74results about How to "Reduce processing defects" patented technology

An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH₃) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.

The continual casting directional solidification method for TiAl-base alloy plate comprises, putting TiAl alloy material bar 3 and dummy ingot 4 with rectangular intersection into the electromagnetic induction range of coil 6, galvanizing to coil 6 with single-phase alternating current with power of 75~100kW from electrical power for 20~25min; the alloy bar 3 and ingot 4 move downward with velocity of 0.01-0.05mm/min and get into the bottom crystallizer 8. This invention overcomes the limit to rectangular intersection blank and fits to press for high performance material in economy, science and national defense industry.

A p-type base layer is selectively formed on a surface of an n-type drift layer; an n-type source layer is selectively formed on a surface of the p-type base layer; and a p-type contact layer is formed to be in contact with the selectively-formed n-type source layer. A p-type counter layer is formed to be in contact with the n-type source layer, so as to overlap the p-type contact layer, so as to be separated from an interface where the p-type base layer and the gate oxide film are in contact with each other, and to be shallower than the p-type base layer. Accordingly, switching destruction caused by process defects in an insulated gate semiconductor device is reduced.

A water cooled electromagnetic directional solidifying method for Ti-based alloy features that the furnace containing crucible is vacuumized, and after the single-phase AC is applied to the coil for 4-16 min, the upper material rod and bottom material are moved downward to make the bottom material come in crystallier, resulting in uniform cooling speed and high mechanical performance of product.

The invention relates to martensite-granular bainite plastic die steel and a manufacturing method thereof, and belongs to the field of manufacturing of steel materials. The die steel consists of martensite and granular bainite, wherein the martensite accounts for 60 to 90 volume percent of the steel. The manufacturing method comprises the following steps of: performing hot processing, cooling to room temperature, heating a material to the temperature of between 800 and 920 DEG C again, preserving the heat, cooling to room temperature at a speed of 0.02 to 20 DEG C/second, and tempering at the temperature of between 100 and 600 DEG C to obtain the plastic die steel. The die steel has the advantages of high strength, elongation and impact toughness.

The invention discloses an electromagnetic braking translation-type rolling plate clamp comprising a hoisting device, a driving device, a braking device, a supporting cross beam, a left clamp arm, a right clamp arm, a clamp arm protection device and an electrical system, wherein the driving device comprises a three-in-one speed reducer, a torque limiter, a small spiral bevel gear, a big spiral bevel gear, a rack, a gear, an aligning roller bearing and a gear shaft; and the electromagnetic braking device comprises an electromagnet, a ratchet wheel and a pawl. When in brake, the other end of the pawl is supported on the root of the ratchet wheel; the middle of the pawl is hinged on the rear side wall of the supporting cross beam; a detection device comprises a position switch arranged on the cross beam and a centering switch and an edge detection switch which are arranged on the clamp arms. In the invention, the driving device has stable running; the electromagnetic braking is accurate and reliable; and a sliding plate is well protected and can be easily and accurately reset. The clamp has the advantages of compact structure, light dead weight, high safety factor, high strength, comprehensive protection measure and high working efficiency, can realize automatic and semi-automatic running and relieve the labor intensity of workers.

The invention discloses an ultrasonic inserting cutting tool for processing a curve outline of a honeycomb core. The ultrasonic inserting cutting tool comprises a threaded section, a rigidity improving block, a trapezoid-like shaped platform transition block and a thin-sheet shaped open type tool body, wherein axes of the threaded section, the rigidity improving block, the trapezoid-like shaped platform transition block and the thin-sheet shaped open type tool body are positioned on an axis of the ultrasonic inserting cutting tool for processing the curve outline of the honeycomb core. According to the ultrasonic inserting cutting tool for processing the curve outline of the honeycomb core, the curve outline of the honeycomb core material is inserted and cut under ultrasonic vibration effect; the honeycomb core material can be smoothly cut through a circular arc shaped cutting bottom edge under the ultrasonic effect, thus the damage of the honeycomb core material in processing can be decreased, and the processing rigidity of the rest materials can be improved; in addition, the friction between the circular arc shaped cutting bottom edge and the processing surface of the honeycomb core is reduced by the ultrasonic effect, so that the processing defects of the curve outline of the honeycomb core can be reduced; the abrasion of the tool is reduced, and as a result, the service life of the tool is prolonged; and the curve outline of the honeycomb core is processed with high quality.

The invention provides a processing-control device, which can set appropriate moving speed of a processing head in a short time and reduce unqualified workpieces during process. The processing-control device which controls the three-dimensional laser processing of workpieces through laser irradiation comprises a moving speed setting part (33), which sets the moving speed of a processing head corresponding to the angle of a processing position for each processing position based on the angle formed between the surface of a processing position on a workpiece and the direction of the processing tip of a processing head; and a control indicating part (35), outputs control indication for a workpiece based on the moving speed set to control the three-dimensional laser process.

An electrode connection structure includes a substrate layer, a plurality of pads on the substrate layer, and an insulation layer at least partially covering the substrate layer and the pads. The insulation layer includes a plurality of holes on the pads and at least one first groove line extending between the pads neighboring each other.

The invention discloses a wood burr thorough removing method. The wood burr thorough removing method comprises the following steps of 1) removing dust on the surfaces off wood; 2) brushing thin oil on wood surfaces or in holes or grooves by using a hairbrush to form a thin oil layer; 3) standing the wood for 15-20 minutes, wherein burrs on the wood surfaces or in the holes or grooves protrude outwards under the effect of the acting force of thin oil solidification, and a solidified thin oil layer is formed on the burns and the wood surfaces such that the burrs get far away from the wood surfaces, holes or grooves; 4) grinding the wood surfaces by using abrasive paper to remove the burrs from the roots of the wood surfaces. The wood burr thorough removing method has the advantages that since the thin oil is coated onto the wood to form the thin oil layer and the burrs of the wood are enabled to be outwards upright or warped to get far away from the surfaces of the wood during PU (polyurethane) resin solidification, then the burrs can be easily removed from the roots by using the abrasive paper and the effect of thoroughly removing the burrs is achieved.

A laser processing apparatus which achieves both shorter TAT and reduction in processing defects. In the apparatus, a laser radiation section, an undulation measurement section for measuring undulation of a substrate or a film thickness measuring section for measuring the thickness of a thin film formed on the substrate, and an optical inspection section for optically inspecting grooves formed by laser-processing the thin film on the substrate are fixed so that their positional relationship is kept constant.

Method and apparatus for rinsing and drying a semiconductor substrate having a first rinse liquid such as water on the substrate in a substrate processing system. The method includes dispensing onto the substrate liquid carbon dioxide to displace any liquid present on the substrate and to dry the substrate. The apparatus includes a chamber for rinsing and drying the substrate.

This laser processing device (100) is provided with: a processing head section (135) which laser processes an item which is being processed; a mount section (120) which has a plurality of separated moveable mount sections (121) which rise and fall in the vertical direction, and which holds the item being processed; a processing table (115) which drives the mount section in the X and Y directions; an upper surface adhesion device (130) which is arranged above the item being processed and which adheres to the upper surface of the item being processed; and a drive unit (150) which drives the upper surface adhesion device so as to rise and fall in the vertical direction.

The invention, which belongs to the field of the measurement machine of numerical control precision measurement equipment, especially relates to an articulated arm type measurement machine with an articulated arm structure. The measurement machine arranged symmetrically along a ZX plane comprises five steering knuckles capable of moving freely and independently and seven connecting arm segments. The five steering knuckles are in a dual-point support mode and support points of all knuckles except the knuckle 4 are arranged symmetrically along the ZX plane; and the knuckles 1 and 4 are infinite rotation knuckles. The measurement machine has comprehensive advantages of flexible operation, high structural rigidity, and light weight and the like.

In a method of removing a photoresist pattern from a substrate without deteriorating a lower electrode or increasing processing time, ozone gas may be provided onto a substrate on which a photoresist pattern may be formed. An oxidation-decomposition process may be carried out using the ozone gas, to thereby decompose the photoresist pattern on the substrate. The decomposed photoresist pattern may be dissolved into water and removed from the substrate in a rinsing process. Accordingly, a photoresist pattern in an opening having a relatively high aspect ratio may be sufficiently removed from a substrate without deteriorating the lower electrode or increasing processing time.

The invention discloses a preparation method of a high-quality large diameter extremely thin-walled seamless titanium tube. The preparation method comprises the steps that a titanium tube is subjectedto multi-pass spinning by a vertical ball spinning machine to obtain the seamless titanium tube. The external diameter of the seamless titanium tube is 100mm-300mm, the ratio of wall thickness and the external diameter is not more than 0.001, the dimensional tolerance of the external diameter is +/-0.02mm, the tolerance of the wall thickness is +/-0.01mm, the straightness accuracy is less than 0.5mm/m, and the internal and external surface roughness of the seamless titanium tube Ra is less than 0.2[mu]m. According to the preparation method of the high-quality large diameter extremely thin-walled seamless titanium tube, by controlling the deviation of the external diameter of a core rod of the vertical ball spinning machine and the internal diameter of a spinning tube blank, and accordingto the thickness of the spinning tube blank, a ball bite angle is designed reasonably, then multi-pass spinning is carried out by controlling the thinning ratio and feed rate in the spinning process,dimensional accuracy and surface quality of the seamless titanium tube are improved, the seamless titanium tube with good surface quality, high dimensional accuracy and good plasticity is obtained, and the preparation method is suitable for the production of the various extremely thin-walled seamless titanium tubes with the cold spinning deformability.

A substrate processing apparatus and a substrate processing method can appropriately control the charge of a substrate depending on the type of wet processing, thereby reducing defective processing due to static electricity on the surface of the substrate. The substrate processing apparatus includes: a static electricity adjustment section for adjusting static electricity on a substrate; and a wet processing apparatus for carrying out wet processing of the static electricity-adjusted substrate. The static electricity adjustment section removes static electricity from the substrate or charges the substrate into a desired charged state, for example.

A display apparatus is provided. The display apparatus includes a substrate having a display area and a pad area, an active layer in the display area of the substrate, a pad electrode in the pad area of the substrate, and a planarization layer on the active layer and the pad electrode with a contact hole for exposing a part of the active layer. A maximum diameter of the contact hole has a size considering an increase in maximum diameter of the contact hole while the planarization layer in the pad area is removed after the planarization layer is formed on the display area and the pad area. Accordingly, it is possible to minimize an increase in size of the contact hole in the display area while the planarization layer is removed, thereby reducing process defects, such as a gap error, of the display apparatus.

A vertical memory device includes a cell stacked structure, a wiring connection structure, and a first insulating interlayer. The cell stacked structure may include insulation layers and gate patterns repeatedly and alternately stacked on a first region of a substrate. The wiring connection structure may contact side walls of the cell stacked structure. The wiring connection structure may include a first staircase structure having one side of a stepped shape, a second staircase structure having one side of a stepped shape and disposed below the first staircase structure, and a first dummy staircase structure between the first and second staircase structures. The first and second staircase structures may be spaced apart from each other in the first direction, and both sides in the first direction of the first dummy staircase structure may have stepped shapes. The first insulating interlayer may be on the substrate to cover the wiring connection structure.