824 results about "Chemical vapors" patented technology

This invention relates to hafnium halide compositions having a zirconium concentration of less than about 1000 parts per million, a process for producing the hafnium halide compositions having a zirconium concentration of less than about 1000 parts per million, organometallic compound precursors, a process for producing the organometallic compound precursors, and a method for producing a film or coating from the organometallic compound precursors. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is called chemical-vapor deposition (CVD.) Conventional CVD systems not only form layers that have non-uniform thickness, but also have large chambers that make the CVD process wasteful and slow. Accordingly, the inventor devised new CVD systems, methods, and apparatuses. One exemplary CVD system includes an outer chamber, a substrate holder, and a unique gas-distribution fixture. The fixture includes a gas-distribution surface having holes for dispensing a gas and a gas-confinement member that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which not only facilitates depositions of more uniform thickness, but also saves gas and speeds up the deposition process.

The invention relates to a carbon fiber reinforced boron carbide composite material and a preparation method thereof. The preparation method comprises the following steps of: preparing a carbon fiber preform by adopting a needling, puncturing or three-dimensional weaving process; and depositing boron carbide matrix in the porous carbon fiber preform by osmosis to form the compact carbon fiber reinforced boron carbide composite material. Aiming at a certain specific application environment, a boron carbide coat can be deposited on the surface of a sample by adopting the same chemical vapor osmosis process. The carbon fiber reinforced boron carbide-based composite material manufactured by the method has the characteristics of good mechanical property, toughness superior to that of the traditional sintered boron carbide, compact structure, light weight, abrasion resistance and high hardness, and is suitable to be applied to a high-temperature light structural component.

The surface of a phosphor is coated with a coating member made of a material different from the phosphor in chemical vapor-phase reaction. The coating member is made of any of metal oxide, metal nitride and metal oxynitride. The coating member coats the surface of the phosphor whereby having a substantially smooth film, or is formed such that a large number of fine particles relatively smaller than the phosphor aggregate to coat the whole surface of the phosphor. The coating member contains at least one metallic element selected from the group consisting of Al, Si, and rare earth elements. In addition, the phosphor is a transparent water-soluble phosphor and is an alkaline-earth silicon-nitride phosphor, an alkaline-earth silicon oxynitride phosphor, or the like. The BET value of the coated phosphor is 1.0 to 10 times the BET value before coating. The average thickness of the coating is 10 nm to 500 nm.

The invention provides a method to form a pattern of functional material on a substrate. The method uses an elastomeric stamp having a relief structure with a raised surface and having a modulus of elasticity of at least 10 MegaPascal. At least the raised surface of the stamp is treated by exposing the stamp to heat, radiation, electrons, a stream of charged gas, chemical fluids, chemical vapors, and combinations thereof, to enhance wettability of the surface. A composition of the functional material and a liquid is applied to the relief structure and the liquid is removed to form a film on the raised surface. The elastomeric stamp transfers the functional material from the raised surface to the substrate to form a pattern of the functional material on the substrate. The method is suitable for the fabrication of microcircuitry for electronic devices and components.

The method of improving the optical properties of single crystal CVD diamond which comprises annealing the crystals at a temperature of up to 2200° C. and a pressure below 300 torr.

The invention provides a light guide structure, a backlight module and a manufacturing method thereof. The light guide structure includes a light guide plate, an optical converting element and an optical vapor barrier. The light guide plate is provided with a light receiving face. The chemical vapor barrier covers the light receiving face. The optical converting element is arranged on the light receiving face and between the light guide plate and the optical vapor barrier. The invention utilizes the optical vapor barrier to separate optical converting element and the external world, thereby preventing the optical converting element from being affected with damp. Thus, the reduction of the optical converting efficiency is decelerated.

Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

The invention discloses a preparation method of three-dimensional graphene or a composite system thereof. The preparation method comprises the steps of: by taking a transition metal elementary substance and/or a compound containing a transition metal element as raw materials, preparing a three-dimensional porous metal catalyst template through high-temperature reduction; growing the three-dimensional graphene by utilizing a chemical vapor phase deposition method to obtain the three-dimensional graphene with a catalyst framework; furthermore, etching the three-dimensional graphene with the catalyst framework to obtain three-dimensional graphene powder; and furthermore, compositing the three-dimensional graphene powder with metal, a macromolecular material, a biomolecular material and the like to form a composite material system. The preparation method is simple in technique, capable of fast and massively preparing high-quality and high-density three-dimensional graphene or composite material thereof, and has wide application prospects on the aspects of water treatment, biomedicines, energy generation and conversion and energy accumulation devices, static resistance, thermal management, heat conduction and dissipation, sensors, electromagnetic shielding, wave absorption, catalysis and the like.

Novel spectrometer arrangements are described. They may employ a resin-based preconcentration system to sample chemical vapors. A field-widened interferometer modulates radiant energy. The signal generated by the interaction of the radiant energy with the sample is detected and processed by a computer. A variety of enhancements to the basic design are described, providing a family of related spectrometer designs. These spectrometers have applications in spectrometry, spectral imaging and metrology.

Biased plasma etch processes incorporating H₂ etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

Vapor phase methods for synthesizing metal nanowires directly without the help of templates. A vapor phase method in which nucleation and growth of metal oxides at temperatures higher than the oxide decomposition temperatures lead to the respective metal nanowires. The chemical vapor transport of tungsten in the presence of oxygen onto substrates kept at temperatures higher than the tungsten oxide decomposition temperature (˜1450° C.) led to nucleation and growth of pure metallic tungsten nanowires. In a similar procedure, tungsten oxide nanowires were synthesized by maintaining the substrates at a temperature lower than the decomposition temperature of tungsten oxide. The vapor transport of low-melting metal oxides provides a procedure for synthesizing metal and metal oxide nanowires.

This invention relates to organometallic compounds comprising at least one metal or metalloid and at least one substituted anionic 6 electron donor ligand having sufficient substitution (i) to impart decreased carbon concentration in a film or coating produced by decomposing said compound, (ii) to impart decreased resistivity in a film or coating produced by decomposing said compound, or (iii) to impart increased crystallinity in a film or coating produced by decomposing said compound. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

A stress nitride structure is formed on an integrated circuit field effect transistor by high density plasma (HDP) depositing a first stress nitride layer on the integrated circuit field effect transistor and then plasma enhanced chemical vapor depositing (PECVD) a second stress nitride layer on the first stress nitride layer. The first stress nitride layer is non-conformial and the second stress nitride layer is conformal. Related structures also are described.