3489 results about "Silsesquioxane" patented technology

Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

Radiation-curable silsesquioxane resin materials are employed for micro- and nanolithography. The resin materials can include a radiation-curable silsesquioxane resin and a photo-initiator having low viscosity. The low viscosity of the liquid system allows imprinting with low pressure and low temperature; e.g. room temperature. The resist's dry etching resistance is increased and the cured film is more easily separated from the mask. Due to its high modulus after cure, the material allows the fabrication of micro- and nano-features having high aspect ratios while providing a high throughput. Various pattern sizes, for example, ranging from tens of microns to as small as a few nanometers, may be achieved with the UV-curable material system.

A cosmetic composition and process which provides enhanced wear and transfer resistance containing: (a) at least one polypropylsilsesquioxane film forming resin; (b) at least one solvent; and (c) optionally, at least one colorant.

A soluble polyimide polymer with tethered oligomeric silsesquioxane compounds is produced using efficient, gentle reactions. A carboxylic acid attachment point on the polymer backbone is used to connect the oligomeric silsesquioxane. The oligomeric silsesquioxane compound includes an amine or an alcohol on an organic tether, which reacts with the carboxylic acid attachment point to produce either an amide or an ester bond. The amide or ester bond includes a carbonyl carbon directly connected to a phenyl group in the polymer backbone. The resultant polyimide polymer has many beneficial properties.

Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

Alkoxy-modified silsesquioxane compounds are described. The alkoxy-modified silsesquioxane compounds contain an alkoxysilane group that participates in an alkoxysilane-silica reaction as a silica dispersing agent in rubber, with the release of zero to about 0.1% by weight of the rubber of volatile organic compounds (VOC), especially alcohol, during compounding and further processing. Further described are methods for making alkoxy-modified silsesquioxanes, methods for making vulcanizable rubber compounds containing alkoxy-modified silsesquioxanes, vulcanizable rubber compounds containing alkoxy-modified silsesquioxanes, and pneumatic tires comprising a component that contains alkoxy-modified silsesquioxanes.

The present invention relates to a compound represented by Formula (1) and a polymer obtained using the compound: wherein R1 is phenyl which may have substituents, Q1 is hydrogen, halogen, alkyl having 1 to 10 carbon atoms, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cyclohexenyl or phenyl in which optional hydrogen may be replaced by halogen or alkyl having 1 to 5 carbon atoms, and Q2 is a group represented by Formula (2) wherein the code < represents a bonding point with silicon, l, m, n and p are independently 0, 1, 2 or 3, A1 to A4 are independently a single bond, 1,4-cyclohexylene, 1,4-cyclohexenylene, a condensed ring group having 6 to 10 carbon atoms which is a divalent group, or 1,4-phenylene, Z0 to Z3 are independently a single bond, —CH═CR—, —C≡C—, —COO—, —OCO—, or alkylene having 1 to 20 carbon atoms, and Z4 is a single bond, —CH═CH—, —C≡C—, —COO—, —OCO—, or alkylene having 1 to 20 carbon atoms. And Y1 in Formula (1) is the group defined in Claim 1.

A method of forming a coating comprising the steps of dissolving an silsesquioxane (e.g., one that is primarily a cage compound with 8, 10, 12, 14 or related complete cages or with partially condensed cages containing primarily Si(O)4 units in the cage) in a solvent to form an silsesquioxane solution; introducing (e.g., dissolving) an additive in the solution (e.g., the additive being selected from a rare earth compound, an acid, an organic moiety, a precious metal or compound thereof, a transition metal compound, or any combination thereof, or any of their ionic constituents); and optionally mixing a diluent with the solution to form a coating that is applied to a substrate, wherein the resulting coating forms crosslinks between resulting pendant Si(OH)x groups and a substrate surface. The present invention also contemplates coatings and coated articles consistent with the present teachings.

Thermoplastic polyurethanes having an alternating sequence of hard and soft segments in which a nanostructured polyhedral oligosilsesquioxane diol is used as a chain extender to form a crystalline hard segment constituting SMPs. The polyurethanes are formed by reacting a polyol, a chain extender dihydroxyl-terminated polyhedral oligosilsesquioxane and a diisocyanate. The polyurethanes have multiple applications including for example, implants for human health care, drug delivery matrices, superabsorbant hydrogels, coatings, adhesives, temperature and moisture sensors, etc.

A protective polymeric coating is applied to the surface of various objects which are to be exposed to a harsh environment. The protective polymeric coating covers the exposed surface, where the polymeric coating includes a polyimide polymer. The polyimide polymer in the polymeric coating has a backbone with at least one non-terminal phenyl group. A linkage is connected to the non-terminal phenyl group, where the linkage can be an amide linkage or an ester linkage. An oligomeric silsesquioxane compound is connected to the linkage through an organic substituent, where the oligomeric silsesquioxane is not incorporated into the polymer backbone. The polymeric coating provides protection to the underlying object.

A radiation curable ink composition comprising at least one initiator and at least one polyhedral oligomeric silsesquioxane (POSS) represented by the following empirical formula [R(SiO1.5)]n wherein n=4,6,8,10,12,14,16 and larger and each R is independently hydrogen, an inorganic group, an alkyl group, an alkylene group, an aryl group, an arylene group, or non-heterocyclic group-containing organo-functional derivatives of alkyl, alkylene, aryl or arylene groups; and a process for obtaining a colourless, monochrome or multicolour ink jet image comprising the steps of jetting one or more streams of ink droplets having the above-mentioned composition onto an ink-jet ink receiver material, and subjecting the obtained image to radiation curing.

An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and / or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.

The present invention is based on the discovery that maleimide-substituted polyhedralsilsesquioxane compounds are useful as components in photosensistive resin compositions. These compounds can be readily prepared from available precursors, and are easily incorporated into resin compositions by appropriate formulating conditions. The incorporation of a variety of polyhedralsilsesquioxane frameworks into a photosensitive resin composition is readily accomplished via the crosslinkable maleimide moiety, which crosslinks under a variety of conditions (e.g., chemically and radiatively). Indeed, the compounds described herein contain at least one maleimide moiety attached to a polyhedralsilsesquioxane framework.

A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

A silsesquioxane resin wax composition, method for its preparation, and use in personal, household, automotive and medical care compositions are disclosed. The silsesquioxane resin wax can also find utility in a variety of oil and gas field applications, such as for crude oil wax control.

A coating composition and process for generating transparent, near-transparent, and semi-transparent super-hydrophobic coatings on surfaces having a contact angle of greater than 165 degrees. The composition comprises hydrophobic nanoparticles of silsesquioxanes containing adhesion promoter groups and low surface energy groups.

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety.

Thermoplastic polyurethanes having an alternating sequence of hard and soft segments in which a nanostructured polyhedral oligomeric silsesquioxane diol is used as a chain extender to form a crystalline hard segment constituting SMPs. The polyurethanes are formed by reacting a polyol, a chain extender dihydroxyl-terminated POSS and a diisocyanate. The polyurethanes have multiple applications including for example, implants for human health care, drug delivery matrices, superabsorbant hydrogels, coatings, adhesives, temperature and moisture sensors, etc.

Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

A resist resin comprising a copolymer in which a (meth)acrylic structure having a side chain group decomposable with an acid and a polyorganosilsesquioxane structure represented by formula (1) are present in one molecule or a mixture of polymers in which these structures are each present in different molecules as well as a method of forming a pattern using the resist resin:wherein a reference character or numeral represents the same meaning as recited in the specification.The resist resin of the present invention has high sensitivity to a radiation having a short wavelength of 220 nm or less and is capable of forming a fine pattern of 0.15 mum or less.

The nanoscopic dimensions of polyhedral oligomeric silsesquioxanes (POSS) and polyhedral oligomeric silicates (POS) materials ranges from 0.7 nm to 5.0 nm and enables the thermomechanical and physical properties of polymeric materials to be improved by providing nanoscopic reinforcement of polymer chains at a length scale that is not possible by physically smaller aromatic chemical systems or larger fillers and fibers. A simple and cost effective method for incorporating POSS / POS nanoreinforcements onto polymers via the reactive grafting of suitably functionalized POSS / POS entities with polymeric systems amenable to such processes is described. The method teaches that the resulting POSS-grafted-polymers are particularly well suited for alloying agents by nongrafted POSS entitles such as molecular silicas. The successful alloying of POSS-polymers is aided because their interfacial tensions are reduced relative to non-POSS containing systems.

High heat resistant elastic composite laminates, sealants, adhesives, and coatings developed from a resin blend. The resin blend is made up of methyl and optionally phenyl silsequioxane resins selected to produce silanol-silanol condensation silicone polymers formed in a slowly evolving reaction mass containing submicron boron nitride, silica and boron oxide fillers. The required ratio of submicron boron nitride to silica has been discovered for assuring the formation of a high temperature resistant elastic composite blend that will form intermediate flexible ceramic products up to 600 deg C., then continue to form preceramic then dense ceramic products from 600 to 1000 deg C. The thermal yield of the composite is generally greater than 90 wt. % at 1000 deg C. Composite products with different levels of heat transformation can be fabricated within the same product depending upon the thickness of the layers of reinforcement.

An inertial separator comprising a tubular body, the tubular body comprises a composition comprising a polymer selected from the group consisting of a cyclic olefin polymer and a cyclic olefin copolymer, and, a polyhedral oligomeric silsesquioxane and / or a flame retardant and / or an anti-static additive, is disclosed.

The invention relates to a manufacturing method for coat material containing POSS acrylate copolymer. It takes free radical copolymerized to acr monomer and other acr monomer, and uses as modifier adding into the base compounding of UV coat, after taking UV solidification the coat material of high rigidity would be gained. The constituent includes 40-55% light-cured resin, 5-20% active modifier, 20-45% spike, 1-10% photoinitiator, 2-10% anti-foam additive. The rigidity of coat could reach to 6H, and the shrinkage ratio could reach 2%.

Processes have been developed for the manufacture of polyhedral oligomeric silsesquioxanes (POSS), polysilsesquioxanes, polyhedral oligomeric silicates (POS), and siloxane molecules bearing reactive ring-strained cyclic olefins (e.g. norbornenyl, cyclopentenyl, etc. functionalities). The preferred manufacturing processes employ the silation of siloxides (Si—OA, where A=H, alkaline or alkaline earth metals) with silane reagents that contain at least one reactive ring-strained cyclic olefin functionality [e.g., X3-ySi(CH3)y(CH2)2 where y=1-2 and X=OH, Cl, Br, I, alkoxide OR, acetate OOCR, peroxide OOR, amine NR2, isocyanate NCO, and R]. Alternatively, similar products can be prepared through hydrosilation reactions between silanes containing at least one silicon-hydrogen bond (Si—H) with ring-strained cyclic olefin reagents [e.g., 5-vinyl, 2 norbornene CH2═CH, cyclopentadiene]. The two processes can be effectively practiced using polymeric silsesquioxanes [RSiO1.5]∞ where ∞=1-1,000,000 or higher and which contain unreacted silanol or silane groups at chain terminus or branch points, on POSS nanostructures of formulas [(RSiO1.5)n]Σ#, homoleptic, [(RSiO1.5)m(R′SiO1.5)n]Σ#, heteroleptic, and {(RSiO1.5)m(RXSiO1.0)n}Σ#, functionalized heteroleptic nanostructures, on silanes RSiX3, linear, cyclic, oligomeric and polymeric siloxanes (polymeric formula RX2Si—(OSiRX)m—OSiRX2 where m=0-1000, X=OH, Cl, Br, I, alkoxide OR, acetate OOCR, peroxide OOR, amine NR2, isocyanate NCO, and R). Each of the processes result in new chemical species bearing one or more ring strained olefins that can undergo polymerization, grafting, or other desirable chemical reactions to form polymeric products. These polymeric systems are most desirably utilized in polymerizations for the modification of properties of thermoplastic or thermoset resin systems or for the preparation of polymers with utility in electronics, medical devices, sporting goods, and aerospace as coatings and structural components.

A silsesquioxane-based compound represented by Formula 1 and an organic light-emitting device including the same: wherein R1, R2, R3, R4, R5, R6, R7, and R8 are as defined in the specification. The use of the silsesquioxane-based compound enables to produce an organic light-emitting device with improvement in electrical characteristics such as brightness and efficiency. The silsesquioxane-based compound can exhibit good film smoothness and adhesion, and at the same time, good electrical characteristics such as current efficiency and brightness, and thus, is suitable for use in an organic light-emitting device.