111 results about "Organic field-effect transistor" patented technology

The invention relates to the technical field of photosensitive sensing, and discloses an organic semiconductor material and an organic field effect transistor, the organic semiconductor material comprises a main body transmission material and a photosensitive doping material, the photosensitive doping material comprises a donor and an acceptor, the lowest unoccupied molecular orbital energy level of the main body transmission material is higher than the highest occupied molecular orbital energy level of a donor of the photosensitive doping material; the lowest unoccupied molecular orbital energy level of the main body transmission material is lower than the lowest unoccupied molecular orbital energy level of an acceptor of the photosensitive doped material; the highest occupied molecular orbital energy level of the host transport material is lower than the highest occupied molecular orbital energy level of the donor of the photosensitive doped material. The organic semiconductor material has a light negative response characteristic.

A kind of pentacene field effect transistor of improving anti-fatigue characteristic, n-type semiconductor layer and charge trapping layer with shallow energy level trap are arranged in pentacene field effect transistor structure;Device has bottom gate type structure: gate electrode / gate insulating layer / n-type semiconductor film / charge trapping dielectric layer with shallow energy level trap / tunneling layer / pentacene / source (drain) electrode;Gate electrode is conductor, resistivity is between 0.1-0.001 Ω·cm;Gate insulating layer dielectric film is insulator, thickness range is 5-150nm;The thickness of n-type semiconductor film layer is 1-200nm;Charge trapping dielectric layer with shallow energy level hole trap, thickness is 1-100nm;Tunneling layer is insulator, thickness range is 1-20nm;Pentacene thickness range is 1-100nm;Source-drain electrode is conductor, thickness range is 50-200nm;Gate electrode is conductor.

The application provides a cyclic imide derivative with a high-efficiency multi-exciton effect and a synthesis method and application thereof, and belongs to the technical field of organic optoelectronic materials. The cyclic imide derivative has any one of the following structural formulae: wherein n is 1 or 2 or 3; m is an integer in 1-15; Ar represents an aryl group; and R is selected from a substituted or unsubstituted C1-C15 alkyl chain or a phenyl chain. The application directly synthesizes a novel cyclic compound through a synthesis method, and a series of different cyclic imide compounds can be further synthesized by changing the number of aryl groups on the ring and the type of imide compounds. Experimental tests prove that the cyclic imide compound can be applied in the field of singlet fission materials, and excellent bipolar transport performance is exhibited when the cyclic imide compound is applied in an organic field effect transistor device, so the cyclic imide compound has a good industrial application prospect.

The invention discloses a source electrode, a vertical organic field effect transistor and a preparation method of the vertical organic field effect transistor. The preparation method of the source electrode comprises the following steps: preparing a source electrode precursor solution; preparing a self-assembly interface; preparing a low-dimensional material film; exposing the transfer inlet; transferring a low-dimensional material film; volatilizing the solvent; and annealing treatment. The vertical organic field effect transistor is characterized in that a grid substrate, a dielectric layer, a source electrode, an organic semiconductor layer and a drain electrode are sequentially stacked, and a test contact point is arranged on the source electrode. According to the invention, the preparation of the vertical organic field effect transistor source electrode with low roughness and low cost is realized, and a high-performance vertical organic field effect transistor device with high switching current ratio and large current density characteristics is realized.

The present invention discloses a method for a functional layer of a high-precision non-destructive lithographic organic field-effect transistor compatible with a flexible elastic material. The method comprises the following steps: depositing a functional layer of an organic field-effect transistor on the surface of a substrate, and preparing a water-resistant protective layer or a double protective layer of a water-resistant protective layer and a solvent-resistant protective layer on the functional layer; spin-coating a photoresist on the solvent-resistant protective layer or the double protective layer for lithography to form a patterned photoresist film; etching the substrate; and sequentially post-treating the substrate to remove the patterned photoresist film, the water-resistant protective layer and the solvent-resistant protective layer to obtain the product. The method of the present invention has a simple process and universality. It can not only lithograph an organic semiconductor layer, but also lithograph an organic insulating layer and a polymer electrode layer. All the lithographic patterning of each functional layer of the organic field-effect transistor can be achieved by one lithography method.

The invention belongs to the technical field of eutectic semiconductor materials, and discloses a D-A type acene-perylene bisimide eutectic crystal, an organic field effect transistor and a preparation method and application of the D-A type acene-perylene bisimide eutectic crystal and the organic field effect transistor. As a bipolar semiconductor material, the D-A acene-perylene bisimide eutectic crystal shows balanced bipolar with excellent performance, has an ultrahigh on-off ratio, and shows great application value in the aspect of electronic circuits.

The invention discloses a highly coplanar electron transport type small-molecule semiconductor material and a preparation method thereof, and the structural formula of the highly coplanar electron transport type small-molecule semiconductor material is shown in the specification: # imgabs0 # preparation method comprises the following steps: firstly obtaining an intermediate a, obtaining an intermediate b by using the intermediate a, generating an intermediate c by using the intermediate b, and preparing the highly coplanar electron transport type small-molecule semiconductor material. And finally, obtaining the highly coplanar electron transport type small molecule semiconductor material by utilizing the intermediate c. The highly coplanar electron transport type small-molecule semiconductor material can be applied to organic field effect transistors. The method has a wide application prospect in the organic electronic fields of organic thin film transistors, organic photovoltaics, organic thermoelectricity and the like.

The invention belongs to the technical field of organic electronic devices, and particularly relates to application of a full-photoetching organic field effect transistor based on an interdigital structure in manufacturing of a power integrated circuit. The power integrated circuit manufactured by using the full-photoetching organic field effect transistor of the interdigital structure adopts an upper dielectric layer as a photoetching barrier layer; a photoetching technology is successfully introduced into preparation of an organic circuit by combining a through hole technology, a plurality of organic field effect transistors can be integrated on the same substrate by the preparation technology, effective interconnection of the organic field effect transistors can be realized, and an interdigital channel structure can be used for improving the performance of the device by optimizing an internal carrier transmission path of the device. The circuit conduction current can be obviously improved, and the conduction resistance can be reduced.

The present invention discloses a small molecule floating gate type organic field effect transistor memory based on fluorenone derivatives and a preparation method thereof. The memory includes a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, a semiconductor layer, and source-drain electrodes which are sequentially arranged from bottom to top. The electron trapping layer is composed of a floating gate layer made of a small molecule of fluorenone derivative and a tunneling layer and a charge blocking layer made of a high dielectric constant polymer. The field effect transistor memory of the present invention uses a small molecule material with a simple structure as the floating gate layer, realizes bipolar storage performance, has stable device performance, high tolerance, large storage density, adopts a simple processing technology, can be prepared in a large area, is suitable for the preparation of flexible devices, reduces the production cost of the device, and is conducive to the popularization and application of organic field effect transistor memories.

The application discloses a method for P-type doping of an organic field effect transistor semiconductor layer and an organic field effect transistor prepared by the method. 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (F4-TCNQ) is dissolved in an orthogonal solvent of the organic semiconductor layer as a P-type dopant, and the P-type dopant is spin-coated on an organic semiconductor layer film which has been spin-coated in an air atmosphere, and the doping is activated by rapid thermal annealing, so that the problems caused by hopping transmission and Coulomb traps in charge transport are improved, the threshold voltage is reduced, and the on-off ratio is improved. For a P-type field effect transistor, the P-type doping enhances hole transport, effectively improves the saturation current, and suppresses electron transport, so that the power consumption is reduced when the transistor is turned off. The doping method is based on a solution method and is simple in process and low in preparation cost, can be applied to large-scale production, and has a good application prospect in flexible and portable electronic devices.

Disclosed in the present application are a carbazole derivative monomolecular layer, a preparation method thereof, a transistor memory and a fabrication method therefor, relating to the technical fields of organic storage and information. The transistor memory comprises a source / drain electrode, a semiconductor layer, a carbazole derivative monomolecular layer, a gate insulating layer, a substrate and a gate electrode which are sequentially arranged. The present application prepares a carbazole derivative monomolecular layer and applies same to organic field effect transistor memories to act as a charge trapping layer of devices. The present application involves a simple operation process and low cost, shortens preparation periods while reducing the difficulty in fabrication of transistor memories, and improves the storage performance and stability of transistor memories.

The application discloses a kind of copolymer organic semiconductor devices based on isolation and interconnection and preparation method, including substrate, photoetching blocking layer, insulating isolation layer, N organic field effect transistor and N-1 interconnection line;Photoetching blocking layer includes isolation layer and inorganic dielectric layer;Isolation layer is opened with N longitudinal through isolation groove along length direction;Inorganic dielectric layer includes lower dielectric layer and upper dielectric layer;Lower dielectric layer is located in N isolation, and upper dielectric layer is laid on the top of isolation layer and lower dielectric layer;Each organic field effect transistor includes semiconductor layer, source, drain and gate;Semiconductor layer is laid in the isolation groove at the bottom of corresponding lower dielectric layer section, and its material is organic copolymer.The application effectively utilizes isolation groove and photoetching blocking layer, and the semiconductor layer of different semiconductor materials is wrapped and isolated, so as to realize the integration of different organic field effect transistors on the same substrate, and the organic field effect transistor can realize effective interconnection.

The invention provides a process for preparing a high-sensitivity organic field effect transistor gas sensor by using donor-receptor type molecules, and belongs to the technical field of gas sensors. According to the invention, weak interaction force is generated when the D-A type molecular layer is in contact with the gas to be detected, so that intramolecular charge transfer occurs, the dipole distance of the D-A type molecules is changed, and the current flowing through the source and drain electrodes of the organic field effect transistor is changed, so that the response speed and sensitivity of the field effect transistor are enhanced. The result of the embodiment shows that the migration rate of the organic field effect transistor gas sensor provided by the invention is 0.3-2cm < 2 > V <-1 > s <-1 >, and the detection responsivity of the organic field effect transistor gas sensor to nitric oxide with the concentration of 1ppm can reach 21%.

The present invention belongs to the technical field of food biogenic amine detection, and discloses an organic field effect transistor gas sensor, an odor measurement circuit and a method. According to the present invention, the organic field effect transistor and the odor detection circuit sense food biogenic amine, causing changes in the internal characteristics of the organic field effect transistor, which in turn leads to changes in the circuit voltage signal. The voltage gain of the feedback circuit is adjusted according to the voltage signal displayed on the oscilloscope, so that the voltage displayed on the oscilloscope is equal to the source voltage, realizing the adjustment of the voltage gain by the mobile terminal. Based on the relationship between the source voltage and the voltage gain, the changes in the charge carrier mobility and the threshold voltage are determined. Thus, the detection result of food biogenic amine is obtained according to the changes in the charge carrier mobility or the threshold voltage, achieving the purpose of rapid on-site detection.

The invention relates to the technical field of novel electron-deficient acceptor units, polymer synthesis and organic electronic materials, in particular to an asymmetric boron-nitrogen condensed acceptor unit with a skeleton containing boron-nitrogen coordination bonds and a boron-nitrogen condensed ring structure, and preparation and application thereof. A boron-nitrogen condensed receptor unit with a strong electron deficiency characteristic is prepared through a Stille coupling reaction, a boron-nitrogen condensation reaction and a bromination reaction, and a high-performance boron-nitrogen condensed polymer with a deep LUMO energy level is further prepared. The boron-nitrogen fused polymer is used as the organic semiconductor layer, so that the prepared organic field effect transistor shows relatively high electron mobility. According to the invention, efficient synthesis of electron-deficient acceptors and preparation of high-electron-mobility organic transistors are realized, application of n-type organic polymer materials in the field of organic photoelectricity and the field of flexible electronic display is promoted, and the n-type organic polymer material has important significance in industrialization of high-performance organic electronic devices.

The invention belongs to an organic field effect transistor, and particularly relates to an organic semiconductor heterojunction photon synapse transistor and a preparation method thereof. The organic semiconductor heterojunction photon synapse transistor comprises a source electrode, a drain electrode, an organic active layer, a gate insulating layer and a gate electrode, the organic active layer is composed of an N, N '-disalicylidene group-1, 3-diaminopropane layer and a pentacene layer. The transistor provided by the invention has good transistor field effect and photon flash memory performance, has good light control synapse performance, and can realize various types of light synapse functions. And the device is mainly dominated by NSP, the photoresponse rate and the photoresponse dynamic range at 435 nm are maximum, and the near ultraviolet light can be well identified. Due to the relative stability of the small molecule material, the performance of the device does not decline within the temperature range of 120 DEG C, and meanwhile self-adaptive learning can be achieved at different temperatures.

The application discloses a lateral hetero-insulating layer organic field effect transistor (OFET) and a preparation method and application thereof. The preparation method of the lateral hetero-insulating layer OFET comprises the following steps: sequentially preparing an inorganic insulating layer and an organic insulating layer on a gate electrode; transferring a gold film to the organic insulating layer, and then etching by using oxygen plasma; after etching off the organic insulating layer not covered by the gold film, transferring the gold film to obtain a hetero-insulating layer of the organic insulating layer / inorganic insulating layer; preparing an organic semiconductor layer on the hetero-insulating layer, and the organic semiconductor layer continuously covers the interface of the hetero-insulating layer; and preparing source-drain electrodes on the inorganic insulating layer and the organic semiconductor layer on the organic insulating layer, so that the lateral hetero-insulating layer OFET is obtained. Compared with a conventional rectifier, the rectifier disclosed by the application has the advantages of less raw materials, good universality, no need to select a corresponding opposite type semiconductor like a PN junction rectifier, and no need to select a suitable metal material like a Schottky rectifier.

The invention relates to the technical field of organic chemical molecular design and organic photoelectric materials, in particular to an acceptor unit with a skeleton containing thiophene modified benzoxadiazole derivatives, side chain alkyl substitution and main chain vinyl bridging, and preparation and application of the acceptor unit. According to the present invention, the skeleton contains the thiophene-modified benzoxadiazole derivative, the side chain alkyl substituted and main chain vinyl bridged acceptor unit is the strong electron-deficient acceptor unit with high main chain planarity, and further, the n-type polymer is prepared through the improved co-catalysis direct arylation polymerization process based on the acceptor unit, and the commercialization process of organic electrons is greatly promoted. According to the invention, the n-type polymer with a unique electron-structure synergistic effect is used as an organic semiconductor layer, and the prepared organic field effect transistor shows a creative electron mobility.

This invention provides a method for fabricating an organic field-effect transistor (OFET) based on dry transfer of a single-crystal film. The method includes the following steps: depositing an organic semiconductor layer and a dielectric layer sequentially from bottom to top on a first substrate; forming source and drain electrodes on a second substrate; peeling off the composite organic semiconductor layer and dielectric layer from the first substrate and transferring them to cover the second substrate where the source and drain electrodes are formed, such that the source and drain electrodes on the second substrate are in contact with the organic semiconductor layer to form a carrier channel structure; and forming a gate electrode on the dielectric layer after film transfer to obtain the organic field-effect transistor. The organic field-effect transistor fabricated using the technical solution of this application exhibits extremely low contact resistance and high intrinsic mobility, thereby fully utilizing the intrinsic transport performance of organic semiconductors and showing significant advantages in improving the performance of OFET devices.

The invention belongs to the technical field of organic field effect transistors, and particularly relates to a high-mobility field effect transistor based on an organic double-quantum well structure and a preparation method of the high-mobility field effect transistor. The high-mobility field effect transistor comprises a grid electrode, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, the insulating layer is located between the grid electrode and the organic semiconductor layer, an OTS modification layer is arranged between the insulating layer and the organic semiconductor layer, and the organic semiconductor layer is composed of a C8-BTBT layer / (Pentaene layer / C8-BTBT layer) n and n = 2 in the direction from the grid electrode to the source electrode and the drain electrode. According to the organic double-quantum well composed of C8-BTBT and pentacene, a potential well is formed by alternating different energy gap materials, carriers are limited in a narrow energy band region, scattering is reduced, directional transportation is promoted, and the mobility of the transistor is greatly improved.

Provided is a resin which is excellent in terms of solubility in common solvents, crosslinking temperature, time required for crosslinking, solvent resistance (cracking resistance), breakdown voltage, leakage current, solvent wettability, and planarity in cases where the resin is formed into a thin film. A resin which comprises repeating units represented by formula (1) and formula (2), and wherein the repeating unit represented by formula (2) is contained in an amount of 20% by mole or more relative to the total amount of the repeating units represented by formula (1) and formula (2).

The application belongs to the technical field of organic semiconductor materials, and particularly relates to an intrinsic low-melting-point polymer semiconductor material and a preparation method and application thereof. The polymer semiconductor material is a pyrrolopyrroloquinoline intrinsic low-melting-point polymer with a macrocyclic crown ether as a side chain. The application reduces the melting point of an existing organic polymer by introducing the macrocyclic crown ether into the side chain. The polymer provided by the application can be used to obtain a high-orientation semiconductor thin film through a melt friction transfer method, and the semiconductor thin film can be used as an organic semiconductor layer in an organic field effect transistor to obtain a new organic field effect transistor. The carrier mobility of the organic field effect transistor is improved by regulating a molecular packing mode. The application provides a feasible method for solvent-free processing of an organic field effect transistor device, which will help to solve the environmental pollution problem caused by traditional solution processing using a chlorinated solvent.

The invention discloses a novel flexible stretchable polymer as well as a preparation method and application thereof, and belongs to the technical field of organic semiconductor materials. The flexible stretchable polymer disclosed by the invention can be applied to preparation of an organic semiconductor layer, a field effect transistor prepared by taking the polymer disclosed by the invention as the organic semiconductor layer has an excellent electron transmission characteristic and a good stretchable characteristic, and the highest electron mobility is 0.42 cm < 2 >. V <-1 >. S <-1 >; the method has a wide application prospect when being applied to the stretchable organic field effect transistor. In addition, the polymer shown in the formula (I) is subjected to amino protection, bromination, deprotection, condensation of anhydride and amine and other reactions to obtain a corresponding flexible monomer, and the flexible monomer is prepared through Stille copolymerization. The synthesis route is simple to operate, few in synthesis steps, high in yield and suitable for large-scale synthesis.

The invention discloses an n-type semiconductor constructed by quinone synergistic imide and a preparation method and application thereof, a polymer semiconductor material is obtained by polymerization of a quinone-imide compound, and the obtained polymer semiconductor material is used for constructing the n-type semiconductor; according to the invention, a quinonoid compound is embedded into an imide structure, so that the whole molecular structure has excellent solubility, good planarity and strong electron deficiency characteristic. Therefore, the prepared n-type polymer semiconductor has good performance and shows superexcellent application potential in the fields of organic solar cells, organic field effect transistors, organic thermoelectricity and the like.

The invention discloses a self-powered gate organic field effect transistor based on a water photovoltaic effect and a preparation method thereof, and is characterized in that the self-powered gate organic field effect transistor sequentially comprises a water photovoltaic gate, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode from bottom to top, and the source electrode and the drain electrode are arranged on the organic semiconductor layer. Wherein the water photovoltaic grid electrode sequentially comprises a flexible substrate, a bottom electrode, a composite film and a top electrode from bottom to top; the water photovoltaic grid composite film comprises a PVA / LiCl polymer film and a plurality of layers of GO films; and the top electrode is arranged on the PVA / LiCl film. The bottom electrode of the water photovoltaic grid electrode is connected with the source electrode through a wire, so that a voltage difference is generated between the grid electrode and the source electrode, a carrier is induced at the interface of the insulating layer and the semiconductor layer, and a plurality of water photovoltaic grid electrodes can be vertically overlapped and connected in series to increase output voltage on the existing device structure according to actual conditions; the source electrode and the drain electrode are connected with an external power supply, and voltage is applied, so that the transistor works normally.

The invention discloses a preparation method of an organic electron transport material P (NDI2OD-T2) single-ended block copolymer, which comprises the following three steps: by taking a 4, 9-dibromo derivative (compound 1) as an initial raw material, synthesizing a polymeric monomer (compound 6) containing a boric acid ester group through Stille coupling, NBS bromination and Suzuki coupling reaction; the preparation method comprises the following steps: carrying out Suzuki coupling polymerization and a deprotection reaction to obtain single-terminal hydroxylated P (NDI2OD-T2)-OH; and directionally connecting the carboxyl-terminated polymer to a hydroxyl end through Steglich coupling, so as to prepare the single-ended block copolymer. Through single-ended functional modification, on the basis of retaining high electron mobility of a main chain of P (NDI2OD-T2), an adjustable block polymer is introduced, so that the electron mobility is improved, the thermal stability and the processing performance of the material and the morphology regularity of a device are effectively improved, and the problems of complex process, limited electron transmission efficiency and single function in the prior art are solved. The obtained single-ended block copolymer can be widely applied to high-performance organic photoelectric devices such as organic field effect transistors, organic solar cells and flexible electronic devices.

The application provides a directional rubbing device, a method for constructing a nanochannel, a method for directional growth of a nanowire array, and the nanowire array and application. The directional rubbing device can quickly form a nanoscale channel array with a certain orientation on an amorphous substrate, the area of the constructed channel array is controllable, and the width, density and depth of the channel can be controlled by adjusting the mesh number of the sandpaper and the number of the pressing blocks of the rubbing device; then the amorphous substrate is subjected to hydrophobic modification, and a MPc nanowire array with good distribution uniformity, good orientation and good stability can be grown on the substrate with the directional rubbing nanochannel array by using a PVD method; and the obtained nanowire array can be applied to an organic field effect transistor and a photodetector product.

The application belongs to the technical field of organic field effect transistors, and particularly relates to preparation of a cellulose-based organotin polymer and application of the cellulose-based organotin polymer in organic field effect transistors. The application effectively breaks the dense hydrogen bond network in a crystal region by covalently grafting bulky and strong-polar organotin polyester side chains on a CNC skeleton, so that the intrinsic dielectric constant is increased from 6.0 to 15, and the dielectric loss is kept extremely low in a wide temperature range. An ultrathin amorphous SiO2 passivation layer is constructed on the surface of the modified CNC by a PHPS in-situ ultraviolet curing technology, so that the bottom layer of the polar trap is effectively isolated, and the pentacene semiconductor layer is induced to grow into a micron-sized and high-crystallinity large-size crystal grain. A high-performance and low-voltage-driven bio-based OFETs device is successfully prepared. In an extremely low driving working voltage, high carrier mobility, extremely low subthreshold swing and a high on-off ratio of up to 10 5 are achieved, and the practical application potential of the bio-based high-dielectric material in low-power-consumption OFETs is expanded.

The application discloses a kind of based on pyrene base material functionalized organic single crystal field effect transistor construction method, belong to organic electronic material and organic field effect transistor interface engineering technical field, the application proposes a kind of in the surface of C6-DPA organic single crystal transistor device of bottom gate top contact structure construction 2- (pyrene-1-yl methylene amino) phenol functional layer method.2- (pyrene-1-yl methylene amino) phenol has good thermal stability of rigid conjugated pyrene skeleton, also contains Schiff base imine bond and phenolic hydroxyl group and other active sites that can further participate in interface interaction;By optimizing its synthesis route, evaporation process parameters and transistor surface deposition conditions, a uniform, dense and thickness controllable functional interface layer can be constructed under the premise of maintaining the original high performance of the device. The method of the application emphasizes dry deposition instead of traditional wet functionalization, focuses on solving the problems of insufficient thermal stability of functional layer, high surface roughness, uncontrollable thickness and large performance loss of device, and provides a material and process scheme with universal value for organic single crystal transistor interface engineering.

The application relates to a low-power-consumption organic field effect transistor (OFET) memory array and a preparation method and application thereof, and belongs to the technical field of semiconductor memory arrays. The memory array of the application adopts an OFET memory as a basic device unit, a dielectric layer of which uses a zinc salt doped polyelectrolyte dielectric material processed by a solution, so that low-voltage operation of the device and effective electrical property regulation can be realized. The OFET memory array of the application has good storage characteristics, and can realize differentiation and effective writing and reading of different pixel points in a figure image through programming of a gate pulse voltage. Compared with traditional technologies, the OFET memory array of the application can simplify a manufacturing process and reduce cost, has advantages such as simple structure, excellent performance and low energy consumption, and is easy to be integrated into a high-density flexible storage array to realize effective electrical pulse imaging and smooth processing and calculation of pictures, thereby providing a new idea for development of storage technologies and imaging, image processing and neuromorphic computing applications.