240 results about "Active structure" patented technology

NERS-active structures for use in Raman spectroscopy include protrusions extending from a surface of a substrate. A Raman signal-enhancing material is disposed on at least one surface of a first protrusion and at least one surface of a second protrusion. The Raman signal-enhancing material disposed on the first protrusion projects laterally in a direction generally towards the second protrusion, and the Raman signal-enhancing material disposed on the second protrusion projects laterally in a direction generally towards the first protrusion. At least a portion of the Raman signal-enhancing projecting from the first protrusion and at least a portion of the Raman signal-enhancing material projecting from the second protrusion may be separated by a distance of less than about 10 nanometers. Raman spectroscopy systems include such NERS-active structures, and methods for performing Raman spectroscopy include irradiating an analyte proximate such a NERS-active structure and detecting Raman-scattered radiation scattered by the analyte.

The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.

Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) Group III—Nitride nanostructures and uniform Group III—Nitride nanostructure arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanostructure can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed Group III—Nitride nanostructures and/or nanostructure arrays providing a uniform length of about 0.01-20 micrometers (μm) with constant cross-sectional features including an exemplary diameter of about 10 nanometers (nm)-500 micrometers (μm). Furthermore, core-shell nanostructure/MQW active structures can be formed by a core-shell growth on the non-polar sidewalls of each nanostructure and can be configured in nanoscale photoelectronic devices such as nanostructure LEDs and/or nanostructure lasers to provide tremendously-high efficiencies. Additional growth mode transitions from the pulsed to the non-pulsed growth mode and subsequent transitions from non-pulsed to pulsed growth mode are employed in order to incorporate certain group III—Nitride compounds more efficiently into the nanostructures and form devices of the designed shape, morphology and stochiometric composition. In addition, high-quality group III—Nitride substrate structures can be formed by coalescing the plurality of group III—Nitride nanostructures and/or nanostructure arrays to facilitate the fabrication of visible LEDs and lasers.

A medical device for drug delivery is provided which includes a stent structure and a biologically active structure attached to the stent structure. The biologically active structure is comprised of a plurality of layers, including a first layer having a first biologically active compound, such as an anti-proliferative, cytostatic or cytotoxic drug, for delivery at a first target site, such as the vascular tissue; a second layer having a second biologically active compound, such as a growth factor, for delivery into the arterial lumen and capable of promoting engraftment and differentiation of hematopoietic stem cells and/or endothelial progenitor cells at a second site of myocardial injury; and a third, middle layer which is substantially or selectively impermeable to both the first and second biologically active compounds.

Packaged NERS-active structures are disclosed that include a NERS substrate having a NERS-active structure thereon, and a packaging substrate over the NERS substrate having an opening therethrough, the opening in alignment with the NERS-active structure. A membrane may cover the opening in the packaging substrate. In order to perform nanoenhanced Raman spectroscopy, the membrane may be removed, and an analyte placed on the NERS substrate adjacent the NERS-active structure. The membrane may be replaced with another membrane after the analyte has been placed on the substrate. The membrane may maintain the pristine state of the substrate before it is deployed, and the replacement membrane may preserve the substrate and analyte for archival purposes. Also disclosed are methods for performing NERS with packaged NERS-active structures.

Integrated radiation source/amplifying structures for use in surface enhanced Raman spectroscopy (SERS) and hyper-SERS are disclosed. The structures include a radiation source integrated with a SERS-active structure that is provided within a resonant cavity. SERS and hyper-SERS systems employing the integrated radiation source/amplifying structures are disclosed. Methods of performing SERS and hyper-SERS are also disclosed.

Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

The present invention relates generally to electrical devices. The present invention relates more particularly to electrical devices including dendritic metal electrodes. One aspect of the present invention is an electrical device comprising a first electrode comprising at least one dendritic metal structure; a second electrode; and an electrically active structure disposed between the dendritic metal structure and the second electrode.

A micro-electromechanical fluid ejection device includes a substrate that incorporates drive circuitry. A fluid inlet channel is defined through the substrate. A static nozzle chamber structure is positioned on the substrate to extend from the substrate and defines a static wall that bounds the fluid inlet channel to form part of a nozzle chamber. An active nozzle chamber structure has a roof wall that defines a fluid ejection port and an active wall that depends from the roof wall about the static wall to define a remaining part of the nozzle chamber. The active structure is displaceable with respect to the static structure towards and away from the substrate respectively to reduce and increase a volume of the nozzle chamber so that fluid in the nozzle chamber is ejected from the fluid ejection port. A fluid displacement member is positioned on the static wall to define a fluid displacement area that faces the roof wall to facilitate ejection of fluid from the fluid ejection port. At least two actuators are connected to the drive circuitry and are operatively arranged with respect to the active structure to displace the active structure towards and away from the substrate on receipt of an actuating electrical signal from the drive circuitry. A coupling structure is interposed between each actuator and the active structure. The coupling structures are configured and connected to the active structure to impart substantially rectilinear movement to the active structure on operation of the actuators.

An ultrasensitive room temperature magnetoelectric thin film magnetometer is fabricated on a cantilever beam and includes an active magnetoelectric multilayer structure having a plurality of thin films formed at a region defined on the cantilever beam. Upon application of a magnetic field, the active magnetoelectric structure generates a corresponding response of an electrical nature which is a measure of a value of the applied magnetic field. The material of the cantilever beam may be removed beneath the active magnetoelectric multilayer structure to form a freestanding modification of the magnetometer with superior sensitivity. The active magnetoelectric multilayer structure is either a bi-layer structure which includes a piezoactive (piezoelectric and/or piezoresistive) thin film deposited in contact with a magnetostrictive thin film or a tri-layer active structure (in the free-standing implementation) including a piezoactive thin film sandwiched between a pair of magnetostrictive thin films.

A surface-enhanced Raman spectroscopy (SERS)—active structure for use in Raman scattering detection has an array of nanostructures formed on a substrate by deposition and chemical etching. The nanostructures are coated with metal nanoparticles.

A SERS-active structure is disclosed that includes a substrate and at least one nanowire disposed on the substrate. The at least one nanowire includes a core including a first material and a coating including a SERS-active material. A SERS system is also disclosed that includes a SERS-active structure. Also disclosed are methods for forming a SERS-active structure and methods for performing SERS with SERS-active structures.

An NERS-active structure is disclosed that includes a substrate and at least one elongated component disposed on the substrate. The at least one elongated component may include two conducting strips including an NERS-active material and an insulating strip positioned between the two conducting strips. Alternatively, the at least one elongated component may include a homogeneous component. An NERS system is also disclosed that includes an NERS-active structure. Also disclosed are methods for forming an NERS-active structure and methods for performing NERS with NERS-active structures.

The invention discloses a robot manipulator arm with self-adaptability, which comprises a passive adjustment structure and an active structure, wherein the active structure comprises a plurality of active arms; each of the active arms comprises a driving bracket; the driving brackets are fixedly arranged under an arc-shaped deflection frame by active and passive connecting shafts which are uniformly distributed on the arc-shaped deflection frame; each active arm comprises an active joint I which is formed by rotatable connection of an active frame and a joint connecting seat; the joint connecting seats and connecting rods I are rotatably connected to form active joints II; and the connecting rods I and connecting rod revolving seats are rotatably connected to form active joints III. The manipulator arm can effectively realize the fast and flexible adjustment of the initial position and posture of the active structure of a robot, reduce the structure size of the active arms, and reduce the movement inertia.

SERS-active structures including features having nanoscale dimensions are disclosed, including methods for forming such SERS-active structures and methods for forming a plurality of such SERS-active structures. Methods for performing SERS using SERS-active structures also are disclosed.