15 results about "Organic field-effect transistor" patented technology

The application discloses a method for P-type doping of an organic field effect transistor semiconductor layer and an organic field effect transistor prepared by the method. 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (F4-TCNQ) is dissolved in an orthogonal solvent of the organic semiconductor layer as a P-type dopant, and the P-type dopant is spin-coated on an organic semiconductor layer film which has been spin-coated in an air atmosphere, and the doping is activated by rapid thermal annealing, so that the problems caused by hopping transmission and Coulomb traps in charge transport are improved, the threshold voltage is reduced, and the on-off ratio is improved. For a P-type field effect transistor, the P-type doping enhances hole transport, effectively improves the saturation current, and suppresses electron transport, so that the power consumption is reduced when the transistor is turned off. The doping method is based on a solution method and is simple in process and low in preparation cost, can be applied to large-scale production, and has a good application prospect in flexible and portable electronic devices.

The application discloses a kind of copolymer organic semiconductor devices based on isolation and interconnection and preparation method, including substrate, photoetching blocking layer, insulating isolation layer, N organic field effect transistor and N-1 interconnection line;Photoetching blocking layer includes isolation layer and inorganic dielectric layer;Isolation layer is opened with N longitudinal through isolation groove along length direction;Inorganic dielectric layer includes lower dielectric layer and upper dielectric layer;Lower dielectric layer is located in N isolation, and upper dielectric layer is laid on the top of isolation layer and lower dielectric layer;Each organic field effect transistor includes semiconductor layer, source, drain and gate;Semiconductor layer is laid in the isolation groove at the bottom of corresponding lower dielectric layer section, and its material is organic copolymer.The application effectively utilizes isolation groove and photoetching blocking layer, and the semiconductor layer of different semiconductor materials is wrapped and isolated, so as to realize the integration of different organic field effect transistors on the same substrate, and the organic field effect transistor can realize effective interconnection.

This invention provides a method for fabricating an organic field-effect transistor (OFET) based on dry transfer of a single-crystal film. The method includes the following steps: depositing an organic semiconductor layer and a dielectric layer sequentially from bottom to top on a first substrate; forming source and drain electrodes on a second substrate; peeling off the composite organic semiconductor layer and dielectric layer from the first substrate and transferring them to cover the second substrate where the source and drain electrodes are formed, such that the source and drain electrodes on the second substrate are in contact with the organic semiconductor layer to form a carrier channel structure; and forming a gate electrode on the dielectric layer after film transfer to obtain the organic field-effect transistor. The organic field-effect transistor fabricated using the technical solution of this application exhibits extremely low contact resistance and high intrinsic mobility, thereby fully utilizing the intrinsic transport performance of organic semiconductors and showing significant advantages in improving the performance of OFET devices.

The application provides a directional rubbing device, a method for constructing a nanochannel, a method for directional growth of a nanowire array, and the nanowire array and application. The directional rubbing device can quickly form a nanoscale channel array with a certain orientation on an amorphous substrate, the area of the constructed channel array is controllable, and the width, density and depth of the channel can be controlled by adjusting the mesh number of the sandpaper and the number of the pressing blocks of the rubbing device; then the amorphous substrate is subjected to hydrophobic modification, and a MPc nanowire array with good distribution uniformity, good orientation and good stability can be grown on the substrate with the directional rubbing nanochannel array by using a PVD method; and the obtained nanowire array can be applied to an organic field effect transistor and a photodetector product.

The application discloses a bipolar polymer semiconductor material containing difluoro-substituted indathrene and a preparation method and application thereof. N The copolymerization of the obtained copolymer monomer and 5,5'- (bistrimethyltinyl) -2,2'-dithiophene or (E) -1,2- (5- (bistrimethyltinyl) -thiophene-2-yl) ethylene, a centrosymmetric monomer, through a bromination reaction of bromo-succinimide to obtain a novel bipolar polymer semiconductor material containing difluoro-substituted indathrene with a D-A configuration. The synthesis route of the application is simple and efficient, raw materials are easy to obtain, the cost is low, the universality is high, and the repeatability is good. The material has the advantages of good solubility, excellent thermal stability and strong absorption spectrum range. The bipolar polymer semiconductor material prepared by the application is used as an active layer material, and an organic field effect transistor device prepared by the application has excellent electrical performance. The material has broad commercial prospects in organic thermoelectricity, organic field effect transistors, organic logic complementary circuits and other optoelectronic devices.

The application discloses a device and method for cutting fluoranthene crystal by using a photo-induced electric field of lithium niobate. The method uses a spatial electric field generated by laser irradiation of iron-doped lithium niobate to realize cutting of micron-size fluoranthene crystal under heating conditions. The whole device is simple to build, and realizes real-time control of the crystal cutting position and residual length. The technology can be applied to various applications of organic field effect transistors and other organic optoelectronics, and has important significance for processing and modification of organic crystals.

Provided herein are naphthalene diimide (NDI) compounds and their use in thin films, methods of making thin films, photovoltaic devices comprising NDI thin films, and methods of making photovoltaic devices comprising NDI thin films. Additionally contemplated are organic light-emitting diodes comprising NDI thin films, photodetectors comprising NDI thin films, and organic field-effect transistors (OFETs) comprising NDI thin films.

This invention belongs to the field of organic electronic device technology and discloses a planar gate structure longitudinal copolymer organic field-effect transistor and its fabrication method. The longitudinal copolymer organic field-effect transistor structure sequentially includes a substrate, a drain, an organic semiconductor layer, a source, an organic dielectric layer, and a gate, wherein the gate is located on the top layer, the drain is located on the bottom layer, and the source is located on the middle layer. The drain forms a fully covered planar electrode above the substrate. The source and gate are composed of multiple parallel, equally spaced strip electrodes in an interdigitated distribution. The channel length between the source and drain is the thickness of the organic semiconductor layer, which is determined by the concentration of the organic solution and the spin coating speed, and the channel length is 40nm~300nm. Because the gate adopts a planar gate structure, this invention eliminates the need for high-precision etching and photolithography processes, reducing the fabrication difficulty of the longitudinal copolymer organic field-effect transistor.

The application discloses a kind of based on fluorenyl small molecule molecular field effect transistor memory and preparation method thereof, belong to information storage technical field.The charge capture layer of the memory is made into single film by the way of solution processing after being made by fluorenyl small molecule material 3Ph-TrH, and the spiro structure of small molecule material 3Ph-TrH effectively increases steric hindrance, inhibits the effect of charge leakage, with excellent hole trapping capacity and electron trapping capacity, so that memory device shows bipolar storage (42.8V), high stability, good resistance and other excellent performance, the mobility of the single-molecule thin film device reaches 0.35cm 2 V ‑1 s ‑1 , switch ratio exceeds 10 5 , higher maintenance performance;In addition, the preparation process of the memory device is simple, can greatly reduce production cost, is conducive to the popularization and application of this kind of device.

The application discloses a method for rapidly evaporating electrodes and application of the method in photoelectric devices. The preparation method of the photoelectric device comprises the following steps: using a solution method, sequentially preparing a first interface layer, a functional material layer and a second interface layer on a substrate, and then rapidly evaporating and depositing a counter electrode on the second interface layer; the photoelectric device is a reverse structure; and the spin coating preparation of the second interface layer is completed in 0.5-1 min. The method is suitable for the preparation of reverse, rapidly evaporated photoelectric devices such as organic solar cells, perovskite solar cells, quantum dot cells, organic electroluminescent displays and organic field effect transistors, and is suitable for large-scale production and preparation of applications in clothes, vehicle windows, wall surfaces, windows and electronic products.

This invention proposes an organic field-effect transistor (OFET) biosensor based on interface topology engineering, its fabrication method, and its application, belonging to the field of biosensor technology. The OFET biosensor comprises a substrate, electrodes, an organic semiconductor layer, an interface topology modification layer, and a biorecognition probe. Through a kinetically controlled vacuum deposition process, an interface topology modification layer with a nanoscale uniform rough morphology is constructed on the semiconductor surface. This topology induces double-layer overlap at the solid-liquid interface, significantly reducing interface capacitance and physically stretching the effective Debye length, thereby overcoming the Debye shielding effect in the high ionic strength environment of physiological fluids. Simultaneously, the aldehyde groups on the surface of the modification layer achieve covalent fixation of the probe without connecting arms and provide encapsulation protection. This sensor achieves ultrasensitive detection of allergen-specific IgE and exhibits excellent stability and signal-to-noise ratio in undiluted human serum, providing a universal physical sensitization strategy for the point-of-care testing of complex clinical samples.

The application discloses a low-voltage and low-leakage organic field effect transistor array and a preparation method and application thereof, and belongs to the technical field of organic electronics. The low-voltage and low-leakage organic field effect transistor array cooperatively suppresses leakage current in two directions of vertical and horizontal directions. A high-k-low-k double-layer composite dielectric layer is constructed, wherein the high-k dielectric layer realizes low-voltage gate control, and the low-k dielectric layer serves as a tunneling barrier to suppress vertical gate leakage; meanwhile, a patterned photoetching semiconductor layer is constructed, so that a semiconductor region is located inside a channel, and a horizontal parasitic leakage path is cut off.

The application discloses a kind of interpenetrating structure copolymer organic inverters and preparation method, including substrate, 2 organic field effect transistors, power supply end, ground terminal, output terminal, input terminal and interconnection line;Each organic field effect transistor includes organic semiconductor layer, photoetching dielectric barrier layer, source, drain and gate;Source includes n source fingers;Drain includes n drain fingers, n drain fingers and n source fingers equidistantly staggered, and form 2n-1 source-drain gap;Gate includes 2n-1 gate fingers arranged directly above source-drain gap.The application can effectively utilize photoetching dielectric barrier layer, introduce photoetching into the preparation of organic circuit, can effectively protect organic semiconductor material, and can be integrated on the same substrate Multiple organic field effect transistors are realized.In addition, interpenetrating structure can improve the on-current of circuit and reduce on-resistance, while the circuit opening voltage can be well reduced, and the power consumption of circuit is reduced.

The application belongs to the field of organic semiconductor polymer photoelectric materials, and solves the problem that most conjugated polymers are difficult to simultaneously realize high carrier mobility and strong light emitting performance through molecular design. The pyrrolopyrrolopyridine polymer based on quinoline side groups provided by the application can be used as channel material of organic field effect transistor (OFET), light emitting layer of organic light emitting diode (OLED) and active layer material of organic light emitting transistor (OLET), and has a structure as shown in Figure 1. The QDPP compound provided by the application has good thermal stability, balanced bipolar transmission characteristics and high photoluminescence quantum yield.