242 results about "Active structure" patented technology

A high electron mobility transistor (HEMT) (10) is disclosed that includes a semi-insulating silicon carbide substrate (11), an aluminum nitride buffer layer (12) on the substrate, an insulating gallium nitride layer (13) on the buffer layer, an active structure of aluminum gallium nitride (14) on the gallium nitride layer, a passivation layer (23) on the aluminum gallium nitride active structure, and respective source, drain and gate contacts (21, 22, 23) to the aluminum gallium nitride active structure.

NERS-active structures for use in Raman spectroscopy include protrusions extending from a surface of a substrate. A Raman signal-enhancing material is disposed on at least one surface of a first protrusion and at least one surface of a second protrusion. The Raman signal-enhancing material disposed on the first protrusion projects laterally in a direction generally towards the second protrusion, and the Raman signal-enhancing material disposed on the second protrusion projects laterally in a direction generally towards the first protrusion. At least a portion of the Raman signal-enhancing projecting from the first protrusion and at least a portion of the Raman signal-enhancing material projecting from the second protrusion may be separated by a distance of less than about 10 nanometers. Raman spectroscopy systems include such NERS-active structures, and methods for performing Raman spectroscopy include irradiating an analyte proximate such a NERS-active structure and detecting Raman-scattered radiation scattered by the analyte.

The present invention relates to Multicomponent Nucleic Acid Enzymes (MNAzymes) and methods for their use. MNAzymes comprise two or more oligonucleotide components which self-assemble in the presence of one or more MNAzyme assembly facilitator molecules to form a catalytically active structure. Compositions for making MNAzymes, and collections of MNAzymes are provided. Also provided are methods for using MNAzymes for the detection, identification and / or quantification of one or more targets. The methods can be practiced in solution-based assays or in assays where one or more reaction components are attached to a support structure. The methods allow for multiplexing the MNAzyme detection to detect multiple targets in a single reaction. Also provided are kits for making the compositions, and for practicing the methods provided herein.

Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and / or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and / or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire / MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and / or semiconductor layers with smooth and / or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and / or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.

Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) Group III—Nitride nanostructures and uniform Group III—Nitride nanostructure arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanostructure can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed Group III—Nitride nanostructures and / or nanostructure arrays providing a uniform length of about 0.01-20 micrometers (μm) with constant cross-sectional features including an exemplary diameter of about 10 nanometers (nm)-500 micrometers (μm). Furthermore, core-shell nanostructure / MQW active structures can be formed by a core-shell growth on the non-polar sidewalls of each nanostructure and can be configured in nanoscale photoelectronic devices such as nanostructure LEDs and / or nanostructure lasers to provide tremendously-high efficiencies. Additional growth mode transitions from the pulsed to the non-pulsed growth mode and subsequent transitions from non-pulsed to pulsed growth mode are employed in order to incorporate certain group III—Nitride compounds more efficiently into the nanostructures and form devices of the designed shape, morphology and stochiometric composition. In addition, high-quality group III—Nitride substrate structures can be formed by coalescing the plurality of group III—Nitride nanostructures and / or nanostructure arrays to facilitate the fabrication of visible LEDs and lasers.

The present invention relates to one kind of nanometer level low carbon alkane dehydrogenating catalyst, and features that the C3-C5 low carbon alkane dehydrogenating catalyst comprises carrier of single wall or multiple wall carbon nanotube and two active components selected from chromic oxide in 2-30 wt%, alumina in 2-25 weight and nickel oxide in 2-30 wt%. The catalyst has high catalysis activity, increased active structures, long service life, low catalytic dehydrogenation reaction temperature, high conversion rate, high selectivity and other advantages.

Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and / or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and / or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire / MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

A medical device for drug delivery is provided which includes a stent structure and a biologically active structure attached to the stent structure. The biologically active structure is comprised of a plurality of layers, including a first layer having a first biologically active compound, such as an anti-proliferative, cytostatic or cytotoxic drug, for delivery at a first target site, such as the vascular tissue; a second layer having a second biologically active compound, such as a growth factor, for delivery into the arterial lumen and capable of promoting engraftment and differentiation of hematopoietic stem cells and / or endothelial progenitor cells at a second site of myocardial injury; and a third, middle layer which is substantially or selectively impermeable to both the first and second biologically active compounds.

Packaged NERS-active structures are disclosed that include a NERS substrate having a NERS-active structure thereon, and a packaging substrate over the NERS substrate having an opening therethrough, the opening in alignment with the NERS-active structure. A membrane may cover the opening in the packaging substrate. In order to perform nanoenhanced Raman spectroscopy, the membrane may be removed, and an analyte placed on the NERS substrate adjacent the NERS-active structure. The membrane may be replaced with another membrane after the analyte has been placed on the substrate. The membrane may maintain the pristine state of the substrate before it is deployed, and the replacement membrane may preserve the substrate and analyte for archival purposes. Also disclosed are methods for performing NERS with packaged NERS-active structures.

Integrated radiation source / amplifying structures for use in surface enhanced Raman spectroscopy (SERS) and hyper-SERS are disclosed. The structures include a radiation source integrated with a SERS-active structure that is provided within a resonant cavity. SERS and hyper-SERS systems employing the integrated radiation source / amplifying structures are disclosed. Methods of performing SERS and hyper-SERS are also disclosed.

Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and / or p-type sides of the heterostructure.

A SERS-active structure is disclosed that includes a substrate and at least one nanowire disposed on the substrate. The at least one nanowire includes a core including a first material and a coating including a SERS-active material. A SERS system is also disclosed that includes a SERS-active structure. Also disclosed are methods for forming a SERS-active structure and methods for performing SERS with SERS-active structures.

The present invention relates generally to electrical devices. The present invention relates more particularly to electrical devices including dendritic metal electrodes. One aspect of the present invention is an electrical device comprising a first electrode comprising at least one dendritic metal structure; a second electrode; and an electrically active structure disposed between the dendritic metal structure and the second electrode.

An apparatus comprises a first layer within a semiconductor chip having active structures electrically connected to other active structures and having electrically isolated first inactive structures. A second layer within the semiconductor chip is physically connected to the first layer. The second layer comprises an insulator and has second inactive structures. The first inactive structures are physically aligned with the second inactive structures.

A micro-electromechanical fluid ejection device includes a substrate that incorporates drive circuitry. A fluid inlet channel is defined through the substrate. A static nozzle chamber structure is positioned on the substrate to extend from the substrate and defines a static wall that bounds the fluid inlet channel to form part of a nozzle chamber. An active nozzle chamber structure has a roof wall that defines a fluid ejection port and an active wall that depends from the roof wall about the static wall to define a remaining part of the nozzle chamber. The active structure is displaceable with respect to the static structure towards and away from the substrate respectively to reduce and increase a volume of the nozzle chamber so that fluid in the nozzle chamber is ejected from the fluid ejection port. A fluid displacement member is positioned on the static wall to define a fluid displacement area that faces the roof wall to facilitate ejection of fluid from the fluid ejection port. At least two actuators are connected to the drive circuitry and are operatively arranged with respect to the active structure to displace the active structure towards and away from the substrate on receipt of an actuating electrical signal from the drive circuitry. A coupling structure is interposed between each actuator and the active structure. The coupling structures are configured and connected to the active structure to impart substantially rectilinear movement to the active structure on operation of the actuators.

Fuel cell devices and fuel cell systems, methods of using same, and methods of making same are provided. In certain embodiments, the fuel cell devices may include one or more active layers containing active cells that are connected electrically in parallel and / or series. In certain embodiments, the fuel cell devices include an elongate ceramic support structure the length of which is the greatest dimension such that the coefficient of thermal expansion has only one dominant axis coextensive with the length. In certain embodiments, a reaction zone is positioned along a first portion of the length for heating to a reaction temperature, and at least one cold zone is positioned along a second portion of the length for operating below the reaction temperature. There are one or more gas passages, each having an associated anode or cathode. In some embodiments, ceramic end tubes are permanently attached to the ceramic support structure to supply gases to the passages. In certain embodiments, a multilayer active structure is attached upon a flat tube having a plurality of channels therein for feeding gases into the passages of the multilayer active structure. In other embodiments, multilayer active structures are provided in which the electrodes contain pluralities of microtubular or nanotubular passages for feeding gases thereto. In yet other embodiments, the multilayer active structure is contained within a ceramic support structure that includes two elongate members that extend outwardly from one edge for feeding gases into the multilayer active structure.

A NERS-active structure is disclosed that includes at least one heterostructure nanowire. The at least one heterostructure nanowire may include alternating segments of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire may include a core with alternating coatings of an NERS-inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure. Also disclosed are methods for forming a NERS-active structure and methods for performing NERS with NERS-active structures.

The present application relates to a multiple component which is to be subsequently individualized by forming components containing active structures, in addition to a corresponding component which can be used in microsystem technology systems. The multiple component and / or component comprises a flat substrate and also a flat cap structure which are bound to each other such that they surround at least one first and one second cavity per component, which are sealed against each other and towards the outside. The first of the two cavities is provided with getter material and due to the getter material has a different internal pressure and / or a different gas composition than the second cavity. The present application also relates to a method for producing the type of component and / or components for which gas mixtures of various types of gas have a different absorption ratio in relation to the getter material.

An ultrasensitive room temperature magnetoelectric thin film magnetometer is fabricated on a cantilever beam and includes an active magnetoelectric multilayer structure having a plurality of thin films formed at a region defined on the cantilever beam. Upon application of a magnetic field, the active magnetoelectric structure generates a corresponding response of an electrical nature which is a measure of a value of the applied magnetic field. The material of the cantilever beam may be removed beneath the active magnetoelectric multilayer structure to form a freestanding modification of the magnetometer with superior sensitivity. The active magnetoelectric multilayer structure is either a bi-layer structure which includes a piezoactive (piezoelectric and / or piezoresistive) thin film deposited in contact with a magnetostrictive thin film or a tri-layer active structure (in the free-standing implementation) including a piezoactive thin film sandwiched between a pair of magnetostrictive thin films.

Methods of forming NERS-active structures are disclosed that include ordered arrays of nanoparticles. Nanoparticles covered with an outer shell may be arranged in an ordered array on a substrate using Langmuir-Blodgett techniques. A portion of the outer shell may be removed, and the exposed nanoparticles may be used in a system to perform nanoenhanced Raman spectroscopy. An ordered array of nanoparticles may be used as a mask for forming islands of NERS-active material on a substrate. NERS-active structures and an NERS system that includes an NERS-active structure are also disclosed. Also disclosed are methods for performing NERS with NERS-active structures.

A NERS-active structure includes a deformable, active nanoparticle support structure for supporting a first nanoparticle and a second nanoparticle that is disposed proximate the first nanoparticle. The nanoparticles each comprise a NERS-active material. The deformable, active nanoparticle support structure is configured to vary the distance between the first nanoparticle and the second nanoparticle while performing NERS. Various active nanoparticle support structures are disclosed. A NERS system includes such a NERS-active structure, a radiation source for generating radiation scatterable by an analyte located proximate the NERS-active structure, and a radiation detector for detecting Raman scattered radiation scattered by the analyte. A method for performing NERS includes providing such a NERS-active structure, providing an analyte at a location proximate the NERS-active structure, irradiating the NERS-active structure and the analyte with radiation, varying the distance between the nanoparticles, and detecting Raman scattered radiation scattered by the analyte.

A SERS-active structure is disclosed that includes a substrate and at least two nanowires disposed on the substrate. Each of the at least two nanowires has a first end and a second end, the first end being attached to the substrate and the second end having a SERS-active tip. A SERS system is also disclosed that includes a SERS-active structure. Also disclosed are methods for forming a SERS-active structure and methods for performing SERS with SERS-active structures.

A surface-enhanced Raman spectroscopy (SERS)—active structure for use in Raman scattering detection has an array of nanostructures formed on a substrate by deposition and chemical etching. The nanostructures are coated with metal nanoparticles.

A SERS-active structure is disclosed that includes a substrate and at least one nanowire disposed on the substrate. The at least one nanowire includes a core including a first material and a coating including a SERS-active material. A SERS system is also disclosed that includes a SERS-active structure. Also disclosed are methods for forming a SERS-active structure and methods for performing SERS with SERS-active structures.

An NERS-active structure is disclosed that includes a substrate and at least one elongated component disposed on the substrate. The at least one elongated component may include two conducting strips including an NERS-active material and an insulating strip positioned between the two conducting strips. Alternatively, the at least one elongated component may include a homogeneous component. An NERS system is also disclosed that includes an NERS-active structure. Also disclosed are methods for forming an NERS-active structure and methods for performing NERS with NERS-active structures.