Structure and fabrication of self-aligned high-performance organic fets

a technology of organic transistors and structures, applied in the field of organic transistors, can solve the problems of significantly different actual mechanics giving rise to charge carriers in organic semiconductors, significantly different organic transistors, and significantly different inorganic transistors, and achieve the effects of low cost, low channel length devices, and high volum
US20070254402A1Inactive Publication Date: 2007-11-01TAP DEV LLC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
TAP DEV LLC
Publication Date
2007-11-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

A low channel length organic field-effect transistor can be produced in high volume and at low cost. The transistor structure includes successively deposited patterned layers of a first conductor layer acting as a source terminal, a first dielectric layer, a second conductor layer acting as a drain terminal, a semiconductor layer, a second dielectric layer, and a third conductor layer acting as the gate terminal. In this structure, the transistor is formed on the edge of the first dielectric between the first conductor layer and the second conductor layer. The second conductor layer is deposited on the raised surfaces formed by the dielectric such that conductive ink does not flow into the trough between the dielectric raised surfaces. This is accomplished by coating a flat or rotary print plate with the conductive ink, and applying the appropriate pressure to deposit the materials only on the raised surfaces of the dielectric. The second metal is automatically aligned to the layer beneath it. Due to this self-alignment and the short channel formed by the thickness of the dielectric material, a high-performance FET is produced without the requirement of high-resolution lithography equipment.
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Description

1. FIELD OF INVENTION

[0001] The present invention relates to organic transistors and, more particularly, to a structure and method of fabricating high performing organic FETs utilizing an efficient high volume self-aligned patterning technique to produce low channel length organic FET devices. 2. DESCRIPTION OF RELATED ART

[0002] Organic field-effect transistors (oFETs) have been proposed for a number of applications including displays, electronic barcodes and sensors. Low cost processes, large-area circuits and the chemically active nature of organic materials are the chief driving forces to make OFETs important in various applications. Many of these objectives depend on a method of fabrication utilizing printing techniques such as flexography, gravure, silk screen and inkjet printing.

[0003] Organic MOS transistors are similar to silicon metal-oxide-semiconductor transistors in operation. The major difference in construction is that the organic MOS transistor utilizes a thin laye...

Claims

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