4results about How to "Improve operating characteristics" patented technology

This invention relates to a plastic conduit for conveying air conditioning refrigerant in electric vehicles or plug-in hybrid vehicles, the plastic conduit comprising two layers or only two layers: a first layer directly surrounding the internal space of the conduit, and a second layer directly adjacent to the first layer, wherein the first layer is based on an aliphatic polyamide molding compound A comprising PA 6, and the second layer is based on an aliphatic polyamide molding compound B comprising PA 610, PA 612, or mixtures thereof or copolyamides, wherein the sum of the thicknesses of the first and second layers is in the range of 1.5 mm to 5 mm, and the thickness ratio of the first to the second layer is in the range of 0.50 to 6.00.

This document provides an operating method for a semiconductor device, the semiconductor device including memory cells that store multiple bits of data. The method includes: receiving data to be programmed into a memory cell selected from the memory cells; and applying a programming pulse to the selected memory cell, the programming pulse being determined based on the logical state of the data and selected from the group consisting of a first programming pulse, a second programming pulse, a third programming pulse, and a fourth programming pulse, wherein the first programming pulse is positive, the second programming pulse is positive and has at least one of a peak level, a peak period, and a falling oscillation rate different from the first programming pulse, the third programming pulse is negative, and the fourth programming pulse is negative and has at least one of a peak level, a peak period, and a rising oscillation rate different from the third programming pulse.

A semiconductor device includes: a bit line on a substrate; a plate line on the substrate, the plate line being spaced apart from the bit line in a first direction substantially parallel to an upper surface of the substrate facing the bit line; a first channel between the bit line and the plate line; a first word line, wherein the first channel is between the first word line and the substrate and extends in a second direction substantially parallel to the upper surface of the substrate and intersecting the first direction; a second channel between the first channel and the substrate; a data storage pattern between the bit line and the plate line, the data storage pattern being at the same distance from the substrate as the second channel; and a second word line between the second channel and the substrate, the second word line extending in the second direction.

A semiconductor device includes a substrate; a bit line and a word line extending on the substrate in directions intersecting each other; a semiconductor pattern connected to the bit line and adjacent to the word line; and a plurality of data storage devices connected to the semiconductor pattern, wherein the data storage device includes a first electrode positioned in a direction perpendicular to the substrate; a plurality of second electrodes positioned in a direction parallel to the substrate; and a dielectric layer provided between the first electrode and the second electrode, a planar area of the first electrode in the direction parallel to the substrate increases as the first electrode moves away from the substrate, and a thickness of each of the second electrodes in the direction perpendicular to the substrate increases as the second electrode becomes closer to the substrate.