5results about How to "Improve operating characteristics" patented technology

This invention relates to a plastic conduit for conveying air conditioning refrigerant in electric vehicles or plug-in hybrid vehicles, the plastic conduit comprising two layers or only two layers: a first layer directly surrounding the internal space of the conduit, and a second layer directly adjacent to the first layer, wherein the first layer is based on an aliphatic polyamide molding compound A comprising PA 6, and the second layer is based on an aliphatic polyamide molding compound B comprising PA 610, PA 612, or mixtures thereof or copolyamides, wherein the sum of the thicknesses of the first and second layers is in the range of 1.5 mm to 5 mm, and the thickness ratio of the first to the second layer is in the range of 0.50 to 6.00.

The invention relates to nuclear energy, and in particular to elements of fuel assemblies (FAs) of VVER-type nuclear reactors. Summary of the invention: a spacer grid of a nuclear reactor fuel assembly, comprising a hexagonal rim with a field of hexagonal cells fixed therein, made of a single sheet, so that the folded cells have bends and cuts for the cells in one row of cells arranged on one end face of the spacer grid, and bends and cuts for the cells of the parallel row are placed on the other end face of the spacer grid, wherein the cuts for the cells are designed to form radius elements at the ends of the cell, bent in opposite directions and forming screw deflectors at the ends of the cell, whereon the diameter of the circle inscribed between the three points of the radius elements closest to the center of the cell is calculated by the formula: D=d⋅k, where D is the diameter of the circle inscribed between the three points of the radius elements closest to the center of the cell, mm; d is the diameter of the fuel element, mm; k is a coefficient taking into account the springing of the bent radius element to ensure tension in the "cell - fuel element" connection.

This document provides an operating method for a semiconductor device, the semiconductor device including memory cells that store multiple bits of data. The method includes: receiving data to be programmed into a memory cell selected from the memory cells; and applying a programming pulse to the selected memory cell, the programming pulse being determined based on the logical state of the data and selected from the group consisting of a first programming pulse, a second programming pulse, a third programming pulse, and a fourth programming pulse, wherein the first programming pulse is positive, the second programming pulse is positive and has at least one of a peak level, a peak period, and a falling oscillation rate different from the first programming pulse, the third programming pulse is negative, and the fourth programming pulse is negative and has at least one of a peak level, a peak period, and a rising oscillation rate different from the third programming pulse.

A semiconductor device includes: a bit line on a substrate; a plate line on the substrate, the plate line being spaced apart from the bit line in a first direction substantially parallel to an upper surface of the substrate facing the bit line; a first channel between the bit line and the plate line; a first word line, wherein the first channel is between the first word line and the substrate and extends in a second direction substantially parallel to the upper surface of the substrate and intersecting the first direction; a second channel between the first channel and the substrate; a data storage pattern between the bit line and the plate line, the data storage pattern being at the same distance from the substrate as the second channel; and a second word line between the second channel and the substrate, the second word line extending in the second direction.

A semiconductor device includes a substrate; a bit line and a word line extending on the substrate in directions intersecting each other; a semiconductor pattern connected to the bit line and adjacent to the word line; and a plurality of data storage devices connected to the semiconductor pattern, wherein the data storage device includes a first electrode positioned in a direction perpendicular to the substrate; a plurality of second electrodes positioned in a direction parallel to the substrate; and a dielectric layer provided between the first electrode and the second electrode, a planar area of the first electrode in the direction parallel to the substrate increases as the first electrode moves away from the substrate, and a thickness of each of the second electrodes in the direction perpendicular to the substrate increases as the second electrode becomes closer to the substrate.