3455 results about "Silsesquioxane" patented technology

Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

Radiation-curable silsesquioxane resin materials are employed for micro- and nanolithography. The resin materials can include a radiation-curable silsesquioxane resin and a photo-initiator having low viscosity. The low viscosity of the liquid system allows imprinting with low pressure and low temperature; e.g. room temperature. The resist's dry etching resistance is increased and the cured film is more easily separated from the mask. Due to its high modulus after cure, the material allows the fabrication of micro- and nano-features having high aspect ratios while providing a high throughput. Various pattern sizes, for example, ranging from tens of microns to as small as a few nanometers, may be achieved with the UV-curable material system.

Alkoxy-modified silsesquioxane compounds are described. The alkoxy-modified silsesquioxane compounds contain an alkoxysilane group that participates in an alkoxysilane-silica reaction as a silica dispersing agent in rubber, with the release of zero to about 0.1% by weight of the rubber of volatile organic compounds (VOC), especially alcohol, during compounding and further processing. Further described are methods for making alkoxy-modified silsesquioxanes, methods for making vulcanizable rubber compounds containing alkoxy-modified silsesquioxanes, vulcanizable rubber compounds containing alkoxy-modified silsesquioxanes, and pneumatic tires comprising a component that contains alkoxy-modified silsesquioxanes.

The present invention relates to a compound represented by Formula (1) and a polymer obtained using the compound:

wherein R¹ is phenyl which may have substituents, Q¹ is hydrogen, halogen, alkyl having 1 to 10 carbon atoms, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cyclohexenyl or phenyl in which optional hydrogen may be replaced by halogen or alkyl having 1 to 5 carbon atoms,

and Q² is a group represented by Formula (2) wherein the code < represents a bonding point with silicon, l, m, n and p are independently 0, 1, 2 or 3, A¹ to A⁴ are independently a single bond, 1,4-cyclohexylene, 1,4-cyclohexenylene, a condensed ring group having 6 to 10 carbon atoms which is a divalent group, or 1,4-phenylene, Z⁰ to Z³ are independently a single bond, —CH═CR—, —C≡C—, —COO—, —OCO—, or alkylene having 1 to 20 carbon atoms, and Z⁴ is a single bond, —CH═CH—, —C≡C—, —COO—, —OCO—, or alkylene having 1 to 20 carbon atoms. And Y¹ in Formula (1) is the group defined in Claim 1.

Thermoplastic polyurethanes having an alternating sequence of hard and soft segments in which a nanostructured polyhedral oligosilsesquioxane diol is used as a chain extender to form a crystalline hard segment constituting SMPs. The polyurethanes are formed by reacting a polyol, a chain extender dihydroxyl-terminated polyhedral oligosilsesquioxane and a diisocyanate. The polyurethanes have multiple applications including for example, implants for human health care, drug delivery matrices, superabsorbant hydrogels, coatings, adhesives, temperature and moisture sensors, etc.

A radiation curable ink composition comprising at least one initiator and at least one polyhedral oligomeric silsesquioxane (POSS) represented by the following empirical formula [R(SiO1.5)]n wherein n=4,6,8,10,12,14,16 and larger and each R is independently hydrogen, an inorganic group, an alkyl group, an alkylene group, an aryl group, an arylene group, or non-heterocyclic group-containing organo-functional derivatives of alkyl, alkylene, aryl or arylene groups; and a process for obtaining a colourless, monochrome or multicolour ink jet image comprising the steps of jetting one or more streams of ink droplets having the above-mentioned composition onto an ink-jet ink receiver material, and subjecting the obtained image to radiation curing.

An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.

The present invention is based on the discovery that maleimide-substituted polyhedralsilsesquioxane compounds are useful as components in photosensistive resin compositions. These compounds can be readily prepared from available precursors, and are easily incorporated into resin compositions by appropriate formulating conditions. The incorporation of a variety of polyhedralsilsesquioxane frameworks into a photosensitive resin composition is readily accomplished via the crosslinkable maleimide moiety, which crosslinks under a variety of conditions (e.g., chemically and radiatively). Indeed, the compounds described herein contain at least one maleimide moiety attached to a polyhedralsilsesquioxane framework.

A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

Interconnects in sub-micron and sub-half-micron integrated circuit devices are fabricated using a dual damascene process incorporating a low-k dielectric. A dual-damascene structure can be implemented without the necessity of building a single damascene base, and without CMP of the low-k dielectric. This structure simplifies the manufacturing process, reduces cost, and effectively reduces intra-level and inter-level capacitance, resistivity, and noise related to substrate coupling. In accordance with a further aspect of the present invention, a modified silicon oxide material such as silsesquioxane is used for the low-k dielectric in conjunction with silicon dioxide cap layers, allowing an improved process window and simplifying the etching process.

A coating composition and process for generating transparent, near-transparent, and semi-transparent super-hydrophobic coatings on surfaces having a contact angle of greater than 165 degrees. The composition comprises hydrophobic nanoparticles of silsesquioxanes containing adhesion promoter groups and low surface energy groups.

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO_1.5}_n, wherein n equals 8; and at least one chromophore moiety and transparent moiety. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO_1.5}_n, wherein n equals 8; and at least one chromophore moiety and transparent moiety.

A resist resin comprising a copolymer in which a (meth)acrylic structure having a side chain group decomposable with an acid and a polyorganosilsesquioxane structure represented by formula (1) are present in one molecule or a mixture of polymers in which these structures are each present in different molecules as well as a method of forming a pattern using the resist resin:wherein a reference character or numeral represents the same meaning as recited in the specification.The resist resin of the present invention has high sensitivity to a radiation having a short wavelength of 220 nm or less and is capable of forming a fine pattern of 0.15 mum or less.

The nanoscopic dimensions of polyhedral oligomeric silsesquioxanes (POSS) and polyhedral oligomeric silicates (POS) materials ranges from 0.7 nm to 5.0 nm and enables the thermomechanical and physical properties of polymeric materials to be improved by providing nanoscopic reinforcement of polymer chains at a length scale that is not possible by physically smaller aromatic chemical systems or larger fillers and fibers. A simple and cost effective method for incorporating POSS/POS nanoreinforcements onto polymers via the reactive grafting of suitably functionalized POSS/POS entities with polymeric systems amenable to such processes is described. The method teaches that the resulting POSS-grafted-polymers are particularly well suited for alloying agents by nongrafted POSS entitles such as molecular silicas. The successful alloying of POSS-polymers is aided because their interfacial tensions are reduced relative to non-POSS containing systems.

An inertial separator comprising a tubular body, the tubular body comprises a composition comprising a polymer selected from the group consisting of a cyclic olefin polymer and a cyclic olefin copolymer, and, a polyhedral oligomeric silsesquioxane and/or a flame retardant and/or an anti-static additive, is disclosed.

Processes have been developed for the manufacture of polyhedral oligomeric silsesquioxanes (POSS), polysilsesquioxanes, polyhedral oligomeric silicates (POS), and siloxane molecules bearing reactive ring-strained cyclic olefins (e.g. norbornenyl, cyclopentenyl, etc. functionalities). The preferred manufacturing processes employ the silation of siloxides (Si—OA, where A=H, alkaline or alkaline earth metals) with silane reagents that contain at least one reactive ring-strained cyclic olefin functionality [e.g., X_3-ySi(CH₃)_y(CH₂)₂ where y=1-2 and X=OH, Cl, Br, I, alkoxide OR, acetate OOCR, peroxide OOR, amine NR₂, isocyanate NCO, and R]. Alternatively, similar products can be prepared through hydrosilation reactions between silanes containing at least one silicon-hydrogen bond (Si—H) with ring-strained cyclic olefin reagents [e.g., 5-vinyl, 2 norbornene CH₂═CH, cyclopentadiene]. The two processes can be effectively practiced using polymeric silsesquioxanes [RSiO_1.5]_∞ where ∞=1-1,000,000 or higher and which contain unreacted silanol or silane groups at chain terminus or branch points, on POSS nanostructures of formulas [(RSiO_1.5)_n]_Σ#, homoleptic, [(RSiO_1.5)_m(R′SiO_1.5)_n]_Σ#, heteroleptic, and {(RSiO_1.5)_m(RXSiO_1.0)_n}_Σ#, functionalized heteroleptic nanostructures, on silanes RSiX₃, linear, cyclic, oligomeric and polymeric siloxanes (polymeric formula RX₂Si—(OSiRX)_m—OSiRX₂ where m=0-1000, X=OH, Cl, Br, I, alkoxide OR, acetate OOCR, peroxide OOR, amine NR₂, isocyanate NCO, and R). Each of the processes result in new chemical species bearing one or more ring strained olefins that can undergo polymerization, grafting, or other desirable chemical reactions to form polymeric products. These polymeric systems are most desirably utilized in polymerizations for the modification of properties of thermoplastic or thermoset resin systems or for the preparation of polymers with utility in electronics, medical devices, sporting goods, and aerospace as coatings and structural components.

A silsesquioxane-based compound represented by Formula 1 and an organic light-emitting device including the same:

• • wherein R₁, R₂, R₃, R₄, R₅, R₆, R₇, and R₈ are as defined in the specification. The use of the silsesquioxane-based compound enables to produce an organic light-emitting device with improvement in electrical characteristics such as brightness and efficiency. The silsesquioxane-based compound can exhibit good film smoothness and adhesion, and at the same time, good electrical characteristics such as current efficiency and brightness, and thus, is suitable for use in an organic light-emitting device.

Amphiphilic telechelics incorporating polyhedraloligosilsesquioxane (POSS) synthesized by direct urethane linkage between the diol end groups of polyethylene glycol (PEG) homopolymers and the monoisocyanate group of POSS macromers. The hydrophobicity of the amphiphilic telechelics can be varied by using PEG homopolymers of increasing MW, providing for control over molecular architecture by hydrophilic/hydrophobic balance. Methods for synthesizing the amphiphilic telechelics and their use as surfactants, thickening agents, additives to plastic such as PMMA′(Plexiglass), epoxyadhesives for improving their properties are also disclosed.

A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.