The invention discloses an air
pressure control method for
microwave plasma chemical vapor deposition diamond, and particularly relates to the technical field of
microwave plasma chemical vapor deposition, and the method comprises the steps of S1, spectrum real-time monitoring, S2,
machine learning prediction, S3, multi-stage air pressure regulation and control, S4, multi-parameter cooperative control, and S5, air pressure closed-
loop control. According to the method, high-precision prediction of the optimal air pressure value is achieved through combination of spectrum real-time monitoring and a
machine learning model, the
diamond deposition quality is effectively improved by means of a multi-stage air pressure regulation and control and multi-parameter cooperative control strategy, the
surface flatness and
crystallinity are remarkably improved, meanwhile, precise air pressure closed-
loop control and efficient gas flow are coordinated, and the precision of the
diamond deposition is improved. In addition, all the modules of the
system are in close fit, the stability of the deposition environment is guaranteed, the process fluctuation is reduced, the stability and reliability of the whole
deposition process are enhanced, and powerful guarantee is provided for high-quality and high-efficiency production of diamonds.