350 results about "Nanoimprint lithography" patented technology

Radiation-curable silsesquioxane resin materials are employed for micro- and nanolithography. The resin materials can include a radiation-curable silsesquioxane resin and a photo-initiator having low viscosity. The low viscosity of the liquid system allows imprinting with low pressure and low temperature; e.g. room temperature. The resist's dry etching resistance is increased and the cured film is more easily separated from the mask. Due to its high modulus after cure, the material allows the fabrication of micro- and nano-features having high aspect ratios while providing a high throughput. Various pattern sizes, for example, ranging from tens of microns to as small as a few nanometers, may be achieved with the UV-curable material system.

A UV nanoimprint lithography process for forming nanostructures on a substrate. The process includes depositing a resist on a substrate; contacting a stamp having formed thereon nanostructures at areas corresponding to where nanostructures on the substrate are to be formed to an upper surface of the resist, and applying a predetermined pressure to the stamp in a direction toward the substrate, the contacting and applying being performed at room temperature and at low pressure; irradiating ultraviolet rays onto the resist; separating the stamp from the resist; and etching an upper surface of the substrate on which the resist is deposited. The stamp is an elementwise embossed stamp that comprises at least two element stamps, and grooves formed between adjacent element stamps and having a depth that is greater than a depth of the nanostructures formed on the element stamps.

A UV nanoimprint lithography process and its apparatus that are able to repeatedly fabricates nanostructures on a substrate (wafer, UV-transparent plate) by using a stamp that is as large as or smaller than the substrate in size are provided. The apparatus includes a substrate chuck for mounting the substrate; a stamp made of UV-transparent materials and having more than two element stamps, wherein nanostructures are formed on the surface of each element stamp; a stamp chuck for mounting the stamp; a UV lamp unit for providing UV light to cure resist applied between the element stamps and the substrate; a moving unit for moving the substrate chuck or the stamp chuck to press the resist with the element stamps and substrate; and a pressure supply unit for applying pressurized gas to some selected regions of the substrate to help complete some incompletely filled element stamps.

There are provided a thin wire grid polarizer having a high transmittance, a high quenching ratio and a high degree of polarization, and a method for producing the same at low costs. A fluoridated polyimide thin film 12, a hydrophilic thin film 13 and a hydrophobic thin film 14 are sequentially stacked on a glass substrate 11 to be pressed by a die 1 from the side of the hydrophobic thin film 14 to transfer the fine pattern of groove forming protrusions 3 of the die 1 to the hydrophobic thin film 14 and hydrophilic thin film 13 by the nano-imprinted lithography technique, and then, metal fine wires are caused to grow by plating.

The present invention is directed to providing a photo nanoimprint lithography which can form a more uniform base layer. A photo nanoimprint lithography according to the present invention includes the steps of discretely applying a photo-curable resist drop-wise onto a substrate, filling an asperity pattern of a mold with the photo-curable resist by bringing the mold having the asperity pattern formed therein into contact with the photo-curable resist, curing the photo-curable resist by irradiating the resist with a light and releasing from the mold the photo-curable resist which has been photo-cured, wherein an intermediary layer is formed on a surface of the substrate for maintaining a discrete placement of the photo-curable resist that has been instilled drop-wise on the substrate until the mold is brought into contact with the photo-curable resist that has been instilled drop-wise on the substrate.

The invention relates to a substrate (1) comprising at least a first (2) and a second (8) coating layer on one surface of the substrate, for nanoimprint lithography, said first coating layer (2) consisting of a positive resist and said second (8) coating layer consisting of a negative resist. The invention also relates to a process in connection with nanoimprint lithography on the substrate (1), a pattern (3) of nanometre size being impressed in a first stage into the second coating layer (8) by means of a template (610), following which the first coating layer (2), in a second stage, is exposed to a chiefly isotropic developing method on surfaces thereof that have been exposed in connection with said first stage, a method for developing and material for said first and second coating layers being selected so that the first coating layer (2) is developed more quickly than the second coating layer (8), so that an undercut profile is obtained in the coating layers.

A nanoimprint lithography method of fabricating a nanoadhesive includes steps of (a) preparing a substrate and a transfer stamp, said transfer stamp having a transfer face and nanometer-scale features formed on said transfer face, said nanometer-scale features having a plurality of convexities and concavities, said substrate having an etched layer; (b) proceeding a staining process to enable either of said convexities and concavities to be stained with a photoresist; (c) proceeding a transfer process to enable said nanometer-scale features to touch said etched layer to transfer said photoresist onto said etched layer; and (d) proceeding an etching process to enable parts of said etched layer that are not stained with the photoresist to be each etched for a predetermined depth. As the steps indicated above, the nanoadhesive can be produced with mass production and low cost.

A parallelism adjustment device applicable to nano-imprint lithography has an imprint unit, a carrier unit, a parallelism adjustment mechanism, and a driving source. The imprint unit has a first molding plate and an imprinting mold mounted on the first molding plate. The carrier unit has a second molding plate and a substrate mounted on the second molding plate. The parallelism adjustment mechanism has an enclosed resilient film and a fluid filled therein, and is coupled to at least one of the first and second molding plates. The driving source drives at least one of the imprint unit and the carrier unit to form contact between the mold and the moldable layer. The parallelism adjustment device is pressed via the contact to adjust parallelism for the imprint mold and the substrate and uniformly distributes the pressure between the mold and the substrate, making the molding quality of nano-imprint lithography significantly improved.

The invention provides a modification of a polymer film surface interaction properties. In this process a polymer carrier object is covered by a chemical composition, comprising photo-polymerizable compounds, photo-initiators or catalysts with the ability to initiate polymerization and semi-fluorinated molecules. The so-produced polymer mold contains semi-fluorinated moieties, which are predominantly located on the surface and on the surface near region of the patterned surface. The polymer mold is suitable as a template with modified properties in a nano-imprint lithography process.

A method of forming a wire grid polarizing pattern across the relatively large surface area of a display substrate is disclosed where the method includes using a nano imprint lithograph process.

According to the disclosure, in forming the wire grid polarizing patterns using nano imprint lithography process, wire grid polarizing patterns are formed by bonding a stamp having a stamping area substantially smaller than that of the substrate with successive reticle areas of the substrate, where the substrate has a photosensitive film deposited thereon and where the stamping is such that recesses having a predetermined depth are formed in the photosensitive film, and then filling the recesses with an insulating film and etching it using the insulating film as a mask.

Accordingly, since a mechanical misalignment margin is acceptable from one reticle area to the next when patterning across the entire operational surface of the photosensitive film, a wire grid polarizing pattern with a uniform line width and spacings in each reticle area can be formed on a substrate having a large area for use with a liquid crystal panel.

The invention discloses a flexible micro-positioning stage with two degrees of freedom, the design of the flexible micro-positioning stage with two degrees of freedom comprises a flexible mechanism and an integral structure, two piezoelectric ceramic drivers are adopted in the structure, the tail part of each driver is connected with a base through a bolt, and the top end of each driver is connected with a spherical joint through a thread, thereby realizing Hertz contact. The flexible mechanism of the positioning stage mainly comprises three parts of the base, flexible branched chains with entirely consistent structures and a supporting movable platform thereof. Two displacement sensors are used for measuring actual output of the movable platform and respectively fixed between the base and the movable platform through an L-shaped support and a Z-shaped support. The flexible micro-positioning stage is characterized by high resolution and fast dynamic response speed, and can be taken as an auxiliary positioning platform of a nano-imprint lithography positioning system for realizing micro-feeding and precise positioning.

A LCD device having a thin phase retardation film is disclosed, which is achieved using a thin film polarizing film formed by accurately processing a thin aluminum film, a polarizing film of a nano imprint lithography method that uses polymer, and a polarizing film and a liquid crystal material that form a polarizing nano material thin film by uniformly coating a polarizing nano material (TCF).

A uniform pressing apparatus used in nanoimprint lithographic process is proposed, including a housing having a first flange; a first carrier unit for carrying an imprint mold and having at least one second flange freely attaches to the first flange; a second carrier unit for carrying a substrate; at least one uniform pressing unit mounted on a imprint force transmission path; and a power source driving at least one of the housing and the second carrier unit to allow a contact to be formed between the mold and the moldable layer. Therefore, the nanoimprint lithographic process is achieved with good parallelism between the substrate and the mold and with uniform pressure distribution.

A nanoimprint resist includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), and a diluent solvent. A method of a nanoimprint lithography is also provided.

A method of forming a resist pattern of high aspect ratio excelling in etching resistance by the use of nanoimprint lithography. The method of forming a resist pattern by nanoimprint lithography comprises the steps of disposing organic layer (4) on support (1); providing resist layer (2) on the organic layer (4) with the use of chemical amplification type negative resist composition containing silsesquioxane resin (A); pressing light transmission allowing mold (3) with partial light shielding portion (5) against the resist layer (2) and thereafter carrying out exposure from the upside of the mold (3); and detaching the mold (3).

The invention discloses a preparation method of a large-area surface enhancement raman scattering substrate. The preparation method comprises the following steps: at first, the surface of a hard solid material is irradiated by femtosecond laser to prepare a large-scale hard microstructural mother set; then, polydimethylsiloxane (PDMS) is poured on the hard microstructural mother set by the nanoimprint lithography technology, and the structure on the hard microstructural mother set is copied to prepare a PDMS framework; and finally, a gold film is plated on the PDMS framework to prepare the PDMS surface enhancement raman scattering substrate. The experiment results show that the preparation method has the advantages that the enhancement factors are high, enhancement factors in different positions of the substrate have good uniformity, the large-area surface enhancement raman scattering substrate can be prepared, the mother set can be repeatedly imprinted, the production cost is reduced, and in addition, god is taken as raman enhancement metal, so that the defect that silver is oxidized very easily is avoided.

The invention discloses a two-degree of freedom precise positioning work table, which comprises a base, a moving platform, a rigid support which is connected with the bottom of the base, and four flexible branched chains which are connected between the moving platform and the base, wherein each flexible branched chain comprises a moving block and three groups of flexible plate spring structures; each flexible plate spring structure consists of two '-'-shaped flexible plate springs; a first group and a second group of the flexible plate spring structures are respectively positioned at the left side and the right side of the moving block; the lower ends of the two '-'-shaped flexible plate springs of a third group of the flexible plate spring structures are connected with the side wall of the upper end of the moving block, and the upper ends thereof are connected with the side wall of the moving platform; four piezoelectric ceramics driving devices are respectively horizontally arranged; a ball-shaped joint of each driving device is supported on the side wall of the lower end of the moving block; and conducting strips of two position sensors are respectively connected with the upper plane of the rigid support and the lower plane of the moving platform. The positioning work table can be taken as an auxiliary positioning platform of a nanometer embossing photoetching positioning system to realize the microscale feeding and the precise positioning.