinuous pulse mode, so that the thermal balance compensation effect is achieved; meanwhile, pulse positive bias voltage is applied to the base body, the effect of high-density epitaxial nucleation on the insulating heterogeneous substrate is achieved, and the method has important significance on heteroepitaxial growth and application of large-size single crystal diamond.

The invention relates to the technical field of solar-blind ultraviolet detector materials, and particularly discloses a diamond / gallium oxide heterojunction and application of the diamond / gallium oxide heterojunction to a solar-blind ultraviolet detector, and the diamond / gallium oxide heterojunction comprises a single crystal diamond layer and a Zr-doped epsilon-Ga2O3 layer located on the single crystal diamond layer; the single crystal diamond layer is made of (100) oriented single crystal diamond, and the surface roughness RMS of the single crystal diamond is 2-6 nm; the Zr-doped epsilon-Ga2O3 layer is Zr-doped epsilon-Ga2O3 which is grown on the surface of the monocrystal diamond in a heteroepitaxial manner by adopting a pulse laser deposition method; zr-doped epsilon-Ga2O3 grows on the surface of the monocrystal diamond along the (001) direction; and the Zr doped epsilon-Ga2O3 is of a columnar crystal structure. The heterojunction provided by the invention realizes excellent photoelectric detection performance, solves the problem of poor selectivity of a traditional solar blind ultraviolet detector, and has wide application value.

The invention belongs to the technical field of data processing, and discloses a dislocation density detection method and system of a single crystal diamond, a terminal and a storage medium, the method comprises the following steps: obtaining a single crystal diamond sample, and carrying out grinding and polishing treatment on the single crystal diamond sample to obtain an initial single crystal diamond sample; cleaning the initial single crystal diamond sample to obtain a target single crystal diamond sample; carrying out dislocation density detection treatment on the target single crystal diamond sample to obtain an initial dislocation density detection result, and constructing a target dislocation density measurement model according to the initial dislocation density detection result; and acquiring surface parameter data of the current monocrystal diamond to be detected, inputting the surface parameter data into the target dislocation density measurement model, and outputting a target dislocation density detection result. According to the method, the surface parameters of the single crystal diamond are controlled, and the dislocation density measurement model is established, so that the detection efficiency and accuracy of the dislocation density detection of the single crystal diamond can be effectively improved.

The invention discloses a design method for crystal face layout and grinding direction of a diamond biological slicing cutter, and relates to the technical field of ultra-precision machining. The method comprises the following steps of: representing the geometric shape of a cutter by adopting a surface patch, respectively taking three crystal orientations (100), (010) and (001) of a monocrystal diamond crystal as an x axis, a y axis and a z axis, and describing a geometric model of the cutter by giving spatial positions of important nodes; setting a characteristic space, and considering deflection angles of a cutter relative to three crystal orientations of the single crystal diamond and grinding angles on front and rear cutting surfaces; setting three optimization targets of machining efficiency, blade use strength and blade straightness; and executing a genetic algorithm to iteratively output a feasible cutter sharpening scheme. A feasible crystal face layout and a grinding direction are tested based on an NSGA-II multi-target genetic algorithm, a surface patch is adopted to represent the geometrical shape of a tool, three optimization targets of machining efficiency, cutting edge strength and cutting edge straightness are comprehensively considered, and an optimal layout scheme is obtained through screening iteration.

The invention discloses a method for precisely cutting pure iron by using a diamond coated cutter. The method comprises the following steps: (1) preparing the diamond coated cutter; the preparation method comprises the following steps: adding a single crystal diamond cutter into a perfluoropolyether solution, heating in a water bath for 1-2 hours at the temperature of 50-65 DEG C, heating the single crystal diamond cutter for 1-2 hours at the temperature of 100-400 DEG C, and cleaning to obtain a diamond coated cutter plated with a perfluoropolyether coating; and (2) carrying out precise cutting processing on the pure iron by adopting a diamond coating cutter under the lubrication of cutting fluid. According to the perfluoropolyether coating diamond cutter, the surface energy of the diamond cutter can be effectively reduced, the friction effect between cutters and chips is reduced, and flowing and discharging of the chips on the front cutter face are promoted. And the perfluoropolyether coating can establish a protective barrier, effectively isolate cutter-scrap interface contact, inhibit catalytic reaction of pure iron to the diamond cutter, prevent graphitization abrasion of the diamond cutter and prolong the service life of the cutter.

A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.

A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.

A method of manufacturing CVD single crystal diamond material using a chemical vapour deposition process. A first single crystal diamond material is provided having a largest linear dimension of at least 50 mm and a surface dislocation density of at least 107 cm-2. A first buffer layer is disposed on a surface of the first single crystal diamond material, the buffer layer configured to limit the propagation of dislocations. Diamond material is homoepitaxially grown on the first buffer layer on the first single crystal diamond material. A further buffer layer is disposed on a surface of the homoepitaxially grown diamond material, the further buffer layer configured to limit the propagation of dislocations. Further diamond material is homoepitaxially grown on the further buffer layer. The final two steps are repeated until the homoepitaxially grown diamond material has a surface dislocation density of less than 105 cm-2.

The invention relates to the technical field of diamond color center quantum light sources, in particular to a method for preparing a diamond color center in a positioning mode, and the method comprises the following steps that a single-face polished sapphire sheet serves as a substrate, and a microwave plasma chemical vapor deposition method is adopted for preparing a single crystal diamond with a (001) surface; preparing a metal layer on the surface of the monocrystal diamond by adopting a physical vapor deposition method, and dehumidifying and self-assembling to form balls; etching the surface of the monocrystal diamond (001) at a high temperature in a hydrogen atmosphere to form a conical pit structure with a different surface; and selectively growing a diamond color center in the cone pit by adopting a chemical vapor deposition method. Aiming at the problems that the existing ion implantation technology for positioning and preparing the diamond color center is difficult to realize nanoscale accurate control and high in cost, a foundation is laid for the integration and low-cost preparation of the high-purity and high-brightness diamond single photon source.

The invention discloses a manufacturing method of a grinding wheel for a high-uniformity and easy-to-sharpen grinding single crystal diamond cutter, and belongs to the field of superhard materials and products in machining, the manufacturing method mainly comprises the steps of wet mixing, tape casting, laser cutting, lamination, matrix surface treatment, integrated sintering, size processing, sharpening and the like, and finally the grinding wheel with the total thickness of an abrasive layer being 7-15 mm is formed. The grinding wheel layer is formed by intersecting and laminating a piece a and a piece b, the height of diamonds at the junction of the piece a and the piece b tends to be consistent, the diamond exposure height and smoothness are better compared with direct feeding sintering, meanwhile, the piece a can be designed to be of a porous structure through proper binder selection, and therefore the dressing efficiency is further improved, and the dressing effect is better. And higher processing quality and efficiency of the diamond cutter are indirectly improved.