62 results about "Organic field-effect transistor" patented technology

A kind of pentacene field effect transistor of improving anti-fatigue characteristic, n-type semiconductor layer and charge trapping layer with shallow energy level trap are arranged in pentacene field effect transistor structure;Device has bottom gate type structure: gate electrode / gate insulating layer / n-type semiconductor film / charge trapping dielectric layer with shallow energy level trap / tunneling layer / pentacene / source (drain) electrode;Gate electrode is conductor, resistivity is between 0.1-0.001 Ω·cm;Gate insulating layer dielectric film is insulator, thickness range is 5-150nm;The thickness of n-type semiconductor film layer is 1-200nm;Charge trapping dielectric layer with shallow energy level hole trap, thickness is 1-100nm;Tunneling layer is insulator, thickness range is 1-20nm;Pentacene thickness range is 1-100nm;Source-drain electrode is conductor, thickness range is 50-200nm;Gate electrode is conductor.

The application provides a cyclic imide derivative with a high-efficiency multi-exciton effect and a synthesis method and application thereof, and belongs to the technical field of organic optoelectronic materials. The cyclic imide derivative has any one of the following structural formulae: wherein n is 1 or 2 or 3; m is an integer in 1-15; Ar represents an aryl group; and R is selected from a substituted or unsubstituted C1-C15 alkyl chain or a phenyl chain. The application directly synthesizes a novel cyclic compound through a synthesis method, and a series of different cyclic imide compounds can be further synthesized by changing the number of aryl groups on the ring and the type of imide compounds. Experimental tests prove that the cyclic imide compound can be applied in the field of singlet fission materials, and excellent bipolar transport performance is exhibited when the cyclic imide compound is applied in an organic field effect transistor device, so the cyclic imide compound has a good industrial application prospect.

The invention discloses a source electrode, a vertical organic field effect transistor and a preparation method of the vertical organic field effect transistor. The preparation method of the source electrode comprises the following steps: preparing a source electrode precursor solution; preparing a self-assembly interface; preparing a low-dimensional material film; exposing the transfer inlet; transferring a low-dimensional material film; volatilizing the solvent; and annealing treatment. The vertical organic field effect transistor is characterized in that a grid substrate, a dielectric layer, a source electrode, an organic semiconductor layer and a drain electrode are sequentially stacked, and a test contact point is arranged on the source electrode. According to the invention, the preparation of the vertical organic field effect transistor source electrode with low roughness and low cost is realized, and a high-performance vertical organic field effect transistor device with high switching current ratio and large current density characteristics is realized.

The invention belongs to the technical field of eutectic semiconductor materials, and discloses a D-A type acene-perylene bisimide eutectic crystal, an organic field effect transistor and a preparation method and application of the D-A type acene-perylene bisimide eutectic crystal and the organic field effect transistor. As a bipolar semiconductor material, the D-A acene-perylene bisimide eutectic crystal shows balanced bipolar with excellent performance, has an ultrahigh on-off ratio, and shows great application value in the aspect of electronic circuits.

The application discloses a method for P-type doping of an organic field effect transistor semiconductor layer and an organic field effect transistor prepared by the method. 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (F4-TCNQ) is dissolved in an orthogonal solvent of the organic semiconductor layer as a P-type dopant, and the P-type dopant is spin-coated on an organic semiconductor layer film which has been spin-coated in an air atmosphere, and the doping is activated by rapid thermal annealing, so that the problems caused by hopping transmission and Coulomb traps in charge transport are improved, the threshold voltage is reduced, and the on-off ratio is improved. For a P-type field effect transistor, the P-type doping enhances hole transport, effectively improves the saturation current, and suppresses electron transport, so that the power consumption is reduced when the transistor is turned off. The doping method is based on a solution method and is simple in process and low in preparation cost, can be applied to large-scale production, and has a good application prospect in flexible and portable electronic devices.

Disclosed in the present application are a carbazole derivative monomolecular layer, a preparation method thereof, a transistor memory and a fabrication method therefor, relating to the technical fields of organic storage and information. The transistor memory comprises a source / drain electrode, a semiconductor layer, a carbazole derivative monomolecular layer, a gate insulating layer, a substrate and a gate electrode which are sequentially arranged. The present application prepares a carbazole derivative monomolecular layer and applies same to organic field effect transistor memories to act as a charge trapping layer of devices. The present application involves a simple operation process and low cost, shortens preparation periods while reducing the difficulty in fabrication of transistor memories, and improves the storage performance and stability of transistor memories.

The application discloses a kind of copolymer organic semiconductor devices based on isolation and interconnection and preparation method, including substrate, photoetching blocking layer, insulating isolation layer, N organic field effect transistor and N-1 interconnection line;Photoetching blocking layer includes isolation layer and inorganic dielectric layer;Isolation layer is opened with N longitudinal through isolation groove along length direction;Inorganic dielectric layer includes lower dielectric layer and upper dielectric layer;Lower dielectric layer is located in N isolation, and upper dielectric layer is laid on the top of isolation layer and lower dielectric layer;Each organic field effect transistor includes semiconductor layer, source, drain and gate;Semiconductor layer is laid in the isolation groove at the bottom of corresponding lower dielectric layer section, and its material is organic copolymer.The application effectively utilizes isolation groove and photoetching blocking layer, and the semiconductor layer of different semiconductor materials is wrapped and isolated, so as to realize the integration of different organic field effect transistors on the same substrate, and the organic field effect transistor can realize effective interconnection.

The application discloses a lateral hetero-insulating layer organic field effect transistor (OFET) and a preparation method and application thereof. The preparation method of the lateral hetero-insulating layer OFET comprises the following steps: sequentially preparing an inorganic insulating layer and an organic insulating layer on a gate electrode; transferring a gold film to the organic insulating layer, and then etching by using oxygen plasma; after etching off the organic insulating layer not covered by the gold film, transferring the gold film to obtain a hetero-insulating layer of the organic insulating layer / inorganic insulating layer; preparing an organic semiconductor layer on the hetero-insulating layer, and the organic semiconductor layer continuously covers the interface of the hetero-insulating layer; and preparing source-drain electrodes on the inorganic insulating layer and the organic semiconductor layer on the organic insulating layer, so that the lateral hetero-insulating layer OFET is obtained. Compared with a conventional rectifier, the rectifier disclosed by the application has the advantages of less raw materials, good universality, no need to select a corresponding opposite type semiconductor like a PN junction rectifier, and no need to select a suitable metal material like a Schottky rectifier.

This invention provides a method for fabricating an organic field-effect transistor (OFET) based on dry transfer of a single-crystal film. The method includes the following steps: depositing an organic semiconductor layer and a dielectric layer sequentially from bottom to top on a first substrate; forming source and drain electrodes on a second substrate; peeling off the composite organic semiconductor layer and dielectric layer from the first substrate and transferring them to cover the second substrate where the source and drain electrodes are formed, such that the source and drain electrodes on the second substrate are in contact with the organic semiconductor layer to form a carrier channel structure; and forming a gate electrode on the dielectric layer after film transfer to obtain the organic field-effect transistor. The organic field-effect transistor fabricated using the technical solution of this application exhibits extremely low contact resistance and high intrinsic mobility, thereby fully utilizing the intrinsic transport performance of organic semiconductors and showing significant advantages in improving the performance of OFET devices.

The invention belongs to the technical field of organic field effect transistors, and particularly relates to a high-mobility field effect transistor based on an organic double-quantum well structure and a preparation method of the high-mobility field effect transistor. The high-mobility field effect transistor comprises a grid electrode, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, the insulating layer is located between the grid electrode and the organic semiconductor layer, an OTS modification layer is arranged between the insulating layer and the organic semiconductor layer, and the organic semiconductor layer is composed of a C8-BTBT layer / (Pentaene layer / C8-BTBT layer) n and n = 2 in the direction from the grid electrode to the source electrode and the drain electrode. According to the organic double-quantum well composed of C8-BTBT and pentacene, a potential well is formed by alternating different energy gap materials, carriers are limited in a narrow energy band region, scattering is reduced, directional transportation is promoted, and the mobility of the transistor is greatly improved.

The application belongs to the technical field of organic semiconductor materials, and particularly relates to an intrinsic low-melting-point polymer semiconductor material and a preparation method and application thereof. The polymer semiconductor material is a pyrrolopyrroloquinoline intrinsic low-melting-point polymer with a macrocyclic crown ether as a side chain. The application reduces the melting point of an existing organic polymer by introducing the macrocyclic crown ether into the side chain. The polymer provided by the application can be used to obtain a high-orientation semiconductor thin film through a melt friction transfer method, and the semiconductor thin film can be used as an organic semiconductor layer in an organic field effect transistor to obtain a new organic field effect transistor. The carrier mobility of the organic field effect transistor is improved by regulating a molecular packing mode. The application provides a feasible method for solvent-free processing of an organic field effect transistor device, which will help to solve the environmental pollution problem caused by traditional solution processing using a chlorinated solvent.

The invention discloses a novel flexible stretchable polymer as well as a preparation method and application thereof, and belongs to the technical field of organic semiconductor materials. The flexible stretchable polymer disclosed by the invention can be applied to preparation of an organic semiconductor layer, a field effect transistor prepared by taking the polymer disclosed by the invention as the organic semiconductor layer has an excellent electron transmission characteristic and a good stretchable characteristic, and the highest electron mobility is 0.42 cm < 2 >. V <-1 >. S <-1 >; the method has a wide application prospect when being applied to the stretchable organic field effect transistor. In addition, the polymer shown in the formula (I) is subjected to amino protection, bromination, deprotection, condensation of anhydride and amine and other reactions to obtain a corresponding flexible monomer, and the flexible monomer is prepared through Stille copolymerization. The synthesis route is simple to operate, few in synthesis steps, high in yield and suitable for large-scale synthesis.

The application provides a directional rubbing device, a method for constructing a nanochannel, a method for directional growth of a nanowire array, and the nanowire array and application. The directional rubbing device can quickly form a nanoscale channel array with a certain orientation on an amorphous substrate, the area of the constructed channel array is controllable, and the width, density and depth of the channel can be controlled by adjusting the mesh number of the sandpaper and the number of the pressing blocks of the rubbing device; then the amorphous substrate is subjected to hydrophobic modification, and a MPc nanowire array with good distribution uniformity, good orientation and good stability can be grown on the substrate with the directional rubbing nanochannel array by using a PVD method; and the obtained nanowire array can be applied to an organic field effect transistor and a photodetector product.

The application discloses a kind of based on pyrene base material functionalized organic single crystal field effect transistor construction method, belong to organic electronic material and organic field effect transistor interface engineering technical field, the application proposes a kind of in the surface of C6-DPA organic single crystal transistor device of bottom gate top contact structure construction 2- (pyrene-1-yl methylene amino) phenol functional layer method.2- (pyrene-1-yl methylene amino) phenol has good thermal stability of rigid conjugated pyrene skeleton, also contains Schiff base imine bond and phenolic hydroxyl group and other active sites that can further participate in interface interaction;By optimizing its synthesis route, evaporation process parameters and transistor surface deposition conditions, a uniform, dense and thickness controllable functional interface layer can be constructed under the premise of maintaining the original high performance of the device. The method of the application emphasizes dry deposition instead of traditional wet functionalization, focuses on solving the problems of insufficient thermal stability of functional layer, high surface roughness, uncontrollable thickness and large performance loss of device, and provides a material and process scheme with universal value for organic single crystal transistor interface engineering.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

The invention discloses a method for synthesizing functional pyrrole through photocatalysis of N-arylglycine and 1, 3-eneyne. According to the method, N-arylglycine is decarboxylated through photocatalysis to form an alpha-amino alkyl free radical, and the free radical and 1, 3-eneyne are subjected to free radical addition, cyclization and oxidative aromatization reaction to construct polysubstituted pyrrole. Pyrrole serves as a heterocyclic compound with great importance, widely exists in numerous drug compounds and bioactive molecules, shows electronic characteristics with great prospects in organic photovoltaic devices (OPVs) and organic field effect transistors (OFETs), is also a key structural unit in synthesis of pesticides, natural products and dyes, and has a broad application prospect. Powerful support is provided for multi-industry development, and the application prospect is wide. The polysubstituted pyrrole compound is synthesized through a one-pot method, and a new method is provided for preparing the novel polysubstituted pyrrole compound.

The invention provides a cyanation quinoxaline-based n-type polymer semiconductor material and a preparation method and application thereof, and the cyanation quinoxaline-based n-type polymer semiconductor material has a chemical structural general formula as follows: in the n-type polymer semiconductor material, quinoxaline is used as a matrix and has good solubility and a planar skeleton structure, and the structural formula is shown in the specification. The introduction of the cyano group significantly reduces the electricity shortage of the quinoxaline, so that the prepared n-type polymer semiconductor material has lower molecular front track energy level and more excellent photoelectric properties, thereby showing excellent application potential in the fields of organic field effect transistors, organic thermoelectricity or organic solar cells and the like.

The invention discloses a D-A type carbazole bridging tension grid material, a floating gate type organic field effect transistor memory and a preparation method of the floating gate type organic field effect transistor memory. The memory comprises a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, a semiconductor layer and source and drain electrodes which are sequentially arranged from bottom to top, according to the charge trapping layer, a 3-10 g / mL solution is prepared from a D-A type carbazole bridging tension grid material, and a single-component film is obtained in the air in a spin-coating mode. The invention provides a bipolar memory with high stability and tolerance. Bipolar storage (90V) is realized, and high mobility (0.43 cm < 2 > V <-1 > S <-1 >) is realized; the material has high storage stability and tolerance, after 104s test, no obvious charge leakage condition exists, and Ion / Ioff is greater than 102.

The application belongs to the field of transistor devices, and discloses an organic field effect transistor device and a preparation method thereof. The preparation method comprises the following steps: preparing a covalent triazine organic framework nanosheet dispersion liquid by electrochemical exfoliation of a covalent triazine organic framework material, and standing; injecting the covalent triazine organic framework nanosheet dispersion liquid drop by drop onto the liquid surface of ultrapure water, and passing a SiO2 / Si substrate through the interface between the covalent triazine organic framework nanosheet and the ultrapure water to obtain a SiO2 / Si substrate containing triazine covalent organic framework nanosheets; and sequentially evaporating a chromium layer and a gold layer on the SiO2 / Si substrate containing triazine covalent organic framework nanosheets by using a vacuum thermal evaporation coating machine to obtain the organic field effect transistor device. The application is conducive to widening the application range of the organic field effect transistor device prepared according to the covalent triazine organic framework material.

The application discloses a bipolar polymer semiconductor material containing difluoro-substituted indathrene and a preparation method and application thereof. N The copolymerization of the obtained copolymer monomer and 5,5'- (bistrimethyltinyl) -2,2'-dithiophene or (E) -1,2- (5- (bistrimethyltinyl) -thiophene-2-yl) ethylene, a centrosymmetric monomer, through a bromination reaction of bromo-succinimide to obtain a novel bipolar polymer semiconductor material containing difluoro-substituted indathrene with a D-A configuration. The synthesis route of the application is simple and efficient, raw materials are easy to obtain, the cost is low, the universality is high, and the repeatability is good. The material has the advantages of good solubility, excellent thermal stability and strong absorption spectrum range. The bipolar polymer semiconductor material prepared by the application is used as an active layer material, and an organic field effect transistor device prepared by the application has excellent electrical performance. The material has broad commercial prospects in organic thermoelectricity, organic field effect transistors, organic logic complementary circuits and other optoelectronic devices.

The application discloses a device and method for cutting fluoranthene crystal by using a photo-induced electric field of lithium niobate. The method uses a spatial electric field generated by laser irradiation of iron-doped lithium niobate to realize cutting of micron-size fluoranthene crystal under heating conditions. The whole device is simple to build, and realizes real-time control of the crystal cutting position and residual length. The technology can be applied to various applications of organic field effect transistors and other organic optoelectronics, and has important significance for processing and modification of organic crystals.

The invention belongs to the field of gas sensors, and particularly relates to a flexible ammonia gas sensor based on an organic field effect transistor and a preparation method and application thereof. The flexible ammonia gas sensor is of a bottom gate top contact type structure and sequentially comprises a substrate, a gate electrode, a first dielectric layer, a second dielectric layer, an organic semiconductor layer, a source electrode and a drain electrode from bottom to top, the first dielectric layer is a PMMA dielectric layer, the second dielectric layer is a PHPS dielectric layer, and semiconductor materials of the organic semiconductor layer are selected from specific p-type polymers. The flexible ammonia gas sensor is large in current response amplitude to ppm-level low-concentration ammonia gas and clear in concentration-response relation, interlayer stress and interface defects of a device in the bending process are reduced, and the requirements of low power consumption and long-term operation are met.

Organic field-effect transistors (OFETs) have some advantages over inorganic transistors, for example, due to being physically flexible and lightweight. Additionally, OFETs can cover large-areas and can potentially be mass-produced at a low cost. It is recognized herein, however, that a technical challenge related to OFET design is evaluating effects at multiple length scales during the design process.

Provided herein are naphthalene diimide (NDI) compounds and their use in thin films, methods of making thin films, photovoltaic devices comprising NDI thin films, and methods of making photovoltaic devices comprising NDI thin films. Additionally contemplated are organic light-emitting diodes comprising NDI thin films, photodetectors comprising NDI thin films, and organic field-effect transistors (OFETs) comprising NDI thin films.

The invention discloses a total acceptor type conjugated polymer and a preparation method and application thereof, the total acceptor type conjugated polymer is an acceptor-acceptor type conjugated polymer based on a sulfur-containing heterocycle isoindigo derivative and benzodifuran diketone, the structural general formula of the total acceptor type conjugated polymer is shown in the specification, in the formula, X is C or N, R1 is a C8-C24 alkane chain, and n is greater than or equal to 1. The total acceptor conjugated polymer is synthesized through aldol condensation polymerization and has good solution processability, the molecular structure has high planarity, the LUMO energy level and the HOMO energy level are reduced due to the electron deficiency capability, and the electron transmission performance of a material can be promoted. The polymer can be used as an electron transport material and is applied to the field of organic field effect transistors.

This invention discloses an organic field-effect transistor memory based on organic micro / nano crystals and its fabrication method. The memory comprises, from bottom to top, a substrate, a gate electrode, a gate insulating layer, a polymer modification layer, an organic micro / nano crystal thin film layer, an organic semiconductor layer, and source / drain electrodes. The organic micro / nano crystal in the thin film layer is a two-dimensional micro / nano crystal with uniform morphology and size based on organic fluorene-based small molecules and thin film compatibility. The molecular configuration of the organic fluorene-based small molecules consists of two dimethyl groups modified on a fluorene group structure. This invention, based on organic micro / nano crystals, starts with the materials and then modulates the thin film morphology to achieve simple fabrication and environmentally friendly green solution processing, improving the device's storage performance. The prepared organic small molecule micro / nano crystal layer can improve the device's storage performance and has characteristics such as high storage density and high data stability.

This invention belongs to the field of organic electronic device technology and discloses a planar gate structure longitudinal copolymer organic field-effect transistor and its fabrication method. The longitudinal copolymer organic field-effect transistor structure sequentially includes a substrate, a drain, an organic semiconductor layer, a source, an organic dielectric layer, and a gate, wherein the gate is located on the top layer, the drain is located on the bottom layer, and the source is located on the middle layer. The drain forms a fully covered planar electrode above the substrate. The source and gate are composed of multiple parallel, equally spaced strip electrodes in an interdigitated distribution. The channel length between the source and drain is the thickness of the organic semiconductor layer, which is determined by the concentration of the organic solution and the spin coating speed, and the channel length is 40nm~300nm. Because the gate adopts a planar gate structure, this invention eliminates the need for high-precision etching and photolithography processes, reducing the fabrication difficulty of the longitudinal copolymer organic field-effect transistor.

The application discloses a kind of based on fluorenyl small molecule molecular field effect transistor memory and preparation method thereof, belong to information storage technical field.The charge capture layer of the memory is made into single film by the way of solution processing after being made by fluorenyl small molecule material 3Ph-TrH, and the spiro structure of small molecule material 3Ph-TrH effectively increases steric hindrance, inhibits the effect of charge leakage, with excellent hole trapping capacity and electron trapping capacity, so that memory device shows bipolar storage (42.8V), high stability, good resistance and other excellent performance, the mobility of the single-molecule thin film device reaches 0.35cm 2 V ‑1 s ‑1 , switch ratio exceeds 10 5 , higher maintenance performance;In addition, the preparation process of the memory device is simple, can greatly reduce production cost, is conducive to the popularization and application of this kind of device.

The invention particularly relates to an ultrasensitive dual-mode biosensor based on an organic field effect transistor and a preparation method thereof, and belongs to the technical field of biosensors. The sensor adopts a blended film prepared from a conjugated polymer and a copper / dysprosium bimetallic nano material as a semiconductor layer. After the surface of the film is modified with a specific antibody, dual calibration of the concentration of the target biomarker is realized by detecting the threshold voltage variation and the source-drain current variation, and the detection accuracy is remarkably improved. The prepared blended film can effectively block H2O and O2 in the environment, and the operation and storage stability of a device is improved; the double-end broom-shaped nanostructure realizes ultra-sensitive detection of a target marker; and by combining dual-mode signal mutual calibration and machine learning algorithm analysis, the detection sensitivity and reliability are enhanced. The sensor has the advantages of no label, rapidness, simplicity and the like, and has great application potential.

The application discloses a non-fused ring n-type organic semiconductor material and a preparation method and application thereof, and belongs to the technical field of organic semiconductor materials. The structure of the non-fused ring n-type organic semiconductor material is shown in the formula: wherein R is one of H, F and Cl. The non-fused ring n-type organic semiconductor material is an A-DA'D-A type organic semiconductor small molecule, can keep a good planar conjugated structure, can effectively release the tension in the molecule, and can make the organic semiconductor material molecules be capable of realizing pi-pi stacking through 3-(dicyanomethylene) indanone end groups, realizing rapid film formation of the organic semiconductor material molecules in OFET, and having good electron mobility, and can be used for preparation of a semiconductor layer in an organic field effect transistor device.